JP3898351B2 - Flexible contact board - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a contact board and the like, and more particularly to a flexible contact board and the like suitable as a contact board used for performing a burn-in test on a plurality of semiconductor devices formed on a wafer in a lump.
[0002]
[Prior art]
Inspection of many semiconductor devices formed on a wafer is roughly classified into product inspection (electrical characteristic test) using a probe card and burn-in test which is a reliability test performed thereafter.
The burn-in test is one of screening tests performed to remove a semiconductor device having an inherent defect or a device causing a failure depending on time and stress from manufacturing variations. While the probe card inspection is an electrical characteristic test of the manufactured device, the burn-in test is a thermal acceleration test.
[0003]
The burn-in test is a normal method (one-chip burn-in system) in which a wafer is cut into chips by dicing and packaged one by one after an electrical characteristic test performed for each chip by a probe card. Then, cost is not feasible. Therefore, development and practical use of a burn-in board (contact board) for performing a burn-in test on a plurality of semiconductor devices formed on a wafer all at once have been promoted (Japanese Patent Laid-Open No. 7-231019). Wafer and batch burn-in systems using burn-in boards are not only highly feasible in terms of cost, but also an important technology for enabling the latest technological flow such as bare chip shipment and bare chip mounting.
[0004]
FIG. 9 shows a specific example of the burn-in board.
As shown in FIG. 9, the burn-in board has a structure in which a membrane ring 60 with bumps is fixed on a multilayer wiring board 80 via an anisotropic conductive rubber sheet 70.
The bumped membrane ring 60 is responsible for the contact portion that is in direct contact with the device under test. In the membrane ring 60 with bumps, bumps 63 are formed on one surface of the membrane 62 stretched over the ring 61, and pads 64 are formed on the other surface. In the membrane ring 60 with bumps, the number of bumps is obtained by multiplying this number by the number of chips corresponding to pads (about 600 to 1000 pins) formed on the periphery or center line of each semiconductor chip on the wafer 50. 63 is formed on the membrane 62.
The multilayer wiring board 80 has wiring for applying a predetermined burn-in test signal to each bump 63 isolated on the membrane 62 via a pad 64 on a mullite ceramic substrate or the like. The multilayer wiring board 80 has a multilayer wiring structure because wiring is complicated.
The anisotropic conductive rubber sheet 70 is an elastic body having conductivity only in a direction perpendicular to the main surface, and electrically connects the terminals on the multilayer wiring board 80 and the pads 64 on the membrane 62. The anisotropic conductive rubber sheet 70 is brought into contact with the pad 64 on the membrane 62 by a convex portion formed on the surface thereof, thereby absorbing irregularities on the surface of the semiconductor wafer 50 and variations in the height of the bumps 63. The upper pad and the bump 63 on the membrane 62 are securely connected.
[0005]
[Problems to be solved by the invention]
The burn-in board described above has the following problems.
First, since the multilayer wiring board is warped, the contact pressure is difficult to be uniform over the entire surface. In addition, the multilayer wiring board is warped by the formation of the wiring layer, and the central portion on the wiring layer forming surface side of the multilayer wiring board is raised by the warp. In addition, the flexibility of the burn-in board as a whole is poor, and it is difficult to structurally cope with variations in bump and pad height.
Second, the structure is complicated and the manufacturing cost is high.
Third, an interlayer short circuit may occur in a multilayer wiring board, and its correction is difficult.
[0006]
The present invention has been made under the above-described background, and an object thereof is to provide a contact board having flexibility that can solve the above-described problems.
[0007]
[Means for Solving the Problems]
In order to achieve the above object, the present invention is configured as follows.
[0008]
(Configuration 1) A contact board used for performing a burn-in test of a large number of semiconductor devices formed on a wafer in a lump, wherein each semiconductor device is attached to one surface of a membrane stretched over a first ring. A structure having a first bump to be contacted, a first pad on the other surface of the membrane, and connecting the first bump and the first pad via a bump hole formed through the membrane. A first membrane ring having a second bump for contacting the first pad on one surface of the membrane stretched over a second ring having an inner diameter larger than the outer diameter of the first ring, and the other of the membrane Having a second pad on the surface, and connecting the second bump and the second pad through a bump hole formed through the membrane. And a third bump for contacting the second pad on one surface of the membrane stretched over a third ring having an inner diameter larger than the outer diameter of the second ring, A third membrane ring having a third pad on the other surface and having a structure in which the third bump and the third pad are connected via a bump hole formed through the membrane. Characteristic flexible contact board [0009]
(Configuration 2) An air hole is formed in a membrane in the first membrane ring and the second membrane ring, or an air hole is formed in a membrane in all the first to third membrane rings . A flexible contact board according to Configuration 1.
[0010]
(Configuration 3) The second membrane ring corresponding to the membrane ring of the inner layer is a plurality of membrane rings having different ring diameters, and a plurality of membrane rings having the same relationship as between the membrane rings described in Configuration 1 The flexible contact board according to Configuration 1 or 2, wherein:
[0011]
(Structure 4) The flexible contact board according to any one of Structures 1 to 3, wherein the pad is made of Cu, the bump is made of Ni or a Ni alloy, and the membrane is made of polyimide.
[0012]
(Structure 5) The flexible contact board according to any one of Structures 1 to 4, wherein a film containing a metal that is not oxidized is formed on a surface of the pad and / or the bump.
[0013]
(Structure 6) The flexible contact board according to Structure 5, wherein the film containing a metal that is not oxidized is made of any one of gold, Au—Co alloy, rhodium, palladium, and an alloy containing these.
[0014]
[Action]
According to the structure 1, there exists the following effect | action.
First, a membrane ring for wiring is used in place of the conventional multilayer wiring board, that is, the entire burn-in board is composed of a plurality of membrane rings, so that the flexibility and cushioning are high. The contact pressure is uniform over the entire surface, and it is possible to structurally cope with variations in bump and pad height.
Second, the structure is simple and the manufacturing cost is low (can be reduced to about one fifth or less). Since the entire burn-in board is composed of only a plurality of membrane rings, it is much cheaper than using a multilayer wiring board and anisotropic conductive rubber. Also, since each membrane ring is manufactured individually, the process is simple, the yield is good, and correction is possible.
Third, since each membrane ring can be disassembled, it is easy to correct the defect, and even if the correction is difficult, only the defective membrane ring can be replaced.
[0015]
According to Configuration 2, when the flexible contact board is adsorbed to the wafer by vacuum suction by forming the air holes, the pressure is evenly applied to the entire surface of each layer, and the pressure of the contact becomes more uniform on the entire surface. In the case of the former mode, an air hole is unnecessary in the third membrane ring because a pressure-bonding leak at atmospheric pressure occurs. In the latter case, air holes are also provided in the third membrane ring.
[0016]
According to the configuration 3, by setting the number of laminated membrane rings to four or more, more free design is possible.
[0017]
Configuration 4 shows currently preferred materials for pads, bumps, and membranes.
[0018]
In Configuration 5, by forming a film containing a metal that does not oxidize on the surface of the pad and / or bump, the contact resistance can be reduced and the chemical durability can be increased.
[0019]
Configuration 6 shows a presently preferred material for a film containing a metal that does not oxidize. These films are not oxidized and have good conductivity.
[0020]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below.
[0021]
Embodiment 1
(1) Production of the first membrane ring
Manufacturing process of membrane ring A manufacturing method of the membrane ring will be described with reference to FIG.
[0022]
First, as shown in FIG. 6A, a silicon rubber sheet 3 having a uniform thickness of 5 mm is placed on an aluminum plate 2 having high flatness.
On the other hand, for example, on a film 4 having a structure in which a copper foil having a thickness of 18 μm and a polyimide film having a thickness of 25 μm are bonded, or on a polyimide film having a thickness of 25 μm, the thickness of the copper is 18 μm by sputtering or plating. The film 4 formed in step 1 is prepared.
In addition, the material of the film 4, a formation method, thickness, etc. can be selected suitably. For example, a polyimide film having a thickness of about 25 μm (12 to 50 μm) or a silicon rubber sheet having a thickness of about 0.3 mm (0.1 to 0.5 mm) can be used. The film can be formed by a coating method, or a commercially available film or sheet can be used. Furthermore, after casting a polyimide precursor on a copper foil, the polyimide precursor is heated and dried and cured to form a film having a structure in which the copper foil and the polyimide film are bonded together. Alternatively, a structure in which a plurality of conductive metals are sequentially formed on one surface of a film and a conductive metal layer having a laminated structure is formed on one surface of the film can be used.
Further, a thin Ni film may be formed between polyimide and Cu for the purpose of improving the adhesion between them and preventing film contamination, although not particularly shown.
[0023]
Next, a film 4 having a structure in which a copper foil and a polyimide film are bonded together is adsorbed onto the silicon rubber sheet 3 in a state where the film 4 is uniformly spread with the copper foil side down. At this time, by utilizing the property that the film 4 is adsorbed to the silicon rubber sheet 3, the air layer is expelled and adsorbed so as not to cause wrinkles and deflection, thereby adsorbing in a uniformly developed state.
[0024]
Next, the thermosetting adhesive 5 is thinly and uniformly applied to the adhesion surface of the circular SiC ring 11 having an inner diameter of 220 mmφ, an outer diameter of 240 mmφ, and a height of 2 mm, and is placed on the film 4. . Here, as the thermosetting adhesive 5, an adhesive that cures at a temperature 0 to 50 ° C. higher than the set temperature 80 to 150 ° C. of the burn-in test is used. In the present embodiment, Bond High Chip HT-100L (main agent: curing agent = 4: 1) (manufactured by Konishi Co., Ltd.) was used.
Further, a highly flat aluminum plate (weight approximately 2.5 kg) is placed on the ring 11 as a weight (not shown).
[0025]
After finishing the above preparation process, the film 4 and the ring 11 are bonded by heating at a temperature (for example, 200 ° C., 2.5 hours) equal to or higher than the set temperature (80 to 150 ° C.) of the burn-in test (FIG. 6B). )).
At this time, since the thermal expansion coefficient of the silicon rubber sheet 3 is larger than the thermal expansion coefficient of the film 4, the film 4 adsorbed on the silicon rubber sheet 3 thermally expands by the same amount as the silicon rubber sheet 3. That is, the film 4 is more thermally expanded than when the film 4 is simply heated at a temperature equal to or higher than the set temperature (80 to 150 ° C.) of the burn-in test. In this way, the thermosetting adhesive 5 is cured in a state where the tension is large, and the film 4 and the ring 11 are bonded. Further, since the film 4 on the silicon rubber sheet 3 is adsorbed in a state of being uniformly developed without wrinkles, deflection, or looseness, the film 4 can be adhered to the ring 11 without wrinkles, deflection, or looseness. it can. Furthermore, since the silicon rubber sheet 3 has high flatness and elasticity, the film 4 can be uniformly adhered to the adhesion surface of the ring 11 without unevenness.
In addition, when a thermosetting adhesive is not used, the film shrinks and the tension is weakened. In addition, since the curing time of the adhesive varies depending on the location, the ring cannot be evenly and evenly bonded.
[0026]
After finishing the heating and bonding step, the product is cooled to room temperature and contracted to a state before heating. Thereafter, the film 4 outside the ring 11 is cut and removed along the outer periphery of the ring 11 with a cutter (FIG. 6C). Thereafter, the surface is thoroughly cleaned.
[0027]
In the membrane ring manufacturing process, instead of the SiC ring, SiN, SiCN, Invar nickel, other ceramics having a thermal expansion coefficient close to that of Si, high strength, low expansion glass, metal, and other materials are used. A ring may be used.
Further, a Teflon plate may be used instead of the aluminum plate.
Furthermore, instead of the silicon rubber sheet, a fluororubber having adhesiveness may be used.
Moreover, you may use other commercially available various thermosetting adhesives as a thermosetting adhesive. For example, Ablebond 736 or the like can be used.
[0028]
Process for processing membrane ring Next, a process for forming the bumps and pads by processing the membrane ring produced above will be described.
FIG. 7 is a cross-sectional view of the main part for explaining the processing process of the membrane ring. In FIG. 7, the ring is bonded to the membrane, but the ring is not shown.
[0029]
First, on the copper foil (Cu) of the film 4 having a structure in which the copper foil and the polyimide film in the membrane ring produced above are bonded to each other as shown in FIG. 7A, as shown in FIG. After plating Ni by 0.3 μm (0.1 to 3 μm) by plating, Au is formed thereon by 0.5 μm (0.3 to 5 μm), and Au / Ni / Cu / polyimide film laminated film structure Form.
In addition, although Ni film and Au film can be formed by electroless plating, electroless plating cannot thicken the film and has low adhesion and strength. Preferably formed.
[0030]
Next, as shown in FIG. 7C, a bump hole having a diameter of about 30 μm is formed at a predetermined position of the polyimide film using an excimer laser.
[0031]
Next, as shown in FIG. 7 (d), in order to prevent the surface of the uppermost Au film from being plated, a protective film such as a resist is applied to the entire surface excluding a part of the Au film used as an electrode. The Au film is protected by coating with a thickness of 2 to 3 μm.
In addition to applying a protective film on the Au film, the Ni film can also be protected using a jig.
[0032]
Next, one of the electrodes is connected to the uppermost Au film, and Ni or Ni alloy is electroplated on the polyimide film side. By this electroplating, the plating grows so as to fill the bump holes shown in FIG. 7 (d), and when it reaches the surface of the polyimide film, it expands isotropically and grows into a substantially hemispherical shape. A bump (height 20 μm from the polyimide film surface, diameter 70 μm) is formed.
Subsequently, an electroplating layer made of Au having a thickness of 1 to 2 μm is formed on the surface of the bump. In this way, by forming a film containing a metal that does not oxidize on the bump surface immediately after the bump is formed, oxidation of the bump surface is avoided, and an oxide film removal step becomes unnecessary.
Thereafter, although not particularly shown, the protective film is peeled off.
[0033]
Next, as shown in FIG. 7 (e), a resist (manufactured by Hoechst: AZ1350) is newly applied on the entire surface of Au and baked at 90 ° C. for 30 minutes. The resist is exposed using a photomask, and is removed by development to form a resist pattern in the pad formation portion.
[0034]
Next, as shown in FIG. 7 (f), Au was etched with an iodine / potassium iodide aqueous solution, the Ni film and the Cu film were etched with a 40 Baume ferric chloride aqueous solution, and thoroughly rinsed. The resist is removed to form a pad as shown in FIG. Note that it is desirable to use a spray method for etching because side etching is small.
[0035]
Thereafter, an air hole (through hole) having a diameter of about 100 μm is formed at a predetermined position of the polyimide film using an excimer laser or the like (not shown).
[0036]
1st membrane ring shown in FIG. 1 is produced through the above process. As shown in FIG. 1, in the first membrane ring 10, the first surface of the membrane 12 stretched over the first ring 11 has first bumps 13 that come into contact with each semiconductor device, and the other surface of the membrane 12. The first pad 14 is provided, and an air hole 15 is formed at a predetermined position of the membrane 12.
[0037]
(2) Production of the second membrane ring
Production process of membrane ring A membrane ring was produced in the same manner as in the above (1) except that a circular SiC ring having an inner diameter of 240.1 mmφ, an outer diameter of 260 mmφ, and a height of 2.1 mm was used.
[0038]
Process of membrane ring The second membrane ring (see FIG. 2) (FIG. 2) is used in the same manner as (1) except that the formation positions of the bumps and pads are changed and the shape of the pads is an inner layer wiring pattern. Inner layer wiring membrane ring) was prepared. As shown in FIG. 2, the second membrane ring 20 has a second bump 23 that contacts the first pad 14 on one surface of the membrane 22 stretched over the second ring 21, and the other side of the membrane 22. A second pad 24 serving as an inner layer wiring is provided on the surface of the film 22 and an air hole 25 is formed at a predetermined position of the membrane 22.
[0039]
(3) Production of third membrane ring
Production process of membrane ring A membrane ring was produced in the same manner as in the above (1) except that a circular SiC ring having an inner diameter of 260.1 mmφ, an outer diameter of 285 mmφ, and a height of 2.2 mm was used.
[0040]
3. Process of membrane ring The third embodiment shown in FIG. 3 is the same as (1) above except that the formation positions of the bumps and pads are changed and the shape of the pads is the surface wiring pattern and the peripheral pad. A membrane ring (surface wiring membrane ring) was prepared. As shown in FIG. 3, the third membrane ring 30 has a third bump 33 that contacts the second pad 24 on one surface of the membrane 32 stretched over the third ring 31, and the other side of the membrane 32. On the surface, the surface layer wiring and the third pad 34 as an outer peripheral pad are provided. The outer peripheral pad is formed in a portion located at the upper part of the ring in order to secure strength when contacting the tip of the tester (pogo pin, probe pin) and to stabilize the contact of the pin. Further, the outermost pad (Cu layer) as the uppermost layer was applied to the above-described contact method, and the thickness was set to 10 μm or more in consideration of mechanical strength.
[0041]
(4) Assembly As shown in FIG. 4, the first, second and third membrane rings 10, 20 and 30 produced above are fixed by aligning the respective layers. Next, the lower surfaces of the three rings 11, 21, 31 are fixed with an epoxy resin 36 to complete the flexible contact board 1 of the present invention. The method for fixing the ring is not particularly limited, and known materials and methods can be used. Moreover, a flat plate or the like having good flatness can be interposed on the lower surface of the ring.
[0042]
The flexible contact board of the present invention has a simple structure and a manufacturing cost of about one fifth or less. Moreover, since each membrane ring can be disassembled, it is easy to correct the defect, and even if the correction is difficult, only the defective membrane ring can be easily replaced.
[0043]
(5) Burn-in test Next, the burn-in test will be described.
In the burn-in test, as shown in FIG. 5, the Si wafer 50 is placed on the vacuum chuck 40, and the flexible contact board 1 is placed thereon. The first bumps 13 (contact bumps) in the first membrane ring 10 are brought into contact with the pads formed on the respective semiconductor chips on the wafer 50.
Thereafter, the Si wafer 50 is sucked and fixed by vacuum suction from the vacuum hole 41, and the flexible contact board 1 is sucked and fixed by vacuum suction from the vacuum hole 42. A seal ring 43 is disposed between the first membrane ring 10 and the vacuum chuck 40, and air holes 15 and 25 are provided in the first and second membrane rings 10 and 20, so that a flexible contact is provided. As the board 1 is adsorbed, the pressure is uniformly applied to the entire surface of each layer, and the pressure of the contact becomes more uniform on the entire surface.
The electrode outlet (pogo pin 37) at the tip of the tester is brought into contact with the outer peripheral pad on the third membrane ring 30, and the evaluation is made with this connected tester.
As a result, the flexibility (cushioning property) is high, the contact pressure is uniform over the entire surface, and the height of the bumps and pads can be structurally accommodated. Therefore, there is no misidentification due to poor adhesion.
[0044]
Embodiment 2
As shown in FIG. 8, air holes 35 are formed at predetermined positions of the membrane 32 in the third membrane ring 30 (therefore, air holes 15, 25, 35 are formed in all the membranes 12, 22, 32) and flexible. Except that a highly flat substrate 39 (such as a glass substrate) was placed on the contact board 1 with silicon rubber 38 interposed therebetween, the same procedure as in Embodiment 1 was performed. The seal ring (O-ring) 43 has the same thickness as the silicon rubber 38. The silicon rubber 38 serves to eliminate contact defects due to the pad electrodes on the wafer, bumps on the membranes 12, 22, and 32, and unevenness of the pad electrodes.
When vacuum suction is performed from the vacuum hole 42, the substrate 39 having high flatness can be pressurized through the silicon rubber 38, and the contact property can be further improved.
Since the bumps are basically formed away from each other, the air existing between the bumps can be evacuated according to this method. On the other hand, in Embodiment 1, since there is no air hole on the outermost surface and only a portion below the outermost surface is evacuated, the air existing between the bumps cannot be extracted. In addition, since the membrane is soft, the pressure by the membrane is not strong, but when pressure is applied to the substrate 39 having high flatness, the pressure is strong and effective.
[0045]
In addition, this invention is not limited to the said embodiment, A deformation | transformation can be implemented suitably within the scope of the present invention.
[0046]
For example, materials such as pads, bumps, and membranes, formation methods, and the like are not limited to the above embodiments.
[0047]
Specifically, the material for forming the bump is preferably nickel (Ni) or a nickel alloy from the viewpoint of good conductivity, low cost, easy formation, and good durability, but is not limited thereto. Also, the method for forming the bump hole is not particularly limited, but it is preferably formed using a laser or a photolithography method in consideration of accuracy and economy.
[0048]
The formation material, formation method, thickness, etc. of the pad (conductive layer) can be selected as appropriate. Copper (Cu) is preferable from the viewpoint of good conductivity, low cost, and easy formation. Further, the pad can have a laminated structure of a plurality of metal layers such as Cu, Ni, Cr, Al, Au, and Ag. As a method for forming the pad (conductive layer), a film forming method such as sputtering or vapor deposition, a plating method such as electroless plating or electroplating, or a method of bonding a copper foil can be used. The thickness of the pad (conductive layer) may be at least as thin as about 2 to 5 μm so as not to have a hole by the laser, but about 5 to 35 μm is desirable because durability is required.
[0049]
In addition, instead of Au plating, electroplating with an Au—Co alloy can be performed on the pad surface and the bump surface. In this case, the Au-Co alloy has less wear on the bump and pad surface than Au. That is, since the Au plating of the bumps is electroplating, an alloy can be formed, and pure gold is too soft, so that the hardness can be increased by using an alloy. Further, the same effect can be obtained by forming palladium, rhodium or an alloy containing these metals instead of Au or Au—Co alloy. Electroplating can be performed in a shorter time than electroless plating, and has high mechanical strength and adhesion and is difficult to peel off. Moreover, since the film thickness of plating can be formed thickly, adhesion (contact property) with a contacted part is good.
[0050]
Solder can be coated on the bump surface or the surface of the pad with which the bump contacts.
[0051]
The use of the flexible contact board of the present invention is not particularly limited. For example, in addition to the use as a burn-in board, it can be used for a multilayer wiring board for probe cards, a printed board, a high-density multilayer wiring board represented by an MCM board, a multilayer TAB, an FPC, and the like.
The number of laminated membrane rings in the flexible contact board of the present invention is not limited to three, and may be ten or more. The burn-in board has 3 to 4 layers for memory, 5 to 6 layers for logic, and about 10 layers for hybrid. In the present invention, since a short circuit and a disconnection can be corrected, a contact board having a large number of layers can be obtained with a high yield.
Further, a flexible contact board having two or more layers can be formed by the first membrane ring (contact membrane ring) and the third membrane ring (surface wiring membrane ring).
[0052]
【The invention's effect】
The flexible contact board of the present invention has the following effects.
First, a membrane ring for wiring is used in place of the conventional multilayer wiring board, that is, the entire burn-in board is composed of a plurality of membrane rings, so that the flexibility and cushioning are high. The contact pressure is uniform over the entire surface, and the bumps and pads can be structurally compatible with variations in height, and there is no adhesion failure.
Second, the structure is simple and the manufacturing cost is low (can be reduced to about one fifth or less).
Third, since each membrane ring can be disassembled, it is easy to correct the defect, and even if the correction is difficult, only the defective membrane ring can be replaced.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view schematically showing a first membrane ring in an embodiment of the present invention.
FIG. 2 is a cross-sectional view schematically showing a second membrane ring in an embodiment of the present invention.
FIG. 3 is a cross-sectional view schematically showing a third membrane ring in an embodiment of the present invention.
FIG. 4 is a cross-sectional view schematically showing a flexible contact board according to an embodiment of the present invention.
FIG. 5 is a cross-sectional view showing a state of a burn-in test in an embodiment of the present invention.
FIG. 6 is a cross-sectional view for explaining a membrane ring forming step in an embodiment of the present invention.
FIG. 7 is a cross-sectional view of an essential part for explaining a membrane ring processing step in an embodiment of the present invention.
FIG. 8 is a cross-sectional view showing a state of a burn-in test using a flexible contact board according to another embodiment of the present invention.
FIG. 9 is a diagram for explaining a conventional burn-in board and a test.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Flexible contact board 2 Aluminum plate 3 Silicon rubber sheet 4 Film 5 Thermosetting adhesive 10 1st membrane ring 11 1st ring 12 1st membrane 13 1st bump 14 1st pad 15 Air hole 20 2nd membrane ring 21 1st 2 ring 22 second membrane 23 second bump 24 second pad 25 air hole 30 third membrane ring 31 third ring 32 third membrane 33 third bump 34 third pad 36 seal ring 37 pogo pin 38 silicon rubber 39 flatness High substrate 40 Vacuum chuck 50 Silicon wafer 60 Membrane ring 70 with bumps Anisotropic conductive rubber sheet 80 Multilayer wiring board

Claims (6)

A contact board used to collectively perform a burn-in test of semiconductor devices formed on a wafer.
A bump hole formed on one surface of the membrane stretched over the first ring has a first bump that contacts each semiconductor device, and has a first pad on the other surface of the membrane, penetrating the membrane. A first membrane ring having a structure in which the first bump and the first pad are connected via each other;
The membrane has a second bump that contacts the first pad on one surface of the membrane stretched over a second ring having an inner diameter larger than the outer diameter of the first ring, and a second pad on the other surface of the membrane. A second membrane ring having a structure in which the second bump and the second pad are connected via a bump hole formed through the membrane;
A third bump is provided on one surface of the membrane stretched over a third ring having an inner diameter larger than the outer diameter of the second ring, and the third pad is brought into contact with the second pad, and the third pad is provided on the other surface of the membrane. A third membrane ring having a structure in which the third bump and the third pad are connected through a bump hole formed through the membrane;
Flexible contact board characterized by having 2. An air hole is formed in a membrane in the first membrane ring and the second membrane ring, or an air hole is formed in a membrane in all the first to third membrane rings . Flexible contact board as described.   The second membrane ring corresponding to the membrane ring of the inner layer is a plurality of membrane rings having different ring diameters, and comprises a plurality of membrane rings having the same relationship as between the membrane rings according to claim 1. The flexible contact board according to claim 1 or 2. The pad is made of Cu, the bump is made of Ni or Ni alloy, the flexible contact board according to any one of claims 1 to 3 wherein the membrane is characterized in that it consists of polyimide. The pad and / or on the surface of the bump, flexible contact board according to any one of claims 1 to 4 any or claim, characterized in that the formation of the film containing a metal which is not oxidized.   The flexible contact board according to claim 5, wherein the film containing a metal that is not oxidized is made of any one of gold, Au—Co alloy, rhodium, palladium, and an alloy containing these.

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