JP3458715B2 - Semiconductor device, mounting structure thereof, and method of manufacturing the same - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor chip mounting technique, and more particularly to a semiconductor device in which pyramidal shapes, which are protruding electrodes, are formed on the semiconductor chip with high density so that the semiconductor device can be mounted on a substrate, and a mounting structure thereof. The manufacturing method is related.

[0002]

2. Description of the Related Art In semiconductor devices such as microcomputers, the integrated circuits are becoming more and more multifunctional and higher in density, the number of terminals for connecting to external circuits is rapidly increasing, and the complexity is increasing. Is coming. Therefore, the wire bonding method for connecting the wire bonding provided around the semiconductor chip to the external circuit has already reached its limit. In addition, the wire bonding method has a drawback that since the wiring in the internal area is laid around to the bonding pads in the peripheral portion, the wiring length becomes long and the signal transmission speed is delayed. , Not suitable. For this reason, the key is to reduce the internal connection area, and in this respect, flip-chip connection, which can limit the connection area on the chip, is attracting attention as a powerful connection technology. The flip chip method has an advantage that the number of pins of the chip can be promoted because terminals can be provided not only in the periphery of the chip but also in the internal region. Further, the flip-chip method can shorten the wiring length on the chip as compared with the wire-bending method, and therefore has an advantage that the speedup of the logic LSI can be promoted.

Therefore, as a conventional method of forming a protruding electrode on a chip by a flip-chip method, Japanese Patent Laid-Open No. 6-2 is known.
The method described in Japanese Patent No. 68201 is known.

[0004]

The conventional flip-chip method for forming a protruding electrode on a chip is a photolithography process in which the semiconductor chip is cut out, a multi-layer metal film forming process, and a solder melting process. The chip itself will be subjected to severe conditions such as a heat treatment step for performing the heat treatment. Further, it takes a long time to complete the process, which causes a problem that an initially good chip in a cut state becomes defective under the severe conditions, or a yield is reduced due to an operation error. In addition, there is a problem in that such a process requires a high cost due to reasons such as workability and economical efficiency on the device. That is, in the method of forming the protruding electrode on the semiconductor chip cut out from the wafer, in the conventional technique, a step of performing a good semiconductor chip under severe conditions is performed many times, and further, the process completion is long, There is a problem that the manufacturing process becomes complicated. This reduces the yield.
Further, when the solder is melted and formed by the forming method according to the conventional technique, there is a large problem that the height is largely varied and a conduction failure occurs at the time of connection with the substrate.

An object of the present invention is to solve the above problems.
It is an object of the present invention to provide a semiconductor device and a mounting structure for the same that enable high-density mounting without causing conduction failure during connection with a substrate.

Another object of the present invention is to provide a semiconductor device and a mounting structure for the same which enable high-density mounting easily and at low cost without causing conduction failure when connecting to a substrate. Especially.

Another object of the present invention is to simplify the manufacturing process and to bond a novel protruding electrode to a pad electrode of a semiconductor chip to manufacture a low-cost semiconductor device. It is to provide a method for manufacturing a device.

[0008]

In order to achieve the above object, according to the present invention, each of a plurality of pyramidal protrusion electrodes such as a quadrangular pyramid is bonded to each pad electrode arranged on a semiconductor chip. It is a semiconductor device characterized by being configured. Further, the present invention is characterized in that each of a plurality of pyramidal protrusion electrodes such as a quadrangular pyramid is bonded to each pad electrode arranged on a semiconductor chip via an anisotropic conductive film. It is a semiconductor device. Further, the present invention is a semiconductor device characterized in that each of a plurality of pyramid-shaped protruding electrodes such as a quadrangular pyramid is bonded to each pad electrode arranged on a semiconductor chip by thermocompression bonding. . Further, the present invention is characterized in that each of a plurality of pyramidal protrusion electrodes such as a quadrangular pyramid is alloyed and bonded to each pad electrode arranged on a semiconductor chip by thermocompression bonding. Is a device.

Further, the present invention is characterized in that, in the semiconductor device, the base material of each of the protruding electrodes is made of hard Ni. Further, the present invention is characterized in that, in the semiconductor device, the base material of each of the protruding electrodes is made of soft Cu.

Further, the present invention relates to a semiconductor device constituted by bonding each of a plurality of pyramidal protrusion electrodes such as a quadrangular pyramid onto each pad electrode arranged on a semiconductor chip, wherein each of the protrusion electrodes is a substrate. A mounting structure for a semiconductor device, characterized in that the mounting structure is joined to each terminal formed above and mounted. Further, the present invention relates to a semiconductor device configured by bonding each of a plurality of pyramidal protrusion electrodes such as a quadrangular pyramid on each pad electrode arranged on a semiconductor chip via an anisotropic conductive film, A mounting structure for a semiconductor device, characterized in that each protruding electrode is bonded to each terminal formed on a substrate to be mounted. Further, the present invention relates to a semiconductor device in which each of a plurality of pyramidal protrusion electrodes such as a pyramid is bonded to each pad electrode arranged on a semiconductor chip by thermocompression bonding, and each of the protrusion electrodes is a substrate. A mounting structure for a semiconductor device, characterized in that the mounting structure is joined to each terminal formed above and mounted. Further, the present invention relates to a semiconductor device configured by alloying and bonding each of a plurality of pyramid-shaped protrusion electrodes such as a pyramid on each pad electrode arranged on a semiconductor chip by thermocompression bonding. A mounting structure for a semiconductor device, characterized in that an electrode is bonded to each terminal formed on a substrate for mounting.

Further, the present invention relates to a semiconductor device constituted by bonding each of a plurality of pyramidal protrusion electrodes such as a quadrangular pyramid onto each pad electrode arranged on a semiconductor chip. It is a mounting structure for a semiconductor device, which is mounted by soldering to each terminal formed above. Further, the present invention relates to a semiconductor device configured by bonding each of a plurality of pyramidal protrusion electrodes such as a quadrangular pyramid on each pad electrode arranged on a semiconductor chip via an anisotropic conductive film, It is a mounting structure for a semiconductor device, characterized in that each protruding electrode is soldered and mounted to each terminal formed on a substrate. Further, the present invention is a semiconductor device constituted by bonding each of a plurality of pyramidal-shaped protruding electrodes such as a pyramid on each pad electrode arranged on a semiconductor chip by thermocompression bonding,
A mounting structure for a semiconductor device, characterized in that each of the protruding electrodes is solder-bonded to each terminal formed on a substrate for mounting.

Further, the present invention relates to a semiconductor device constituted by alloying and bonding each of a plurality of pyramidal protrusion electrodes such as a quadrangular pyramid onto each pad electrode arranged on a semiconductor chip by thermocompression bonding. A mounting structure for a semiconductor device, characterized in that each of the protruding electrodes is solder-bonded to each terminal formed on a substrate for mounting. Further, the present invention relates to a semiconductor device in which each of a plurality of pyramidal protrusion electrodes such as a pyramid is bonded on each pad electrode arranged on a semiconductor chip, and each protrusion electrode is formed on a substrate. A mounting structure for a semiconductor device, characterized in that it is bonded to each of the formed terminals, and the semiconductor device and the substrate are bonded together with an adhesive for mounting. Further, the present invention relates to a semiconductor device configured by bonding each of a plurality of pyramidal protrusion electrodes such as a quadrangular pyramid on each pad electrode arranged on a semiconductor chip via an anisotropic conductive film, A mounting structure for a semiconductor device, characterized in that each protruding electrode is bonded to each terminal formed on a substrate, and the semiconductor device and the substrate are mounted by bonding with an adhesive.

Further, the present invention relates to a semiconductor device in which each of a plurality of pyramid-shaped protrusion electrodes such as a pyramid is bonded to each pad electrode arranged on a semiconductor chip by thermocompression bonding. A mounting structure for a semiconductor device, characterized in that an electrode is bonded to each terminal formed on a substrate, and the semiconductor device and the substrate are mounted by bonding with an adhesive. Further, the present invention relates to a semiconductor device configured by alloying and bonding each of a plurality of pyramid-shaped protrusion electrodes such as a pyramid on each pad electrode arranged on a semiconductor chip by thermocompression bonding. A mounting structure for a semiconductor device, characterized in that an electrode is bonded to each terminal formed on a substrate, and the semiconductor device and the substrate are mounted by bonding with an adhesive.

Further, according to the present invention, in the mounting structure of the semiconductor device, the base material of each protruding electrode in the semiconductor device is hard Ni. Further, the present invention is the mounting structure of the semiconductor device, wherein the base material of each protruding electrode in the semiconductor device is
It is characterized by being soft Cu.

Further, according to the present invention, a pyramid in which a pyramidal hole such as a quadrangular pyramid is formed by photolithographic etching in correspondence with a plurality of pad electrodes arranged on a semiconductor chip on a substrate having a specific crystal orientation surface. -Shaped hole forming step, a pattern forming step of forming a pattern made of an organic material on the base material according to each pyramid-shaped hole formed in the pyramid-shaped hole forming step, and the pyramid-shaped hole forming step A conductive material filling step of filling the inside of each pyramidal hole formed in the step and each pattern formed in the pattern forming step with a conductive material to remove the pattern made of the organic material to form a pyramidal projection electrode And a bonding step of bonding the pyramid-shaped protruding electrodes formed in the conductive material filling step and the pad electrodes arranged on the semiconductor chip, and the bonding step on the semiconductor chip. Is a manufacturing method of a semiconductor device, characterized in that it comprises a separation step of separating the projecting electrodes of each pyramid shape which is joined to each pad electrode being columns from the substrate.

Further, according to the present invention, the protruding electrode formed on the semiconductor chip has a pyramidal shape such as a quadrangular pyramid. This is an electrical connection to the outside by forming a pattern, which is the reverse of the pad electrode on the semiconductor chip, on a base material having another specific crystal orientation plane and then transferring it to the pad electrode on the semiconductor chip. A protruding electrode having a pyramidal shape such as a quadrangular pyramid is formed to obtain As a result, the manufacturing process can be simplified and the cost can be reduced without changing the non-defective semiconductor chip to severe conditions. Further, the present invention is characterized by being a silicon substrate having a <100> crystal orientation as a substrate having a specific crystal orientation surface. As described above, according to the above configuration, it is possible to obtain a semiconductor device capable of high-density mounting without eliminating height variations and without causing conduction failure when connecting to a substrate.

Further, according to the above structure, a mounting structure for a semiconductor device, which enables high-density mounting easily and at low cost, without causing unevenness in height and without causing conduction failure when connecting to a substrate, is provided. It can be realized. Further, with the above configuration, the manufacturing process is simplified, and the new protruding electrode is bonded to the pad electrode of the semiconductor chip,
A low-cost semiconductor device can be manufactured.

[0018]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described with reference to the drawings.

First, a first embodiment 1a of a semiconductor device which can be highly accurately mounted on a substrate such as a printed circuit board.
Will be described with reference to FIGS. FIG. 1 is a sectional view showing a first embodiment of a semiconductor device which can be mounted on a substrate such as a printed circuit board with high precision. 1a is
1 shows a first embodiment of a semiconductor device. 2 is a semiconductor chip. Reference numeral 3 denotes a pad electrode formed in a two-dimensional array on the semiconductor chip 2, and reference numeral 4 denotes a protective film covering the semiconductor chip 2 by exposing the pad electrode 3. Reference numeral 5 denotes a protruding electrode formed on the pad electrode 3 for mounting the semiconductor chip 2 on a substrate 21 such as a printed circuit board with high precision. Reference numeral 9 is an anisotropic conductive sheet for conductively connecting the pad electrode 3 and the protruding electrode 5. The bump electrodes 5 are mounted in high density (for example, 0.2 mm or less, for example, 0.
13 mm or 0.1 mm, and even a pitch of 0.1 mm or less), one side of the bottom surface is, for example, 10 to 10 mm.
It has a pyramid shape such as a quadrangular pyramid whose tip is sharpened at 60 μm,
A plating film 6 of gold or the like is formed on the surface facing the pad electrode 3, and a plating film 8 of gold or the like is formed on the surface connected to the terminals 22 formed on the substrate 21.
Is formed. Naturally, it is possible to form a pyramid shape such as a quadrangular pyramid so that one side of the bottom surface is 60 μm or more.
As will be described later, this bump electrode 5 can be manufactured with high density and without variation in size (especially height). The bump electrodes 5 are connected to each other by bonding the metals to each other by thermocompression bonding at about 200 ° C. to 300 ° C. with the pad electrode 3 formed on the semiconductor chip 2 and the anisotropic conductive sheet 9 sandwiched therebetween. The quadrangular pyramid-shaped protruding electrode 5 is
Since it is formed by patterning the mold material by photolithography, its position and size are determined with high accuracy, and as a result, it has a high density and corresponds to the pad electrode 3 formed on the semiconductor chip 2. Dimensions (especially height)
It will be installed without any variation.

Protruding electrode 5 constituting the semiconductor device 1a
Terminals 22 formed on a board 21 such as a printed board on which are mounted are connected to wirings 23. Then, the wiring 23 is extended inside the substrate to be connected to other semiconductor devices and other circuits. Further, the terminals 22 formed on the substrate 21 are made of a material such as Cr having the same low resistance as the wiring. It should be noted that a plating film such as Ni, which is not easily oxidized, or a plating film such as Au may be formed on the surface of a material such as Cr.

Projection electrode 5 constituting the semiconductor device 1a
The terminals 22 formed on the substrate 21 are mounted by thermocompression bonding as shown in FIG. 2 or by soldering. Further, as shown in FIG. 3, the surface of the substrate 21 and the anisotropic conductive sheet 9 of the semiconductor device 1a are adhered by an adhesive or an adhesive sheet 25, and the semiconductor device 1a includes the protruding electrodes 5 and the terminals 22. The substrate 2 in a state of being electrically conductively bonded to the substrate 2
It will be firmly mounted on 1.

Next, a second embodiment of a semiconductor device which can be mounted on a substrate such as a printed circuit board with high precision will be described.
b and 1c will be described with reference to FIGS. Figure 4
FIG. 8 is a cross-sectional view showing a second embodiment of a semiconductor device that can be highly accurately mounted on a substrate such as a printed circuit board. 1b and 1c show the second embodiment of the semiconductor device. In the second embodiment 1b, 1c of the semiconductor device shown in FIG. 4, the first semiconductor device shown in FIG.
The difference from Embodiment 1a is in the method of joining the protruding electrode 5 and the pad electrode 3 formed on the semiconductor chip 2. In the first embodiment 1a of the semiconductor device, the protruding electrode 5 and the pad electrode 3 are joined by sandwiching the anisotropic conductive sheet 9 by thermocompression bonding, but in the second embodiment 1b, 1c of the semiconductor device. The bump electrode 5 and the pad electrode 3 are thermocompression bonded to each other to be metal-bonded by the alloy 10 of gold and tin. Also in this second embodiment 1b and 1c, the pyramidal-shaped protruding electrode 5 such as a quadrangular pyramid corresponds to the pad electrode 3 formed on the semiconductor chip 2 as in the first embodiment 1a. Therefore, they are arranged at high density and without variations in size (especially height).

A method of mounting the semiconductor devices 1b and 1c configured as shown in FIG. 4 on the substrate 21 such as a printed circuit board is shown in FIGS. 5 and 6 as in FIGS. 2 and 3. The bump electrodes 5 forming the semiconductor device 1a and the terminals 22 formed on the substrate 21 are mounted by thermocompression bonding as shown in FIG. 5 or by soldering. Further, as shown in FIG. 6, the surface of the substrate 21 and the pad electrodes 3 and the protective film 4 of the semiconductor device 1a are adhered by an adhesive or an adhesive sheet 25, and the semiconductor device 1a includes the protruding electrodes 5 and terminals. In the state of being electrically conductively joined with 22,
It is firmly mounted on the substrate 21.

As described above, the first and second
According to the embodiment of the present invention, a large number of solder balls are used to join a large number of pad electrodes 3 formed on the semiconductor chip 2 and a large number of terminals 22 formed on the substrate 21. A jig for supplying and arranging the solder balls is not necessary, and there are no places where the bonding is insufficient due to variations in the diameters of the many solder balls, and there are many pad electrodes 3 formed on the semiconductor chip 2 and the substrate 21. It is possible to perform uniform and high-density mounting over the entire number of formed terminals 22. That is, according to the first and second embodiments, there is no height variation, and a large number of contacts are densely formed, that is, 0.2.
High-accuracy mounting, that is, high-density mounting that can be arranged so as to be compatible with pitches of 13 mm, 0.1 mm, or even 0.1 mm or less can be realized at low cost without using a jig or the like.

Next, a protruding electrode 5 having a pyramidal shape such as a quadrangular pyramid having a sharp tip is formed, and the protruding electrode 5 is bonded onto the pad electrode 3 formed on the semiconductor chip 2 to manufacture a semiconductor device. The manufacturing method to be described will be described with reference to FIGS. 7, 8 and 9. The first embodiment shown in FIG. 7 will be described. First, a method of forming a pyramid shape such as a quadrangular pyramid will be described. That is, first, a silicon dioxide film 31 of about 0.5 μm is formed on both surfaces of a silicon substrate 32 having a <100> crystal orientation by thermal oxidation, and a specific crystal having the silicon dioxide oxide film 31 on the surface is formed. A silicon wafer substrate having an oriented surface is obtained. Next, as shown in FIG. 7A, the thermal oxide film 31 is photolithographically etched on the silicon substrate to form the pad electrode 3 of the semiconductor chip 2.
And it is processed into an inverted pattern. Next, as shown in FIG. 7B, the silicon substrate is anisotropically etched using an alkaline etching solution using the thermal oxide film 31 on the silicon substrate as a mask to form a quadrangular pyramid surrounded by <111> planes. Etching holes (quadrangular pyramid shape) 36 are formed on the silicon substrate. That is, a quadrangular pyramid etching hole (quadrangular pyramid shape) 36 surrounded by the <111> plane is formed on the silicon substrate by anisotropic etching. Next, the thermal oxide film on the silicon substrate is removed, and a new <111
A silicon dioxide film of about 0.5 μm is formed on the surface> by thermal oxidation in wet oxygen. And FIG.
As shown in (c), a multi-layer metal film including a plating power feeding film (Cr film) 35 and a plating power feeding film (Ni film) 34 is formed on the silicon substrate surface, and further, a concave pattern having a quadrangular pyramid is formed. A pattern 33 made of an organic material for forming a plating film to be the metal at the tip of the is formed. Next, as shown in FIG. 7D, a pattern 33 made of an organic material is formed.
Hard Ni or soft C by electroplating in the opening of
A plating film 6 of u or the like is filled and formed. Subsequently, after cleaning and drying the substrate that has undergone the above-mentioned steps, in order to prevent oxidation and secure the connection only to the hard plated film 6 of Ni or the like, as shown in FIG.
As shown in (e), a gold plating film 7 is applied. After that, as shown in FIG. 7F, the pattern 33 made of an organic material is stripped using a resist stripping solution. As described above, the bump electrode 5 having a quadrangular pyramid shape on the surface of the silicon base material could be manufactured with high accuracy.

Next, a method of connecting the pad electrode 3 of the semiconductor chip 2 and the pyramidal protrusion electrode 5 such as a quadrangular pyramid formed on the surface of the silicon wafer base material will be described. That is,
As shown in FIG. 7 (g), a large number of pad electrodes 3 arranged on a non-defective semiconductor chip 2 and a large number of quadrangular pyramid-shaped protruding electrodes 5 formed on the surface of a silicon wafer substrate are used as anisotropic conductive films. After aligning the electrodes with each other through the contact 9, the electrodes are joined by thermocompression bonding so that the conductive particles present in the anisotropic conductive sheet 9 are sandwiched therebetween. Next, the chromium film 35, which is the lowermost layer of the multi-layer metal films 35, 34, which is a plating power feeding film, which is in contact with the silicon base material surface, is formed on the silicon base material surface on which the concave pattern having the quadrangular pyramid is formed. Of the thermal oxide film 31 that is in contact with the silicon substrate surface of 34 by a selective etching solution that does not attack other metal films, and then is removed by dissolution. The chromium and Cu films are etched, and as shown in FIG. 7H, the pyramidal projection electrodes 5 such as quadrangular pyramids are separated and transferred from the silicon substrate surface to the semiconductor chip.
Subsequently, after washing, in order to make good electrical connection with the outside on the surface of the pyramidal-shaped protruding electrodes (convex patterns) 5 such as the separated pyramids, as shown in FIG. Then, the gold plating film 8 is formed. The chromium etching solution, thermal oxide film etching solution composition and conditions are shown below.

Chromium film etching liquid composition and conditions Aluminum chloride 6 crystal water: 250 g / liter Hydrochloric acid: 300 ml / liter Water: Volume of 1 liter Conditions Liquid temperature: 50 ° C. Time: All chromium Dissolution time Thermal oxide film etching solution composition and conditions 50% -hydrofluoric acid ... 140% -ammonium fluoride 7 Volume ratio conditions Liquid temperature: room temperature Time: More than the time at which all thermal oxide films are dissolved As described above, the bump electrodes 5 having a new pyramid shape such as a square pyramid for external connection are formed on each pad electrode 3 arranged on the good semiconductor chip 2 with high accuracy. I was able to. As a result, high-accuracy mounting in which a large number of contacts for the semiconductor chip 2 can be arranged can be executed with high accuracy without variation in height and easily.
Cost reduction has become possible. That is, the manufacturing method shown in the first embodiment enables extremely high-precision mounting, that is, high-density mounting. Also, after each of the plurality of pyramid-shaped protruding electrodes 5 is separately transferred to each pad electrode 3 on the semiconductor chip 2, the pyramidal hole 36 such as a quadrangular pyramid formed in the base material 32 such as silicon is broken. Therefore, the base material 32 such as silicon can be repeatedly used any number of times, and the cost can be reduced.

Next, a second embodiment shown in FIG. 8 will be described. 8 (a) to 8 (a) in the second embodiment shown in FIG.
The manufacturing steps shown up to (d) are the same as the manufacturing steps shown in FIGS. 7 (a) to 7 (d) in the first embodiment shown in FIG. Then, after filling the Ni plating film 6, the substrate is washed, and then the Sn plating film 11 is applied only to the Ni plating film 6 as shown in FIG. After that, as shown in FIG. 8F, the pattern 33 made of an organic material is peeled off using a resist peeling liquid. As described above, the protruding electrode 5 having a pyramid shape such as a quadrangular pyramid on the surface of the silicon base material can be manufactured with high accuracy.

Next, a method of connecting the pad electrode 3 of the semiconductor chip 2 and the pyramidal protrusion electrode 5 such as a quadrangular pyramid formed on the surface of the silicon wafer base material will be described. That is,
As shown in FIG. 8G, gold stud bumps 12 are formed in advance in the contact holes on the semiconductor chip side (on the pad electrodes 3 of the semiconductor chip 2) by the wire bonding method. Next, as shown in FIG. 8 (h), a large number of pad electrodes 3 of the good semiconductor chip 2 and a large number of pyramidal protrusion electrodes 5 such as a square pyramid formed on the silicon substrate surface are
After aligning the electrodes, thermocompression bonding
When the temperature is set to 230 ° C. or higher, the tin plating film 11 is melted and reacts with the gold stand bumps 12 to form an alloy of the gold stand bumps 12 and the tin plating film 11 to be metal-bonded and bonded. After that, as in the first embodiment, the multilayer metal film 3 which is a plating power feeding film is formed on the surface of the silicon base material on which the concave pattern having the pyramid shape such as a square pyramid is formed.
The lowermost chromium film 35, which is in contact with the silicon base material surface out of the reference numerals 5 and 34, is dissolved and removed by an etching solution having a selectivity that does not attack other metals, and the protruding electrode 5 having a quadrangular pyramid shape is formed from the silicon base material surface. Separately transfer to a semiconductor chip. Then, after washing, the separated pyramid-shaped protruding electrodes (convex pattern)
In order to make good electrical connection with the outside, the gold plating film 8 is formed as shown in FIG. Here, the description has been given on the case where an alloy of gold and tin is formed and joined, but the present invention is not limited to this, and a connection method such as high temperature solder may be used.

As described above, the projection electrode 5 having a novel pyramid shape for connecting to the outside was formed on the good semiconductor chip. Thus, the semiconductor device 1b
By manufacturing, it is possible to realize high-accuracy mounting in which a large number of contacts for the semiconductor chip 2 can be arranged, with high accuracy without variation in height, and easily, and it is possible to reduce costs. That is, also in the manufacturing method shown in the second embodiment, as in the manufacturing method in the first embodiment, extremely high precision mounting, that is, high density mounting is possible. Also, after each of the plurality of pyramid-shaped protruding electrodes 5 is separately transferred to each pad electrode 3 on the semiconductor chip 2, the pyramidal hole 36 such as a quadrangular pyramid formed in the base material 32 such as silicon is broken. Therefore, the base material 32 such as silicon can be repeatedly used any number of times, and the cost can be reduced.

Next, a third embodiment shown in FIG. 9 will be described. 9A to 9C in the third embodiment shown in FIG.
The manufacturing steps shown up to (f) are the same as the manufacturing steps shown in FIGS. 8A to 8F in the second embodiment shown in FIG. That is, after filling the plating film 6 of hard Ni or the like, the substrate is washed, and thereafter, as shown in FIG.
The Sn plating film 11 is applied only to the plating film 6 such as i. After that, as shown in FIG. 9F, the pattern 33 made of an organic material is peeled off using a resist peeling liquid. As described above, the protruding electrode 5 having a pyramid shape such as a quadrangular pyramid is formed as in the second embodiment. The protruding electrode 5 having a pyramidal shape such as a quadrangular pyramid can be manufactured with high accuracy on the surface of the silicon base material.

Next, a method of connecting the pad electrode 3 of the semiconductor chip 2 and the quadrangular pyramid-shaped protruding electrode 5 formed on the surface of the silicon wafer base material will be described. That is, the surface of the contact hole (pad electrode 3 of the semiconductor chip 2) on the semiconductor chip side is generally made of aluminum alloy.
Therefore, as shown in FIG. 9G, an electroless nickel plating film 13 is formed on the surface of the contact hole (pad electrode 3) by a plating technique. Subsequently, the gold plating film 14 is applied.
That is, the surface of the pad electrode 3 of the semiconductor chip 2 is modified to a surface made of nickel / gold. After that, FIG.
As shown in (h), after a number of pad electrodes 3 of a good semiconductor chip 2 and a number of pyramidal protrusion electrodes 5 such as a quadrangular pyramid formed on a silicon substrate surface are aligned with each other. When thermocompression bonding is performed and the temperature is set to 230 ° C. or higher, the tin plating film 11 melts and reacts with the gold plating film 14 to form an alloy of gold and tin, which is metal-bonded and bonded. After that, as in the first and second embodiments, the lowermost layer film of the multilayer metal films 35 and 34, which is the plating power feeding film, which is in contact with the silicon base material surface is formed on the silicon base material surface having the concave pattern having the quadrangular pyramid. The chromium film 35 is dissolved and removed by an etching solution having a selectivity that does not attack other metals, and the pyramidal projection electrodes 5 are separated and transferred from the silicon substrate surface to the semiconductor chip. Subsequently, after cleaning, in order to make good electrical connection to the outside on the surface of the separated pyramidal projection electrode (convex pattern) 5, as shown in FIG.
To form. Here, the description has been given on the case where an alloy of gold and tin is formed and joined, but the present invention is not limited to this, and a connection method such as high temperature solder may be used.

As described above, the projection electrode 5 having a new pyramid shape such as a quadrangular pyramid for connecting to the outside is formed on the good semiconductor chip. By manufacturing the semiconductor device 1c in this manner, it is possible to realize high-precision mounting in which a large number of contacts for the semiconductor chip 2 can be arranged, with high accuracy without variation in height, and also to reduce cost. It has become possible. That is, also in the manufacturing method shown in the third embodiment, as in the manufacturing methods of the first and second embodiments, extremely high-precision mounting, that is, high-density mounting is possible.

The present invention is not limited to the above-described embodiment, but each of the plurality of pyramidal protrusion electrodes is electrically connected to another pad electrode arranged on the semiconductor chip, for example, another connecting portion. It is also possible to join the so-called rewiring metal parts having different electrode pitches by using the same technical idea.

[0035]

According to the present invention, variations in height are eliminated and conduction defects are not generated when connecting to a substrate.
It is possible to obtain a semiconductor device that enables high-density mounting. Further, according to the present invention, a mounting structure of a semiconductor device is realized which eliminates the variation in height and does not cause conduction failure when connecting to a substrate, and which enables high-density mounting easily and at low cost. There is an effect that can be done. Further, according to the present invention, there is an effect that the manufacturing process is simplified and the novel protruding electrode is bonded to the pad electrode of the semiconductor chip to manufacture a low-cost semiconductor device. That is, it becomes possible to bond a new protrusion electrode having a pyramidal shape such as a quadrangular pyramid for electrical connection to the outside with high precision on a high density pad electrode arranged on a semiconductor chip. The process can be shortened, and the mass productivity can be improved. Particularly, in the method of bonding a new protruding electrode having a pyramid shape such as a quadrangular pyramid onto a high-density pad electrode arranged on the semiconductor chip with high accuracy, a good semiconductor chip is subject to severe conditions. In addition, it is possible to simplify the manufacturing process and manufacture at low cost.

[Brief description of drawings]

FIG. 1 is a sectional view showing a first embodiment of a semiconductor device according to the present invention.

FIG. 2 is a sectional view showing an embodiment in which the first embodiment of the semiconductor device according to the present invention is mounted on a substrate.

FIG. 3 is a cross-sectional view showing another embodiment of mounting the first embodiment of the semiconductor device according to the present invention on a substrate.

FIG. 4 is a sectional view showing a second embodiment of a semiconductor device according to the present invention.

FIG. 5 is a cross-sectional view showing one embodiment of mounting the second embodiment of the semiconductor device according to the present invention on a substrate.

FIG. 6 is a sectional view showing another embodiment of mounting the second embodiment of the semiconductor device according to the present invention on a substrate.

FIG. 7 is a diagram showing a process flow showing a first example for manufacturing the first embodiment of the semiconductor device according to the present invention.

FIG. 8 is a diagram showing a process flow showing a second example for manufacturing the second embodiment of the semiconductor device according to the present invention.

FIG. 9 is a diagram showing a process flow showing a third example for manufacturing the second embodiment of the semiconductor device according to the present invention.

[Explanation of symbols]

1, 1a, 1b, 1c ... Semiconductor device, 2 ... Semiconductor chip, 3 ... Pad electrode, 4 ... Protective film, 5 ... Projection electrode, 6 ... Hard Ni or soft Cu plating film, 7, 8 ... Au plating film, 9 ... Anisotropic conductive sheet, 10 ...
Alloy of gold and tin, 21 ... Substrate, 22 ... Terminal, 23 ... Wiring, 31 ... Thermal oxide film, 32 ... Silicon base material, 33
... Organic material pattern, 34 ... Plating power supply film
(Ni film), 35 ... Plating power supply film (Cr film), 36
… Square pyramid etching hole, 11… Sn plating film,
12 ... Gold stand bump, 13, 14 ... N
i / Au plating film.

Front page continuation (72) Inventor Teruaki Mori No.292 Yoshida-cho, Totsuka-ku, Yokohama, Kanagawa Prefecture Manufacturing Technology Research Laboratory, Hitachi, Ltd. (56) Reference JP-A-9-172021 (JP, A) JP-A 9-115913 (JP, A) JP 8-148491 (JP, A) JP 4-164342 (JP, A) JP 64-81344 (JP, A) JP 57-207362 (JP, A) JP-A-8-191072 (JP, A) JP-A-6-163549 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) H01L 21/60 H01L 21/92 H01L 21 / 3205

Claims (24)

(57) [Claims] 1. A pyramid-shaped hole forming step of forming a pyramid-shaped hole by photolithography in correspondence with a plurality of pad electrodes arranged on a semiconductor chip on a base material having a specific crystal orientation surface, A pattern forming step of forming on the substrate a pattern made of an organic material corresponding to each pyramidal hole formed in the pyramidal hole forming step; and each pyramidal shape formed in the pyramidal hole forming step A conductive material filling step of filling a conductive material into the holes and in each pattern formed in the pattern forming step to remove the pattern made of the organic material to form a pyramidal projection electrode; and the conductive material filling step. A bonding step of bonding the formed pyramidal-shaped protruding electrodes and the pad electrodes arranged on the semiconductor chip to the pad electrodes arranged on the semiconductor chip in the bonding step. And a separation step of separating the joined pyramidal projection electrodes from the base material. 2. A method of manufacturing a semiconductor device, which comprises a step of forming a bump electrode of the semiconductor device, and the projection.
The step of connecting the electrode and the pad electrode of the semiconductor device
In the step of forming the protruding electrode, the crystalline substrate is anisotropically etched to form a pyramidal shape.
There is a step of forming a hole and a step of plating a metal to fill the pyramid-shaped hole.
A method for manufacturing a semiconductor device, comprising: 3. A method of manufacturing a semiconductor device according to claim 2.
And forming the pyramidal holes and filling the pyramidal holes.
During the process, on the crystalline substrate and on the side of the pyramid-shaped hole
The surface is the same material as the metal for the metal plating below
There is a step of forming a ground film, and the metal is plated using the base film to form the pyramidal hole.
A method for manufacturing a semiconductor device, which comprises filling. 4. A method of manufacturing a semiconductor device according to claim 2.
A first acid formed on the surface of the crystalline substrate before the step of forming the pyramidal hole.
Etching the oxide film to the position corresponding to the pyramidal hole
A step of forming a first pattern having an opening , and using the first pattern as a mask,
Method of manufacturing semiconductor device characterized by forming holes
Law. 5. A method of manufacturing a semiconductor device according to claim 2.
A step of forming the protruding electrode, wherein the step of forming the bump electrode is the first acid formed on the surface of the crystalline substrate.
Etching the oxide film to form a first pattern with openings at the positions corresponding to the pyramidal holes.
A step of forming a turn, and using the first pattern as a mask,
A step of forming a hole, a step of removing the first oxide film, and a step of newly forming a second oxide film in the pyramid-shaped hole
And plating the metal to fill the pyramidal holes
A method for manufacturing a semiconductor device, comprising: 6. A method of manufacturing a semiconductor device according to claim 2.
The method of plating the metal to fill the pyramidal shaped holes.
Later, a step of further forming a gold plating layer on the metal plating layer
A method of manufacturing a semiconductor device, comprising: 7. A method of manufacturing a semiconductor device according to claim 5.
The method of plating the metal to fill the pyramidal shaped holes.
Later, a step of further forming a gold plating layer on the metal plating layer
A method of manufacturing a semiconductor device, comprising: 8. A method of manufacturing a semiconductor device according to claim 2.
Method, plating Ni as the metal to fill the pyramidal hole
A method for manufacturing a semiconductor device, comprising: 9. A method of manufacturing a semiconductor device according to claim 5.
Method, plating Ni as the metal to fill the pyramidal hole
A method for manufacturing a semiconductor device, comprising: 10. Manufacturing of a semiconductor device according to claim 2.
And filling the pyramidal holes with Cu as the metal.
A method for manufacturing a semiconductor device, comprising: 11. Manufacturing of a semiconductor device according to claim 5.
And filling the pyramidal holes with Cu as the metal.
A method for manufacturing a semiconductor device, comprising: 12. Manufacturing of a semiconductor device according to claim 2.
A method of connecting the bump electrode to a pad electrode of the semiconductor device
After the step, further has the positive of forming a gold layer on the surface of the bump electrode
A method for manufacturing a semiconductor device, comprising: 13. Manufacturing of a semiconductor device according to claim 5.
A method of connecting the bump electrode to a pad electrode of the semiconductor device
After the step, further has the positive of forming a gold layer on the surface of the bump electrode
A method for manufacturing a semiconductor device, comprising: 14. Manufacturing of a semiconductor device according to claim 3.
A method, wherein a Cr layer is formed as the plating underlayer, and the Cr layer is formed on the Cr layer.
Manufacturing of semiconductor device characterized by forming Ni layer
Method. 15. Manufacturing of the semiconductor device according to claim 14.
A manufacturing method, wherein the bump electrode and the pad electrode of the semiconductor device are connected
In the step, the crystallinity is obtained by removing the Cr.
The protruding electrode on the substrate to the pad electrode of the semiconductor device
A method for manufacturing a semiconductor device, which comprises transferring. 16. Manufacturing of a semiconductor device according to claim 2.
A method of connecting the bump electrode to a pad electrode of the semiconductor device
In the process, the protruding electrode is attached to the crystalline substrate.
After transfer to the pad electrode of the body device, the surface of the protruding electrode
A semiconductor having a step of forming a gold layer on
Device manufacturing method. 17. Manufacturing of a semiconductor device according to claim 5.
A method of connecting the bump electrode to a pad electrode of the semiconductor device
In the process, the protruding electrode is attached to the crystalline substrate.
After transfer to the pad electrode of the body device, the surface of the protruding electrode
A semiconductor having a step of forming a gold layer on
Device manufacturing method. 18. Manufacturing of a semiconductor device according to claim 2.
A method of connecting the bump electrode to a pad electrode of the semiconductor device
In the process, the protruding electrode and the pad electrode of the semiconductor device are heated to 200 ° C.
From 300 to 300 ℃ by thermocompression bonding, and the protrusions through the conductive particles present in the anisotropic conductive sheet.
The electrode and the pad electrode of the semiconductor device are electrically connected
A method for manufacturing a semiconductor device, comprising: 19. Manufacturing of a semiconductor device according to claim 2.
A method of connecting the bump electrode to a pad electrode of the semiconductor device
In the process, a gold bump formed on the pad electrode of the semiconductor device
And the protruding electrodes are thermocompression bonded to form an alloy and connected.
A method for manufacturing a featured semiconductor device. 20. Manufacturing of a semiconductor device according to claim 2.
A method of connecting the bump electrode to a pad electrode of the semiconductor device
In the step, the Ni layer formed on the pad electrode of the semiconductor device and the
The metal layer and the protruding electrode are thermocompression bonded and alloyed for connection.
A method for manufacturing a semiconductor device, comprising: 21. A method of manufacturing a semiconductor device, which comprises a step of forming a protruding electrode of the semiconductor device , and the step of forming the protruding electrode.
The step of connecting the electrode and the pad electrode of the semiconductor device
And the step of forming the protruding electrode comprises forming the first acid formed on the surface of the crystalline substrate.
Etching the oxide film to form a first pattern with openings at the positions corresponding to the pyramidal holes.
A step of forming a turn, and using the first pattern as a mask,
A step of forming a hole, a step of removing the first oxide film, and a step of newly forming a second oxide film in the pyramid-shaped hole
And on the side of the pyramid-shaped hole on the crystalline substrate
A step of forming a plating power supply film (Cr / Ni) and a second step of not covering the pyramidal hole with an organic material.
A step of forming a pattern on the substrate having crystallinity, and using the plating feed film , forming a metal layer on the plating feed film.
There are steps of plating to fill the pyramidal holes, a step of forming a gold plating layer on the metal layer , and a step of removing the second pattern which is the organic material.
A method for manufacturing a semiconductor device, comprising: 22. A semiconductor chip and an array on the semiconductor chip.
The arrayed pad electrodes and the semiconductor chip are exposed to expose the arrayed pad electrodes.
And a plurality of protective films for connecting the semiconductor chip and the wiring board.
Projection electrodes, the plurality of projection electrodes, and the arranged pads
An anisotropic conductive sheet for conductively connecting the electrodes,
However , the plurality of protruding electrodes are formed by anisotropically forming a crystalline base material.
Plating the power supply film in the hole formed by
Is formed into a pyramid shape by removing
A semiconductor device characterized by the above. 23. A semiconductor chip and an array on the semiconductor chip.
The arrayed pad electrodes and the semiconductor chip are exposed to expose the arrayed pad electrodes.
And a plurality of protective layers that are electrically connected to the arranged pad electrodes.
A plurality of protruding electrodes, and the plurality of protruding electrodes are formed by using a crystalline substrate with anisotropic
Plating the power supply film in the hole formed by
Is formed into a pyramid shape by removing
The plurality of protruding electrodes and the arrayed pad electrodes are
Characterized by being connected by metal bonding by crimping
Semiconductor device. 24. The semiconductor device according to claim 22 or 23.
And the protruding electrode is one having Ni.
Semiconductor device.