JP2613224B2 - Gold fine wire material - Google Patents
Gold fine wire materialInfo
- Publication number
- JP2613224B2 JP2613224B2 JP62245254A JP24525487A JP2613224B2 JP 2613224 B2 JP2613224 B2 JP 2613224B2 JP 62245254 A JP62245254 A JP 62245254A JP 24525487 A JP24525487 A JP 24525487A JP 2613224 B2 JP2613224 B2 JP 2613224B2
- Authority
- JP
- Japan
- Prior art keywords
- wire
- gold
- ultrafine
- purity
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/432—Mechanical processes
- H01L2224/4321—Pulling
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/0102—Calcium [Ca]
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- H01L2924/01022—Titanium [Ti]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01028—Nickel [Ni]
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- H01L2924/01039—Yttrium [Y]
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- H01L2924/0104—Zirconium [Zr]
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- H01L2924/01044—Ruthenium [Ru]
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- H01L2924/01046—Palladium [Pd]
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- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01076—Osmium [Os]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01077—Iridium [Ir]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials For Medical Uses (AREA)
- Conductive Materials (AREA)
Description
【発明の詳細な説明】 (産業上の利用分野) 本発明は、感熱素子、ガス感知などの各種センサ、生
体電極などの医療器に用いる金極細線をつくる為の材料
に関するものである。Description: TECHNICAL FIELD The present invention relates to a material for producing a fine gold wire used for a medical device such as a thermosensitive element, various sensors such as gas sensing, and a biological electrode.
(従来の技術とその問題点) 上記用途の金極細線は、感応性の点から、その線径は
数μmという極めて細いものが要求されている。(Conventional technology and its problems) From the point of sensitivity, the ultrafine gold wire for the above application is required to have a very thin wire diameter of several μm.
従来、ダイス引きによる伸線加工を行っていたが、高
純度(99.99重量%以上)の金線である為、引張り強さ
が弱く、機械的特性に劣り伸線加工中に断線してしまう
という問題点があった。Conventionally, wire drawing was performed by die drawing, but since it is a high-purity (99.99% by weight or more) gold wire, its tensile strength is weak, its mechanical properties are poor, and it is likely that it will break during wire drawing. There was a problem.
(発明の目的) 本発明は、上記問題点を解決すべくなされたものであ
り、高純度の金の極細線としての電気抵抗や伝導度等の
金極細線としての性能、機能を保持しながら機械的特性
を向上させ、伸線加工中に断線することのない金細線用
材料を提供することを目的とするものである。(Object of the Invention) The present invention has been made in order to solve the above-mentioned problems, and while maintaining the performance and function as an ultrafine gold wire such as electric resistance and conductivity as a high purity gold ultrafine wire, is provided. It is an object of the present invention to provide a material for a fine gold wire which has improved mechanical properties and does not break during wire drawing.
(問題点を解決するための手段) 上記問題点を解決するための本発明の金極細線用材料
は、Pd、Ru、IrおよびPtの少なくとも1種を合計で500
〜3000ppm、および残部が99.99重量%以上の純度のAuか
らなる組成を有する金極細線用材料であって、99.99重
量%以上の純度の金の極細線としての電気抵抗を保持
し、かつ、金極細線の焼鈍時のビッカース硬さが50HV以
下であることを特徴とする金極細線用材料である。(Means for Solving the Problems) The material for a fine gold wire of the present invention for solving the above problems comprises at least one of Pd, Ru, Ir and Pt in a total amount of 500.
A material for ultrafine gold wires having a composition of not more than 3000 ppm and a balance of Au having a purity of 99.99% by weight or more, which retains electric resistance as a fine wire of gold having a purity of 99.99% by weight or more, Vickers hardness of an ultrafine wire during annealing is 50 HV or less.
本発明の金極細線用材料において、上記金属を合計で
500〜3000ppm添加しても金極細線の焼鈍時の機械的特性
および電気抵抗、伝導度等の金極細線としての機能、性
能は添加前の高純度の金の極細線の性質を示す。これは
いずれの元素もAuとなじみのよい白金族元素で、しか
も、焼鈍時のビッカース硬さが高純度金線と同様の50HV
以下であるからであり、添加元素の合金化硬化や線引加
工硬化を示さない範囲であるからである。微量であるが
ため添加元素間による作用効果の相違は見られない。In the gold ultrafine wire material of the present invention, the above metals are
Even when 500 to 3000 ppm is added, the mechanical properties and the electrical resistance and conductivity of the ultrafine gold wire during annealing, as well as the function and performance of the ultrafine gold wire show the properties of the high-purity ultrafine gold wire before addition. This is a platinum group element that is familiar with Au, and the Vickers hardness during annealing is the same as that of high-purity gold wire.
This is because it is within the range that does not show alloying hardening or drawing hardening of the added element. Since the amount is small, no difference in the effect between the added elements is observed.
本発明の金極細線用材料において、Au中に、上記金属
の少なくとも1種を合計で500〜3000重量ppmを添加する
理由は、機械的特性を向上させ、伸線加工中の断線を無
くする為で、500重量ppm未満ではその効果が無く、3000
重量ppmを超えると純度が下がりすぎて、各種センサや
医療器に用いる金極細線としての性能、機能(例えば電
気抵抗、伝導度等)が不十分なものとなるものである。In the material for ultrafine gold wires of the present invention, the reason why a total of 500 to 3000 ppm by weight of at least one of the above metals is added to Au is to improve mechanical properties and eliminate breakage during wire drawing. Therefore, less than 500 ppm by weight has no effect,
If the weight ppm is exceeded, the purity will be too low, and the performance and function (for example, electric resistance, conductivity, etc.) of the ultrafine gold wire used for various sensors and medical instruments will be insufficient.
(作用) 上記本発明の金極細線用材料は、上記金属の微量添加
によって結晶組織が微細となって機械的特性が向上す
る。さらに本発明の金極細線用材料は焼なました際、高
純度金と同様硬さは低くなるが、高純度金のように結晶
粒が粗大になるようなことは無く、上記金属の微量添加
によって核の発生する数が多くなって結晶粒が微細とな
る。(Function) In the above-mentioned material for ultrafine gold wires of the present invention, the crystal structure becomes fine due to the addition of a small amount of the metal, and the mechanical properties are improved. Furthermore, when the material for ultrafine gold wires of the present invention is annealed, the hardness becomes low similarly to high-purity gold, but the crystal grains do not become coarse unlike high-purity gold, The addition increases the number of nuclei generated and makes the crystal grains fine.
従って、断線の無い機械的特性に優れた金極細線が得
られる。Accordingly, an ultrafine gold wire having excellent mechanical properties without disconnection can be obtained.
(実施例) 本発明の金極細線用材料の具体的な実施例を従来例と
共に説明する。(Examples) Specific examples of the material for a fine gold wire of the present invention will be described together with a conventional example.
高純度金(99.99重量%以上)に下記の表の左欄に示
す成分組成を添加した実施例1〜4の材料を溶解し、縦
20mm、横20mm、長さ200mmのインゴットを作成し、これ
を溝ロール加工にて縦5mm、横5mmの条材とした。次いで
700℃、30分熱処理を行い、然る後ダイス引きにて伸線
加工し、線径10μmの極細線を得た。The materials of Examples 1 to 4 in which the component compositions shown in the left column of the following table were added to high purity gold (99.99% by weight or more) were dissolved,
An ingot having a length of 20 mm, a width of 20 mm, and a length of 200 mm was prepared, and was formed into a 5 mm long and 5 mm wide strip by groove roll processing. Then
Heat treatment was performed at 700 ° C. for 30 minutes, and then wire drawing was performed by die drawing to obtain a fine wire having a wire diameter of 10 μm.
一方、従来例として高純度金(99.99重量%以上)を
溶解し、上記と同様の方法により線径10μmの極細線を
得た。On the other hand, as a conventional example, high-purity gold (99.99% by weight or more) was dissolved, and an ultrafine wire having a wire diameter of 10 μm was obtained in the same manner as described above.
然してこれら実施例1〜4及び従来例について伸線加
工中の切断の有無及び機械的特性を調べた処、下記の表
の右欄に示すような結果を得た。However, when the presence or absence of cutting during wire drawing and the mechanical properties of these Examples 1 to 4 and the conventional example were examined, the results shown in the right column of the following table were obtained.
上記の表で明らかなように実施例1〜4の極細線は、
従来例の極細線のように伸線加工中に切断することが無
く、機械的特性に優れていることが判る。 As is clear from the above table, the fine lines of Examples 1 to 4 are
It can be seen that there is no cutting during wire drawing as in the case of the ultrafine wire of the conventional example, and the mechanical properties are excellent.
(発明の効果) 以上詳記した通り本発明の金極細線用材料によれば、
伸線加工中に切断することが無く、引張り強さが高く、
伸びが大きくて機械的特性に優れしかも金の純度をあま
り下げないで各種センサー用、医療器用の金極細線を得
ることができるという効果がある。(Effect of the Invention) As described above in detail, according to the material for a fine gold wire of the present invention,
No cutting during wire drawing, high tensile strength,
There is an effect that it is possible to obtain a gold ultrafine wire for various sensors and medical devices without a great decrease in the purity of gold, having a large elongation and excellent mechanical properties.
Claims (1)
計で500〜3000ppm、および残部が99.99重量%以上のAu
からなる組成を有することを特徴とする金極細線用材料
であって、99.99重量%以上の純度の金の極細線として
の電気抵抗を保持し、かつ、金極細線の焼鈍時のビッカ
ース硬さが50HV以下であることを特徴とする金極細線用
材料。(1) Au containing at least one of Pd, Ru, Ir and Pt in a total amount of 500 to 3,000 ppm, with the balance being 99.99% by weight or more.
A material for ultrafine gold wires, characterized by having a composition consisting of: having an electric resistance as an ultrafine gold wire having a purity of 99.99% by weight or more, and a Vickers hardness during annealing of the ultrafine gold wire Is not more than 50 HV.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62245254A JP2613224B2 (en) | 1987-09-29 | 1987-09-29 | Gold fine wire material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62245254A JP2613224B2 (en) | 1987-09-29 | 1987-09-29 | Gold fine wire material |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6487734A JPS6487734A (en) | 1989-03-31 |
JP2613224B2 true JP2613224B2 (en) | 1997-05-21 |
Family
ID=17130944
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62245254A Expired - Lifetime JP2613224B2 (en) | 1987-09-29 | 1987-09-29 | Gold fine wire material |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2613224B2 (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02205641A (en) * | 1989-01-31 | 1990-08-15 | Tatsuta Electric Wire & Cable Co Ltd | Gold alloy thin wire for bonding |
JP2779683B2 (en) * | 1990-03-13 | 1998-07-23 | 新日本製鐵株式会社 | Bonding wire for semiconductor device |
JPH0436430A (en) * | 1990-05-31 | 1992-02-06 | Sumitomo Metal Mining Co Ltd | Bonding wire |
JP2780611B2 (en) * | 1993-09-06 | 1998-07-30 | 三菱マテリアル株式会社 | Gold decorative materials hardened by alloying small amounts of components |
DE19753055B4 (en) * | 1997-11-29 | 2005-09-15 | W.C. Heraeus Gmbh | Fine wire of a gold alloy, process for its preparation and its use |
AT407830B (en) * | 1999-09-10 | 2001-06-25 | Degussa Huels Cee Gmbh | HIGH GOLDEN YELLOW DENTAL ALLOY |
JP4130843B1 (en) * | 2007-04-17 | 2008-08-06 | 田中電子工業株式会社 | High reliability gold alloy bonding wire and semiconductor device |
US20120312428A1 (en) | 2011-06-10 | 2012-12-13 | Tanaka Denshi Kogyo K.K. | High strength and high elongation ratio of au alloy bonding wire |
JP6811466B1 (en) * | 2019-09-26 | 2021-01-13 | 田中貴金属工業株式会社 | Medical Au-Pt-Pd alloy |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6026822B2 (en) * | 1981-07-17 | 1985-06-26 | 三菱マテリアル株式会社 | High tensile strength Au alloy thin wire |
JPS6179741A (en) * | 1984-09-27 | 1986-04-23 | Sumitomo Metal Mining Co Ltd | Bonding wire |
JPS61110735A (en) * | 1984-10-31 | 1986-05-29 | Tatsuta Electric Wire & Cable Co Ltd | Cold alloy having superior heat resistance |
JPS61163226A (en) * | 1985-01-09 | 1986-07-23 | Tanaka Denshi Kogyo Kk | Bonding gold wire for semiconductor device |
JPS62228440A (en) * | 1986-03-28 | 1987-10-07 | Matsuda Kikinzoku Kogyo Kk | Gold wire for semiconductor device bonding |
JPS63145729A (en) * | 1986-03-28 | 1988-06-17 | Nittetsu Micro Metal:Kk | Gold wire for bonding semiconductor device |
-
1987
- 1987-09-29 JP JP62245254A patent/JP2613224B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS6487734A (en) | 1989-03-31 |
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