JP2016103524A - 導電性フィルム状接着剤、フィルム状接着剤付きダイシングテープ及び半導体装置の製造方法 - Google Patents
導電性フィルム状接着剤、フィルム状接着剤付きダイシングテープ及び半導体装置の製造方法 Download PDFInfo
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- JP2016103524A JP2016103524A JP2014240028A JP2014240028A JP2016103524A JP 2016103524 A JP2016103524 A JP 2016103524A JP 2014240028 A JP2014240028 A JP 2014240028A JP 2014240028 A JP2014240028 A JP 2014240028A JP 2016103524 A JP2016103524 A JP 2016103524A
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- film adhesive
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
Description
図1に示すように、フィルム状接着剤3はフィルム状をなす。フィルム状接着剤3は導電性及び熱硬化性を備える。
なお、酸価は、JIS K 0070−1992に規定される中和滴定法で測定できる。
本明細書において、25℃において液状とは、25℃において粘度が5000Pa・s未満であることをいう。一方、25℃において固形とは、25℃において粘度が5000Pa・s以上であることをいう。粘度は、Thermo Scientific社製の型番HAAKE Roto VISCO1を用いて測定できる。
エポキシ樹脂のエポキシ当量は、JIS K 7236−2009に規定された方法で測定できる。
図2に示すように、フィルム状接着剤付きダイシングテープ10は、ダイシングテープ1、及びダイシングテープ1上に配置されたフィルム状接着剤3を備える。ダイシングテープ1は、基材11及び基材11上に配置された粘着剤層12を備える。フィルム状接着剤3は粘着剤層12上に配置されている。
半導体装置の製造方法について説明する。
熱可塑性樹脂:ナガセケムテックス(株)製のテイサンレジン SG−70L(カルボキシル基及びヒドロキシル基を備えるアクリル共重合体、Mw:90万、酸価:5mgKOH/g、ガラス転移温度:−13℃)
エポキシ樹脂1:日本化薬(株)製のEOCN−1020−4(エポキシ当量198g/eq.、25℃で固形のエポキシ樹脂)
エポキシ樹脂2:三菱化学(株)製のJER828(ビスフェノール型骨格を持つ25℃で液状のエポキシ樹脂、エポキン当量184g/eq.〜194g/eq.)
エポキシ樹脂3:DIC(株)製のEPICLON EXA−4816(エポキシ当量403g/eq.、25℃で液状のエポキシ樹脂)
フェノール樹脂1:明和化成(株)製のMEH−8000H(水酸基当量139g/eq.〜143g/eq.のフェノール樹脂)
フェノール樹脂2:明和化成(株)製のMEH−8005(水酸基当量133g/eq.〜138g/eq.のフェノール樹脂)
導電性粒子1:三井金属鉱業(株)製の1200YP(フレーク状銅粉、平均粒径3.5μm、アスペクト比:10)
導電性粒子2:三井金属鉱業(株)製の1400YP(フレーク状銅粉、平均粒径7.0μm、アスペクト比:25)
導電性粒子3:三井金属鉱業(株)製のSPH02J(銀微粒子の凝集体、凝集体の平均粒径1.8μm、不定形)
触媒:北興化学(株)製のTPP−K(テトラフェニルホスホニウムテトラフェニルボレート)
表1に記載の配合比に従い、表1に記載の各成分及び溶媒(メチルエチルケトン)を、ハイブリッドミキサー(キーエンス製 HM−500)の攪拌釜に入れ、攪拌モード、3分で攪拌・混合した。得られたワニスを、離型処理フィルム(三菱樹脂(株)製のMRA50)にダイコーターにて塗布した後、乾燥させて、厚み30μmのフィルム状接着剤を作製した。
乾燥機を用いて、フィルム状接着剤を140℃で1時間加熱し、次いで200℃で2時間加熱することにより硬化物を得た。
得られたフィルム状接着剤、硬化物について、以下の評価を行った。結果を表1に示す。
(株)アイフェイズ製のアイフェイズモバイルを用いた温度波熱分析法(TWA法)により、熱拡散率α(m2/s)を測定した。エスアイアイナノテクノロジー(株)製のDSC6220を用い、昇温速度10℃/min、温度20℃〜300℃の条件でDSC測定し、JISハンドブック(比熱容量測定方法K−7123 1987)に記載された方法で比熱容量Cp(J/g・℃)を求めた。比重を測定した。そして、下記式により熱伝導率を求めた。
図8に示すように、基板101及び基板101上に配置された、配線幅2mm、配線厚み10μmの銅配線102a、102b、102c、102dを有する評価基板100を準備した。銅配線102aと銅配線102bの間隔、銅配線102bと銅配線102cの間隔、銅配線102cと銅配線102dの間隔は15mmであった。フィルム状接着剤から10mm×50mm×30μmの試験フィルム200を切り出した。図9に示すように、70℃、0.5MPa、10mm/sで試験フィルム200を銅配線102a、102b、102c、102dに圧着し、試験基板300を作製した。試験基板300を窒素雰囲気中で140℃で1時間加熱し、次いで200℃で2時間加熱することにより試験フィルム200を硬化させた。ミリオームメーターを用いて、銅配線102aと銅配線102b間の抵抗値、銅配線102aと銅配線102c間の抵抗値、銅配線102aと銅配線102d間の抵抗値を測定した。各抵抗値から、銅配線102aと銅配線102b間のバルク抵抗値、銅配線102bと銅配線102c間のバルク抵抗値、銅配線102cと銅配線102d間のバルク抵抗値を算出した。さらに、3つのバルク抵抗値の平均値を算出した。そして、下記式により、電気抵抗率を算出した。
導電性粒子1〜3について、以下の評価を行った。
ガラス板上に配置された導電性粒子1〜3を140℃で1時間加熱し、次いで200℃で2時間加熱した。加熱前後において、導電性粒子1〜3を走査型電子顕微鏡(SEM)で観察した。導電性粒子3に関して、加熱前に焼結(融着現象)を確認しなかったが、加熱後に焼結を確認した。一方、導電性粒子1〜2に関して、加熱前後に焼結を確認しなかった。
1 ダイシングテープ
11 基材
12 粘着剤層
3 フィルム状接着剤
4 半導体ウエハ
5 半導体チップ
41 ダイボンド用チップ
6 被着体
61 半導体チップ付き被着体
7 ボンディングワイヤー
8 封止樹脂
101 基板
102a、102b、102c、102d 銅配線
200 試験フィルム
300 試験基板
505 半導体チップ
541 ダイボンド用チップ
506 被着体
Claims (10)
- 加熱により硬化させて得られる硬化物の第1熱伝導率の、前記加熱前の第2熱伝導率に対する比の値(前記第1熱伝導率/前記第2熱伝導率)は2.0以上である導電性フィルム状接着剤。
- 前記第1熱伝導率は1.7W/m・K以上である請求項1に記載の導電性フィルム状接着剤。
- 導電性粒子を含み、
前記導電性粒子が、フレーク状金属粒子及び200℃で少なくとも一部が焼結する焼結性金属粒子を含む請求項1又は2に記載の導電性フィルム状接着剤。 - 前記導電性粒子100重量%中の前記焼結性金属粒子の含有量は5重量%〜50重量%である請求項1〜3のいずれかに記載の導電性フィルム状接着剤。
- 樹脂成分を含み、
前記樹脂成分が熱可塑性樹脂、熱硬化性樹脂を含む請求項1〜4のいずれかに記載の導電性フィルム状接着剤。 - 硬化剤をさらに含む請求項5に記載の導電性フィルム状接着剤。
- ダイボンド用の請求項1〜6のいずれかに記載の導電性フィルム状接着剤
- ダイシングテープと
前記ダイシングテープ上に配置された請求項1〜7のいずれかに記載の導電性フィルム状接着剤とを備えるフィルム状接着剤付きダイシングテープ。 - 前記ダイシングテープが、基材及び前記基材上に配置された粘着剤層を備える請求項8に記載のフィルム状接着剤付きダイシングテープ。
- 請求項1〜7のいずれかに記載の導電性フィルム状接着剤及び前記導電性フィルム状接着剤上に配置された半導体チップを備えるダイボンド用チップを、被着体に圧着する工程を含む半導体装置の製造方法。
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WO2023190950A1 (ja) * | 2022-03-31 | 2023-10-05 | リンテック株式会社 | 積層体の製造方法 |
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CN105647405A (zh) | 2016-06-08 |
KR20160063985A (ko) | 2016-06-07 |
CN105647405B (zh) | 2021-08-24 |
TWI714540B (zh) | 2021-01-01 |
KR102321864B1 (ko) | 2021-11-05 |
JP6396189B2 (ja) | 2018-09-26 |
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