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JP2011151112A - Light emitting device and method for manufacturing the same - Google Patents

Light emitting device and method for manufacturing the same Download PDF

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Publication number
JP2011151112A
JP2011151112A JP2010009891A JP2010009891A JP2011151112A JP 2011151112 A JP2011151112 A JP 2011151112A JP 2010009891 A JP2010009891 A JP 2010009891A JP 2010009891 A JP2010009891 A JP 2010009891A JP 2011151112 A JP2011151112 A JP 2011151112A
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led chip
chip
emitting device
aluminum
light emitting
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Kentaro Hayashi
堅太郎 林
Teruo Kamei
照夫 亀井
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Seiwa Electric Mfg Co Ltd
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Seiwa Electric Mfg Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting device efficiently extracting light emitted from an LED chip while improving heat dissipation characteristics, and a method for manufacturing the light emitting device. <P>SOLUTION: A base substrate 10 is, for example, a glass epoxy substrate such as FR-4, laminated with a glass cloth base material 1, an insulating layer 2 and a copper foil 3. A circular fitting hole 31 is formed at a predetermined position of the base substrate 10. A disc-like aluminum chip 4 is fitted in the fitting hole 31. An LED chip 20 is directly mounted on a surface of the aluminum chip 4. Wire bonding using gold wire 21 is performed between an electrode of the LED chip 20 and the copper foil 3 subjected to gold plating 5. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は、ＬＥＤチップを備えた発光装置及び該発光装置の製造方法に関する。   The present invention relates to a light emitting device including an LED chip and a method for manufacturing the light emitting device.

従来、光源として用いられてきた蛍光灯又は白熱灯などに比べて、省電力かつ長寿命であるという理由で、発光ダイオードが光源として注目を集めている。そして、道路灯等の照明器具、バックライト光源、イルミネーション光源、アミューズメント機器の装飾など、広い分野で発光ダイオードが使用されるようになった。   Conventionally, light-emitting diodes have attracted attention as light sources because they have lower power consumption and longer life than fluorescent lamps or incandescent lamps that have been used as light sources. Light emitting diodes have been used in a wide range of fields such as lighting equipment such as road lights, backlight light sources, illumination light sources, and decorations for amusement equipment.

このような発光ダイオードの構造は、例えば、アルミ基板又は銅基板上に絶縁層を形成し、絶縁層の表面には銅箔による回路パターンを形成してある。そして、電気的に絶縁された銅箔上にＬＥＤチップを配置し、ＬＥＤチップの電極と回路パターンとがワイヤにより電気的に接続されている。また、銅箔上には金メッキが施されている（特許文献１参照）。   In such a light emitting diode structure, for example, an insulating layer is formed on an aluminum substrate or a copper substrate, and a circuit pattern made of copper foil is formed on the surface of the insulating layer. Then, the LED chip is disposed on the electrically insulated copper foil, and the electrode of the LED chip and the circuit pattern are electrically connected by a wire. Moreover, gold plating is given on copper foil (refer patent document 1).

特開２００６−６６７８６号公報JP 2006-66786 A

しかしながら、特許文献１の発光ダイオードにあっては、金メッキが施された銅箔上にＬＥＤチップを配置しているものの、金メッキの反射率が低いため、ＬＥＤチップからの光の取り出し効率が悪いという問題がある。また、ＬＥＤチップの周囲は絶縁層で囲まれているので、一層光の取り出し効率が低下する。また、ＬＥＤチップで発生する熱により絶縁層が変色し一層反射率が低下するという問題がある。   However, in the light emitting diode of Patent Document 1, although the LED chip is disposed on the gold-plated copper foil, the efficiency of extracting light from the LED chip is poor because the reflectance of the gold plating is low. There's a problem. Moreover, since the periphery of the LED chip is surrounded by an insulating layer, the light extraction efficiency is further reduced. In addition, there is a problem that the insulating layer is discolored by heat generated in the LED chip and the reflectance is further lowered.

また、アルミ基板とＬＥＤチップとの間には絶縁層が存在し、絶縁層の熱伝導率は金属に比べて小さいため、ＬＥＤチップで発生する熱の放熱を一層良くし、さらに放熱特性の優れた発光装置が望まれていた。   In addition, there is an insulating layer between the aluminum substrate and the LED chip, and since the thermal conductivity of the insulating layer is smaller than that of metal, heat dissipation generated by the LED chip is further improved, and heat dissipation characteristics are excellent. A light emitting device was desired.

本発明は斯かる事情に鑑みてなされたものであり、放熱特性を向上しつつＬＥＤチップから発せられる光を効率的に取り出すことができる発光装置及び該発光装置の製造方法を提供することを目的とする。   The present invention has been made in view of such circumstances, and an object of the present invention is to provide a light emitting device that can efficiently extract light emitted from an LED chip while improving heat dissipation characteristics, and a method for manufacturing the light emitting device. And

第１発明に係る発光装置は、ＬＥＤチップを備えた発光装置において、開口部が形成された基板と、前記開口部に嵌合された金属板とを備え、前記ＬＥＤチップを前記金属板上に装着してあることを特徴とする。   A light emitting device according to a first aspect of the present invention is a light emitting device including an LED chip, comprising: a substrate having an opening formed thereon; and a metal plate fitted into the opening, wherein the LED chip is placed on the metal plate. It is mounted.

第２発明に係る発光装置は、第１発明において、前記金属板は、アルミニウム製であり、前記金属板の前記ＬＥＤチップを装着する面が光沢を有することを特徴とする。   A light emitting device according to a second invention is characterized in that, in the first invention, the metal plate is made of aluminum, and a surface of the metal plate on which the LED chip is mounted has a gloss.

第３発明に係る発光装置は、第１発明又は第２発明において、前記ＬＥＤチップの装着面よりも該ＬＥＤチップが装着される金属板の面が大きいことを特徴とする。   A light emitting device according to a third invention is characterized in that, in the first invention or the second invention, the surface of the metal plate on which the LED chip is mounted is larger than the mounting surface of the LED chip.

第４発明に係る発光装置の製造方法は、ＬＥＤチップを備えた発光装置の製造方法において、基板に開口部を形成するステップと、前記開口部に金属板を嵌合するステップと、前記ＬＥＤチップを前記金属板上に装着するステップとを含むことを特徴とする。   According to a fourth aspect of the present invention, there is provided a light emitting device manufacturing method comprising: a step of forming an opening in a substrate; a step of fitting a metal plate into the opening; and the LED chip. Mounting on the metal plate.

第１発明及び第４発明にあっては、開口部が形成された基板と、開口部に嵌合された金属板とを備え、ＬＥＤチップを金属板上に装着してある。ＬＥＤチップを金属板上に装着するには、例えば、透明ペースト等を用いることができる。ＬＥＤチップを金属板上に直接装着することにより、金属板を通じてＬＥＤチップで発生する熱を効率的に放熱することができる。また、絶縁層に比べて金属板の反射率が大きいため、ＬＥＤチップで発せられる光を金属板で反射させて、従来よりも光の取り出し効率を向上させることができる。   In the 1st invention and the 4th invention, the board | substrate with which the opening part was formed, and the metal plate fitted by the opening part were provided, and the LED chip was mounted | worn on the metal plate. In order to mount the LED chip on the metal plate, for example, a transparent paste or the like can be used. By directly mounting the LED chip on the metal plate, the heat generated by the LED chip can be efficiently radiated through the metal plate. Further, since the reflectance of the metal plate is larger than that of the insulating layer, the light emitted from the LED chip can be reflected by the metal plate, and the light extraction efficiency can be improved as compared with the conventional case.

第２発明にあっては、金属板は、アルミニウム製であり、ＬＥＤチップを装着する面が光沢を有する。金属板はアルミニウム又はアルミニウム合金でもよい。また、表面は素地でもよく、アルマイト処理を施してあってもよい。また、金属板の表面の光沢は、例えば、表面の粗さを０．０１μｍ〜０．０５μｍ程度とすることにより実現することができる。これにより、一層反射率を大きくすることができ、光の取り出し効率を向上させることができる。   In the second invention, the metal plate is made of aluminum, and the surface on which the LED chip is mounted has a gloss. The metal plate may be aluminum or an aluminum alloy. Further, the surface may be a base or anodized. Moreover, the glossiness of the surface of the metal plate can be realized, for example, by setting the surface roughness to about 0.01 μm to 0.05 μm. Thereby, the reflectance can be further increased and the light extraction efficiency can be improved.

第３発明にあっては、ＬＥＤチップの装着面よりもＬＥＤチップが装着される金属板の面が大きい。これにより、ＬＥＤチップの下面又は側面から発せられる光を金属板の表面で反射させてＬＥＤチップの発光面の方向（上方向）へ放射させることができ、光の取り出し効率を一層高めることができる。   In the third invention, the surface of the metal plate on which the LED chip is mounted is larger than the mounting surface of the LED chip. Thereby, the light emitted from the lower surface or the side surface of the LED chip can be reflected by the surface of the metal plate and radiated in the direction (upward direction) of the light emitting surface of the LED chip, and the light extraction efficiency can be further enhanced. .

本発明によれば、金属板を通じてＬＥＤチップで発生する熱を効率的に放熱することができる。また、ＬＥＤチップで発せられる光を金属板で反射させて、従来よりも光の取り出し効率を向上させることができる。   According to the present invention, heat generated in the LED chip can be efficiently radiated through the metal plate. Moreover, the light extraction efficiency can be improved as compared with the prior art by reflecting the light emitted from the LED chip with a metal plate.

本実施の形態に係る発光装置の構造の一例を示す断面図である。It is sectional drawing which shows an example of the structure of the light-emitting device which concerns on this Embodiment. 本実施の形態の発光装置の製造方法の一例を示す説明図である。It is explanatory drawing which shows an example of the manufacturing method of the light-emitting device of this Embodiment. 本実施の形態の発光装置の製造方法の一例を示す説明図である。It is explanatory drawing which shows an example of the manufacturing method of the light-emitting device of this Embodiment.

以下、本発明をその実施の形態を示す図面に基づいて説明する。図１は本実施の形態に係る発光装置１００の構造の一例を示す断面図である。図１において、１０はベース基板である。ベース基板１０は、例えば、ＦＲ−４などのガラスエポキシ基板であり、ガラス布基材１、絶縁層２及び銅箔３が積層されている。銅箔３は、回路パターンを形成している。ベース基板１０は、市販品として流通しているものであり、比較的安価に入手可能である。また、ベース基板１０としては、ガラスエポキシ基板（ＦＲ−４）の他に、ガラス布基材１に代えてアルミ板１を用いたものを使用することができるが、ガラス布基材１を備えたガラスエポキシ基板を使用することにより、軽量化を図ることができるという利点がある。   Hereinafter, the present invention will be described with reference to the drawings illustrating embodiments thereof. FIG. 1 is a cross-sectional view showing an example of the structure of a light emitting device 100 according to this embodiment. In FIG. 1, 10 is a base substrate. The base substrate 10 is, for example, a glass epoxy substrate such as FR-4, and the glass cloth base 1, the insulating layer 2, and the copper foil 3 are laminated. The copper foil 3 forms a circuit pattern. The base substrate 10 is distributed as a commercial product and is available at a relatively low cost. Moreover, as the base substrate 10, in addition to the glass epoxy substrate (FR-4), a substrate using the aluminum plate 1 instead of the glass cloth substrate 1 can be used. By using a glass epoxy substrate, there is an advantage that the weight can be reduced.

ベース基板１０の所定位置には、例えば、直径が３ｍｍ〜５ｍｍ程度の円形状の開口部としての嵌合孔３１を形成してある。嵌合孔３１は、ベース基板１０を所定の治具を用いた穴あけ工程で形成することができる。そして、嵌合孔３１には、嵌合孔３１の径に合わせて円板状の金属板としてのアルミチップ４を嵌合している。アルミチップ４の嵌合は、例えば、圧入処理でもよく、あるいは、接着剤等による接着処理でもよい。   For example, a fitting hole 31 as a circular opening having a diameter of about 3 mm to 5 mm is formed at a predetermined position of the base substrate 10. The fitting hole 31 can be formed in the drilling process using a predetermined jig for the base substrate 10. And the aluminum chip 4 as a disk-shaped metal plate is fitted to the fitting hole 31 according to the diameter of the fitting hole 31. The fitting of the aluminum chip 4 may be, for example, a press-fitting process or an adhesive process using an adhesive or the like.

なお、アルミチップ４に代えて、銅製のものを使用すれば、放熱特性は従来のものより向上し、また、ＬＥＤチップ（ベアチップ）２０の周辺が絶縁層から銅板になることで光の取り出し効率も従来のものよりも改善する。しかし、アルミチップ４を用いることで、銅箔に金メッキがされた場合の反射率（約５０％）に比べて反射率が９０％程度に向上するので、一層光の取り出し効率を向上させることができ、アルミチップ４を用いる方がよい。特に、ＬＥＤチップ２０を装着する基板は、他の電気部品（例えば、ＦＥＴなど）と異なり、放熱特性だけを向上させればよいというものではなく、放熱特性の向上と同時に光の取り出し効率を高める必要性があることから、銅板ではなくアルミ板（アルミチップ）を用いることが好ましい。   If a copper-made one is used in place of the aluminum chip 4, the heat dissipation characteristics are improved compared to the conventional one, and the LED chip (bare chip) 20 has a copper plate from the insulating layer so that the light extraction efficiency is improved. Even better than the conventional one. However, by using the aluminum chip 4, the reflectance is improved to about 90% compared to the reflectance (about 50%) when the copper foil is plated with gold, so that the light extraction efficiency can be further improved. It is better to use the aluminum chip 4. In particular, unlike other electrical components (for example, FETs), the substrate on which the LED chip 20 is mounted does not have to improve only the heat dissipation characteristics, but improves the light extraction efficiency and the light extraction efficiency. Because of the necessity, it is preferable to use an aluminum plate (aluminum chip) instead of a copper plate.

アルミチップ４は、直径が３ｍｍ〜５ｍｍ程度であって、アルミニウム合金でもよく、素地でもよく、あるいはアルマイト処理を施したものでもよい。また、アルミチップ４のＬＥＤチップ２０が装着される側の表面は光沢を有する。アルミチップ４の表面の光沢は、例えば、表面粗さが０．０１μｍ〜０．０５μｍ程度、正反射率（縦横方向含む）が６４％〜８６％程度、拡散反射率（縦横方向含む）が１．０％〜３０％程度とすることができる。なお、アルミチップ４の表面を高光沢にするには、表面粗さが０．０１μｍ〜０．０２μｍ程度、正反射率（縦横方向含む）が８２％〜８６％程度、拡散反射率（縦横方向含む）が１．０％〜１５％程度が好ましい。なお、アルミチップ４の下面（ＬＥＤチップ２０が装着されない面）は、光沢を有する処理は不要である。なお、アルミチップ４は、高光沢アルミニウム板を円形状に打ち抜いて製造することができる。   The aluminum chip 4 has a diameter of about 3 mm to 5 mm, and may be an aluminum alloy, a base, or alumite-treated. Further, the surface of the aluminum chip 4 on the side where the LED chip 20 is mounted is glossy. As for the gloss of the surface of the aluminum chip 4, for example, the surface roughness is about 0.01 μm to 0.05 μm, the regular reflectance (including the vertical and horizontal directions) is about 64% to 86%, and the diffuse reflectance (including the vertical and horizontal directions) is 1. It can be about 0.0% to 30%. In addition, in order to make the surface of the aluminum chip 4 highly glossy, the surface roughness is about 0.01 μm to 0.02 μm, the regular reflectance (including the vertical and horizontal directions) is about 82% to 86%, and the diffuse reflectance (the vertical and horizontal directions). About 1.0% to 15%. Note that the lower surface of the aluminum chip 4 (the surface on which the LED chip 20 is not mounted) does not require glossy processing. The aluminum chip 4 can be manufactured by punching a high-gloss aluminum plate into a circular shape.

回路パターンとしての銅箔３の表面（上面）には、金メッキ５を施してある。アルミチップ４の表面には、直接ＬＥＤチップ２０を装着している。ＬＥＤチップ２０の装着には、例えば、透明ペーストを用いることができる。また、ＬＥＤチップ２０の高さ寸法は、例えば、０．１ｍｍ程度である。また、ＬＥＤチップ２０の装着面よりもＬＥＤチップ２０が装着されるアルミチップ４の表面が大きい。   Gold plating 5 is applied to the surface (upper surface) of the copper foil 3 as a circuit pattern. The LED chip 20 is directly mounted on the surface of the aluminum chip 4. For mounting the LED chip 20, for example, a transparent paste can be used. The height dimension of the LED chip 20 is, for example, about 0.1 mm. Further, the surface of the aluminum chip 4 on which the LED chip 20 is mounted is larger than the mounting surface of the LED chip 20.

ＬＥＤチップ２０の電極と金メッキ５を施した銅箔３との間は、金線２１によりワイヤボンディングしてある。金メッキ５を施した銅箔３のワイヤボンディングされた箇所を除く部分にはレジスト６を形成してある。レジスト６上には、ＬＥＤチップ２０を囲むように半透明シリコン等のシリコンエンキャプ材７を周設してある。シリコンエンキャプ材７で囲まれる領域には、透明シリコン等のシリコンポッティング材９を充填してある。また、シリコンエンキャプ材７の上部には、蛍光体シート８を接着してある。蛍光体シート８により、例えば、白色光を発生する白色発光ダイオードとしての機能を実現することができる。なお、ＬＥＤチップ２０の発光波長、あるいは蛍光体シート８に含まれる蛍光体を変えることにより、白色に限定されることなく、所望の波長ピークを有する光を発光させることができる。また、蛍光体シート８に代えて、蛍光体を含有した透明樹脂をＬＥＤチップ２０の回りに充填する構成とすることもできる。   Between the electrode of the LED chip 20 and the copper foil 3 to which the gold plating 5 is applied, wire bonding is performed by a gold wire 21. A resist 6 is formed on a portion of the copper foil 3 to which the gold plating 5 is applied, except for the portion where wire bonding is performed. A silicon encapsulant 7 such as translucent silicon is provided on the resist 6 so as to surround the LED chip 20. A region surrounded by the silicon encapsulant 7 is filled with a silicon potting material 9 such as transparent silicon. A phosphor sheet 8 is bonded to the upper part of the silicon encapsulant 7. With the phosphor sheet 8, for example, a function as a white light emitting diode that generates white light can be realized. In addition, the light which has a desired wavelength peak can be light-emitted by changing the light emission wavelength of the LED chip 20, or the fluorescent substance contained in the fluorescent substance sheet 8, without being limited to white. Moreover, it can replace with the fluorescent substance sheet 8, and can also be set as the structure filled with the transparent resin containing fluorescent substance around the LED chip 20. FIG.

上述のとおり、嵌合孔３１が形成されたベース基板１０と、嵌合孔３１に嵌合されたアルミチップ４とを備え、ＬＥＤチップ２０をアルミチップ４上に直接装着してある。これにより、アルミチップ４を通じてＬＥＤチップ２０で発生する熱を効率的に放熱することができる。また、ＬＥＤチップ２０の周囲が絶縁層である場合に比べて、アルミチップ４の反射率が大きいため、ＬＥＤチップ２０で発せられる光をアルミチップ４の表面で反射させて、従来よりも光の取り出し効率を向上させることができる。   As described above, the base substrate 10 in which the fitting hole 31 is formed and the aluminum chip 4 fitted in the fitting hole 31 are provided, and the LED chip 20 is directly mounted on the aluminum chip 4. Thereby, the heat generated in the LED chip 20 can be efficiently radiated through the aluminum chip 4. In addition, since the reflectance of the aluminum chip 4 is larger than that in the case where the periphery of the LED chip 20 is an insulating layer, the light emitted from the LED chip 20 is reflected on the surface of the aluminum chip 4 so that the light is emitted more than in the past. The extraction efficiency can be improved.

また、アルミチップ４は、ＬＥＤチップ２０を装着する面が光沢を有する。これにより、ＬＥＤチップ２０を金メッキが施された銅箔上に装着する場合に比べて、アルミチップ４の反射率が大きいため（例えば、９０％程度）、ＬＥＤチップ２０で発せられる光をアルミチップ４の表面で反射させて、従来よりも光の取り出し効率を向上させることができる。   The aluminum chip 4 has a glossy surface on which the LED chip 20 is mounted. As a result, the reflectance of the aluminum chip 4 is higher than that when the LED chip 20 is mounted on a gold-plated copper foil (for example, about 90%), so that the light emitted by the LED chip 20 is aluminum chip. The light extraction efficiency can be improved as compared with the prior art.

また、ＬＥＤチップ２０の装着面よりもＬＥＤチップ２０が装着されるアルミチップ４の表面が大きい（面積が大きい）。これにより、ＬＥＤチップ２０の下面又は側面から発せられる光をアルミチップ４の表面で反射させてＬＥＤチップ２０の発光面の方向（上方向）へ放射させることができ、光の取り出し効率を一層高めることができる。   Further, the surface of the aluminum chip 4 on which the LED chip 20 is mounted is larger than the mounting surface of the LED chip 20 (the area is large). Thereby, the light emitted from the lower surface or the side surface of the LED chip 20 can be reflected by the surface of the aluminum chip 4 and radiated in the direction (upward direction) of the light emitting surface of the LED chip 20, thereby further improving the light extraction efficiency. be able to.

次に本発明に係る発光装置１００の製造方法について説明する。図２及び図３は本実施の形態の発光装置１００の製造方法の一例を示す説明図である。図２（ａ）に示すように、所要の寸法であって、ガラス布基材１、絶縁層２及び銅箔３が積層されたベース基板１０（例えば、ＦＲ―４など）を用意する。   Next, a method for manufacturing the light emitting device 100 according to the present invention will be described. 2 and 3 are explanatory views showing an example of a method for manufacturing the light emitting device 100 of the present embodiment. As shown in FIG. 2A, a base substrate 10 (for example, FR-4) having a required dimension and having a glass cloth base 1, an insulating layer 2, and a copper foil 3 laminated thereon is prepared.

次に、図２（ｂ）に示すように、ＬＥＤチップ２０を装着する装着面の周辺部３０の銅箔３、及び回路パターンとして不要な銅箔３を絶縁層２が露出するまでエッチングして除去する。   Next, as shown in FIG. 2B, the copper foil 3 in the peripheral portion 30 of the mounting surface on which the LED chip 20 is mounted and the copper foil 3 unnecessary as a circuit pattern are etched until the insulating layer 2 is exposed. Remove.

次に、図２（ｃ）に示すように、銅箔３の金線２１をワイヤボンディングする箇所には金メッキ５を施す。   Next, as shown in FIG.2 (c), the gold plating 5 is given to the location which wire-bonds the gold wire 21 of the copper foil 3. Next, as shown in FIG.

次に、図３（ｄ）に示すように、ＬＥＤチップ２０の装着面（実装した際の占有面）よりも面積の大きい嵌合孔３１を穴あけ工程で形成する。この場合、ガラス布基材１上の絶縁層２を適宜除去する。   Next, as shown in FIG. 3D, a fitting hole 31 having a larger area than the mounting surface (occupied surface when mounted) of the LED chip 20 is formed in the drilling step. In this case, the insulating layer 2 on the glass cloth substrate 1 is appropriately removed.

次に、図３（ｅ）に示すように、嵌合孔３１にアルミチップ４を嵌合させる。アルミチップ４の片面だけが高光沢である場合、高光沢の面を上方（ＬＥＤチップ２０を装着する側）にする。   Next, as shown in FIG. 3 (e), the aluminum chip 4 is fitted into the fitting hole 31. When only one surface of the aluminum chip 4 is highly glossy, the highly glossy surface is directed upward (side on which the LED chip 20 is mounted).

次に、図３（ｆ）に示すように、ワイヤボンディングする箇所以外の金メッキ５表面にレジスト６を形成する。そして、ＬＥＤチップ２０を所定の装着面に配置し、透明ペースト等によりアルミチップ４上に装着する。そして、ＬＥＤチップ２０の電極と金メッキ５を施した銅箔３との間を金線２１でワイヤボンディングする。   Next, as shown in FIG. 3F, a resist 6 is formed on the surface of the gold plating 5 other than the portion to be wire-bonded. Then, the LED chip 20 is placed on a predetermined mounting surface and mounted on the aluminum chip 4 with a transparent paste or the like. Then, the gold wire 21 is used for wire bonding between the electrode of the LED chip 20 and the copper foil 3 to which the gold plating 5 is applied.

その後、図示していないが、ＬＥＤチップ２０を囲むようにレジスト６上に、半透明シリコン等のシリコンエンキャプ材７を周設する。シリコンエンキャプ材７で囲まれる領域に、透明シリコン等のシリコンポッティング材９を充填する。そして、シリコンエンキャプ材７の上部に、蛍光体シート８を接着する。   Thereafter, although not shown, a silicon encapsulant 7 such as translucent silicon is provided on the resist 6 so as to surround the LED chip 20. A region surrounded by the silicon encapsulant 7 is filled with a silicon potting material 9 such as transparent silicon. Then, the phosphor sheet 8 is bonded to the upper part of the silicon encapsulant 7.

上述のとおり、本実施の形態の発光装置１００は、高光沢アルミニウム板を円形状（直径が３ｍｍ〜５ｍｍ程度）に打ち抜いて製造したアルミチップ４をＦＲ−４などのガラスエポキシ基板に圧入（又は挿入して接着）し、その光沢面上にＬＥＤチップ２０を装着する。これにより、ＬＥＤチップ２０からの発光を効率良く外部へ反射させると同時に、放熱経路を最短にして基板外（ＬＥＤチップ２０の直下方向）に素早く熱伝導させる、すなわち、ＬＥＤチップ２０の直下方向の熱伝導率に優れた構造とすることで、熱による発光強度減退を抑制することができる。   As described above, in the light emitting device 100 of the present embodiment, the aluminum chip 4 manufactured by punching a high-gloss aluminum plate into a circular shape (diameter of about 3 mm to 5 mm) is press-fitted into a glass epoxy substrate such as FR-4 (or The LED chip 20 is mounted on the glossy surface. As a result, the light emitted from the LED chip 20 is efficiently reflected to the outside, and at the same time, the heat dissipation path is made the shortest and the heat is quickly transferred to the outside of the substrate (directly below the LED chip 20). By making the structure excellent in thermal conductivity, it is possible to suppress the emission intensity decrease due to heat.

また、ＦＲ−４などのガラスエポキシ基板をベース基板として使用しつつ、ＬＥＤチップ２０からの発光効率を向上させるとともに放熱特性も向上させることができるという従来にはない利点を有する。そして、ベース基板は、安価で流通性の高い市販品を使用することができ、低コストの発光装置を実現することができる。また、メタルベース基板（例えば、アルミベース基板）を使用する場合に比べて軽量化を図ることもできる。   Moreover, while using glass epoxy substrates, such as FR-4, as a base substrate, it has the advantage which can improve the luminous efficiency from LED chip 20, and can also improve a thermal radiation characteristic. As the base substrate, a commercially available product that is inexpensive and highly circulated can be used, and a low-cost light-emitting device can be realized. Further, the weight can be reduced as compared with the case of using a metal base substrate (for example, an aluminum base substrate).

上述の実施の形態では、蛍光体シートを備える構成であったが、蛍光体シートを具備しなくてもよい。また、ＬＥＤチップを覆うシリコンポッティング材９は、蛍光体を含有してもよく、あるいは含有しなくてもよい。また、ＬＥＤチップ２０の発光色は、白色、青色、赤色、緑色など所望の発光色とすることができる。   In the above embodiment, the phosphor sheet is provided. However, the phosphor sheet may not be provided. Moreover, the silicon potting material 9 covering the LED chip may or may not contain a phosphor. Moreover, the luminescent color of LED chip 20 can be made into desired luminescent colors, such as white, blue, red, and green.

１ ガラス布基材
２ 絶縁層
３ 銅箔
４ アルミチップ（金属板）
５ 金メッキ
１０ ベース基板（基板）
２０ ＬＥＤチップ
３１ 嵌合孔（開口部） 1 Glass cloth base material 2 Insulating layer 3 Copper foil 4 Aluminum chip (metal plate)
5 Gold plating 10 Base substrate (substrate)
20 LED chip 31 Fitting hole (opening)

Claims (4)

ＬＥＤチップを備えた発光装置において、
開口部が形成された基板と、
前記開口部に嵌合された金属板と
を備え、
前記ＬＥＤチップを前記金属板上に装着してあることを特徴とする発光装置。 In a light emitting device including an LED chip,
A substrate having an opening formed thereon;
A metal plate fitted in the opening,
A light-emitting device, wherein the LED chip is mounted on the metal plate. 前記金属板は、アルミニウム製であり、
前記金属板の前記ＬＥＤチップを装着する面が光沢を有することを特徴とする請求項１に記載の発光装置。 The metal plate is made of aluminum,
The light emitting device according to claim 1, wherein a surface of the metal plate on which the LED chip is mounted has a gloss. 前記ＬＥＤチップの装着面よりも該ＬＥＤチップが装着される金属板の面が大きいことを特徴とする請求項１又は請求項２に記載の発光装置。   The light-emitting device according to claim 1 or 2, wherein a surface of the metal plate on which the LED chip is mounted is larger than a mounting surface of the LED chip. ＬＥＤチップを備えた発光装置の製造方法において、
基板に開口部を形成するステップと、
前記開口部に金属板を嵌合するステップと、
前記ＬＥＤチップを前記金属板上に装着するステップと
を含むことを特徴とする発光装置の製造方法。 In a method for manufacturing a light emitting device including an LED chip,
Forming an opening in the substrate;
Fitting a metal plate into the opening;
Mounting the LED chip on the metal plate. A method for manufacturing a light-emitting device.
JP2010009891A 2010-01-20 2010-01-20 Light emitting device and method for manufacturing the same Pending JP2011151112A (en)

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KR101348484B1 (en) 2012-10-04 2014-01-16 영남대학교 산학협력단 Led package and method for manufacturing the same
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