JP2007088450A5 - - Google Patents
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- JP2007088450A5 JP2007088450A5 JP2006229766A JP2006229766A JP2007088450A5 JP 2007088450 A5 JP2007088450 A5 JP 2007088450A5 JP 2006229766 A JP2006229766 A JP 2006229766A JP 2006229766 A JP2006229766 A JP 2006229766A JP 2007088450 A5 JP2007088450 A5 JP 2007088450A5
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- Prior art keywords
- layer
- forming
- wiring
- gettering
- photoelectric conversion
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- 230000015572 biosynthetic process Effects 0.000 claims 27
- 239000004065 semiconductor Substances 0.000 claims 25
- 238000005247 gettering Methods 0.000 claims 24
- 238000006243 chemical reaction Methods 0.000 claims 21
- 238000003384 imaging method Methods 0.000 claims 18
- 239000000758 substrate Substances 0.000 claims 17
- 238000004519 manufacturing process Methods 0.000 claims 10
- 230000002787 reinforcement Effects 0.000 claims 8
- 238000005530 etching Methods 0.000 claims 6
- 238000000034 method Methods 0.000 claims 5
- 230000003287 optical effect Effects 0.000 claims 2
Claims (20)
前記素子形成層と前記薄膜化用除去層との間にゲッタリング層を設けた、
ことを特徴とする半導体基板。 A semiconductor substrate having an element forming layer on which a device is formed, and a thinning removal layer that is laminated on one surface of the element forming layer and also serves as a reinforcement of the element forming layer;
A gettering layer was provided between the element formation layer and the thinning removal layer.
A semiconductor substrate characterized by the above.
前記素子形成層と前記薄膜化用除去層との間に設けられたゲッタリング層と、
前記素子形成層の他方の面に形成されたデバイスと、
前記素子形成層の他方の面に積層して設けられ前記デバイスの配線を行う配線層と、
を備えることを特徴とする半導体装置。 A semiconductor substrate having an element forming layer and a thinning removal layer that is laminated on one surface of the element forming layer and also serves as a reinforcement of the element forming layer;
A gettering layer provided between the element formation layer and the thinning removal layer;
A device formed on the other surface of the element formation layer;
A wiring layer that is provided on the other surface of the element formation layer and is used for wiring the device;
A semiconductor device comprising:
前記素子形成層と前記薄膜化用除去層との間にゲッタリング層を形成する工程と、
前記素子形成層にデバイスを形成する工程と、
前記素子形成層の他方の面に前記デバイスの配線を行う配線層を形成する工程と、
前記薄膜化用除去層を除去する工程と、
を備えることを特徴とする半導体装置の製造方法。 A manufacturing method of a semiconductor device using a semiconductor substrate having an element forming layer and a thinning removal layer that is laminated on one surface of the element forming layer and serves also as a reinforcement of the element forming layer,
Forming a gettering layer between the element formation layer and the thinning removal layer;
Forming a device in the element formation layer;
Forming a wiring layer for wiring the device on the other surface of the element formation layer;
Removing the thinning removal layer;
A method for manufacturing a semiconductor device, comprising:
前記素子形成層と前記薄膜化用除去層との間に設けられたゲッタリング層と、
前記ゲッタリング層と接する前記素子形成層の面に前記ゲッタリング層を覆うように設けられた正孔蓄積層と、
前記素子形成層の他方の面に形成された光電変換素子及び該光電変換素子で光電変換された信号電荷を電気信号に変換して出力する能動素子と、
前記素子形成層の他方の面に積層して設けられ前記能動素子の配線を行う配線層と、
を備えることを特徴とする固体撮像装置。 A semiconductor substrate having an element forming layer and a thinning removal layer that is laminated on one surface of the element forming layer and also serves as a reinforcement of the element forming layer;
A gettering layer provided between the element formation layer and the thinning removal layer;
A hole accumulating layer provided to cover the gettering layer on the surface of the element forming layer in contact with the gettering layer;
A photoelectric conversion element formed on the other surface of the element formation layer and an active element that converts a signal charge photoelectrically converted by the photoelectric conversion element into an electric signal and outputs the electric signal;
A wiring layer provided on the other surface of the element forming layer and provided for wiring of the active element;
A solid-state imaging device comprising:
前記素子形成層と前記薄膜化用除去層との間にゲッタリング層を形成する工程と、
前記ゲッタリング層と接する前記素子形成層の面に前記ゲッタリング層を覆うように正孔蓄積層を設ける工程と、
前記素子形成層に光電変換素子及び該光電変換素子で光電変換された信号電荷を電気信号に変換して出力する能動素子を形成する工程と、
前記能動素子が形成された前記素子形成層の他方の面に前記能動素子の配線を行う配線層を形成する工程と、
前記薄膜化用除去層を除去する工程と、
前記薄膜化用除去層が除去された後の前記ゲッタリング層の表面に前記光電変換素子への入射光を集光するマイクロレンズを形成する工程と、
を備えることを特徴とする固体撮像装置の製造方法。 A manufacturing method of a solid-state imaging device using a semiconductor substrate having an element forming layer and a thinning removal layer that is laminated on one surface of the element forming layer and also serves as reinforcement of the element forming layer,
Forming a gettering layer between the element formation layer and the thinning removal layer;
Providing a hole accumulating layer on the surface of the element forming layer in contact with the gettering layer so as to cover the gettering layer;
Forming a photoelectric conversion element in the element formation layer and an active element that converts a signal charge photoelectrically converted by the photoelectric conversion element into an electric signal and outputs the electric signal;
Forming a wiring layer for performing wiring of the active element on the other surface of the element forming layer on which the active element is formed;
Removing the thinning removal layer;
Forming a microlens for condensing incident light on the photoelectric conversion element on the surface of the gettering layer after the removal layer for thinning is removed;
A method for manufacturing a solid-state imaging device.
前記素子形成層の他方の面に設けられたデバイス及びゲッタリング部と、
前記デバイス及びゲッタリング部が設けられた前記素子形成層の他方の面に設けられ前記デバイスの配線を行う配線層と、
を備えることを特徴とする半導体装置。 A semiconductor substrate having an element forming layer and a thinning removal layer that is laminated on one surface of the element forming layer and also serves as a reinforcement of the element forming layer;
A device and a gettering portion provided on the other surface of the element formation layer;
A wiring layer provided on the other surface of the element forming layer provided with the device and the gettering portion, and for wiring the device;
A semiconductor device comprising:
前記素子形成層の他方の面にデバイスを形成する工程と、
前記素子形成層の他方の面の一部にゲッタリング部を形成する工程と、
前記素子形成層の他方の面に前記デバイスの配線を行う配線層を形成する工程と、
前記薄膜化用除去層を除去する工程と、
を備えることを特徴とする半導体装置の製造方法。 A manufacturing method of a semiconductor device using a semiconductor substrate having an element forming layer and a thinning removal layer that is laminated on one surface of the element forming layer and serves also as a reinforcement of the element forming layer,
Forming a device on the other surface of the element formation layer;
Forming a gettering portion on a part of the other surface of the element formation layer;
Forming a wiring layer for wiring the device on the other surface of the element formation layer;
Removing the thinning removal layer;
A method for manufacturing a semiconductor device, comprising:
前記素子形成層の他方の面に形成された光電変換素子及び該光電変換素子で光電変換された信号電荷を電気信号に変換して出力する能動素子と、
前記素子形成層の他方の面に設けられたゲッタリング部と、
前記素子形成層の他方の面に積層して設けられ前記能動素子の配線を行う配線層と、
を備えることを特徴とする固体撮像装置。 A semiconductor substrate having at least an element forming layer and a condensing microlens provided on one surface of the element forming layer;
A photoelectric conversion element formed on the other surface of the element formation layer and an active element that converts a signal charge photoelectrically converted by the photoelectric conversion element into an electric signal and outputs the electric signal;
A gettering portion provided on the other surface of the element formation layer;
A wiring layer provided on the other surface of the element forming layer and provided for wiring of the active element;
A solid-state imaging device comprising:
前記素子形成層の他方の面に光電変換素子及び該光電変換素子で光電変換された信号電荷を電気信号に変換して出力する能動素子を形成する工程と、
前記素子形成層の他方の面の前記光電変換素子及び前記能動素子が形成されない箇所にゲッタリング部を形成する工程と、
前記素子形成層の他方の面に前記能動素子の配線を行う配線層を形成する工程と、
前記薄膜化用除去層を除去する工程と、
前記薄膜化用除去層が除去された後の前記素子形成層の一方の面に前記光電変換素子への入射光を集光するマイクロレンズを形成する工程と、
を備えることを特徴とする固体撮像装置の製造方法。 A manufacturing method of a solid-state imaging device using a semiconductor substrate having an element forming layer and a thinning removal layer that is laminated on one surface of the element forming layer and also serves as reinforcement of the element forming layer,
Forming a photoelectric conversion element on the other surface of the element formation layer and an active element that converts a signal charge photoelectrically converted by the photoelectric conversion element into an electric signal and outputs the electric signal;
Forming a gettering portion at a location where the photoelectric conversion element and the active element are not formed on the other surface of the element formation layer;
Forming a wiring layer for wiring the active element on the other surface of the element formation layer;
Removing the thinning removal layer;
Forming a microlens for condensing incident light on the photoelectric conversion element on one surface of the element forming layer after the removal layer for thinning is removed;
A method for manufacturing a solid-state imaging device.
前記固体撮像装置に被写体からの入射光を導く光学系と、
前記固体撮像装置からの出力信号を処理する信号処理回路とを備え、
前記固体撮像装置は、
素子形成層を有する半導体基板と、
前記素子形成層の一方の面に形成されたゲッタリング層と、
前記ゲッタリング層と接する前記素子形成層の面に前記ゲッタリング層を覆うように形成された正孔蓄積層と、
前記素子形成層の他方の面に形成された光電変換素子及び該光電変換素子で光電変換された信号電荷を電気信号に変換して出力する能動素子と、
前記能動素子が形成された前記素子形成層の他方の面に積層して設けられ前記能動素子の配線を行う配線層と、
を備えることを特徴とする撮像装置。 A solid-state imaging device in which a unit pixel includes a photoelectric conversion element and an active element that converts a signal charge photoelectrically converted by the photoelectric conversion element into an electric signal and outputs the electric signal;
An optical system for guiding incident light from a subject to the solid-state imaging device;
A signal processing circuit for processing an output signal from the solid-state imaging device,
The solid-state imaging device
A semiconductor substrate having an element formation layer;
A gettering layer formed on one surface of the element forming layer;
A hole accumulating layer formed to cover the gettering layer on the surface of the element forming layer in contact with the gettering layer;
A photoelectric conversion element formed on the other surface of the element formation layer and an active element that converts a signal charge photoelectrically converted by the photoelectric conversion element into an electric signal and outputs the electric signal;
A wiring layer that is provided on the other surface of the element formation layer on which the active element is formed, and performs wiring of the active element;
An imaging apparatus comprising:
前記固体撮像装置に被写体からの入射光を導く光学系と、
前記固体撮像装置からの出力信号を処理する信号処理回路とを備え、
前記固体撮像装置は、
素子形成層を有する半導体基板と、
前記素子形成層の一方の面に形成されたゲッタリング層と、
前記素子形成層の他方の面に形成された光電変換素子及び該光電変換素子で光電変換された信号電荷を電気信号に変換して出力する能動素子と、
前記素子形成層の他方の面の前記光電変換素子及び能動素子が形成されない箇所に設けられたゲッタリング部と、
前記素子形成層の他方の面に積層して設けられ前記能動素子の配線を行う配線層と、
を備えることを特徴とする撮像装置。 A solid-state imaging device in which a unit pixel includes a photoelectric conversion element and an active element that converts a signal charge photoelectrically converted by the photoelectric conversion element into an electric signal and outputs the electric signal;
An optical system for guiding incident light from a subject to the solid-state imaging device;
A signal processing circuit for processing an output signal from the solid-state imaging device,
The solid-state imaging device
A semiconductor substrate having an element formation layer;
A gettering layer formed on one surface of the element forming layer;
A photoelectric conversion element formed on the other surface of the element formation layer and an active element that converts a signal charge photoelectrically converted by the photoelectric conversion element into an electric signal and outputs the electric signal;
A gettering portion provided at a place where the photoelectric conversion element and the active element on the other surface of the element formation layer are not formed;
A wiring layer provided on the other surface of the element forming layer and provided for wiring of the active element;
An imaging apparatus comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006229766A JP4997879B2 (en) | 2005-08-26 | 2006-08-25 | Semiconductor device, manufacturing method thereof, solid-state imaging device, manufacturing method thereof, and imaging device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005245246 | 2005-08-26 | ||
| JP2005245246 | 2005-08-26 | ||
| JP2006229766A JP4997879B2 (en) | 2005-08-26 | 2006-08-25 | Semiconductor device, manufacturing method thereof, solid-state imaging device, manufacturing method thereof, and imaging device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007088450A JP2007088450A (en) | 2007-04-05 |
| JP2007088450A5 true JP2007088450A5 (en) | 2009-10-01 |
| JP4997879B2 JP4997879B2 (en) | 2012-08-08 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2006229766A Expired - Fee Related JP4997879B2 (en) | 2005-08-26 | 2006-08-25 | Semiconductor device, manufacturing method thereof, solid-state imaging device, manufacturing method thereof, and imaging device |
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| JP (1) | JP4997879B2 (en) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008103664A (en) * | 2006-09-20 | 2008-05-01 | Fujifilm Corp | Manufacturing method of back-illuminated image sensor, back-illuminated image sensor, and image pickup apparatus including the same |
| JP4610586B2 (en) * | 2007-07-02 | 2011-01-12 | 富士フイルム株式会社 | Manufacturing method of semiconductor device |
| JP5347520B2 (en) * | 2009-01-20 | 2013-11-20 | ソニー株式会社 | Method for manufacturing solid-state imaging device |
| JP5402040B2 (en) | 2009-02-06 | 2014-01-29 | ソニー株式会社 | Solid-state imaging device and manufacturing method thereof, imaging device, semiconductor device and manufacturing method thereof, and semiconductor substrate |
| JP5453832B2 (en) * | 2009-02-20 | 2014-03-26 | ソニー株式会社 | Solid-state imaging device and imaging device |
| JP5773379B2 (en) * | 2009-03-19 | 2015-09-02 | ソニー株式会社 | SEMICONDUCTOR DEVICE, ITS MANUFACTURING METHOD, AND ELECTRONIC DEVICE |
| JP5985136B2 (en) | 2009-03-19 | 2016-09-06 | ソニー株式会社 | SEMICONDUCTOR DEVICE, ITS MANUFACTURING METHOD, AND ELECTRONIC DEVICE |
| JP5279775B2 (en) * | 2010-08-25 | 2013-09-04 | 株式会社東芝 | Manufacturing method of semiconductor device |
| JP2012174937A (en) | 2011-02-22 | 2012-09-10 | Sony Corp | Semiconductor device, manufacturing method of semiconductor device, bonding method of semiconductor wafer and electronic apparatus |
| JP5246304B2 (en) * | 2011-07-11 | 2013-07-24 | ソニー株式会社 | Method for manufacturing solid-state imaging device |
| JP6612139B2 (en) * | 2016-01-22 | 2019-11-27 | ルネサスエレクトロニクス株式会社 | Semiconductor device |
| US11605665B2 (en) | 2019-10-25 | 2023-03-14 | Canon Kabushiki Kaisha | Semiconductor apparatus and method for producing semiconductor apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH1032209A (en) * | 1996-07-17 | 1998-02-03 | Hitachi Ltd | SOI wafer, method of manufacturing the same, and semiconductor integrated circuit device using the SOI wafer |
| JP4534412B2 (en) * | 2002-06-26 | 2010-09-01 | 株式会社ニコン | Solid-state imaging device |
| JP4534484B2 (en) * | 2003-12-26 | 2010-09-01 | ソニー株式会社 | Solid-state imaging device and manufacturing method thereof |
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