JP2007080892A - Vessel for semiconductor heating heater and semiconductor manufacturing apparatus provided therewith - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vessel for a semiconductor heating heater that can improve uniformity of temperature of a heater and keep high uniformity of heater temperature during heating as well as from the start of heating to the end of cooling especially. <P>SOLUTION: The vessel 1 for a semiconductor heating heater is provided with a heater 2 at its opening, and the surface roughness Ra of a constituent member of the vessel 1 is below 10 μm, preferably 5 μm or less. The vessel 1 can be provided with a cooling module 4 along with the heater 2, and the module 4, can preferably distribute a fluid. The heater 2 is preferably a ceramics heater made mainly of either of aluminum nitride, silicon nitride, silicon carbide, aluminum oxide, and aluminum oxynitride. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a container that accommodates and supports a heater for mounting and heat-treating an object to be heated, and an apparatus including the container. More specifically, it is a container for a semiconductor heater that accommodates and supports a heater for heating a semiconductor wafer, and particularly for a semiconductor heater applied to a heater that is preferably used in a coater developer or the like used in a photolithography process. It relates to the container.

  Conventionally, in a semiconductor manufacturing process, various processes such as a film formation process and an etching process are performed on a semiconductor substrate (wafer) that is an object to be processed. In a semiconductor manufacturing apparatus that performs processing on such a semiconductor substrate, a ceramic heater for holding and heating the semiconductor substrate is used.

  For example, in the photolithography process, a resist film pattern is formed on the wafer. In this process, the wafer is cleaned, heat-dried, cooled, coated with a resist film on the wafer surface, mounted on a ceramic heater in a photolithography processing apparatus, dried, and then subjected to processing such as exposure and development. Applied. In this photolithography process, since the temperature at which the resist is dried greatly affects the quality of the coating film, the temperature uniformity of the ceramic heater during processing is important.

  Further, these wafer processes are required to be completed in as short a time as possible in order to improve the throughput. For this reason, the inventors have studied a semiconductor manufacturing apparatus having a cooling means in order to cool the heated heater in a short time. For example, Japanese Unexamined Patent Application Publication No. 2004-014655 has proposed a semiconductor manufacturing apparatus including a plate-like structure that can be contacted and separated on the surface opposite to the wafer mounting surface of the heater. Japanese Patent Application Laid-Open No. 2005-150506 discloses that a cooling liquid flow path is formed in a plate-like structure to further improve the cooling rate and to maintain the uniformity of the heater temperature from the start of cooling to the end of cooling. Proposed semiconductor manufacturing equipment.

JP 2004-014655 A JP 2005-150506 A

  In recent semiconductor manufacturing processes such as electronic devices, further uniformity of the temperature distribution of the heater is required. The temperature distribution of the heater is not only during heating and holding but also from the start of heating to the end of cooling. There is a need for even greater uniformity. In addition, further improvement in temperature rise and cooling rate is also required.

  In view of such a conventional situation, the present invention can improve the temperature uniformity of a heater for heating a semiconductor, particularly during heating and holding, and from the start of heating to the end of cooling. Another object of the present invention is to provide a container for a semiconductor heater capable of obtaining high uniformity of the heater temperature.

  In order to achieve the above object, a container for a semiconductor heater provided by the present invention is a container for accommodating and supporting a heater for heating a semiconductor, wherein the heater is installed in the opening, and the surface roughness of the constituent members is provided. The surface roughness of the component member is particularly preferably 5 μm or less.

  The heater to be housed and supported in the semiconductor heater container provided by the present invention is a ceramic heater mainly composed of any one of aluminum nitride, silicon nitride, silicon carbide, aluminum oxide, and aluminum oxynitride. Preferably there is.

  Furthermore, the container for a semiconductor heater provided by the present invention of the present invention can include a cooling module together with the heater. The cooling module is preferably capable of fluid flow.

  The present invention also provides a semiconductor manufacturing apparatus equipped with the semiconductor heater container of the present invention that accommodates and supports the heater described above.

  According to the present invention, by controlling the surface roughness of the container for housing and supporting the heater for heating the semiconductor, the temperature uniformity of the heater is improved, and of course during heating and holding, the heating starts High uniformity can be obtained during the period from cooling to completion of cooling. In addition, by accommodating and supporting the heater in the semiconductor heater container and mounting it on the semiconductor manufacturing apparatus, temperature uniformity during processing of the semiconductor wafer is improved, and high throughput is achieved in the semiconductor manufacturing process, particularly in the photolithography process. High quality production is possible.

  In order to improve the temperature uniformity (heat uniformity) of the heater for semiconductor heating, it is important to suppress the influence of the environment as much as possible, such as the peripheral members of the heater. That is, excellent heat uniformity of the heater can be obtained by making the heat generation of the heater uniform and at the same time minimizing other influences such as the surrounding environment. And in order to suppress the influence of heat from the surrounding environment, it is necessary to consider how heat is transmitted.

  There are three modes of heat transfer: heat transfer, radiation, and convection, and these must be considered. Heat transfer is suppressed by minimizing the amount of parts that contact the heater. For convection, it is effective to suppress the flow of gas from the periphery. In order to suppress the flow of gas, a heater that is preferably used particularly for a coater developer used in a photolithography process, for example, as shown in FIG. 1, a container 1 that accommodates and supports the heater 2 is used. The heater 2 is installed in the opening of the container 1 by a supporting foot 3 or the like.

  Further, since radiation is generated between opposing materials, the heat generated from the heater when the semiconductor is heated is affected by radiation with the container. That is, in the container 1 having the structure shown in FIG. 1, the heater 2 is installed in the opening of the container 1, so that the side surface and the lower surface of the heater 2 are basically opposed to the container 1. According to the study by the present inventors, it has been clarified that by controlling the surface roughness of the members constituting the container, the influence of radiation can be suppressed and the soaking property of the heater is remarkably improved.

  That is, in the present invention, by setting the surface roughness of the members constituting the container to 10 μm or less in Ra, the thermal influence given by the container can be suppressed, and the thermal uniformity of the heater can be enhanced. It has been found that this effect suppresses not only the radiation between the container and the heater but also the influence of the radiation between the container and the outside thereof, for example, the chamber for controlling the atmosphere, on the heat uniformity of the heater. More preferably, if the surface roughness Ra of the member constituting the container is 5 μm or less, the heat uniformity of the heater is further improved.

  The material of the member constituting the container for a semiconductor heater according to the present invention is not particularly limited as long as it satisfies heat resistance with respect to the temperature of the heater to be accommodated and supported. In general, metal-based materials are desirable, and aluminum, copper, iron, stainless steel, and the like are common, but not particularly limited thereto.

  The material of the heater accommodated and supported in the container is preferably ceramic. The use of a metal heater is not preferable because there is a problem that particles adhere to the wafer. As ceramics, those containing as a main component any one of aluminum nitride, silicon nitride, silicon carbide, aluminum oxide, and aluminum oxynitride are preferable. For example, if importance is attached to the uniformity of the temperature distribution, aluminum nitride or silicon carbide having high thermal conductivity is preferable. If importance is placed on reliability, silicon nitride is preferable because it is strong and resistant to thermal shock. If importance is attached to the cost, aluminum oxide is preferable. Among these ceramics, aluminum nitride (AlN) is preferable in consideration of the balance between performance and cost.

  The container for a semiconductor heater according to the present invention preferably includes a cooling module together with the heater. For example, as shown in FIG. 2, the container 1 contains a heater 2 in which a heating element circuit 2b and an insulating layer 2c for protecting the heating element circuit 2b are formed on the back surface of the ceramic substrate 2a, and a cooling module 4. Can be supported. It is desirable for the cooling module 4 to allow fluid to flow therethrough. In addition, the cooling module 4 can be brought into contact with or separated from the back side of the heater 2 as required by lifting means 5 such as an air cylinder. The cooling module 4 has a through-hole (not shown) for inserting a through-hole for inserting the support foot 3, an electrode for supplying power to the heater 2, a lead wire for temperature measuring means, and the like. Is provided.

  By the way, conventionally, a proposal has been made to improve the flatness and surface roughness of the heater main surface (wafer mounting surface) on which the object to be heated is mounted, and to make the temperature distribution of the object to be heated uniform. In a heater unit having a module, there has been no proposal to make the temperature distribution uniform and improve the cooling rate by improving the flatness of the contact surfaces of the heater and the cooling module.

  According to the studies by the present inventors, by flattening both the flatness of the contact surface of the heater with the cooling module and the flatness of the contact surface of the cooling module with the heater, the heater and the cooling module Can be evenly contacted on the entire surface, and the adhesion between the two can be further improved, improving the heat transfer rate, improving the cooling rate when the cooling module is in contact with the heater, and cooling the entire back surface of the heater uniformly. Therefore, it was found that the uniformity of the temperature distribution of the heater during cooling is further improved.

  Specifically, regarding the contact surfaces of the heater and the cooling module, the flatness of the contact surface of the heater with the cooling module and the flatness of the contact surface of the cooling module with the heater are the sum of the two. It is preferable to planarize so that it may be 0.8 mm or less, and it is still more preferable if it is 0.4 mm or less. Even if only one of the flatness of the contact surface of the heater with the cooling module or the flatness of the contact surface of the cooling module with the heater is flattened, the above effect cannot be obtained. The above effect can be obtained for the first time when the sum of the flatness of both is 0.8 mm or less.

  In addition, as shown in FIG. 2, the heating element circuit 2b is formed inside, and even in the case of the heater 2 in which the wafer to be heated is mounted on the main surface and heat-treated, By making the sum of the flatness of the contact surface of the heater 2 with the cooling module 4 (ie, the insulating layer 2c) and the flatness of the contact surface of the cooling module 4 with the heater 2 less than 0.8 mm, the heater The effects of the uniformity of the temperature distribution and the improvement of the cooling rate can be obtained. Also in this case, it is more preferable that the sum of both flatnesses is 0.4 mm or less.

  To flatten the contact surfaces of the heater and the cooling module, a known lapping method or a processing method such as grinding with a grindstone can be used. The surface roughness of both after processing is preferably 5 μm or less in terms of Ra. By setting the surface roughness of the respective contact surfaces of the heater and the cooling module to 5 μm or less by Ra, the adhesion between the heater and the cooling block is improved, and the uniformity of the heater temperature distribution and the cooling rate are improved.

  In particular, when the surface roughness of the contact surface of the heater with the cooling module is improved and brought close to a mirror state, the radiation rate of the surface decreases. When the emissivity is reduced, the amount of heat released from the surface is reduced, which is preferable because energy saving for electric power for heating the heater can be achieved. In addition, when the heater substrate is ceramic, if the surface roughness is rough, the ceramic particles fall off due to friction when contacting the cooling block, and these particles become particles and adversely affect the quality of the object to be heated. . For this reason, the surface roughness of the ceramic heater is more preferably 1 μm or less in terms of Ra.

  As shown in FIG. 2, in the case of the heater 2 in which the insulating layer 2c for protecting the heating element circuit 2b is formed on the back surface, if the processing is performed too much to flatten the contact surface with the cooling module, the insulating layer The thickness of 2c becomes thin, and in some cases, the heating element circuit 2b may be exposed to cause a short circuit accident. In order to prevent this, the thickness of the insulating layer may be increased. However, since the insulating layer often has a low thermal conductivity, a thick thickness increases the thermal resistance and slows the cooling rate. Therefore, the thickness of the insulating layer is preferably 15 μm or more and 500 μm or less after planarization. Furthermore, if there is variation in the thickness of the insulating layer after planarization, the thermal resistance changes and the cooling rate varies, so the heater temperature distribution tends to be non-uniform. Therefore, the thickness of the insulating layer after planarization is desirably uniform, and the difference between the maximum value and the minimum value of the insulating layer is preferably 200 μm or less.

Next, the heater manufacturing method will be described in detail by taking the case of AlN as an example. The AlN raw material powder preferably has a specific surface area of 2.0 to 5.0 m ² / g. When the specific surface area is less than 2.0 m ² / g, the sinterability of AlN is lowered. Conversely, when the specific surface area exceeds 5.0 m ² / g, the aggregation of the powder becomes very strong, and handling becomes difficult. Furthermore, the amount of oxygen contained in the raw material AlN powder is preferably 2% by weight or less. When the amount of oxygen exceeds 2% by weight, the thermal conductivity of the sintered body decreases. The amount of metal impurities other than aluminum contained in the raw material powder is preferably 2000 ppm or less. When the amount of metal impurities exceeds the above range, the thermal conductivity of the sintered body decreases. In particular, as a metal impurity, a group 4 element such as Si or an iron group element such as Fe has a high effect of reducing the thermal conductivity of the sintered body, and therefore the content thereof is preferably 500 ppm or less.

  Moreover, since AlN is a hardly sinterable material, it is preferable to add a sintering aid to the AlN raw material powder. The sintering aid to be added is preferably a rare earth element compound. The rare earth element compound reacts with the aluminum oxide or aluminum oxynitride present on the surface of the AlN powder particles during sintering to promote densification of AlN and to reduce the thermal conductivity of the AlN sintered body. Since it also has a function of removing the oxygen that causes it, the thermal conductivity of the obtained AlN sintered body can be improved.

  The addition amount of the rare earth element compound as a sintering aid is preferably in the range of 0.01 to 5% by weight. When the addition amount is less than 0.01% by weight, it is difficult to obtain a dense sintered body, and the thermal conductivity of the sintered body is lowered. If the amount exceeds 5% by weight, a sintering aid exists at the grain boundary of the AlN sintered body. Therefore, when used in a corrosive atmosphere, the sintering aid present at the grain boundary is etched. , Cause degranulation and particles. More preferably, the addition amount of the sintering aid is 1% by weight or less. If it is 1% by weight or less, the sintering aid is not present at the triple point of the grain boundary, so that the corrosion resistance is improved.

  Among the rare earth element compounds, an yttrium compound having a particularly remarkable function of removing oxygen is preferable. As the rare earth element compound, an oxide, nitride, fluoride, stearic acid compound, or the like can be used. Among these, oxides are preferable because they are inexpensive and easily available. In addition, since the stearic acid compound has high affinity with the organic solvent, mixing the AlN raw material powder and the sintering aid with the organic solvent is particularly preferable because the mixing property is increased.

  A predetermined amount of a solvent, a binder, and, if necessary, a dispersant and a glaze are added to and mixed with these AlN raw material powder and sintering aid powder. As a mixing method, ball mill mixing, ultrasonic mixing, or the like is possible. A raw material slurry can be obtained by such mixing. An AlN sintered body can be obtained by molding and sintering the obtained slurry. There are two types of heater manufacturing methods at that time, a cofire method and a post metallization method.

  First, the post metallization method will be described. Granules are produced from the slurry by a technique such as spray drying. The granules are inserted into a predetermined mold and press-molded. If the pressing pressure at this time is less than 9.8 MPa, the strength of the molded body is often not obtained sufficiently, and it tends to be damaged by handling or the like, so it is desirable that the pressing pressure is 9.8 MPa or more.

Although the density of a molded object changes with content of a binder, and the addition amount of a sintering auxiliary agent, it is preferable that it is 1.5-2.5 g / cm < ³ >. When the green body density is less than 1.5 g / cm ³ , the distance between the raw material powder particles becomes relatively large, so that the sintering is difficult to proceed. Further, if the density of the molded body exceeds 2.5 g / cm ³ , it is difficult to sufficiently remove the binder in the molded body by the degreasing process in the next step, so that a dense sintered body as described above can be obtained. It becomes difficult.

  Next, the molded body is heated in a non-oxidizing atmosphere to perform a degreasing treatment. As the non-oxidizing atmosphere gas, nitrogen or argon is preferable. When the degreasing treatment is performed in an oxidizing atmosphere such as the air, the surface of the AlN powder is oxidized, so that the thermal conductivity of the sintered body is lowered. The heating temperature for the degreasing treatment is preferably 500 ° C. or higher and 1000 ° C. or lower. When the temperature is less than 500 ° C., the binder cannot be sufficiently removed, and excessive carbon remains in the molded body after the degreasing treatment, which hinders sintering in the subsequent sintering step. Further, at a temperature exceeding 1000 ° C., the amount of remaining carbon becomes too small, so that the ability of the oxide film present on the surface of the AlN powder to remove oxygen is lowered, and the thermal conductivity of the sintered body is lowered. The amount of carbon remaining in the molded body after the degreasing treatment is preferably 1.0% by weight or less. If carbon exceeding 1.0% by weight remains, sintering is inhibited, so that a dense sintered body cannot be obtained.

  Next, the molded body is sintered. Sintering is performed at a temperature of 1700 to 2000 ° C. in a non-oxidizing atmosphere such as nitrogen or argon. At this time, it is preferable that the moisture contained in the non-oxidizing atmosphere gas to be used is −30 ° C. or less in terms of dew point. In the case of containing more moisture than this, AlN reacts with moisture in the atmospheric gas during sintering to form oxynitrides, which may reduce the thermal conductivity. Further, the amount of oxygen in the atmospheric gas is preferably 0.001% by volume or less. If the amount of oxygen is large, the surface of AlN may oxidize and the thermal conductivity may decrease.

  Furthermore, a boron nitride (BN) compact is suitable for the jig used during sintering. Since this BN compact has sufficient heat resistance to the sintering temperature and has a solid lubricating property on its surface, the friction between the jig and the compact when the compact shrinks during sintering. Therefore, a sintered body with less distortion can be obtained.

  The obtained sintered body is processed as necessary. When the conductive paste is screen-printed in the next step, the surface roughness of the sintered body is preferably 5 μm or less in terms of Ra. If the surface roughness Ra exceeds 5 μm, defects such as pattern bleeding and pinholes are likely to occur when a circuit is formed by screen printing. The surface roughness Ra is more preferably 1 μm or less.

  The polishing process for obtaining the above surface roughness is natural when screen printing is performed on both sides of the sintered body, but even when screen printing is performed on only one side, the surface on the opposite side is also polished with the screen printing surface. It is better to apply. When only the surface to be screen printed is polished, the sintered body is supported by the surface that is not polished during screen printing. At this time, there may be protrusions and foreign matters on the surface that has not been polished, so that the fixing of the sintered body becomes unstable, and the circuit pattern may not be drawn well by screen printing.

  Moreover, it is preferable that the parallelism of both process surfaces of a sintered compact is 0.5 mm or less. If the parallelism exceeds 0.5 mm, the thickness of the conductive paste may vary greatly during screen printing. The parallelism is particularly preferably 0.1 mm or less. Furthermore, the flatness of the screen printing surface is preferably 0.5 mm or less. When the flatness exceeds 0.5 mm, the variation in the thickness of the conductive paste may also increase. The flatness is particularly preferably 0.1 mm or less.

A conductive paste is applied by screen printing to the sintered body that has been polished as described above to form an electric circuit. The conductor paste can be obtained by mixing an oxide powder, a binder, and a solvent as required with a metal powder. As the metal powder, tungsten, molybdenum, or tantalum is preferable from the viewpoint of matching the thermal expansion coefficient with ceramics. In order to increase the adhesion strength with AlN, an oxide powder can also be added. The oxide powder is preferably an oxide of 2A group element or 3A group element, Al ₂ O ₃ , SiO ₂ or the like. In particular, yttrium oxide is preferable because it has very good wettability with AlN. The addition amount of these oxides is preferably 0.1 to 30% by weight. If it is less than 0.1% by weight, the adhesion strength between the metal layer, which is the formed electric circuit, and AlN is lowered. On the other hand, if it exceeds 30% by weight, the electric resistance value of the metal layer, which is an electric circuit, becomes high.

  The thickness of the conductive paste is preferably 5 to 100 μm after drying. When the thickness is less than 5 μm, the electrical resistance value becomes too high and the adhesion strength is lowered. In addition, when the circuit pattern to be formed is a heater circuit (a heating element circuit), the pattern interval is preferably 0.1 mm or more. If the interval is less than 0.1 mm, a leakage current may occur depending on the applied voltage and temperature, causing a short circuit when a current is passed through the heating element. In particular, when used at a temperature of 500 ° C. or higher, the pattern interval is preferably 1 mm or more, more preferably 3 mm or more.

  Next, the conductive paste is degreased and then fired to form an electric circuit. The conductive paste is degreased in a non-oxidizing atmosphere such as nitrogen or argon. The degreasing temperature is preferably 500 ° C. or higher. When the degreasing temperature is less than 500 ° C., the removal of the binder in the conductive paste is insufficient, so that carbon remains in the metal layer and forms metal carbides when fired, so the electric resistance value of the metal layer is high. Become.

  In addition, the conductive paste is preferably baked at a temperature of 1500 ° C. or higher in a non-oxidizing atmosphere such as nitrogen or argon. When the temperature is less than 1500 ° C., the particle growth of the metal powder in the conductive paste does not proceed, so that the electric resistance value of the fired metal layer becomes too high. The firing temperature should not exceed the sintering temperature of the ceramic. When the conductive paste is fired at a temperature exceeding the sintering temperature of the ceramic, the sintering aid contained in the ceramic begins to evaporate, and further, the grain growth of the metal powder in the conductive paste is promoted, and the ceramic and the metal layer. Adhesion strength with is reduced.

Next, in order to ensure the insulation of the formed metal layer, an insulating coat can be formed on the metal layer. The material of the insulating coating is not particularly limited as long as the reactivity with the electric circuit is small and the difference in thermal expansion coefficient from AlN is 5.0 × 10 ⁻⁶ / K or less. For example, crystallized glass or AlN can be used. These materials can be made into, for example, a paste, screen printed with a predetermined thickness, degreased as necessary, and then fired at a predetermined temperature to form an insulating coat.

  Furthermore, a ceramic substrate can be laminated as required. Lamination of ceramic substrates is preferably performed via a bonding agent. As a bonding agent, a 2A group element compound or a 3A group element compound, a binder and a solvent are added to aluminum oxide powder or aluminum nitride powder, and a paste is applied to the bonding surface by a technique such as screen printing. Although there is no restriction | limiting in particular in the thickness of the bonding agent to apply | coat, it is preferable that it is 5 micrometers or more. When the thickness is less than 5 μm, bonding defects such as pinholes and bonding unevenness easily occur in the bonding layer.

  The ceramic substrate coated with the bonding agent is degreased at a temperature of 500 ° C. or higher in a non-oxidizing atmosphere. Thereafter, the ceramic substrates to be stacked are superposed, a predetermined load is applied, and the ceramic substrates are bonded together by heating in a non-oxidizing atmosphere. It is preferable that the load in that case is 5 kPa or more. When the load is less than 5 kPa, sufficient bonding strength cannot be obtained, or the above-described bonding defects are likely to occur. The heating temperature for bonding is not particularly limited as long as the ceramic substrates are sufficiently adhered to each other through the bonding layer, but is preferably 1500 ° C. or higher. If it is less than 1500 degreeC, sufficient joining strength is hard to be obtained and it will be easy to produce a joint defect. Nitrogen, argon, or the like is preferably used for the non-oxidizing atmosphere during the degreasing and bonding.

  As described above, a ceramic laminated sintered body serving as a heater can be obtained. As the electric circuit, for example, a molybdenum wire (coil) is used in the case of a heater circuit without using the above-described conductive paste. In the case of an electrostatic adsorption electrode or an RF electrode, a mesh of molybdenum or tungsten is used. It is also possible to use (mesh). In this case, the molybdenum coil and mesh are incorporated in the AlN raw material powder, and can be manufactured by a hot press method. The hot press temperature and atmosphere may be in accordance with the sintering temperature and sintering atmosphere of AlN, but the hot press pressure is preferably 0.98 MPa or more. When the pressure is less than 0.98 MPa, a gap is generated between the molybdenum coil or mesh and AlN, and the performance as a heater or wafer holder may not be obtained.

  Next, the cofire method will be described. First, the raw material slurry described above is formed into a sheet by a doctor blade method. Although there is no restriction | limiting in particular regarding sheet | seat shaping | molding, The thickness of a sheet | seat is preferably 3 mm or less after drying. If the thickness of the sheet exceeds 3 mm, the amount of drying shrinkage of the slurry increases, so that the probability of cracking in the sheet increases.

  On this sheet | seat, the metal layer used as the electrical circuit of a predetermined shape is formed by apply | coating a conductor paste by methods, such as screen printing. As the conductive paste, the same paste as described in the above post metallization method can be used. However, in the cofire method, there is little trouble even if no oxide powder is added to the conductive paste.

  Next, the sheet on which the circuit is formed and the sheet on which the circuit is not formed are stacked. In the laminating method, each sheet is set at a predetermined position and overlapped. At this time, a solvent is applied between the sheets as necessary. In the state where the sheets are overlapped, heating is performed as necessary. When heating, it is preferable that heating temperature is 150 degrees C or less. When heated to a temperature exceeding this, the laminated sheets are greatly deformed. Then, the stacked sheets are integrated by applying pressure. The applied pressure is preferably in the range of 1 to 100 MPa. If the pressure is less than 1 MPa, the sheets may not be sufficiently integrated and may peel during the subsequent steps. Moreover, if a pressure exceeding 100 MPa is applied, the amount of deformation of the sheet becomes too large, which is not preferable.

  The sheet laminate is degreased and sintered in the same manner as the post metallization method described above. The temperature and carbon amount in the degreasing treatment and sintering are the same as in the post metallization method. In addition, when printing the above-mentioned conductive paste on a sheet, a heater circuit, an electrostatic adsorption electrode, etc. are printed on a plurality of sheets, respectively, and these are laminated to easily produce a heater having a plurality of electric circuits. It is also possible to do. In addition, when an electrical circuit such as a heating element circuit is formed in the outermost layer of the ceramic laminate, in order to protect the electrical circuit and ensure insulation, as in the case of the post metallization method described above, An insulating coating can be formed on the electrical circuit. In this way, a ceramic laminated sintered body serving as a heater can be obtained.

  The obtained ceramic laminated sintered body is processed as necessary. Usually, in the sintered state, the accuracy required for a semiconductor manufacturing apparatus is often not reached. As for the processing accuracy, for example, the flatness of the wafer mounting surface on which the wafer to be processed is mounted is preferably 0.5 mm or less, and more preferably 0.1 mm or less. If the flatness exceeds 0.5 mm, a gap is likely to be generated between the wafer and the heater, and the heat of the heater is not transmitted uniformly to the wafer, so that the wafer temperature is likely to be uneven.

  Moreover, the surface roughness of the wafer mounting surface is preferably 5 μm or less in terms of Ra. If the Ra exceeds 5 μm, the AlN may become more degranulated due to friction between the heater and the workpiece. At this time, the shed particles become particles, which adversely affects processing such as film formation and etching on the wafer. The surface roughness is more preferably 1 μm or less in terms of Ra.

  As shown in FIG. 1, a heater 2 that is composed of a ceramic substrate, a heating element circuit, and an insulating layer and that heats a wafer to be processed is manufactured, and a container 1 that accommodates and supports the heater 2. . That is, as the container 1, a stainless steel container having an outer diameter of 350 mm, an inner diameter of 335 mm, and a height of 35 mm was produced. At that time, as shown in Table 1 below, the surface roughness Ra is 1.2 μm, 3.1 μm, 3.1 μm, 4 for all of the inner surface (inner peripheral surface and inner bottom surface) and outer surface (outer peripheral surface and outer bottom surface). It processed so that it might become six types, 0.5 micrometer, 6.2 micrometer, 8.7 micrometers, and 10.4 micrometers.

  On the other hand, as the ceramic base 2a of the heater 2, an aluminum nitride (AlN) sintered body having a diameter of 330 mm and a thickness of 12 mm was used. A heating element circuit 2b and an insulating layer 2c were formed on the back surface of the ceramic substrate 2a. The heating element circuit 2b was produced by applying a conductive paste by screen printing. The conductor paste was prepared by mixing metal powder, oxide powder as required, binder and solvent. As the metal powder, tungsten was used because of the matching of the thermal expansion coefficient with AlN. The insulating layer was formed by applying a paste obtained by adding an organic solvent and a binder to glass powder by screen printing and then baking.

  As shown in FIG. 1, the heater 2 was accommodated and supported by the support legs 3 in the containers 1 of the samples 1 to 6, and the temperature uniformity of the heater was measured. In other words, the soaking property is measured by using a 17-point wafer thermometer to heat and heat the heater to 150 ° C, 200 ° C, and 250 ° C. The temperature difference was measured, and the temperature difference is shown in Table 1 as the soaking property.

  From the above results, the samples 1 to 6 of the present invention in which Ra is 10 μm or less are superior in the heat uniformity of the heater, particularly Ra, compared to the sample 6 of the comparative example in which the surface roughness Ra of the container exceeds 10 μm. It can be seen that samples 1 to 3 having a thickness of 5 μm or less are particularly excellent in soaking.

It is a schematic sectional drawing which shows the container which accommodated and supported the heater. It is general | schematic sectional drawing which shows the container provided with the heater and the cooling module.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Container 2 Heater 2a Ceramic base body 2b Heat generating body circuit 2c Insulating layer 3 Supporting foot part 4 Cooling module 5 Lifting means

Claims (8)

  A container for housing and supporting a heater for heating a semiconductor, wherein the heater is installed in the opening thereof, and the surface roughness of the constituent member is 10 μm or less in Ra.   The surface heater of the said structural member is 5 micrometers or less in Ra, The container for semiconductor heaters of Claim 1 characterized by the above-mentioned.   The container for a semiconductor heater according to claim 1, wherein the constituent member is a metal.   The semiconductor heater according to any one of claims 1 to 3, wherein the heater is a ceramic heater mainly containing any one of aluminum nitride, silicon nitride, silicon carbide, aluminum oxide, and aluminum oxynitride. Heater container.   The container for a semiconductor heater according to claim 4, wherein a main component of the ceramic heater is aluminum nitride.   The container for a semiconductor heater according to claim 1, further comprising a cooling module together with the heater.   The container for a semiconductor heater according to claim 6, wherein a fluid can flow through the cooling module. A semiconductor manufacturing apparatus comprising a container for a semiconductor heater that accommodates and supports the heater according to claim 1.

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