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GB1530948A - N-doped silicon crystals - Google Patents

N-doped silicon crystals

Info

Publication number
GB1530948A
GB1530948A GB4825376A GB4825376A GB1530948A GB 1530948 A GB1530948 A GB 1530948A GB 4825376 A GB4825376 A GB 4825376A GB 4825376 A GB4825376 A GB 4825376A GB 1530948 A GB1530948 A GB 1530948A
Authority
GB
United Kingdom
Prior art keywords
nov
doped silicon
profile
silicon crystals
monocrystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4825376A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2552621A external-priority patent/DE2552621C3/en
Priority claimed from DE19752553362 external-priority patent/DE2553362C2/en
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1530948A publication Critical patent/GB1530948A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)

Abstract

1530948 Making an n-type Si monocrystal SIEMENS AG 19 Nov 1976 [24 Nov 1975 27 Nov 1975] 48253/76 Heading G6P [Also in Division H1] An n-type Si monocrystal having a "dishshaped" profile of resistivity across its crosssection (see Fig. 2) is made by bombardment with neutrons to produce phosphorus atoms by the reaction:- under conditions such as to produce the desired profile. This may be achieved by virtue of the initial doping profile of the body, or by one of a number of different masking techniques disclosed in the Specification.
GB4825376A 1975-11-24 1976-11-19 N-doped silicon crystals Expired GB1530948A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2552621A DE2552621C3 (en) 1975-11-24 1975-11-24 Process for the production of n-doped silicon single crystals with a plate-shaped profile of the specific resistance in the radial direction
DE19752553362 DE2553362C2 (en) 1975-11-27 1975-11-27 Process for the production of n-doped silicon single crystals with a plate-shaped profile of the specific resistance in the radial direction

Publications (1)

Publication Number Publication Date
GB1530948A true GB1530948A (en) 1978-11-01

Family

ID=25769639

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4825376A Expired GB1530948A (en) 1975-11-24 1976-11-19 N-doped silicon crystals

Country Status (4)

Country Link
JP (1) JPS5936819B2 (en)
DK (1) DK525276A (en)
FR (1) FR2332055A1 (en)
GB (1) GB1530948A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2183092A (en) * 1985-11-12 1987-05-28 Sony Corp Irradiating silicon crystals used for solid state image devices
RU2145128C1 (en) * 1998-03-19 2000-01-27 Закрытое акционерное общество "ЭЛЛИНА-НТ" Method for producing n-type nuclear-doped silicon (options)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62257739A (en) * 1986-04-30 1987-11-10 Toshiba Ceramics Co Ltd Silicon wafer and selector thereof
US10468148B2 (en) 2017-04-24 2019-11-05 Infineon Technologies Ag Apparatus and method for neutron transmutation doping of semiconductor wafers

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2183092A (en) * 1985-11-12 1987-05-28 Sony Corp Irradiating silicon crystals used for solid state image devices
GB2183092B (en) * 1985-11-12 1990-04-18 Sony Corp Solid-state image pick-up device with uniform distribution of dopant therein and production method therefor
AT399420B (en) * 1985-11-12 1995-05-26 Sony Corp METHOD FOR PRODUCING A SOLID-IMAGE IMAGING DEVICE
RU2145128C1 (en) * 1998-03-19 2000-01-27 Закрытое акционерное общество "ЭЛЛИНА-НТ" Method for producing n-type nuclear-doped silicon (options)

Also Published As

Publication number Publication date
FR2332055B3 (en) 1980-10-17
JPS5936819B2 (en) 1984-09-06
DK525276A (en) 1977-05-25
JPS5265661A (en) 1977-05-31
FR2332055A1 (en) 1977-06-17

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee