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FR2959352B1 - Structure nanometrique absorbante de type mim asymetrique et methode de realisation d'une telle structure - Google Patents

Structure nanometrique absorbante de type mim asymetrique et methode de realisation d'une telle structure

Info

Publication number
FR2959352B1
FR2959352B1 FR1053134A FR1053134A FR2959352B1 FR 2959352 B1 FR2959352 B1 FR 2959352B1 FR 1053134 A FR1053134 A FR 1053134A FR 1053134 A FR1053134 A FR 1053134A FR 2959352 B1 FR2959352 B1 FR 2959352B1
Authority
FR
France
Prior art keywords
absorbent
making
nanometric
mim type
asymmetric mim
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1053134A
Other languages
English (en)
Other versions
FR2959352A1 (fr
Inventor
Stephane Collin
Jean-Luc Pelouard
Fabrice Pardo
Anne-Marie Haghiri-Gosnet
Philippe Lalanne
Christophe Sauvan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR1053134A priority Critical patent/FR2959352B1/fr
Priority to US13/642,953 priority patent/US20130092211A1/en
Priority to EP11717981A priority patent/EP2561550A2/fr
Priority to PCT/EP2011/056028 priority patent/WO2011131586A2/fr
Publication of FR2959352A1 publication Critical patent/FR2959352A1/fr
Application granted granted Critical
Publication of FR2959352B1 publication Critical patent/FR2959352B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/003—Light absorbing elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/22—Absorbing filters
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters
    • G02B5/284—Interference filters of etalon type comprising a resonant cavity other than a thin solid film, e.g. gas, air, solid plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
FR1053134A 2010-04-23 2010-04-23 Structure nanometrique absorbante de type mim asymetrique et methode de realisation d'une telle structure Expired - Fee Related FR2959352B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1053134A FR2959352B1 (fr) 2010-04-23 2010-04-23 Structure nanometrique absorbante de type mim asymetrique et methode de realisation d'une telle structure
US13/642,953 US20130092211A1 (en) 2010-04-23 2011-04-15 Asymmetric mim type absorbent nanometric structure and method for producing such a structure
EP11717981A EP2561550A2 (fr) 2010-04-23 2011-04-15 Structure nanometrique absorbante de type mim asymetrique et methode de realisation d'une telle structure
PCT/EP2011/056028 WO2011131586A2 (fr) 2010-04-23 2011-04-15 Structure nanometrique absorbante de type mim asymetrique et methode de realisation d'une telle structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1053134A FR2959352B1 (fr) 2010-04-23 2010-04-23 Structure nanometrique absorbante de type mim asymetrique et methode de realisation d'une telle structure

Publications (2)

Publication Number Publication Date
FR2959352A1 FR2959352A1 (fr) 2011-10-28
FR2959352B1 true FR2959352B1 (fr) 2014-02-21

Family

ID=43415256

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1053134A Expired - Fee Related FR2959352B1 (fr) 2010-04-23 2010-04-23 Structure nanometrique absorbante de type mim asymetrique et methode de realisation d'une telle structure

Country Status (4)

Country Link
US (1) US20130092211A1 (fr)
EP (1) EP2561550A2 (fr)
FR (1) FR2959352B1 (fr)
WO (1) WO2011131586A2 (fr)

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FR2971594B1 (fr) * 2011-02-14 2017-03-10 Centre Nat Rech Scient Modulateur terahertz
US9606414B2 (en) 2012-04-16 2017-03-28 Duke University Apparatus and method for providing a selectively absorbing structure
FR2996356B1 (fr) 2012-09-28 2015-08-07 Centre Nat Rech Scient Composant photovoltaique a fort rendement de conversion
KR101902920B1 (ko) 2012-12-11 2018-10-01 삼성전자주식회사 광대역 표면 플라즈몬 공진기를 포함하는 적외선 검출기
US20140264346A1 (en) * 2013-03-15 2014-09-18 Seagate Technology Llc Integrated photodiode
DE102013109143A1 (de) * 2013-08-23 2015-02-26 Nts Nanotechnologysolar Photozelle, insbesondere Solarzelle sowie Verfahren zum Herstellen einer Photozelle
CN103808691A (zh) * 2014-02-19 2014-05-21 中国科学院半导体研究所 非对称Au粒子阵列和FP腔耦合的折射率传感器
US9778183B2 (en) 2015-08-20 2017-10-03 Industrial Technology Research Institute Sensing chip
JP6982008B2 (ja) * 2016-06-03 2021-12-17 アメリカ合衆国 超薄型、可撓性、耐放射線性の日陰対応光起電力装置
FR3060240A1 (fr) * 2016-12-08 2018-06-15 Commissariat A L'energie Atomique Et Aux Energies Alternatives Structure de conversion thermophotovoltaique
US11714293B2 (en) * 2019-06-27 2023-08-01 Lumileds Llc Speckle reduction in VCSEL arrays
CN110196464B (zh) * 2019-07-01 2022-07-29 江南大学 一种实现超宽带光吸收的方法以及一种复合微结构
CN110687622B (zh) * 2019-10-14 2022-06-14 江西师范大学 一种偏振可调光谱双重差异性响应的完美光学吸波器及其制备方法
CN110703371B (zh) * 2019-10-14 2022-08-26 江西师范大学 半导体超表面电磁波吸收器及其制备方法
CN110727126B (zh) * 2019-11-18 2020-10-02 华中科技大学 一种基于石墨烯电调谐的双窄谱带近红外吸收器
TR201921481A2 (tr) * 2019-12-25 2021-07-26 Bilkent Ueniversitesi Unam Ulusal Nanoteknoloji Arastirma Merkezi Bi̇r dönüştürme aparati ve bunu i̇çeren bi̇r ekran
CN111300163B (zh) * 2020-02-29 2021-03-02 湖南大学 一种离子束抛光的大面积单片集成Fabry-Pérot腔滤色器制造方法
CN111580197B (zh) * 2020-05-17 2022-05-17 桂林电子科技大学 一种横向mimi格点阵等离激元共振吸收器
CN111552014B (zh) * 2020-05-17 2022-04-29 桂林电子科技大学 一种横向mim格点阵等离激元吸收器
CN111929753A (zh) * 2020-06-22 2020-11-13 东南大学 一种兼容cmos工艺的宽波段超材料吸收器
EP4080588A1 (fr) * 2021-04-23 2022-10-26 Pixquanta Limited Dispositif de détection de rayonnement infrarouge à ondes courtes
CN114389046B (zh) * 2022-01-05 2023-05-30 电子科技大学 兼具选择性吸收及波束异向反射功能的红外电磁周期结构
CN114545536B (zh) * 2022-01-26 2023-08-15 宁波大学 一种基于二维过渡金属硫化物的光吸收增强结构和方法
CN115175551A (zh) * 2022-07-12 2022-10-11 中国人民解放军国防科技大学 一种红外制导激光吸收薄膜
US11828911B1 (en) * 2022-11-08 2023-11-28 Northeast Normal University Metamaterial absorber integrated long-wave infrared focal plane array (LWIRFPA)
EP4451345A1 (fr) * 2023-04-18 2024-10-23 Valstybinis moksliniu tyrimu institutas Fiziniu ir technologijos mokslu centras Augmentation de la réponse d'un dispositif à semi-conducteur quantique par utilisation d'une structure de métamatériau

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2842945B1 (fr) * 2002-07-25 2005-11-11 Centre Nat Rech Scient Dispositif de photodetection de type msm et a cavite resonnante comprenant un miroir a reseau d'electrodes metalliques
JP4899061B2 (ja) * 2005-03-18 2012-03-21 国立大学法人北海道大学 センシングデバイス、センシング装置およびセンシング方法
US8866007B2 (en) * 2006-06-07 2014-10-21 California Institute Of Technology Plasmonic photovoltaics
US8482197B2 (en) * 2006-07-05 2013-07-09 Hamamatsu Photonics K.K. Photocathode, electron tube, field assist type photocathode, field assist type photocathode array, and field assist type electron tube
WO2008072688A1 (fr) * 2006-12-14 2008-06-19 Nec Corporation Photodiode
EP2109147A1 (fr) * 2008-04-08 2009-10-14 FOM Institute for Atomic and Molueculair Physics Cellule photovoltaïque avec nano-structures à génération de résonance à plasmons de surface
EP2139045A4 (fr) * 2008-04-09 2010-05-05 Ooo Novye Energet Tehnologii Convertisseur de rayonnement electromagnetique
JP5077109B2 (ja) * 2008-07-08 2012-11-21 オムロン株式会社 光電デバイス

Also Published As

Publication number Publication date
WO2011131586A3 (fr) 2012-05-03
EP2561550A2 (fr) 2013-02-27
US20130092211A1 (en) 2013-04-18
FR2959352A1 (fr) 2011-10-28
WO2011131586A2 (fr) 2011-10-27

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Year of fee payment: 7

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Effective date: 20171229