FR2879188A1 - METHOD AND INSTALLATION FOR PROCESSING A GLASS SUBSTRATE INCORPORATING A MAGNETRON LINE AND A DEVICE GENERATING ATMOSPHERIC PRESSURE PLASMA. - Google Patents

Abstract

- Process for the continuous treatment of a glass substrate whose dimension perpendicular to the direction of movement along said installation is greater than 1.5 m, said method being characterized in that it comprises inter alia: a step a magnetron line for effecting the deposition of successive thin layers, said line comprising a succession of sections, each section comprising at least one cathode made of a material or a precursor of the material to be deposited and operating according to the principle of sputtering under the action of a plasma generated by electric discharge in a plasma gas, - at least one step using an atmospheric plasma device, ie generating and allowing a plasma treatment in a gas substantially at atmospheric pressure.- Installation allowing the implementation of the process

Description

METHOD AND INSTALLATION FOR PROCESSING A GLASS SUBSTRATE

  INCORPORATING A MAGNETRON LINE AND A DEVICE GENERATING A

ATMOSPHERIC PRESSURE PLASMA.

  The present invention relates to a method and an installation in the technical field of the surface treatment of a glass substrate, said treatment consisting for example in the deposition of one and preferably several successive thin layers of, for example, mineral compounds such as oxides or nitrides or in the preparation of the substrate surface for layer deposition (s). It is more particularly intended for an industrial installation and a method comprising a deposition of layers on an industrial scale, ie on flat glass substrates, typically the dimension perpendicular to the direction of movement along the installation is greater at 1 m, preferably at 1.5 m or even 2 m. The substrates thus coated at the outlet of the present installation and / or having undergone the present process can present according to the invention a stack of layers of different functionalities (solar control, low-emissive, electromagnetic shielding, heating, hydrophilic, hydrophobic, photocatalytic) , layers modifying the level of reflection in the visible (anti-reflection or mirror layers) incorporating an active system (electrochromic, electroluminescent, photovoltaic).

  It is known that the coating of a substrate by one or more thin vapor-phase layers of a given material can be carried out according to several different techniques.

  According to a first pyrolysis method, the precursors of the products to be deposited, supplied in gas, liquid or solid form are decomposed on the hot substrate (T> 500 C). In the case of gaseous precursors, the method is generally referred to as AP-CVD (Atmospheric Pressure Chemical Vapor Deposition).

  According to a second method, the so-called magnetron methods are used which consist in carrying out the sputtering deposition of the material or of a precursor of the material to be deposited. The deposit is further promoted by the application of a magnetic field. The magnetron device comprises a metal or ceramic target placed on an electrode called a cathode on which a voltage or a current is applied, thereby initiating an electric discharge in a plasma created by ionization of a gas near the target, resulting in an ion bombardment that tears (sprays) the atoms of the target that are then projected onto the substrate. This technique requires working in a secondary vacuum (pressure typically between 2 and 10.10-3 mbar). This technique deposits layers of very controlled thickness and composition on a cold substrate (approximately 30 ° C.). This method also has the advantage of being able to be used in recovery of the substrate, that is to say on a previously formed substrate.

  An exemplary embodiment of such a device is for example described in US Patent 6,214,183. Such a method is in particular implemented in the case where the stoichiometry and the thickness of the layers must be very controlled, for example for the manufacture of optical or interference filters in the infrared.

  Such a magnetron device has been successfully applied by the Applicant to the deposition of a succession of thin layers on very large glass substrate plates, typically whose dimension perpendicular to the direction of movement along the device is greater than 1 m, preferably 1.5 m or even 2 m.

  More particularly, it is possible according to this technique to deposit a succession of thin layers, the thickness of which is most often of the order of a few nanometers or a few tens of nanometers on a large substrate moving on rollers, by accolating several magnetron devices arranged in sections. Each section may contain a target cathode of different or identical chemical nature sprayed by a plasmagenic gas which may be of different types (oxidizing, reducing, nitride). By implementing a magnetron line as defined, it is possible to obtain stacks of up to 10 to 20 different layers or more.

  Another method, known in the field of microelectronics, called PE-CVD (Plasma Enhanced Chemical Vapor Deposition) has been described. According to this method, in place of the use of a target made of the material to be deposited, precursors of the material to be deposited are injected in the form of a gas and decomposed in the electric discharge of a plasma. This process is generally carried out at pressures of the order of 10 mTorr to 500 mbar (1Torr = 133 Pa, 1 bar = 0.1 MPa). The substrate is generally used at room temperature or heated at relatively low temperatures (for example below 350 ° C) to ensure the mechanical properties and adhesion of the deposited layer. This technique can be used, because of the moderate temperature imposed on the substrate, for the coating of temperature sensitive substrates, for example made of plastic polymers. A process of this nature is described, for example, in application EP 0 149 408.

  The magnetron and PE-CVD methods have the major disadvantage of requiring a vacuum installation. As a result, the industrial size installations, that is to say for treating glass substrates whose dimension perpendicular to the direction of movement of the glass sheet in the vacuum chamber is typically greater than 1 m, 1.5 m or even 2 m are at first very difficult to achieve and / or modify. Thus, the construction of a magnetron line requires a heavy investment (frame, many cathodes, a cathode feed system) and is restricted to a given configuration in the succession of operations achievable on the substrate. In addition, each maintenance operation requires breakage of the vacuum and long and expensive pumping operations for its restoration. In view of the foregoing, it is understood that the flexibility of such a line is limited, particularly with respect to a possible change in the number and nature of the layers to be deposited or the treatment conditions imposed on the glass substrate not provided for. initially. In addition, the initial investment and maintenance of the line are extremely expensive and the depreciation of such an installation requires high productivity and a minimum of interventions or stops on the magnetron line itself, which limits as many possible modulations or changes in the nature of the layers and / or glass product finally obtained. One of the aims of the present invention is to provide means for modulating in a simple and economical way the nature and / or the disposition of the successive layers deposited on the glass substrates at the end of line.

  Very recently, many processes and installations have been described that make it possible to work according to the principles of PE-CVD but at atmospheric pressure, that is to say that the plasma is generated in a gas substantially at atmospheric pressure. These processes are often referred to as AP-PE-CVD (Atmospheric Pressure - Plasma Enhanced Chemical Vapor Deposition). For the sake of simplicity, in the rest of the description, the term AP or plasma at atmospheric pressure will be used to denote such methods or technologies.

  According to the AP technology, the deposition can be carried out on substrates at a low temperature, typically less than 400 ° C., or even 350 ° C. or else 250 ° C., which can thus make it possible to deposit layers on a substrate of relatively low melting point or softening point, for example a polymer as illustrated by the application EP 622 474.

  AP technology has many applications since it makes it possible, among other things, to deposit layers of mineral materials (oxides, nitrides, silicon carbide or other elements, metallic deposits), organic or organo-mineral hybrids, etching , cleaning and surface activation, etc. It should be noted that this technology has the advantage of allowing the deposition of materials known to be difficult to deposit by magnetron or evaporation techniques, for example organo-mineral hybrids.

  In the case of a large glass substrate as defined above, however, the application of AP technology is not known.

  The AP technologies can be implemented according to two different techniques: According to a first technique, for example described in application EP 0 575 260, the active species of the plasma are first generated in a chamber via the electric discharge and are then blown to the outside of the enclosure and projected with the precursor on the surface of the substrate to be treated. In this case, we generally speak of remote plasma.

  According to a second technique, for example described in patent FR 2 782 837, the surface of the substrate is directly brought into contact with the plasma created by ionization of the gas under the effect of the discharge. In this case we speak of plasma in situ >>. According to this technique, the electric discharges carried out at atmospheric pressure can be of two types: filament discharges, ie generated in the form of microchannels of current typically of a hundred microns in diameter, developing randomly in the space and time between the two electrodes, - homogeneous discharges, ie for which there is only one discharge channel on the whole surface of the electrodes and in which the chemical species excited are regularly distributed on the surface to be treated.

  Patent FR 2 782 837 describes a method and device in which a homogeneous discharge is produced in a plasma created in a plasmagenic gas, for example comprising nitrogen. US 5 456 972 and EP 0 346 055 describe a homogeneous discharge at atmospheric pressure in which a homogeneous discharge is produced in a plasma created in a neutral gas such as helium.

  All AP technologies as mentioned in this specification or known in the art can be used according to the present invention. The choice of one or the other of these technologies will be carried out in particular according to the goal and the advantages known or deduced by routine tests of each one of them. Thus, certain AP technologies will be preferred and / or chosen by those skilled in the art for a particular purpose while others will be preferentially used when another application is sought. Examples of such applications are given in the following non-limiting embodiments of the invention.

  Examples of AP technologies within the scope of the invention, remote or in situ, filamentous discharge or homogeneous discharge, are for example described in patent applications or patent US 5,961,772, WO 2002/073666, WO 2003/046970 , US 2002/129902, US 2000/012281, US 6,262,523, WO 99/20809, US 6,118,218, US 6,441553, US 2002/0195950, EP 1 340 838, EP 1 265 268, EP 0 809 275, EP 0 575 260, WO 2004/028220, EP 1 403 902, EP 1 381 257, EP 1 383 359, EP 0 699 954, EP 0 821 273, EP 1 029 702, US 2003/232136, FR 2 782 837, FR 2 806 324, US 5,529,631, US 5,543,017, WO 0112350, US 5,414,324.

  According to the invention, it has now been discovered that the combination or the combination in the same process of an AP technology device and a magnetron line for the treatment of large glass substrates could have substantial effects and advantages, in particular in improving or even optimizing certain properties of the glass product finally obtained.

  By association, it is understood in the sense of the present description that the magnetron line and the AP device are used in two distinct steps, not necessarily successive, of a method of manufacturing a glass product. By combination, it is understood in the sense of the present description that the magnetron line and the AP device are used during two successive stages of the process and are preferably directly contiguous to one another, without external air intake. or intermediate exposure to outside air.

  More specifically, the present invention relates to a process for the continuous treatment of a glass substrate whose dimension perpendicular to the direction of movement along said installation is greater than 1.5 m, said method being characterized in that it comprises inter alia: a step using a magnetron line for depositing successive thin layers, said line comprising a succession of sections, each section comprising at least one cathode made of a material or a precursor of the material to be depositing and operating according to the principle of cathodic sputtering under the action of a plasma generated by electric discharge in a plasmagenic gas, at least one step using an atmospheric plasma device, that is to say generating and allowing a treatment with a plasma in a gas substantially at atmospheric pressure.

  According to a possible mode, the step using the magnetron line and at least one step using an atmospheric plasma device are performed successively, that is to say without intermediate step.

  For example, said magnetron line and said atmospheric plasma device or devices are contiguous.

  The plasma treatment step may comprise or consist of an etching, a physico-chemical method, a surface preparation such as cleaning or surface activation.

  For example, the plasma treatment step comprises or consists of a preparative surface treatment of at least a portion of the surface of the substrate for the deposition of successive thin layers by the magnetron line.

  The plasma treatment step may also comprise or consist in the elimination of the organic impurities for example present on the surface of the substrate and / or in the removal of the water adsorbed on the surface of the substrate, in particular after a preliminary step of washing.

  According to a first possible mode, the plasma treatment step comprises a first deposition of a first thin layer so as to prepare the surface of the substrate for the deposition of successive thin layers by the magnetron line.

  According to another embodiment, the plasma treatment comprises a protective treatment of the stack of successive thin layers obtained during the step using the magnetron line. For example, said protective treatment consists of the application of a sacrificial or non-sacrificial protective layer of a material for example comprised in the group consisting of water-soluble and / or thermodegradable polymers of the polyesters, polyvinyl alcohols type, polyacrylamides, derived from starch, cellulose, thermodegradable insoluble polymers of the aliphatic polyolefin, polyvinyl, acrylate type, hydrophobic and / or oleophobic fluorinated polymers, which are insoluble in water and which have a good teflon type thermal stability, the carbon-based (DLC), anti-scratch, hydrophobic and / or oleophobic layers, the organo-mineral hybrid layers, ie combining a metal and an organic function incorporated in the layer, for example a function hydrophobic, mineral layers of the oxides, nitrides, carbides, metals or a mixture thereof such as oxynitrides, oxycarbides , mixed oxides.

  In a different way, at least one atmospheric plasma device may be disposed either at the input of the magnetron line or at the output of the magnetron line such that at least one thin layer is deposited on the face of the glass substrate containing the magnetron line. tin to obtain glass substrates covered by thin layers on both sides.

  The invention also relates to an installation for the continuous treatment of a glass substrate whose dimension perpendicular to the direction of movement along said installation is greater than 1.5 m, said installation comprising in combination: a magnetron line for the deposition of successive thin layers, comprising a succession of sections, each section comprising at least one cathode made of a material or a precursor of the material to be deposited and operating according to the principle of cathode sputtering under the action of a plasma generated by electric discharge in a plasma gas, an atmospheric plasma device, ie generating a plasma in a gas substantially at atmospheric pressure.

  Preferably, the atmospheric plasma device (s) are lined up with the magnetron line without any return of outside air or intermediate exposure to the outside air.

  The atmospheric plasma device may be of the remote plasma or plasma in situ type.

  The atmospheric plasma device may be of the type generating filament discharges in said plasma or of the type generating homogeneous discharges in said plasma.

  According to one embodiment of the installation, the atmospheric plasma device 10 is disposed upstream of the magnetron line, in the treatment direction of the glass substrate.

  According to another mode, the atmospheric plasma device is disposed downstream of the magnetron line, in the treatment direction of the glass substrate.

  The plant according to the invention may comprise a combination of one or more atmospheric plasma devices in combination with a magnetron line.

  According to some implementations, at least one plasma device is arranged with respect to the face of the glass substrate containing tin.

  Finally, the invention relates to the application of the installation or method described above to the manufacture of glass substrates treated on the surface by deposition of thin layers giving them at least one function included in the group consisting of solar control, low -emissive, electromagnetic shielding, heating, hydrophilic, hydrophobic, photocatalytic, the modification of the level of reflection in the visible (anti-reflection or mirror), the incorporation of an active system (electrochromic, electroluminescent, photovoltaic).

  A method and an installation comprising the combination or the combination between a magnetron line for manufacturing a large flat glass product and an AP device according to the invention has many advantages.

  In particular, the invention can be implemented according to different combinations or combinations between these two elements, each of them being able to give rise to specific advantages.

  In general, it is known that a magnetron line operating under vacuum as previously described is difficult to modify and therefore has only a very limited flexibility of its operating conditions. In particular, during the construction of the line, the number and the nature of the cathode portions (sections) constituting the magnetron line are defined according to the number and nature of the successive layers to be applied to the substrate to obtain a glass product of which the stacking of layers is well determined. It has now been discovered that the association and more particularly the combination between a magnetron line and an AP device, that is to say generating a plasma at atmospheric pressure in a given gas, makes it possible to improve in an astonishing manner the flexibility obtained for the process or installation, taken as a whole. Said gas most often comprises mainly a gas comprised in the group consisting of argon, helium or nitrogen or a mixture of these gases and additives which may be oxidizing agents, reducing agents, monomers or precursors of the material to be deposited etc.

  For example, such an association or combination may make it possible to introduce onto the substrate a layer of a material whose deposition is difficult or impossible by the magnetron method (for example organic, organo-mineral or nanocomposite layers (based on nanoparticles). ).

  In particular, said combination or combination may according to the invention be carried out in different ways depending on the purpose and this, either depending on the initial characteristics of the substrate to be treated, or depending on the desired properties of the final glass product is to say of the glass substrate finally obtained.

  According to the preferred embodiment of the invention in which the two elements are combined, the device AP may according to the invention be arranged at different locations with respect to said line, each particular arrangement making it possible to improve the overall operation of the magnetron line. even the quality or characteristics of the glass product finally obtained.

  In particular, the original magnetron line does not need in this case to be substantially modified and obtaining electrical discharges at atmospheric pressure has the advantage of not requiring the use of bulky devices and additional expensive to create a secondary vacuum in the enclosure in which the discharge is generated and secondly to allow continuous processing compatible with the productivity requirements of the magnetron line. In addition, the AP technology has the advantage of operating at a relatively low temperature, typically a temperature under which the glass substrate is not deformed, which thus allows successive rapid rise and fall in temperature without risk of deformation, at the same time. atmospheric pressure. In addition, the processes can be easily activated by preheating the introduced gases, an operation that is difficult to perform in enclosures under very low pressure. In the case of a large glass substrate as defined above, the application of AP technology is not known.

  The embodiments of the invention which follow, non-limiting, will better understand the various advantages related to different possibilities of carrying out said combination.

  According to a first embodiment of the invention, an AP device may be arranged upstream of the magnetron line.

  According to an exemplary embodiment of this first embodiment, the atmospheric plasma device is configured according to any technique known to those skilled in the art to perform a preparative surface treatment of at least a portion of the surface of the substrate for subsequent deposition. successive thin layers by the magnetron line. The device is advantageously disposed at the outlet of the washing machine used to prepare the glass substrate for deposition of thin layers and attached without recovery or exposure to outside air at the magnetron line. The term "bonded" is preferably understood in the sense of the present description to mean that the connection between the two devices is such that a controlled atmosphere, for example nitrogen, is maintained between them.

  Such a combination advantageously makes it possible to adequately prepare the surface of the substrate before depositing: the glass is freed from residual defects or impurities generated or not eliminated by washing. The discharge at atmospheric pressure makes it possible to generate an atmospheric plasma, one of whose functions may be to remove any trace of impurities, for example of organic nature, present on the surface of the substrate. In particular, the adhesion of the layer to the glass substrate and its durability can be improved and the stacking defects at the line exit, after processing or on site, can be reduced.

  The reaction chemistry can be adapted according to the nature of the soil to be removed (for example oxidizing plasma treatment 02 for organic fouling, fluorinated plasma for silica-based minerals).

  In addition, the plasma treatment makes it possible to eliminate substantially all, or even all, of the water adsorbed on the surface of the glass substrate, without the possibility of subsequent re-deposition on the surface of the substrate, thereby rendering it very hydrophilic, the plasma discharge taking place by definition in a dry atmosphere of gas and the AP device is then directly attached to the magnetron line, which prevents any contact of the hydrophilic surface with the humidity of the air.

  According to another exemplary embodiment of this first mode, the atmospheric plasma device disposed at the input of the magnetron line is configured to deposit a first thin layer on the surface of the substrate, making it possible to prepare the substrate for the deposit. by the magnetron line of a succession of thin layers whose number can for example be between 10 and 20. This first layer or under layer can for example be used to standardize the surface of the glass and thus to overcome the history of the glass substrate at a lower cost and without having to use and / or modify a cathode location of the magnetron line. This underlayer is advantageously chosen to have the same refractive index as the glass substrate and may for example consist of a material comprised in the group consisting of silica-based materials such as oxycarbides or silicon oxynitrides or materials. comprising a suitable mixture of a higher index compound and a lower index compound than glass, such as silicas associated with alumina or with oxides of titanium, zinc, tin, etc. A particularly advantageous embodiment of the invention consists of a deposition by the atmospheric plasma device of a first layer or sublayer of silica on the glass substrate. As illustrated by Examples 6 and 7, it has now been discovered that the AP methods allow the deposition of such an underlayer without degrading the characteristics of the glass product finally obtained. In addition, the use of an AP source allows, with a small footprint, to modify and adapt as needed the deposition rate of said sub-layer, for example by changing the size of the plasma source. Deposition of this sub-layer by AP process, replacing the deposition of this same layer by magnetron, thus improves the productivity of the entire installation.

  According to a second embodiment of the invention, a device generating a plasma at atmospheric pressure may be disposed at the output of the magnetron line, ie after the deposition of the stack of thin layers on the glass substrate.

  For example, the atmospheric plasma device disposed at the output of the magnetron line is configured to perform a deposit of a protective layer which covers the stack.

  The layers of protection can be temporary, ie removed before or at the time of installation on the site. The layers are, for example, soluble in water or in a solvent or thermally degraded in forming or quenching operations. These layers being intended to be removed before final use, their presence generally does not require optical adjustment of the stacks.

  The protective layers may in another embodiment be durable, that is to say that they survive after installation on site. They may then require an optical adjustment of the stacks. In this case, being in line allows a quick adjustment, live stacks, an optical measurement that can be integrated at the output of or in the line.

  By way of example, the protective layers may be of the type: water-soluble (or thermodegradable) polymers, polyesters, polyvinyl alcohols, polyacrylamides, starch derivatives, cellulose derivatives, etc.

  The corresponding monomers initially introduced into the AP device are in this case for example of the acrylic acid type, acids, alcohols, amines, etc. Insoluble polymers (thermodegradable): aliphatic polyolefins, polyvinyls, acrylates, etc.

  The corresponding monomers initially introduced into the AP device are in this case for example of the alkenes type (ethylene, propylene, etc.) or based on vinyl compounds, acrylates, methacrylates, etc.

  Teflon-type fluorinated polymers (hydrophobic and / or oleophobic, insoluble in water and having good thermal stability).

  The corresponding monomers initially introduced into the AP device are in this case for example fluorinated monomers (CF4, C2F6, CF3CFCF2, etc.) or fluorinated hydrocarbons (CHF3, etc.), generally in the presence of H2.

  Carbon-based (DLC) layers: anti-scratch (low coefficient of friction), hydrophobic, oleophobic.

  The corresponding monomers initially introduced into the AP device are in this case for example of the hydrocarbon type (alkanes: CH4, alkenes: C2H4, acetone, etc.) in addition with hydrogen.

  Organo-mineral hybrid layers, ie combining a metal and an organic function incorporated in the layer (for example a hydrophobic function).

  The corresponding monomers initially introduced into the AP device are in this case, for example, of the organometallic or organosilicon type (for example HMDSO: hexamethyldisiloxane or any other organosilicon precursor), possibly in combination with organic or fluorinated precursors (for example a TEOS (tetraethoxysilane) combination). and CF 4) or use of fluorinated silane mono-recursors, for example of the formula CF 3 (CF 2) 6 (CH 2) 2 SiCl 3.

  Mineral layers of the oxides, nitrides, carbides, metals or a mixture thereof type such as oxynitrides, oxycarbides, mixed oxides.

  The corresponding precursors initially introduced into the AP device are in this case of the organometallic or metal or silicon halide type, optionally in the presence of oxidants (O 2, CO 2, NOx, etc.), reducing agents (H 2, CH 4, etc.). ), organic compounds (alcohols ...) or water.

  This mode makes it possible, for example, to deposit a protection or transformation layer that can be sacrificial. Such a sacrificial layer may advantageously be either soluble in a solvent which is inert with respect to the different layers constituting the stack or easily degradable by a low temperature heat treatment. The deposition of such a layer thus advantageously allows the transport, handling of the glass product or even various heat treatments such as quenching without risk of degradation of the structure in thin layers, for example due to contact with the rolls, the presence splines etc. This surface layer may, for example, have protective functions with respect to possible scratches, adsorption of water on the surface of the layers, corrosion of the layers due to the presence of water, etc. According to a third embodiment, a device generating an atmospheric pressure plasma may be arranged in such a way that a thin layer is deposited on the face of the glass substrate containing tin, that is to say on the opposite side to that intended to receive the thin layer deposition by magnetron, either at the input of the magnetron line or at the output of the magnetron line. It is thus possible to obtain in this way at a lower cost a final product whose two faces are coated with thin layers. For example, it will be possible in this way to associate two functions on the same glass substrate, such as a photocatalytic function on the face 1 of the substrate, that is to say on your face intended to be positioned outside a building and an antifouling function on the face 2 of the substrate, that is to say on the face intended to be positioned inside a building or on the internal face of a double glazing or a laminated.

  Unlike the magnetron, the Plasma device can advantageously, due to the absence of a vacuum enclosure, be applied without constraint to configurations in which the surface of the substrate to be treated is in a high position relative to the zone of plasma production.

  Without departing from the scope of the invention, it will also be possible to have a succession of AP devices in view of said tin face so as to also obtain on this face a stack of thin layers.

  Of course, the present invention is however not limited to the combination examples which have just been described between a magnetron line and an AP device. In particular, all the possible configurations of the present combination in which the AP technology is implemented in a known application, such as, for example, the deposition of organic or inorganic layers, the deposition of organomineral layers or nanocomposites for example based on nanoparticles. , etching, surface preparation such as cleaning or surface activation should be considered within the scope of the present invention.

  Of course, any possible combination between a magnetron line and one or more atmospheric plasma devices is within the scope of the present invention. In particular, one AP device may be placed upstream of the magnetron line and another downstream of the line in the processing direction of the substrate, each of the devices being in particular chosen and configured according to the desired application (surface preparation , layer deposition, etc.). Similarly, without departing from the scope of the invention and as required, it is possible to combine a magnetron line with AP devices placed on both sides of the glass substrate.

  FIG. 1 very schematically illustrates an example of association between an AP device and a magnetron line.

  The glass substrate 2 to be treated is fed by a conveying system 1 to a first box 3. This first box 3, small in size, comprises an injection system 4 and output 5 of an inert gas, for example N2, which fills the interior of said box and thus isolates a plasma source at atmospheric pressure 6 from the outside air. The source, of known technology, comprises two electrodes connected to a power supply (not shown in FIG. 1), an inlet 7 for the gas in which the plasma is generated at atmospheric pressure and an outlet 8 for the effluents of the plasma treatment. Without this being considered as limiting, the source 6 diagrammatically shown in FIG. 1 here is a remote source. A slot 11 made over the entire length of the source and covering the entire width of the glass substrate 2 allows the passage of a plasma curtain 10 and the deposition on the substrate of a first sub-layer, for example silica. The substrate 2 thus treated is then fed by the conveying system 1 to a magnetron line 9, directly contiguous to the box 3. The magnetron line then allows, in known manner, the deposition of successive layers, in a given order and configuration.

  Of course, the description of the installation that has just been made, with reference to FIG. 1, is only intended to illustrate schematically a possible embodiment of the invention. Other means, well known to those skilled in the art for using plasma technology and / or magnetron technology have not been shown in this description for the sake of clarity and brevity but must nevertheless be considered as understood in this one.

  The invention and its advantages will be better understood on reading the following nonlimiting examples.

  The following examples were made using two apparatuses of different nature: 1) an in situ plasma system illustrated in FIG. 2. This system, used in the laboratory and for the purposes of the present invention, is conforming and representative of the systems known at present for the implementation of atmospheric plasma technology.

  More precisely, the reactor consists of two metal electrodes 101 covered with dielectrics 102. This dielectric is an alumina of thickness equal to 500 μm deposited by plasma spraying (plasma spray) but may also be glass or any other dielectric. The distance between the electrodes can be adjusted between 1 and 10 mm (translation of the upper electrode). The upper electrode is connected to an AC high voltage supply 103. The substrate 10.4 is placed on the lower electrode which can be heated by a heating resistor inserted in the mass of the electrode. The plasmagenic gas and its additives are provided by the nozzle 105 via an injection slot 106 making it possible to ensure a laminar flow of gas. The nozzle 105 may be heated by means of heating resistors inserted in its mass. The effluents are sucked by the slot 107 of the suction system 108. The assembly is placed in a sealed enclosure 109 providing a neutral atmosphere around the reactor.

  The device as just described was implemented exclusively for the purposes of the present examples and will of course, according to the techniques of the art, be suitable for use on an industrial scale when associated with a magnetron line and modified in particular such that the glass substrate can move continuously along such an installation, according to Figure 1. In this case, it will be preferred for the implementation of the invention a arrangement in which the entry and evacuation of gases and additives is perpendicular to the horizontal plane of the installation (atmospheric plasma device + associated magnetron line). Such an arrangement allows in particular a better control of the homogeneity in thickness of the layer possibly deposited.

  2) a remote plasma source currently marketed by SurfX Technologies under the Atomflow reference and described in patents US2002 / 0129902 or its equivalent EP 1 198 610.

  Examples 1 and 2 are intended to show the efficiency of a plasma source at atmospheric pressure in the case where it is used upstream of the magnetron line to prepare a support whose surface is polluted.

Example 1

  In this example, organic soil is removed using the remote plasma source.

  A clean soda-lime glass, ie washed with a surfactant, rinsed and then dried, is subjected to an organic soiling, stearic acid AS (CH3 (CH2) 16COOH). The stearic acid is spin-coated from a drop of 160 μl of a 10 g / l solution of stearic acid. The sample is then subjected to an oxidizing plasma treatment using the Atomflow atmospheric plasma source marketed by SurfX Technologies. The source has a diameter of 5 cm. The plasma gas used is helium. The total flow rate used is 60 slpm (standard liter per minute) with an oxygen concentration of approximately 4.5% by volume. The radiofrequency power (13.56 Mhz) applied is 500W or 300W and the source - substrate distance was set at 3mm. The duration of treatment is 10 seconds. The amount of acid present on the sample is characterized by the monitoring of the CH bonds by FTIR (Infra-Red Fourier Transform) and in particular by the monitoring of the area, normalized with respect to the initial area, of the bands absorption of CH bonds between 29'93 and 2759 cm-1.

Example 2

  In this example, the same organic soil is removed using the previously described in-situ source: The same glass sample undergoes the same stearic acid deposition procedure. The sample is then placed in a dielectric barrier in-situ plasma reactor as described in Figure 2. A microfilament discharge is ignited in nitrogen in the presence of oxygen. The total flow rate used is 10 slpm with 1% volume of di-oxygen. The inter-electrode distance is 2mm and the applied voltage is 5.65kV (RMS) with a frequency of 3kHz for a duration of 120 seconds.

  Table 1 summarizes the performances observed for examples 1 and 2.

  flight. OZ Residual AS duration (s) (% standard area) Remote plasma 4,5% 10 0 (500W) Remote plasma 4,5% 10 11 (300W) In-situ plasma 1% 120 0

Table 1

  The examples show that in all cases a substantial amount or even all organic fouling can be effectively removed by the atmospheric plasma device.

  Examples 3 to 5 illustrate the advantages of prior treatment of the glass support by the atmospheric plasma device in order to improve the adhesion of a first layer to said support.

Example 3

  The effect of treatments with an atmospheric plasma of the deported type on the adhesion of a magnetron layer to the glass was studied by treating by plasma a sample of soda-lime glass previously washed and then by depositing a layer of silver between 10 and 20 nm by magnetron sputtering. The magnetron deposition is carried out at a pressure of 8 bar, under a power of 210 Watts with an argon flow of 180 sccm (cubic centimeters per minute, under standard conditions of pressure and temperature). The sample was then heated to 300 ° C for 60 seconds to make the silver dewaxing.The dewetting of the silver layer is all the more important as the adhesion of this layer to the glass is weak. silver is characterized by a measurement of the blur (H) induced by light scattering on the silver nodules.The blur is even higher than the size of the nodules is large and therefore the dewetting is The measurement of the blur is supplemented by a measurement of the resistance per square of the layer, resistance all the more as the layer is dewaxed.

  The plasma treatment was performed with the Atomflow atmospheric plasma source marketed by SurfX Technologies, 5 cm in diameter previously described. The plasma gas used is helium. The total flow rate used is 90 slpm with an oxygen concentration of 3% and CF4 of about 1%. The RF power (13.56 Mhz) applied is 300W and the source - substrate distance is set at 3mm. The treatment has a duration of 10 seconds.

Example 4

  Example 4 is identical to Example 3 except that the source used is the in-situ plasma source described in FIG. 1. The operating conditions of the micro-filament discharge applied to the substrate are identical to those described in FIG. Example 2, namely: a total flow rate used of 10 slpm with 1% volume of di-oxygen, an inter-electrode distance of 2mm and an applied voltage of 5.65kV (RMS) with a frequency of 3kHz for a duration of 1 minute.

  Example 5 (Comparative): The same operations as those described in Examples 3 and 4 are carried out except that no plasma treatment is performed between washing the glass and depositing the silver layer.

  The different values of the intertwining obtained for Examples 3, 4 and 5 are shown in Table 2: Blur H (%) Rcarred (S20) Before wetting 3% 3 S2 After dewetting with remote plasma treatment 20% 17 S2

(example 3)

  After dewetting with in-situ plasma treatment 15% 9 S2

(example 4)

  After dewetting without plasma treatment 24% 36 S2

(example 5)

Table 2

  Examples 3 to 5 show that the plasma treatment modifies the surface state of the glass substrate and thus facilitates the deposited glass-layer interactions. This results in a less significant dewetting after plasma treatment.

  Examples 6 and 7 illustrate the effectiveness of the present process more particularly when a first layer of silica is to be deposited on the glass substrate.

Example 6

  According to this example, the deposition of the silica layer is carried out by atmospheric plasma.

  A silica layer is deposited using the 5 cm diameter Atomflow source previously described from a TEOS precursor (tetraethoxysilane) and oxygen in a helium stream. The respective partial pressures of the three compounds are He: 738 Torr, 02: 22 Torr, TEOS: 60 mTorr. The power of the source is 300W. The source - substrate distance is 3mm. The substrate is moved at a speed of 1 m / min (meter / minute). The layer is characterized by its refractive index n, its average thickness e (in nm), its deposition rate Vd (in nm.r.min-1) and its composition (FTIR). The FTIR spectrum shows that the layer formed has no carbon residues (absence of CH band) and a low content of hydroxyl groups (bands 3300 and 950 cm-1). The rate of deposition of this layer on the moving substrate is 5 nm.m.min-1, which corresponds to a deposition rate of 100 nm.min- 'if the substrate was immobile.

  Example 7 (Comparative): According to this example, the deposition of the silica layer is carried out by magnetron sputtering.

  A silica layer is deposited by magnetron sputtering on a laboratory line to deposit on substrates 400mm wide. The substrate used is a Planilux glass marketed by Saint-Gobain Glass France, the deposit facing the atmosphere. To achieve this in a single pass, the substrate moves at about 5cm / min. The deposition chamber contains an 8% aluminum doped Si silicon cathode and is subjected to a pressure of 2 bar. The power of the power supply used is 2kWatts. The same characteristics as those provided for Example 5 are shown in Table 3.

  The characteristics of the various tests previously mentioned for each of the products obtained by Examples 6 and 7 are shown in Table 3.

n e Vd (nm) (nm.m.min ')

Example 6 1.44 77 5

Example 7 1.48 90 4.8

Table 3

  Comparison of the data obtained for Examples 6 and 7 shows that the application of a first silica layer can be performed by an atmospheric plasma device arranged upstream of the magnetron line. Surprisingly, the deposition of a silica layer by the AP device used can be performed with a speed comparable to that conventionally known for a magnetron line. The size of the plasma source is also easily adaptable to the deposit to be made, without significantly increasing the size. In particular, the use of a large-sized AP source for layer deposition, instead of magnetron deposition, makes it possible to increase the deposition rate of the layer as required and consequently to improve the productivity of the entire film. 'installation.

Claims (1)

24 CLAIMS   1-process for the continuous treatment of a glass substrate whose dimension perpendicular to the direction of movement along said installation is greater than 1.5 m, said method being characterized in that it comprises inter alia: a step implementing a magnetron line for performing the deposition of successive thin layers, said line comprising a succession of sections, each section comprising at least one cathode made of a material or a precursor of the material to be deposited and operating according to the principle of sputtering under the action of a plasma generated by electric discharge in a plasma-generating gas, at least one step using an atmospheric plasma device, ie generating and allowing treatment with a plasma in a gas substantially at atmospheric pressure.   2- Method according to claim 1, wherein the step using said magnetron line and at least one step using said atmospheric plasma device are performed successively, that is to say without intermediate step.   3. The method of claim 2, wherein said magnetron line and said one or more atmospheric plasma devices are contiguous.   4. Method according to one of the preceding claims, wherein the plasma treatment step comprises an etching, a physico-chemical method, a surface preparation such as cleaning or surface activation.   5. Method according to one of claims 1 to 3 wherein the plasma treatment step comprises a preparative surface treatment of at least a portion of the surface of the substrate for the deposition of successive thin layers by the magnetron line.   6. The method of claim 5, wherein the plasma treatment step comprises the removal of organic impurities for example present on the surface of the substrate and / or the removal of water adsorbed on the surface of the substrate, in particular after a preliminary washing step.   7. The method of claim 5, wherein the plasma treatment step comprises a first deposition of a first thin layer so as to prepare the surface of the substrate for the deposition of successive thin layers by the magnetron line.   8- Method according to one of claims 1 to 3 wherein the plasma treatment comprises a protective treatment of the stack of successive thin layers obtained during the step using the magnetron line.   9- Method according to claim 8 wherein said protective treatment consists of the application of a sacrificial or non-sacrificial protective layer of a material for example included in the group consisting of water-soluble and / or thermodegradable polymers of type polyesters, polyvinyl alcohols, polyacrylamides, starch derivatives, cellulose, insoluble thermodegradable polymers of the aliphatic polyolefin, polyvinyl, acrylate type, hydrophobic and / or oleophobic fluorinated polymers, which are insoluble in water and have good thermal stability of the Teflon type, the carbon-based (DLC), anti-scratch, hydrophobic and / or oleophobic layers, the organo-mineral hybrid layers, ie combining a metal and an organic function incorporated in the layer, for example a hydrophobic function, the mineral layers of the oxides, nitrides, carbides, metals type or a mixture thereof oxynitrides, oxycarbides, mixed oxides.   10- Method according to one of claims 1 to 3 wherein at least one atmospheric plasma device is disposed either at the input of the magnetron line or at the output of the magnetron line so that at least one thin layer is deposited on the face of the tin-containing glass substrate so as to obtain glass substrates covered by thin layers on both their faces.   11- Installation for the continuous treatment of a glass substrate whose dimension perpendicular to the direction of movement along said installation is greater than 1.5 m, said installation comprising in combination: - a magnetron line for the deposition of thin layers successive, comprising a succession of sections, each section comprising at least one cathode made of a material or a precursor of the material to be deposited and operating according to the principle of sputtering under the action of a plasma generated by electric discharge in a plasmagene gas, an atmospheric plasma device, ie generating a plasma in a gas substantially at atmospheric pressure.   12- Installation according to 11 in which the atmospheric plasma device or devices are abutted with the magnetron line without external air intake or intermediate exposure to outside air.   13- Installation according to claim 11 or 12, wherein the atmospheric plasma device is of the remote plasma type.   14- Installation according to one of claims 11 to 13, wherein the atmospheric plasma device is of the plasma type in situ.   15- Installation according to claim 14, wherein the atmospheric plasma device is of the type generating filament discharges in said plasma.   16. The plant of claim 14, wherein the atmospheric plasma device is of the type generating homogeneous discharges in said plasma.   17- Installation according to one of claims 11 to 16, wherein the atmospheric plasma device is disposed upstream of the magnetron line in the direction of treatment of the glass substrate.   18- Installation according to one of claims 11 to 17, wherein the atmospheric plasma device is disposed downstream of the magnetron line, in the treatment direction of the glass substrate.   19- Installation according to one of claims 11 to 18 comprising a combination of one or more atmospheric plasma devices in combination with a magnetron line.   20- Installation according to one of claims 11 to 19 wherein at least one plasma device is disposed opposite the face of the glass substrate containing tin.   21- Application of the installation according to one of claims 11 to 20 or the method according to one of claims 1 to 10 for the manufacture of glass substrates surface treated by deposition of thin layers giving them at least one function included in the group consisting of solar control, low-emissive, electromagnetic shielding, heating, hydrophilic, hydrophobic, photocatalytic, the modification of the level of reflection in the visible (antireflection or mirror), the incorporation of an active system (electrochromic, electroluminescent , photovoltaic).