[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

FR2376515A1 - Ensemble monolithique de deux transistors complementaires - Google Patents

Ensemble monolithique de deux transistors complementaires

Info

Publication number
FR2376515A1
FR2376515A1 FR7639389A FR7639389A FR2376515A1 FR 2376515 A1 FR2376515 A1 FR 2376515A1 FR 7639389 A FR7639389 A FR 7639389A FR 7639389 A FR7639389 A FR 7639389A FR 2376515 A1 FR2376515 A1 FR 2376515A1
Authority
FR
France
Prior art keywords
complementary transistors
input transistor
base
monolithic set
darlington
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7639389A
Other languages
English (en)
Other versions
FR2376515B1 (fr
Inventor
Maurice Bonis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7639389A priority Critical patent/FR2376515A1/fr
Publication of FR2376515A1 publication Critical patent/FR2376515A1/fr
Application granted granted Critical
Publication of FR2376515B1 publication Critical patent/FR2376515B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs

Landscapes

  • Bipolar Transistors (AREA)

Abstract

Dispositif semiconducteur monolithique du type Darlington à deux transistors complémentaires. Dispositif à structure multicouche caractérisé en ce que la base 9 du transistor d'entrée et l'émetteur 4 du transistor de sortie sont interdigités et séparés par une zone très dopée 6 et une couche enterrée 7 localisée à l'aplomb de la jonction base-collecteur du transistor d'entrée Application aux amplificateurs Darlington mixtes intégrés à faible tension de saturation
FR7639389A 1976-12-29 1976-12-29 Ensemble monolithique de deux transistors complementaires Granted FR2376515A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7639389A FR2376515A1 (fr) 1976-12-29 1976-12-29 Ensemble monolithique de deux transistors complementaires

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7639389A FR2376515A1 (fr) 1976-12-29 1976-12-29 Ensemble monolithique de deux transistors complementaires

Publications (2)

Publication Number Publication Date
FR2376515A1 true FR2376515A1 (fr) 1978-07-28
FR2376515B1 FR2376515B1 (fr) 1980-11-07

Family

ID=9181661

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7639389A Granted FR2376515A1 (fr) 1976-12-29 1976-12-29 Ensemble monolithique de deux transistors complementaires

Country Status (1)

Country Link
FR (1) FR2376515A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4261002A (en) * 1977-11-14 1981-04-07 U.S. Philips Corporation Monolithic complementary darlington

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4261002A (en) * 1977-11-14 1981-04-07 U.S. Philips Corporation Monolithic complementary darlington

Also Published As

Publication number Publication date
FR2376515B1 (fr) 1980-11-07

Similar Documents

Publication Publication Date Title
KR840005629A (ko) 전계효과 트랜지스터와 바이폴라트랜지스터를 조합한 게이트회로
GB905426A (en) Improvements in or relating to semi-conductor devices
GB1316555A (fr)
ES385916A1 (es) Un dispositivo amplificador de tension integrado a transis-tores.
FR2376515A1 (fr) Ensemble monolithique de deux transistors complementaires
FR2408914A1 (fr) Dispositif semi-conducteur monolithique comprenant deux transistors complementaires et son procede de fabrication
JPS5348487A (en) Semiconductor device
FR2396470A1 (fr) Circuit logique a transistors a effet de champ travaillant en mode d'appauvrissement/enrichissement
KR920003552A (ko) 반도체 장치
ES402165A1 (es) Un dispositivo semiconductor monolitico.
FR2363897A1 (fr) Dispositif semi-conducteur monolithique comportant un moyen de protection contre les surtensions
JPS5550743A (en) Level shift circuit
CH631048B (fr) Convertisseur de tension alternative en tension continue.
KR850006989A (ko) 달링턴 트랜지스터 장치 및 이를 이용한 푸시풀 증폭기
GB1072937A (en) Field effect assembly
JPS5666908A (en) Cascode circuit
ES393602A1 (es) Circuito semiconductor.
JPS52103976A (en) Semiconductor integrated circuit
JPS56150858A (en) Semiconductor device and manufacture thereof
JPS5339878A (en) Semiconductor device
JPS57172591A (en) Read-only semiconductor storage device
JPS5572082A (en) Semiconductor device
JPS62152521U (fr)
FR1377509A (fr) Amplificateurs à transistors de performances et de sécurité de fonctionnement élevées
SU824831A1 (ru) Полупроводниковый прибор

Legal Events

Date Code Title Description
ST Notification of lapse