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DE69625007D1 - Halbleiterelement-Herstellungsverfahren - Google Patents

Halbleiterelement-Herstellungsverfahren

Info

Publication number
DE69625007D1
DE69625007D1 DE69625007T DE69625007T DE69625007D1 DE 69625007 D1 DE69625007 D1 DE 69625007D1 DE 69625007 T DE69625007 T DE 69625007T DE 69625007 T DE69625007 T DE 69625007T DE 69625007 D1 DE69625007 D1 DE 69625007D1
Authority
DE
Germany
Prior art keywords
semiconductor device
device manufacturing
manufacturing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69625007T
Other languages
English (en)
Other versions
DE69625007T2 (de
Inventor
Hiroaki Anmo
Shigeru Kanematsu
Takayuki Gomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE69625007D1 publication Critical patent/DE69625007D1/de
Application granted granted Critical
Publication of DE69625007T2 publication Critical patent/DE69625007T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H01L21/2652—Through-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H01L21/8228—Complementary devices, e.g. complementary transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/102—Mask alignment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/975—Substrate or mask aligning feature

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
DE69625007T 1995-08-25 1996-08-23 Halbleiterelement-Herstellungsverfahren Expired - Lifetime DE69625007T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21687195A JP3528350B2 (ja) 1995-08-25 1995-08-25 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
DE69625007D1 true DE69625007D1 (de) 2003-01-09
DE69625007T2 DE69625007T2 (de) 2003-07-24

Family

ID=16695228

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69625007T Expired - Lifetime DE69625007T2 (de) 1995-08-25 1996-08-23 Halbleiterelement-Herstellungsverfahren

Country Status (4)

Country Link
US (1) US5830799A (de)
EP (1) EP0762492B1 (de)
JP (1) JP3528350B2 (de)
DE (1) DE69625007T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11224935A (ja) * 1997-12-02 1999-08-17 Mitsubishi Electric Corp 半導体集積回路の基板及び半導体集積回路の製造方法
JP3653963B2 (ja) * 1997-12-25 2005-06-02 ソニー株式会社 半導体装置およびその製造方法
US6656815B2 (en) 2001-04-04 2003-12-02 International Business Machines Corporation Process for implanting a deep subcollector with self-aligned photo registration marks
US6596604B1 (en) * 2002-07-22 2003-07-22 Atmel Corporation Method of preventing shift of alignment marks during rapid thermal processing
JP3775508B1 (ja) * 2005-03-10 2006-05-17 株式会社リコー 半導体装置の製造方法及び半導体装置
JP5088460B2 (ja) * 2005-10-20 2012-12-05 セイコーエプソン株式会社 半導体装置の製造方法
JP5088461B2 (ja) * 2005-10-21 2012-12-05 セイコーエプソン株式会社 半導体装置の製造方法
KR100851751B1 (ko) * 2006-12-27 2008-08-11 동부일렉트로닉스 주식회사 이미지 센서 제조 방법
JP2014216377A (ja) * 2013-04-23 2014-11-17 イビデン株式会社 電子部品とその製造方法及び多層プリント配線板の製造方法
CN112201579B (zh) * 2020-08-26 2024-07-09 株洲中车时代半导体有限公司 一种半导体芯片对准标记的制作方法及半导体芯片
CN112542413B (zh) * 2020-12-03 2021-09-28 中国电子科技集团公司第五十五研究所 一种异质衬底半导体薄膜器件对准方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1520925A (en) * 1975-10-06 1978-08-09 Mullard Ltd Semiconductor device manufacture
US4412376A (en) * 1979-03-30 1983-11-01 Ibm Corporation Fabrication method for vertical PNP structure with Schottky barrier diode emitter utilizing ion implantation
JPS5891256A (ja) * 1981-11-24 1983-05-31 新日本製鐵株式会社 ねじ鉄筋の継手
US4435896A (en) * 1981-12-07 1984-03-13 Bell Telephone Laboratories, Incorporated Method for fabricating complementary field effect transistor devices
JPS58170047A (ja) * 1982-03-31 1983-10-06 Fujitsu Ltd 半導体装置
JPS59158519A (ja) * 1983-02-28 1984-09-08 Toshiba Corp 半導体装置の製造方法
US4573257A (en) * 1984-09-14 1986-03-04 Motorola, Inc. Method of forming self-aligned implanted channel-stop and buried layer utilizing non-single crystal alignment key
JP2545865B2 (ja) * 1987-06-26 1996-10-23 ソニー株式会社 半導体装置の製造方法
JPH03203265A (ja) * 1989-12-28 1991-09-04 Sony Corp 半導体装置
ATE135848T1 (de) * 1990-06-29 1996-04-15 Canon Kk Verfahren zum herstellen einer halbleiteranordnung mit einer ausrichtungsmarke
JPH0478123A (ja) * 1990-07-20 1992-03-12 Fujitsu Ltd 半導体装置の製造方法
FR2667440A1 (fr) * 1990-09-28 1992-04-03 Philips Nv Procede pour realiser des motifs d'alignement de masques.
US5300797A (en) * 1992-03-31 1994-04-05 Sgs-Thomson Microelectronics, Inc. Coplanar twin-well integrated circuit structure
US5503962A (en) * 1994-07-15 1996-04-02 Cypress Semiconductor Corporation Chemical-mechanical alignment mark and method of fabrication

Also Published As

Publication number Publication date
US5830799A (en) 1998-11-03
JPH0964192A (ja) 1997-03-07
EP0762492B1 (de) 2002-11-27
JP3528350B2 (ja) 2004-05-17
EP0762492A1 (de) 1997-03-12
DE69625007T2 (de) 2003-07-24

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Legal Events

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