CN202872791U - A high-speed optical communication transmitting and receiving module using silicon photon integration technology - Google Patents
A high-speed optical communication transmitting and receiving module using silicon photon integration technology Download PDFInfo
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- CN202872791U CN202872791U CN 201220457375 CN201220457375U CN202872791U CN 202872791 U CN202872791 U CN 202872791U CN 201220457375 CN201220457375 CN 201220457375 CN 201220457375 U CN201220457375 U CN 201220457375U CN 202872791 U CN202872791 U CN 202872791U
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Abstract
The utility model relates to a high-speed optical communication transmitting and receiving module using silicon photon integration technology. The high-speed optical communication transmitting and receiving module comprises a light transmitting part, a light receiving part, a silicon substrate, and optical fiber and is characterized in that the light transmitting part and the light receiving part are both mounted on a same silicon substrate and that the output end of the light transmitting part and the input end of the light receiving part are interconnected with and intercommunicate with an external optical communication network via the optical fiber. By using the silicon photon integration technology, micro electrons and photoelectrons can be integrated together to form the high-speed optical communication transmitting and receiving module using silicon photon integration technology. As a result, advantages of advanced and matured technology, high integration degree, and low cost of silicon substrate microelectronics can be fully fulfilled and the high-speed optical communication transmitting and receiving module has wide market prospect. Laser transmission achieved by using optical gain chips, silicon micro loop resonance chips, and silicon reflectors has advantages of high integration degree and agilely-configured laser wavelength and may achieve compact array multi-wavelength transmission.
Description
Technical field
The utility model relates to that photon is integrated, optical communication transceiver module and optical fiber communication, particularly is applied to the key technology in the high speed optical communication system, adopts that silicon photon integrated technology is realized at a high speed, the optical communication transceiver module of integrated, low-power consumption.
Background technology
Network traffics rapid growth in recent years, mainly come from cloud computing, mobile Internet video, data center etc. and use sharply expansion, this has also directly caused the future development of Global Fiber-Optic Communication industry towards Highgrade integration and low-power consumption, as the key technology in the optical fiber telecommunications system, how to realize that integrated small size, low-power consumption, low cost optical transceiver communication module (hereinafter to be referred as " optical module ") become the direct and active demand of Vehicles Collected from Market.
Be referred from the development course of large scale integrated circuit, abroad conducting a research at present active device (such as laser, image intensifer, detector and modulator etc.) and fiber waveguide device (such as light splitting/coupler etc.) are being integrated on the substrate, formation photon monolithic is integrated or the photon mixing is integrated, thereby obtain the device of monolithic multifunction, realize the advantage of similar large scale integrated circuit: low cost, small size, low-power consumption, flexible expansion and high reliability etc.Silicon photon integrated technology is thought the most promising photon integrated technology by industry at present, adopt silicon photon integrated technology microelectronics and photoelectron can be combined, consist of silicon based opto-electronics mixing integrated chip and device, can give full play to the advantage of the advanced and mature technology of silica-based microelectronics, Highgrade integration, low cost etc., have widely market prospects.
Silicon photon integrated technique and microelectronics standard CMOS process compatibility are good, not only can greatly reduce cost, also can integrated silicon-based microelectronic circuit.The fiber waveguide that the integrated common employing Silicon-on-insulator of silicon photon (SOI) material forms, its fiber waveguide is formed by Si sandwich layer and SiO2 covering, larger refractive index difference has very strong restriction to light field therebetween, thereby can realize little waveguide bend radius to micron dimension, thereby provide the basis of realizing for miniaturization and high-density integrated.
Summary of the invention
The purpose of this utility model is for the above-mentioned urgent market demand, silicon photon integrated technology based on the advanced person, the silicon photon integrated high-speed optical communication transceiver module of a kind of High Density Integration, low-power consumption is provided, having broken through currently marketed optical module needs separately optical chip to be packaged into optical device first, refills to be fitted in the optical module structure spare.Adopt technology of the present utility model, can be directly with the several functions optical chip with in requisition for the peripheral support circuit integrated chip on silicon substrate, greatly reduce size, power consumption and cost when front optical module, be easy to batch production, also directly reduced production cost.
The technical solution adopted in the utility model:
Silicon photon integrated high-speed optical communication transceiver module, comprise light radiating portion, light receiving part and silicon substrate, optical fiber, it is characterized in that: light radiating portion, light receiving part are installed on the same silicon substrate, and the output of light radiating portion and the input of light receiving part are realized interconnecting by optical fiber and exterior light communication network.
Described smooth radiating portion comprises: at least one laser, at least one silicon modulator, optical wavelength-division multiplex chip, at least one silicon optical waveguide, an optical fiber, the output of each laser links to each other with the input of optical wavelength-division multiplex chip with a silicon optical waveguide by a silicon modulator, and the output of optical wavelength-division multiplex chip is exported by optical fiber.
Described smooth radiating portion also comprises drive circuit chip, and drive circuit chip links to each other with silicon modulator with the gain of light chip of laser respectively.
Described laser is comprised of gain of light chip, silicon optical waveguide, Si mirror, silicon micro-ring resonant chip, the light that sends when gain of light chip enters into silicon optical waveguide, part light can enter into silicon micro-ring resonant chip and form optical filter, part light passes through Si mirror, light by Si mirror reflects back in the gain of light chip as seed light and forms laser generation, and namely gain of light chip and Si mirror form the vibration chamber.
Described silicon modulation chip is comprised of 1X2 multimode (MM) interferometer, silicon optical waveguide, silicon delay line, two silicon phase shift chips, 2X1MM interferometers, input direct-current light links to each other with 1X2 multimode (MM) interferometer, two outputs of 1X2 multimode (MM) interferometer connect respectively silicon optical waveguide and silicon delay line, and silicon optical waveguide links to each other with the 2X1MM interferometer by a silicon phase shift chip respectively with the silicon delay line and exports light modulated.
Described silicon phase shift chip is comprised of silicon ducting layer, silicon dioxide layer and silicon substrate, is followed successively by silicon dioxide layer, silicon ducting layer on the silicon substrate.
Described light receiving part comprises: at least one restriction is amplified electrical chip, at least one variable resistance and is amplified electrical chip, at least one photodetection chip, Optical Demultiplexing chip, at least one silicon optical waveguide, optical fiber, optical fiber links to each other with the input of Optical Demultiplexing chip, the output of Optical Demultiplexing chip links to each other with each silicon optical waveguide respectively, the Optical Demultiplexing chip links to each other with the input of each photodetection chip respectively, and electrical chip is amplified in corresponding variable resistance amplification electrical chip and a restriction to the output of each photodetection chip successively respectively.
Described light receiving part also comprises an image intensifer, and image intensifer is connected between the input of optical fiber and Optical Demultiplexing chip.
The utility model adopts silicon photon integrated technology microelectronics and photoelectron can be combined formation silicon photon integrated high-speed optical communication transceiver module, can give full play to the advantage of the advanced and mature technology of silica-based microelectronics, Highgrade integration, low cost etc., have widely market prospects.The Laser emission that adopts gain of light chip, silicon micro-ring resonant chip, Si mirror to realize has the advantages such as High Density Integration, flexible configuration excitation wavelength, can realize compact array multi-wavelength emission.
Description of drawings
Fig. 1 is the structured flowchart of silicon photon integrated high-speed optical module of the present utility model.
Fig. 1-1 is semiconductor detector mounting structure schematic diagram of the present utility model.
Fig. 1-2 is that gain of light chip embedding of the present utility model is cemented in structural representation on the silicon substrate.
Fig. 2 is that the utility model adopts gain of light chip to realize the simulation result schematic diagram of Laser emission.
Fig. 3 is the silicon modulation chip structural representation that the utility model adopts the MZ interferometer to realize.
Fig. 3-1 is silicon phase shift chip structure schematic diagram.
Fig. 4 is the silicon modulation chip structural representation that employing micro-ring resonant chip of the present utility model is realized.
Fig. 4-1 is external modulation signal source structural representation.
Fig. 5 is for adopting an instantiation of silicon photon integration realization high-speed optical module.
Embodiment
In order to make the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the utility model is further elaborated.Should be appreciated that specific embodiment described herein only in order to explaining the utility model, and be not used in restriction the utility model.
As shown in Figure 1, the integrated or chip that mixes integrated a plurality of difference in functionalitys of monolithic is on same silicon substrate 100.The principle of light radiating portion at first is described.The laser 109 that Fig. 1 forms take gain of light chip 110 is as example, the light that sends when gain of light chip enters into silicon optical waveguide 111, part light can enter into the optical filter that silicon micro-ring resonant chip 113 forms, this optical filter can optionally leach required wavelength, part light is by Si mirror 112, reflect back in the gain of light chip 110 as seed light, form laser generation, namely 1 gain of light chip 10 and Si mirror 112 form the vibration chamber, silicon micro-ring resonant chip 113 is as optical filter, and realization laser generation swashs penetrates.By changing the size of silicon micro-ring resonant chip 113, can realize the laser of different wave length, Fig. 1 has showed four different excitation wavelength λ that realize by four groups of lasers 109 for example
1, λ
2, λ
3, λ
4, these four different excitation wavelength λ
1, λ
2, λ
3, λ
4Respectively through a silicon modulator 114 modulation and adding information needed, enter into same optical wavelength-division multiplex chip 115 by four silicon optical waveguides 116, realization is multiplexed into four different wave length flashlights in the silicon optical waveguide, at last light signal is directly coupled to the optical fiber 108 in the V-type groove 107 that is positioned silicon substrate 100, as light emission output.Take four groups of different wave length flashlights as example, if the bandwidth of every group of flashlight is 10G, thereby can realize transmitting the purpose of 40G information among Fig. 1; If design N group different wave length flashlight, every group of flashlight bandwidth is 10G, just can realize the bandwidth output of NX10G, and wherein N is not equal to zero natural number.In addition, as the drive circuit chip 117 of gain of light chip 110 and silicon modulator 114, can adopt standard silicon CMOS technology to be achieved also can be integrated on the same silicon substrate with above optical chip.Be cemented on the silicon substrate by the embedding of gain of light chip, and directly couple light in the fiber waveguide that is realized by silicon dioxide sandwich layer and silicon dioxide covering, shown in Fig. 1-2.
For light receiving part, optical fiber 108 from the incident light of the optical network system V-type groove 107 by being arranged in silicon substrate 100 enters into optical module of the present utility model, based on different application, can incident light be amplified or need not to use 106 by an image intensifer 106, enter into again Optical Demultiplexing chip 104, the different wavelength of output is to Different Silicon fiber waveguide 105 behind the incident optical signal demultiplexing, among Fig. 1 with four groups of different incident wavelength λ
1, λ
2, λ
3, λ
4Be example, each incident wavelength enters into a photodetection chip 103 and transfers signal of telecommunication output to, then amplifies through a variable resistance respectively and exports as the reception signal of telecommunication after electrical chip (TIA) 102 and limits amplification electrical chip (LA) 101 shapings amplification.Consider different photodetector 103 types, receive photodetector as example take face, the material structure figure of receiving unit has been described: the fiber waveguide that is realized by silicon dioxide sandwich layer and silicon dioxide covering imports to incoming signal light in the optical module, then through one 45 degree metallic mirror incident light being reflexed to face receives in the semiconductor detector, as Figure 1-1.Equally, similar with radiating portion, if design N group different wave length incoming signal light, every group of flashlight bandwidth is 10G, adopts this scheme, can support equally the bandwidth input of NX10G, and wherein N is not equal to zero natural number.
Fig. 2 further specifies by optical simulation and adopts gain of light chip to realize the operation principle of laser chip 109 among Fig. 1: the laser chip 109 of realizing in 200 presentation graphs 1 among Fig. 2, formed by gain of light chip 201, silicon optical waveguide 202, silicon micro-ring resonant chip 203 and Si mirror 204, by changing the size of silicon micro-ring resonant chip 203, adopt this module of the utility model can realize the excitation wavelength output of four groups of different Coarse Wavelength Division Multiplexing (CWDM) wavelength, comprise 1271nm, 1291nm, 1311nm and four groups of wavelength of 1331nm and corresponding spectrum.In present 40G and 100G Ethernet optical network system client, require to adopt the flashlight of four groups of CWDM wavelength light multiplexing formation 40G and 100G, therefore, this module of the utility model may be used in the optical network system of 40G and 100G.
Fig. 3 and Fig. 4 for example understand two kinds of structures that realize silicon modulation chip 114 among Fig. 1, are not limited in these two kinds of structures in the actual conditions and realize silicon modulation chip 114, just illustrate here.Fig. 3 has illustrated that the employing horse relates to the structure of the silicon modulation chip of Ceng De (MZ) interferometer realization, described silicon modulation chip is by 1X2 multimode (MM) interferometer 300, silicon optical waveguide 301, silicon delay line 304, two silicon phase shift chips 302,2X1MM interferometer 303 forms, input direct-current light links to each other with 1X2 multimode (MM) interferometer 300,300 2 outputs of 1X2 multimode (MM) interferometer connect respectively silicon optical waveguide 301 and silicon delay line 304, and silicon optical waveguide 301 links to each other with 2X1MM interferometer 303 by a silicon phase shift chip 302 respectively with silicon delay line 304 and exports light modulated.Further, silicon phase shift chip 302 structures have comprised silicon ducting layer 308, silicon dioxide layer 307 and silicon substrate 306, shown in Fig. 3-1.Input direct-current light is divided into the light beam of two bundle same-phases, constant power after through 1X2 multimode (MM) interferometer 300 and propagates along two branches, through overmodulation the time, because carrier injection has changed the optical constant of an arm of modulator, light beam phase generate in this waveguide is changed, at 2X1MM interferometer 303 places two beam interferences, the stack of amplitude occurs or disappear mutually, like this, two arm refringences by light modulated transmission are to regulate relative phase, can form relevant or disappear mutually and finally reach the effect of light modulation, realization output light modulated.
Adopted the micro-ring resonant chip to realize the structure of silicon modulator 400 among Fig. 4, inner by silicon light straight wave guide 401, the silicon micro-ring resonant chip 403 with wavelength selection function, p+ doping 404() and n+ doping 402(outside) electrode that forms forms, can realize modulation function by external modulation signal source 405, its concrete material structure is shown in Fig. 4-1.The inside 404 of micro-ring resonant chip 403 and outside 402 has formed electrode structure, is used for injected carrier: when adding modulation signal, level"1" can cause an end input direct-current light of silicon light straight wave guide 401 directly by 401, exports from the other end; During level "0", the light in 401 is coupled in 403, and 401 outputs have formed the output light modulated like this with unglazed output.Shown in 406, the method has adopted the high index-contrast structure, not only can guarantee small size, and can realize the raising of switching speed, i.e. high modulation speeds.
The utility model provides the concrete scheme of a silicon photon integration realization optical module, as shown in Figure 5 take single laser and single detector as example.Similarly scheme also can be applicable to adopt laser and detector array, realizes optical module more at a high speed, as shown in Figure 5.Sign among Fig. 5 whole scheme, comprise a gain of light chip 507, micro-ring resonant chip 509, Si mirror 508, a silicon modulation chip (511,512,513), Si detector 504, a gain of light chip drives electrical chip 507 and receive electrical chip 501, all be integrated on the same silicon substrate.The Laser emission that realizes for integrated optical module radiating portion (506,508,509) outputs in the silicon optical waveguide 510, enters into the silicon modulation chip and obtains optical signal modulation.In order to realize the coupling efficiency higher with optical fiber, change chip 514 from the light modulated of silicon modulation chip output by an optical mode, mate with optical fiber 515 its output optical mode field energy is enough, realize higher coupling efficiency.For receiving unit, after input signal light entered into photodetection chip 504 from optical fiber 505, the signal of telecommunication of output finally formed electrical modulation signal output after entering into reception electrical chip 501 through electric waveguide 502.
The above only is preferred embodiment of the present utility model; not in order to limit the utility model; all any modifications of within spirit of the present utility model and principle, doing, be equal to and replace and improvement etc., all should be included within the protection range of the utility model patent.
Claims (8)
1. silicon photon integrated high-speed optical communication transceiver module, comprise light radiating portion, light receiving part and silicon substrate, optical fiber, it is characterized in that: light radiating portion, light receiving part are installed on the same silicon substrate, and the output of light radiating portion and the input of light receiving part are realized interconnecting by optical fiber and exterior light communication network.
2. silicon photon integrated high-speed optical communication transceiver module according to claim 1, it is characterized in that: described smooth radiating portion comprises: at least one laser, at least one silicon modulator, optical wavelength-division multiplex chip, at least one silicon optical waveguide, an optical fiber, the output of each laser links to each other with the input of optical wavelength-division multiplex chip with a silicon optical waveguide by a silicon modulator, and the output of optical wavelength-division multiplex chip is exported by optical fiber.
3. silicon photon integrated high-speed optical communication transceiver module according to claim 2, it is characterized in that: also comprise drive circuit chip, drive circuit chip links to each other with silicon modulator with the gain of light chip of laser respectively.
4. according to claim 2 or 3 described silicon photon integrated high-speed optical communication transceiver modules, it is characterized in that: described laser is comprised of gain of light chip, silicon optical waveguide, Si mirror, silicon micro-ring resonant chip, the light that sends when gain of light chip enters into silicon optical waveguide, part light can enter into silicon micro-ring resonant chip and form optical filter, part light passes through Si mirror, light by Si mirror reflects back in the gain of light chip as seed light and forms laser generation, and namely gain of light chip and Si mirror form the vibration chamber.
5. according to claim 2 or 3 described silicon photon integrated high-speed optical communication transceiver modules, it is characterized in that: described silicon modulation chip is comprised of 1X2 multimode (MM) interferometer, silicon optical waveguide, silicon delay line, two silicon phase shift chips, 2X1MM interferometers, input direct-current light links to each other with 1X2 multimode (MM) interferometer, two outputs of 1X2 multimode (MM) interferometer connect respectively silicon optical waveguide and silicon delay line, and silicon optical waveguide links to each other with the 2X1MM interferometer by a silicon phase shift chip respectively with the silicon delay line and exports light modulated.
6. silicon photon integrated high-speed optical communication transceiver module according to claim 5, it is characterized in that: described silicon phase shift chip is comprised of silicon ducting layer, silicon dioxide layer and silicon substrate, is followed successively by silicon dioxide layer, silicon ducting layer on the silicon substrate.
7. silicon photon integrated high-speed optical communication transceiver module according to claim 1, it is characterized in that: described light receiving part comprises: electrical chip is amplified at least one restriction, at least one variable resistance is amplified electrical chip, at least one photodetection chip, an Optical Demultiplexing chip, at least one silicon optical waveguide, optical fiber, optical fiber links to each other with the input of Optical Demultiplexing chip, the output of Optical Demultiplexing chip links to each other with each silicon optical waveguide respectively, the Optical Demultiplexing chip links to each other with the input of each photodetection chip respectively, and electrical chip is amplified in corresponding variable resistance amplification electrical chip and a restriction to the output of each photodetection chip successively respectively.
8. silicon photon integrated high-speed optical communication transceiver module according to claim 7, it is characterized in that: described light receiving part also comprises an image intensifer, image intensifer is connected between the input of optical fiber and Optical Demultiplexing chip.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102882601A (en) * | 2012-09-10 | 2013-01-16 | 胡朝阳 | Silicon photonic integrated high-speed optical communication transceiver module |
| CN104601244A (en) * | 2014-12-22 | 2015-05-06 | 武汉电信器件有限公司 | 400 Gbps hot-plug high-speed optical transceiver module |
| CN104901745A (en) * | 2014-03-03 | 2015-09-09 | 颖飞公司 | Optical module |
| CN105703835A (en) * | 2016-03-24 | 2016-06-22 | 中国科学院半导体研究所 | Monolithic-integration-based high-speed optical communication transceiving module |
| CN106685532A (en) * | 2016-12-23 | 2017-05-17 | 武汉邮电科学研究院 | Multi-wavelength optical transmission chip and method utilizing polarization multiplexing function |
| CN107153237A (en) * | 2017-06-20 | 2017-09-12 | 华中科技大学 | A kind of light transmit-receive integrated device of multichannel silicon substrate wavelength-division multiplex high speed |
| CN111276562A (en) * | 2020-02-19 | 2020-06-12 | 上海交通大学 | Photoelectric monolithic integration system based on lithium niobate-silicon nitride wafer |
| CN112771793A (en) * | 2018-10-11 | 2021-05-07 | 卢克斯特拉有限公司 | Method and system for CWDM multiplexer/demultiplexer design for silicon photonic interposer |
| CN115343808A (en) * | 2021-06-29 | 2022-11-15 | 讯芸电子科技(中山)有限公司 | Optical module device |
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2012
- 2012-09-10 CN CN 201220457375 patent/CN202872791U/en not_active Expired - Fee Related
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102882601B (en) * | 2012-09-10 | 2015-04-22 | 胡朝阳 | Silicon photonic integrated high-speed optical communication transceiver module |
| CN102882601A (en) * | 2012-09-10 | 2013-01-16 | 胡朝阳 | Silicon photonic integrated high-speed optical communication transceiver module |
| CN104901745B (en) * | 2014-03-03 | 2018-11-09 | 颖飞公司 | Integrated equipment for communication |
| CN104901745A (en) * | 2014-03-03 | 2015-09-09 | 颖飞公司 | Optical module |
| CN104601244A (en) * | 2014-12-22 | 2015-05-06 | 武汉电信器件有限公司 | 400 Gbps hot-plug high-speed optical transceiver module |
| CN104601244B (en) * | 2014-12-22 | 2017-12-26 | 武汉电信器件有限公司 | A kind of 400Gb/s hot plugs High Speeding Optical Transmitter-receiver Circuit |
| CN105703835A (en) * | 2016-03-24 | 2016-06-22 | 中国科学院半导体研究所 | Monolithic-integration-based high-speed optical communication transceiving module |
| CN106685532A (en) * | 2016-12-23 | 2017-05-17 | 武汉邮电科学研究院 | Multi-wavelength optical transmission chip and method utilizing polarization multiplexing function |
| CN107153237A (en) * | 2017-06-20 | 2017-09-12 | 华中科技大学 | A kind of light transmit-receive integrated device of multichannel silicon substrate wavelength-division multiplex high speed |
| CN112771793A (en) * | 2018-10-11 | 2021-05-07 | 卢克斯特拉有限公司 | Method and system for CWDM multiplexer/demultiplexer design for silicon photonic interposer |
| CN112771793B (en) * | 2018-10-11 | 2024-03-29 | 卢克斯特拉有限公司 | Method and system for CWDM multiplexer/demultiplexer design for silicon photon inserters |
| CN111276562A (en) * | 2020-02-19 | 2020-06-12 | 上海交通大学 | Photoelectric monolithic integration system based on lithium niobate-silicon nitride wafer |
| CN115343808A (en) * | 2021-06-29 | 2022-11-15 | 讯芸电子科技(中山)有限公司 | Optical module device |
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