CN1752273A - Opposed target sputtering apparatus and method for mfg.organic electroluminescence display - Google Patents
Opposed target sputtering apparatus and method for mfg.organic electroluminescence display Download PDFInfo
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- CN1752273A CN1752273A CNA2005101066327A CN200510106632A CN1752273A CN 1752273 A CN1752273 A CN 1752273A CN A2005101066327 A CNA2005101066327 A CN A2005101066327A CN 200510106632 A CN200510106632 A CN 200510106632A CN 1752273 A CN1752273 A CN 1752273A
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- 238000004544 sputter deposition Methods 0.000 title claims abstract description 49
- 238000000034 method Methods 0.000 title claims abstract description 18
- 238000005401 electroluminescence Methods 0.000 title claims description 31
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 238000004519 manufacturing process Methods 0.000 claims abstract description 48
- 238000005477 sputtering target Methods 0.000 claims abstract description 45
- 239000012528 membrane Substances 0.000 claims description 41
- 238000009434 installation Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 230000001681 protective effect Effects 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 239000010408 film Substances 0.000 abstract description 31
- 239000002245 particle Substances 0.000 abstract description 15
- 239000010409 thin film Substances 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- BNEMLSQAJOPTGK-UHFFFAOYSA-N zinc;dioxido(oxo)tin Chemical compound [Zn+2].[O-][Sn]([O-])=O BNEMLSQAJOPTGK-UHFFFAOYSA-N 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- -1 AZO Chemical compound 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000012774 insulation material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229920001621 AMOLED Polymers 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
To provide a sputtering apparatus that prevents a thin film from being damaged due to the collision of particles having high energy against a substrate, which are produced when the film is formed, by using discoidal facing targets, and that suits to mass production because of rotating a plurality of the substrates to be thin-film-formed around the discoidal facing target, and to provide a method for manufacturing an organic electroluminescent display device by using it. This sputtering apparatus comprises: a chamber section provided with a chamber which is a body, and a substrate-mounting part capable of mounting a plurality of the substrates thereon along an inner wall of the chamber; a pair of the facing sputtering targets which are placed so as to face with each other at a predetermined distance and form a restrictive space; and a magnetic-field-generating means which are placed on each back face of a pair of the targets and generate a magnetic field in the restrictive space.
Description
Technical field
The present invention relates to a kind of sputter equipment and the manufacture method of utilizing the organic electroluminescence display device and method of manufacturing same of this device, relate in particular to a kind of facing targets sputtering device and the manufacture method of utilizing the organic electroluminescence display device and method of manufacturing same of this device, prevent the membrane damage that high-octane particle encounter substrate causes that has that film produced when forming by the subtend target that uses rondelle thus, and by around described rondelle subtend target, rotating a plurality of substrates and form film, thereby be suitable for mass production.
Background technology
Usually, organic electroluminescence display device and method of manufacturing same is that electronics (electron) injecting electrode (cathode) and hole (hole) injecting electrode (anode) are injected electronics (electron) and hole (hole) to the inside of luminescent layer (emitting layer) respectively, the exciton (exciton) that combines as institute's injected electrons (electron) and hole (hole) luminous luminous display unit when reducing to ground state by excited state.
According to this principle, organic electroluminescence display device and method of manufacturing same is different with existing film liquid crystal indicator, does not need other light source, thereby has the advantage that can reduce unitary volume and weight.
The mode that drives described organic electroluminescence display device and method of manufacturing same is divided into passive matrix (passive matrixtype) and active array type (active matrix type).
Described passive matrix organic electroluminescence display device and method of manufacturing same, its structure and manufacture method are simple, but exist to consume the electric power height, be difficult to big areaization and along with distribution quantity increases the defective that its aperture opening ratio reduces.
Therefore, use described passive matrix organic electroluminescence display device and method of manufacturing same for small display unit, and use described active matrix type organic electroluminescent display unit for large-area display unit.
And described organic electroluminescence display device and method of manufacturing same is provided with organic membrane between upper electrode and lower electrode, and this organic membrane comprises the luminescent layer that generally is made of Alq3.At this moment, make one among described upper electrode and the lower electrode to be anode, if making lower electrode is anode, then another among the electrode of upper and lower part is negative electrode, and promptly upper electrode is as negative electrode and luminous.
This described organic electroluminescence display device and method of manufacturing same, though according to the emission type of described organic electroluminescence display device and method of manufacturing same and different, generally form by common metallic membrane or the nesa coating of sputtering method evaporation on described upper electrode and lower electrode.
This sputtering method certainly will represented the film-forming process technology of the manufacturing process of electronicss such as organic electroluminescence display device and method of manufacturing same, be widely used in having among the dry-type processing technology in widespread adoption field, be a kind of by import in the vacuum vessel as the rare gas of Ar gas and on the target with supply negative electrode direct current (DC) power of the high pressure more than the 150V or high frequency (RF) power and the next film forming method of luminous (glow) discharge.
Aforesaid sputtering method, though the energy that particle had that flies out from target when applying voltage and forming plasma has substantial connection, but described sputtering method is owing to the above power supply of supply 150V, thereby increase has the generation of the above high energy particle of 100eV.
What produced in described sputtering technology has a collision of high-octane particle and substrate, thereby has the problem of the described substrate of damage.And, when forming other film on the described substrate, damage described film.
Especially, when forming upper electrode by sputtering method on the organic membrane with described luminescent layer of described organic electroluminescence display device and method of manufacturing same, the above high-octane particle of 100eV that has that is produced in the described sputtering technology collides with described organic membrane and damages described organic membrane.Since the damage of this organic membrane, as shown in Figure 1, the problem that in reversed bias (reverse bias) zone of organic light-emitting display device, exists leakage current to increase considerably.
In addition, in order to solve aforesaid problem, disclosed in korean patent application open " 2002-0087839 number " specification sheets a kind of in sputter equipment with two mutual opposed facing targets sputtering devices of target.
Yet described facing targets sputtering device can only be installed a substrate and sputter and form film, thereby is restricted in mass production.
Summary of the invention
The present invention proposes in order to solve described existing technical problem, it is a kind of by using the subtend target of rondelle that its purpose is to provide, and what prevent that film from being produced when forming has high-octane particle bombardment substrate and the facing targets sputtering device of the membrane damage that causes and utilize the manufacture method of the organic electroluminescence display device and method of manufacturing same of this device.
And, another object of the present invention is to provide a kind of and form film, thereby be suitable for mass-produced facing targets sputtering device and the manufacture method of utilizing the organic electroluminescence display device and method of manufacturing same of this device by around described rondelle subtend target, rotating a plurality of substrates.
In order to solve described purpose, facing targets sputtering device provided by the present invention comprises: chamber portion, this chamber portion comprise the chamber that forms housing and the substrate installation portion of a plurality of substrates can be installed along described chamber interior walls; At least one sputtering target portion, this sputtering target portion comprise a pair of subtend sputtering target of separated by a distance and opposed and formation constraint space and are separately positioned on the back of described a pair of target and produce the magnetic field generation unit in magnetic field in described constraint space.
Described substrate installation portion can be along the inwall rotation of described chamber, and the swing-around trajectory of described substrate installation portion and described a pair of subtend sputtering target form concentric(al) circles.
Described a pair of subtend sputtering target is a rondelle, and described a pair of subtend sputtering target is made of same substance or mutually different material.
The interior pressure of described chamber is kept 0.1mTorr to 100mTorr.
The refrigerating unit that further comprises the magnetic field generation unit that is used to cool off described sputtering target portion.
Described substrate is preferably kept the temperature below 100 ℃.
And the manufacture method of organic electroluminescence display device and method of manufacturing same provided by the present invention comprises: the stage that forms lower electrode on substrate; Form the stage of pixel definition film, this pixel definition film has the peristome that the part that makes described lower electrode is exposed; On described pixel definition film, form the stage of the organic membrane that has luminescent layer at least; Utilize described facing targets sputtering device on described organic membrane, to form the stage of upper electrode.
Further be included in the stage of the protective membrane that is formed for protecting described upper electrode and described organic membrane on the described upper electrode.
Description of drawings
Fig. 1 is the synoptic diagram that is used to illustrate the leakage current that adopts the organic electroluminescence display device and method of manufacturing same that existing sputter equipment forms;
Fig. 2 a is the longitdinal cross-section diagram of the facing targets sputtering device that is used to illustrate that one embodiment of the present invention provides;
Fig. 2 b is the orthographic plan of the facing targets sputtering device that is used to illustrate that one embodiment of the present invention provides;
Fig. 2 c is the generalized schematic of the facing targets sputtering device that is used to illustrate that one embodiment of the present invention provides;
Fig. 3 is the longitdinal cross-section diagram of the facing targets sputtering device that is used to illustrate that another embodiment of the invention provides;
Fig. 4 a is the engineering sectional view that is used to illustrate the manufacture method of the organic electroluminescence display device and method of manufacturing same that adopts facing targets sputtering device provided by the present invention;
Fig. 4 b is the engineering sectional view that is used to illustrate the manufacture method of the organic electroluminescence display device and method of manufacturing same that adopts facing targets sputtering device provided by the present invention;
Fig. 5 is the synoptic diagram that is used to illustrate the leakage current of the organic electroluminescence display device and method of manufacturing same that adopts facing targets sputtering device provided by the present invention.
Main nomenclature: 100 is the subtend sputter equipment, and 200 is chamber portion, and 210 is the chamber; 220 is the substrate installation portion, and 300,500,600 is sputtering target portion, and 311,315 is sputtering target; 320 is the magnetic field generation unit, and 330 is refrigerating unit, and 400 is power supply device; 700 is insulating substrate, and 710 is lower electrode, and 720 are pixel definition film; 725 is peristome; 730 is organic membrane, and 740 is upper electrode, and 750 is protective membrane.
Embodiment
Below, the embodiment that present invention will be described in detail with reference to the accompanying is provided.
Fig. 2 a is the longitdinal cross-section diagram of the facing targets sputtering device that is used to illustrate that one embodiment of the present invention provides, Fig. 2 b is the orthographic plan of the facing targets sputtering device that is used to illustrate that one embodiment of the present invention provides, and Fig. 2 c is the generalized schematic of the facing targets sputtering device that is used to illustrate that one embodiment of the present invention provides.
Shown in Fig. 2 a to 2c, the facing targets sputtering device 100 that embodiments of the present invention provided comprises the chamber portion 200 that forms described facing targets sputtering device 100 housings and constitutes with being arranged on described indoor sputtering target portion 300 and power supply device 400.
Described chamber portion 200 comprises the chamber 210 of the housing that forms described facing targets sputtering device 100 and the substrate installation portion 220 of a plurality of substrates is installed.Described chamber 210 is columnar approximately vacuum chamber, the vacuum between the inner sustain 0.1mTorr to 100mTorr of chamber 210.Described substrate installation portion 220 is installed a plurality of substrate S along the inwall of described chamber 210.And described substrate installation portion 220 can rotate 360 ° along the inwall of described chamber 210.
Described sputtering target portion 300, comprise: a pair of subtend sputtering target 311,315 is made of the material that is used to sputter on the substrate S; Magnetic field generation unit 320, the space that is used between described a pair of subtend sputtering target 311,315 produces magnetic field; Refrigerating unit 330 is used to cool off described magnetic field generation unit 320.
Described a pair of subtend sputtering target 311,315 is arranged to inwall with described chamber 210 and keeps at a certain distance away and form constraint space betwixt, and because described chamber 210 is columnar approximately shape, thereby described sputtering target 311,315 is to form concentrically ringed approximately rondelle with described chamber 210.And, described a pair of subtend sputtering target 311,315 is made of the material that is used to form on described substrate S, and may be made of same substance or mutually different material according to the described a pair of subtend sputtering target 311,315 of the kind that is used to form the material on described substrate S.
For example, described a pair of subtend sputtering target 311,315 may be made of aluminium (Al), aluminium alloy (Al alloy) and its Equivalent.
And described a pair of subtend sputtering target 311,315 may be made of ITO (Indium-Tin Oxide), IZO (Indium-Zinc Oxide), IO (Indium Oxide), ZnO, TZO (Tin-Zinc Oxide), AZO, GZO or its Equivalent.
And, constitute by mutually different material by making described a pair of subtend sputtering target 311,315, can on described substrate S, form the film of the compound of forming by two or more materials.Perhaps, any one among for example described a pair of subtend sputtering target 311,315 is made of ITO and another is made of IZO, then can form the film of being made up of ITZO on described substrate S.That is, can be varied, with the combinations of substances that is formed on the described substrate S by on described a pair of subtend sputtering target 311,315, adopting mutually different material.
Described magnetic field generation unit 320 is a permanent magnet, produces magnetic field by the direction perpendicular to described a pair of subtend sputtering target 311,315, and is located at the back side of described a pair of subtend sputtering target 311,315 respectively, so that magnetic flux evenly surrounds described constraint space.
Described refrigerating unit 330 cools off the magnetic field generation unit 320 of described sputtering target portion 300 with heat exchange pattern by cooling-water flow.
Described power supply device 400 is worked as negative electrode in order to make described a pair of subtend sputtering target 311,315, to described a pair of subtend sputtering target 311,315 supply negative supplies, and is worked in described chamber 210 as anode.
The work of aforesaid facing targets sputtering device 100 is as described below.
Secondly, shown in Fig. 2 c, if on described a pair of subtend sputtering target 311,315, apply power supply (negative voltage) simultaneously, then in constraint space, produce sputter plasma and restrained space constraint by the magnetic field that produces by described magnetic field generation unit 320 by described power supply device 400.At this moment, described plasma is made up of γ (gamma) electronics, negatively charged ion, positively charged ion etc.
This plasma shows uniform plasma voltage in described constraint space shown in Fig. 2 c.At this moment, electronics in the described plasma forms high-density plasma when the magnetic line of force that connects described a pair of subtend sputtering target 311,315 rotates, and is undertaken keeping high-density plasma in the back and forth movement by the power supply (negative voltage) that applies on described a pair of sputtering target 311,315.Promptly, by the power supply that is formed or is applied in the plasma formed whole electronics, ion are rotated along magnetic line of force, equally, charged ion grains such as γ electronics, negative ion, positively charged ion also carry out back and forth movement along described magnetic line of force, thereby have of the target acceleration of the above high-octane charged particle of 100eV towards opposition side, be restrained to thus in the plasma that is formed in the described constraint space.At this moment, in any one target by the particle of sputter, owing to have of the target acceleration of the above high-octane particle of 100eV towards opposition side, thereby, go up the formation film by having the described substrate S of being diffused in of more low-energy neutral particle for having no effect on the substrate S of plasma that is formed on relatively in the described constraint space by the vertical direction placement.
Therefore, compare with the situation that adopts existing sputter equipment and can prevent the damage that causes by plasma, i.e. the damage of the substrate S that causes by bombardment with high-octane particle, and can on substrate S, form film.And, owing to there is not a bombardment,, therefore can make organic damage minimum so also can not make substrate S keep temperature below 100 ℃ even the system of other cooling substrate S is not set with high-octane particle.
In addition, Fig. 3 is the longitdinal cross-section diagram of the facing targets sputtering device that is used to illustrate that another embodiment of the invention provides.
The facing targets sputtering device that another embodiment provided and the facing targets sputtering device shown in Fig. 2 a to Fig. 2 c of invention shown in Figure 3 are structurally similar.Just be provided with the structure difference of a plurality of sputtering target portion 500,600 in chamber portion 200.That is, by being provided with a plurality of substrate S of a plurality of sputtering target portion's 500,600 sputters simultaneously in the described chamber portion 200.At this moment, the rotation radius of the radius of the described chamber 210 of described chamber portion 200 and described substrate installation portion 220 is bigger than the rotation radius of the radius of the chamber of the facing targets sputtering device shown in described Fig. 2 a to 2c and substrate installation portion.
Fig. 4 a and Fig. 4 b are the engineering sectional view that is used to illustrate the manufacture method of the organic electroluminescence display device and method of manufacturing same that adopts facing targets sputtering device provided by the present invention.
Shown in Fig. 4 a, on insulating substrate 700, form lower electrode 710.At this moment, when the organic electroluminescent display unit is active matrix type organic electroluminescent display unit (Active Matrix OrganicLight Emission Device, AMOLED), on described insulating substrate 700, formed thin film transistor (TFT).
Form after the described lower electrode 710, form pixel definition film 720 in the front of described insulating substrate 700, and expose the peristome 725 of the part of described lower electrode 710 by the described pixel definition of photoetching film 720 with formation.Described pixel definition film 720 is by the organic insulation material or the PI (Polyimide: etc. photosensitivity organic insulation material formation polyimide) of phenol (phenol) series.
Form after the described pixel definition film 720, form the organic membrane 730 that comprises luminescent layer at least on the top of described peristome 725.At this moment, described organic membrane 730 can be made up of multilayer according to its function, but generally comprises described luminescent layer (EML) at least among hole injection layer (HIL), hole transmission layer (HTL), luminescent layer (Emitting layer), hole trapping layer (HBL), electron supplying layer (ETL), electron injecting layer (EIL).
Form after the described organic membrane 730, form adopt on the insulating substrate 700 of described organic membrane 730 as Fig. 2 a to Fig. 2 c and facing targets sputtering device shown in Figure 3 as described in form upper electrode on the organic membrane 730.At this moment, when adopting described facing targets sputtering device to form described upper electrode 740, can prevent from what plasma produced to have a high-octane particle damage organic membrane 730.
Form after the described upper electrode 740, on described upper electrode 740, be formed for preventing that organic membrane 730 is by external oxygen and moisture and by the protective membrane 750 of deterioration, described organic membrane 730 comprises described upper electrode 740 and described luminescent layer.Described protective membrane 750 is generally by SiNx, SiO
2Deng inorganics or the organism of propylene, PI, PA, BCB etc. form.
Then, though do not illustrate among the figure, use seal substrate sealed lower portion electrode 710, have the organic membrane 730 of described luminescent layer and have the insulating substrate 700 of upper electrode 740.
In addition, described lower electrode 710 and upper electrode 740 can be made of multiple structure according to the emission type of described organic electroluminescence display device and method of manufacturing same.When aforesaid organic electroluminescence display device and method of manufacturing same is the back side illuminated type, general described lower electrode 710 can constitute by the nesa coating that is made of ITO (Indium-Tin Oxide), IZO (Indium-Zinc Oxide), ITZO (Indium-Tin-Zinc Oxide), IO (IndiumOxide), ZnO, TZO (Tin-Zinc Oxide), AZO, GZO or its Equivalent, and described upper electrode 740 can constitute by the metallic membrane with good reflection rate that is made of Al, Al alloy or its equivalence.And, when described organic electroluminescence display device and method of manufacturing same is preceding surface-emitting type, general described lower electrode 710 can be by the structure by the metallic membrane with good reflection degree, constitute as the double membrane structure of forming by metallic membrane and nesa coating, described upper electrode 740 can by meet and described lower electrode 710 between the semitransparent metal film of working function relation and the double membrane structure of nesa coating constitute.And, when described organic electroluminescence display device and method of manufacturing same is the lighting at two sides type, general described lower electrode 710 and upper electrode 740 can be by the structures that can see through the light that organic membrane 730 with described luminescent layer sent, lower electrode 710 can be made of nesa coating as described, described upper electrode 740 can be made of the double membrane structure of semitransparent metal film and nesa coating, but the present invention is not the structure that limits described lower electrode 710 and upper electrode 740.
In addition, Fig. 5 is the synoptic diagram that is used to illustrate the leakage current that adopts the organic electroluminescence display device and method of manufacturing same that facing targets sputtering device provided by the present invention makes.
As shown in Figure 5, when chamber 210 pressure inside that make the facing targets sputtering device 100 shown in Fig. 2 a to Fig. 2 c are kept 5mTorr, make the ratio of argon gas and oxygen keep 9/1, make described a pair of subtend sputtering target 311,315 be ITO, and supply between the 100W to 300W power supply and when forming the upper electrode that is made of ITO of 1000A, organic electroluminescence display device and method of manufacturing same does not almost have leakage current (leakage current) in reversed bias (reverse bias) zone.
That is, when adopting the facing targets sputtering device 100 shown in Fig. 2 a to Fig. 2 c to carry out sputter,, especially less to the damage of organic membrane 730 with luminescent layer to being formed on the film on the described substrate S.
As mentioned above, the facing targets sputtering device 100 that embodiment of the present invention provided adopts a pair of subtend sputtering target 311,315, thereby can form film keeping on the vertical approximately substrate S, and can prevent described substrate S damaged thus with described a pair of subtend sputtering target 311,315.Especially, to organic electroluminescence display device and method of manufacturing same, when formation has upper electrode 740 on the organic membrane 730 of luminescent layer, can not damage described organic membrane 730 and form upper electrode 740.
And, a plurality of substrate S are installed and are rotated and sputter along the inwall of described chamber 210 at described substrate installation portion 220, thus film forming in a large number.
In sum, according to facing targets sputtering device provided by the present invention with utilize the manufacture method of the organic electroluminescence display device and method of manufacturing same of this device, can prevent the membrane damage that high-octane particle bombardment substrate causes that has that film produced when forming by the subtend target that uses rondelle; And, form film by around described rondelle subtend target, rotating a plurality of substrates, thereby can be suitable for mass production.
Though foregoing is described with reference to being used to implement preferred implementation of the present invention, but the personnel of this technical field should be appreciated that, can carry out multiple modifications and changes to the present invention under the situation that does not break away from thought of the present invention that claim puts down in writing and scope.
Claims (12)
1, a kind of facing targets sputtering device is characterized in that comprising:
Chamber portion, this chamber portion comprise the chamber that forms housing and the substrate installation portion of a plurality of substrates can be installed along described chamber interior walls;
At least one sputtering target portion, this sputtering target portion comprise a pair of subtend sputtering target of separated by a distance and opposed and formation constraint space and are separately positioned on the back of described a pair of target and produce the magnetic field generation unit in magnetic field in described constraint space.
2, device according to claim 1 is characterized in that described substrate installation portion can be along the inwall rotation of described chamber.
3, device according to claim 1 is characterized in that described a pair of subtend sputtering target is a rondelle.
4, device according to claim 2 is characterized in that the swing-around trajectory of described substrate installation portion and described a pair of subtend sputtering target form concentric(al) circles.
5, device according to claim 1 is characterized in that described a pair of subtend sputtering target is made of same substance.
6, device according to claim 1 is characterized in that described a pair of subtend sputtering target is made of mutually different material.
7, device according to claim 1, the interior pressure that it is characterized in that described chamber is 0.1mTorr to 100mTorr.
8, device according to claim 1 is characterized in that further comprising the refrigerating unit of the magnetic field generation unit that is used to cool off described sputtering target portion.
9, device according to claim 1 is characterized in that described substrate keeps the temperature below 100 ℃.
10, a kind of manufacture method of organic electroluminescence display device and method of manufacturing same is characterized in that comprising:
On substrate, form the stage of lower electrode;
Form the stage of pixel definition film, this pixel definition film has the peristome that the part that makes described lower electrode is exposed;
On described pixel definition film, form the stage of the organic membrane that has luminescent layer at least;
Utilize claim 1 on described organic membrane, to form the stage of upper electrode to any facing targets sputtering device of being put down in writing in the claim 9.
11, method according to claim 10 is characterized in that the described indoor pressure of described sputter equipment is 0.1mTorr to 100mTorr.
12, method according to claim 10 is characterized in that further being included in stage of the protective membrane that is formed for protecting described upper electrode and described organic membrane on the described upper electrode.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020040076151 | 2004-09-22 | ||
| KR1020040076151A KR20060027280A (en) | 2004-09-22 | 2004-09-22 | Faced target sputtering device and method of fabricating oled by using the same |
| KR1020040096346 | 2004-11-23 | ||
| KR1020050001140 | 2005-01-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1752273A true CN1752273A (en) | 2006-03-29 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNA2005101066327A Pending CN1752273A (en) | 2004-09-22 | 2005-09-22 | Opposed target sputtering apparatus and method for mfg.organic electroluminescence display |
Country Status (2)
| Country | Link |
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| KR (1) | KR20060027280A (en) |
| CN (1) | CN1752273A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100732491B1 (en) * | 2006-09-21 | 2007-06-27 | 배상열 | Low-energy thinfilm deposition apparatus |
| KR100914038B1 (en) * | 2007-06-04 | 2009-08-28 | 주식회사 탑 엔지니어링 | Twin Target Sputtering Apparatus |
| KR101441386B1 (en) * | 2007-12-26 | 2014-09-17 | 엘지디스플레이 주식회사 | Sputtering apparatus |
| KR102120896B1 (en) * | 2013-07-25 | 2020-06-10 | 삼성디스플레이 주식회사 | Organic light emitting device display apparatus by using the facing targets sputtering apparatus and method for manufacturing the organic light emitting device display apparatus |
-
2004
- 2004-09-22 KR KR1020040076151A patent/KR20060027280A/en not_active Application Discontinuation
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2005
- 2005-09-22 CN CNA2005101066327A patent/CN1752273A/en active Pending
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| KR20060027280A (en) | 2006-03-27 |
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