[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

CN1501484A - 电功率半导体装置 - Google Patents

电功率半导体装置 Download PDF

Info

Publication number
CN1501484A
CN1501484A CNA031476058A CN03147605A CN1501484A CN 1501484 A CN1501484 A CN 1501484A CN A031476058 A CNA031476058 A CN A031476058A CN 03147605 A CN03147605 A CN 03147605A CN 1501484 A CN1501484 A CN 1501484A
Authority
CN
China
Prior art keywords
power semiconductor
electrical power
semiconductor device
mold resin
interarea
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA031476058A
Other languages
English (en)
Other versions
CN1284233C (zh
Inventor
�е�̩
中岛泰
�ȴ�̫־
佐佐木太志
木村享
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=32212020&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CN1501484(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN1501484A publication Critical patent/CN1501484A/zh
Application granted granted Critical
Publication of CN1284233C publication Critical patent/CN1284233C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334—Auxiliary members in encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

本发明提供小型轻量、低成本、且生产率和耐振动性能优良的半导体装置。模制树脂壳体1由环氧树脂等热固化树脂制成，具有上表面1T和底面1B。模制树脂壳体1的非边缘部具有穿过上表面1T和底面1B之间的通孔2。电极3N、3P、4a、4b的一端从模制树脂壳体1的侧面突出。由图3可知，模制树脂壳体1的底面1B露出了散热板5的底面5B。散热板5的通孔2的周围设有开口部6。

Description

电功率半导体装置
技术领域
本发明涉及电功率半导体装置的结构。
背景技术
在常规的电功率半导体装置中，电功率半导体元件用焊锡焊接在绝缘基板的上表面上，绝缘基板的底面也是用焊锡焊接在金属基板的上表面上。电功率半导体元件通过金属连线连接在绝缘基板上的电极上。金属基板被多个螺栓固定在散热片上。用于穿螺栓的安装孔沿金属基板的边缘设置多个，在金属基板的中央设置一个。有一个树脂盒避开金属基板中央的螺栓，固定在金属基板的上表面上。焊接了电功率半导体元件的绝缘基板配置在盒内。盒内注入了用于确保绝缘和保护金属连线的凝胶。另外，在盒内的凝胶上还配置了用于密封的环氧树脂(可参考专利文献1)。
[专利文献1]
特开2000-228490号公报(图1，2)
可是，这种常规半导体装置，由于盒避开了金属基板中央的一个螺栓而固定在金属基板上，所以金属基板的中央部分产生了空间浪费，使装置的体积变大。
另外，由于盒的价格高，所以成本也高。
再有，由于需要凝胶的注入及固化和环氧树脂的注入及固化，所以生产率也低。
另外，当电功率半导体装置用在从外部施加振动的装置(如汽车)上时，盒与金属基板基本上一起振动，而凝胶的振动却比盒与金属基板的振动迟，所以，凝胶和盒与金属基板之间会产生相对位置变动。所以，金属连线会被凝胶拉扯，与电极连接的部分会产生疲劳而破损。
发明内容
本发明是为了解决上述问题而进行的，目的是提供小型轻量、低成本、且生产率高、耐振动的电功率半导体装置。
本发明的半导体装置包括：散热板、电功率半导体元件、模制树脂壳体、以及至少一个通孔。散热板具有相互对置的第一及第二主面。电功率半导体元件配置在第一主面上。模制树脂壳体覆盖散热板及电功率半导体元件，但露出散热板的第二主面。模制树脂壳体具有一个挨着散热板的主面和与其对置的另一主面。至少有一个通孔在模制树脂壳体的非边缘区域，避开电功率半导体元件及散热板，穿过模制树脂壳体的两个主面。
附图说明
图1是本发明实施方案1的电功率半导体装置结构的斜视图；
图2是本发明实施方案1的电功率半导体装置结构的俯视图；
图3是本发明实施方案1的电功率半导体装置结构的仰视图；
图4是省略了模制树脂壳体的本发明实施方案1的电功率半导体装置结构的俯视图；
图5是本发明实施方案1的电功率半导体装置的电路图；
图6是沿图4所示的线VI-VI的剖面结构图；
图7是将本实施方案1的电功率半导体装置安装在散热片的结构剖面图；
图8是将本实施方案1的电功率半导体装置安装在散热片的结构剖面图；
图9是本发明实施方案2的电功率半导体装置的结构剖面图；
图10是本发明实施方案3的电功率半导体装置的结构剖面图；
图11是本发明实施方案4的电功率半导体装置的结构剖面图；
图12是本发明实施方案4的电功率半导体装置的结构剖面图；
图13是本发明实施方案4的电功率半导体装置的结构剖面图；
图14是省略了模制树脂壳体的本实施方案5的电功率半导体装置结构的俯视图；
图15是本发明实施方案5的电功率半导体装置的电路图；
图16是本发明实施方案5的电功率半导体装置结构的斜视图；
图17是本发明实施方案5的变形例的俯视图；
图18是本发明实施方案5的变形例的斜视图；
图19是实施方案1～5的变形例的俯视图；
图20是省略了模制树脂壳体的图19所示电功率半导体装置结构的俯视图；
图21是图20所示电功率半导体装置的电路图。
标号说明
1模制树脂壳体，2通孔，5、5a、5b散热板，6开口部，7a、7b、20a、20b IGBT，8a、8b、21a、21b续流二极管，10散热片，12压板，14螺栓，16、30凹陷部，24间隙
优选实施方案
实施方案1
图1至图3分别为本发明实施方案1的电功率半导体装置结构的斜视图、俯视图及仰视图。模制树脂壳体1由环氧树脂等热固化树脂制成，具有上表面1T和底面1B。在模制树脂壳体1的非边缘部(在此例中接近中央)形成了穿过上表面1T和底面1B之间的通孔2。电极3N、3P、4a、4b各自的一端从模制树脂壳体1的侧面突出。由图3可知，模制树脂壳体1的底面1B露出了散热板5的底面5B。散热板5的通孔2的周围设置了开口部6。
散热板5是厚度为3mm左右的金属板(例如铜板)。模制树脂壳体安装在导电性的散热片上时，在两者之间配置绝缘的隔离材料，或硅树脂和橡胶材料等绝缘材料。也可以不设这种隔离材料和绝缘材料，而在散热板5的底面5B上形成厚度为200μm左右的含有50％左右氮化硼等填充物的绝缘树脂层。另外，还可以在绝缘树脂层的底面形成100μm左右的铜箔，用来防止因夹入了异物而引起绝缘树脂层损坏。
图4是本实施方案1的电功率半导体装置结构俯视图，图中省略了模制树脂壳体1。图5是本实施方案1的电功率半导体装置的电路图。由图5可知，本实施方案1的电功率半导体装置具有：IGBT7a、7b和续流二极管8a、8b。IGBT7a、7b的各集电极和续流二极管8a、8b的各负极都连接在电极3P上。IGBT7a、7b的各发射极和续流二极管8a、8b的各正极都连接在电极3N上。IGBT7a、7b的栅极分别连接在电极4a、4b上。
由图4可知，IGBT7a、7b芯片和续流二极管8a、8b芯片用焊锡焊接在散热板5的上表面5T上。其中，IGBT7a、7b的各集电极和续流二极管8a、8b的各负极形成在各芯片的底面。因此，IGBT7a、7b的各集电极和续流二极管8a、8b的各负极都与散热板5连接。另外，电极3P的另一端用焊锡焊接在散热板5的上表面5T上。这样IGBT7a、7b的各集电极和续流二极管8a、8b的各负极都通过散热板5与电极3P连接。
电极3N、4a、4b的另一端与散热板5的上表面5T之间有几毫米左右的间隙。IGBT7a、7b的各发射极和各栅极、以及续流二极管8a、8b的各正极形成在各芯片的上表面上。IGBT7a、7b的各发射极和续流二极管8a、8b的各正极通过由铝等制成的金属连线9连接在电极3N的另一端上。同样，IGBT7a、7b的各栅极也是通过金属连线8分别连接在电极4a、4b的另一端上。
图6是沿图4所示的VI-VI线的剖面图。模制树脂壳体1覆盖着散热板5、IGBT7a、以及续流二极管8b，但露出了散热板5的底面5B。通孔2避开了散热板5、IGBT7a、以及续流二极管8b。
模制树脂壳体1的底面1B和散热板5的底面5B排列在同一平面内。
图7、8与图6对应，是将本实施方案1的电功率半导体装置安装在散热片10上的结构剖面图。由图7可知，散热片10的上表面隔着硅基导热甘油(图中未示)连接在散热板5的底面5B上。散热片10的上表面形成有螺纹孔11。压板12是厚度为1mm左右的SK钢，上有穿透的螺纹孔13。压板12的底面连接在模制树脂壳体1的上表面1T上。螺栓14穿过螺纹孔11、13以及通孔2，将夹着模制树脂壳体1的散热片10和压板12固定。在螺栓14的头部和模制树脂壳体1的上表面1T之间设有弹簧垫15。
由图8可知，散热片10的上表面隔着硅基导热甘油(图中未示)
连接在散热板5的底面5B上。散热片10的上表面有螺纹孔11。螺栓14穿过螺纹孔11及通孔2，将模制树脂壳体1和散热片10固定。在螺栓14的头部与模制树脂壳体1的上表面1T之间设有弹簧垫15。如上所述，模制树脂壳体1由热固化树脂制成。因为热固化树脂的塑变现象比热可塑树脂小，所以可以将螺栓14或弹簧垫15直接压在模制树脂壳体1的上表面1T上。
因为本实施方案1的电功率半导体装置不用在金属基板上避开金属基板中央的一个螺栓来固定盒，所以，在金属基板中央不会产生空间浪费。另外，螺栓14的头部及弹簧垫15不是压在散热片5的上表面5T上，而是直接压在压板12的上表面或模制树脂壳体1的上表面1T上。因此，不必将螺栓14的头部及弹簧垫15压着的区域设计成散热片5，所以，不必将散热片5设计得很大。因此，比常规电功率半导体装置的体积小。
另外，由于不需要高价的盒，所以比常规电功率半导体装置的成本低。
再有，由于不需要凝胶的注入及固化，所以比常规电功率半导体装置的生产效率高。
另外，即使将电功率半导体装置用在从外部施加振动的装置(如汽车)上，也能够防止因凝胶的拉扯而导致的金属连线的疲劳破损。所以，比常规半导体装置耐振动。
实施方案2
图9与图6对应，是本发明实施方案2的电功率半导体装置结构的剖面图。模制树脂壳体1的底面1B的中央比周边部分突出，成弯曲状。这种弯曲结构可以通过将模制树脂壳体1的材质的固化收缩或成形收缩程度设定得比散热板5的材质的热收缩程度大来实现。另外，模制树脂壳体1材质的线膨胀率最好小于散热板5材质的线膨胀率。例如，散热板5的主要材质是铜时，利用固化收缩率为0.4％左右，线膨胀率为15×10-6/K左右的材料来制作模制树脂壳体1即可。例如在线型酚醛环氧树脂中添加约70％的结晶硅石和熔融硅石的混合物即可。通过改变结晶硅石和熔融硅石的混合比可以调整模制树脂壳体1的线膨胀率。
这样，本实施方案2的电功率半导体装置的模制树脂壳体1的底面1B的中央突出，成弯曲状。因此，如图7所示，用压板12及螺栓14将模制树脂壳体1固定在散热片10上时，能使散热板5紧贴在散热片10上。
另外，模制树脂壳体1材质的线膨胀率小于散热板5材质的线膨胀率时，还可以获得如下效果。即，因IGBT7a、7b等发热而使模制树脂壳体1和散热板5的温度上升时，模制树脂壳体1的底面1B向突出的方向弯曲。因此，在模制树脂壳体1的底面1B挤压散热片10的上表面的方向上产生作用力，所以，能使散热板5紧贴在散热片10上。
实施方案3
图10与图6对应，是本发明实施方案3的电功率半导体装置结构的剖面图。模制树脂壳体1的上表面1T的中央比周边突出，成弯曲状。这种弯曲结构可以通过将模制树脂壳体1材质的固化收缩或成形收缩程度设定得比散热板5材质的热收缩程度小来实现。例如，散热板5的主要材质是铝时，利用线膨胀率为20×10-6/K左右的材料来制作模制树脂壳体1即可。
这样，本实施方案3的电功率半导体装置的模制树脂壳体1的上表面突出，成弯曲状。因此，如图8所示，用螺栓14将模制树脂壳体1固定在散热片10上时，能使散热板5紧贴在散热片10上。
实施方案4
图11～13分别对应于图6、9、10，是本发明实施方案4的电功率半导体装置结构的剖面图。如图3所示，在散热板5的通孔2周围形成了开口部6。如图11～13所示，在模制树脂壳体1的上表面上形成了凹陷部16，与散热板5的开口部6对应。为了缓解应力集中，凹陷部16的剖面形状最好略成U字型。
这样，在本实施方案4的电功率半导体装置中，模制树脂壳体1的形成凹陷部16部分的材料厚度薄。因此，可以用更小的紧固力来使模制树脂壳体1紧贴在散热片10上，所以，可以减小通孔2的孔径，进而减小装置的体积和重量。
另外，可以避免或抑制螺栓14的头部从模制树脂壳体1的上表面突出，所以，即使在图11～13所示的电功率半导体装置上重复配置控制基板，也能减小电功率半导体装置与控制基板之间的距离，进而减小装置的整体体积。
实施方案5
图14是本实施方案5的电功率半导体装置结构的俯视图，图中省略了模制树脂壳体1。另外，图15是本实施方案5的电功率半导体装置的电路图。另外，图16是本实施方案5的电功率半导体装置的斜视图。由图15可知，本实施方案5的电功率半导体装置具有IGBT20a、20b和续流二极管21a、21b。IGBT20a的集电极和续流二极管21a的负极连接在电极22P上。IGBT20b的发射极和续流二极管21b的正极连接在电极22N上。IGBT20a的发射极、IGBT20b的集电极、续流二极管21a的正极、以及续流二极管21b的负极连接在电极220上。IGBT20a、20b的栅极分别连接在电极23a、23b上。
由图14可知，芯片IGBT20a和续流二极管21a用焊锡焊接在散热板5a的上表面上。另外，芯片IGBT20b和续流二极管21b用焊锡焊接在散热板5b的上表面上。
IGBT20a的集电极和续流二极管21a的负极形成在各芯片的底面。因此，IGBT20a的集电极和续流二极管21a的负极与散热板5a连接。而且，电极22P用焊锡焊接在散热板5a的上表面上。这样，IGBT20a的集电极和续流二极管21a的负极都通过散热板5a与电极22P连接。
另外，IGBT20b的集电极和续流二极管21b的负极形成在各芯片的底面上。因此，IGBT20b的集电极和续流二极管21b的负极与散热板5a连接。而且，电极200用焊锡焊接在散热板5b的上表面上。这样，IGBT20b的集电极和续流二极管21b的负极都通过散热板5b与电极200连接。
电极23a、220与散热板5a的上表面之间，电极22N、23b与散热板5b的上表面之间都有几毫米左右的间隙。IGBT20a、20b的发射极和栅极，以及续流二极管21a、21b的正极形成在各芯片的上表面上。IGBT20a的栅极通过金属连线9连接在电极23a上。IGBT20a的发射极和续流二极管21a的正极通过金属连线9连接在电极220上。IGBT20b的栅极过金属连线9连接在电极23b上。
IGBT20b的发射极和续流二极管21b的正极通过金属连线9连接在电极22N上。
由图14可知，散热板5a、5b以开口部6为中心大致对称。因为散热板5a、5b大致对称，所以，可以避免来自螺栓14的应力不均。另外，散热板5a与散热板5b之间有间隙24，用于确保绝缘。由图16可知，在模制树脂壳体1的上表面1T上形成了与间隙24对应的沟状凹陷部30。为了缓解应力集中，凹陷部30的剖面形状最好略成U字型。如图14所示，间隙24的上部没有配置金属连线9。因此，即使形成与间隙24对应的凹陷部30也可以确保绝缘。
这样，本实施方案5的电功率半导体装置，在模制树脂壳体1的上表面1T上形成了与间隙24对应的凹陷部30。因此，在图9、10所示的电功率半导体装置中，螺栓14的挤压容易使模制树脂壳体1变形。这样，可以用更小的紧固力使模制树脂壳1紧贴在散热片10上，所以，可以减小通孔2的孔径，进而减小装置的体积和重量。
图17、18是本实施方案5的变形例的俯视图和斜视图。由图17可知，散热板被分割成4张散热板51～54。散热板51～54以开口部6为中心大致对称。在相邻的散热板51～54之间有间隙24a、24b。
由图18可知，在模制树脂壳体1的上表面上形成了与间隙24a、24b对应的凹陷部30a、30b。
图19是上述实施方案1～5的变形例的俯视图。在上述实施方案1～5中，在模制树脂壳体1的大致中央部设置了一个通孔2，但也可以如图19所示，在模制树脂壳体1的非边缘部设置多个(此例中为两个)通孔2a、2b。图20是图19所示的电功率半导体装置结构的俯视图，图中省略了模制树脂壳体，图21是图20所示电功率半导体装置的电路图。如图20、21所示，电功率半导体装置具有：IGBT71～76、续流二极管81～86、以及电极P、N、U、V、W、G1～G6。
发明效果
本发明可以提供小型轻量、低成本、且生产率和耐振动性能优良的半导体装置。

Claims (13)

1.一种电功率半导体装置，包括：散热板(5/5a，5b)，具有相互对置的第一主面(5T)和第二主面(5B)；电功率半导体元件(7a，7b，8a，8b)，配置在所述第一主面上；模制树脂壳体(1)，覆盖所述散热板及所述半导体元件，但露出所述第二主面，具有一个挨着所述第二主面的主面(1B)和与主面(1B)对置的另一主面(1T)；以及至少一个通孔(2/2a，2b)，在所述模制树脂壳体的非边缘区域，避开所述电功率半导体元件及所述散热板，穿过所述模制树脂壳体的两个主面之间。
2.如权利要求1所述的电功率半导体装置，其特征在于，在所述散热板的所述通孔周围设有开口部(6)。
3.如权利要求2所述的电功率半导体装置，其特征在于，在所述主面(1T)上设有与所述开口部对应的凹陷部(16)。
4.如权利要求1所述的电功率半导体装置，其特征在于，具有多个所述散热板(5a，5b)，所述多个散热板以所述通孔为中心大致对称。
5.如权利要求4所述的电功率半导体装置，其特征在于，在所述主面(1T)上设有与所述散热板之间的间隙对应的沟状凹陷部(30)。
6.如权利要求3或5所述的电功率半导体装置，其特征在于，所述凹陷部的剖面形状大致成U字型。
7.如权利要求1所述的电功率半导体装置，其特征在于，所述模制树脂壳体的所述主面(1B)的中央突出，成弯曲状。
8.如权利要求1所述的电功率半导体装置，其特征在于，所述模制树脂壳体材质的固化收缩或成形收缩的程度大于所述散热板材质的热收缩程度。
9.如权利要求8所述的电功率半导体装置，其特征在于，所述模制树脂壳体材质的线膨胀率小于所述散热板材质的线膨胀率。
10.如权利要求1所述的电功率半导体装置，其特征在于还具有：
散热片(10)，与所述第二主面连接；压板(12)，与所述主面(1T)连接；以及螺栓(14)，穿过所述通孔，将夹着所述模制树脂壳体的所述散热片与所述压板固定。
11.如权利要求1所述的电功率半导体装置，其特征在于，所述模制树脂壳体的所述主面(1T)的中央突出，成弯曲状。
12.如权利要求1所述的电功率半导体装置，其特征在于，所述模制树脂壳体材质的固化收缩或成形收缩程度小于所述散热板材质的热收缩程度。
13.如权利要求1所述的电功率半导体装置，其特征在于还具有：散热片(10)，与所述第二主面连接；螺栓(14)，穿过所述通孔，将所述模制树脂壳体和所述散热片固定。
CNB031476058A 2002-11-13 2003-07-14 电功率半导体装置 Expired - Lifetime CN1284233C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP329243/2002 2002-11-13
JP2002329243A JP3740117B2 (ja) 2002-11-13 2002-11-13 電力用半導体装置
JP329243/02 2002-11-13

Publications (2)

Publication Number Publication Date
CN1501484A true CN1501484A (zh) 2004-06-02
CN1284233C CN1284233C (zh) 2006-11-08

Family

ID=32212020

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB031476058A Expired - Lifetime CN1284233C (zh) 2002-11-13 2003-07-14 电功率半导体装置

Country Status (5)

Country Link
US (1) US6903457B2 (zh)
JP (1) JP3740117B2 (zh)
KR (1) KR100709278B1 (zh)
CN (1) CN1284233C (zh)
DE (1) DE10331335C5 (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100420049C (zh) * 2005-02-02 2008-09-17 银河制版印刷有限公司 发光二极管模块的基板结构
CN108886036A (zh) * 2016-04-04 2018-11-23 三菱电机株式会社 功率模块、功率半导体装置及功率模块制造方法
CN112864113A (zh) * 2021-02-10 2021-05-28 华为技术有限公司 功率器件、功率器件组件与相关装置

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3988607B2 (ja) * 2002-10-01 2007-10-10 株式会社デンソー ハウジング
US7436060B2 (en) * 2004-06-09 2008-10-14 Lsi Corporation Semiconductor package and process utilizing pre-formed mold cap and heatspreader assembly
JP4583122B2 (ja) * 2004-09-28 2010-11-17 三菱電機株式会社 半導体装置及びその製造方法
CN101032849B (zh) * 2006-03-08 2010-06-09 深圳富泰宏精密工业有限公司 定位治具的成型方法
DE102006013017B4 (de) * 2006-03-20 2014-11-06 R. Stahl Schaltgeräte GmbH Gehäuse mit Wärmebrücke
KR101391925B1 (ko) * 2007-02-28 2014-05-07 페어차일드코리아반도체 주식회사 반도체 패키지 및 이를 제조하기 위한 반도체 패키지 금형
JP5288161B2 (ja) 2008-02-14 2013-09-11 東芝ライテック株式会社 発光モジュール及び照明装置
US7821141B2 (en) * 2008-02-22 2010-10-26 Infineon Technologies Ag Semiconductor device
US7919854B2 (en) * 2008-08-15 2011-04-05 Infineon Technologies Ag Semiconductor module with two cooling surfaces and method
DE102009002993B4 (de) * 2009-05-11 2012-10-04 Infineon Technologies Ag Leistungshalbleitermodul mit beabstandeten Schaltungsträgern
US8482904B2 (en) * 2010-05-25 2013-07-09 Lear Corporation Power module with current sensing
JP5380376B2 (ja) 2010-06-21 2014-01-08 日立オートモティブシステムズ株式会社 パワー半導体装置
JP5569400B2 (ja) * 2011-01-07 2014-08-13 株式会社デンソー 半導体モジュール
US8878483B2 (en) 2011-01-14 2014-11-04 Lear Corporation Electronics unit with current sensing
CN102306637A (zh) * 2011-08-31 2012-01-04 昆山锦泰电子器材有限公司 带有三极管的组装散热片
JP5843539B2 (ja) * 2011-09-16 2016-01-13 三菱電機株式会社 半導体装置及び当該半導体装置の製造方法
US8970020B2 (en) 2011-09-30 2015-03-03 Rohm Co., Ltd. Semiconductor device
JP5988882B2 (ja) * 2013-01-17 2016-09-07 三菱電機株式会社 半導体装置
CN105359262B (zh) 2013-07-04 2019-02-19 三菱电机株式会社 半导体装置的制造方法、半导体装置
JP5700092B2 (ja) 2013-09-06 2015-04-15 トヨタ自動車株式会社 半導体装置
JP2016012709A (ja) * 2014-06-30 2016-01-21 サンケン電気株式会社 半導体装置
JP6327140B2 (ja) * 2014-12-15 2018-05-23 株式会社デンソー 電子装置
JP6365322B2 (ja) * 2015-01-23 2018-08-01 三菱電機株式会社 半導体装置
DE102015112450B3 (de) * 2015-07-30 2016-12-29 Danfoss Silicon Power Gmbh Leistungshalbleiterbaugruppe und Verfahren zum Herstellen eines Leistungsmoduls und der Leistungshalbleiterbaugruppe
JP2017224788A (ja) * 2016-06-17 2017-12-21 ミヨシ電子株式会社 電子回路装置
JP7221930B2 (ja) 2017-07-12 2023-02-14 ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト パワー半導体モジュール
EP3444839A1 (en) * 2017-08-18 2019-02-20 Infineon Technologies Austria AG Assembly and method for mounting an electronic component to a substrate
EP3682475A1 (en) 2017-09-15 2020-07-22 Finar Module Sagl Packaging method and joint technology for an electronic device
DE102018217456B4 (de) * 2018-10-11 2020-07-09 Conti Temic Microelectronic Gmbh Elektronische Steuervorrichtung und Verfahren zur Herstellung einer elektronischen Steuervorrichtung
EP3660896A1 (en) * 2018-11-30 2020-06-03 Infineon Technologies AG Semiconductor arrangement
DE102019111367A1 (de) * 2019-05-02 2020-11-05 Danfoss Silicon Power Gmbh Leistungselektronik-Modul mit verbesserter Kühlung
DE102019111366B3 (de) 2019-05-02 2020-05-14 Fachhochschule Kiel Kompaktes Leistungselektronik-Modul mit vergrößerter Kühlfläche
JP7149907B2 (ja) 2019-09-04 2022-10-07 三菱電機株式会社 半導体装置および半導体素子
JP2022010604A (ja) * 2020-06-29 2022-01-17 日本電産サンキョー株式会社 電子機器
US11444002B2 (en) * 2020-07-29 2022-09-13 Taiwan Semiconductor Manufacturing Company, Ltd. Package structure

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3539875A (en) * 1968-09-25 1970-11-10 Philips Corp Hardware envelope with semiconductor mounting arrangements
JPS59218759A (ja) * 1983-05-27 1984-12-10 Toshiba Corp 半導体装置
CA1307355C (en) * 1988-05-26 1992-09-08 David C. Degree Soft-faced semiconductor component backing
KR100307465B1 (ko) * 1992-10-20 2001-12-15 야기 추구오 파워모듈
US5493153A (en) * 1992-11-26 1996-02-20 Tokyo Tungsten Co., Ltd. Plastic-packaged semiconductor device having a heat sink matched with a plastic package
JP3225457B2 (ja) * 1995-02-28 2001-11-05 株式会社日立製作所 半導体装置
DE19630173C2 (de) * 1996-07-26 2001-02-08 Semikron Elektronik Gmbh Leistungsmodul mit Halbleiterbauelementen
DE19646396C2 (de) * 1996-11-11 2001-06-28 Semikron Elektronik Gmbh Leistungshalbleitermodul für verschiedene Schaltungsvarianten
US6583444B2 (en) * 1997-02-18 2003-06-24 Tessera, Inc. Semiconductor packages having light-sensitive chips
JPH1117071A (ja) * 1997-06-23 1999-01-22 Hitachi Ltd 半導体装置
JP2000228490A (ja) 1999-02-05 2000-08-15 Hitachi Ltd パワー半導体モジュール
JP3690171B2 (ja) * 1999-03-16 2005-08-31 株式会社日立製作所 複合材料とその製造方法及び用途
JP2001059923A (ja) * 1999-06-16 2001-03-06 Seiko Epson Corp 光モジュール及びその製造方法、半導体装置並びに光伝達装置
JP3866880B2 (ja) * 1999-06-28 2007-01-10 株式会社日立製作所 樹脂封止型電子装置
JP4540884B2 (ja) * 2001-06-19 2010-09-08 三菱電機株式会社 半導体装置
JP2003007933A (ja) * 2001-06-27 2003-01-10 Denso Corp 樹脂封止型半導体装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100420049C (zh) * 2005-02-02 2008-09-17 银河制版印刷有限公司 发光二极管模块的基板结构
CN108886036A (zh) * 2016-04-04 2018-11-23 三菱电机株式会社 功率模块、功率半导体装置及功率模块制造方法
CN108886036B (zh) * 2016-04-04 2022-06-24 三菱电机株式会社 功率模块、功率半导体装置及功率模块制造方法
CN112864113A (zh) * 2021-02-10 2021-05-28 华为技术有限公司 功率器件、功率器件组件与相关装置

Also Published As

Publication number Publication date
US6903457B2 (en) 2005-06-07
CN1284233C (zh) 2006-11-08
KR100709278B1 (ko) 2007-04-19
JP2004165406A (ja) 2004-06-10
DE10331335B4 (de) 2008-10-16
DE10331335C5 (de) 2014-11-20
KR20040042793A (ko) 2004-05-20
US20040089931A1 (en) 2004-05-13
JP3740117B2 (ja) 2006-02-01
DE10331335A1 (de) 2004-06-09

Similar Documents

Publication Publication Date Title
CN1284233C (zh) 电功率半导体装置
CN1226785C (zh) 半导体功率器件
CN1226789C (zh) 大功率半导体器件的供电及散热装置
CN101030570A (zh) 半导体装置
CN1127761C (zh) 半导体装置
CN1675765A (zh) 高功率mcm封装
CN1790692A (zh) 半导体装置及其制造方法
CN101060157A (zh) 发光二极管封装件及其制造方法
CN1574316A (zh) 具有冷却系统的半导体装置
CN1825645A (zh) Led外壳及其制造方法
CN1638119A (zh) 电力半导体装置
CN1561148A (zh) 装配到印刷电路板上的散热器
CN100347849C (zh) 逆变器及其制造方法，以及装有这种逆变器的电动汽车
CN103187409A (zh) 基于引线框架的led阵列封装光源模块
CN1812091A (zh) 半导体装置
CN1643628A (zh) 双电荷层电容器
CN1906766A (zh) 半导体装置的模块结构
CN1231971C (zh) 表面安装型片式半导体器件和制造方法
CN101047274A (zh) 动力电池组用散热装置及动力电池组
EP1860696A1 (en) Semiconductor module
CN1249869C (zh) 半导体激光装置及其制造方法
CN201688160U (zh) 一种基于金属芯pcb基板的led光源模块
CN1362738A (zh) 功率半导体模块
CN1220777A (zh) 半导体装置及其制造方法
CN1210789C (zh) 具有散热结构的半导体封装元件

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20061108