CN1312770C - Protective transistors - Google Patents
Protective transistors Download PDFInfo
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- CN1312770C CN1312770C CNB031290663A CN03129066A CN1312770C CN 1312770 C CN1312770 C CN 1312770C CN B031290663 A CNB031290663 A CN B031290663A CN 03129066 A CN03129066 A CN 03129066A CN 1312770 C CN1312770 C CN 1312770C
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- triode
- resistance
- collector electrode
- controllable silicon
- emitter
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Abstract
The present invention relates to an improved structure of a triode with the function of over-current protection or over-voltage protection. The present invention has the main scheme that a base electrode b of an inner triode T is connected with positive electrodes t1 of a resistor R1 and a controlled silicon G, and the other end of the resistor R1 is an outer base electrode B; an emitting electrode e of the inner triode and a g electrode of the controlled silicon are connected in parallel with a resistor R2, and the other end of the resistor R2 and a negative electrode t2 of the controlled silicon are connected in parallel with an outer emitting electrode E; a collecting electrode c of the inner triode is the collecting electrode C of the triode, wherein the inner triode can be an ordinary semiconductor triode, can be a Darlington pipe, or can be a field effect pipe. Therefore, the present invention has the characteristics that the structure is simple, arrangement is reasonable and compact, the triode has the function of the over-current protection or the over-voltage protection by slightly increasing cost on the existing semiconductor triode, the service life of the triode can be obviously extended, etc.
Description
Technical field
The present invention relates to a kind of electronic device, especially relate to a kind of triode and integrally-built improvement thereof with function of overcurrent or overvoltage protection.
Background technology
Existing known transistor system in conjunction with forming the tube core that two PN junctions are formed, draws three electrodes and the outer encapsulated member formation of emitter, base stage, collector electrode by three block semiconductor materials respectively.There are emitter current, base current, collector current to flow through this transistor during work, though wherein base current is less, but controlling the size of bigger emitter current and collector current, when especially emitter current and collector current short circuit or other abnormal failure occur because of external circuit sometimes, cause electric current greater than normal value, make transistor in the work produce overheated and burn.
In order to protect triode not burnt, people once did many effort.For example; someone has proposed the utility application of " band protection transistor circuit ballast " (91213989.7) by name at the triode in the fluorescent lamp ballast circuit; this ballast is by power supply rectification filter circuit; oscillating circuit; electrical equipment such as triode protection are formed; it mainly is to increase by two suitable resistance resistance between the two triode CE utmost points, has solved the prior art undesirable element and has caused that pulse voltage damages triode, has improved ballast functional reliability and life-span.
The somebody is at the problem of the transistor in the circuit because of heating burnout; proposed to have " transistor " (00238087.0) of overheated self-protection; it is to seal a thermistor chip in known triode; the base circuit of this thermistor chip and transistor tube core is in series, and can also be in series with emitter circuit or collector circuit.
Summary of the invention
The present invention mainly be solve existing transistor overcurrent or overvoltage protective property not good enough, the technical problem that useful life is short etc.
The present invention also solves existing transistor overcurrent simultaneously or the overvoltage crowbar structure is comparatively complicated, and wiring is comparatively complicated, is unfavorable for the technical problem of installation and maintenance etc.
Above-mentioned technical problem of the present invention is mainly solved by following technical proposals: the base stage b connecting resistance R of triode T in described
1Anodal t with controllable silicon G
1, resistance R
1The other end be outer base stage B; The emitter e of interior triode and the silicon controlled g utmost point are connected to described resistance R
2Resistance R
2The other end and silicon controlled negative pole t
2And connect and be outer emitter E; The collector electrode c of triode is the collector electrode C of triode in described.Wherein, described interior triode can be the general semiconductor triode, also can be Darlington transistor, perhaps is field effect transistor.
Described resistance R in this triode
2After changing thermistor PTC into, the triode described in the present invention has the effect of overtemperature protection.
Usually, described resistance R
1Resistance be 50 Ω-200 Ω; Described resistance R
2Resistance be that 0.1 Ω-2.0 Ω is advisable.
As preferably, the pedestal that the outer collector electrode C of described triode is a triode is provided with the metal level that links to each other with outer emitter E being located on the insulating barrier of pedestal, be equipped with resistance R on it respectively
2And the anodal t of controllable silicon G
1End; And described pedestal be provided with in triode T, its collector electrode c fuses with it, be positioned at its upper end emitter e and described resistance R
2And the g utmost point of controllable silicon G joins; The base stage that is positioned at the triode intermediate layer is by the negative pole t of lead-in wire with controllable silicon G
2End and resistance R
1Join resistance R
1The other end and outer base stage B join.
As preferably, described in triode T, resistance R
2And resistance R
1And controllable silicon G is encapsulated as one; Described outer base stage B, outer collector electrode C and outer emitter E tripod secured in parallel are in an end of triode, and described outer collector electrode C is provided with radiator.
Therefore, it is comparatively simple that the present invention has structure, connection and reasonable arrangement, compactness, and only needing slightly increases the some cost on existing transistor, promptly make it to have the effect of overcurrent or overvoltage protection, can obviously improve the characteristics such as useful life of triode.This triode can extensively be suitable in the electronic apparatus, more is applicable to the electronic product of various Switching Power Supplies, industrial control circuit and pressurizer and so on.
Description of drawings
Accompanying drawing 1 is a kind of internal circuit schematic diagram of the present invention;
Accompanying drawing 2 is another kind of internal circuit schematic diagrames of the present invention;
Accompanying drawing 3 is the third internal circuit schematic diagrames of the present invention;
Accompanying drawing 4 is arrangement schematic diagrames of a kind of concrete production of the present invention.
Embodiment
Below by embodiment, and in conjunction with the accompanying drawings, technical scheme of the present invention is described in further detail.
Embodiment 1: the pedestal that the outer collector electrode C of described triode is a triode which is provided with an insulating barrier 5; On described insulating barrier 5, be provided with the metal level that links to each other with outer emitter E, on this metal level, be equipped with resistance R respectively
2And the anodal t of controllable silicon G
1End; Described controllable silicon G can adopt four layers of N utmost point and the extremely alternate structure of P, and its upper end is shaped on metal level, is negative pole t
2End, its lower end is the anodal t of controllable silicon G
1End, its last layer is the described g utmost point; And described pedestal be provided with in triode T, its collector electrode c fuses with it, be positioned at its upper end emitter e and described resistance R
2And the g utmost point of controllable silicon G joins; The base stage that is positioned at the triode intermediate layer is by the negative pole t of lead-in wire with controllable silicon G
2End and resistance R
1Join resistance R
1The other end and outer base stage B join (referring to accompanying drawing 4).Like this, the base stage b connecting resistance R of triode T in described
1Anodal t with controllable silicon G
1, resistance R
1The other end be outer base stage B; The emitter e of interior triode and the silicon controlled g utmost point are connected to described resistance R
2Resistance R
2The other end and silicon controlled negative pole t
2And connect and be outer emitter E; The collector electrode c of triode is the collector electrode C (referring to accompanying drawing 1) of triode in described.Then, described outer base stage B, outer collector electrode C and outer emitter E are connected to secured in parallel on the tripod of triode body 2 one ends with lead-in wire respectively, its spacing size, specification are all with reference to the arrangements of common triode pin, and described outer collector electrode C is provided with radiator.Triode T, resistance R in described
2And resistance R
1And controllable silicon G arrange finish after, adopt normal packet encapsulation technique and technology, pack the housing 4 of making integral body with materials such as metal or epoxy resin.Wherein, described resistance R
1Resistance be 100 Ω; Described resistance R
2Resistance be that 0.25 Ω is advisable.
Tripod of the present invention can be connected with near it electronic device by the connection of common triode.Therefore, can be widely used in the electronic product of various Switching Power Supplies, industrial control circuit and pressurizer and so on.
During use, when operating current during in normal range (NR), the Control current of the base stage B resistance R of flowing through
1Enter interior triode, the electric current of its emitter is through resistance R
2Flow to emitter E, and the collector electrode of interior triode and collector electrode C concurrent.Therefore, its service behaviour is basic mutually roughly the same with former interior triode.
If because of the external circuit short circuit or when other unusual fault occurring, cause the electric current of emitter to heighten, make resistance R
2The potential difference at two ends increases, when surpassing certain value (for example 0.7V), and controllable silicon G conducting, base voltage is by short circuit, and voltage goes to zero, and interior triode T is cut off, and promptly the electric current between collector electrode C and emitter E is cut off, thereby has protected interior triode effectively.
Embodiment 2: make above-mentioned common triode into Darlington transistor, the corresponding tripod of described Darlington transistor and the connection of embodiment 1 be (referring to accompanying drawing 2) mutually roughly the same, its circuit working principle both also mutually roughly the same, so be omitted at this.
Embodiment 3: change above-mentioned common triode into field effect transistor, and described resistance R
2Use thermistor PTC instead, other structure and device mutually roughly the same, described is the connection mutually roughly the same (referring to accompanying drawing 3) of corresponding tripod and the embodiment 1 of field effect transistor.When thermistor PTC heating; its resistance increases, when making the voltage difference at its two ends surpass set point (for example 0.7V), and controllable silicon G conducting; its grid voltage is by short circuit; voltage goes to zero, and field effect transistor T is by pinch off, and promptly the electric current between collector electrode C and emitter E is cut off; thereby protected this field effect transistor T etc. not to be damaged effectively; avoid breakdown, improved the useful life of device, guarantee entire circuit operation safely reliably and with long-term.Other content is omitted at this referring to embodiment 1.
Claims (10)
1. a protection triode comprises body and three pins provided thereon, and it is built-in with interior three pipe and resistance, it is characterized in that the base stage b connecting resistance R of described interior triode T
1Anodal t with controllable silicon G
1, resistance R
1The other end be outer base stage B; The emitter e of interior triode and the silicon controlled g utmost point are connected to described resistance R
2Resistance R
2The other end and silicon controlled negative pole t
2And connect and be outer emitter E; The collector electrode c of triode is the collector electrode C of triode in described.
2. protection triode according to claim 1 is characterized in that described interior triode is a Darlington transistor.
3. protection triode according to claim 1 is characterized in that described interior triode is a field effect transistor.
4. according to claim 1 or 2 or 3 described protection triodes, it is characterized in that described resistance R
2Be thermistor PTC.
5. according to claim 1 or 2 or 3 described protection triodes, it is characterized in that described resistance R
1Resistance be 50 Ω-200 Ω; Described resistance R
2Resistance be 0.1 Ω-2.0 Ω.
6. according to claim 1 or 2 or 3 described protection triodes, the pedestal that the outer collector electrode C that it is characterized in that described triode is a triode is provided with the metal level that links to each other with outer emitter E being located on the insulating barrier of pedestal (5), is equipped with resistance R on it respectively
2And the anodal t of controllable silicon G
1End; And described pedestal be provided with in triode T, its collector electrode c fuses with it, be positioned at its upper end emitter e and described resistance R
2And the g utmost point of controllable silicon G joins; The base stage that is positioned at the triode intermediate layer is by the negative pole t of lead-in wire with controllable silicon G
2End and resistance R
1Join resistance R
1The other end and outer base stage B join.
7. protection triode according to claim 4, the collector electrode C that it is characterized in that described outer triode is the pedestal of triode, is provided with the metal level that links to each other with outer emitter E being located on the insulating barrier of pedestal (5), is equipped with resistance R on it respectively
2And the anodal t of controllable silicon G
1End; And described pedestal be provided with in triode T, its collector electrode c fuses with it, be positioned at its upper end emitter e and described resistance R
2And the g utmost point of controllable silicon G joins; The base stage that is positioned at the triode intermediate layer is by the negative pole t of lead-in wire with controllable silicon G
2End and resistance R
1Join resistance R
1The other end and outer base stage B join.
8. protection triode according to claim 5, the pedestal that the outer collector electrode C that it is characterized in that described triode is a triode is provided with the metal level that links to each other with outer emitter E being located on the insulating barrier of pedestal (5), is equipped with resistance R on it respectively
2And the anodal t of controllable silicon G
1End; And described pedestal be provided with in triode T, its collector electrode c fuses with it, be positioned at its upper end emitter e and described resistance R
2And the g utmost point of controllable silicon G joins; The base stage that is positioned at the triode intermediate layer is by the negative pole t of lead-in wire with controllable silicon G
2End and resistance R
1Join resistance R
1The other end and outer base stage B join.
9. protection triode according to claim 6 is characterized in that described interior triode T, resistance R
2Resistance R
1And controllable silicon G is encapsulated as one; Described outer base stage B, outer collector electrode C and outer emitter E tripod secured in parallel are in an end of triode, and described outer collector electrode C is provided with radiator.
10. according to claim 1 or 2 or 3 described protection triodes, it is characterized in that described interior triode T, resistance R
2And resistance R
1And controllable silicon G is encapsulated as one; Described outer base stage B, outer collector electrode C and outer emitter E tripod secured in parallel are in an end of triode, and described outer collector electrode C is provided with radiator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031290663A CN1312770C (en) | 2003-06-01 | 2003-06-01 | Protective transistors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031290663A CN1312770C (en) | 2003-06-01 | 2003-06-01 | Protective transistors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1553504A CN1553504A (en) | 2004-12-08 |
| CN1312770C true CN1312770C (en) | 2007-04-25 |
Family
ID=34322361
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031290663A Expired - Fee Related CN1312770C (en) | 2003-06-01 | 2003-06-01 | Protective transistors |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1312770C (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5419764A (en) * | 1977-07-13 | 1979-02-14 | Desupureitetsuku Kk | Drive control device for electrostatic apparatus |
| CN2119071U (en) * | 1991-06-29 | 1992-10-14 | 朱竹庆 | Circuit ballast with protective triode |
| CN2627653Y (en) * | 2003-06-01 | 2004-07-21 | 李帮庆 | Protected type triode |
-
2003
- 2003-06-01 CN CNB031290663A patent/CN1312770C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5419764A (en) * | 1977-07-13 | 1979-02-14 | Desupureitetsuku Kk | Drive control device for electrostatic apparatus |
| US4224557A (en) * | 1977-07-13 | 1980-09-23 | Displaytek Corporation Of Sanko | Controlling unit for A.C. driving an electrostatic device |
| CN2119071U (en) * | 1991-06-29 | 1992-10-14 | 朱竹庆 | Circuit ballast with protective triode |
| CN2627653Y (en) * | 2003-06-01 | 2004-07-21 | 李帮庆 | Protected type triode |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1553504A (en) | 2004-12-08 |
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