CN112951103B - Micro-LED manufacturing method for improving sub-pixel light emitting balance - Google Patents
Micro-LED manufacturing method for improving sub-pixel light emitting balance Download PDFInfo
- Publication number
- CN112951103B CN112951103B CN202110115072.0A CN202110115072A CN112951103B CN 112951103 B CN112951103 B CN 112951103B CN 202110115072 A CN202110115072 A CN 202110115072A CN 112951103 B CN112951103 B CN 112951103B
- Authority
- CN
- China
- Prior art keywords
- sub
- pixels
- pixel
- light
- array substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 238000000034 method Methods 0.000 claims abstract description 42
- 239000007788 liquid Substances 0.000 claims abstract description 41
- 239000002096 quantum dot Substances 0.000 claims abstract description 41
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 26
- 238000005286 illumination Methods 0.000 claims abstract description 25
- 239000000084 colloidal system Substances 0.000 claims abstract description 23
- 238000007789 sealing Methods 0.000 claims description 11
- 238000004020 luminiscence type Methods 0.000 claims description 3
- 239000000565 sealant Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 7
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 239000003086 colorant Substances 0.000 description 12
- 238000005530 etching Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical group 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/7005—Production of exposure light, i.e. light sources by multiple sources, e.g. light-emitting diodes [LED] or light source arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
- H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
本发明涉及一种提升子像素发光均衡的Micro‑LED制造方法,该方法包括:在阵列基板的受光面涂覆光刻胶;调整掩膜版,使掩膜版的透光区对应至每个显示像素;维持掩膜版与阵列基板相对位置不变,采用入射方向不同的三组光源同时透过掩膜版的透光区对不同组别的子像素进行曝光;其中,每组光源对应一组相同颜色的子像素,每组光源的光照强度和光照时间根据与该组光源对应颜色的子像素需填充的量子点胶体体积决定;使用显影液对阵列基板上的光刻胶进行第一时间的溶解;烘干阵列基板,并对子像素进行刻蚀形成三种深度不同的储液槽。该方法有利于提高子像素的发光亮度均衡,提升显示效果。
The invention relates to a Micro-LED manufacturing method for improving the luminous balance of sub-pixels. The method includes: coating photoresist on the light-receiving surface of an array substrate; adjusting a mask so that the light-transmitting area of the mask corresponds to each Display pixels; keep the relative position of the mask and the array substrate unchanged, and use three groups of light sources with different incident directions to simultaneously pass through the light-transmitting area of the mask to expose different groups of sub-pixels; wherein, each group of light sources corresponds to a A group of sub-pixels of the same color, the illumination intensity and illumination time of each group of light sources are determined according to the volume of quantum dot colloid to be filled in the sub-pixels of the corresponding color of the group of light sources; the photoresist on the array substrate is subjected to the first time using the developer solution. dissolve; dry the array substrate, and etch the sub-pixels to form three liquid storage tanks with different depths. The method is beneficial to improve the luminous brightness balance of the sub-pixels and improve the display effect.
Description
技术领域technical field
本发明属于显示器领域,特别涉及一种提升子像素发光均衡的Micro-LED制造方法。The invention belongs to the field of displays, and in particular relates to a Micro-LED manufacturing method for improving sub-pixel light emission balance.
背景技术Background technique
Micro-LED(微型发光二极管)是新一代显示技术,比现有的OLED(有机发光二极管)技术亮度更高、发光效率更好、但功耗更低。Micro-LED技术,将LED结构设计进行薄膜化、微小化、阵列化,其尺寸仅在1~10μm等级左右。Micro-LED最大的优势来自于微米等级的间距,每一点像素(pixel)都能定址控制及单点驱动发光、寿命长、应用范畴广。Micro-LED (Micro Light Emitting Diode) is a new generation of display technology that is brighter and more efficient, but consumes less power than existing OLED (Organic Light Emitting Diode) technology. Micro-LED technology, the LED structure design is thinned, miniaturized, and arrayed, and its size is only about 1 to 10 μm. The biggest advantage of Micro-LED comes from the micron-level pitch, each pixel can be addressed and controlled and driven to emit light at a single point, long life, and wide range of applications.
量子点QDs是一种由II-VI或III-V族元素组成的半导体纳米颗粒,其尺寸一般为几纳米至数十纳米之间。量子点材料由于量子限域效应的存在,原本连续的能带变成分立的能级结构,受外界激发后可发射可见光。量子点材料由于其发光峰具有较小的半高宽且发光颜色可通过量子点材料的尺寸、结构或成分进行调节,应用在Micro-LED显示领域将会提升颜色的饱和度和色域。量子点材料由于其特性,作为发光晶粒常应用于Micro-LED中。Quantum dot QDs are semiconductor nanoparticles composed of II-VI or III-V elements, and their size is generally between several nanometers to tens of nanometers. Due to the existence of the quantum confinement effect, the quantum dot material turns the originally continuous energy band into a discrete energy level structure, which can emit visible light after being excited by the outside world. Since quantum dot materials have a small luminescence peak with a small half-height width and the luminescence color can be adjusted by the size, structure or composition of the quantum dot material, the application in the field of Micro-LED display will improve the color saturation and color gamut. Due to their characteristics, quantum dot materials are often used in Micro-LEDs as light-emitting crystals.
在Micro-LED中,封装红、绿、蓝三种颜色对应的量子点时一般采用相同大小的储液槽(凹槽),但是不同颜色对应的量子点胶体封装的量不同,导致对储液槽进行封胶时,封胶厚度也不同,进一步导致不同颜色子像素的发光亮度不均衡,显示效果变差。In Micro-LED, the same size storage tank (groove) is generally used to encapsulate the quantum dots corresponding to the three colors of red, green and blue. When the grooves are encapsulated, the encapsulation thicknesses are also different, which further leads to unbalanced luminous brightness of sub-pixels of different colors, and poor display effect.
发明内容SUMMARY OF THE INVENTION
本发明的目的在于提供一种提升子像素发光均衡的Micro-LED制造方法,该方法有利于提高子像素的发光亮度均衡,提升显示效果。The purpose of the present invention is to provide a Micro-LED manufacturing method for improving the luminous balance of the sub-pixels, which is beneficial to improve the luminous brightness balance of the sub-pixels and improve the display effect.
为实现上述目的,本发明采用的技术方案是:一种提升子像素发光均衡的Micro-LED制造方法,所述Micro-LED包括红色子像素、绿色子像素以及蓝色子像素,每个子像素包括一个储液槽,每个储液槽中填充量子点胶体,每个储液槽下方设置一个UV-LED;所述方法包括:In order to achieve the above object, the technical solution adopted in the present invention is: a method for manufacturing a Micro-LED that improves the luminous balance of sub-pixels, the Micro-LED includes red sub-pixels, green sub-pixels and blue sub-pixels, and each sub-pixel includes a liquid storage tank, each liquid storage tank is filled with quantum dot colloid, and a UV-LED is arranged under each liquid storage tank; the method includes:
在阵列基板的受光面涂覆光刻胶;其中,所述阵列基板包括阵列排布的显示像素,每个显示像素包括所述红色子像素、所述绿色子像素以及所述蓝色子像素;A photoresist is coated on the light-receiving surface of the array substrate; wherein, the array substrate includes display pixels arranged in an array, and each display pixel includes the red sub-pixel, the green sub-pixel and the blue sub-pixel;
调整掩膜版,使所述掩膜版的透光区对应至每个所述显示像素;adjusting the mask so that the light-transmitting area of the mask corresponds to each of the display pixels;
维持所述掩膜版与所述阵列基板相对位置不变,采用入射方向不同的三组光源同时透过所述掩膜版的透光区对不同组别的子像素进行曝光;其中,每组光源对应一组相同颜色的子像素,每组光源的光照强度和光照时间根据与该组光源对应颜色的子像素需填充的量子点胶体体积决定;Keeping the relative position of the mask and the array substrate unchanged, three groups of light sources with different incident directions are used to simultaneously pass through the light-transmitting area of the mask to expose different groups of sub-pixels; The light source corresponds to a group of sub-pixels of the same color, and the illumination intensity and illumination time of each group of light sources are determined according to the volume of quantum dot colloid that needs to be filled in the sub-pixels of the color corresponding to the group of light sources;
使用显影液对所述阵列基板上的光刻胶进行第一时间的溶解;using a developer to dissolve the photoresist on the array substrate for the first time;
烘干所述阵列基板,并对所述子像素进行刻蚀形成三种深度不同的储液槽。The array substrate is dried, and the sub-pixels are etched to form three liquid storage tanks with different depths.
进一步地,所述方法还包括:Further, the method also includes:
根据所述三组光源的入射方向、所述子像素的曝光宽度以及同一个显示像素中两个相邻子像素的间隙,获得所述掩膜版与阵列基板之间的距离,所述掩膜版与所述阵列基板之间的距离d满足d=(p+q)×|cotθ1|的关系;According to the incident directions of the three groups of light sources, the exposure width of the sub-pixels, and the gap between two adjacent sub-pixels in the same display pixel, the distance between the mask and the array substrate is obtained. The distance d between the plate and the array substrate satisfies the relationship of d=(p+q)×|cotθ 1 |;
其中,p为所述子像素的曝光宽度,q为同一个显示像素中两个相邻子像素的间隙,θ1为第一入射角,θ2为第二入射角,θ3为第三入射角,所述第一入射角θ1、所述第二入射角θ2和所述第三入射角θ3分别为所述三组光源的入射方向与所述阵列基板法线的夹角,且有θ2=-θ1,θ3=0。where p is the exposure width of the sub-pixel, q is the gap between two adjacent sub-pixels in the same display pixel, θ 1 is the first incident angle, θ 2 is the second incident angle, and θ 3 is the third incident angle The first incident angle θ 1 , the second incident angle θ 2 and the third incident angle θ 3 are the angles between the incident directions of the three groups of light sources and the normal to the array substrate, and There are θ 2 =-θ 1 and θ 3 =0.
进一步地,所述方法还包括:Further, the method also includes:
控制所述掩膜版,使所述掩膜版与阵列基板之间的距离d保持不变;controlling the reticle to keep the distance d between the reticle and the array substrate unchanged;
调整所述第一入射角θ1和所述第二入射角θ2使三组所述光源对不同组别的子像素进行曝光。Adjusting the first incident angle θ 1 and the second incident angle θ 2 enables three groups of the light sources to expose different groups of sub-pixels.
进一步地,所述方法还包括:Further, the method also includes:
控制所述光源,使所述第一入射角θ1和所述第二入射角θ2保持不变;controlling the light source so that the first incident angle θ 1 and the second incident angle θ 2 remain unchanged;
调整所述掩膜版,改变所述掩膜版与所述阵列基板之间的距离d使三组所述光源对不同组别的子像素进行曝光。The reticle is adjusted, and the distance d between the reticle and the array substrate is changed, so that the three groups of the light sources expose different groups of sub-pixels.
进一步地,所述显示像素包括的三个子像素为等大的矩形,且所述子像素和透光区大小相同。Further, the three sub-pixels included in the display pixel are rectangles of equal size, and the sizes of the sub-pixels and the light-transmitting area are the same.
进一步地,多个所述显示像素构成一列像素组,所述一列像素组分为红色子像素组、绿色子像素组和蓝色子像素组,且所述红色子像素组、绿色子像素组、蓝色子像素组以及透光区为等宽矩形。Further, a plurality of the display pixels form a column of pixel groups, and the column of pixel groups is divided into a red sub-pixel group, a green sub-pixel group and a blue sub-pixel group, and the red sub-pixel group, green sub-pixel group, The blue sub-pixel group and the light-transmitting area are rectangles of equal width.
进一步地,所述方法还包括:往所述储液槽中加入与所述储液槽的深度对应体积的量子点胶体。Further, the method further includes: adding a volume of quantum dot colloid corresponding to the depth of the liquid storage tank into the liquid storage tank.
进一步地,所述方法还包括:在加入量子点胶体后,对所述储液槽进行封胶,形成厚度一致的封胶层。Further, the method further includes: after adding the quantum dot colloid, sealing the liquid storage tank to form a sealing layer with a uniform thickness.
进一步地,所述光刻胶为正性光刻胶。Further, the photoresist is a positive photoresist.
相较于现有技术,本发明具有以下有益效果:1、本发明调整掩膜版,使掩膜版的透光区对应至每个显示像素。这样可以保证在同一时间对显示像素中的三个子像素进行曝光。2、本发明维持掩膜版与阵列基板相对位置不变,采用入射方向不同的三组光源同时透过掩膜版的透光区对不同组别的子像素进行曝光。本发明维持掩膜版和阵列基板相对位置不变就可以完成全部子像素的曝光,不用进行对位,避免了对位误差导致的曝光不完全,而且本发明只进行一次曝光,减少了曝光次数,提高生产效率。3、本发明中每组光源对应一组相同颜色的子像素,每组光源的光照强度和光照时间是根据与该组光源对应颜色的子像素需填充的量子点胶体体积决定。光刻胶由于光照强度和光照时间的不同,在显影液中的溶解度也不同,这样的特点可以保证不同组光源对应的储液槽在刻蚀时形成的深度也不同。综上,本发明通过同一时间采用三组光照强度和光照时间不同的光源对三个子像素进行曝光,然后显影刻蚀形成三种深度不同的储液槽,这样可以使不同颜色子像素的储液槽封装相对应体积的量子点胶体,进而可以保证每一个储液槽的封胶厚度一致,提高子像素的发光亮度均衡,提升显示效果。Compared with the prior art, the present invention has the following beneficial effects: 1. The present invention adjusts the mask so that the light-transmitting area of the mask corresponds to each display pixel. This ensures that the three sub-pixels in the display pixel are exposed at the same time. 2. The present invention maintains the relative position of the mask and the array substrate unchanged, and uses three groups of light sources with different incident directions to simultaneously pass through the light-transmitting area of the mask to expose different groups of sub-pixels. In the present invention, the relative positions of the mask and the array substrate remain unchanged, and the exposure of all sub-pixels can be completed without alignment, thereby avoiding incomplete exposure caused by alignment errors, and the present invention only performs one exposure, reducing the number of exposures. ,Increase productivity. 3. In the present invention, each group of light sources corresponds to a group of sub-pixels of the same color, and the illumination intensity and illumination time of each group of light sources are determined according to the volume of quantum dot colloid to be filled in sub-pixels of the corresponding color of the group of light sources. Due to the difference in light intensity and light time, the solubility of photoresist in the developer is also different. This feature can ensure that the depths of the reservoirs corresponding to different groups of light sources are also different during etching. To sum up, the present invention exposes three sub-pixels by using three sets of light sources with different illumination intensity and illumination time at the same time, and then develops and etches to form three kinds of liquid storage tanks with different depths, so that the liquid storage tanks of different color sub-pixels can be formed. The tank encapsulates a corresponding volume of quantum dot colloid, thereby ensuring that the thickness of the encapsulant of each liquid storage tank is consistent, improving the balance of luminous brightness of the sub-pixels, and improving the display effect.
附图说明Description of drawings
图1是本发明实施例的方法实现流程示意图。FIG. 1 is a schematic diagram of a method implementation flowchart according to an embodiment of the present invention.
图2是本发明实施例中Micro-LED的结构示意图。FIG. 2 is a schematic structural diagram of a Micro-LED in an embodiment of the present invention.
图3是本发明实施例中第一具体情况的曝光光路示意图。FIG. 3 is a schematic diagram of an exposure light path in a first specific situation in an embodiment of the present invention.
图4是本发明实施例中第二具体情况的曝光光路示意图。FIG. 4 is a schematic diagram of an exposure light path of a second specific situation in the embodiment of the present invention.
图5是本发明实施例中子像素与透光区的关系示意图。FIG. 5 is a schematic diagram of the relationship between sub-pixels and light-transmitting regions in an embodiment of the present invention.
图6是本发明实施例中显示像素组与透光区的关系示意图。FIG. 6 is a schematic diagram showing the relationship between a display pixel group and a light-transmitting area in an embodiment of the present invention.
图7是现有技术中Micro-LED的结构示意图。FIG. 7 is a schematic structural diagram of a Micro-LED in the prior art.
具体实施方式Detailed ways
本发明公开了一种提升子像素发光均衡的Micro-LED制造方法,本领域技术人员可以借鉴本文内容,适当改进技术细节实现。特别需要指出的是,所有类似的替换和改动对本领域技术人员来说是显而易见的,它们都被视为包括在本发明。本发明的方法及应用已经通过较佳实施例进行了描述,相关人员明显能在不脱离本发明内容、精神和范围内对本文所述的方法和应用进行改动或适当变更与组合,来实现和应用本发明技术。The present invention discloses a Micro-LED manufacturing method for improving the luminous balance of sub-pixels, and those skilled in the art can learn from the content of this article and appropriately improve the technical details for implementation. It should be particularly pointed out that all similar substitutions and modifications are obvious to those skilled in the art, and they are deemed to be included in the present invention. The method and application of the present invention have been described through the preferred embodiments, and it is obvious that relevant persons can make changes or appropriate changes and combinations of the methods and applications described herein without departing from the content, spirit and scope of the present invention to achieve and Apply the technology of the present invention.
不同颜色子像素对应的量子点产生相同亮度的光吸收的能量不同,这导致要使不同颜色子像素发光均衡就要采用不同体型的量子点胶体。然而一般Micro-LED阵列基板的每个储液槽的大小一致,这使得不同颜色子像素的储液槽封胶时的厚度也不一致可以如图7所示。图7中,701为封胶层,702为储液槽,703为UV-LED。封胶厚度不同导致量子点发光透过封胶层后的亮度也不同,这样不同颜色子像素的发光亮度不均衡,显示效果变差。The quantum dots corresponding to the sub-pixels of different colors absorb different energy of light with the same brightness, which leads to the use of quantum dot colloids of different shapes in order to make the sub-pixels of different colors emit light evenly. However, in general, the size of each liquid storage tank of the Micro-LED array substrate is the same, which makes the thickness of the liquid storage tanks of different color sub-pixels also inconsistent when sealing, as shown in FIG. 7 . In FIG. 7, 701 is a sealing layer, 702 is a liquid storage tank, and 703 is a UV-LED. Different thicknesses of the sealant lead to different brightness of the quantum dots after emitting light through the sealant layer, so that the light-emitting brightness of the sub-pixels of different colors is not balanced, and the display effect is deteriorated.
有鉴于此,如图1-6所示,本发明实施例提供了一种提升子像素发光均衡的Micro-LED制造方法,Micro-LED包括红色子像素、绿色子像素以及蓝色子像素,每个子像素包括一个储液槽,每个储液槽下方设置一个UV-LED,每个储液槽中填充有量子点胶体。如图1所示,该方法包括:In view of this, as shown in FIGS. 1-6 , an embodiment of the present invention provides a method for manufacturing a Micro-LED that improves the light emission balance of sub-pixels. The Micro-LED includes a red sub-pixel, a green sub-pixel and a blue sub-pixel, each of which is Each sub-pixel includes a liquid storage tank, a UV-LED is arranged under each liquid storage tank, and each liquid storage tank is filled with quantum dot colloid. As shown in Figure 1, the method includes:
步骤S101:在阵列基板的受光面涂覆光刻胶。Step S101: Coating photoresist on the light-receiving surface of the array substrate.
其中,阵列基板包括阵列排布的显示像素,每个显示像素包括红色子像素、绿色子像素以及蓝色子像素。Wherein, the array substrate includes display pixels arranged in an array, and each display pixel includes a red sub-pixel, a green sub-pixel and a blue sub-pixel.
需要说明的是,每个子像素呈现的颜色是由填充的量子点决定的。量子点每当受到光或电的刺激,量子点便会发出有色光线,光线的颜色由量子点的组成材料和大小形状决定,一般颗粒若越大,会吸收长波,颗粒越小,会吸收短波。8纳米大小的量子点,可吸收长波的红色,显示出蓝色,2纳米大小的量子点,可吸收短波的蓝色,呈现出红色。这一特性使得量子点能够改变光源发出的光线颜色。所以不同颜色的子像素对应的量子点大小也不同。It should be noted that the color presented by each sub-pixel is determined by the filled quantum dots. Whenever a quantum dot is stimulated by light or electricity, the quantum dot will emit colored light. The color of the light is determined by the material, size and shape of the quantum dot. Generally, the larger the particle is, the longer the wavelength will be absorbed, and the smaller the particle will be, the shorter the wavelength will be absorbed. . Quantum dots with a size of 8 nanometers can absorb long-wave red and show blue, and quantum dots with a size of 2 nanometers can absorb short-wave blue and show red. This property enables quantum dots to change the color of light emitted by a light source. Therefore, the quantum dot sizes corresponding to sub-pixels of different colors are also different.
可选的,光刻胶为正性光刻胶。Optionally, the photoresist is a positive photoresist.
需要说明的是,光刻胶是一种有机化合物,它被紫外光曝光后,在显影溶液中的溶解度会发生变化。正性光刻胶是光刻胶的一种,它在进行曝光后,曝光部分可以溶解于显影液中,不曝光部分不可以溶解。本发明实施例所采用的的正性光刻胶在显影液中的溶解度随着光照强度和光照时间的增加而提高。It should be noted that the photoresist is an organic compound, and its solubility in the developing solution will change after it is exposed to ultraviolet light. Positive photoresist is a kind of photoresist. After exposure, the exposed part can be dissolved in the developing solution, and the unexposed part cannot be dissolved. The solubility of the positive photoresist used in the embodiments of the present invention in the developing solution increases with the increase of the illumination intensity and the illumination time.
步骤S102:调整掩膜版,使掩膜版的透光区对应至每个显示像素。Step S102: Adjust the mask so that the light-transmitting area of the mask corresponds to each display pixel.
需要说明的是,掩膜版包括透光区和非透光区。透光区用于透过光源对显示像素中的各个子像素进行曝光,非透光区用于遮挡光源,避免阵列基板上的其它位置的光刻胶被曝光,后续溶解在显影液中。使掩膜版的透光区对应至每个显示像素的目的在于,使光源能够同时对三个不同颜色的子像素进行曝光,增加生产效率。It should be noted that the mask includes a light-transmitting area and a non-light-transmitting area. The light-transmitting area is used to expose each sub-pixel in the display pixel through the light source, and the non-light-transmitting area is used to block the light source to prevent the photoresist at other positions on the array substrate from being exposed and subsequently dissolved in the developer. The purpose of making the light-transmitting area of the mask correspond to each display pixel is to enable the light source to expose three sub-pixels of different colors at the same time, thereby increasing the production efficiency.
步骤S103:维持掩膜版与阵列基板相对位置不变,采用入射方向不同的三组光源同时透过掩膜版的透光区对不同组别的子像素进行曝光。Step S103 : maintaining the relative positions of the mask and the array substrate unchanged, and using three groups of light sources with different incident directions to simultaneously pass through the light-transmitting regions of the mask to expose different groups of sub-pixels.
需要说明的是,维持掩膜版与阵列基板相对位置不变,可以解决移动掩膜版对不同颜色子像素进行曝光的对位误差,导致子像素部分区域重复曝光或者未曝光问题。采用入射方向不同的三组光源同时透过掩膜版的透光区对不同组别的子像素进行曝光。这样可以通过只通过一次照射完成全部子像素的曝光,提高了曝光效率,提高了产能。It should be noted that maintaining the relative position of the reticle and the array substrate unchanged can solve the alignment error of exposing sub-pixels of different colors by moving the reticle, resulting in repeated exposure or unexposed parts of sub-pixels. Three groups of light sources with different incident directions are used to expose different groups of sub-pixels through the light-transmitting area of the mask at the same time. In this way, exposure of all sub-pixels can be completed by only one irradiation, thereby improving exposure efficiency and increasing productivity.
其中,每组光源对应一组相同颜色的子像素,每组光源的光照强度和光照时间是根据与该组光源对应颜色的子像素需填充的量子点胶体体积决定。Wherein, each group of light sources corresponds to a group of sub-pixels of the same color, and the illumination intensity and illumination time of each group of light sources are determined according to the volume of quantum dot colloid that needs to be filled in sub-pixels of the color corresponding to the group of light sources.
需要说明的是,因为不同颜色子像素的量子点在同样功率的UV-LED照射下要生产相同亮度,需要量子点不同,即量子点胶体体积不一样。所以在量子点胶体体积不同的情况下,要使不同颜色子像素的封胶层相同,用于装载量子点胶体的储液槽深度要不同。本发明实施例采用的光刻胶随着光照强度和光照时间的增加在显影液中的溶解度增加,根据这个特性可以利用不同光照时间和光照强度的光源进行曝光,从而刻蚀出不同深度的储液槽。综上,本发明根据不同颜色子像素对应的量子点胶体体积,确定用采用多深的储液槽,再根据储液槽深度,确定光源的照射强度与照射时间。It should be noted that, because quantum dots of different color sub-pixels need to produce the same brightness under the same power of UV-LED irradiation, different quantum dots are required, that is, the volume of quantum dot colloids is different. Therefore, in the case of different volumes of quantum dot colloids, to make the sealing layers of different color sub-pixels the same, the depths of the liquid storage tanks for loading quantum dot colloids should be different. The solubility of the photoresist used in the embodiment of the present invention in the developer increases with the increase of the light intensity and light time. tank. To sum up, the present invention determines the depth of the liquid storage tank to be used according to the quantum dot colloid volume corresponding to the sub-pixels of different colors, and then determines the irradiation intensity and irradiation time of the light source according to the depth of the liquid storage tank.
可选的,在一具体实施例中,入射方向不同的三组光源分别包括:第一光源、第二光源以及第三光源,第一光源对红色子像素进行曝光,第二光源对绿色子像素进行曝光,第三光源对蓝色子像素进行曝光。Optionally, in a specific embodiment, the three groups of light sources with different incident directions respectively include: a first light source, a second light source and a third light source. The first light source exposes the red sub-pixels, and the second light source exposes the green sub-pixels. Exposure is performed, and the third light source exposes the blue sub-pixels.
其中,在第一光源、第二光源、第三光源的光照时间相同下,光照强度:第一光源<第二光源<第三光源。Wherein, under the same illumination time of the first light source, the second light source, and the third light source, the illumination intensity is: first light source<second light source<third light source.
在在第一光源、第二光源、第三光源的光照强度相同下,光照时间:第一光源<第二光源<第三光源。Under the same illumination intensity of the first light source, the second light source, and the third light source, the illumination time: the first light source<the second light source<the third light source.
在光照时间和光照强度均不相同的情况下,经过三组光源照射后,需要保证各个颜色子像素上的光刻胶溶解度:红色子像素<绿色子像素<蓝色子像素。In the case where the illumination time and intensity are different, after being irradiated by three sets of light sources, it is necessary to ensure the solubility of the photoresist on each color sub-pixel: red sub-pixel < green sub-pixel < blue sub-pixel.
需要说明的是,在一般情况下,红、绿、蓝三种子像素对应的量子点胶体产生相同亮度的光,所需要的量子点胶体体积:红色子像素<绿色子像素<蓝色子像素。It should be noted that, in general, the quantum dot colloids corresponding to the three sub-pixels of red, green and blue produce light of the same brightness, and the required volume of the quantum dot colloid is: red sub-pixel < green sub-pixel < blue sub-pixel.
步骤S104:使用显影液对阵列基板上的光刻胶进行第一时间的溶解。Step S104 : using a developer to dissolve the photoresist on the array substrate for the first time.
需要说明的是,因为本发明采用的是正性光刻胶,所以只有经过曝光的光刻胶才能溶解于显影液中,且光刻胶的溶解度随着光照时间和光照强度的增加而增加。经过相同时间的溶解,在不同颜色的子像素上形成的凹槽深度也不同,后面刻蚀时,刻蚀形成的储液槽深度也不同。It should be noted that, because the present invention adopts positive photoresist, only the exposed photoresist can be dissolved in the developing solution, and the solubility of the photoresist increases with the increase of illumination time and illumination intensity. After the same time of dissolution, the depths of grooves formed on sub-pixels of different colors are also different, and the depths of the liquid storage grooves formed by etching are also different during subsequent etching.
步骤S105:烘干阵列基板,并对子像素进行刻蚀形成三种深度不同的储液槽。Step S105 : drying the array substrate, and etching the sub-pixels to form three liquid storage tanks with different depths.
需要说明的是,经过显影后要先烘干阵列基板才能对刻蚀。因为刻蚀分为干法刻蚀和湿法刻蚀,其中有可能会采用液体材料进行刻蚀,如果不烘干,容易污染刻蚀材料。It should be noted that, after developing, the array substrate must be dried before etching. Because etching is divided into dry etching and wet etching, liquid materials may be used for etching, and if not dried, the etching materials are easily contaminated.
可选的,该方法还包括:在储液槽底部设置UV-LED。Optionally, the method further includes: arranging UV-LEDs at the bottom of the liquid storage tank.
可选的,该方法还包括:往储液槽中加入与储液槽的深度对应体积的量子点胶体。Optionally, the method further includes: adding a volume of quantum dot colloid corresponding to the depth of the liquid storage tank into the liquid storage tank.
可选的,该方法还包括:对储液槽进行封胶,形成厚度一致的封胶层。Optionally, the method further includes: sealing the liquid storage tank to form a sealing layer with a uniform thickness.
在一具体实施例中,本发明实施例制造的Micro-LED如图2所示,201为封胶层,202为红色子像素的储液槽,203为绿色子像素的储液槽,204为蓝色子像素的储液槽,205为UV-LED,206为阵列基板。其中,封胶层201中的各个封胶层厚度相同。In a specific embodiment, the Micro-LED manufactured in the embodiment of the present invention is shown in FIG. 2 , 201 is the sealing layer, 202 is the liquid storage tank of the red sub-pixel, 203 is the liquid storage tank of the green sub-pixel, and 204 is the liquid storage tank of the green sub-pixel. The liquid storage tank of the blue sub-pixel, 205 is the UV-LED, and 206 is the array substrate. The thickness of each sealing layer in the
可选的,该方法还包括:Optionally, the method further includes:
根据光源的三组入射方向、子像素的曝光宽度以及同一个显示像素中两个相邻子像素的间隙,获得掩膜版与阵列基板之间的距离,掩膜版与阵列基板之间的距离d满足d=(p+q)×|cotθ1|的关系;According to the three groups of incident directions of the light source, the exposure width of the sub-pixels, and the gap between two adjacent sub-pixels in the same display pixel, the distance between the reticle and the array substrate, and the distance between the reticle and the array substrate are obtained. d satisfies the relationship of d=(p+q)×|cotθ 1 |;
其中,p为子像素的曝光宽度,q为同一个显示像素中两个相邻子像素的间隙,θ1为第一入射角,θ2为第二入射角,θ3为第三入射角,第一入射角θ1、第二入射角θ2和第三入射角θ3分别为三组光源的入射方向与阵列基板法线的夹角,且有θ2=-θ1,θ3=0。Among them, p is the exposure width of the sub-pixel, q is the gap between two adjacent sub-pixels in the same display pixel, θ 1 is the first incident angle, θ 2 is the second incident angle, θ 3 is the third incident angle, The first incident angle θ 1 , the second incident angle θ 2 and the third incident angle θ 3 are respectively the angles between the incident directions of the three groups of light sources and the normal to the array substrate, and θ 2 =−θ 1 , θ 3 =0 .
需要说明的是,每一个子像素的曝光宽度都相等,且曝光宽度为子像素在阵列基板正视面上的投影长度。阵列基板的正视面为垂直于显示像素中间子像素中线的面。图3、图4均为阵列基板的正视面的光路图。同一个显示像素中两个相邻子像素的间隙可以为电极。掩膜版与阵列基板保持一定距离才能保证三组不同方向的光源同时对三个不同颜色的子像素进行曝光。It should be noted that the exposure width of each sub-pixel is equal, and the exposure width is the projection length of the sub-pixel on the front surface of the array substrate. The front surface of the array substrate is a surface perpendicular to the center line of the sub-pixels in the middle of the display pixels. FIG. 3 and FIG. 4 are optical path diagrams of the front view of the array substrate. The gap between two adjacent sub-pixels in the same display pixel can be an electrode. A certain distance between the mask and the array substrate can ensure that three groups of light sources in different directions can simultaneously expose three sub-pixels of different colors.
可选的,在一具体实施例中,当同一个显示像素中的两个相邻子像素的间隙为0时,即q=0时,进行曝光时的光路如图3所示,301为掩膜版,302为同一个显示像素的三个子像素。则掩膜版与阵列基板之间的距离d、子像素的曝光宽度p、同一个显示像素中两个相邻子像素的间隙q、第一入射角θ1、第二入射角θ2和第三入射角θ3具有d=p×|cotθ1|的关系。Optionally, in a specific embodiment, when the gap between two adjacent sub-pixels in the same display pixel is 0, that is, when q=0, the light path during exposure is shown in FIG. 3 , and 301 is a mask. Stencil, 302 is three sub-pixels of the same display pixel. Then the distance d between the mask and the array substrate, the exposure width p of the sub-pixels, the gap q between two adjacent sub-pixels in the same display pixel, the first incident angle θ 1 , the second incident angle θ 2 and the third The three incident angles θ 3 have a relationship of d=p×|cotθ 1 |.
可选的,在一具体实施例中,当同一个显示像素中的两个相邻子像素的间隙大于0时,即q>0时,进行曝光时的光路如图4所示,401为掩膜版,402为同一个显示像素的三个子像素。则掩膜版与阵列基板之间的距离d、子像素的曝光宽度p、同一个显示像素中两个相邻子像素的间隙q、第一入射角θ1、第二入射角θ2和第三入射角θ3具有d=(p+q)×|cotθ1|的关系。Optionally, in a specific embodiment, when the gap between two adjacent sub-pixels in the same display pixel is greater than 0, that is, when q>0, the light path during exposure is shown in FIG. 4 , and 401 is a mask. Stencil, 402 is three sub-pixels of the same display pixel. Then the distance d between the mask and the array substrate, the exposure width p of the sub-pixels, the gap q between two adjacent sub-pixels in the same display pixel, the first incident angle θ 1 , the second incident angle θ 2 and the third The three incident angles θ 3 have a relationship of d=(p+q)×|cotθ 1 |.
可选的,该方法还包括:Optionally, the method further includes:
控制掩膜版,使掩膜版与阵列基板之间的距离d保持不变;Control the mask to keep the distance d between the mask and the array substrate unchanged;
调整第一入射角θ1和第二入射角θ2使三组光源对不同组别的子像素进行曝光。Adjusting the first incident angle θ 1 and the second incident angle θ 2 enables the three groups of light sources to expose different groups of sub-pixels.
需要说明的是,通过调整第一入射角θ1和第二入射角θ2使三组光源对不同组别的子像素进行曝光,避免移动掩膜版模组导致透光区无法与各个显示像素对应,导致曝光效果变差。It should be noted that, by adjusting the first incident angle θ 1 and the second incident angle θ 2 , the three groups of light sources are exposed to different groups of sub-pixels, so as to avoid moving the reticle module and causing the light-transmitting area to be unable to communicate with each display pixel. Corresponding, resulting in poor exposure.
可选的,该方法还包括:Optionally, the method further includes:
控制光源,使第一入射角θ1和第二入射角θ2保持不变;Controlling the light source so that the first incident angle θ 1 and the second incident angle θ 2 remain unchanged;
调整掩膜版,改变掩膜版与阵列基板之间的距离d使三组光源对不同组别的子像素进行曝光。Adjust the reticle, and change the distance d between the reticle and the array substrate, so that the three groups of light sources expose different groups of sub-pixels.
需要说明的是,装载阵列基板时需要移动掩膜版,在那时同时调整掩膜版,改变掩膜版与阵列基板之间的距离d使三组光源对不同组别的子像素进行曝光。这样可以有效节省总的制造时间。It should be noted that the reticle needs to be moved when loading the array substrate, and the reticle is adjusted at the same time, and the distance d between the reticle and the array substrate is changed so that the three groups of light sources can expose different groups of sub-pixels. This can effectively save the overall manufacturing time.
可选的,显示像素包括的三个子像素为等大的矩形,且子像素和透光区大小相同。Optionally, the three sub-pixels included in the display pixel are rectangles of equal size, and the sub-pixels and the light-transmitting area have the same size.
如图5所示,显示像素501包括三个子像素,透光区为与子像素等大的矩形。图5中未示出子像素之间的间隙,不对本发明进行限定。As shown in FIG. 5 , the
可选的,多个显示像素构成一列像素组,一列像素组分为红色子像素组、绿色子像素组和蓝色子像素组,且红色子像素组、绿色子像素组、蓝色子像素组以及透光区为等宽矩形。Optionally, a plurality of display pixels form a column of pixel groups, and a column of pixel groups is divided into a red sub-pixel group, a green sub-pixel group, and a blue sub-pixel group, and the red sub-pixel group, the green sub-pixel group, and the blue sub-pixel group. And the light-transmitting area is a rectangle of equal width.
如图6所示,多个显示像素构成一列像素组601,601中含有红色子像素组、绿色子像素组和蓝色子像素组。且红色子像素组、绿色子像素组、蓝色子像素组以及透光区602为等宽矩形。图6中,未示出显示像素与显示像素之间的间隙,也未示出同一个显示像素中相邻子像素之间的间隙,不对本发明进行限定。As shown in FIG. 6 , a plurality of display pixels form a column of
本发明调整掩膜版,使掩膜版的透光区对应至每个显示像素。这样可以保证在同一时间对显示像素中的三个子像素进行曝光。本发明实施例维持所述掩膜版与所述阵列基板相对位置不变,采用入射方向不同的三组光源同时透过所述掩膜版的所述透光区对不同组别的子像素进行曝光。本发明实施例维持掩膜版和阵列基板相对位置不变就可以完成全部子像素的曝光,不用进行对位,避免了对位误差导致的曝光不完全,而且本发明实施例只进行一次曝光,减少了曝光次数,提高生产效率。本发明实施例中每组所述光源对应一组相同颜色的所述子像素,每组光源的光照强度和光照时间是根据与该组光源对应颜色的所述子像素需填充的量子点胶体体积决定。光刻胶由于光照强度和光照时间的不同,在显影液中的溶解度也不同,这样的特点可以保证不同组光源对应的储液槽在刻蚀时形成的深度也不同。综上,本发明实施例通过同一时间采用三组光照强度和光照时间不同的光源对三个子像素进行曝光,然后显影刻蚀形成三种深度不同的储液槽,这样可以使不同颜色子像素的储液槽封装相对应体积的量子点胶体,进而可以保证每一个储液槽的封胶厚度一致,提高子像素的发光亮度均衡,提升显示效果。The invention adjusts the mask so that the light-transmitting area of the mask corresponds to each display pixel. This ensures that the three sub-pixels in the display pixel are exposed at the same time. In the embodiment of the present invention, the relative positions of the mask and the array substrate are kept unchanged, and three groups of light sources with different incident directions are used to simultaneously pass through the light-transmitting regions of the mask to perform different sets of sub-pixels on the mask. exposure. In the embodiment of the present invention, the relative positions of the mask and the array substrate are kept unchanged, and the exposure of all sub-pixels can be completed without alignment, which avoids incomplete exposure caused by alignment errors, and the embodiment of the present invention only performs one exposure, The number of exposures is reduced and the production efficiency is improved. In the embodiment of the present invention, each group of the light sources corresponds to a group of the sub-pixels of the same color, and the illumination intensity and illumination time of each group of light sources are based on the volume of quantum dot colloid to be filled in the sub-pixels of the color corresponding to the group of light sources Decide. Due to the difference in light intensity and light time, the solubility of photoresist in the developer is also different. This feature can ensure that the depths of the reservoirs corresponding to different groups of light sources are also different during etching. To sum up, in the embodiment of the present invention, three sets of light sources with different illumination intensity and illumination time are used to expose three sub-pixels at the same time, and then develop and etch to form three liquid storage tanks with different depths, which can make the sub-pixels of different colors. The liquid storage tank encapsulates a corresponding volume of quantum dot colloid, which can ensure that the thickness of the encapsulation glue in each liquid storage tank is consistent, improve the brightness balance of the sub-pixels, and improve the display effect.
需要说明的是,在本文中,诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来,而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且,术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含,从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素,而且还包括没有明确列出的其他要素,或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下,由语句“包括一个……”限定的要素,并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。It should be noted that, in this document, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any relationship between these entities or operations. any such actual relationship or sequence exists. Moreover, the terms "comprising", "comprising" or any other variation thereof are intended to encompass a non-exclusive inclusion such that a process, method, article or device that includes a list of elements includes not only those elements, but also includes not explicitly listed or other elements inherent to such a process, method, article or apparatus. Without further limitation, an element qualified by the phrase "comprising a..." does not preclude the presence of additional identical elements in a process, method, article or apparatus that includes the element.
本说明书中的各个实施例均采用相关的方式描述,各个实施例之间相同相似的部分互相参见即可,每个实施例重点说明的都是与其他实施例的不同之处。尤其,对于系统实施例而言,由于其基本相似于方法实施例,所以描述的比较简单,相关之处参见方法实施例的部分说明即可。Each embodiment in this specification is described in a related manner, and the same and similar parts between the various embodiments may be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, as for the system embodiments, since they are basically similar to the method embodiments, the description is relatively simple, and for related parts, please refer to the partial descriptions of the method embodiments.
以上所述仅为本发明的较佳实施例而已,并非用于限定本发明的保护范围。凡在本发明的精神和原则之内所作的任何修改、等同替换、改进等,均包含在本发明的保护范围内。The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the protection scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention are included in the protection scope of the present invention.
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110115072.0A CN112951103B (en) | 2021-01-27 | 2021-01-27 | Micro-LED manufacturing method for improving sub-pixel light emitting balance |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110115072.0A CN112951103B (en) | 2021-01-27 | 2021-01-27 | Micro-LED manufacturing method for improving sub-pixel light emitting balance |
Publications (2)
Publication Number | Publication Date |
---|---|
CN112951103A CN112951103A (en) | 2021-06-11 |
CN112951103B true CN112951103B (en) | 2022-07-05 |
Family
ID=76238235
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110115072.0A Active CN112951103B (en) | 2021-01-27 | 2021-01-27 | Micro-LED manufacturing method for improving sub-pixel light emitting balance |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN112951103B (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN205211789U (en) * | 2015-10-22 | 2016-05-04 | 广东昭信光电科技有限公司 | White light LED device based on no cadmium quantum dot phosphor powder |
CN206271743U (en) * | 2016-11-22 | 2017-06-20 | 广州视源电子科技股份有限公司 | Quantum dot led module |
CN108091752A (en) * | 2017-12-22 | 2018-05-29 | 华中科技大学 | A kind of white light LEDs and preparation method thereof |
CN110224012A (en) * | 2019-06-18 | 2019-09-10 | 京东方科技集团股份有限公司 | Display panel and display device |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI536083B (en) * | 2013-09-11 | 2016-06-01 | 友達光電股份有限公司 | Liquid crystal panel and liquid crystal display |
CN104932136B (en) * | 2015-07-01 | 2018-01-26 | 合肥鑫晟光电科技有限公司 | Color membrane substrates and preparation method thereof, display panel and display device |
US10615318B2 (en) * | 2018-02-02 | 2020-04-07 | Huizhou China Star Optoelectronics Technology Co., Ltd. | Quantum dot LED |
-
2021
- 2021-01-27 CN CN202110115072.0A patent/CN112951103B/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN205211789U (en) * | 2015-10-22 | 2016-05-04 | 广东昭信光电科技有限公司 | White light LED device based on no cadmium quantum dot phosphor powder |
CN206271743U (en) * | 2016-11-22 | 2017-06-20 | 广州视源电子科技股份有限公司 | Quantum dot led module |
CN108091752A (en) * | 2017-12-22 | 2018-05-29 | 华中科技大学 | A kind of white light LEDs and preparation method thereof |
CN110224012A (en) * | 2019-06-18 | 2019-09-10 | 京东方科技集团股份有限公司 | Display panel and display device |
Also Published As
Publication number | Publication date |
---|---|
CN112951103A (en) | 2021-06-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US12040435B2 (en) | Light-emitting device and image display apparatus with reflection film on side surface and layers having different refractive indices | |
KR102146549B1 (en) | Micro light emitting diode structure | |
CN105096749B (en) | A kind of display device and preparation method thereof | |
US11335874B2 (en) | Quantum dot color filter substrate, fabricating method thereof, and display panel | |
US20170243916A1 (en) | Capsule Quantum Dot Composition, Light-Emitting Diode, Preparation Methods and Display Apparatus | |
CN111580301B (en) | A color filter substrate, its manufacturing method and display device | |
WO2018227678A1 (en) | Blue light absorption cutoff film and blue light display device | |
WO2019052002A1 (en) | Color film substrate and display device | |
US20100171134A1 (en) | Optical converter and manufacturing method thereof and light emitting diode | |
CN104299973A (en) | Display substrate, preparation method of display substrate and display device | |
CN105355726B (en) | The preparation method of the patterned method of quantum dot layer and quantum stippling film | |
CN108845448B (en) | A Substrate Structure for Improving Light Purity of Quantum Dot Color Filters | |
CN111430444B (en) | Quantum dot display panel and preparation method thereof | |
TWI719775B (en) | Display device | |
CN118435365A (en) | Light emitting device including quantum dot color conversion material and method of manufacturing the same | |
WO2020259351A1 (en) | Display substrate and manufacturing method therefor, and display device | |
CN114566581A (en) | Display panel and method for manufacturing display panel | |
KR20180107385A (en) | Photoluminescence device, method of manufacturing the same and display apparatus having the same | |
WO2021042502A1 (en) | Quantum dot light-emitting device patterning method and quantum dot light-emitting device | |
TWI778492B (en) | Display device | |
CN112947009B (en) | Micro-LED lithography system for improving sub-pixel luminescence balance | |
CN112817213B (en) | Micro-LED preparation system based on RGBW | |
CN111128985A (en) | Display panel and preparation method thereof | |
CN112951103B (en) | Micro-LED manufacturing method for improving sub-pixel light emitting balance | |
CN105511155A (en) | Quantum dot color filter manufacturing method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |