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CN112947673A - Over-temperature protection circuit for low-power chip - Google Patents

Over-temperature protection circuit for low-power chip Download PDF

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Publication number
CN112947673A
CN112947673A CN202110332112.7A CN202110332112A CN112947673A CN 112947673 A CN112947673 A CN 112947673A CN 202110332112 A CN202110332112 A CN 202110332112A CN 112947673 A CN112947673 A CN 112947673A
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nmos transistor
voltage
nmos
operational amplifier
temperature
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黄祥林
李富华
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Suzhou University
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Suzhou University
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only

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Abstract

The invention provides an over-temperature protection circuit for a low-power chip, comprising: the power supply circuit comprises a first current mirror, a second current mirror, a third current mirror, NMOS tubes NM1, NM2, triodes Q1, NM3, an operational amplifier AMP, NMOS tubes NM4, NM5, NM6, NM7, an inverter INV1 and an inverter INV2, wherein the same-phase end of the operational amplifier AMP and the drain electrode of the NMOS tube NM1 are connected, the inverting end of the operational amplifier AMP is connected with the source electrode of the NM6, the voltage of the same-phase end of the operational amplifier AMP is the voltage with negative temperature correlation, the voltage of the inverting end is the voltage with positive temperature correlation, the output end of the operational amplifier AMP is connected with an inverter INV1, the inverter INV1 is connected with an inverter INV2 in series, the output signal VC _ N of the inverter INV1 is connected to the grid electrode of the NMOS tube NM2, the voltage of the non-inverting terminal and the voltage of the inverting terminal of the operational amplifier AMP are compared to each other, so that the output terminal of the operational amplifier AMP outputs a high level or a low level, therefore, the on-off states of the NMOS tube NM2 and the NMOS tube NM3 are changed, and the normal work of the chip is controlled or the chip is protected and closed.

Description

Over-temperature protection circuit for low-power chip
Technical Field
The invention relates to the field of integrated circuit design, in particular to an over-temperature protection circuit for a low-power chip.
Background
The over-temperature protection circuit of the chip is a commonly used protection circuit which always needs to be in an open state, if the chip continuously works in a high-temperature environment, the risk of burning the internal devices of the chip can be caused, so that the over-temperature protection circuit provides protection action when the temperature is too high, has a certain hysteresis function, and enables the chip to work normally again when the temperature is reduced to a safety value.
As shown in fig. 1, a conventional over-temperature protection circuit of a chip mirrors a path of temperature-negatively-dependent current (INTAT) through two resistors, thereby generating a temperature-negatively-dependent Voltage (VNTAT). The operational amplifier AMP used as a comparator is connected with a temperature-independent band-gap reference voltage (Vref) at the non-inverting terminal, and is connected with a voltage with a negative temperature coefficient at the inverting terminal, the output VC of the operational amplifier is connected with the grid terminal of the NMOS tube NM1, and meanwhile, VC is also used as an over-temperature protection signal. When the temperature is lower and no over-temperature occurs, Vref is less than VNTAT, VC is low level, NM1 is cut off, a resistor R1 is connected into a circuit, and the chip works normally; when the temperature continuously rises and exceeds the over-temperature point, Vref is greater than VNTAT, VC jumps from low level to high level, NM1 is conducted, resistor R1 is short-circuited, and the chip protection is closed. Since the resistor R1 is short-circuited, VC returns to low level only when the temperature drops to a value lower than the over-temperature point, so that the chip works normally again.
However, the over-temperature protection circuit of the chip in the prior art is not suitable for a low-power-consumption application environment, and in the low-power-consumption application, the current must be very small, and at this time, a relatively high voltage needs to be generated by flowing through a resistor, and the resistance value of the resistor must be very large, so that the area of the layout must be increased sharply.
In order to solve the problem that the layout area is inevitably overlarge if the over-temperature protection circuit in a low-power consumption application environment, namely a low-power consumption chip, is designed according to the prior art, the invention provides the over-temperature protection circuit which is simple in structure, extremely low in power consumption, free of resistance and capable of greatly reducing the layout area.
Disclosure of Invention
The invention aims to provide an over-temperature protection circuit for a low-power chip, which greatly reduces the layout area, and has a simple structure and extremely low power consumption.
An over-temperature protection circuit for a low power chip, comprising: the first current mirror, the second current mirror, the third current mirror, the NMOS NM1, the NMOS NM2, the transistor Q1, the NMOS NM3, the operational amplifier AMP, the NMOS NM4, the NMOS NM5, the NMOS NM6, the NMOS NM7, the inverter INV1, and the inverter INV2, the NMOS NM1 is connected in series with the NMOS NM2, the transistor Q1 is connected in series with the NMOS NM3, the NMOS NM1 and the NMOS NM2 are connected in parallel with the transistor Q1 and the NMOS NM3 and then connected in series with the first current mirror, the NMOS NM4 is connected in series with the NMOS NM5 and then connected in series with the second current mirror, the NMOS NM6 is connected in series with the NMOS NM7 and then connected in series with the third current mirror, the source of the NMOS NM7 is connected with the source of the NMOS NM4, the common phase terminal (VNTAT AMP) of the operational amplifier AMP and the drain NM1 are connected with the negative voltage of the common phase of the operational amplifier TAT 24, the common phase voltage of the operational amplifier TAT 6, the operational amplifier is the positive phase temperature of the common phase-related to the positive phase-temperature, the output end of the operational amplifier AMP is connected with an inverter INV1, an inverter INV1 is connected with an inverter INV2 in series, an output signal VC _ N of the inverter INV1 is transmitted to the grid electrode of an NMOS tube NM2, an output signal VC _ P of the inverter INV2 is transmitted to the grid electrode of an NMOS tube NM3, and the output end of the operational amplifier AMP is enabled to output high level or low level through comparing the voltage of the non-inverting end and the voltage of the inverting end of the operational amplifier AMP, so that the on-off state of the NMOS tube NM2 and the NMOS tube NM3 is changed, and the normal work of a chip or the protection of the.
In some embodiments, all MOS transistors are enhancement type MOS transistors.
Further, the NMOS transistor NM1, the NMOS transistor NM4, the NMOS transistor NM5, the NMOS transistor NM6, and the NMOS transistor NM7 operate in the sub-threshold region.
In some embodiments, the PMOS transistor PM1 and the PMOS transistor PM2 form a first current mirror of a cascode structure, the PMOS transistor PM3 and the PMOS transistor PM4 form a second current mirror of the cascode structure, the PMOS transistor PM5 and the PMOS transistor PM6 form a third current mirror of the cascode structure, which is used to improve the replication precision of the current mirrors, and gates of the first current mirror, the second current mirror, and the third current mirror are respectively connected to voltage biases of VB1 and VB2, so as to provide current biases for each branch.
Further, the gates of PMOS transistor PM1, PMOS transistor PM3, and PMOS transistor PM5 are biased at VB1, and the gates of PMOS transistor PM2, PMOS transistor PM4, and PMOS transistor PM6 are biased at VB 2.
Further, the ratio of the width-to-length ratio (current ratio) of the second current mirror to the third current mirror is 1: m, M > 0.
In some embodiments, the NMOS transistor NM2 and the NMOS transistor NM3 are NMOS transistors used as switching transistors, a control signal of the NMOS transistor NM2 is VC _ N, a control signal of the NMOS transistor NM3 is VC _ P, the NMOS transistor NM1 is connected to a diode structure, and the transistor Q1 is connected to a diode structure.
Further, the gate of the NMOS transistor NM1 is connected to the drain.
In some embodiments, the ratio of the width-to-length ratio of the NMOS transistor NM4 to the NMOS transistor NM5 is 1: k1, the ratio of the width-length ratio of the NMOS transistor NM6 to the NMOS transistor NM7 is 1: K2.
further, the gate of the NMOS transistor NM4 is connected to the drain, and the gate of the NMOS transistor NM6 is connected to the drain.
In some embodiments, the output signal VC _ N of the inverter INV1 and the output signal VC _ P of the inverter INV2 change the on/off states of the NMOS NM2 and NM3, respectively, to generate hysteresis, and are input to the digital circuit at the back end to provide over-temperature protection.
Further, when the temperature does not exceed the over-temperature point, the voltage of the inverting terminal of the comparison operational amplifier AMP is greater than the voltage of the inverting terminal, VNTAT > VPTAT, the output of the comparison operational amplifier AMP is at a high level, the output signal VC _ N of the inverter INV1 is at a low level, the output signal VC _ P of the inverter INV2 is at a high level, the NMOS 2 is turned off, the path where the NMOS NM1 is located is turned off, the NMOS NM3 is turned on, the transistor Q1 is connected to the circuit, and the chip operates normally.
Further, when the temperature rises to exceed an over-temperature point, the voltage of the in-phase end of the comparison operational amplifier AMP is smaller than the voltage of the out-phase end, VNTAT is smaller than VPTAT, the output of the comparison operational amplifier AMP jumps from high level to low level, the output signal VC _ N of the inverter INV1 jumps to high level, the output signal VC _ P of the inverter INV2 jumps to low level, the NMOS tube NM2 is conducted, the NMOS tube NM1 is connected into a circuit, the NMOS tube NM3 is cut off, the branch where the triode Q1 is located is broken, the over-temperature of the system is indicated, the protection action is triggered, and the chip is protected and closed.
Further, when the temperature drops to be lower than the over-temperature point, the signal VC _ N is at a low level, the signal VC _ P is at a high level, and the chip works normally again.
In some embodiments, the voltage of the source of the NMOS transistor NM7 and the source of the NMOS transistor NM4 is V1, the value of V1 is VGS5-VGS4, VGS5 is the voltage between the gate and the source of the NMOS transistor NM5, VGS4 is the voltage between the gate and the source of the NMOS transistor NM4, and the specific expression of V1 is S1:
Figure BDA0002996531930000031
wherein n is a sub-threshold slope correction factor, VTFor the thermal voltage, K1 is a value of the NMOS transistor NM4 compared with the width and length of the NMOS transistor NM5, I5 is a current flowing through the NMOS transistor NM5, and I4 is a current flowing through the NMOS transistor NM 4.
Similarly, an expression S2 of the voltage VNTAT at the non-inverting terminal of the comparison operational amplifier AMP and a calculation expression of the voltage VPTAT at the inverting terminal of the comparison operational amplifier AMP can be obtained.
Further, the expression of the voltage VPTAT at the inverting terminal of the comparison operational amplifier AMP is S2:
VPTAT＝nVTln(M*K1*K2) (S2)
wherein n is a sub-threshold slope correction factor, VTFor the thermal voltage, M is a value of the third current mirror compared with the width and length of the second current mirror, K1 is a value of the NMOS transistor NM4 compared with the width and length of the NMOS transistor NM5, and K2 is a value of the NMOS transistor NM6 compared with the width and length of the NMOS transistor NM 7.
Further, when the temperature does not exceed the over-temperature point, the voltage V of the non-inverting terminal of the operational amplifier AMP is comparedNTAT1VBE is the voltage between the emitter and base of transistor Q1.
Further, when the temperature rises to exceed the over-temperature point, the voltage V of the non-inverting terminal of the operational amplifier AMP is comparedNTAT2Is S3:
Figure BDA0002996531930000041
wherein, VGS1Is the voltage between the gate and the source of the NMOS transistor NM1, Vth1Is the threshold voltage of NMOS transistor NM1, and n is the sub-threshold slope correction factor，VTIs a thermal voltage, IDTherefore, the current flowing through the NMOS transistor NM1, W is the width of the conduction channel of the NMOS transistor NM1, L is the length of the conduction channel of the NMOS transistor NM1, μnFor electron mobility, COXIs the gate oxide capacitance per unit area of the NMOS transistor NM 1.
Further, as can be seen from expression S3, controlling the value of ID can control the magnitude of the hysteresis quantity, the larger ID, the larger hysteresis quantity, and the smaller ID, the smaller hysteresis quantity. Only when the temperature drops to be lower than the over-temperature point, VC returns to the low level, so that the chip works normally again.
Further, when the temperature continuously rises and does not exceed the over-temperature point TH, due to the cut-off of the NMOS transistor NM2 and the turn-on of the NMOS transistor NM3, the voltage VNTAT of the non-inverting terminal of the comparison operational amplifier AMP changes according to the expression of VNTAT1, the voltage value of VPTAT also increases with the rise of the temperature, and the chip normally operates; when the temperature continues to reach the over-temperature point TH, VPTAT VNTAT VT 1; if the temperature continues to rise, the output voltage of the comparison operational amplifier AMP jumps to a low level, and the voltage VNTAT of the in-phase end of the comparison operational amplifier AMP follows the expression of VNTAT2 due to the conduction of the NMOS transistor NM2 and the cut-off of the NMOS transistor NM3, and simultaneously, the over-temperature of the system is indicated, so that the chip performs corresponding protection action; only when the temperature drops to TL, the condition of VPTAT VNTAT VT2 can be satisfied, and only when the temperature drops to a level lower than TL, the output of the comparison operational amplifier AMP returns to the high level again, and the chip can operate normally again.
The over-temperature protection circuit for the low-power-consumption chip does not use a resistor, and the problem that the area of a resistor layout in the low-power-consumption chip is large is solved. Moreover, common MOS tubes and triodes are adopted, no special requirement is made on the temperature characteristic of the used bias current, no band-gap reference voltage is needed to be used as the input of the comparator, no special requirement is made on the used process, few devices are used, few circuit branches are needed, and the structure is simple. All the used currents in the circuit are nanoampere, the overall consumption of the circuit is very low, and the purpose of low power consumption is achieved. The temperature characteristics of the MOS tube VGS and the triode VBE working at the subthreshold value and the NMOS tube working at the subthreshold region are utilized to generate a voltage which is positively correlated with the temperature, and the low-power-consumption over-temperature protection and the hysteresis function are realized by combining the on-off of the switching tube.
Drawings
Fig. 1 is a circuit for over-temperature protection of a chip according to the prior art.
Fig. 2 is an over-temperature protection circuit for a low power consumption chip according to the present application.
Fig. 3 is a schematic diagram of an operating process of the over-temperature protection circuit for a low power consumption chip according to the present application.
Detailed Description
The following examples are described to aid in the understanding of the present invention. The examples are not intended to, and should not be construed in any way as, limiting the scope of the invention.
In the following description, those skilled in the art will recognize that components may be described throughout this discussion as separate functional units (which may include sub-units), but those skilled in the art will recognize that various components or portions thereof may be divided into separate components or may be integrated together (including being integrated within a single system or component).
Furthermore, connections between components or systems within the figures are not intended to be limited to direct connections. Rather, data between these components may be modified, reformatted, or otherwise changed by the intermediate components. Additionally, additional or fewer connections may be used. It should also be noted that the terms "coupled," "connected," or "input" should be understood to include direct connections, indirect connections through one or more intermediate devices, and wireless connections.
Example 1:
the over-temperature protection circuit for low power consumption chip, as shown in fig. 2-3, includes: the first current mirror, the second current mirror, the third current mirror, the NMOS NM1, the NMOS NM2, the transistor Q1, the NMOS NM3, the operational amplifier AMP, the NMOS NM4, the NMOS NM5, the NMOS NM6, the NMOS NM7, the inverter INV1, and the inverter INV2, the NMOS NM1 is connected in series with the NMOS NM2, the transistor Q1 is connected in series with the NMOS NM3, the NMOS NM1 and the NMOS NM2 are connected in parallel with the transistor Q1 and the NMOS NM3 and then connected in series with the first current mirror, the NMOS NM4 is connected in series with the NMOS NM5 and then connected in series with the second current mirror, the NMOS NM6 is connected in series with the NMOS NM7 and then connected in series with the third current mirror, the source of the NMOS NM7 is connected with the source of the NMOS NM4, the common phase terminal (VNTAT AMP) of the operational amplifier AMP and the drain NM1 are connected with the negative voltage of the common phase of the operational amplifier TAT 24, the common phase voltage of the operational amplifier TAT 6, the operational amplifier is the positive phase temperature of the common phase-related to the positive phase-temperature, the output end of the operational amplifier AMP is connected with an inverter INV1, an inverter INV1 is connected with an inverter INV2 in series, an output signal VC _ N of the inverter INV1 is transmitted to the grid electrode of an NMOS tube NM2, an output signal VC _ P of the inverter INV2 is transmitted to the grid electrode of an NMOS tube NM3, and the output end of the operational amplifier AMP is enabled to output high level or low level through comparing the voltage of the non-inverting end and the voltage of the inverting end of the operational amplifier AMP, so that the on-off state of the NMOS tube NM2 and the NMOS tube NM3 is changed, and the normal work of a chip or the protection of the.
The NMOS transistor NM2 and the NMOS transistor NM3 are NMOS transistors used as switching transistors, a control signal of the NMOS transistor NM2 is VC _ N, a control signal of the NMOS transistor NM3 is VC _ P, the NMOS transistor NM1 is connected to form a diode structure, and the transistor Q1 is connected to form a diode structure. The gate of the NMOS transistor NM1 is connected to the drain. The ratio of the width-to-length ratio of the NMOS NM4 to the NMOS NM5 is 1: k1, the ratio of the width-length ratio of the NMOS transistor NM6 to the NMOS transistor NM7 is 1: K2. the gate of the NMOS transistor NM4 is connected to the drain, and the gate of the NMOS transistor NM6 is connected to the drain.
The output signal VC _ N of the inverter INV1 and the output signal VC _ P of the inverter INV2 respectively change the on/off states of the NMOS transistor NM2 and NM3 to generate hysteresis, and are simultaneously input to the digital circuit at the rear end to provide over-temperature protection. When the temperature does not exceed the over-temperature point, the voltage of the inverting end of the comparison operational amplifier AMP is larger than the voltage of the inverting end, VNTAT is larger than VPTAT, the output of the comparison operational amplifier AMP is high level, the output signal VC _ N of the inverter INV1 is low level, the output signal VC _ P of the inverter INV2 is high level, the NMOS tube NM2 is cut off, the circuit where the NMOS tube NM1 is located is disconnected, the NMOS tube NM3 is connected, the triode Q1 is connected into the circuit, and the chip works normally. When the temperature rises to exceed an over-temperature point, the voltage of the in-phase end of the comparison operational amplifier AMP is smaller than the voltage of the out-phase end, VNTAT is smaller than VPTAT, the output of the comparison operational amplifier AMP jumps from high level to low level, the output signal VC _ N of the inverter INV1 jumps to high level, the output signal VC _ P of the inverter INV2 jumps to low level, the NMOS tube NM2 is conducted, the NMOS tube NM1 is connected into a circuit, the NMOS tube NM3 is cut off, the branch where the triode Q1 is located is broken, the over-temperature of the system is indicated, the protection action is triggered, and the chip is protected and closed. When the temperature is reduced to be lower than the over-temperature point, the signal VC _ N is at a low level, the signal VC _ P is at a high level, and the chip works normally again.
The voltage between the source of the NMOS transistor NM7 and the source of the NMOS transistor NM4 is V1, the value of V1 is VGS5-VGS4, VGS5 is the voltage of the gate and the source of the NMOS transistor NM5, VGS4 is the voltage of the gate and the source of the NMOS transistor NM5, and the specific expression of V1 is S1:
Figure BDA0002996531930000071
wherein n is a sub-threshold slope correction factor, VTFor the thermal voltage, K1 is a value of the NMOS transistor NM4 compared with the width and length of the NMOS transistor NM5, I5 is a current flowing through the NMOS transistor NM5, and I4 is a current flowing through the NMOS transistor NM 4. An expression S2 for the voltage VNTAT at the non-inverting terminal of the comparison operational amplifier AMP and a calculation expression for the voltage VPTAT at the inverting terminal of the comparison operational amplifier AMP can be found.
The expression of the voltage VPTAT at the inverting terminal of the comparison operational amplifier AMP is S2:
VPTAT＝nVTln(M*K1*K2) (S2)
wherein n is a sub-threshold slope correction factor, VTFor the thermal voltage, M is a value of the third current mirror compared with the width and length of the second current mirror, K1 is a value of the NMOS transistor NM4 compared with the width and length of the NMOS transistor NM5, and K2 is a value of the NMOS transistor NM6 compared with the width and length of the NMOS transistor NM 7.
When the temperature does not exceed the over-temperature point, comparing the voltage V of the non-inverting terminal of the operational amplifier AMPNTAT1VBE is the voltage between the emitter and base of transistor Q1. When the temperature rises aboveComparing the voltage V of the non-inverting terminal of the operational amplifier AMP at the over-temperature pointNTAT2Is S3:
Figure BDA0002996531930000072
wherein, VGS1Is the voltage between the gate and the source of the NMOS transistor NM1, Vth1Is the threshold voltage of NMOS transistor NM1, n is the sub-threshold slope correction factor, VTIs a thermal voltage, IDTherefore, the current flowing through the NMOS transistor NM1, W is the width of the conduction channel of the NMOS transistor NM1, L is the length of the conduction channel of the NMOS transistor NM1, μnFor electron mobility, COXIs the gate oxide capacitance per unit area of the NMOS transistor NM 1. As can be seen from expression S3, controlling the value of ID can control the magnitude of the hysteresis amount, with the larger the ID, the larger the hysteresis amount, and the smaller the ID, the smaller the hysteresis amount. Only when the temperature drops to be lower than the over-temperature point, VC returns to the low level, so that the chip works normally again.
When the temperature continuously rises and does not exceed the over-temperature point TH, the voltage VNTAT of the non-inverting end of the comparison operational amplifier AMP follows the expression of VNTAT1 due to the cut-off of the NMOS transistor NM2 and the turn-on of the NMOS transistor NM3, the voltage value of VPTAT is increased along with the rise of the temperature, and the chip normally works; when the temperature continues to reach the over-temperature point TH, VPTAT VNTAT VT 1; if the temperature continues to rise, the output voltage of the comparison operational amplifier AMP jumps to a low level, and the voltage VNTAT of the in-phase end of the comparison operational amplifier AMP follows the expression of VNTAT2 due to the conduction of the NMOS transistor NM2 and the cut-off of the NMOS transistor NM3, and simultaneously, the over-temperature of the system is indicated, so that the chip performs corresponding protection action; only when the temperature drops to TL, the condition of VPTAT VNTAT VT2 can be satisfied, and only when the temperature drops to a level lower than TL, the output of the comparison operational amplifier AMP returns to the high level again, and the chip can operate normally again.
All the MOS tubes are enhancement type MOS tubes. The NMOS transistor NM1, the NMOS transistor NM4, the NMOS transistor NM5, the NMOS transistor NM6 and the NMOS transistor NM7 work in a subthreshold region. The PMOS tube PM1 and the PMOS tube PM2 form a first current mirror of a cascode structure, the PMOS tube PM3 and the PMOS tube PM4 form a second current mirror of the cascode structure, the PMOS tube PM5 and the PMOS tube PM6 form a third current mirror of the cascode structure, the third current mirror is used for improving the replication precision of the current mirrors, and the grids of the first current mirror, the second current mirror and the third current mirror are respectively connected to voltage biases of VB1 and VB2 to provide current biases for each branch. The gates of the PMOS transistor PM1, the PMOS transistor PM3 and the PMOS transistor PM5 are connected to the voltage bias of VB1, and the gates of the PMOS transistor PM2, the PMOS transistor PM4 and the PMOS transistor PM6 are connected to the voltage bias of VB 2. The ratio of the width-to-length ratio (current ratio) of the second current mirror to the third current mirror is 1: m, M > 0.
The over-temperature protection circuit for the low-power-consumption chip does not use a resistor, and the problem that the area of a resistor layout in the low-power-consumption chip is large is solved. Moreover, common MOS tubes and triodes are adopted, no special requirement is made on the temperature characteristic of the used bias current, no band-gap reference voltage is needed to be used as the input of the comparator, no special requirement is made on the used process, few devices are used, few circuit branches are needed, and the structure is simple. All the used currents in the circuit are nanoampere, the overall consumption of the circuit is very low, and the purpose of low power consumption is achieved. The temperature characteristics of a VGS (voltage gradient switching) tube and a VBE (voltage source element) tube working at a subthreshold value and an NMOS (N-channel metal oxide semiconductor) tube working at a subthreshold region are utilized to generate a PTAT (proportional to integral) voltage, and the low-power-consumption over-temperature protection and hysteresis functions are realized by combining the on-off of a switching tube.
While various aspects and embodiments have been disclosed herein, it will be apparent to those skilled in the art that other aspects and embodiments can be made without departing from the spirit of the disclosure, and that several modifications and improvements can be made without departing from the spirit of the disclosure. The various aspects and embodiments disclosed herein are presented by way of example only and are not intended to limit the present disclosure, which is to be controlled in the spirit and scope of the appended claims.

Claims (10)

1.用于低功耗芯片的过温保护电路，其特征在于，包括：第一电流镜、第二电流镜、第三电流镜、NMOS管NM1、NMOS管NM2、三极管Q1、NMOS管NM3、运算放大器AMP、NMOS管NM4、NMOS管NM5、NMOS管NM6、NMOS管NM7、反相器INV1和反相器INV2，所述NMOS管NM1与NMOS管NM2串联，三极管Q1与NMOS管NM3串联，NMOS管NM1和NMOS管NM2与三极管Q1和NMOS管NM3并联再与第一电流镜串联，NMOS管NM4与NMOS管NM5串联再与第二电流镜串联，NMOS管NM6与NMOS管NM7串联再与第三电流镜串联，NMOS管NM7的源极与NMOS管NM4的源极连接，运算放大器AMP的同相端与NMOS管NM1的漏极连接，运算放大器AMP的反相端与NMOS管NM6的源极连接，运算放大器AMP的同相端的电压为温度负相关的电压，运算放大器AMP的反相端的电压为温度正相关的电压，，运算放大器AMP的输出端与反相器INV1连接，反相器INV1与反相器INV2串联，反相器INV1的输出信号VC_N到NMOS管NM2的栅极，反相器INV2的输出信号VC_P到NMOS管NM3的栅极，通过运算放大器AMP的同相端与反相端的电压大小进行比较，致使运算放大器AMP的输出端输出高电平或者低电平，从而改变NMOS管NM2与NMOS管NM3的通断状态，控制芯片正常工作或者芯片受保护被关闭。1. An over-temperature protection circuit for a low-power chip, characterized in that it includes: a first current mirror, a second current mirror, a third current mirror, an NMOS transistor NM1, an NMOS transistor NM2, a transistor Q1, an NMOS transistor NM3, Operational amplifier AMP, NMOS transistor NM4, NMOS transistor NM5, NMOS transistor NM6, NMOS transistor NM7, inverter INV1 and inverter INV2, the NMOS transistor NM1 is connected in series with the NMOS transistor NM2, the transistor Q1 is connected in series with the NMOS transistor NM3, and the NMOS transistor The transistors NM1 and NMOS transistors NM2 are connected in parallel with the transistor Q1 and the NMOS transistor NM3 and then connected in series with the first current mirror. The NMOS transistor NM4 is connected in series with the NMOS transistor NM5 and then connected in series with the second current mirror. The current mirrors are connected in series, the source of the NMOS transistor NM7 is connected to the source of the NMOS transistor NM4, the non-inverting terminal of the operational amplifier AMP is connected to the drain of the NMOS transistor NM1, the inverting terminal of the operational amplifier AMP is connected to the source of the NMOS transistor NM6, The voltage at the non-inverting terminal of the operational amplifier AMP is a voltage negatively correlated with temperature, and the voltage at the inverting terminal of the operational amplifier AMP is a voltage positively correlated with temperature. The output terminal of the operational amplifier AMP is connected to the inverter INV1, and the inverter INV1 is connected to the inverting phase. The inverter INV2 is connected in series, the output signal VC_N of the inverter INV1 is sent to the gate of the NMOS transistor NM2, and the output signal VC_P of the inverter INV2 is connected to the gate of the NMOS transistor NM3. The comparison causes the output terminal of the operational amplifier AMP to output a high level or a low level, thereby changing the on-off state of the NMOS transistor NM2 and the NMOS transistor NM3, and the control chip works normally or the chip is protected and turned off. 2.如权利要求1所述的用于低功耗芯片的过温保护电路，其特征在于，包括选自下组的一个或多个特征：2. The over-temperature protection circuit for a low-power chip as claimed in claim 1, comprising one or more features selected from the group consisting of: (a)所有MOS管均为增强型MOS管；(a) All MOS tubes are enhanced MOS tubes; (b)NMOS管NM1、NMOS管NM4、NMOS管NM5、NMOS管NM6和NMOS管NM7工作在亚阈值区；(b) NMOS transistor NM1, NMOS transistor NM4, NMOS transistor NM5, NMOS transistor NM6 and NMOS transistor NM7 work in the sub-threshold region; (c)PMOS管PM1与PMOS管PM2组成共源共栅结构的第一电流镜，PMOS管PM3与PMOS管PM4组成共源共栅结构的第二电流镜，PMOS管PM5与PMOS管PM6组成共源共栅结构的第三电流镜，用于提高电流镜的复制精度，第一电流镜、第二电流镜和第三电流镜的栅极都分别接在了VB1、VB2的电压偏置上，为各支路提供电流偏置；(c) PMOS tube PM1 and PMOS tube PM2 form the first current mirror of the cascode structure, PMOS tube PM3 and PMOS tube PM4 form the second current mirror of the cascode structure, PMOS tube PM5 and PMOS tube PM6 form a common current mirror The third current mirror of the source cascode structure is used to improve the replication accuracy of the current mirror. The gates of the first current mirror, the second current mirror and the third current mirror are connected to the voltage biases of VB1 and VB2 respectively. Provide current bias for each branch; (d)第二电流镜与第三电流镜的宽长比的比值为1：M，M＞0；(d) The ratio of the width to length ratio of the second current mirror to the third current mirror is 1:M, M>0; (e)NMOS管NM2和NMOS管NM3是作为开关管使用的NMOS管，NMOS管NM2的控制信号为VC_N，NMOS管NM3的控制信号为VC_P，NMOS管NM1接成二极管结构，三极管Q1接成二极管结构，NMOS管NM1的栅极与漏极相连；(e) NMOS transistor NM2 and NMOS transistor NM3 are NMOS transistors used as switching transistors, the control signal of NMOS transistor NM2 is VC_N, the control signal of NMOS transistor NM3 is VC_P, NMOS transistor NM1 is connected to a diode structure, and transistor Q1 is connected to a diode Structure, the gate of the NMOS transistor NM1 is connected to the drain; (f)NMOS管NM4与NMOS管NM5的宽长比的比值为1：K1，NMOS管NM6与NMOS管NM7的宽长比的比值为1：K2，NMOS管NM4的栅极与漏极相连，NMOS管NM6的栅极与漏极相连。(f) The ratio of the aspect ratio of the NMOS transistor NM4 to the NMOS transistor NM5 is 1:K1, the ratio of the aspect ratio of the NMOS transistor NM6 to the NMOS transistor NM7 is 1:K2, the gate of the NMOS transistor NM4 is connected to the drain, The gate of the NMOS transistor NM6 is connected to the drain. 3.如权利要求1所述的用于低功耗芯片的过温保护电路，其特征在于，反相器INV1的输出信号VC_N与反相器INV2的输出信号VC_P，分别改变NMOS管NM2与NMOS管NM3的通断情况产生迟滞，同时输入到后端的数字电路中提供过温保护动作。3. The over-temperature protection circuit for a low power consumption chip as claimed in claim 1, wherein the output signal VC_N of the inverter INV1 and the output signal VC_P of the inverter INV2 change the NMOS transistors NM2 and NMOS respectively. The on-off condition of the tube NM3 produces hysteresis, and at the same time, it is input to the digital circuit at the back end to provide over-temperature protection. 4.如权利要求3所述的用于低功耗芯片的过温保护电路，其特征在于，当温度未超过过温点时，比较运算放大器AMP同相端的电压大于反相端的电压，VNTAT>VPTAT,比较运算放大器AMP的输出为高电平，反相器INV1的输出信号VC_N为低电平，反相器INV2的输出信号VC_P为高电平，NMOS管NM2截止、NMOS管NM1所在之路断开，NMOS管NM3导通、三极管Q1接入电路，芯片正常工作。4. The over-temperature protection circuit for a low-power chip according to claim 3, wherein when the temperature does not exceed the over-temperature point, the voltage of the non-inverting terminal of the comparison operational amplifier AMP is greater than the voltage of the inverting terminal, VNTAT>VPTAT , the output of the comparison operational amplifier AMP is high level, the output signal VC_N of the inverter INV1 is low level, the output signal VC_P of the inverter INV2 is high level, the NMOS transistor NM2 is turned off, and the path where the NMOS transistor NM1 is located is interrupted. On, the NMOS transistor NM3 is turned on, the transistor Q1 is connected to the circuit, and the chip works normally. 5.如权利要求3所述的用于低功耗芯片的过温保护电路，其特征在于，当温度上升超过过温点时，比较运算放大器AMP同相端的电压小于反相端的电压，VNTAT＜VPTAT,比较运算放大器AMP的输出从高电平跳变为低电平，反相器INV1的输出信号VC_N跳变为高电平，反相器INV2的输出信号VC_P跳变为低电平，NMOS管NM2导通、NMOS管NM1接入电路，NMOS管NM3截止、三极管Q1所在支路断路，以此来指示系统过温，并触发保护动作，芯片受保护被关闭；当温度下降到低于过温点时，信号VC_N为低电平,信号VC_P为高电平,芯片重新正常工作。5. The over-temperature protection circuit for a low-power chip according to claim 3, wherein when the temperature rises beyond the over-temperature point, the voltage at the non-inverting terminal of the comparison operational amplifier AMP is smaller than the voltage at the inverting terminal, VNTAT<VPTAT , the output of the comparison operational amplifier AMP jumps from a high level to a low level, the output signal VC_N of the inverter INV1 jumps to a high level, the output signal VC_P of the inverter INV2 jumps to a low level, and the NMOS transistor NM2 is turned on, NMOS tube NM1 is connected to the circuit, NMOS tube NM3 is turned off, and the branch where the transistor Q1 is located is disconnected, so as to indicate that the system is overheated, and trigger the protection action, the chip is protected and turned off; when the temperature drops below the overtemperature At the point, the signal VC_N is low level, the signal VC_P is high level, and the chip works normally again. 6.如权利要求1所述的用于低功耗芯片的过温保护电路，其特征在于，所述NMOS管NM7的源极与NMOS管NM4的源极的电压为V1，V1的值为VGS5-VGS4,VGS5为NMOS管NM5的栅极与源极之间的电压，VGS4为NMOS管NM4的栅极与源极之间的电压，V1的具体表达式为S1：6. The over-temperature protection circuit for a low power consumption chip according to claim 1, wherein the voltage of the source of the NMOS transistor NM7 and the source of the NMOS transistor NM4 is V1, and the value of V1 is VGS5 -VGS4, VGS5 are the voltages between the gate and the source of the NMOS transistor NM5, VGS4 is the voltage between the gate and the source of the NMOS transistor NM4, and the specific expression of V1 is S1:
Figure FDA0002996531920000021
Figure FDA0002996531920000021
 其中，n为亚阈值斜率修正因子，VT为热电压，K1为NMOS管NM4与NMOS管NM5的宽长相比的值，I5为流过NMOS管NM5的电流，I4为流过NMOS管NM4的电流。Among them, n is the sub-threshold slope correction factor, V T is the thermal voltage, K1 is the value of the width and length of the NMOS transistor NM4 compared with the NMOS transistor NM5, I5 is the current flowing through the NMOS transistor NM5, and I4 is the current flowing through the NMOS transistor NM4. current. 7.如权利要求1所述的用于低功耗芯片的过温保护电路，其特征在于，比较运算放大器AMP反相端的电压VPTAT的表达式为S2：7. The over-temperature protection circuit for a low-power consumption chip as claimed in claim 1, wherein the expression for comparing the voltage VPTAT of the inverting terminal of the operational amplifier AMP is S2: VPTAT＝nVTln(M*K1*K2) (S2)VPTAT=nV T ln(M*K1*K2) (S2) 其中，n为亚阈值斜率修正因子，VT为热电压，M为第三电流镜与第二电流镜的宽长相比的值，K1为NMOS管NM4与NMOS管NM5的宽长相比的值，K2为NMOS管NM6与NMOS管NM7的宽长相比的值。Among them, n is the sub-threshold slope correction factor, V T is the thermal voltage, M is the value of the width and length of the third current mirror compared with that of the second current mirror, K1 is the value of the width and length of the NMOS transistor NM4 and the NMOS transistor NM5 compared, K2 is the value of the width and length of the NMOS transistor NM6 compared to the NMOS transistor NM7. 8.如权利要求1所述的用于低功耗芯片的过温保护电路，其特征在于，当温度未超过过温点时，比较运算放大器AMP同相端的电压VNTAT1＝VBE，VBE为三极管Q1的发射极与基极之间的电压。8. The over-temperature protection circuit for a low-power chip as claimed in claim 1, wherein when the temperature does not exceed the over-temperature point, the voltage at the non-inverting terminal of the comparison operational amplifier AMP is V NTAT1 =VBE, and VBE is the transistor Q1 voltage between the emitter and base. 9.如权利要求1所述的用于低功耗芯片的过温保护电路，其特征在于，当温度上升超过过温点时，比较运算放大器AMP同相端的电压VNTAT2的表达式为S3：9. The over-temperature protection circuit for a low-power consumption chip as claimed in claim 1, wherein when the temperature rises beyond the over-temperature point, the expression for comparing the voltage V NTAT2 of the non-inverting terminal of the operational amplifier AMP is S3:
Figure FDA0002996531920000031
Figure FDA0002996531920000031
 其中，VGS1为NMOS管NM1的栅极与源极之间的电压，Vth1为NMOS管NM1的阈值电压，n为亚阈值斜率修正因子，VT为热电压，ID为此时流过NMOS管NM1的电流，W为NMOS管NM1的导电沟道宽度，L为NMOS管NM1的导电沟道长度，μn为电子迁移率，COX为NMOS管NM1的单位面积栅氧电容。Among them, V GS1 is the voltage between the gate and source of the NMOS transistor NM1, V th1 is the threshold voltage of the NMOS transistor NM1, n is the sub-threshold slope correction factor, V T is the thermal voltage, ID is the current flowing through The current of the NMOS transistor NM1, W is the conduction channel width of the NMOS transistor NM1, L is the conduction channel length of the NMOS transistor NM1, μn is the electron mobility, and C OX is the gate oxygen capacitance per unit area of the NMOS transistor NM1. 10.如权利要求9所述的用于低功耗芯片的过温保护电路，其特征在于，控制ID的值，可以控制迟滞量的大小，ID越大，迟滞量越大，ID越小，迟滞量越小；只有当温度下降到比过温点更低时，VC才回到低电平，使芯片重新正常工作。10. The over-temperature protection circuit for a low-power chip according to claim 9, wherein the value of ID can be controlled to control the size of the hysteresis, the larger the ID, the larger the hysteresis, and the smaller the ID, The smaller the amount of hysteresis; only when the temperature drops lower than the over-temperature point, does VC return to a low level, allowing the chip to work normally again.
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