CN111933629B - Integrated LED device and manufacturing method thereof - Google Patents
Integrated LED device and manufacturing method thereof Download PDFInfo
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- CN111933629B CN111933629B CN202011020279.1A CN202011020279A CN111933629B CN 111933629 B CN111933629 B CN 111933629B CN 202011020279 A CN202011020279 A CN 202011020279A CN 111933629 B CN111933629 B CN 111933629B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses an integrated LED device, which comprises an LED module, a power supply and a liquid guide pipe, wherein the LED module comprises a ceramic base, a metal frame and an inverted LED chip array; a plurality of rows of grooves are formed in the ceramic base, the metal frame is arranged on the ceramic base and comprises a plurality of rows of metal strips crossing over the grooves, gaps exist between every two adjacent metal strips, flip LED chips in the flip LED chip array are arranged above the gaps, and cathodes and anodes of the flip LED chips are respectively arranged on the two adjacent metal strips; the liquid guide pipe and the groove are in electric communication with the power supply through filling electrolyte. The LED device aims to solve the technical problems of low conductivity reliability and low heat dissipation efficiency of the existing LED device.
Description
Technical Field
The invention belongs to the field of semiconductor devices, and particularly relates to an integrated LED device and a manufacturing method thereof.
Background
The UVC LED has low photoelectric conversion efficiency, most energy is converted into heat to be emitted, the UVC LED has higher junction temperature requirement and fast thermal attenuation, and a copper-clad aluminum nitride ceramic bracket is mainly adopted in the industry at present because the aluminum nitride material and the copper material have higher thermal conductivity, so that the thermal conductivity of a device can be increased and the thermal resistance can be reduced. With the development of the UVC industry and the higher requirements of sterilization application products, the application of UVC LED devices with higher power, light extraction efficiency and reliability will be the future trend.
At present, the heat dissipation of the UVC LED depends on vertical heat sink, heat is transferred to a copper bonding pad, aluminum nitride, an SET (surface mount) tin paste layer and a substrate from a UVC LED chip, and finally a heat dissipation unit needs to pass through 5 interfaces, so that in a high-power UVC LED device, the heat dissipation mode can not meet the requirement more and more, once the junction temperature of the UVC LED is higher than 60 ℃, irreversible extra light attenuation caused by heat can begin to occur, and once the junction temperature of the UVC LED is higher than 80 ℃, the light attenuation can be rapidly carried out and the failure occurs. Therefore, a more direct and efficient heat dissipation system is urgently needed in a high-power UVC LED device.
At present UVC LED device is mostly copper-clad aluminium nitride support, the structure of inside inherent UVC LED chip, in order to promote power, will increase device size and chip quantity, if increase the device of 3535 size on the market to 6868 size, inside increases to 4 from single UVC LED chip, will produce following two problems: (1) increasing the device size requires increasing the input current, and the existing DPC or HTCC process aluminum nitride supports adopt the via hole (through hole, micropore) process for electrical connection, and the thermal expansion coefficient of copper is 16.5 multiplied by 10-6The coefficient of thermal expansion of aluminum nitride is 4.5X 10 DEG C-6In the peak reflow process or the eutectic soldering process in the device packaging process, abnormalities such as via hole protrusion and the like can occur due to high temperature, and failure is easy to occur along with the increase of the use current. The via hole process is complex, the processing cost is high, the size cannot be increased, and the via hole cannot be designed near a chip, so that a more reliable aluminum nitride substrate electric connection technology with better conductivity is urgently needed in a high-power UVC LED device; (2) the size of a device is increased, the mode of one support with one chip is changed into the mode of one support with a plurality of chips, more light emitting designs and light reflecting designs are needed, light emitted by one UVC LED chip is prevented from entering other UVC LED chips and the mutual influence between each UVC LED chip is avoided, the existing copper-clad aluminum nitride support reflects UVC light mainly by a gold-plated surface, gold is plated on the surface of a copper material, copper grows through electroplating, but a light reflecting inclined plane with a certain shape grows through electroplating, the cost is high, and therefore a low-cost support manufacturing method for improving the light emitting efficiency of each chip is urgently needed.
Disclosure of Invention
Aiming at the defects or the improvement requirements of the prior art, the invention provides an integrated LED device and a manufacturing method thereof, and aims to solve the technical problems of low conductivity reliability and low heat dissipation efficiency of the conventional LED device.
In order to achieve the above object, according to one aspect of the present invention, there is provided an integrated LED device, comprising an LED module, a power supply and a liquid guide tube, wherein the LED module comprises a ceramic base, a metal frame, and an inverted LED chip array; a plurality of rows of grooves are formed in the ceramic base, the metal frame is arranged on the ceramic base and comprises a plurality of rows of metal strips crossing over the grooves, gaps exist between every two adjacent metal strips, a plurality of flip LED chips are arranged above the gaps, and cathodes and anodes of the flip LED chips are respectively arranged on the two adjacent metal strips to form a flip LED chip array; the liquid guide pipe and the groove are in electric communication with the power supply through filling electrolyte.
Preferably, the number of the LED modules is plural, and the grooves of the adjacent LED modules are communicated with each other.
Preferably, the metal strip includes a bottom plate and a plurality of protruding strips disposed above the bottom plate.
Preferably, a plurality of the convex strips are arranged in the longitudinal direction of the metal strip, and one convex strip is arranged in the width direction of the metal strip.
Preferably, the cross-sectional area of the protruding strip in the direction away from the bottom plate is gradually narrowed.
Preferably, the metal frame is made of any one or more of silver, copper, gold, aluminum, chromium, magnesium, calcium, sodium, tungsten, zinc, potassium, nickel, iron, tin, lead and mercury, and the electrolyte is any one or more of copper sulfate, sodium chloride and potassium chloride.
Preferably, the cooling device also comprises a metal block structure cold row, a flow passage communicated with the liquid guide pipe is arranged in the cold row, a semiconductor refrigerator is arranged at the top of the cold row, and/or a finned radiator is arranged at the lower part of the cold row.
Preferably, an adhesive layer is further included between the ceramic base and the metal frame, and the material of the adhesive layer includes any one or more of copper, nickel, gold, and gold-tin alloy.
According to another aspect of the present invention, there is provided a method for manufacturing an integrated LED device, the method comprising:
manufacturing a ceramic base: sintering aluminum nitride powder into a ceramic base, wherein a plurality of rows of grooves are formed in the ceramic base;
manufacturing a metal frame: preparing a plurality of rows of metal strips from metal sheets, wherein the metal strips are arranged in parallel at intervals to form a metal frame;
manufacturing an LED module: fixing the metal frame on the ceramic base, fixing the inverted LED chip on the metal frame to form an inverted LED chip array, and carrying out air-tight packaging;
and (3) completing electrical connection: and communicating the groove with the liquid guide pipe, filling the groove with electrolyte, and connecting a power supply to realize electric connection.
In general, compared with the prior art, the above technical solution contemplated by the present invention can achieve the following beneficial effects:
(1) the invention provides an integrated LED device, which comprises an LED module, a power supply and a liquid guide pipe. The structure of the invention can save the steps of punching through holes on the ceramic base and filling the through holes with copper in the traditional electric connection, thereby having lower cost.
(2) Because the metal strip in the integrated LED device provided by the invention comprises the plurality of convex strips, the plurality of convex strips are arranged in the length direction of the metal strip, one convex strip is arranged in the width direction of the metal strip, and the cathode and the anode of each flip LED chip are respectively arranged on two adjacent rows of metal strips, namely, the periphery of each flip LED chip is provided with the inclined plates for reflecting light, the metal frame with the structure can prevent light crosstalk, improve the uniformity of the light, improve the light utilization rate of each flip LED chip and further improve the light emitting efficiency of the orderly device.
(3) Because the heat-conducting medium of the LED device is the metal strip and the electrolyte, the heat is radiated by the traditional bonding pad, the copper-filled through hole, the device electrode and the electric-heat separation device, the number of longitudinal heat-radiating interfaces is greatly reduced, and the heat-radiating efficiency is higher. Because the integrated LED device provided by the invention also comprises the cold drain, the temperature of the electrolyte flowing into the device after the electrolyte passes through the cold drain is low, the traditional vertical heat sink can be replaced by the liquid cooling of the electrolyte, the heat dissipation efficiency is further increased, and the working temperature of the LED device is rapidly reduced to be lower than the room temperature.
(4) The invention provides a manufacturing method of an integrated LED device, which omits a copper electroplating dam enclosing process with high cost and difficult manufacturing of an inclination angle, and is simpler in manufacturing method. Meanwhile, the invention omits the SMT (surface mount technology) process, avoids one-time thermal shock, and reduces the probability of failure caused by secondary heating of the product (after the UVC flip LED chip is subjected to die bonding in the traditional mode, the product can be subjected to one-time thermal shock in the lens packaging process, and can be subjected to one-time thermal shock in the SMT chip mounting process).
Drawings
FIG. 1 is a top view of an LED module;
FIG. 2 is a cross-sectional view of an LED module;
FIG. 3 is a schematic structural diagram of an integrated LED device according to an embodiment;
fig. 4 is a schematic structural view of an integrated LED device of another embodiment;
FIG. 5 is a schematic view of the structure of a single metal strip in a metal frame;
FIG. 6 is a schematic structural view of a cold row;
FIG. 7 is a schematic structural diagram corresponding to each step of the manufacturing method in the manufacturing of the integrated LED device;
the same reference numbers will be used throughout the drawings to refer to the same or like elements or structures, wherein:
1-an LED module; 2-a ceramic base; 3-a metal frame; 4-flip-chip LED chips; 5-a lens; 6-a groove; 7-cold discharging; 8-a peristaltic pump; 9-a power supply; 10-a catheter; 11-a sealing ring; 12-locking clips; 13-a semiconductor refrigerator; 14-a heat sink; 15-convex strips; 16-cold discharge flow channel.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
As shown in fig. 1, 2 and 3, the present invention provides an integrated LED device, which includes an LED module 1, a power supply 9 and a plurality of liquid guide tubes 10, wherein the LED module 1 includes a ceramic base 2, a metal frame 3 and an inverted LED chip array, and the ceramic base 2 is preferably made of aluminum nitride because of its high thermal conductivity; a plurality of rows of grooves 6 for electrolyte circulation are formed in the ceramic base 2, the metal frame 3 is arranged on the ceramic base 2, the metal frame 3 comprises a plurality of rows of metal strips crossing over the grooves 6, gaps exist between adjacent metal strips, flip LED chips 4 in the flip LED chip array are arranged above the gaps, and the gaps are used for preventing the chips from short circuit when conducting electricity; and the cathode and the anode of the flip LED chip 4 are respectively disposed on two adjacent rows of metal strips. The catheter 10 and the channel 6 are in electrical communication with the power source 9 by filling with electrolyte. If the LED module has N rows of inverted LED chips, N +1 grooves 6 are arranged on the ceramic base 2.
The invention realizes the electric connection of the flip LED chip through the electrolyte, has large contact area and high reliability, is not easy to lose efficacy, and avoids the process of punching a copper hole on a ceramic base and filling the hole with high cost and poor reliability in the traditional electric connection. Meanwhile, the heat conduction interface of the LED device with the structure is only 1, so that the heat dissipation efficiency is high.
As another embodiment, the number of the LED modules 1 is multiple, the grooves 6 of the adjacent LED modules 1 are communicated, taking two LED modules in fig. 4 as an example, the two LED modules are connected through the locking clamp 12, and the electrolyte between the adjacent LED modules 1 is placed through the sealing ring 11 to leak.
The working process is as follows:
a power supply 9 and a peristaltic pump 8 for powering the electrolyte flow are connected in the line of the catheter 10.
And (3) injecting electrolyte, namely communicating all the liquid guide pipes 10 with the grooves 6 one by one, starting the peristaltic pump 8, sucking the electrolyte to fill the flow path by utilizing suction force, sealing by a sealing ring 11, and closing the locking clamp 12. The power supply 9 is connected with the electrolyte through the gold-plated electrode, the power supply 9 is started to realize electric conduction, the peristaltic pump 8 is switched on, the electrolyte circularly flows in the pipeline, and a set potential difference exists between the electrolyte pipelines connected with the LED device. The access mode of the power supply 9 is specifically as follows: the double number of liquid guide pipes are arranged in a row, from the row head, positive electrode rods are inserted into the odd number of liquid guide pipes, negative electrode rods are inserted into the even number of liquid guide pipes, the positive electrode rods are connected with the positive electrode of the power supply 9, and the negative electrode rods are connected with the negative electrode of the power supply 9. A power supply 9 applies a certain voltage between the two electrodes to realize circuit conduction. The cold row 7 can also be connected into the LED device, and the temperature of the electrolyte flowing into the LED device is 12-15 ℃ after the electrolyte passes through the cold row 7. When the LED device works, a large amount of heat is emitted and absorbed by the electrolyte, the electrolyte is heated to promote the movement of ions and reduce the resistivity of the electrolyte, so that the conductivity is enhanced, and the output optical power of the flip LED chip is improved.
As another embodiment, as shown in fig. 5, one metal strip in the metal frame 3 includes a bottom plate and a plurality of protruding strips 15 disposed above the bottom plate, and the light emitting angle of the flip-chip LED chip is adjusted by the protruding strips 15 to improve the light emitting efficiency of the device. Preferably, the metal strip is integrally formed, and the manufacturing process is simple and low in cost.
As another example, a plurality of beads 15 are arranged in the longitudinal direction of the metal strip, and one bead 15 is arranged in the width direction of the metal strip, as shown in fig. 5. The convex strip 15 surrounds the flip LED chip 4, and light emitted by one of the flip LED chips can be prevented from entering other flip LED chips through the metal frame with the structure, so that the light utilization rate of each flip LED chip is improved, and the light emitting efficiency of the neat device is further improved.
As another embodiment, the cross-sectional area of the protruding strips 15 gradually narrows away from the bottom surface, which is more beneficial to prevent light emitted from one of the flip-chip LED chips from entering other flip-chip LED chips and to improve the light utilization efficiency. Preferably, the ribs 15 are triangular or trapezoidal in cross-section.
As another embodiment, the metal frame is made of one or more of silver, copper, gold, aluminum, chromium, magnesium, calcium, sodium, tungsten, zinc, potassium, nickel, iron, tin, lead and mercury, and the electrolyte is one or more of copper sulfate, sodium chloride and potassium chloride. When the metal frame made of the materials is matched with the electrolyte, the electric connection effect of the LED device is good.
As another embodiment, as shown in fig. 6, the integrated LED device further includes a cold row 7 of a metal block structure, in which a cold row flow channel 16 communicated with the liquid guide tube 10 is disposed, and the electrolyte flows in the cold row flow channel 16; the top of the refrigerator is provided with a semiconductor refrigerator 13, and/or the lower part of the refrigerator is provided with a finned radiator 14 for enlarging the radiating area, so that the radiating effect can be enhanced. The temperature of the electrolyte flowing into the device after the electrolyte passes through the cold discharge 7 is low, the traditional vertical heat sink can be replaced by the liquid cooling of the electrolyte, the heat dissipation efficiency is further increased, and the working temperature of the LED device is reduced to be lower than the room temperature.
As another embodiment, an adhesive layer for facilitating adhesion between the ceramic base 2 and the metal frame 3 is further included between the ceramic base and the metal frame, and the material of the adhesive layer includes any one or more of copper, nickel, gold, and gold-tin alloy.
As another embodiment, the present invention further provides a method for manufacturing an integrated LED device, including:
manufacturing a ceramic base: sintering aluminum nitride powder into a ceramic base 2 by adopting a high-temperature sintering technology, wherein a plurality of rows of grooves 6 are formed in the ceramic base 2;
manufacturing a metal frame: taking a metal sheet, and manufacturing a plurality of rows of metal strips by adopting any one method of CNC (computerized numerical control) machining, die-opening die-casting or pouring, wherein the metal strips are arranged in parallel to form a metal frame 3;
manufacturing an LED module: welding a metal frame 3 on the ceramic base 2 by adopting a hot-pressing eutectic process or a spot soldering flux vacuum eutectic process, fixing the flip LED chip 4 on the metal frame 3, and carrying out air-tight packaging;
and (3) completing electrical connection: the groove 6 is communicated with the liquid guide tube 10, filled with electrolyte and connected with a power supply 9 to realize electric connection.
The manufacturing method provided by the invention has the advantages that the process of manufacturing the copper-electroplating dam with high cost and difficult inclination angle is omitted, the casting process is changed, the manufacturing method is simple and easy to implement, and the LED device is conducted through the electrolyte.
As another embodiment, the ceramic base is in the shape of a dam, and the bottom surface has a thickness of 300-600 μm and a height of 1200-2000 μm.
As another embodiment, the manufacturing of the ceramic base further includes manufacturing an adhesive layer on the ceramic base to facilitate the bonding of the ceramic base and the metal frame, wherein the material of the adhesive layer includes any one of copper, nickel, gold, and gold-tin alloy. Specifically, firstly, a magnetron sputtering technology is adopted, metal Cu is sputtered on the position, shown in figure 7, of the ceramic base, the thickness of the metal Cu is 0.5-3 mu m, the surface of Ni and Au is treated, the thickness of the Ni is 3 mu m, and the thickness of the Au is 0.05 mu m; secondly, adopting electron beam evaporation technology to evaporate the AuSn alloy again, wherein the thickness is 3-10 μm. The AuSn alloy also prevents the sputtered metallic Cu from being oxidized.
As another embodiment, the thickness of the metal sheet is 600-1200 μm, and the manufacturing of the metal frame further comprises a surface treatment of nickel plating. Specifically, Ni with a thickness of 3-5 μm and Au with a thickness of 0.03-0.1 μm are plated on the metal frame by electroplating to prevent the metal from being oxidized.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (8)
1. An integrated LED device is characterized by comprising an LED module, a power supply and a liquid guide pipe, wherein the LED module comprises a ceramic base, a metal frame and an inverted LED chip array; a plurality of rows of grooves for electrolyte to flow through are formed in the ceramic base, the metal frame is arranged on the ceramic base and comprises a plurality of rows of metal strips crossing over the grooves, gaps exist between every two adjacent metal strips, a plurality of flip LED chips are arranged above the gaps, and cathodes and anodes of the flip LED chips are respectively arranged on the two adjacent metal strips to form a flip LED chip array; the liquid guide pipe and the groove are in electric communication with the power supply through being filled with electrolyte;
the metal strip comprises a bottom plate and a plurality of convex strips arranged above the bottom plate, and the metal strip is integrally formed;
the power supply is connected in the following mode: the method comprises the following steps of arranging a plurality of liquid guide pipes into a row, inserting a positive electrode rod and a negative electrode rod into two adjacent liquid guide pipes from the head of the row respectively, enabling the arrangement directions of the cathodes and the anodes of the adjacent flip LED chips to be opposite, connecting the positive electrode rod with the anode of a power supply, and connecting the negative electrode rod with the cathode of the power supply.
2. The integrated LED device according to claim 1, wherein the LED modules are plural, and the grooves of adjacent LED modules are in communication.
3. The integrated LED device according to claim 1, wherein a plurality of the ribs are arranged in a longitudinal direction of the metal strip, and one of the ribs is arranged in a width direction of the metal strip.
4. The integrated LED device according to claim 3, wherein the cross-sectional area of the rib is gradually narrowed in a direction away from the base plate.
5. The integrated LED device according to claim 1, wherein the metal frame comprises one or more of silver, copper, gold, aluminum, chromium, magnesium, calcium, sodium, tungsten, zinc, potassium, nickel, iron, tin, lead, and mercury, and the electrolyte comprises one or more of copper sulfate, sodium chloride, and potassium chloride.
6. The integrated LED device according to claim 1, further comprising a cold row of metal block structure, wherein a flow channel is disposed inside the cold row, the flow channel is in communication with the liquid guide tube, a semiconductor cooler is disposed on the top of the cold row, and/or a finned heat sink is disposed on the lower portion of the cold row.
7. The integrated LED device according to claim 1, further comprising an adhesive layer between the ceramic base and the metal frame, wherein the adhesive layer comprises one or more of copper, nickel, gold, and gold-tin alloy.
8. A method of fabricating the integrated LED device according to any one of claims 1 to 7, wherein the method of fabricating comprises:
manufacturing a ceramic base: sintering aluminum nitride powder into a ceramic base, wherein a plurality of rows of grooves are formed in the ceramic base;
manufacturing a metal frame: preparing a plurality of rows of metal strips from metal sheets, wherein the metal strips are arranged in parallel at intervals to form a metal frame;
manufacturing an LED module: fixing the metal frame on the ceramic base, fixing the inverted LED chip on the metal frame to form an inverted LED chip array, and carrying out air-tight packaging;
and (3) completing electrical connection: and communicating the groove with the liquid guide pipe, filling the groove with electrolyte, and connecting a power supply to realize electric connection.
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