CN111653562A - Silicon carbide type insulated gate bipolar transistor - Google Patents
Silicon carbide type insulated gate bipolar transistor Download PDFInfo
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- CN111653562A CN111653562A CN202010605615.2A CN202010605615A CN111653562A CN 111653562 A CN111653562 A CN 111653562A CN 202010605615 A CN202010605615 A CN 202010605615A CN 111653562 A CN111653562 A CN 111653562A
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- silicon carbide
- insulated gate
- gate bipolar
- bipolar transistor
- type insulated
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 36
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 230000005669 field effect Effects 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 8
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 8
- 238000004806 packaging method and process Methods 0.000 claims abstract description 5
- 238000011084 recovery Methods 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 9
- 238000005538 encapsulation Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Inverter Devices (AREA)
Abstract
The invention provides a silicon carbide type insulated gate bipolar transistor which is formed by packaging a metal oxide semiconductor field effect transistor, a Darlington power tube and a silicon carbide diode. The silicon carbide diode has almost no reverse recovery time, can reduce the loss of the circuit to the minimum so as to solve the technical problem of low conversion efficiency of the existing medium-high power supply circuit, is suitable for a high-efficiency PFC circuit, has extremely high economic value, can be applied to the frequency below 100KHz, and widens the application range and application scenes.
Description
Technical Field
The invention relates to the technical field of electronics, in particular to a silicon carbide type insulated gate bipolar transistor.
Background
An Insulated Gate Bipolar Transistor (IGBT) is a composite fully-controlled voltage-driven power electronic device consisting of a Bipolar Transistor (BJT) and an Insulated Gate field effect Transistor (MOS), and has the advantages of both high input impedance of the MOSFET and low conduction voltage drop of the BJT. BJT saturation voltage is reduced, current carrying density is high, but driving current is large; the MOSFET has small driving power, high switching speed, large conduction voltage drop and small current carrying density. The IGBT integrates the advantages of the two devices, and has small driving power and reduced saturation voltage. The method is very suitable for being applied to the fields of current transformation systems with direct-current voltage of 600V or more, such as alternating-current motors, frequency converters, switching power supplies, lighting circuits, traction transmission and the like.
When the IGBT works, the drain region (P region) injects minority carriers-holes into the drift region (N region), so that the minority carriers-charges are stored in the drift region; when the IGBT is turned off (the gate voltage drops to 0), these stored charges cannot be removed immediately, and accordingly the drain current of the IGBT cannot be turned off immediately, i.e., the drain current waveform has a long tail, and the turn-off time is long. The operating frequency of the IGBT is low. The reverse recovery diode encapsulated inside the diode is a common fast diode, and has reverse recovery time, which can cause power loss such as heating caused by reverse current in application.
Disclosure of Invention
In view of the above, the present invention has been developed to provide a silicon carbide type insulated gate bipolar transistor that overcomes, or at least partially solves, the above-mentioned problems.
In order to solve the problems, the invention discloses a silicon carbide type insulated gate bipolar transistor which is formed by packaging a metal oxide semiconductor field effect transistor, a Darlington power tube and a silicon carbide diode.
Further, the metal oxide semiconductor field effect transistor is specifically configured as a low voltage drop metal oxide semiconductor field effect transistor.
Further, the metal-oxide-semiconductor field effect transistor, the Darlington power tube and the silicon carbide diode are packaged in a standard form.
Further, the metal oxide semiconductor field effect transistor, the Darlington power tube and the silicon carbide diode are packaged in a TO-247 form.
The invention has the following advantages: the silicon carbide diode has almost no reverse recovery time, can reduce the loss of the circuit to the minimum, is suitable for a high-efficiency PFC circuit, has extremely high economic value, can be applied to the frequency below 100KHz, and widens the application range and application scenes.
Drawings
Fig. 1 is a block diagram showing the structure of a silicon carbide-type insulated gate bipolar transistor according to the present invention.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
One of the core concepts of the present invention is to provide a silicon carbide type insulated gate bipolar transistor, which is formed by packaging a metal oxide semiconductor field effect transistor, a darlington power transistor and a silicon carbide diode. The silicon carbide diode has almost no reverse recovery time, can reduce the loss of the circuit to the minimum so as to solve the technical problem of low conversion efficiency of the existing medium-high power supply circuit, is suitable for a high-efficiency PFC circuit, has extremely high economic value, can be applied to the frequency below 100KHz, and widens the application range and application scenes.
Referring to fig. 1, a block diagram of a silicon carbide type insulated gate bipolar transistor according to the present invention is shown, wherein the silicon carbide type insulated gate bipolar transistor is formed by packaging a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), a darlington power transistor (GTR) and a silicon carbide diode.
The silicon carbide type Insulated Gate Bipolar Transistor provided by the embodiment adopts a high-speed Insulated Gate Bipolar Transistor (IGBT) design process; the encapsulated diode is a silicon carbide diode, the silicon carbide diode and the silicon carbide diode are encapsulated together by adopting a special process TO prepare a novel composite power switch device, and the final encapsulation form adopts TO-247 encapsulation or other standard encapsulation; the high-speed IGBT can be applied to frequencies below 100KHz, the application range and application scenes are widened, the high-speed IGBT is particularly suitable for a PFC circuit, and compared with an MOS, the high-speed IGBT has the advantage of low cost; the silicon carbide diode has almost no reverse recovery time, can reduce the loss of the circuit to the minimum, is particularly suitable for a high-efficiency PFC circuit, can replace a silicon carbide MOS to a certain extent, and has extremely high economic value.
Further, PFC (Power Factor Correction), Power Factor refers to the relationship between the effective Power and the total Power consumption (apparent Power), that is, the ratio of the effective Power divided by the total Power consumption (apparent Power). Basically, the power factor can measure the effective utilization degree of the power, and when the power factor value is larger, the power utilization rate is higher. By adopting the silicon carbide type insulated gate bipolar transistor provided by the application, the silicon carbide diode has almost no reverse recovery time, the loss of the circuit can be reduced to the minimum, and the technical problem of low conversion efficiency of the existing medium-high power supply circuit is solved.
In the present embodiment, the mosfet is specifically configured as a low-dropout mosfet.
In this embodiment, the mosfet, the darlington power transistor, and the silicon carbide diode are packaged in a standard form.
In this embodiment, the mosfet, the darlington power transistor and the silicon carbide diode are packaged in the form of TO-247.
Finally, it should also be noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or terminal that comprises the element.
The silicon carbide type insulated gate bipolar transistor provided by the invention is described in detail above, and the principle and the implementation mode of the invention are explained by applying specific examples in the text, and the description of the examples is only used for helping to understand the method and the core idea of the invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (4)
1. A silicon carbide type insulated gate bipolar transistor is characterized by being formed by packaging a metal oxide semiconductor field effect transistor, a Darlington power tube and a silicon carbide diode.
2. The silicon carbide-based insulated gate bipolar transistor of claim 1, wherein the mosfet is configured as a low-voltage-drop mosfet.
3. The silicon carbide-based igbt of claim 1 wherein the mosfet, the darlington power transistor, and the silicon carbide diode are packaged in standard form.
4. The silicon carbide-based igbt of claim 1 wherein the mosfet, the darlington power transistor, and the silicon carbide diode are packaged in a TO-247 format.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010605615.2A CN111653562A (en) | 2020-06-29 | 2020-06-29 | Silicon carbide type insulated gate bipolar transistor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010605615.2A CN111653562A (en) | 2020-06-29 | 2020-06-29 | Silicon carbide type insulated gate bipolar transistor |
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| Publication Number | Publication Date |
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| CN111653562A true CN111653562A (en) | 2020-09-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202010605615.2A Pending CN111653562A (en) | 2020-06-29 | 2020-06-29 | Silicon carbide type insulated gate bipolar transistor |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090289691A1 (en) * | 2008-05-21 | 2009-11-26 | Honeywell International Inc. | Method of switching and switching device for solid state power controller applications |
| CN101976683A (en) * | 2010-09-25 | 2011-02-16 | 浙江大学 | Insulated gate bipolar transistor and manufacturing method thereof |
| CN203406604U (en) * | 2013-08-08 | 2014-01-22 | Tcl空调器(中山)有限公司 | IGBT current foldback circuit and convertor assembly |
| CN103633071A (en) * | 2013-11-15 | 2014-03-12 | 四川长虹电器股份有限公司 | ESD (Electro-Static Discharge) protection circuit |
| US20190326806A1 (en) * | 2018-04-24 | 2019-10-24 | Texas Instruments Incorporated | Gate drive adapter |
| CN212725303U (en) * | 2020-06-29 | 2021-03-16 | 深圳市瀚强科技股份有限公司 | Silicon carbide type insulated gate bipolar transistor |
-
2020
- 2020-06-29 CN CN202010605615.2A patent/CN111653562A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090289691A1 (en) * | 2008-05-21 | 2009-11-26 | Honeywell International Inc. | Method of switching and switching device for solid state power controller applications |
| CN101976683A (en) * | 2010-09-25 | 2011-02-16 | 浙江大学 | Insulated gate bipolar transistor and manufacturing method thereof |
| CN203406604U (en) * | 2013-08-08 | 2014-01-22 | Tcl空调器(中山)有限公司 | IGBT current foldback circuit and convertor assembly |
| CN103633071A (en) * | 2013-11-15 | 2014-03-12 | 四川长虹电器股份有限公司 | ESD (Electro-Static Discharge) protection circuit |
| US20190326806A1 (en) * | 2018-04-24 | 2019-10-24 | Texas Instruments Incorporated | Gate drive adapter |
| CN212725303U (en) * | 2020-06-29 | 2021-03-16 | 深圳市瀚强科技股份有限公司 | Silicon carbide type insulated gate bipolar transistor |
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Address after: 1101, Building D1, Nanshan Zhiyuan, No. 1001 Xueyuan Avenue, Changyuan Community, Taoyuan Street, Nanshan District, Shenzhen City, Guangdong Province, 518055 Applicant after: SHENZHEN HANQIANG TECHNOLOGY Co.,Ltd. Address before: Unit ghijklm, block B, 7 / F, building 7, Baoneng Science Park, Qinghu village, Qinghu community, Longhua street, Shenzhen, Guangdong 518000 Applicant before: SHENZHEN HANQIANG TECHNOLOGY Co.,Ltd. |
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