CN110673436B - Photomask, method for manufacturing photomask, and method for manufacturing display device - Google Patents
Photomask, method for manufacturing photomask, and method for manufacturing display device Download PDFInfo
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- CN110673436B CN110673436B CN201910982223.5A CN201910982223A CN110673436B CN 110673436 B CN110673436 B CN 110673436B CN 201910982223 A CN201910982223 A CN 201910982223A CN 110673436 B CN110673436 B CN 110673436B
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- 239000004973 liquid crystal related substance Substances 0.000 description 5
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- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 4
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- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 2
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/56—Organic absorbers, e.g. of photo-resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
- G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention relates to a photomask, a method for manufacturing the photomask, a photomask blank and a method for manufacturing a display device. Is advantageously suitable for the exposure environment of a mask for manufacturing a display device, and can stably transfer a minute pattern. The photomask has a transfer pattern formed by patterning a semi-transparent film and a low-transparent film formed on a transparent substrate, respectively, the transfer pattern having: a main pattern having a diameter W1 (μm) formed by exposing the light-transmitting portion of the transparent substrate; an auxiliary pattern having a width d (μm) formed by a semi-transmissive portion having the semi-transmissive film formed on the transparent substrate, the auxiliary pattern being disposed in the vicinity of the main pattern; and a low-transmittance portion disposed in a region of the transfer pattern other than the main pattern and the auxiliary pattern, wherein at least the low-transmittance film is formed on the transparent substrate, and wherein the diameter W1 of the main pattern, the transmittance T1 of the semi-transmissive portion, and the width d of the semi-transmissive portion have a predetermined relationship.
Description
The present invention relates to a method for manufacturing a photomask, a photomask blank, and a display device, and is a divisional application filed in patent application publication No. 201510418721.9, HOYA corporation, entitled "photomask, method for manufacturing a photomask", and 16-month patent application publication No. 2015.
Technical Field
The present invention relates to a photomask blank, a photomask, a method for manufacturing a photomask, and a method for manufacturing a display device using the photomask, which are effectively used for manufacturing a display device typified by a liquid crystal or an organic EL.
Background
Patent document 1 describes a phase shift mask used for manufacturing a semiconductor device, in which 4 auxiliary light transmitting portions are arranged parallel to each side of a main light transmitting portion (hole pattern), and the phases of light of the main light transmitting portion and the auxiliary light transmitting portion are reversed.
Patent document 2 describes a large-sized phase shift mask having a transparent substrate and a semitransparent phase shift film formed on the transparent substrate.
Patent document 1: japanese patent laid-open No. 3-15845
Patent document 2: japanese patent laid-open No. 2013-148892
Currently, in display devices including liquid crystal display devices, EL display devices, and the like, it is desired to be brighter and to save power, and to improve display performance such as high definition, high-speed display, wide viewing angle, and the like.
For example, in the case of a thin film transistor (Thin Film Transistor, "TFT") used in the display device, among a plurality of patterns constituting the TFT, if a contact hole formed in an interlayer insulating film does not have a function to reliably connect patterns of an upper layer and a lower layer, an accurate operation cannot be ensured. On the other hand, in order to maximize the aperture ratio of the display device and to provide a bright, power-saving display device, the diameter of the contact hole needs to be extremely small. With this, it is desirable that the diameter of the hole pattern provided in the photomask for forming such contact holes be also reduced (for example, to less than 3 μm). For example, a hole pattern having a diameter of 2.5 μm or less, and further a hole pattern having a diameter of 2.0 μm or less is required, and in recent years, it is considered that a pattern having a diameter of 1.5 μm or less of less than 2.0 μm is desired. In view of such a background, a technique for manufacturing a display device capable of reliably transferring a minute contact hole is required.
However, in the field of photomasks for manufacturing semiconductor devices (LSI) in which integration is high and miniaturization of patterns is significantly advanced as compared with display devices, in order to obtain high resolution, an optical system having a high NA (Numerical Aperture: numerical aperture) (for example, 0.2 or more) is applied to an exposure device, and there is a progress in shortening the wavelength of exposure light, and excimer lasers (single wavelengths of 248nm and 193nm, respectively) of KrF and ArF are often used.
On the other hand, in the field of photolithography for manufacturing a display device, the above-described method is not generally applied in order to improve the resolution. An exposure apparatus known as an LCD has an NA of about 0.08 to 0.10, and an exposure light source uses a wide wavelength range including i line, h line, and g line, so that production efficiency and cost tend to be emphasized rather than resolution and focus depth.
However, even in the production of the display device as described above, the miniaturization of the pattern is not required. Here, there are several problems in using the technology for manufacturing a semiconductor device as it is for manufacturing a display device. For example, conversion to a high-resolution exposure apparatus having a high NA (numerical aperture) requires a large investment, and cannot be matched with the price of the display apparatus. Alternatively, it is difficult to apply the exposure wavelength to a display device having a large area by changing the exposure wavelength (using a single wavelength such as ArF excimer laser), and even if the exposure wavelength is applied, it is not suitable in terms of requiring a considerable investment in addition to a reduction in production efficiency.
As will be described later, there are various problems that are different from a photomask for manufacturing a semiconductor device, such as manufacturing constraints and characteristics.
In view of the above, it is practically difficult to convert the photomask of document 1 to a display device without modification. The halftone type phase shift mask described in document 2 has a description of an improvement in light intensity distribution as compared with a binary mask, but there is room for improvement in performance.
Disclosure of Invention
Accordingly, in a method for manufacturing a display device using a mask for manufacturing a display device, it is desired to overcome the above-described problems, and it is desired to stably perform transfer onto a transfer target even for a minute pattern. Accordingly, an object of the present invention is to provide an excellent photomask which is advantageously suitable for an exposure environment of a mask for manufacturing a display device and which can stably transfer a minute pattern, and a manufacturing method thereof.
In order to solve the above problems, the present invention has the following configuration. The present invention is a photomask characterized by the following structures 1 to 9, a method for manufacturing a photomask characterized by the following structure 10, a method for manufacturing a display device characterized by the following structure 11, and a photomask blank for manufacturing a display device characterized by the following structures 12 and 13.
(Structure 1)
The structure 1 of the present invention is a photomask having a pattern for transfer formed by patterning a semi-transparent film and a low-transparent film formed on a transparent substrate, respectively, wherein the semi-transparent film shifts light of a representative wavelength in a wavelength range of i-line to g-line by approximately 180 degrees and has a transmittance T1 (%) with respect to the representative wavelength, the low-transparent film has a transmittance T2 (%) lower than the transmittance T1 (%) of the semi-transparent film with respect to the light of the representative wavelength, and the pattern for transfer has: a main pattern having a diameter W1 (μm) formed by exposing the light-transmitting portion of the transparent substrate; an auxiliary pattern having a width d (μm) formed by a semi-transmissive portion having the semi-transmissive film formed on the transparent substrate, the auxiliary pattern being disposed in the vicinity of the main pattern; and a low light-transmitting portion which is disposed in a region of the transfer pattern other than the main pattern and the auxiliary pattern and in which at least the low light-transmitting film is formed on the transparent substrate, the low light-transmitting portion satisfying the following formulas (1) and (2),
0.8≤W1≤4.0…(1)
(Structure 2)
According to the photomask of the structure 1, the structure 2 of the present invention is characterized in that the width d of the auxiliary pattern satisfies d.ltoreq.w1.
(Structure 3)
According to the photomask described in the structure 1 or 2, the structure 3 of the present invention is characterized in that the diameter W1 of the main pattern in the transfer pattern is 4.0 (μm) or less, and a hole pattern having a diameter W2 (W1 > W2) is formed in the transfer object in correspondence with the main pattern.
(Structure 4)
According to the photomask described in any one of the structures 1 to 3, the structure 4 of the present invention is characterized in that the diameter W1 of the main pattern in the transfer pattern is 4.0 (μm) or less, and a hole pattern having a diameter W2 of 3.0 (μm) or less (where W1 > W2) is formed on the transfer object in correspondence with the main pattern.
(Structure 5)
According to the photomask described in the structure 3 or 4, the structure 5 of the present invention is characterized in that when the difference W1-W2 between the diameter W1 of the main pattern and the diameter W2 of the transferred object is set to be the offset β (μm), β is equal to or smaller than 0.2 and equal to or smaller than 1.0.
(Structure 6)
The photomask according to any one of the structures 1 to 5, wherein the transmittance T2 (%) of the low light-transmitting film with respect to the light of the representative wavelength satisfies T2 < 30.
(Structure 7)
The photomask according to any of the structures 1 to 6, wherein the low light-transmitting film is substantially impermeable to light of the representative wavelength.
(Structure 8)
The photomask according to any one of the configurations 1 to 7, wherein the light-transmitting portion exposes the transparent substrate, the semi-transmitting portion is formed with the semi-transmitting film on the transparent substrate, and the low-light-transmitting portion is formed by laminating the semi-transmitting film and the low-light-transmitting film on the transparent substrate.
(Structure 9)
The photomask according to any one of the structures 1 to 8, wherein the semi-transparent film is made of a material containing Si and any one of Zr, nb, hf, ta, mo, ti, or a material containing an oxide, nitride, oxynitride, carbide, or oxynitrided carbide of the above-mentioned materials.
(Structure 10)
The structure 10 of the present invention is a method for manufacturing a photomask, which includes a transfer pattern formed on a transparent substrate and used for forming an independent hole pattern on a transfer object, the method comprising: preparing a photomask blank in which a semi-transparent film and a low-transparent film are laminated on the transparent substrate to form a first photoresist film; a step of forming a first resist pattern by developing the first resist film by performing a first drawing based on the predetermined transfer pattern; forming a low-light-transmission film pattern by wet etching the low-light-transmission film with the first resist pattern as a mask; removing the first resist pattern and forming a second photoresist film over the entire surface including the low light transmission film pattern; a step of forming a second resist pattern by performing a second drawing on the second photoresist film and developing the second photoresist film; and a step of wet etching the semi-transparent film using the second resist pattern and the low-transmittance film pattern as masks, wherein the semi-transparent film shifts light of a representative wavelength in a wavelength range of i-line to g-line by approximately 180 degrees and has a transmittance T1 (%) with respect to the representative wavelength, the low-transmittance film has a transmittance T2 (%) lower than the transmittance T1 (%) of the semi-transparent film with respect to the light of the representative wavelength, and the transfer pattern has: a main pattern having a diameter W1 (μm) formed by exposing the light-transmitting portion of the transparent substrate; an auxiliary pattern having a width d (μm) formed by a semi-transmissive portion having the semi-transmissive film formed on the transparent substrate, the auxiliary pattern being disposed in the vicinity of the main pattern; and a low light-transmitting portion which is arranged in a region of the transfer pattern, in which the main pattern and the auxiliary pattern are formed, and in which at least the low light-transmitting film is formed on the transparent substrate, and satisfies the following formulas (1) and (2),
0.8≤W1≤4.0…(1)
(Structure 11)
The structure 11 of the present invention is a manufacturing method of a display device, including: a step of preparing the photomask according to any one of structures 1 to 9; and a step of exposing the transfer pattern by using an exposure device having a Numerical Aperture (NA) of 0.08 to 0.20 and having an exposure light source including an i-line, an h-line, and a g-line, thereby forming a hole pattern having a diameter W2 of 0.6 to 3.0 (μm) on the transfer object.
(Structure 12)
The structure 12 of the present invention is a photomask blank for manufacturing a display device, wherein a semi-transparent film having a transmittance T1 of 30 to 80 (%) with respect to a representative wavelength in a wavelength range of i-line to g-line and a low-transmittance film having a transmittance of less than the semi-transparent film are laminated on the transparent substrate, and the photomask blank for manufacturing a display device is characterized in that the semi-transparent film has a refractive index of 1.5 to 2.9 with respect to the representative wavelength and is formed to have a film thickness of substantially 180 degrees of phase shift, and the low-transmittance film substantially does not transmit light of the representative wavelength or has a transmittance of less than 30% and a substantially 180 degrees of phase shift.
(Structure 13)
According to the photomask blank for manufacturing a display device described in structure 12, the structure 13 of the present invention is characterized in that the semi-transparent film may be made of a material containing a transition metal of Zr, nb, hf, ta, mo, ti and Si, or a material containing an oxide, nitride, oxynitride, carbide, or oxynitride thereof.
According to the present invention, an excellent photomask which is advantageously suitable for an exposure environment of a mask for manufacturing a display device and which can stably transfer a minute pattern, and a manufacturing method thereof can be provided.
Drawings
In fig. 1, (a) is a schematic plan view of one example of the photomask of the present invention, and (b) is a schematic sectional view thereof.
In fig. 2, (a) to (f) are schematic plan views of other examples of the photomask of the present invention.
Fig. 3 is a schematic cross-sectional view and a schematic plan view showing an example of a process for manufacturing a photomask according to the present invention.
Fig. 4 is a schematic plan view of photomasks of comparative examples 1-1, 1-2 and example 1, showing dimensions and transfer performance based on optical simulation.
Fig. 5 shows a case where the photomasks of comparative examples 1-1, 1-2 and example 1 are used, in which (a) is an aerial image showing the intensity of light formed on the transfer object in this case, and (b) 25 is a view showing the cross-sectional shape of the resist pattern formed thereby.
Fig. 6 is a schematic plan view of photomasks of comparative examples 2-1, 2-2 and example 2, showing dimensions and transfer performance based on optical simulation.
Fig. 7 shows a case where the photomasks of comparative examples 2-1, 2-2 and example 2 are used, in which (a) is an aerial image showing the intensity of light formed on the transfer object in this case, and (b) is a view showing the cross-sectional shape of the resist pattern formed thereby.
Detailed Description
If the CD (Critical Dimension, hereinafter, used in the meaning of pattern line width) of the transfer pattern included in the photomask is miniaturized, it becomes more difficult to perform a process of accurately transferring the pattern to a target (a thin film to be subjected to etching, or the like, also referred to as a target). In many cases, the resolution limit shown as a standard in an exposure apparatus for a display device is about 2 μm to 3 μm. In contrast, among the transfer patterns to be formed, a pattern having a size close to or lower than the size has appeared. Further, since the mask for manufacturing a display device has a larger area than the mask for manufacturing a semiconductor device, it is difficult to uniformly transfer a transfer pattern having a CD of less than 3 μm in a plane in practical production.
Therefore, it is necessary to exert transfer performance effectively by taking work on elements other than the pure resolution (depending on the exposure wavelength and the numerical aperture of the exposure optical system).
Further, since the area of the transfer target (flat panel display substrate) is large, it is said that an environment in which defocus due to the surface flatness of the transfer target is likely to occur is also provided in the step of pattern transfer by exposure. In this environment, it is very significant to sufficiently secure the Depth of field (DOF: depth of Focus) of the Focus at the time of exposure.
In addition, as is known, a photomask for manufacturing a display device is large in size, and it is not easy to ensure uniformity of CD at all positions in a plane in wet processing (development, wet etching) in a photomask manufacturing process. Even if the final CD accuracy is within a predetermined allowable range, it is very important to ensure a sufficient depth of focus (DOF) in the exposure process, and other performances are not required to be deteriorated.
A photomask is provided with a transfer pattern formed by patterning a semi-transparent film and a low-transparent film formed on a transparent substrate, respectively. Fig. 1 illustrates a pattern for transfer having a photomask of the present invention. In fig. 1, (a) is a schematic plan view, and (b) is a schematic sectional view.
As shown in fig. 1 (a), the transfer pattern formed on the transparent substrate includes a main pattern and an auxiliary pattern disposed in the vicinity of the main pattern.
In this embodiment, the main pattern is formed of a light-transmitting portion exposing the transparent substrate, and the auxiliary pattern is formed of a semi-transmitting portion having a semi-transmitting film formed on the transparent substrate. The portion surrounding the main pattern and the auxiliary pattern is a low light transmission portion in which at least a low light transmission film is formed on the transparent substrate. That is, in the transfer pattern shown in fig. 1, the region other than the region where the main pattern and the auxiliary pattern are formed is the low light transmission portion. As shown in fig. 1 (b), in this embodiment, a semi-transparent film and a low-transparent film are laminated on a transparent substrate in a low-transparent portion. The semi-transparent film has a phase shift amount for shifting light of a representative wavelength within a wavelength range of i-line to g-line by approximately 180 degrees, and has a transmittance T1 (%) with respect to the representative wavelength.
The low light-transmitting film of the photomask of the present invention is a film capable of having a predetermined low transmittance with respect to the representative wavelength of exposure light. The low-transmittance film used for producing the photomask of the present invention can have a transmittance T2 (%) lower than the transmittance T1 (%) of the semi-transparent film with respect to light having a representative wavelength in the wavelength range of i-line to g-line.
Here, when the diameter (W1) of the main pattern is 4 μm or less, a minute main pattern (hole pattern) having a diameter W2 (μm) (where W1 > W2) can be formed on the transfer object corresponding to the main pattern.
Specifically, W1 (μm) is preferably set to the relationship shown in the following formula (1).
0.8≤W1≤4.0…(1)
The diameter W2 (μm) of the main pattern (hole pattern) formed on the transfer object at this time can be 0.6.ltoreq.W2.ltoreq.3.0.
The photomask of the present invention can be used for the purpose of forming a pattern of a minute size useful for manufacturing a display device. For example, when the diameter W1 of the main pattern is 3.0 (μm) or less, the effect of the present invention is more remarkable. The diameter W1 (μm) of the main pattern can be preferably 1.0.ltoreq.W1.ltoreq.3.0. In addition, although the relationship between the diameter W1 and the diameter W2 can be represented by w1=w2, W1 > W2 is preferable. That is, when β (μm) is set as the offset value, β=w1—w2 > 0 (μm), 0.2+.ltoreq.1.0, and more preferably 0.2+.ltoreq.0.8. As described later, the advantageous effects such as reduction in loss of the resist pattern on the transfer target can be obtained.
In the above, the diameter W1 of the main pattern means the diameter of a circle or a value approximate thereto. For example, when the shape of the main pattern is a regular polygon, the diameter W1 of the main pattern is the diameter of an inscribed circle. If the shape of the main pattern is square as shown in fig. 1, the diameter W1 of the main pattern is the length of one side. The diameter W2 of the transferred main pattern is the same as the diameter of a circle or a value similar thereto.
Of course, when a more miniaturized pattern is to be formed, W1 may be 2.5 (μm) or less, or 2.0 (μm) or less, and the present invention may be applied to a pattern in which W1 is 1.5 (μm) or less.
In contrast to a transfer printing apparatus having such a configurationRepresentative wavelength of exposure light used for exposure of the photomask of the present invention of pattern, phase difference of main pattern and auxiliary patternApproximately 180 degrees. That is, the phase difference between the light having the representative wavelength transmitted through the main pattern and the light having the representative wavelength transmitted through the auxiliary pattern is +.>Approximately 180 degrees. Approximately 180 degrees means 120 to 240 degrees. Preferably phase difference->150-210 degrees.
In addition, the photomask of the present invention has remarkable effect of using exposure light including i-line, h-line, or g-line, and is particularly suitable for using a wide wavelength including i-line, h-line, and g-line as exposure light. In this case, the representative wavelength may be any of i-line, h-line, and g-line. For example, the photomask of the present invention can be configured with the h-line as a representative wavelength.
In order to form such a phase difference, the main pattern may be a light transmitting portion where the main surface of the transparent substrate is exposed, the auxiliary pattern may be a semi-transmitting portion where a semi-transmitting film is formed on the transparent substrate, and the phase shift amount of the semi-transmitting film with respect to the representative wavelength may be approximately 180 degrees.
The light transmittance T1 of the semi-light-transmitting portion can be set as follows. That is, when the transmittance of the semi-transmissive film formed in the semi-transmissive portion with respect to the representative wavelength is T1 (%), T1 is 30.ltoreq.80. More preferably 40.ltoreq.T1.ltoreq.75. The transmittance T1 (%) is the transmittance at the above-described representative wavelength with the transmittance of the transparent substrate as a reference.
In the photomask of the present invention, the low light-transmitting portion which is disposed in the region other than the main pattern and the auxiliary pattern and is formed so as to surround the main pattern and the auxiliary pattern can be configured as follows.
The low light-transmitting portion is a low light-transmitting film (i.e., a light-shielding film) that is substantially impermeable to exposure light (light having a representative wavelength in the wavelength range of i-line to g-line), and may be a film having an optical density OD of at least 2 (preferably OD of at least 3, more preferably OD of at least 5) formed on a transparent substrate.
Alternatively, the low light-transmitting portion may be formed by forming a low light-transmitting film that transmits exposure light within a predetermined range. Here, when the exposure light is transmitted within a predetermined range, the transmittance T3 (%) of the low light transmission portion (here, the transmittance of the laminate in the case where the semi-transmissive film and the low light transmission film are laminated) satisfies 0 < T3 < T1. Preferably 0 < T3.ltoreq.20. The transmittance T3 (%) is the transmittance at the representative wavelength described above with reference to the transmittance of the transparent substrate.
In addition, when the low light-transmitting film transmits exposure light with a predetermined transmittance, it is preferable that the phase difference between the transmitted light of the low light-transmitting portion and the transmitted light of the light-transmitting portionIs 90 degrees or less, more preferably 60 degrees or less. "90 degrees or less" means that the phase difference is "(2 n-1/2) pi to (2n+1/2) pi (where n is an integer) when expressed in radians. As described above, the phase difference is calculated as a phase difference with respect to a representative wavelength included in the exposure light.
In addition, as the individual property of the low light-transmitting film used for the photomask of the present invention, it is preferable that the light of the above-mentioned representative wavelength is not substantially transmitted, or that the film has a transmittance (T2 (%)) (i.e., 0 < T2 < 30) of less than 30 (%) and a phase shift amountIs approximately 180 degrees. Approximately 180 degrees means 120 to 240 degrees. Preferably phase difference->Is 150-210 degrees.
Here, the transmittance is the transmittance of the representative wavelength based on the transmittance of the transparent substrate, as described above.
In the above-described transfer pattern, when the width of the auxiliary pattern is d (μm), the excellent effect of the invention can be obtained when the following formula (2) is established between the width d of the auxiliary pattern and the light transmittance T1 in the portion.
Here the number of the elements is the number,is a factor (hereinafter, simply referred to as a factor) indicating the amount of light transmitted through the auxiliary pattern. Equation (2) shows that if the factor is greater than 1.5, the loss of thickness of the slit (slit) portion of the resist layer becomes greater than the allowable range as shown in fig. 5 (b), and if the factor is greater than 0.5, a sufficient resolution cannot be obtained. At this time, the distance between the center of the main pattern and the center of the auxiliary pattern in the width direction is set to a pitch P (μm), and the pitch P preferably satisfies a relationship of 1.0 < P.ltoreq.5.0. More preferably, the pitch P is 1.5 < P.ltoreq.4.5.
In the present invention, the auxiliary Pattern has an effect of functioning optically as a Dense Pattern (Pattern) with respect to the main Pattern which is independent from the design, but when the above-described relational expression is satisfied, the exposure light transmitted through the main Pattern and the auxiliary Pattern interact favorably with each other, and excellent transfer performance as shown in the examples described later can be exhibited.
The width d (μm) of the auxiliary pattern is a dimension (e.g., d.ltoreq.3.0, preferably d.ltoreq.2.5) equal to or smaller than the resolution limit under the exposure conditions (exposure apparatus used) applied to the photomask of the present invention, and is specifically exemplified by d.ltoreq.0.7, more preferably d.ltoreq.0.8. In addition, d is preferably equal to or less than W1, and more preferably d < W1.
Further, the above-mentioned relational expression (2) is more preferably the following expression (2) -1, and still more preferably the following expression (2) -2.
As described above, the main pattern of the photomask shown in fig. 1 is square, but the present invention is not limited thereto. For example, as exemplarily shown in fig. 2, the main pattern of the photomask can have a rotationally symmetrical shape including octagons, circles. The center of the rotational symmetry can be set as the center of the reference of P.
The shape of the auxiliary pattern of the photomask shown in fig. 1 is an octagonal band, but the present invention is not limited thereto. The shape of the auxiliary pattern is preferably a shape given a certain width to the shape of the rotation object which is symmetrical 3 times or more with respect to the center of the hole pattern. The shapes of the main pattern and the auxiliary pattern are preferably the shapes exemplified in (a) to (f) of fig. 2, and the design of the main pattern and the design of the auxiliary pattern may be different from each other in (a) to (f) of fig. 2.
For example, the outer periphery of the auxiliary pattern is a regular polygon (preferably a regular 2n polygon where n is an integer of 2 or more) such as a square, a regular hexagon, a regular octagon, or a regular decagon, or a circle. The shape of the auxiliary pattern is preferably a shape in which the outer periphery and the inner periphery of the auxiliary pattern are substantially parallel, that is: preferably in the shape of a regular polygon or a circular band having a substantially constant width. The shape of the band is also referred to as a polygonal band or a circular band. As the shape of the auxiliary pattern, such a regular polygonal band or circular band is preferably a shape surrounding the circumference of the main pattern. In this case, since the light quantity balance between the transmitted light of the main pattern and the transmitted light of the auxiliary pattern can be made substantially equal, the interaction of light for obtaining the operation effect of the present invention can be easily obtained.
In particular, when the photomask of the present invention is used as a photomask for manufacturing a display device, namely: when the photomask of the present invention is used in combination with a photoresist layer for manufacturing a display device, the loss of the resist layer in the portion corresponding to the auxiliary pattern on the transferred body can be reduced.
Alternatively, the shape of the auxiliary pattern may not completely surround the periphery of the main pattern, and a part of the polygonal band or the circular band may be partially missing. The shape of the auxiliary pattern may be a shape in which corners of the quadrangular belt are missing, for example, as shown in fig. 2 (f).
In addition, as long as the effect of the present invention is not affected, other patterns may be used in addition to the main pattern and the auxiliary pattern of the present invention.
An example of a method for manufacturing a photomask according to the present invention will be described below with reference to fig. 3.
As shown in fig. 3 (a), a photomask blank is prepared.
The photomask blank is formed with a semi-transparent film and a low-transmittance film in this order on a transparent substrate made of glass or the like, and is coated with a first photoresist film.
The semi-transparent film is as follows: on the main surface of the transparent substrate, when any one of the i-line, h-line, and g-line is used as a representative wavelength, the transmittance thereof is 30 to 80 (%) (when T1 (%) is used as the transmittance, 30.ltoreq.T1.ltoreq.80), more preferably 40 to 75 (%), and the phase shift amount with respect to the representative wavelength is approximately 180 degrees. With such a semi-transmissive film, the transmitted light phase difference between the main pattern constituted by the light-transmissive portion and the auxiliary pattern constituted by the semi-transmissive portion can be made approximately 180 degrees. Such a semi-transmissive film shifts the phase of light of a representative wavelength in the wavelength range of i-line to g-line by approximately 180 degrees. As a method for forming the semi-transparent film, a known method such as a sputtering method can be used.
The semi-transparent film preferably satisfies the transmittance and the retardation described above, and is made of a material that can be wet etched as described below. Among them, if the amount of side etching generated during wet etching is too large, problems such as deterioration of CD precision, damage of an upper layer film due to undercut (undercut) and the like are generated, and the range of film thickness is preferably set toThe following is given.For example +.>More preferably +.>Here, CD is Critical Dimension, and is used in the meaning of pattern line width in this specification.
In order to satisfy the above conditions, the refractive index of the representative wavelength (for example, h line) included in the exposure light of the semi-transparent film material is preferably 1.5 to 2.9. More preferably 1.8 to 2.4.
In order to sufficiently exhibit the phase shift effect, it is preferable that a pattern cross section (etched surface) by wet etching is perpendicular to the main surface of the transparent substrate.
In consideration of the above properties, the film material of the semi-transparent film may be composed of a material containing Si and any one of Zr, nb, hf, ta, mo, ti, or a material containing an oxide, nitride, oxynitride, carbide, or oxynitrided carbide of the above materials.
A low light transmission film is formed on the semi-light transmission film of the photomask blank. As a film forming method, a known method such as sputtering can be applied as in the case of a semi-transparent film.
The low-transmittance film of the photomask blank can be substantially impermeable to exposure light. Or a film having a predetermined low transmittance with respect to the representative wavelength of the exposure light. The low-transmittance film used for producing the photomask of the present invention has a transmittance T2 (%) lower than the transmittance T1 (%) of the semi-transmissive film with respect to light of a representative wavelength in the wavelength range of i-line to g-line.
In the case where the low light-transmitting film is capable of transmitting exposure light, it is desirable that the low light-transmitting film has a transmittance and a phase shift amount with respect to the exposure light so as to achieve the transmittance and the phase shift amount of the low light-transmitting portion of the photomask of the present invention. Preferably, in the laminated state of the low light transmission film and the semi-light transmission film, the transmittance T3 (%) of light having a representative wavelength with respect to exposure light is t3.ltoreq.20, and the phase shift amount is equal to or lessIs 90 (degrees) or less, more preferably 60 (degrees) or less.
As the individual property of the low light-transmitting film, it is preferable that the light of the above representative wavelength is not substantially transmitted, or that the light has a transmittance (T2 (%)) (i.e., 0 < T2 < 30) of less than 30 (%), the phase shift amountApproximately 180 degrees. Approximately 180 degrees means 120 to 240 degrees. Preferably phase difference->150 to 210 degrees.
The material of the low light-transmitting film of the photomask blank may be Cr or a compound thereof (oxide, nitride, carbide, oxynitride, or carbonitride-fluoroneon), or may be silicide of a metal containing Mo, W, ta, ti, or may be the above compound of the silicide. Among these, the material of the low light-transmitting film of the photomask blank can be wet etched as in the case of the semi-transmitting film, and is preferably a material having etching selectivity with respect to the material of the semi-transmitting film. That is, the low light-transmitting film is required to have resistance to the etchant of the semi-transmitting film, and the semi-transmitting film is required to have resistance to the etchant of the low light-transmitting film.
A first photoresist film is also coated on the low light transmission film of the photomask blank. The photomask of the present invention is preferably drawn by a laser drawing device, and is a photoresist layer suitable for the laser drawing device. The first photoresist film may be a positive film or a negative film, and is described below as a positive film.
Next, as shown in fig. 3 b, a drawing (first drawing) is performed on the first photoresist film by using a drawing device based on drawing data based on the pattern for transfer. Then, the low light transmission film is wet etched using the first resist pattern obtained by development as a mask. This divides the region into low light-transmitting portions, and further divides the region of the auxiliary pattern (low light-transmitting film pattern) surrounded by the low light-transmitting portions. As the etching liquid (wet etchant) for performing wet etching, a known etching liquid having a composition suitable for a low light transmission film to be used can be used. For example, if the film contains Cr, ammonium cerium nitrate or the like can be used as the wet etchant.
Next, as shown in fig. 3 (c), the first resist pattern is stripped.
Next, as shown in (d) of fig. 3, a second photoresist film is coated on the entire surface including the formed low light transmission film pattern.
Next, as shown in fig. 3 (e), a second drawing is performed on the second photoresist film, and a second resist pattern formed by development is formed. Wet etching of the semi-transparent film is performed using the second resist pattern and the low-transparent film pattern as masks. By this etching (development), a region of the main pattern formed by the light-transmitting portion of the transparent substrate is formed. The second resist pattern is preferably a pattern that covers the region that is the auxiliary pattern and has an opening in the region that is the main pattern formed by the light-transmitting portion, and is preferably applied with glue to the drawing data of the second drawing so that the edge of the low-light-transmitting film is exposed from the opening. In this way, misalignment occurring between the first drawing and the second drawing can be absorbed, and deterioration of CD accuracy of the transfer pattern can be prevented.
That is, by applying the second resist pattern at the time of the second drawing in this way, when the independent hole pattern is to be formed on the transfer object, the patterning between the light shielding film and the semi-transmissive film does not cause a positional shift, so that the centers of gravity of the main pattern and the auxiliary pattern can be accurately aligned in the pattern for transfer shown by way of example in fig. 1.
The wet etchant for the semi-transparent film is appropriately selected according to the composition of the semi-transparent film.
Next, as shown in fig. 3 (f), the second resist pattern is stripped, and the photomask of the present invention shown in fig. 1 is completed.
In the production of a photomask for a display device, when an optical film such as a light shielding film formed on a transparent substrate is patterned, dry etching and wet etching are suitable for etching. Either can be used, but wet etching is particularly advantageous in the present invention. This is because the size of the photomask for the display device is relatively large, and there are various sizes. In manufacturing such a photomask, if dry etching using a vacuum chamber is applied, the dry etching apparatus is inefficient in terms of the size and manufacturing process.
Among them, wet etching is also associated with the use of such photomasks. Since wet etching has an isotropic etching property, when a predetermined film is etched and eluted in the depth direction, etching proceeds in a direction perpendicular to the depth direction. For example, when a slit is formed by etching a semi-transparent film having a film thickness F (nm), the opening of a resist pattern to be an etching mask is smaller than a desired slit width by 2F (nm) (i.e., smaller on one side than F (nm)), but it is more difficult to maintain the dimensional accuracy of the resist pattern opening as a slit having a smaller width is made. Therefore, it is useful that the width d of the auxiliary pattern is 1 μm or more, preferably 1.3 μm or more.
In addition, when the film thickness F (nm) is large, since the side etching amount is also large, even if the film thickness is small, it is advantageous to use a film material having a phase shift of approximately 180 degrees, and as a result, it is desirable that the refractive index of the semi-transparent film is high with respect to the wavelength. Therefore, a material having a refractive index of 1.5 to 2.9, preferably 1.8 to 2.4, with respect to the representative wavelength is used, and a semi-transparent film is preferable.
The present invention includes a method for manufacturing a display device, including a step of exposing the photomask of the present invention with an exposure device to transfer the pattern for transfer to a transfer object.
In the method for manufacturing a display device of the present invention, the photomask of the present invention described above is first prepared. Then, the transfer pattern is exposed to light using an exposure device having a Numerical Aperture (NA) of 0.08 to 0.20 and having an exposure light source including an i-line, an h-line, and a g-line, to form a hole pattern having a diameter W2 of 0.6 μm to 3.0 μm on the transfer object. The exposure is generally advantageously performed using an equivalent exposure.
The photomask of the present invention can be used as an exposure apparatus for performing an equivalent projection exposure to an exposure apparatus used for transferring a pattern for transfer, and the following apparatus can be mentioned. That is, the exposure apparatus used as an LCD (or an FPD or a liquid crystal) is configured such that the Numerical Aperture (NA) of an optical system is 0.08 to 0.15 (the coherence factor (σ) is 0.4 to 0.9), and the exposure apparatus includes a light source (also referred to as a wide wavelength source) for exposure light including at least one of an i line, an h line, and a g line. Of course, the present invention can be applied to an exposure apparatus having a numerical aperture NA of 0.10 to 0.20 to obtain the effects of the present invention.
Further, although the light source of the exposure apparatus used may use deformed illumination (ring belt illumination or the like), the excellent effect of the invention can be obtained even in non-deformed illumination.
The present invention includes a photomask blank for manufacturing the photomask of the present invention described above. Specifically, the photomask blank of the present invention is formed by laminating a semi-transmissive film and a low-transmissive film on a transparent substrate. And a resist film may also be coated.
The physical properties, film quality, and composition of the semi-transparent film and the low-transparent film are as described above.
That is, the semi-transparent film of the photomask blank of the present invention has a transmittance T1 of 30 to 80 (%) with respect to a representative wavelength in the wavelength range of i-line to g-line. The semi-transparent film has a refractive index of 1.5 to 2.9 with respect to the representative wavelength and a film thickness of approximately 180 degrees in phase shift. The semi-transparent film having such a refractive index has a desired phase shift even when the film thickness is extremely small, and thus the wet etching time of the semi-transparent film can be shortened. As a result, side etching of the semi-transparent film can be suppressed.
The low-transmittance film of the photomask blank of the present invention has a smaller transmittance with respect to the representative wavelength than the semi-transmissive film. The low-transmittance film is substantially impermeable to light of the representative wavelength, or has a transmittance of less than 30% and a phase shift of approximately 180 degrees.
[ example ]
The transfer performance of the 3 types of photomasks shown in FIG. 4 (comparative examples 1-1, 1-2 and example 1) was compared by optical simulation and evaluated. That is, after the exposure conditions were set in common for 3 photomasks having a pattern for transfer for forming a hole pattern having a diameter of 2.0 μm on the transfer object, optical simulations were performed for showing what transfer performance was.
Comparative example 1-1
As shown in fig. 4, the photomask of comparative example 1-1 has a pattern of a so-called binary mask composed of a light-shielding film pattern formed on a transparent substrate. In the photomask of comparative example 1-1, the main pattern constituted by the light-transmitting portion exposing the transparent substrate was surrounded by the light-shielding portion. The diameter W1 (one side of the square) of the main pattern was 2.0 (μm).
Comparative examples 1 to 2
As shown in fig. 4, the photomask of comparative example 1-2 was formed by patterning a semi-transparent film having a light transmittance (for h-line) of 5% and a phase shift of 180 degrees, and was a halftone phase shift mask having a main pattern composed of a quadrangular light transmitting portion having one side (diameter) (i.e., W1) of 2.0 (μm).
Example 1
As shown in fig. 4, the photomask of example 1 has the pattern for transfer according to the present invention. Here, the main pattern is a square having one side (diameter) (i.e., W1) of 2.0 (μm), the auxiliary pattern is an octagonal band having a width d of 1.3 (μm), and the distance between the center of the main pattern and the center of the width of the auxiliary pattern, i.e., the pitch P, is 4 (μm).
The auxiliary pattern is formed by forming a semi-transparent film on a transparent substrate. The semi-transmissive film had a transmittance T1 of 70 (%) for exposure light (for h-line) and a phase shift of 180 degrees. The low light transmission portion surrounding the main pattern and the auxiliary pattern is substantially constituted by a light shielding film (OD > 2) that does not transmit exposure light.
For any of the photomasks of examples 1-1, 1-2 and example 1, a hole pattern having a diameter W2 of 2.0 μm (w1=w2. That is, a diameter W2 formed on the transferred body is the same as a diameter W1 of a main pattern of a transfer pattern having a photomask) was formed on the transferred body. The exposure conditions used in the simulation are as follows. That is, exposure light has a wide wavelength range including i line, h line, and g line, and the intensity ratio is g:h:i=1:0.8:1.
The NA of the optical system of the exposure apparatus was 0.1, and the coherence factor σ was 0.5. The film thickness of the positive photoresist layer formed on the transferred body to obtain the cross-sectional shape of the resist pattern was 1.5. Mu.m.
Under the above conditions, performance evaluation of each transfer pattern is shown in fig. 4. The aerial image of the light intensity formed on the transferred body and the cross-sectional shape of the formed resist pattern are shown in fig. 5.
(optical evaluation of photomask)
For example, in the case of a minute light transmission pattern having a small transfer diameter, the light for exposure after passing through the photomask needs to have a good profile of a light transmission intensity curve, which is an aerial image formed on the transfer object. Specifically, it is important that the inclination of the peak of the transmitted light intensity is steep and rises nearly vertically, the absolute value of the light intensity of the peak is high (in the case where a sub-peak is formed around, the intensity is sufficiently high), and the like.
Further, the following index can be used for quantitatively evaluating a photomask based on optical performance.
(1) Depth of focus (DOF)
The focus depth is set to a size within + -10% of the target CD. If the DOF is high, the influence of flatness of a transfer object (for example, a panel substrate for a display device) is less likely to occur, and a minute pattern can be reliably formed, thereby suppressing the CD variation.
( 2) MEEF (Mask Error Enhancement Factor: mask error enhancement factor )
The value is a value indicating the ratio of Mask CD error to CD error of a pattern formed on a transfer object, and the lower MEEF is, the lower the CD error of the pattern formed on the transfer object can be reduced.
(3)Eop
In particular, in a photomask for manufacturing a display device, there is Eop in an important evaluation item. Which is the amount of exposure light necessary to form the pattern size to be obtained on the transfer object. In the manufacture of a display device, since the photomask has a large size (for example, a square or rectangle having one side of the main surface of about 300 to 1400 mm), when a photomask having a low Eop value is used, the scanning exposure speed can be increased, and the production efficiency can be improved.
In summary, when evaluating the performance of each sample to be simulated, as shown in fig. 4, the photomask of example 1 has a depth of focus (DOF) that is increased to 55 μm or more, which is a very excellent point compared to the comparative example, indicating stable transferability of the pattern. This also means that the value of MEEF is small and the CD precision of the tiny pattern is high.
Furthermore, the value of Eop for the photomask of example 1 is very small. This represents the following advantages: in the case of the photomask of embodiment 1, the exposure time is not increased or can be shortened even for the manufacture of a large-area display device.
Further, when referring to the aerial image of the transmitted light intensity shown in fig. 5, it is understood that in the case of the photomask of example 1, the peak value of the main pattern portion can be raised with respect to the level (Eth) which becomes the threshold value of the resist light sensitivity, and the inclination of the peak value is sufficiently raised (nearly perpendicular to the surface of the transfer object). In this respect, the composition was superior to comparative examples 1-1 and 1-2. Here, the increase in Eop and the decrease in MEEF are achieved by using light transmitted through the auxiliary pattern for the light intensity enhancement at the main pattern position. In the photomask of example 1, side peaks were generated on both sides of the position of the transferred image of the main pattern, but the side peaks were not more than Eth, so that the side peaks had no influence on the transfer of the main pattern.
The method of reducing the loss of the resist residue due to the side peak will be described below.
The design of the transfer pattern formed on the photomask was changed, and the samples of comparative example 2-1, comparative example 2-2, and example 2 shown in fig. 6 were used for simulation. Here, the difference from the above-described samples (comparative example 1-1, comparative example 1-2, and example 1) was that the diameter W1 of the main pattern of each sample was set to 2.5 (μm).
Comparative example 2-1
As shown in fig. 6, the photomask of comparative example 2-1 is a pattern of a so-called binary mask composed of a light-shielding 25 film pattern formed on a transparent substrate. In the photomask of comparative example 2-1, the main pattern constituted by the light-transmitting portion exposing the transparent substrate was surrounded by the light-shielding portion. The diameter W1 (one side of the square) of the main pattern was 2.5 (μm).
Comparative examples 2-2
As shown in fig. 6, the photomask of comparative example 2-1 is a halftone phase shift mask, which is formed by patterning a semi-transparent film having a light transmittance for exposure (for h-line) of 5% and a phase shift of 180 degrees, and has a main pattern composed of a quadrangular light transmitting portion having a main pattern diameter W1 (one side of square) of 2.5 (μm).
Example 2
As shown in fig. 6, the photomask of example 2 is a pattern for transfer according to the present invention. The main pattern of the photomask of example 2 was a square having a diameter W1 (one side of the square) of 2.5 (μm) of the main pattern, the auxiliary pattern was an octagonal band having a width d of 1.3 (μm), and the distance P between the center of the main pattern and the center of the width of the auxiliary pattern was 4 (μm).
Using the photomasks of comparative example 2-1, comparative example 2-2 and example 2, a hole pattern having a diameter of 2.0 μm was formed in the transfer target. That is, the mask bias (β=w1-W2) of these photomasks was set to 0.5 (μm). The exposure conditions used in the simulation were the same as those of the photomasks of comparative examples 1-1, 1-2 and example 1 described above.
As can be understood from the data shown in fig. 6, in the case of using the photomask of example 2, excellent DOF, MEEF, and advantageous properties compared with comparative examples 2-1, 2-2 are shown. In the photomask of example 2, in particular, DOF was a value exceeding 35 μm.
Further, as shown in fig. 7, when the aerial image of the transmitted light intensity and the cross-sectional shape of the resist pattern on the transfer object are referred to, the characteristics possessed by the sample of example 2 become further clear. As shown in fig. 7, when the photomask of example 2 was used, the peak corresponding to the main pattern was very much higher than the side peaks formed on both sides, and no resist damage was substantially generated.
From the above results, it is clear that in the case of pattern transfer using the photomask of the present invention, the pattern for transfer having a mask bias β of about 0.5 (μm), specifically, in the range of 0.2 to 1.0 (μm) is more easily used for practical use, and an excellent transferred image can be obtained.
From the above description, the excellent performance of the photomask of the present invention was confirmed. In particular, when the photomask of the present invention is used, a value having an MEEF of 2.5 or less can be obtained in a minute pattern of 2 μm or less, which is significant for the production of a display device in the future.
The use of the photomask of the present invention is not particularly limited. The photomask of the present invention is preferably used in manufacturing a display device including a liquid crystal display device and an EL display device.
According to the photomask of the present invention, the zero order light can be reduced and the proportion of ±1 order light can be relatively increased at the time of exposure by controlling the mutual interference of exposure light transmitted through both the main pattern and the auxiliary pattern. Therefore, the aerial image of the transmitted light can be greatly improved.
As a use for which such an operation effect can be advantageously obtained, it is advantageous to use the photomask of the present invention in order to form an independent hole pattern such as a contact hole for a liquid crystal or an EL device in many cases. The pattern types are generally referred to as Dense patterns in which a plurality of patterns are arranged with a certain regularity so as to optically affect each other, and independent patterns in which such regular arrangement patterns do not exist in the surroundings. The photomask of the present invention is suitably applied to a case where an independent pattern is to be formed on a transferred body.
The photomask of the present invention may use an additional optical film or functional film within a range that does not impair the effects of the present invention. For example, in order to prevent a defect that the light transmittance of the low light transmittance film hinders the inspection and the position detection of the photomask, a light shielding film may be formed in a region other than the pattern for transfer. In addition, the semi-transmissive film may be provided with an anti-reflection layer on its surface for reducing reflection of drawing light and exposure light. The semi-transmissive film may have a low reflection layer on the transparent substrate side 15 for suppressing back reflection.
Claims (14)
1. A photomask for manufacturing a display device, comprising a transfer pattern formed by patterning a semi-transparent film and a light shielding film formed on a transparent substrate, characterized in that,
for performing exposure using an exposure device having an optical system with a numerical aperture NA of 0.08 to 0.20, thereby forming an independent hole pattern on a transferred body,
the semi-transparent film shifts light of a representative wavelength of exposure light including i-line, h-line or g-line by 150-210 degrees and has a transmittance T1 relative to the representative wavelength,
Wherein, the unit of T1 is,
the semi-transparent film has a refractive index of 1.5 to 2.9 with respect to the representative wavelength,
the semi-transparent film is made of a material containing any one of Zr, nb, hf, ta, mo, ti and Si, nitrogen, or oxynitride,
the light shielding film has an optical density OD of 3 or more with respect to the light of the representative wavelength,
the transfer pattern includes:
a main pattern formed of a light-transmitting portion exposing the transparent substrate and having a diameter W1;
an auxiliary pattern which is arranged in the vicinity of the main pattern, is formed of a semi-transparent portion in which the semi-transparent film is formed on the transparent substrate, and has a width d; and
a light shielding portion which is disposed in a region of the transfer pattern other than the main pattern and the auxiliary pattern, and in which at least the light shielding film is formed on the transparent substrate,
the auxiliary pattern has a shape of a regular polygonal band or a circular band, and surrounds the circumference of the main pattern,
wherein, when W1 and d are in μm,
satisfies the following formulas (1-1), (2) and (5),
0.8≤W1≤3.0···(1-1)
30≤T1≤80···(5)。
2. the photomask of claim 1 wherein the photomask is used in a photomask,
The width d of the auxiliary pattern satisfies d.ltoreq.W1.
3. A photomask according to claim 1 or 2, wherein,
the transfer pattern corresponds to the main pattern, and a hole pattern having a diameter W2 is formed in the transfer object, wherein W1 > W2.
4. A photomask as recited in claim 3, wherein,
when the difference between the diameter W1 of the main pattern and the diameter W2 on the transferred body, that is, W1-W2, is set to be offset β, where β has a unit of μm, 0.2.ltoreq.β.ltoreq.1.0.
5. A photomask according to claim 1 or 2, wherein,
the transparent part exposes the transparent substrate,
the semi-transparent portion is formed by forming the semi-transparent film on the transparent substrate,
the light shielding portion is formed by laminating the semi-transmissive film and the light shielding film on the transparent substrate.
6. The photomask of claim 1 wherein the photomask is used in a photomask,
when the distance between the center of the main pattern and the center of the auxiliary pattern in the width direction is P, where P is given in μm,
satisfies the following formula (6),
1.0<P≤5.0···(6)。
7. a photomask according to claim 1 or 2, wherein,
the depth of focus is enlarged.
8. A method for manufacturing a photomask for manufacturing a display device, the photomask comprising a pattern for transfer which is formed on a transparent substrate and is used for forming an independent hole pattern on a transfer object by exposure using an exposure device having an optical system with a numerical aperture NA of 0.08-0.20,
the method for manufacturing the photomask is characterized by comprising the following steps:
preparing a photomask blank in which a semi-transparent film and a light shielding film are laminated on the transparent substrate to form a first photoresist film;
a step of forming a first resist pattern by performing first drawing on the first photoresist film based on the predetermined transfer pattern and developing the first resist pattern;
a step of forming a light shielding film pattern by wet etching the light shielding film using the first resist pattern as a mask;
a step of removing the first resist pattern and forming a second photoresist film on the entire surface including the light shielding film pattern;
a step of forming a second resist pattern by developing the second photoresist film by performing a second drawing; and
a step of wet etching the semi-transmissive film using the second resist pattern and the light shielding film pattern as a mask,
The semi-transparent film shifts light of a representative wavelength of exposure light including i-line, h-line or g-line by 150-210 degrees and has a transmittance T1 relative to the representative wavelength,
wherein, the unit of T1 is,
the semi-transparent film has a refractive index of 1.5 to 2.9 with respect to the representative wavelength,
the semi-transparent film is made of a material containing any one of Zr, nb, hf, ta, mo, ti and Si, nitrogen, or oxynitride,
the light shielding film has an optical density OD of 3 or more with respect to the light of the representative wavelength,
the transfer pattern includes:
a main pattern formed of a light-transmitting portion exposing the transparent substrate and having a diameter W1;
an auxiliary pattern which is arranged in the vicinity of the main pattern, is composed of a semi-transmissive portion in which the semi-transmissive film is formed on the transparent substrate, and has a width d; and
a light shielding portion which is disposed in a region of the transfer pattern other than the main pattern and the auxiliary pattern, and in which at least the light shielding film is formed on the transparent substrate,
the auxiliary pattern has a shape of a regular polygonal band or a circular band, and surrounds the circumference of the main pattern,
Wherein, when W1 and d are in μm,
satisfies the following formulas (1-1), (2) and (5),
0.8≤W1≤3.0···(1-1)
30≤T1≤80···(5)。
9. the method of manufacturing a photomask according to claim 8, wherein,
when the distance between the center of the main pattern and the center of the auxiliary pattern in the width direction is P, where P is given in μm,
satisfies the following formula (6),
1.0<P≤5.0···(6)。
10. a method of manufacturing a display device, comprising:
preparing the photomask according to claim 1 or 2; and
a step of exposing the transfer pattern with an exposure device having a numerical aperture NA of 0.08 to 0.20 and an exposure light source including an i-line, an h-line or a g-line, thereby forming a hole pattern having a diameter W2 on the transfer object,
wherein when the unit of W2 is μm, W2 is in the range of 0.6 μm to 3.0. Mu.m.
11. The method of manufacturing a display device according to claim 10, wherein,
the exposure using the photomask expands the depth of focus.
12. The method of manufacturing a display device according to claim 10, wherein,
the exposure using the photomask reduces a mask error enhancement factor.
13. A photomask for manufacturing a display device, comprising a transfer pattern formed by patterning a semi-transparent film and a light shielding film formed on a transparent substrate, characterized in that,
For performing exposure using an exposure device having an optical system with a numerical aperture NA of 0.08 to 0.20, thereby forming an independent hole pattern on a transferred body,
the semi-transparent film shifts light of a representative wavelength of exposure light including i-line, h-line or g-line by 150-210 degrees and has a transmittance T1 relative to the representative wavelength,
wherein, T1 is 30-80%, the unit is,
the semi-transparent film has a refractive index of 1.5 to 2.9 with respect to the representative wavelength,
the light shielding film has an optical density OD of 3 or more with respect to the light of the representative wavelength,
the transmittance T3 of the light shielding film with respect to the representative wavelength is smaller than the transmittance T1 of the semi-transparent film,
both the semi-transmissive film and the light shielding film can be wet etched,
the light shielding film is made of a material having etching selectivity with respect to the material of the semi-transmissive film,
the transfer pattern includes:
a main pattern formed of a light-transmitting portion exposing the transparent substrate and having a diameter W1;
an auxiliary pattern which is arranged in the vicinity of the main pattern, is formed of a semi-transparent portion in which the semi-transparent film is formed on the transparent substrate, and has a width d; and
A light shielding portion which is disposed in a region of the transfer pattern other than the main pattern and the auxiliary pattern, and in which at least the light shielding film is formed on the transparent substrate,
the auxiliary pattern has a shape of a regular polygonal band or a circular band, and surrounds the circumference of the main pattern,
wherein, when W1 and d are in μm,
satisfies the following formulas (1-1), (2) and (5),
0.8≤W1≤3.0 ···(1-1)
30≤T1≤80 ···(5)。
14. the photomask of claim 13 wherein the photomask is used in a photomask,
the light shielding film is Cr or an oxide, nitride, carbide, oxynitride or oxynitrided carbide thereof.
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| JP2014146847A JP6581759B2 (en) | 2014-07-17 | 2014-07-17 | Photomask, photomask manufacturing method, photomask blank, and display device manufacturing method |
| CN201910982223.5A CN110673436B (en) | 2014-07-17 | 2015-07-16 | Photomask, method for manufacturing photomask, and method for manufacturing display device |
| CN201510418721.9A CN105319831B (en) | 2014-07-17 | 2015-07-16 | The manufacturing method of photomask, the manufacturing method of photomask and display device |
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| JP6808665B2 (en) * | 2017-03-10 | 2021-01-06 | Hoya株式会社 | Photomask for manufacturing display devices and manufacturing method for display devices |
| JP7080070B2 (en) * | 2017-03-24 | 2022-06-03 | Hoya株式会社 | Manufacturing method of photomask and display device |
| JP6964029B2 (en) * | 2017-06-06 | 2021-11-10 | Hoya株式会社 | Manufacturing method of photomask and display device |
| TWI659262B (en) | 2017-08-07 | 2019-05-11 | 日商Ｈｏｙａ股份有限公司 | Method of repairing a photomask, method of manufacturing a photomask, photomask and method of manufacturing a display device |
| TWI742885B (en) * | 2017-09-12 | 2021-10-11 | 日商Ｈｏｙａ股份有限公司 | Photomask and method of manufacturing a display device |
| JP7261709B2 (en) * | 2019-09-13 | 2023-04-20 | Hoya株式会社 | Photomask, photomask manufacturing method, and display device manufacturing method |
| JP7383490B2 (en) * | 2020-01-07 | 2023-11-20 | 株式会社エスケーエレクトロニクス | photo mask |
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| TW201604643A (en) | 2016-02-01 |
| KR20200120599A (en) | 2020-10-21 |
| TWI690770B (en) | 2020-04-11 |
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| JP6581759B2 (en) | 2019-09-25 |
| KR102195658B1 (en) | 2020-12-28 |
| KR101837247B1 (en) | 2018-03-09 |
| TW201921091A (en) | 2019-06-01 |
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| CN110673436A (en) | 2020-01-10 |
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| KR102168149B1 (en) | 2020-10-20 |
| KR20170117987A (en) | 2017-10-24 |
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| TW201816503A (en) | 2018-05-01 |
| TWI651585B (en) | 2019-02-21 |
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