CN115528154A - Flip-chip light emitting diode and light emitting device - Google Patents

Abstract

The application discloses a flip-chip light emitting diode and a light emitting device, wherein the flip-chip light emitting diode comprises a substrate and a semiconductor light emitting unit positioned on the substrate; the semiconductor island structure is positioned on the substrate, and a gap is formed between the semiconductor island structure and the semiconductor light-emitting unit; when the flip-chip light emitting diode is in a power-on state, the semiconductor island structure does not emit light. The semiconductor light emitting diode is provided with a semiconductor island structure, a gap exists between the semiconductor island structure and a semiconductor light emitting unit, and the semiconductor island structure is not used for conducting and emitting light of a flip light emitting diode; the region of the semiconductor island structure is used as the action region of the thimble, and when the thimble acts on the region, the thimble can be prevented from puncturing or bursting the protective layer at the semiconductor light-emitting unit, so that the phenomenon of leakage failure of the flip-chip light-emitting diode is avoided, and the reliability of the flip-chip light-emitting diode is improved.

Description

Flip-chip light-emitting diodes and light-emitting devices

technical field

The present application relates to the technical field related to semiconductors, in particular to a flip-chip light-emitting diode and a light-emitting device.

Background technique

Due to the characteristics of high luminous efficiency, energy saving, environmental protection, and long life, flip-chip light-emitting diodes are widely used in various fields, such as lighting and backlighting. When encapsulating the existing flip-chip LEDs, it is necessary to use thimbles to act on a certain area on the front of the flip-chip LEDs to lift it up and carry out crystal bonding. The active area of the thimbles is usually the central area of the front of the flip-chip LEDs . The front side of a flip-chip light-emitting diode includes an epitaxial structure, a transparent conductive layer, electrodes, and a protective layer and pads for protecting the epitaxial structure, transparent conductive layer, and electrodes. The protective layer is usually made of silicon oxide material, or is made of oxide A distributed Bragg reflector formed by the combination of silicon and titanium oxide. Due to the brittleness of the protective layer, when the thimble acts on the front of the flip-chip LED, the thimble is easy to pierce or break the protective layer, exposing the underlying epitaxial structure, transparent conductive layer or electrode, resulting in leakage failure of the flip-chip LED, and Affect the reliability of flip-chip light-emitting diodes.

Contents of the invention

The purpose of this application is to provide a flip-chip light-emitting diode, which is provided with a semiconductor island structure spaced apart from the semiconductor light-emitting unit. The area where the semiconductor island structure is located serves as the active area of the thimble, which can prevent the thimble from piercing or breaking the semiconductor light-emitting unit. The protection layer of the flip-chip light-emitting diode is avoided, and the leakage failure phenomenon of the flip-chip light-emitting diode is avoided, and the reliability of the flip-chip light-emitting diode is improved.

Another object is to provide a light-emitting device, which includes the above-mentioned flip-chip light-emitting diode.

In a first aspect, the present application provides a flip-chip light-emitting diode, which includes:

Substrate;

At least one semiconductor light emitting unit is located on the substrate;

The semiconductor island structure is located on the substrate, and there is a gap between it and the semiconductor light-emitting unit; when the flip-chip light-emitting diode is in a power-on state, the semiconductor island structure does not emit light.

In a possible implementation, the semiconductor island structure is located in the central region of the flip-chip light emitting diode.

In a possible embodiment, the width of the upper surface of the semiconductor island structure is at least 30 μm.

In a possible implementation, the shape of the upper surface of the semiconductor island structure is circular or polygonal.

In a possible implementation, the height of the semiconductor island structure is less than or equal to the height of the semiconductor light emitting unit.

In a possible implementation, the flip-chip light emitting diode further includes a metal block, and the metal block is located above the semiconductor island structure.

In a possible implementation, the metal block is directly in contact with the upper surface of the semiconductor island structure.

In a possible implementation, the thickness of the metal block is between 0.5 μm and 10 μm.

In a possible implementation, the flip-chip light emitting diode further includes a protective layer, and the protective layer covers at least the upper surface and the sidewall of the semiconductor island structure.

In a possible implementation, the protection layer is located between the metal block and the semiconductor island structure, or the protection layer is located above the metal block.

In a possible implementation, the flip-chip light emitting diode further includes a first bonding pad and a second bonding pad;

The area covered by the protective layer also includes the upper surface and side walls of the semiconductor light emitting unit; the semiconductor light emitting unit includes a first semiconductor layer, an active layer and a second semiconductor layer;

The first welding pad is located on the protection layer, and is electrically connected to the first semiconductor layer in the semiconductor light emitting unit through the protection layer, and the second welding pad is located on the protection layer, and is connected to the second semiconductor light emitting unit in the semiconductor light emitting unit through the protection layer. The semiconductor layers are electrically connected.

In a possible implementation, neither the first pad nor the second pad is above the metal block.

In a possible implementation, the number of semiconductor light emitting units is one.

In a possible implementation, the semiconductor light emitting unit surrounds the periphery of the semiconductor island structure.

In a possible implementation, the number of semiconductor light emitting units is multiple, and the multiple semiconductor light emitting units are arranged at intervals; the number of semiconductor light emitting units is an odd number or an even number.

In a possible implementation, the semiconductor island structure is located between adjacent semiconductor light emitting units.

In a possible implementation, the semiconductor island structure is located between adjacent semiconductor light-emitting units at the central region of the flip-chip light-emitting diode.

In a possible implementation, adjacent semiconductor light emitting units are electrically connected.

In a possible implementation, the width of the gap between the semiconductor island structure and the semiconductor light emitting unit increases from bottom to top.

In a second aspect, the present application provides a light-emitting device, which includes the above-mentioned flip-chip light-emitting diode.

Compared with the prior art, the present application has at least the following beneficial effects:

A semiconductor island structure is formed at the central area of the flip-chip light-emitting diode. There is a gap between the semiconductor island structure and the semiconductor light-emitting unit, and it is not used for conductive light emission of the flip-chip light-emitting diode; the area where the semiconductor island structure is located is used as the action area of the thimble. When the thimble acts on the above-mentioned area, the crack pierced or broken by the thimble only extends to the upper surface or around the side wall of the semiconductor island structure, which can prevent the crack from being directly transmitted to the protective layer at the semiconductor light-emitting unit to a certain extent. , so as to avoid the leakage failure phenomenon of the flip-chip light-emitting diode due to the protective layer at the semiconductor light-emitting unit being pierced or broken, and improve the reliability of the flip-chip light-emitting diode.

Description of drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the accompanying drawings used in the embodiments. It should be understood that the following drawings only show some embodiments of the present application, so It should be regarded as a limitation on the scope, and those skilled in the art can also obtain other related drawings based on these drawings without creative work.

FIG. 1 is a top view of a flip-chip light-emitting diode according to an embodiment of the present application;

Fig. 2 is a schematic cross-sectional view of A-A of Fig. 1 shown according to an embodiment of the present application;

Fig. 3 is a schematic cross-sectional view of A-A of Fig. 1 shown according to an embodiment of the present application;

Fig. 4 is a schematic cross-sectional view of A-A of Fig. 1 shown according to an embodiment of the present application;

Fig. 5 is a top view of a flip-chip light-emitting diode according to an embodiment of the present application;

Fig. 6 is a schematic cross-sectional view of A-A of Fig. 5 shown according to an embodiment of the present application;

Fig. 7 is a schematic cross-sectional view of A-A of Fig. 5 shown according to an embodiment of the present application;

FIG. 8 is a schematic cross-sectional view of A-A of FIG. 5 shown according to an embodiment of the present application;

Fig. 9 is a schematic cross-sectional view of B-B of Fig. 5 shown according to an embodiment of the present application;

10 to 12 are A-A schematic cross-sectional views of a flip-chip light-emitting diode at different manufacturing stages according to an embodiment of the present application.

Graphical description:

100 substrate; 200 semiconductor stacking layer; 201 first semiconductor layer; 202 active layer; 203 second semiconductor layer; 210 semiconductor light emitting unit; 220 semiconductor island structure; 230 groove; 500 first electrode; 510 second electrode; 520 interconnection electrode; 600 protective layer; 700 first pad; 710 second pad; 800 metal block.

detailed description

The implementation of the present application is described below through specific specific examples, and those skilled in the art can easily understand other advantages and effects of the present application from the content disclosed in this specification. The present application can also be implemented or operated through other different specific implementation modes, and various modifications or changes can be made to the details in the present application based on different viewpoints and applications without departing from the spirit of the present application.

In the description of the present application, it should be noted that the orientation or positional relationship indicated by the terms "upper", "lower", "left" and "right" are based on the orientation or positional relationship shown in the drawings, or the The usual orientation or positional relationship of the application product when used is only for the convenience of describing the application and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, therefore It should not be construed as a limitation of the application. In addition, the terms "first" and "second" etc. are only used for distinguishing descriptions, and should not be construed as indicating or implying relative importance.

According to one aspect of the present application, a flip-chip light emitting diode is provided. Referring to FIGS. 1 to 9 , the flip-chip light emitting diode includes a substrate 100 , a semiconductor light emitting unit 210 and a semiconductor island structure 220 formed on the substrate 100 . There is a gap between the semiconductor island structure 220 and the semiconductor light emitting unit 210 , and the semiconductor island structure 220 does not emit light when the flip-chip light emitting diode is in a energized state. The semiconductor island structure 220 is preferably disposed at the central area of the flip-chip LED, and the central area of the flip-chip LED refers to the central area of its plan view.

The protective layer 600 covers the upper surface and sidewalls of the semiconductor light emitting unit 210 , the upper surface and sidewalls of the semiconductor island structure 220 , and the gap between the semiconductor island structure 220 and the semiconductor light emitting unit 210 .

The front of the flip-chip LED faces the same direction as the upper surface of the substrate 100 , that is to say, a semiconductor island structure 220 is provided in the central area of the front of the flip-chip LED, and the semiconductor island structure 220 is independently provided with the semiconductor light-emitting unit 210 . The area where the semiconductor island structure 220 is located serves as the action area of the thimble. When the thimble acts on the above-mentioned area, the crack that the thimble pierces or breaks through the protective layer 600 is generated on the upper surface of the semiconductor island structure 220 or further extends to the surface of the semiconductor island structure 220. Around the sidewalls, the gap between the semiconductor light emitting unit 210 and the semiconductor island structure 220 can prevent cracks from passing to the protective layer 600 at the semiconductor light emitting unit 210 to a certain extent, thereby avoiding the protection of the flip-chip light emitting diode due to the semiconductor light emitting unit 210. Leakage failure occurs when the layer 600 is pierced or broken, which improves the reliability of the flip-chip LED. In addition, the semiconductor island structure 220 does not conduct electricity and emit light when the flip-chip LED is energized.

The specific implementation structure of the flip-chip light-emitting diode is taken as an example for illustration below:

Example 1

The present application provides a flip-chip light-emitting diode, FIG. 1 is a top view of the flip-chip light-emitting diode, and FIGS. 2 to 4 are schematic cross-sectional views along A-A of FIG. 1 .

The flip chip light emitting diode includes a substrate 100 , a semiconductor light emitting unit 210 and a semiconductor island structure 220 formed on the substrate 100 . The semiconductor island structure 220 is arranged in the central area of the flip-chip light emitting diode, and the semiconductor light emitting unit 210 is ring-shaped and surrounds the periphery of the semiconductor island structure 220; the semiconductor island structure 220 and the semiconductor light emitting unit 210 are located on the substrate 100 independently of each other, And there is a gap between the two, and there is no semiconductor layer or conductive layer connecting the two. When the flip-chip LED is powered on, the semiconductor island structure 220 does not emit light. Here, the central area of the flip-chip LED refers to the central area of its top view.

The protective layer 600 covers the upper surface and sidewalls of the semiconductor light emitting unit 210 , the upper surface and sidewalls of the semiconductor island structure 220 , and the gap between the semiconductor island structure 220 and the semiconductor light emitting unit 210 .

Both the first pad 700 and the second pad 710 are located on the protection layer 600 , and are electrically connected to the semiconductor light emitting unit 210 through the protection layer 600 .

When the flip-chip LED is mounted on the application substrate, the first pad 700 and the second pad 710 can be connected to the electrodes on the application substrate through a reflow soldering process or hot pressing process. There may be a connection layer containing tin components between the first pad 700 , the second pad 710 and the electrodes on the application substrate, and the connection layer containing tin may be solder paste. A connection layer containing tin may be disposed on the first pad 700 or the second pad 710 , thereby avoiding the use of solder paste.

The first pad 700 and the second pad 710 may include an adhesion layer, a reflective layer, a barrier layer, and a gold layer. Wherein, the adhesion layer is a titanium layer or a chromium layer; the reflective layer is an aluminum layer; the barrier layer is a nickel layer, or a repeated stack of a nickel layer and a platinum layer. The barrier layer mentioned above can be used to prevent the tin-containing connection layer from penetrating into the inside of the flip-chip LED. Preferably, the first pad 700 and the second pad 710 further include a thick tin layer on the gold layer.

From the top view of the flip-chip LED shown in FIG. 1 , the semiconductor island structure 220 is located between the first bonding pad 700 and the second bonding pad 710 . From the A-A cross-sectional schematic view of the flip-chip light emitting diode shown in FIG. 2 , neither the first bonding pad 700 nor the second bonding pad 710 is located above the semiconductor island structure 220 .

When the thimble of the transfer device acts on the flip-chip light-emitting diode supported by flexible materials such as blue film to transfer it to other devices or substrates, such as the application substrate, the thimble will act on the first pad 700 and the second pad 700. The surface above the semiconductor island structure 220 between the pads 710 is on the surface of the protection layer 600 . The area where the semiconductor island structure 220 is located is used as the action area of the thimble. When the thimble acts on the above-mentioned area, the crack that the thimble pierces or breaks through the protective layer 600 is generated on the upper surface of the semiconductor island structure 220 or further extends to its sidewalls. The gap between the semiconductor light emitting unit 210 and the semiconductor island structure 220 can prevent cracks from passing to the protective layer 600 at the semiconductor light emitting unit 210 to a certain extent, thereby preventing the flip-chip light emitting diode from being pierced by the protective layer 600 at the semiconductor light emitting unit 210 The leakage failure phenomenon caused by breakage or bursting improves the reliability of flip-chip light-emitting diodes. In addition, the semiconductor island structure 220 does not conduct electricity and emit light when the flip-chip LED is energized.

Preferably, the width W1 _of the gap between the semiconductor island structure 220 and the semiconductor light emitting unit 210 increases from bottom to top. The width W ₁ of the gap at the bottom is 3 μm or more.

In one embodiment, the material composition of the stacked material layers of the semiconductor island structure 220 and the thickness of each layer are consistent with the semiconductor light emitting unit 210 . The thickness of the semiconductor light emitting unit 210 is 3-10 μm.

Referring to FIG. 2 to FIG. 4 , the semiconductor light emitting unit 210 includes a first semiconductor stack layer, and the semiconductor island structure 220 includes a second semiconductor stack layer. The height of the semiconductor island structure 220 is less than or equal to the height of the semiconductor light emitting unit 210, and the height of the semiconductor island structure 220 is preferably less than or equal to the height of the first semiconductor stack layer. Both the first semiconductor stack layer and the second semiconductor stack layer include a first semiconductor layer 201, an active layer 202 and a second semiconductor layer 203; the first semiconductor layer 201 is an N-type semiconductor layer, and the active layer 202 is a multilayer quantum The well layer can provide blue, green or red radiation, and can also provide ultraviolet or infrared radiation. The second semiconductor layer 203 is a P-type semiconductor layer. The N-type semiconductor layer, the multi-layer quantum well layer, and the P-type semiconductor layer are only the basic constituent units of the first semiconductor stack layer. Functional structural layer of the role.

In order to obtain the semiconductor light emitting unit 210 and the semiconductor island structure 220, the semiconductor stack layer 200 can be obtained first on the substrate 100, and then the semiconductor stack layer 200 is etched from the surface of the semiconductor stack layer 200 to the surface of the substrate 100 through a vertical etching process to form Independent semiconductor light emitting unit 210 and semiconductor island structure 220 . Preferably, part of the semiconductor material layer on the semiconductor island structure 220 is further etched to make the height of the semiconductor island structure 220 smaller than the height of the semiconductor light emitting unit 210 .

The shape of the upper surface of the semiconductor island structure 220 includes, but is not limited to, circular or polygonal, and the width of the upper surface of the semiconductor island structure 220 is at least 30 μm. Preferably, the width of the upper surface of the semiconductor island structure 220 is implemented according to the size of the current thimble , the width of the upper surface of the semiconductor island structure 220 is at least 50 μm. In this embodiment, both the upper surface and the lower surface of the semiconductor island structure 220 are circular, and the diameter of the upper surface of the semiconductor island structure 220 is smaller than the diameter of the lower surface of the semiconductor island structure 220 .

In one embodiment, the flip-chip light emitting diode may further include a metal block 800 , and the metal block 800 is located above the semiconductor island structure 220 . The metal block 800 has a certain degree of ductility, which can buffer the force of the thimble to a certain extent. The thickness of the metal block 800 is between 0.5-10 μm, and the thickness of the metal block 800 is preferably 1-3 μm. In this embodiment, the preparation materials of the metal block 800 include but are not limited to Au, Ti, Al, Cr, Pt, TiW alloy or any combination of Ni.

Referring to FIG. 3 , the metal block 800 directly contacts the upper surface of the semiconductor island structure 220 , and the protection layer 600 is located above the metal block 800 . Specifically, the metal block 800 covers the upper surface of the semiconductor island structure 220 , or, the metal block 800 covers the upper surface and at least part of the sidewall of the semiconductor island structure 220 .

Alternatively, referring to FIG. 4 , the metal block 800 is located on the upper surface of the protective layer 600 and above the semiconductor island structure 220 , that is to say, the protective layer 600 is located between the metal block 800 and the semiconductor island structure 220 . Preferably, the material and thickness of the metal block 800 are the same as those of the first pad 700 and the second pad 710, and the metal block 800 is located between the first pad 700 and the second pad 710, and is connected to the first pad 700. A certain distance is maintained between the second pad 710 and the second pad 710 . The width of the metal block 800 is smaller than or equal to the width of the semiconductor island structure 220 .

It should be noted that the design of the semiconductor island structure 220 can prevent the protection layer 600 at the semiconductor light emitting unit 210 from cracking to a certain extent, and the metal block 800 is not necessarily provided.

In one embodiment, the substrate 100 is a transparent substrate, such as a sapphire substrate. The upper surface of the substrate 100 may be provided with a sapphire pattern, or the upper surface of the substrate 100 may be provided with a pattern of a foreign material, such as silicon oxide. The height of the above graphics may be 1-3 μm, and the width may be 1-4 μm. The substrate 100 also includes an upper surface, a lower surface and a side surface, and the light radiated by the active layer 202 can radiate light from the side surface and the upper surface of the substrate 100 . The thickness of the substrate 100 is preferably more than 60 μm, such as 80 μm, 120 μm, 150 μm or 250 μm.

In one embodiment, referring to FIGS. 1 to 4 , the first semiconductor stack layer has a mesa exposing part of the first semiconductor layer 201 , and the first electrode 500 is formed on the mesa.

The semiconductor light emitting unit 210 further includes a transparent conductive layer 400 on the second semiconductor layer 203 , which includes but not limited to an ITO layer. The transparent conductive layer 400 includes an opening, and the opening exposes a portion of the second semiconductor layer 203 . The second electrode 510 is formed on the transparent conductive layer 400 and contacts the second semiconductor layer 203 through the opening.

The second electrode 510 includes a block portion and at least one strip portion extending from the block portion. The second electrode 510 includes a block portion or a strip portion passing through the opening in the transparent conductive layer 400 and the second semiconductor layer 203. contacts to improve the adhesion of the second electrode 510 .

The width of the opening located under the strip portion in the second electrode 510 is larger than the width of the strip portion in the second electrode 510 . The width of the opening below the bulk portion in the second electrode 510 is smaller than the width of the bulk portion in the second electrode 510 , so that the edge of the bulk portion is located on the upper surface of the transparent conductive layer 400 .

The first electrode 500 and the second electrode 510 may include an adhesion layer, a reflection layer and a barrier layer, wherein the adhesion layer is a chromium layer or a titanium layer, the reflection layer is an aluminum layer, and the barrier layer is a repeated stack of titanium layers and platinum layers. .

The protective layer 600 is respectively provided with through holes located above the first electrode 500 and the second electrode 510, and the first pad 700 and the second pad 710 are located on the protective layer 600, and are connected to the first electrode 500, The second electrode 510 is connected. Neither the first pad 700 nor the second pad 710 is above the metal block 800 .

The protective layer 600 includes, but is not limited to, a distributed Bragg reflector or a single-layer insulating layer. In this embodiment, the material of the protective layer 600 is SiO ₂ , TiO ₂ , ZnO ₂ , ZrO ₂ , Cu ₂ O ₃ and other materials. At least two of them, which are specifically distributed Bragg reflectors made by alternately stacking two materials into multiple layers using techniques such as electron beam evaporation or ion beam sputtering.

Example 2

The present application provides a flip-chip light-emitting diode, specifically a high-voltage flip-chip light-emitting diode. FIG. 5 is a top view of the flip-chip light-emitting diode, FIGS. 6 to 8 are schematic cross-sectional views of A-A in FIG. 5 , and FIG. 9 is a schematic cross-sectional view of B-B in FIG. 5 .

The flip chip light emitting diode includes a substrate 100 , a plurality of semiconductor light emitting units 210 and a semiconductor island structure 220 formed on the substrate 100 . A plurality of semiconductor light emitting units 210 are arranged in a predetermined direction and arranged at intervals, and adjacent semiconductor light emitting units 210 are electrically connected. The semiconductor island structure 220 is located between the adjacent semiconductor light emitting units 210 at the central area of the flip-chip light emitting diode, and there is a gap between the adjacent semiconductor light emitting units 210, where the central area of the flip-chip light emitting diode refers to The central area of its top view. The number of semiconductor light emitting units 210 is odd or even, and the number of semiconductor light emitting units 210 is preferably even.

The protection layer 600 covers the upper surface and sidewalls of each semiconductor light emitting unit 210 , the upper surface and sidewalls of the semiconductor island structure 220 , and the gap between the semiconductor island structure 220 and the semiconductor light emitting unit 210 .

The first pad 700 is located on the protection layer 600 and is electrically connected to the semiconductor light emitting unit 210 at the head end through the protection layer 600 , and the second pad 710 is located on the protection layer 600 and passes through the protection layer 600 and the semiconductor light emitting unit 210 at the tail end. electrical connection.

Preferably, the width W1 _of the gap between the semiconductor island structure 220 and its adjacent semiconductor light emitting unit 210 increases from bottom to top. The width W ₁ of the gap at the bottom is 3 μm or more.

In one embodiment, the material composition of the stacked material layers of the semiconductor island structure 220 and the thickness of each layer are consistent with the semiconductor light emitting unit 210 . The thickness of the semiconductor light emitting unit 210 is 3-10 μm.

Referring to FIGS. 6-8 , each semiconductor light emitting unit 210 includes a first semiconductor stack layer, and the semiconductor island structure 220 includes a second semiconductor stack layer. The height of the semiconductor island structure 220 is less than or equal to the height of the semiconductor light emitting unit 210, and the height of the semiconductor island structure 220 is preferably less than or equal to the height of the first semiconductor stack layer. Both the first semiconductor stack layer and the second semiconductor stack layer include a first semiconductor layer 201, an active layer 202 and a second semiconductor layer 203; the first semiconductor layer 201 is an N-type semiconductor layer, and the active layer 202 is a multilayer quantum The well layer can provide blue, green or red radiation, and can also provide ultraviolet or infrared radiation. The second semiconductor layer 203 is a P-type semiconductor layer. The N-type semiconductor layer, the multi-layer quantum well layer, and the P-type semiconductor layer are only the basic constituent units of the first semiconductor stack layer. Functional structural layer of the role.

In order to obtain a plurality of semiconductor light emitting units 210 and semiconductor island structures 220, the semiconductor stack layer 200 can be obtained first on the substrate 100, and then the semiconductor stack layer 200 is etched from the surface of the semiconductor stack layer 200 to the surface of the substrate 100 through a vertical etching process, To form a plurality of semiconductor light emitting units 210 and semiconductor island structures 220 . Preferably, part of the semiconductor material layer on the semiconductor island structure 220 is further etched to make the height of the semiconductor island structure 220 smaller than the height of the semiconductor light emitting unit 210 .

The shape of the upper surface of the semiconductor island structure 220 includes, but is not limited to, circular or polygonal, and the width of the upper surface of the semiconductor island structure 220 is at least 30 μm. Preferably, the width of the upper surface of the semiconductor island structure 220 is implemented according to the size of the current thimble , the width of the upper surface of the semiconductor island structure 220 is at least 50 μm. In this embodiment, both the upper surface and the lower surface of the semiconductor island structure 220 are circular, and the diameter of the upper surface of the semiconductor island structure 220 is smaller than the diameter of the lower surface of the semiconductor island structure 220 .

In one embodiment, the flip-chip light emitting diode may further include a metal block 800 , and the metal block 800 is located above the semiconductor island structure 220 . The metal block 800 has a certain degree of ductility, which can buffer the force of the thimble to a certain extent. The thickness of the metal block 800 is between 0.5-10 μm, and the thickness of the metal block 800 is preferably 1-3 μm. In this embodiment, the preparation materials of the metal block 800 include but are not limited to Au, Ti, Al, Cr, Pt, TiW alloy or any combination of Ni.

Referring to FIG. 7 , the metal block 800 is directly in contact with the upper surface of the semiconductor island structure 220 , and the protection layer 600 is located above the metal block 800 . Specifically, the metal block 800 covers the upper surface of the semiconductor island structure 220 , or, the metal block 800 covers the upper surface and at least part of the sidewall of the semiconductor island structure 220 .

Alternatively, referring to FIG. 8 , the metal block 800 is located on the upper surface of the protective layer 600 and above the semiconductor island structure 220 , that is to say, the protective layer 600 is located between the metal block 800 and the semiconductor island structure 220 . Preferably, the material and thickness of the metal block 800 are the same as those of the first pad 700 and the second pad 710, and the metal block 800 is located between the first pad 700 and the second pad 710, and is connected to the first pad 700. Keep a certain distance from the second pad 710 . The width of the metal block 800 is smaller than or equal to the width of the semiconductor island structure 220 .

It should be noted that the design of the semiconductor island structure 220 can prevent the protection layer 600 at the semiconductor light emitting unit 210 from cracking to a certain extent, and the metal block 800 is not necessarily provided.

In one embodiment, referring to FIG. 9 , the flip-chip light emitting diode further includes a current blocking layer 300, and in every two adjacent semiconductor light emitting units 210, the current blocking layer 300 starts from the first semiconductor light emitting unit 210 on the left The second semiconductor layer 203 extends to the first semiconductor layer 201 in the right semiconductor light emitting unit 210 . The material of the current blocking layer 300 may be one or more of silicon oxide, silicon nitride, silicon carbide or silicon oxynitride.

The semiconductor light emitting unit 210 at the head end is provided with a first electrode 500 , and the first electrode 500 is electrically connected to the first semiconductor layer 201 in the semiconductor light emitting unit 210 .

The semiconductor light emitting unit 210 at the end is provided with a second electrode 510 . In the semiconductor light emitting unit 210 at the end, a transparent conductive layer 400 is formed on the second semiconductor layer 203 , and the transparent conductive layer 400 includes but is not limited to an indium tin oxide layer. The transparent conductive layer 400 includes an opening, and the opening exposes part of the second semiconductor layer 203 , and the second electrode 510 contacts the second semiconductor layer 203 through the opening.

The second electrode 510 includes a block portion and at least one strip portion extending from the block portion. The second electrode 510 includes a block portion or a strip portion passing through the opening in the transparent conductive layer 400 and the second semiconductor layer 203. contacts to improve the adhesion of the second electrode 510 .

The width of the opening located under the strip portion in the second electrode 510 is larger than the width of the strip portion in the second electrode 510 . The width of the opening below the bulk portion in the second electrode 510 is smaller than the width of the bulk portion in the second electrode 510 , so that the edge of the bulk portion is located on the upper surface of the transparent conductive layer 400 .

Two adjacent semiconductor light emitting units 210 are electrically connected through the interconnection electrode 520. Specifically, among each two adjacent semiconductor light emitting units 210, the left semiconductor light emitting unit 210 includes the above-mentioned transparent conductive layer 400, which is transparent and conductive. The layer 400 is located on the current blocking layer 300 above the second semiconductor layer 203 , and the interconnect electrode 520 extends from the transparent conductive layer 400 in the left semiconductor light emitting unit 210 to the first semiconductor layer 201 in the right semiconductor light emitting unit 210 .

The first electrode 500, the second electrode 510 and the interconnection electrode 520 may include an adhesion layer, a reflection layer and a barrier layer, wherein the adhesion layer is a chromium layer or a titanium layer, the reflection layer is an aluminum layer, and the barrier layer is a titanium layer and a platinum layer Composition of repeated stacks.

The protective layer 600 is respectively provided with through holes located above the first electrode 500 and the second electrode 510, and the first pad 700 and the second pad 710 are located on the protective layer 600, and are connected to the first electrode 500, The second electrode 510 is connected.

The protective layer 600 includes but is not limited to a distributed Bragg reflector or a single-layer insulating layer. In this embodiment, the material of the protective layer 600 is SiO ₂ , TiO ₂ , ZnO ₂ , ZrO ₂ , Cu ₂ O ₃ and other materials. At least two of them, which are specifically distributed Bragg reflectors made by alternately stacking two materials into multiple layers using techniques such as electron beam evaporation or ion beam sputtering.

Example 3

The present application provides a method for preparing a flip-chip light-emitting diode, and specifically provides a method for preparing a flip-chip light-emitting diode as shown in FIG. 1 . The preparation method comprises the following steps:

S1. Referring to FIG. 10 , a substrate 100 is provided, and a semiconductor stack layer 200 is formed on the substrate 100 .

The semiconductor stack 200 includes a first semiconductor layer 201, an active layer 202 and a second semiconductor layer 203; the first semiconductor layer 201 is an N-type semiconductor layer, the active layer 202 is a multilayer quantum well layer, and the second semiconductor layer 203 is P-type semiconductor layer. In this embodiment, the substrate 100 is a patterned sapphire substrate or a flat sapphire substrate.

S2. Referring to FIG. 11 , etch the semiconductor stack layer 200 and form a trench 230 that runs through the semiconductor stack layer 200. The trench 230 is annular and divides the semiconductor stack layer 200 into independent semiconductor light emitting units 210 and semiconductor island structures 220. The light emitting unit 210 surrounds the periphery of the semiconductor island structure 220 .

The width of the trench 230 is the width W ₁ of the gap between the semiconductor island structure 220 and the semiconductor light emitting unit 210 , and W ₁ increases from bottom to top.

The shape of the upper surface of the semiconductor island structure 220 is circular or polygonal, and the width of the upper surface of the semiconductor island structure 220 is at least 30 μm. Preferably, the width of the upper surface of the semiconductor island structure 220 is implemented according to the current thimble size. The semiconductor island structure The width of the upper surface of 220 is at least 50 μm. In this embodiment, both the upper surface and the lower surface of the semiconductor island structure 220 are circular, and the diameter of the upper surface of the semiconductor island structure 220 is smaller than the diameter of the lower surface of the semiconductor island structure 220 .

S3. Referring to FIG. 12 , a protective layer 600 is formed on the semiconductor light emitting unit 210 , the semiconductor island structure 220 and the trench 230 . The protective layer 600 includes but is not limited to a distributed Bragg reflector or a single insulating layer.

Specifically, the semiconductor light emitting unit 210 includes a first semiconductor stack layer, and a transparent conductive layer 400 is formed on the first semiconductor stack layer. The transparent conductive layer 400 includes an opening, and the opening exposes part of the second semiconductor layer 203 . The material of the transparent conductive layer 400 is generally selected from a transparent conductive material, and can be specifically selected from indium tin oxide.

The first semiconductor stack layer has a mesa that exposes part of the first semiconductor layer 201, and a first electrode 500 is formed on the mesa; a second electrode 510 is formed on the transparent conductive layer 400, and the second electrode 510 passes through the opening and the second semiconductor layer. Layer 203 contacts.

The second electrode 510 includes a block portion and at least one strip portion extending from the block portion. The second electrode 510 includes a block portion or a strip portion passing through the opening in the transparent conductive layer 400 and the second semiconductor layer 203. contact to improve the adhesion of the second electrode 510 .

The width of the opening located under the strip portion in the second electrode 510 is larger than the width of the strip portion in the second electrode 510 . The width of the opening below the bulk portion in the second electrode 510 is smaller than the width of the bulk portion in the second electrode 510 , so that the edge of the bulk portion is located on the upper surface of the transparent conductive layer 400 .

Etching the protection layer 600 and forming through holes above the first electrode 500 and the second electrode 510 respectively, and the above through holes are used to form the first pad 700 corresponding to the first electrode 500 and the first pad 700 corresponding to the second electrode 510. Two pads 710 .

S4, forming the first pad 700 and the second pad 710 electrically connected to the semiconductor light emitting unit 210 . In this step, the flip-chip light-emitting diode shown in FIG. 2 can be obtained.

In one embodiment, it also includes: while forming the first electrode 500 and the second electrode 510, forming a metal block 800 on the semiconductor island structure 220; the metal block 800 covers the upper surface of the semiconductor island structure 220, or, the metal Block 800 covers the upper surface and at least part of the sidewalls of semiconductor island structure 220 . The thickness of the metal block 800 is 0.5-10 μm, and the thickness of the metal block 800 is preferably 1-3 μm. In this embodiment, the material of the metal block 800 can be the same as that of the first electrode 500 and the second electrode 510 . In this step, the flip-chip light-emitting diode shown in FIG. 3 can be obtained.

In one embodiment, the method further includes: forming the metal block 800 on the upper surface of the protective layer 600 above the semiconductor island structure 220 while forming the first pad 700 and the second pad 710 . The thickness of the metal block 800 is 0.5-10 μm, and the thickness of the metal block 800 is preferably 1-3 μm. In this embodiment, the material of the metal block 800 can be the same as that of the first pad 700 and the second pad 710 . In this step, the flip-chip light-emitting diode shown in FIG. 4 can be obtained.

Example 4

The present application provides a method for manufacturing a flip-chip diode, and specifically provides a method for manufacturing a flip-chip light-emitting diode as shown in FIG. 5 . The preparation method comprises the following steps:

S10, providing a substrate 100, and forming a plurality of semiconductor light emitting units 210 arranged at intervals in a predetermined direction on the substrate 100, and electrically connecting adjacent semiconductor light emitting units 210; the central area of the flip-chip light emitting diode A semiconductor island structure 220 is formed between adjacent semiconductor light emitting units 210 , and there is a gap between the semiconductor island structure 220 and the adjacent semiconductor light emitting unit 210 . The number of semiconductor light emitting units 210 is odd or even, and the number of semiconductor light emitting units 210 is preferably even. The semiconductor island structure 220 is located in the central area of the flip-chip light-emitting diode, so as to realize that the areas of the light-emitting regions of the semiconductor light-emitting units 210 are as close as possible.

Specifically, a semiconductor stack layer 200 is formed on the substrate 100. The semiconductor stack layer 200 includes a first semiconductor layer 201, an active layer 202, and a second semiconductor layer 203; the first semiconductor layer 201 is an N-type semiconductor layer, and the active layer 202 is a multi-layer quantum well layer, and the second semiconductor layer 203 is a P-type semiconductor layer. Etching the semiconductor stack layer 200 and forming a plurality of first semiconductor stack layers for forming the semiconductor light emitting unit 210, the adjacent first semiconductor stack layers are separated by isolation grooves 240, and the semiconductor island structure 220 is formed in the central region of the substrate 100 In the isolation groove 240.

The width W1 _of the gap between the semiconductor island structure 220 and its adjacent semiconductor light emitting unit 210 increases from bottom to top. The shape of the upper surface of the semiconductor island structure 220 is circular or polygonal, and the width of the upper surface of the semiconductor island structure 220 is at least 30 μm. Preferably, the width of the upper surface of the semiconductor island structure 220 is implemented according to the current thimble size. The semiconductor island structure The width of the upper surface of 220 is at least 50 μm. In this embodiment, both the upper surface and the lower surface of the semiconductor island structure 220 are circular, and the diameter of the upper surface of the semiconductor island structure 220 is smaller than the diameter of the lower surface of the semiconductor island structure 220 .

In every two adjacent semiconductor light emitting units 210 , the current blocking layer 300 extends from the second semiconductor layer 203 on the left side to the first semiconductor layer 201 on the right side through the isolation groove 240 . The material of the current blocking layer 300 may be one or more of silicon oxide, silicon nitride, silicon carbide or silicon oxynitride.

In the semiconductor light emitting unit 210 at the end, a transparent conductive layer 400 is formed on the second semiconductor layer 203 , and its material is generally selected from a transparent conductive material, and can be specifically selected from indium tin oxide. In every two adjacent semiconductor light emitting units 210 , the left semiconductor light emitting unit 210 also includes the above-mentioned transparent conductive layer 400 , and the transparent conductive layer 400 is located on the current blocking layer 300 above the second semiconductor layer 203 .

A first electrode 500 is formed on the first semiconductor layer 201 in the semiconductor light emitting unit 210 at the head end.

A second electrode 510 is formed on the transparent conductive layer 400 in the semiconductor light emitting unit 210 at the tail end, and the second electrode 510 is in contact with the second semiconductor layer 203 through the opening.

The second electrode 510 includes a block portion and at least one strip portion extending from the block portion. The second electrode 510 includes a block portion or a strip portion passing through the opening in the transparent conductive layer 400 and the second semiconductor layer 203. contacts to improve the adhesion of the second electrode 510 .

The width of the opening located under the strip portion in the second electrode 510 is larger than the width of the strip portion in the second electrode 510 . The width of the opening below the bulk portion in the second electrode 510 is smaller than the width of the bulk portion in the second electrode 510 , so that the edge of the bulk portion is located on the upper surface of the transparent conductive layer 400 .

An interconnect electrode 520 for connecting adjacent semiconductor light emitting units 210 is formed, and in every two adjacent semiconductor light emitting units 210, the interconnect electrode 520 extends from the transparent conductive layer 400 in the left semiconductor light emitting unit 210 to the right on the first semiconductor layer 201 in the semiconductor light emitting unit 210 .

S20 , forming a protection layer 600 at the plurality of semiconductor light emitting units 210 , semiconductor island structures 220 and isolation grooves 240 , the protection layer 600 includes but is not limited to a distributed Bragg reflector or a single insulating layer.

Etching the protection layer 600 and forming through holes above the first electrode 500 and the second electrode 510 respectively, and the above through holes are used to form the first pad 700 corresponding to the first electrode 500 and the first pad 700 corresponding to the second electrode 510. Two pads 710 .

S30 , forming a first pad 700 electrically connected to the semiconductor light emitting unit 210 at the head end, and a second pad 710 electrically connected to the semiconductor light emitting unit 210 at the tail end. In this step, the flip-chip light-emitting diode shown in FIG. 6 can be obtained.

In one embodiment, it further includes: forming a metal block 800 on the semiconductor island structure 220 while forming the first electrode 500 , the second electrode 510 and the interconnection electrode 520 ; the metal block 800 covers the semiconductor island structure 220 The surface, or the metal block 800 covers the upper surface and at least part of the sidewalls of the semiconductor island structure 220 . The thickness of the metal block 800 is between 0.5-10 μm, and the thickness of the metal block 800 is preferably 1-3 μm. In this embodiment, the material of the metal block 800 can be prepared with the first electrode 500, the second electrode 510 or the interconnection electrode 520 same. In this step, the flip-chip LED shown in FIG. 7 can be obtained.

In one embodiment, the method further includes: forming the metal block 800 on the upper surface of the protective layer 600 above the semiconductor island structure 220 while forming the first pad 700 and the second pad 710 . The thickness of the metal block 800 is 0.5-10 μm, and the thickness of the metal block 800 is preferably 1-3 μm. In this embodiment, the material of the metal block 800 can be the same as that of the first pad 700 and the second pad 710 . In this step, the flip-chip light-emitting diode shown in FIG. 4 can be obtained.

According to one aspect of the present application, a light-emitting device is provided. The light-emitting device may be an illumination device, a backlight device, a display device, such as a lamp, a TV, a mobile phone, a panel, or an RGB display. The light-emitting device includes the flip-chip light-emitting diodes in the above embodiments, and the above-mentioned flip-chip light-emitting diodes are integrally mounted on the application substrate or the packaging substrate in the number of hundreds, thousands, or tens of thousands to form the light source part.

It can be known from the above technical solutions that the present application forms a semiconductor island structure 220 at the central region of the flip-chip light-emitting diode. There is a gap between the semiconductor island structure 220 and the semiconductor light-emitting unit 210, and it is not used for the conductive light-emitting process of the flip-chip light-emitting diode. The area where the semiconductor island structure 220 is located is used as the action area of the thimble. When the thimble acts on the above-mentioned area, the crack that the thimble pierces or breaks through the protective layer 600 only extends to the upper surface or around the side wall of the semiconductor island structure 220. To a certain extent, it can avoid cracks from being directly transmitted to the protective layer 600 at the semiconductor light emitting unit 210, thereby avoiding the leakage failure phenomenon of the flip-chip light emitting diode due to the puncture or bursting of the protective layer 600 at the semiconductor light emitting unit 210, and improving the flip-chip LED performance. Install the reliability of light-emitting diodes.

The above description is only the preferred implementation mode of the present application. It should be pointed out that for those of ordinary skill in the art, without departing from the technical principle of the present application, some improvements and replacements can also be made. These improvements and replacements It should also be regarded as the protection scope of the present application.

Claims (43)

1. A flip-chip light-emitting diode, characterized in that, comprising: Substrate; at least one semiconductor light emitting unit located on the substrate; The semiconductor island structure has an upper surface and side walls, and is located on the substrate independently of the semiconductor light-emitting unit. When the flip-chip light-emitting diode is in a energized state, the semiconductor island structure does not emit light. The island structure is located in the central area of the flip-chip light-emitting diode; A protective layer, the protective layer covers at least the upper surface and sidewalls of the semiconductor island structure. 2. The flip-chip light-emitting diode according to claim 1, wherein the width of the upper surface of the semiconductor island structure is at least 30 μm. 3 . The flip-chip light emitting diode according to claim 1 , wherein the shape of the upper surface of the semiconductor island structure is circular or polygonal. 4. The flip chip light emitting diode according to claim 1, wherein the height of the semiconductor island structure is less than or equal to the height of the semiconductor light emitting unit. 5. The flip chip light emitting diode according to claim 1, further comprising a metal block, the metal block is located above the semiconductor island structure. 6 . The flip chip light emitting diode according to claim 5 , wherein the metal block is directly in contact with the upper surface of the semiconductor island structure. 7 . The flip-chip light-emitting diode according to claim 5 , wherein the thickness of the metal block is between 0.5 μm and 10 μm. 8. The flip-chip light-emitting diode according to claim 5, wherein the metal block is located on the upper surface of the protective layer; or, the metal block is arranged on the upper surface of the semiconductor island structure and is protected by the layer coverage. 9. The flip-chip light-emitting diode according to claim 1, further comprising a first pad and a second pad; The area covered by the protective layer also includes the upper surface and side walls of the semiconductor light emitting unit; the semiconductor light emitting unit includes a first semiconductor layer, an active layer and a second semiconductor layer; The first welding pad is located on the protective layer, and is electrically connected to the first semiconductor layer in the semiconductor light emitting unit through the protective layer, the second welding pad is located on the protective layer, and The protective layer is electrically connected to the second semiconductor layer in the semiconductor light-emitting unit; the protective layer is a distributed Bragg reflector or a single-layer insulating layer. 10. The flip-chip light emitting diode according to claim 1, wherein neither the first bonding pad nor the second bonding pad is above the semiconductor island structure. 11. The flip-chip light-emitting diode according to claim 1, wherein the number of the semiconductor light-emitting unit is one. 12 . The flip chip light emitting diode according to claim 11 , wherein the semiconductor light emitting unit surrounds the periphery of the semiconductor island structure. 13 . 13. The flip-chip light-emitting diode according to claim 1, wherein the number of the semiconductor light-emitting units is multiple, and the plurality of semiconductor light-emitting units are arranged at intervals; the number of the semiconductor light-emitting units is an odd number or an even number. 14. The flip chip light emitting diode according to claim 13, wherein the semiconductor island structure is located between adjacent semiconductor light emitting units. 15 . The flip chip light emitting diode according to claim 14 , wherein the adjacent semiconductor light emitting units are electrically connected. 16 . The flip chip light emitting diode according to claim 1 , wherein the width of the gap between the semiconductor island structure and the semiconductor light emitting unit increases gradually from bottom to top. 17. A flip-chip light-emitting diode, characterized in that it comprises: Substrate; two semiconductor light emitting units located on the substrate; The semiconductor island structure has an upper surface and side walls, and the two semiconductor light-emitting units are located on the substrate independently of each other. When the flip-chip light-emitting diode is in a powered state, the semiconductor island structure does not emit light. The island structure is located between the two semiconductor light emitting units. 18 . The flip-chip light emitting diode according to claim 17 , further comprising a protection layer, the protection layer covering at least the upper surface and the sidewall of the semiconductor island structure. 19. The flip-chip light-emitting diode according to claim 17, wherein the width of the upper surface of the semiconductor island structure is at least 30 μm. 20. The flip-chip light-emitting diode according to claim 17, wherein the shape of the upper surface of the semiconductor island structure is circular or polygonal, and the semiconductor island structure is located at the central region of the flip-chip light-emitting diode. 21. The flip chip light emitting diode according to claim 17, wherein the height of the semiconductor island structure is less than or equal to the height of the semiconductor light emitting unit, and the thickness of the semiconductor light emitting unit is 3-10 μm. 22. The flip-chip light-emitting diode according to claim 17, further comprising a metal block, the metal block is located above the semiconductor island structure, and the thickness of the metal block is between 0.5-10 μm. 23. The flip-chip light-emitting diode according to claim 17, wherein the metal block is directly in contact with the upper surface of the semiconductor island structure. 24. The flip-chip light-emitting diode according to claim 17, further comprising a protective layer and a metal block, the protective layer covers at least the upper surface and the sidewall of the semiconductor island structure, and the metal block is located at the protective top surface of the layer. 25. The flip-chip light emitting diode according to claim 17, further comprising a protective layer and a metal block, the metal block is arranged on the upper surface of the semiconductor island structure and covered by the protective layer. 26. The flip-chip light-emitting diode according to claim 17, further comprising a first pad and a second pad; The area covered by the protective layer also includes the upper surface and side walls of the semiconductor light emitting unit; the semiconductor light emitting unit includes a first semiconductor layer, an active layer and a second semiconductor layer; The first welding pad is located on the protective layer, and is electrically connected to the first semiconductor layer in the semiconductor light emitting unit through the protective layer, the second welding pad is located on the protective layer, and It is electrically connected with the second semiconductor layer in the semiconductor light emitting unit through the protection layer. 27. The flip-chip light emitting diode according to claim 27, wherein neither the first bonding pad nor the second bonding pad is above the semiconductor island structure. 28. The flip-chip light-emitting diode according to claim 17, wherein the width of the gap between the semiconductor island structure and the semiconductor light-emitting unit increases from bottom to top, and the diameter of the upper surface of the semiconductor island structure is smaller than that of the semiconductor island structure. The diameter of the lower surface of the island structure; the width of the gap between the semiconductor island structure and the semiconductor light emitting unit increases from bottom to top. 29. The flip-chip light-emitting diode according to claim 17, characterized in that there is a gap between the two semiconductor light emitting units, and the gap surrounds the semiconductor island structure at the same time, and the semiconductor island structure and the semiconductor light emitting unit The width W1 of the gap between the cells at the bottom is 3 μm or more. 30. The flip-chip light-emitting diode according to claim 17, characterized in that it further comprises an interconnection electrode connecting the two light-emitting units, and from the top view of the flip-chip light-emitting diode, the interconnection electrode is not located at on the semiconductor structure. 31. A flip-chip light-emitting diode, characterized in that it comprises: Substrate; two semiconductor light emitting units located on the substrate; The semiconductor island structure has an upper surface and side walls, and is located on the substrate independently of the two semiconductor light-emitting units. When the flip-chip light-emitting diode is in a energized state, the semiconductor island structure does not emit light, thus Seen from the top view, the flip-chip light-emitting diode includes two interconnect electrodes, and the two interconnect electrodes are respectively located on both sides of the semiconductor island structure. 32. The flip-chip light-emitting diode according to claim 32, further comprising a protection layer, the protection layer covering at least the upper surface and the sidewall of the semiconductor island structure. 33. The flip-chip light-emitting diode according to claim 32, wherein the width of the upper surface of the semiconductor island structure is at least 30 μm, or at least 50 μm. 34. The flip-chip light emitting diode according to claim 32, characterized in that, the shape of the upper surface of the semiconductor island structure is circular or polygonal, and the semiconductor island structure is located at the central region of the flip-chip light emitting diode. 35. The flip chip light emitting diode according to claim 32, wherein the height of the semiconductor island structure is less than or equal to the height of the semiconductor light emitting unit, and the thickness of the semiconductor light emitting unit is 3-10 μm. 36. The flip-chip light-emitting diode according to claim 32, further comprising a metal block, the metal block is located above the semiconductor island structure, and the thickness of the metal block is between 0.5-10 μm. 37. The flip-chip light emitting diode according to claim 32, wherein the metal block is directly in contact with the upper surface of the semiconductor island structure. 38. The flip-chip light-emitting diode according to claim 32, further comprising a protective layer and a metal block, the protective layer covers at least the upper surface and the sidewall of the semiconductor island structure, and the metal block is located at the protective top surface of the layer. 39. The flip chip light emitting diode according to claim 32, further comprising a protective layer and a metal block, the metal block is arranged on the upper surface of the semiconductor island structure and covered by the protective layer. 40. The flip-chip light-emitting diode according to claim 32, further comprising a first pad and a second pad; The area covered by the protective layer also includes the upper surface and side walls of the semiconductor light emitting unit; the semiconductor light emitting unit includes a first semiconductor layer, an active layer and a second semiconductor layer; The first welding pad is located on the protective layer, and is electrically connected to the first semiconductor layer in the semiconductor light emitting unit through the protective layer, the second welding pad is located on the protective layer, and The protective layer is electrically connected to the second semiconductor layer in the semiconductor light emitting unit, and neither the first pad nor the second pad is above the semiconductor island structure. 41. The flip-chip light-emitting diode according to claim 32, wherein the width of the gap between the semiconductor island structure and the semiconductor light-emitting unit increases from bottom to top, and the diameter of the upper surface of the semiconductor island structure is smaller than that of the semiconductor island structure. The diameter of the lower surface of the island structure and the width W1 at the bottom of the gap between the semiconductor island structure and the semiconductor light emitting unit are greater than or equal to 3 μm. 42. The flip-chip light emitting diode according to claim 32, wherein there is a gap between the two semiconductor light emitting units, and the gap surrounds the semiconductor island structure at the same time. 43. A light-emitting device, characterized by comprising the flip-chip light-emitting diode according to any one of claims 1-43.

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