CN103943650B - Organic electroluminescent display device and mask plate thereof - Google Patents
Organic electroluminescent display device and mask plate thereof Download PDFInfo
- Publication number
- CN103943650B CN103943650B CN201310062710.2A CN201310062710A CN103943650B CN 103943650 B CN103943650 B CN 103943650B CN 201310062710 A CN201310062710 A CN 201310062710A CN 103943650 B CN103943650 B CN 103943650B
- Authority
- CN
- China
- Prior art keywords
- emission layer
- green
- red
- pixel region
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 claims abstract description 18
- 230000008020 evaporation Effects 0.000 claims abstract description 7
- 238000001704 evaporation Methods 0.000 claims abstract description 7
- 241001062009 Indigofera Species 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 230000007547 defect Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 166
- 238000002347 injection Methods 0.000 description 15
- 239000007924 injection Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- VAJVDSVGBWFCLW-UHFFFAOYSA-N 3-Phenyl-1-propanol Chemical compound OCCCC1=CC=CC=C1 VAJVDSVGBWFCLW-UHFFFAOYSA-N 0.000 description 1
- 206010049865 Achromotrichia acquired Diseases 0.000 description 1
- PMPVIKIVABFJJI-UHFFFAOYSA-N Cyclobutane Chemical compound C1CCC1 PMPVIKIVABFJJI-UHFFFAOYSA-N 0.000 description 1
- DYUQAZSOFZSPHD-UHFFFAOYSA-N Phenylpropyl alcohol Natural products CCC(O)C1=CC=CC=C1 DYUQAZSOFZSPHD-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
The organic electroluminescent display device provided by the invention has the advantages that the pixels are specially distributed, the size of the opening of the adopted evaporation mask is greatly increased, and the organic electroluminescent display device can be suitable for the pixel design criterion with higher resolution under the same mask design criterion, so that the display device with higher resolution is manufactured. The invention realizes four-color display by using three-color stacking on the premise of not increasing process complexity and process procedure. Thereby realizing the reduction of defects caused by hole blockage, deformation and the like of the mask plate.
Description
Technical field
The present invention relates to technical field of flat panel display, particularly relate to a kind of ORGANIC ELECTROLUMINESCENCE DISPLAYS (OLED)
Device and be exclusively used in the mask plate of this display device.
Background technology
OLED, i.e. ORGANIC ELECTROLUMINESCENCE DISPLAYS (Organic Electroluminesence Display, OLED),
Also referred to as Organic Light Emitting Diode (Organic Light-Emitting Diode).OLED Display Technique with
Traditional LCD display mode is different, it is not necessary to backlight, uses the thinnest coating of organic material and glass base
Plate, when there being electric current to pass through, these organic materials will be luminous.And OLED display screen can be made more
Light thinner, visible angle is bigger, can save significantly on electric energy.OLED by multiple light emitting pixels according to matrix structure
Being arranged in a combination, light emitting pixel each for color OLED includes again red sub-pixels, green sub-pixel and Lan Zi
Pixel, can also include white sub-pixel for WOLED.
Fig. 1 is the pixel schematic diagram of prior art OLED device.As it is shown in figure 1, OLED 101 includes multiple
Pixel P, each pixel " P " includes red green and blue sub-pixels region " SPr ", " SPg " and " SPb ".
Each pixel " P " has rectangular shape, thus has width F and height H.Red green and blue sub-pixels district
Territory is disposed in each pixel along horizontal direction or vertical direction.Such as, red green and blue sub-pixels district
Territory " SPr ", " SPg " and " SPb " respectively has the width of 1/3 of the width " F " corresponding to pixel " P "
Height with the height " H " corresponding to pixel " P ".
Red (R), green (G) and blue (B) emission layer 102,103 and 104 are not formed at red, green and blue sub-picture
In element region " SPr ", " SPg " and " SPb ".This red, green and blue emission layer 102,103 and 104 and
One electrode constitutes light emitting diode together with the second electrode (not shown).In the prior art, OLED uses
The trichroism independent ray structure of RGB, uses evaporation masking process in processing procedure, i.e. uses evaporation mask plate respectively
Block, form the trichroism structure of R, G, B.Red green and blue sub-pixels region " SPr ", " SPg " and " SPb "
Between be spaced apart first distance " a ", the value of a is by shadow problem (shadow problem) and covers
The impact of lamina membranacea precision.Therefore, emission layer red green and blue sub-pixels region " SPr ", " SPg " and " SPb "
Respectively there is width " W " and height " h ", and be spaced apart from each other by the first distance " a ".Described red,
Green and blue emission layer 102,103 and 104 is formed by using shield mask heat deposition.In FIG, red, green
It is the lap of the first electrode and the second electrode with blue emission layer 102,103 and 104.
OLED 101 utilizes red, green and blue emission layer 102,103 and 104 in red green and blue sub-pixels district
Display full-color image in territory " SPr ", " SPg " and " SPb ".In order to meet high-resolution demand,
The area of one pixel " P " and red green and blue sub-pixels region " SPr ", " SPg " and the face of " SPb "
Amass and be increasingly reduced within a few seconds, thus the area of red, green and blue emission layer 102,103 and 104 is also reduced.But,
Being limited by mask plate processing technology, a has a ultimate value, limits the limit of pixel typesetting density.
It addition, the pixel design of elongate so that in use, agglomerated materials is at mask in the perforate of mask plate
Deposit on plate, easily cause blocking.
It addition, OLED can also use white light parts to add color membrane process to realize colour picture in prior art.
WOLED uses white light parts as luminous source, and the general fashion of employing is blue yellow two-color device, coordinates color film
Realize colour picture, but the transmitance of color film is lost, and colour gamut is limited relatively by white light parts light source light spectrum
Narrow.
Summary of the invention
Therefore, the present invention is by providing a kind of ORGANIC ELECTROLUMINESCENCE DISPLAYS (OLED) device and being exclusively used in this and show
Show the mask plate of device, its effectively prevent due to the restriction of prior art and defect cause one or more
Ground problem.
A kind of organic elctroluminescent device, including:
Multiple pixels, each described pixel includes the first pixel region and the second pixel region；
Described first pixel region is arranged on line n, and described second pixel region is arranged on the (n+1)th row, n
More than or equal to 1；
Described first pixel region includes that subpixel area red, white, green, described second pixel region include indigo plant
Subpixel area；
Red emission layer, described red emission layer is formed in described red sub-pixels region and white sub-pixel region；
Green emission layer, described green emission layer is formed in described green subpixel area and white sub-pixel region；
Blue emission layer, described blue emission layer is formed in described blue subpixel area and white sub-pixel region；
White emission layer, described white emission layer is formed by described red emission layer, green emission layer, blue emission layer stacking.
Preferably, in each described first pixel region each subpixel area put in order identical.
Preferably, putting in order as red sub-pixels district from left to right in described the first adjacent pixel region
Territory, white sub-pixel region, green subpixel area.
Preferably, in described first pixel region not light-emitting zone between adjacent subpixels region by digging
Anode metal or the cathodic metal in this region empty are formed.
Preferably, in described first pixel region not light-emitting zone between adjacent subpixels region by setting
The organic membrane pattern putting projection is formed.
Preferably, described red emission layer, green emission layer, blue emission layer are formed by mask evaporation process.
Preferably, the spacing of emission layer adjacent in described first pixel region is the first distance, adjacent
Described first pixel region in emission layer and the emission layer in the second pixel region between distance be
Two distances, described first distance and described second distance are all higher than equal to the first ultimate value.
Preferably, the height of the mask plate perforate for forming described red emission layer or green emission layer is equal to
Red emission layer or the width of green emission layer；The width of described mask plate perforate is equal to red emission layer or green emission layer
Width plus the width of white emission layer plus the first distance.
Preferably, Part I and second are included for forming the mask plate perforate of described blue emission layer
Point, the width of described Part I equal to 2 times of described red emission layer or green emission layer width plus described the
One distance 2 times plus the width of described white emission layer, the height of described Part I and red emission layer or green
The height penetrating layer is equal；The width of described Part II is equal to the width of white emission layer, described Part II
Highly add second distance equal to the height of described red emission layer.
A kind of mask plate, it is characterised in that described mask plate is for forming the Organic Electricity described in any of the above-described item
Emission layer in electroluminescent display part.
Compared with prior art, the invention have the advantages that
The organic elctroluminescent device that the present invention provides, carries out specified arrangement to pixel, by indigo plant emission layer
It is arranged in the second pixel region with the first pixel region different rows at emission layer place red, white, green, convenient
Increase the service life of blue pixel, and the method used realizes the bore size of evaporation mask plate significantly
Increase, under same mask plate design criteria, go for the pixel design criteria of higher resolution,
Thus the display device realizing higher resolution makes.The present invention is not increasing process complexity, manufacturing process
On the premise of, by utilizing trichroism stacking, it is achieved that four colors show.Thus realize reduce mask plate plug-hole,
The defect that deformation brings.
Accompanying drawing explanation
Some embodiment with reference to accompanying drawing and invention is described the above and other feature of the present invention.
Fig. 1 is the pixel schematic diagram of OLED in prior art.
Fig. 2 is the pixel schematic diagram of OLED in the present invention.
Fig. 3 is the sectional view of the subpixel area of OLED in the present invention.
Fig. 4 (a) is to form the schematic diagram of red emission layer the first mask plate in the present embodiment.
Fig. 4 (b) is the schematic diagram forming the present embodiment medium green emission layer the first mask plate.
Fig. 5 is to be exclusively used in the schematic diagram of second mask plate forming blue emission layer of OLED in the present invention.
Detailed description of the invention
Understandable for enabling the above-mentioned purpose of the present invention, feature and advantage to become apparent from, below in conjunction with the accompanying drawings to this
The detailed description of the invention of invention is described in detail.
As shown in Figure 2 and Figure 3, it is provided that substrate 201, the first pixel region 202 it is provided with on the substrate 201
With the second pixel region 203, described first pixel region 202 includes red sub-pixels region " SPr ", green son
Pixel region " SPg " and white sub-pixel region " SPw ", described second pixel region 203 includes Lan Zi picture
Element region " SPb ".Described first pixel region 202 is arranged on line n, described second pixel region 203
Being arranged on the (n+1)th row, n is the natural number more than or equal to 1.Preferably, adjacent described first pixel region
Red sub-pixels region " SPr ", white sub-pixel region " SPw ", green subpixel area " SPg " in territory 202
Setting alternating with each other.Each subpixel area includes launch site E and non-emission region.Non-emission region be corresponding to
Region outside the E of launch site.Red emission layer 215R, green emission layer 215G, white emission layer 215W and blue
Penetrate a layer 215B to be both formed in the E of launch site.Described red emission layer 215R is included in red sub-pixels region SRr
In red emission layer Part I 215Rx, and the red emission layer Part II 215Ry in white sub-pixel region.
The green emission layer Part I 215Gx that green emission layer 215G is included in green subpixel area SRg, and
Green emission layer Part II 215Gy in white sub-pixel region.Described blue emission layer 215B includes being formed at
Blue emission layer Part I 215Bx in blue subpixel area SPb and the indigo plant including white sub-pixel region SPw
Emission layer Part II 215By.Described white emission layer 215W is by red emission layer 215R, green emission layer 215G
Formed with blue emission layer 215B stacking.
As it is shown on figure 3, the dot structure of the present invention includes that substrate 201, described substrate 201 can be glass
Substrate, plastic or quartz substrate.Cushion 204 can be formed on substrate 201, semiconductor layer
On the cushion 204 that 205 are formed in non-emission region, semiconductor layer 205 can be by non-crystalline silicon or polysilicon
Formed.Preferably, semiconductor layer 205 is formed by polysilicon.Can be by forming amorphous on the substrate 201
Silicon and crystallize this non-crystalline silicon obtain polysilicon semiconductor layer 205. can utilize metal induced crystallisation technique, gold
Belong to induction lateral crystallization process, quasi-molecule laser annealing technique or continuously transverse solidifying technique and realize non-crystalline silicon
Crystallization.
Gate insulation layer 206 can be formed on semiconductor layer 205, and grid 207 can be formed at gate insulation layer
On 206.Foreign ion can utilize grid 206 to mix semiconductor layer 205 as mask, is thus partly leading
Body layer 205 is formed source region 208a and drain region 208b.Can be in source region 208a and leakage
Channel region 208c is defined between the 208b of territory, polar region.Between insulating barrier 209 can be formed on grid 207.Source
Pole 210a and drain electrode 210b can be formed on an insulating barrier 209.Source electrode 210a can pass through the first mistake
Hole contacts with source region 208a, and drain electrode 210b can be contacted with drain region 208b by the second via.
Passivation layer 211 can be formed at source electrode 210a and drain electrode 210b on, passivation layer 211 can be organic layer,
The combination of inorganic layer or organic layer and inorganic layer.Pixel electrode 212 can be formed on passivation layer 211, and
And can be contacted with drain electrode 210b by the 3rd via.Pixel electrode 212 can be male or female.When
When pixel electrode 212 is anode, can be made up of tin indium oxide (ITO) or indium zinc oxide (IZO).When
When pixel electrode 212 is negative electrode, can be made up of Mg, Ca, Al, Ag, Ba or its alloy.Each picture
Element electrode 212 is positioned at red sub-pixels region " SPr ", green subpixel area " SPg " and white sub-pixel region
In one of " SPw ", blue subpixel area " SPb ".
Define layer 213 with pixel to be formed on pixel electrode 212.Pixel defines layer 213 and includes exposing pixel
The opening 213a of electrode 212, opening 213a define launch site E.Pixel defines layer 213 can be by inorganic
Insulant, as silicon oxide or silicon nitride are formed, or by organic insulation, such as phenylpropyl alcohol cyclobutane or propylene
Acid resin is formed.Then, the first electric charge injection/transport layer 214 is formed at the substrate with opening 213a
On 201.First electric charge injection/transport layer 214 can be single one layer or more electric charge injection/transport layer.Work as picture
When element electrode 212 is anode, the first electric charge injection/transport layer 214 is hole injection/transport layer；Work as pixel
When electrode 212 is negative electrode, the first electric charge injection/transport layer 214 is electronics injection/transport layer.
Red, green, blue, white emission layer 215R, 215G, 215B and 215W are formed at the first electric charge and inject/pass
On defeated layer 214.
Second electric charge injection/transport layer 216 can be formed at red, green, blue, white emission layer
On 215R, 215G, 215B and 215W.Second electric charge injection/transport layer 216 can utilize spin coating proceeding or
Blanket depositing operation is formed.When pixel electrode 212 is anode, the second electric charge injection/transport layer 216 is
Electronics injection/transport layer；When pixel electrode 212 is negative electrode, the second electric charge injection/transport layer 216 is empty
Cave injection/transport layer.
Comparative electrode 217 is formed in the second electric charge injection/transport layer 216.When pixel electrode 212 is sun
During pole, comparative electrode 217 is negative electrode, and comparative electrode 217 can be formed by Al；When pixel electrode 212
When being negative electrode, comparative electrode 217 is anode, and comparative electrode can be formed by ITO.
Pixel electrode 212, the first electric charge injects/transmits 214, each emission layer 215R, 215G, 215B, 215W,
Second electric charge injection/transport layer 216 and comparative electrode 217 form light emitting diode.Described red emission layer
215R is formed in described red sub-pixels region and white sub-pixel region；Described green emission layer 215G is formed at
In described green subpixel area and white sub-pixel region；Described blue emission layer 215B is formed at the sub-picture of described indigo plant
In element region and white sub-pixel region.
In the present embodiment, the red emission layer 215R can being initially formed in the first pixel region 202 and green
Penetrate a layer 215G, then form the blue emission layer 215B in the second pixel region 203.Second can also be initially formed
Blue emission layer 215B in pixel region 203, then form the red emission layer 215R in the first pixel region 202
With green emission layer 215G.White emission layer 215W is by red emission layer 215R, green emission layer 215G and blue transmitting
Layer 215B stacking is formed.
Fig. 4 (a) is to form the schematic diagram of the first mask plate of red emission layer in the present embodiment.
Fig. 4 (b) is the schematic diagram of the first mask plate forming the present embodiment medium green emission layer.
As shown in Fig. 4 (a), Fig. 4 (b), the first mask plate 401 be used for being formed red emission layer 215R or
Green emission layer 215G.Described first mask plate 401 includes the first perforate 402.
It is different from for being formed green for forming the alignment position of first mask plate 401 of red emission layer 215R
The alignment position of first mask plate 401 of emission layer 215G.I.e. first mask plate 401 is along horizontal direction
Mobile to form in red emission layer 215R and green emission layer 215G, form red emission layer the most again
Another in 215R and green emission layer 215G.
In the first pixel region 202, each described first opening portion 402 is corresponding to red emission layer
215R or green emission layer 215G.Red emission layer 215R is included in red emission layer in the SRr of red sub-pixels region
A part of 215Rx, and the 215Ry in white sub-pixel region.Green emission layer 215G is included in green sub-pixel
Green emission layer Part I 215Gx in the SRg of region, and the green emission layer second in white sub-pixel region
Part 215Gy.
The size phase of described red emission layer Part I 215Rx and described green emission layer Part I 215Gx
With, there is the first width W and first height L；Described red emission layer Part II 215Ry with described green
Penetrate the equivalently-sized of layer Part II 215Gy, and equivalently-sized with white emission layer 215W, have
Two width X and first height L.The distance between emission layer adjacent in described first pixel region 202
Be the first distance be a, if the distance between red emission layer Part I 215Rx and white emission layer 215W is the
One distance " a ", the distance of white emission layer 215W and green emission layer Part II 215Gy is the first distance " a ".
Preferably, described second width X is more than described first distance " a ".
Each described first perforate 402 has the first aperture widths U, and described first aperture widths U is equal to
The second width X and first of the first width W and white emission layer 215W of red emission layer Part I 215Rx
Distance a sum, described first perforate 402 has the first perforate length, and described first perforate length is equal to institute
State the first height L.
Fig. 5 is to form the schematic diagram of the second mask plate of blue emission layer in the present embodiment.
As it is shown in figure 5, the second mask plate is used for forming blue emission layer 215B.Described second mask plate includes
Second perforate 502, described second perforate 502 includes the second perforate Part I 502a, and the second perforate
Two parts 502b.
Described blue emission layer 215B includes the blue emission layer Part I being formed in blue subpixel area SPb
215Bx and the blue emission layer Part II 215By including white sub-pixel region SPw.
Described second perforate Part I 502a corresponding to blue emission layer Part I 215Bx, described second
Perforate Part II 502b is corresponding to blue emission layer Part II 215By.
The width of described second perforate Part I 502a is N, described second perforate Part I 502a's
Width " N " is substantially equal to 2 times of add described first distance " a " 2 times of the first width " W " and adds
Described second width " X ", i.e. N=2W+2a+X, the length of described second perforate Part I 502a is equal to
Described first height " L ".The width of described second perforate Part II 502b is equal to described second width " X ",
The length " V " of described second perforate Part II 502b is equal to described first height " L " and second distance
" d " sum, described second distance " d " is the emission layer in adjacent described first subpixel area 202
And distance between emission layer in the second subpixel area 203.
The adjacent distance between emission layer is affected by shadow problem and mask plate precision, there is the first pole
Limit value, described first distance " a " and second distance " d " all could be arranged to more than or equal to this first pole
Limit value.
Described red emission layer 215R, green emission layer 215G and blue emission layer 215B are by using mask plate to steam
Plating and formed, described white emission layer 215W is by red emission layer 215R, green emission layer 215G and blue emission layer
215B stacks formation.Described red emission layer 215R, green emission layer 215G, blue emission layer 215B and poliosis are penetrated
Layer 215W respective pixel electrode 212 and the lap of comparative electrode 217.As in figure 2 it is shown, first
Between the adjacent emitting layer of pixel region and each pixel words spoken by an actor from offstage emission layer 215W and blue emission layer first
Dividing and arrange not light-emitting zone J between 215Bx, light-emitting zone J is not that the opening portion of mask plate is with non-emissive
The region that district is overlapping.In Fig. 2, not light-emitting zone between adjacent emitting layer can use and hollow out this area pixel
Electrode or comparative electrode realize, it would however also be possible to employ realize in methods such as forming protruding organic membrane pattern.
In the present embodiment, the distributing order in the first subpixel area 202 is red sub-pixels region, white chessman
Pixel region, green subpixel area, protection scope of the present invention is not limited to this, the row in the first sub-pixel 202
Cloth order can also be green subpixel area, white sub-pixel region, red sub-pixels region.
In the present embodiment, the first subpixel area 202 is positioned at the top of the second subpixel area 203,
In other embodiments of the invention, it is also possible to the second subpixel area is positioned at the top of the first subpixel area.
Specified arrangement is formed, due to the steaming used after utilizing above-mentioned evaporation mask plate that pixel is deposited with
The bore size of plating mask plate is significantly increased, and under same mask plate design criteria, goes for higher
The pixel design criteria of resolution, thus the display device realizing higher resolution makes.The present invention is not increasing
On the premise of adding process complexity, manufacturing process, by utilizing trichroism stacking, it is achieved that four colors show.From
And realize reducing the defect that mask plate plug-hole, deformation etc. bring.
The above, be only presently preferred embodiments of the present invention, not makees the present invention any pro forma
Limit.Although the present invention is disclosed above with preferred embodiment, but it is not limited to the present invention.Any
Those of ordinary skill in the art, without departing under technical solution of the present invention ambit, may utilize above-mentioned
Technical solution of the present invention is made many possible variations and modification, or amendment by the method disclosed and technology contents
Equivalent embodiments for equivalent variations.Therefore, every content without departing from technical solution of the present invention, according to this
The technical spirit of invention, to any simple modification made for any of the above embodiments, equivalent variations and modification, the most still belongs to
In the range of technical solution of the present invention is protected.
Claims (10)
1. an organic elctroluminescent device, including:
Multiple pixels, each described pixel includes the first pixel region and the second pixel region；
Described first pixel region is arranged on line n, and described second pixel region is arranged on the (n+1)th row, n
More than or equal to 1；
Described first pixel region includes that subpixel area red, white, green, described second pixel region include indigo plant
Subpixel area；
Red emission layer, described red emission layer is formed in described red sub-pixels region and white sub-pixel region；
Green emission layer, described green emission layer is formed in described green subpixel area and white sub-pixel region；
Blue emission layer, described blue emission layer is formed in described blue subpixel area and white sub-pixel region；
White emission layer, described white emission layer is formed by described red emission layer, green emission layer, blue emission layer stacking.
2. organic elctroluminescent device as claimed in claim 1, it is characterised in that each described the
In one pixel region each subpixel area put in order identical.
3. organic elctroluminescent device as claimed in claim 2, it is characterised in that each described the
Putting in order as red sub-pixels region, white sub-pixel region, green son from left to right in one pixel region
Pixel region.
4. organic elctroluminescent device as claimed in claim 1, it is characterised in that at described first picture
Between the adjacent emitting layer in element region and in each described pixel white emission layer with in blue subpixel area
Between blue emission layer, not light-emitting zone is set, described not light-emitting zone by hollow out this region anode metal or
Cathodic metal is formed.
5. organic elctroluminescent device as claimed in claim 1, it is characterised in that at described first picture
Between the adjacent emitting layer in element region and in each described pixel white emission layer with in blue subpixel area
Arranging not light-emitting zone between blue emission layer, described not light-emitting zone comes by arranging the organic membrane pattern of projection
Formed.
6. organic elctroluminescent device as claimed in claim 1, it is characterised in that described red emission layer,
Green emission layer, blue emission layer are formed by mask evaporation process.
7. organic elctroluminescent device as claimed in claim 1, it is characterised in that described first pixel
The spacing of emission layer adjacent in region is the first distance, the adjacent transmitting in described first pixel region
Layer and the second pixel region in emission layer between distance be second distance, between adjacent emission layer away from
From there is one first ultimate value, described first distance and described second distance are all higher than equal to described first limit
Value.
8. a mask plate, it is characterised in that described mask plate is used for being formed any one of claim 1 to 7 institute
Emission layer in the organic elctroluminescent device stated.
9. mask plate as claimed in claim 8, it is characterised in that comprise for forming red emission layer or green
Penetrating the first mask plate of layer, the length of described first mask plate perforate is equal to red emission layer or the height of green emission layer
Degree；The width of described first mask plate perforate adds white emission layer equal to the width of red emission layer or green emission layer
Width plus the first distance.
10. mask plate as claimed in claim 8, it is characterised in that comprise for forming described blue emission layer
Second mask plate, described second mask plate perforate includes Part I and Part II, described Part I
Width adds described equal to 2 times of described red emission layer or green emission layer width plus described first distance 2 times
The width of white emission layer, the height of described Part I is equal with the height of red emission layer or green emission layer；Institute
Stating the width width equal to white emission layer of Part II, the height of described Part II is equal to described red transmitting
The height of layer is plus second distance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310062710.2A CN103943650B (en) | 2013-02-28 | 2013-02-28 | Organic electroluminescent display device and mask plate thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310062710.2A CN103943650B (en) | 2013-02-28 | 2013-02-28 | Organic electroluminescent display device and mask plate thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103943650A CN103943650A (en) | 2014-07-23 |
| CN103943650B true CN103943650B (en) | 2016-11-23 |
Family
ID=51191243
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310062710.2A Active CN103943650B (en) | 2013-02-28 | 2013-02-28 | Organic electroluminescent display device and mask plate thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103943650B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104882465A (en) | 2015-05-27 | 2015-09-02 | 京东方科技集团股份有限公司 | Display panel, manufacturing method and display apparatus |
| CN110071217B (en) * | 2019-03-29 | 2023-12-12 | 武汉华星光电半导体显示技术有限公司 | Mask plate, manufacturing method of display panel and display device |
| WO2023197115A1 (en) * | 2022-04-11 | 2023-10-19 | Guangdong Oppo Mobile Telecommunications Corp., Ltd. | Display system |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200706061A (en) * | 2005-07-29 | 2007-02-01 | Au Optronics Corp | Full-color organic electroluminescence panel with high resolution |
| JP2007133059A (en) * | 2005-11-09 | 2007-05-31 | Epson Imaging Devices Corp | Electro-optical device, method for manufacturing the same, and electronic apparatus |
| CN101271869A (en) * | 2007-03-22 | 2008-09-24 | 株式会社半导体能源研究所 | Method for manufacturing light-emitting device |
| CN201638818U (en) * | 2009-12-31 | 2010-11-17 | 四川虹视显示技术有限公司 | OLED (Organic Light Emitting Diode) display and mask thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9041625B2 (en) * | 2010-04-21 | 2015-05-26 | Lg Display Co., Ltd. | Subpixel arrangement structure for a display device and display device |
-
2013
- 2013-02-28 CN CN201310062710.2A patent/CN103943650B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200706061A (en) * | 2005-07-29 | 2007-02-01 | Au Optronics Corp | Full-color organic electroluminescence panel with high resolution |
| JP2007133059A (en) * | 2005-11-09 | 2007-05-31 | Epson Imaging Devices Corp | Electro-optical device, method for manufacturing the same, and electronic apparatus |
| CN101271869A (en) * | 2007-03-22 | 2008-09-24 | 株式会社半导体能源研究所 | Method for manufacturing light-emitting device |
| CN201638818U (en) * | 2009-12-31 | 2010-11-17 | 四川虹视显示技术有限公司 | OLED (Organic Light Emitting Diode) display and mask thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103943650A (en) | 2014-07-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104752482B (en) | Organic LED display device | |
| CN103762224B (en) | Organic el display panel | |
| US9972663B2 (en) | Organic light emitting display device including driving sub-pixels each overlapping with multiple color sub-pixels | |
| US10490619B2 (en) | Manufacturing method of organic light emitting diode display device with first and second driving voltage lines | |
| US10170526B1 (en) | Organic light emitting diode display panel and method for manufacturing same | |
| CN105895655B (en) | Organic light emitting diode display and its manufacture method with high aperture ratio | |
| US20180366672A1 (en) | Display panels of quantum-dot light emitting diodes (qleds) and the manufacturing methods thereof | |
| KR101826432B1 (en) | Organic light emitting display device | |
| KR20220062475A (en) | Organic light emitting diode display device | |
| KR20090017910A (en) | Shadow mask and method of forming organic electroluminescene device using the same | |
| CN107346778A (en) | WOLED display panels and display device | |
| US20210210562A1 (en) | Pixel structure and fabrication method thereof, display substrate and display apparatus | |
| KR20050007159A (en) | Emissive display device | |
| KR102062912B1 (en) | Organic Light Emitting Diode Display And Method For Manufacturing The Same | |
| CN105845706A (en) | Organic light-emitting display apparatus | |
| CN106935624A (en) | Organic LED display device | |
| CN104966728B (en) | Display base plate and preparation method thereof and display device | |
| WO2022160860A1 (en) | Display substrate and related device | |
| CN107369702A (en) | A kind of OLED display panel and preparation method thereof | |
| JP2021516843A (en) | Light emitting element and its manufacturing method, display device | |
| CN103943650B (en) | Organic electroluminescent display device and mask plate thereof | |
| KR101663743B1 (en) | Organic Electroluminescent Display Device | |
| KR101908512B1 (en) | Organic electro-luminesence display panel and manufactucring method of the same | |
| KR102049241B1 (en) | Organic Electroluminescence Device and fabrication method thereof | |
| US10452098B2 (en) | Foldable display apparatus and method of manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |