CN103817810A - Silicon wafer cutting method of NTC-PV 800 silicon wafer cutting machine - Google Patents

Abstract

The invention relates to the solar photovoltaic industry, in particular to a silicon wafer cutting method of an NTC-PV 800 silicon wafer cutting machine. The main roll slot pitch of the cutting machine is changed to be 0.325 mm, and the diameter of a steel line is changed to be 0.11m; a one-way cutting process is adopted, and the process parameters are as follows: the tension of the steel line is 19N-23N, the knife feeding speed is 0.22mm/min-0.32mm/min, the speed of the steel line is 560m/min-700m/min; the line feeding distance is 70m/min-120m/min, the mortar temperature is 20 DEG C-23 DEG C, and the mortar flow rate is 60 L/min-90 L/min; the cooling water temperature is kept at 10 DEG C-12DEG C, the workshop temperature is kept at 25+/-2 DEG C; the single tool using amount of the steel line is 270km-400km, the mortar density is kept to be 1.65g/cm-1.68g/cm, cutting is started, mortar is changed once every two times of cutting, and the change amount of the mortar is controlled to be 550kg-750kg.

Description

A kind of NTC-PV800 silicon chip cutter method for cutting silicon chips

Technical field

The present invention relates to photovoltaic industry, specifically a kind of NTC-PV800 silicon chip cutter method for cutting silicon chips.

Background technology

Concerning photovoltaic industry, cost is most important, strengthens multi-wire saw new technology and improves research and development ability, and progressively reducing production costs is permanently effective lifeblood of depending on for existence of enterprise.Infiltration each link aborning reduces production costs.Process improving and reducing production costs, comprises the auxiliary material evaluation of auxiliary material, the importing of new product new technology etc.Silicon material has almost accounted for 60% in silicon chip processing cost.

Summary of the invention

Technical problem to be solved by this invention is: how to improve the piece rate of unit mass silicon rod, reduce silicon stockline and cut loss, Simultaneous Stabilization improves the yields of thin slice, thereby reduces silicon chip preparation cost.

The technical solution adopted in the present invention is: a kind of NTC-PV800 silicon chip cutter method for cutting silicon chips, carries out according to following step:

Step 1, the home roll slot pitch of revising this cutting machine is 0.325mm, steel wire diameter is 0.11m;

Step 2, adopt unidirectional cutting technique, technological parameter is: steel wire tension force: 19 N～23N, feed velocity: 0.22 mm/min～0.32mm/min, steel wire speed: 560 m/min～700m/min, line sending distance: 70 m/min～120m/min, mortar temperature: 20 ° of C～23 ° C, mortar flow: 60 l/min～90 l/min;

Step 3, cooling water temperature keeps 10 ° of C～12 ° C, and factory building temperature keeps 25 ± 2 ° of C;

Step 4, steel wire hilted broadsword consumption 270 km～400km, slurry density remains on 1.65 g/cm～1.68g/cm, starts cutting, and every cutting two cuttves are changed a mortar, and mortar replacing amount is controlled at 550 kg～750kg.

The invention has the beneficial effects as follows: the present invention has improved the piece rate of unit mass silicon rod, reduce silicon stockline and cut loss, Simultaneous Stabilization improves the yields of thin slice, thereby reduces silicon chip preparation cost.

The specific embodiment

The present invention adopts NTC-PV800 silicon chip cutter to carry out silicon chip cutting, current NTC-PV800 silicon chip cutter standard cell distance is 0.33mm, per kilogram silicon material can theoretical slice 53.43, if slot pitch be adjusted into 0.325mm can theoretical slice 54.26, slice number increases by 0.83.But can cause some row problems after adjusting standard cell distance, slot pitch reduces, in cutting process, steel wire wearing and tearing increase, too much, carrying capacity weakens in steel wire wearing and tearing, easily produces stria in silicon chip cutting process, and wear extent increases, and steel wire tensile strength weakens, easily there is broken string phenomenon.How to meet and carried out slot pitch, obtain how theoretical slice number, meet again other technological requirement simultaneously, the present invention finds that adjustment tank distance is 0.325mm, need to set according to certain technological parameter for rear, just can meet the demands, specific as follows;

Step 1, first selects a set of home roll 0.325mm slot pitch of again slotting, and it is 0.11m that steel wire diameter is set.

Step 2, adopt unidirectional cutting technique, technological parameter is: steel wire tension force: 19 N～23N, feed velocity: 0.22 mm/min～0.32mm/min, steel wire speed: 560 m/min～700m/min, line sending distance: 70 m/min～120m/min, mortar temperature: 20 ° of C～23 ° C, mortar flow: 60 l/min～90 l/min;

Step 3, cooling water temperature keeps 10 ° of C～12 ° C, and factory building temperature keeps 25 ± 2 ° of C;

Step 4, steel wire hilted broadsword consumption 270 km～400km, slurry density remains on 1.65 g/cm～1.68g/cm, starts cutting, and every cutting two cuttves are changed a mortar, and mortar replacing amount is controlled at 550 kg～750kg.

Claims (1)

1. a NTC-PV800 silicon chip cutter method for cutting silicon chips, is characterized in that: carry out according to following step:

Step 1, the home roll slot pitch of revising this cutting machine is 0.325mm, steel wire diameter is 0.11m;

Step 2, adopt unidirectional cutting technique, technological parameter is: steel wire tension force: 19 N～23N, feed velocity: 0.22 mm/min～0.32mm/min, steel wire speed: 560 m/min～700m/min, line sending distance: 70 m/min～120m/min, mortar temperature: 20 ° of C～23 ° C, mortar flow: 60 l/min～90 l/min;

Step 3, cooling water temperature keeps 10 ° of C～12 ° C, and factory building temperature keeps 25 ± 2 ° of C;

Step 4, steel wire hilted broadsword consumption 270 km～400km, slurry density remains on 1.65 g/cm～1.68g/cm, starts cutting, and every cutting two cuttves are changed a mortar, and mortar replacing amount is controlled at 550 kg～750kg.