CN103713684B - 电压基准源电路 - Google Patents
电压基准源电路 Download PDFInfo
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- CN103713684B CN103713684B CN201310698422.6A CN201310698422A CN103713684B CN 103713684 B CN103713684 B CN 103713684B CN 201310698422 A CN201310698422 A CN 201310698422A CN 103713684 B CN103713684 B CN 103713684B
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- 239000004065 semiconductor Substances 0.000 claims abstract 7
- 238000000034 method Methods 0.000 abstract description 30
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 230000014509 gene expression Effects 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002277 temperature effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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CN201310698422.6A CN103713684B (zh) | 2013-12-18 | 2013-12-18 | 电压基准源电路 |
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CN201310698422.6A CN103713684B (zh) | 2013-12-18 | 2013-12-18 | 电压基准源电路 |
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CN103713684A CN103713684A (zh) | 2014-04-09 |
CN103713684B true CN103713684B (zh) | 2016-01-20 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11867571B2 (en) * | 2021-10-01 | 2024-01-09 | Nxp B.V. | Self-turn-on temperature detector circuit |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106527572B (zh) * | 2016-12-08 | 2018-01-09 | 电子科技大学 | 一种低功耗低温漂cmos亚阈值基准电路 |
CN107272819B (zh) * | 2017-08-09 | 2018-07-20 | 电子科技大学 | 一种低功耗低温漂cmos亚阈值基准电路 |
CN107704013A (zh) * | 2017-10-25 | 2018-02-16 | 丹阳恒芯电子有限公司 | 一种物联网中的全cmos基准电路 |
CN107943196A (zh) * | 2017-10-25 | 2018-04-20 | 丹阳恒芯电子有限公司 | 超低功耗全cmos基准电路系统 |
CN107908219A (zh) * | 2017-10-25 | 2018-04-13 | 丹阳恒芯电子有限公司 | 一种应用于物联网中的ldo系统 |
CN107748586A (zh) * | 2017-10-25 | 2018-03-02 | 丹阳恒芯电子有限公司 | 一种稳压系统中的基准电路结构 |
CN113110680B (zh) * | 2021-05-28 | 2023-03-28 | 杭州米芯微电子有限公司 | 一种基准电路的启动电路和基准电路 |
CN115357085B (zh) * | 2022-08-30 | 2023-08-08 | 广东工业大学 | 一种自偏置cmos电压基准源及确定线性灵敏度及电源抑制比的方法 |
CN115437448B (zh) * | 2022-11-03 | 2023-03-24 | 苏州聚元微电子股份有限公司 | 电流源电路、基准电压电路及芯片 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101038498A (zh) * | 2006-12-28 | 2007-09-19 | 东南大学 | Cmos基准电压源 |
CN101470459A (zh) * | 2007-12-26 | 2009-07-01 | 中国科学院微电子研究所 | 低压低功耗的cmos电压基准参考电路 |
CN102073335A (zh) * | 2011-01-21 | 2011-05-25 | 西安华芯半导体有限公司 | 纯mos结构高精度电压基准源 |
CN103412604A (zh) * | 2013-07-17 | 2013-11-27 | 电子科技大学 | 金属氧化物半导体晶体管基准电压源 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100596978B1 (ko) * | 2004-11-15 | 2006-07-05 | 삼성전자주식회사 | 온도-비례 전류 제공회로, 온도-반비례 전류 제공회로 및이를 이용한 기준전류 제공회로 |
WO2006061742A2 (en) * | 2004-12-07 | 2006-06-15 | Koninklijke Philips Electronics N.V. | Reference voltage generator providing a temperature-compensated output voltage |
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2013
- 2013-12-18 CN CN201310698422.6A patent/CN103713684B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101038498A (zh) * | 2006-12-28 | 2007-09-19 | 东南大学 | Cmos基准电压源 |
CN101470459A (zh) * | 2007-12-26 | 2009-07-01 | 中国科学院微电子研究所 | 低压低功耗的cmos电压基准参考电路 |
CN102073335A (zh) * | 2011-01-21 | 2011-05-25 | 西安华芯半导体有限公司 | 纯mos结构高精度电压基准源 |
CN103412604A (zh) * | 2013-07-17 | 2013-11-27 | 电子科技大学 | 金属氧化物半导体晶体管基准电压源 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11867571B2 (en) * | 2021-10-01 | 2024-01-09 | Nxp B.V. | Self-turn-on temperature detector circuit |
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Publication number | Publication date |
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CN103713684A (zh) | 2014-04-09 |
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Effective date of registration: 20240603 Address after: 518000 A-301, office building, Shenzhen Institute of advanced technology, No. 1068, Xue Yuan Avenue, Shenzhen University Town, Shenzhen, Guangdong, Nanshan District, China Patentee after: Shenzhen shen-tech advanced Cci Capital Ltd. Country or region after: China Address before: 1068 No. 518055 Guangdong city in Shenzhen Province, Nanshan District City Xili University School Avenue Patentee before: SHENZHEN INSTITUTES OF ADVANCED TECHNOLOGY Country or region before: China |
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Effective date of registration: 20241028 Address after: Building 1, Skyworth Maker World Science and Technology City, No. 12 Gaoke Avenue, Baolong Community, Baolong Street, Longgang District, Shenzhen City, Guangdong Province 518000- A0101 Patentee after: Shenzhen Zhongke Carbon Innovation Technology Center Co.,Ltd. Country or region after: China Address before: 518000 A-301, office building, Shenzhen Institute of advanced technology, No. 1068, Xue Yuan Avenue, Shenzhen University Town, Shenzhen, Guangdong, Nanshan District, China Patentee before: Shenzhen shen-tech advanced Cci Capital Ltd. Country or region before: China |