CN103367625A - Obliquely-tangential gallium arsenide single crystal photo-thermal detector - Google Patents

Abstract

The invention provides an obliquely-tangential gallium arsenide single crystal photo-thermal detector which is composed of obliquely-tangential gallium arsenide single crystal wafers, a metal copper heat sink and a metal support sequentially, wherein the obliquely-tangential gallium arsenide single crystal wafers are bonded through heat conducting glue. Two symmetrical metal electrodes are arranged on the upper surfaces of the obliquely-tangential gallium arsenide single crystal wafers and serve as voltage signal output ends, and the voltage signal output ends of the obliquely-tangential gallium arsenide single crystal wafers are connected with the input ends of a voltmeter through electrode leads. The obliquely-tangential gallium arsenide single crystal photo-thermal detector has the advantages of being easy to prepare, low in cost, high in response sensitivity and capable of achieving full-wave band spectrum detection and all kinds of thermal radiation detection.

Description

A Beveled Gallium Arsenide Single Crystal Optical and Thermal Detector

technical field

The invention relates to a low-cost, high-sensitivity, wide-band light and heat detector manufactured by obliquely cutting gallium arsenide single crystal slices, and belongs to the technical field of light and heat detector preparation.

Background technique

When the upper surface of the beveled gallium arsenide single crystal slice is heated by a light source or a heat source, a longitudinal temperature difference ΔT will be generated on the upper and lower surfaces of the slice. A transverse voltage signal is generated at the left and right ends of the surface, and the amplitude of the voltage signal is proportional to the difference ΔS of the Seebeck coefficients in the ab-axis and c-axis directions of gallium arsenide, the temperature difference ΔT and the bevel angle α. In recent years, new photo-thermal detectors made by using the transverse pyroelectric effect of materials have attracted much attention. Compared with traditional photonic photodetectors, optical and thermal detectors based on the transverse pyroelectric effect are cheap, have good signal-to-noise ratios, do not require refrigeration, do not require bias voltage, and can realize full-spectrum detection and various thermal radiation detection. .

At present, the materials used to prepare such new types of photo-thermal detectors often use layered cobalt oxide films represented by calcium cobalt oxide, high-temperature superconducting films represented by yttrium barium copper oxide, and lanthanum calcium manganese oxide films. giant magnetoresistive films and oxide single crystal materials with perovskite structures represented by strontium titanate and lanthanum aluminate. However, the detection sensitivity of the above-mentioned thin film detectors to continuous light and thermal radiation is very low, the preparation process is complicated, the cost is high, and the damage threshold is low, so it is not suitable for large-scale commercial promotion. However, the perovskite oxide single crystal material can only detect radiation in the ultraviolet band and cannot detect thermal radiation, and its cost is also high. Therefore, it is very necessary to invent a new type of detector with low cost, simple preparation process, high damage threshold, high detection sensitivity, and can realize both light and heat detection.

Contents of the invention

The technical problem to be solved by the present invention is to provide a novel oblique-cut gallium arsenide single crystal optical and thermal detector with low cost, simple preparation process, high damage threshold, high detection sensitivity and capable of both optical and thermal detection.

The technical scheme that solves the above-mentioned technical problem is:

This oblique-cut gallium arsenide single crystal optical and thermal detector is composed of oblique-cut gallium arsenide single-crystal slices bonded with heat-conducting adhesive, metal copper heat sink and metal support in turn, on the bevel-cut gallium arsenide single-crystal thin slices Two symmetrical metal electrodes are arranged on the surface as voltage signal output terminals, and the voltage signal output terminals of the beveled gallium arsenide single crystal slice are connected with the input terminals of the voltmeter by electrode leads.

For the beveled gallium arsenide single crystal photo-thermal detector, the range of the bevel angle α of the beveled gallium arsenide single crystal sheet is 0°<α<90°, where α is the c-axis direction of the sheet and The angle between the normal direction of the slice plane.

For the obliquely cut gallium arsenide single crystal photo-thermal detector, the size of the obliquely cut gallium arsenide single crystal sheet (2) is 5×3mm ² , 5×5mm ² or 10×5mm ² , and the thickness is 0.2 -2mm, the conductivity type is N-type or P-type, and the carrier concentration is 10 ¹⁶ -10 ¹⁹ /cm ³ .

In the obliquely cut gallium arsenide single crystal light and heat detector, the shape of the two metal electrodes is rectangular or circular, the distance between the electrodes is 3-8 mm, and the electrode materials are metal Pt, Au, Ag , Al or In, prepared by thermal evaporation, magnetron sputtering or pulsed laser deposition on the upper surface of the chamfered gallium arsenide single crystal slice in the chamfering direction.

For the obliquely cut gallium arsenide single crystal photo-thermal detector, the thermal conductivity of the heat-conducting adhesive should be greater than 0.6W/mK.

In the obliquely cut gallium arsenide single crystal light and heat detector, the metal copper heat sink is an oxygen-free copper sheet with a thermal conductivity greater than 400W/mK.

In the obliquely cut gallium arsenide single crystal light and heat detector, the electrode leads are thin wires made of Au, Ag or Cu, with a diameter of 0.01-0.2mm.

The gallium arsenide single crystal optical and thermal detector provided by the invention has the advantages of simple preparation, low cost, high damage threshold, high detection sensitivity, and can realize full-band spectral detection and various thermal radiation detections.

Description of drawings

Fig. 1 is a schematic diagram of the structure of the obliquely cut gallium arsenide single crystal photo-thermal detector of the present invention.

The numbers in the figure are as follows: 1. Metal copper heat sink 2. Beveled gallium arsenide single crystal slice

3. First electrode 4, second electrode 5, first electrode lead 6, second electrode lead

7. Voltmeter 8. Light source or heat source 9. Metal bracket 10. Bevel angle α of sheet

2 and 3 are schematic top view structural diagrams of the two electrode arrangement methods in FIG. 1 .

Figure 4 is the voltage signal response diagram of the obliquely cut GaAs single crystal photo-thermal detector to the output laser (wavelength: 405nm, spot radius: 1mm) of the CW laser.

Figure 5 is the voltage signal response diagram of the obliquely cut GaAs single crystal photo-thermal detector to the output laser (wavelength: 532nm, spot radius: 1mm) of the CW laser.

Figure 6 is the voltage signal response diagram of the obliquely cut GaAs single crystal photo-thermal detector to the output laser (wavelength: 980nm, spot radius: 1mm) of the continuous laser.

Figure 7 is the voltage signal response diagram of the obliquely cut GaAs single crystal photo-thermal detector to the output laser (wavelength: 10.6 μm, spot radius: 1 mm) of the continuous laser.

Figure 8 is the voltage signal response diagram of the oblique-cut GaAs single crystal photo-thermal detector to the output sunlight (wavelength: 400nm-1100nm, power density 1000W/cm ² ) of the solar simulator.

Figure 9 is the voltage signal response graph of the obliquely cut GaAs single crystal photo-thermal detector to the output heat of a constant temperature heat source at 200°C (the distance from the heat source to the detector is 5mm).

Detailed ways

As shown in Fig. 1, the present invention consists of chamfered gallium arsenide single crystal slices, metal electrodes, metal copper heat sinks, thermal conductive glue and metal wires.

The metal copper heat sink 1 is an oxygen-free metal copper plate with a length and width of 15×15 mm ² and a thickness of 1 mm. The bevel angle α of the chamfered gallium arsenide single crystal slice 2 is in the range of 0°<α<90°. The chamfered gallium arsenide single crystal slice 2 is pasted on the central position of the metal copper heat sink 1 with thermal silica gel, and then the copper heat sink 1 is physically fixed or pasted on the metal bracket 9 .

There are two metal electrodes on the surface of the single crystal sheet as voltage signal output terminals, which are respectively the first electrode 3 and the second electrode 4, which can be prepared by conventional thermal evaporation, magnetron sputtering or pulsed laser deposition techniques. The positions of the two electrodes are strictly left-right symmetrical with respect to the center line of the sheet, the distance between them is 3-8mm, and the shape is rectangular or circular. The electrode material can be selected from metals such as Pt, Au, Ag, Al or In. The output ends of the two electrode voltage signals are respectively connected to the input end of the voltmeter 7 through electrode leads, and the electrode leads can be thin wires of Au, Ag or Cu with a diameter of 0.01-0.2 mm.

Below are 6 embodiments of the present invention:

Embodiment 1: Oblique-cut gallium arsenide single crystal optical and thermal detector detects 405nm continuous light.

1. N-type silicon-doped gallium arsenide single crystal slices (size 10×5mm ² , thickness 0.3mm, carrier concentration 10 ¹⁸ /cm ³ ) obliquely cut at 10 degrees by known thermal evaporation method Prepare two silver electrodes on the surface, the electrodes are rectangular (1×5mm ² ), and the distance between the electrodes is 8mm;

2. Use conductive silver glue to stick two copper wires with a diameter of 0.1mm on the two silver electrodes respectively as the lead wires of the two electrodes;

3. Connect the other end of the two electrode leads to the voltmeter as the output voltage signal test end;

4. Select a voltmeter with an accuracy of 0.012%, and use the above-mentioned gallium arsenide single crystal photothermal detector to measure the voltage signal output of the continuous laser (output wavelength is 405nm, spot radius is 1mm) irradiated on the detector.

Fig. 4 is a waveform diagram of the output voltage signal generated when the 405nm continuous laser is irradiated on the surface of the detector recorded by the voltmeter. It can be seen that when the laser power irradiated on the sheet is 50mW, the amplitude of the output voltage signal is 4.3mV, and the detection sensitivity is as high as 0.086mV/mW.

Embodiment 2: Oblique-cut gallium arsenide single crystal optical and thermal detector detects 532nm continuous light.

1. With step 1-4 in embodiment 1;

Fig. 5 is a waveform diagram of the output voltage signal generated when the 532nm continuous laser is irradiated on the surface of the detector recorded by the voltmeter. It can be seen that when the laser energy irradiated on the sheet is 50mW, the amplitude of the output voltage signal is as high as 2.8mV, and the light and heat detector has high detection sensitivity to visible light.

Embodiment 3: Oblique-cut gallium arsenide single crystal optical and thermal detector detects 980nm infrared continuous light.

1. Use the known thermal evaporation method to obliquely cut the surface of N-type silicon-doped GaAs single crystal wafer (size 10×5mm ² , thickness 0.3mm, carrier concentration 10 ¹⁸ /cm ³ ) at 5 degrees Prepare two In electrodes, the electrodes are rectangular (1×5mm ² ), and the distance between the electrodes is 8mm;

2. Use solder to weld two copper wires with a diameter of 0.1mm on the two In electrodes respectively as the leads of the two electrodes;

3. Connect the other end of the two electrode leads to the voltmeter as the output voltage signal test end;

4. Select a voltmeter with an accuracy of 0.012%, and use the above-mentioned obliquely cut gallium arsenide single crystal photothermal detector to measure the voltage signal output of the continuous laser (output wavelength is 980nm, spot radius is 1mm) irradiated on the detector.

Fig. 6 is a waveform chart of the output voltage signal generated when the 980nm continuous laser is irradiated on the surface of the detector recorded by the voltmeter. It can be seen that when the laser power irradiated on the surface of the sheet is 50mW, the output voltage signal reaches 7.9mV, and the light and heat detector has high detection sensitivity to near-infrared.

Embodiment 4: Oblique-cut gallium arsenide single crystal optical and thermal detectors detect 10.6 μm far-infrared continuous light.

1. Use the known thermal evaporation method to obliquely cut the surface of N-type silicon-doped GaAs single crystal wafer (size 5×3mm ² , thickness 0.3mm, carrier concentration 10 ¹⁸ /cm ³ ) at 10° Prepare two Au electrodes, the electrodes are rectangular (1×3mm ² ), and the distance between the electrodes is 3mm;

2. Use solder to weld two silver wires with a diameter of 0.05mm on the two Au electrodes respectively as the lead wires of the two electrodes;

3. Connect the other end of the two electrode leads to the voltmeter as the output voltage signal test end;

4. Select a voltmeter with an accuracy of 0.012%, and use the above-mentioned obliquely cut gallium arsenide single crystal photothermal detector to measure the voltage signal output of the continuous laser (output wavelength is 10.6μm, spot radius is 1mm) irradiated on the detector.

Fig. 7 is a waveform chart of the output voltage signal generated when the 10.6 μm continuous laser is irradiated on the surface of the detector recorded by the voltmeter. It can be seen that when the laser power irradiated on the surface of the sheet is 150mW, the output voltage generated at both ends of the sheet is 36.2mV, and the optical and thermal detector has high detection sensitivity to far-infrared light.

Embodiment 5: Oblique-cut gallium arsenide single crystal optical and thermal detectors detect polychromatic light output from a solar simulator.

1. Use the known thermal evaporation method to obliquely cut the surface of N-type silicon-doped GaAs single crystal wafer (size 10×5mm ² , thickness 0.5mm, carrier concentration 10 ¹⁸ /cm ³ ) at 10° Prepare two Al electrodes, the electrodes are rectangular (1×5mm ² ), and the distance between the electrodes is 8mm;

2. Use solder to weld two silver wires with a diameter of 0.05mm on the two Al electrodes as the lead wires of the two electrodes;

3. Connect the other end of the two electrode leads to the voltmeter as the output voltage signal test end;

4. Select a voltmeter with an accuracy of 0.012%, and use the above-mentioned gallium arsenide single crystal light and heat detectors to measure the polychromatic light irradiation output by the solar simulator (the output wavelength range is 400nm-1100nm, and the power density is 1000W/cm ² ). Voltage signal output on the detector.

Fig. 8 is a waveform diagram of the output voltage signal generated when the polychromatic light output by the solar simulator is irradiated on the surface of the detector recorded by the voltmeter. It can be seen that when the simulated sunlight shines on the surface of the sheet, the output voltage generated at both ends of the sheet is 9.1mV, and the light and heat detector has high detection sensitivity to sunlight.

Embodiment 6: Oblique cut gallium arsenide single crystal optical and thermal detectors detect thermal radiation.

1. Use the known thermal evaporation method to obliquely cut the surface of N-type silicon-doped GaAs single crystal wafer (size 10×5mm ² , thickness 0.3mm, carrier concentration 10 ¹⁸ /cm ³ ) at 5 degrees Prepare two Pt electrodes, the electrodes are rectangular (1×5mm ² ), and the distance between the electrodes is 8mm;

2. Use solder to weld two silver wires with a diameter of 0.05mm on the two Pt electrodes respectively as the lead wires of the two electrodes;

3. Connect the other end of the two electrode leads to the voltmeter as the output voltage signal test end;

4. Select a voltmeter with an accuracy of 0.012%, and use the above-mentioned obliquely cut gallium arsenide single crystal light and heat detector to measure the voltage signal output of a 200°C constant temperature heat source placed vertically above the detector surface (the distance from the heat source is 5mm).

Fig. 9 is a waveform diagram of the output voltage signal generated when the constant temperature heat source is vertically placed on the surface of the detector recorded by the voltmeter. It can be seen that when the heat source is placed above the sheet, the output voltage generated at both ends of the sheet is 2.1mV, and the light and heat detector has high detection sensitivity to thermal radiation.

The examples listed in the present invention are intended to further illustrate the off-cut GaAs single crystal photo-thermal detector and its preparation method, without any limitation to the scope of the present invention.

Claims (7)

1. cut sth. askew arsenide gallium monocrystal light, thermal detector, it is characterized in that: the arsenide gallium monocrystal thin slice (2) of cutting sth. askew that it is bondd by heat-conducting glue successively, metallic copper is heat sink, and (1) and metallic support (9) form, the metal electrode that two symmetries is set at the arsenide gallium monocrystal thin slice upper surface of cutting sth. askew is as voltage signal output end, is connected with voltmeter (7) input with the contact conductor arsenide gallium monocrystal foil voltage signal output part of will cutting sth. askew.

2. arsenide gallium monocrystal light, the thermal detector of cutting sth. askew according to claim 1, it is characterized in that: the scope of the mis-cut angle α of the described arsenide gallium monocrystal thin slice (2) of cutting sth. askew is 0 °＜α＜90 °, and α is the angle of thin slice c-axis direction and thin slice plane normal direction.

3. arsenide gallium monocrystal light, the thermal detector of cutting sth. askew according to claim 1, it is characterized in that: described arsenide gallium monocrystal thin slice (2) size of cutting sth. askew is 5 * 3mm ², 5 * 5mm ²Or 10 * 5mm ², thickness is 0.2-2mm, and conduction type is N-type or P type, and carrier concentration is 10 ¹⁶-10 ¹⁹/ cm ³

4. arsenide gallium monocrystal light, the thermal detector of cutting sth. askew according to claim 1, it is characterized in that: described two metal electrodes be shaped as rectangle or circle, spacing between the electrode is 3-8mm, electrode material is Pt metal, Au, Ag, Al or In, adopts thermal evaporation, magnetron sputtering or pulse laser sediment method to be prepared in the arsenide gallium monocrystal thin slice (2) of the cutting sth. askew direction upper surface of cutting sth. askew.

5. arsenide gallium monocrystal light, the thermal detector of cutting sth. askew according to claim 1, it is characterized in that: the thermal conductivity of described heat-conducting glue should be greater than 0.6W/mK.

6. arsenide gallium monocrystal light, the thermal detector of cutting sth. askew according to claim 1 is characterized in that: described metallic copper is heat sink to be the anaerobic copper sheet of thermal conductivity greater than 400W/mK.

7. arsenide gallium monocrystal light, the thermal detector of cutting sth. askew according to claim 1, it is characterized in that: described contact conductor is the thin wire of Au, Ag or Cu material, diameter is 0.01-0.2mm.

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