CN102408679B - Epoxy resin composite material - Google Patents
Epoxy resin composite material Download PDFInfo
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- CN102408679B CN102408679B CN 201110251205 CN201110251205A CN102408679B CN 102408679 B CN102408679 B CN 102408679B CN 201110251205 CN201110251205 CN 201110251205 CN 201110251205 A CN201110251205 A CN 201110251205A CN 102408679 B CN102408679 B CN 102408679B
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- epoxy resin
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Abstract
The invention provides an epoxy resin composite material, comprising epoxy resin and powder material, wherein the mass proportion of the epoxy resin to the powder material is 9: 1-6: 4; the coefficient of thermal expansion of the powder material is 0.1-3.5 PPM, and mean particle size D50 thereof is 0.1-10 microns. The epoxy resin composite material provided by the invention can obviously lower edge breakage rate, crack rate and gap rate during the production process of the silicon wafer, and obviously raise the yield of production of silicon wafer, and has excellent economic benefit and market prospect.
Description
Technical field
The present invention relates to chemical field, particularly a kind of epoxy resin composite material.
Background technology
Along with the minimizing day by day and the environmental degradation of fossil energy is on the rise, photovoltaic generation becomes the focus that people pay close attention to gradually as a kind of cleaning, renewable energy source, and obtains using widely gradually in developed countries such as America and Europes.Wherein, crystalline silicon photovoltaic is because its cost is low, technology maturation and become main photovoltaic power generation technology.
The crystalline silicon photovoltaic industrial chain comprises each link of silicon raw material-silicon chip-battery-assembly-system.Wherein, the silicon chip manufacturing comprises crystal growth, multi-thread cut mechanically, and the cleaning of coming unstuck detects this plurality of processes of packing.Because silicon crystal need be adhesively fixed on the cutting bed and cuts, so its production process needs come unstuck behind the first viscose glue, be about to glue and be coated on the glass substrate, after silico briquette is bonded on the glass substrate, send slicing machine cutting at last.
The glue of using in the silicon chip production; Mostly be that epoxy resin adds a certain proportion of solidifying agent; Epoxy resin has good physical mechanics and electrical insulation capability, with the good adhesive property of various materials and use technological flexibility; Therefore epoxy resin is widely used in preparing coating, matrix material, mould material, glue paste, moulding material and injection moulding material, and wherein electronic packaging composite material is the epoxy resin main application fields.
The coefficient of expansion of epoxy resin is 30～90PPM, and the coefficient of expansion of silicon chip is merely 3.5PPM, and both differ an one magnitude; In the cold and hot process of silicon chip cutting and cleaning, glue and silicon chip all will be out of shape, but the shrinkage degree of glue is much larger than the contraction of silicon chip; Therefore very easily cause on the silicon chip mucilage glue surface silicon materials among a small circle to tear; That often sees in the photovoltaic silicon chip production process that Here it is collapses defectives such as limit, unfilled corner, if tear serious; Will cause fragment from the crackle of silicon chip mucilage glue surface formation depth, greatly influence yield and cost that silicon chip is produced.Therefore, thus the coefficient of thermal expansion that changes epoxy resin glue reduce silicon chip to collapse defectives such as limit, unfilled corner be a problem demanding prompt solution.
Have in the prior art and in epoxy resin glue, add the report that inorganic materials reduces the epoxy resin glue coefficient of expansion; But these reports are mainly seen in the electronic package material field; Most of report all only considers to add the coefficient of expansion and the formability of epoxy resin glue after the inorganic materials; The amount that adds inorganic materials is a standard with the coefficient of expansion of epoxy resin mainly, and the amount of the inorganic materials of adding is easier to confirm; And in the silicon chip production, change epoxy resin glue and also need consider performances such as the viscose property of glue, set time to guarantee that silicon chip does not come off, the amount that adds inorganic materials is a standard with the silicon chip yield of producing, and confirms than difficult.In addition; In the material package field; The thickness of semiconductor chip is about 500 microns, and the thickness of solar energy-level silicon wafer is merely 120 or 160 microns, and the heat resistanceheat resistant expansible ability force rate solar energy-level silicon wafer of semiconductor chip is strong; And also have the process of a polishing during semi-conductor silicon chip is produced, can further discharge stress.To sum up; The adjusting of the epoxy resin glue coefficient of expansion is comparatively simple in the material package field; And the adjusting of the epoxy resin glue coefficient of expansion is difficult in the silicon chip production, and also need take all factors into consideration other many factors, can not simply use for reference the method for regulating epoxy resin glue in the material package field.
At present, also in epoxy resin glue, do not add powder body material at the silicon chip production field and collapse the report of defectives such as limit, unfilled corner to reduce silicon chip.
Summary of the invention
In order to address the above problem; The invention provides a kind of epoxy resin composite material, it comprises epoxy resin and powder body material, and the quality proportioning of epoxy resin and powder body material is 9: 1-6: 4; The thermal expansivity of said powder body material is 0.1-3.5PPM, and mean particle size D 50 is the 0.1-10 micron; The present invention makes qualification to the coefficient of expansion and the granularity of powder body material in this epoxy resin composite material; To guarantee that epoxy resin glue matrix material provided by the invention both can reduce the coefficient of expansion of glue; Can guarantee other character of glue again; As, viscose property and set time, reach and reduce the purpose that silicon chip collapses limit rate, crackle rate and breach rate.
Wherein, the quality proportioning of said epoxy resin and powder body material is 7: 3.
Wherein, said epoxy resin is the glycidyl ether based epoxy resin.Further, said glycidyl ether based epoxy resin is a bisphenol A type epoxy resin.
The coefficient of expansion of said powder body material is 0.3～0.5PPM, and mean particle size D 50 is 5 microns.
Wherein, described powder body material is a fused quartz powder.
Wherein, said epoxy resin composite material also comprises solidifying agent.
Wherein, said solidifying agent is a polythiol.
The present invention also provides the purposes of above-mentioned any one epoxy resin composite material in silicon chip is produced.
Epoxy resin composite material provided by the invention can significantly reduce the limit rate that collapses, crackle rate and the breach rate of silicon chip in the silicon chip production process, can significantly improve the yield that silicon chip is produced, and good economic benefit and market outlook are arranged.
Obviously, according to foregoing of the present invention,,, can also make modification, replacement or the change of other various ways not breaking away under the above-mentioned basic fundamental thought of the present invention prerequisite according to the ordinary skill knowledge and the customary means of this area.
Below, foregoing of the present invention is remake further detailed description through the embodiment of embodiment form.But should this be interpreted as that the scope of the above-mentioned theme of the present invention only limits to following instance.All technology that realizes based on foregoing of the present invention all belong to scope of the present invention.
Description of drawings
Fig. 1 silicon chip preparation flow synoptic diagram
Embodiment
The proportioning screening experiment of embodiment 1 epoxy resin glue and fused quartz powder
1, experiment material: epoxy resin glue is happy safe 3382 the AB two-pack glue of Henkel KGaA; Wherein, A glue is glycidyl ether based epoxy resin glue, and B glue is the polythiol solidifying agent, and the powder body material of adding is a fused quartz powder; The coefficient of expansion of this fused quartz powder is 0.4PPM, and mean particle size D 50 is 5 microns.
Their proportioning is as shown in table 1:
The proportioning of table 1 epoxy resin glue and fused quartz powder
| Additives ratio | A glue weight (g) | Fused quartz powder weight (g) | B glue weight (g) |
| 10％ | 22.5 | ?2.5 | 25 |
| 30％ | 17.5 | ?7.5 | 25 |
| 40％ | 15 | ?10 | 25 |
2, experimental technique
The silicon chip manufacturing processed is as shown in Figure 1, and wherein, the viscose glue process comprises the steps:
(1) claims the fused quartz powder and the A glue of corresponding weight by proportioning, earlier the two stirred that guaranteeing to mix the back color is bright red;
(2) add the B glue of corresponding weight then, fully stir, the about 2min of churning time mixes glue color pinkiness afterwards;
(3) be coated in surface cleaning, drying, coarse on glass rapidly and uniformly, the running time must be less than 10min;
(4) carry out that silicon chip is bonding, briquetting and solidification process, must cut fully set time greater than 6h.
3, experimental result
Experimental result is seen table 2:
Table 2 different ratios additive is to the influence of fraction defective
| Fraction defective | Collapse the limit rate | The crackle rate | The breach rate |
| Contrast (no fused quartz powder) | 1.45％ | 3.03％ | 1.75％ |
| 10% fused quartz powder | 0.45％ | 2.65％ | 0.36％ |
| 30% fused quartz powder | 0.80％ | 0.43％ | 0.72％ |
| 40% fused quartz powder | 0.35％ | 1.35％ | 0.29％ |
Table 3 different ratios additive is to the influence of fraction defective
Collapse limit, crackle and breach and be in the silicon chip production process three kinds common bad, the fragmentation rate of later stage manufacture of solar cells is had very big influence.Effectively these three kinds of fraction defectives of control not only help the raising that silicon chip is produced yield, also help the reduction of fragmentation rate in the battery production.
The present domestic same industry all collapses fraction defectives such as limit, crackle and breach in effort control; If certain improvement can effectively reduce three kinds of common bad any fraction defectives more than 0.5% and keep steady state; Then each slice processing (calculating with 4480/cutter) can increase by 22.4 of excellent silicon chips, and this improvement is exactly effective.2-3 can know by table; Behind the additive that adds 10-40%, technical scheme provided by the invention can effectively reduce the fraction defective that collapses limit, crackle and breach, and wherein the rate of descent of the bad item of 30% fused quartz powder is all greater than 0.5%; And three fraction defective sums are 4.28%; Then each slice processing (calculating with 4480/cutter) can increase about 192 of excellent silicon chip, and good economic benefits is arranged, and improvement of the present invention is very effective.
Simultaneously; Non-linear relation between the amount of additive and the silicon chip fraction defective; Explain that the silicon chip fraction defective is not only relevant with the coefficient of expansion; With other many factors relation is arranged also, like the compatibility of additive and epoxy resin, those skilled in the art are difficult to obtain the optimal dose of additive through simple experiment.The present invention goes back the epoxy resin glue type and has carried out experiment screening, experimental result show the glycidyl ether based epoxy resin particularly bisphenol A type epoxy resin compare other epoxy resin glues and can more effectively reduce the silicon chip fraction defective.
To sum up, experiment proof epoxy resin composite material provided by the invention can significantly reduce the limit rate that collapses, crackle rate and the breach rate of silicon chip in the silicon chip production process, can significantly improve the yield that silicon chip is produced, and good economic benefit and market outlook are arranged.
Claims (2)
1. epoxy resin composite material; It is characterized in that: it comprises epoxy resin and powder body material; The quality proportioning of epoxy resin and powder body material is 9:1-6:4, and the thermal expansivity of said powder body material is 0.1-3.5PPM, and mean particle size D 50 is the 0.1-10 micron;
Said epoxy resin is the glycidyl ether based epoxy resin;
Described powder body material is a fused quartz powder;
Said epoxy resin composite material also comprises solidifying agent; Said solidifying agent is a polythiol.
2. epoxy resin composite material according to claim 1 is characterized in that: the quality proportioning of said epoxy resin and powder body material is 7:3.
3. epoxy resin composite material according to claim 1 is characterized in that: said glycidyl ether based epoxy resin is a bisphenol A type epoxy resin.
4. epoxy resin composite material according to claim 1 is characterized in that: the thermal expansivity of said powder body material is 0.3-0.5PPM, and mean particle size D 50 is 5 microns.
5. the purposes of described any one epoxy resin composite material of claim 1-4 in silicon chip is produced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110251205 CN102408679B (en) | 2011-08-29 | 2011-08-29 | Epoxy resin composite material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110251205 CN102408679B (en) | 2011-08-29 | 2011-08-29 | Epoxy resin composite material |
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| Publication Number | Publication Date |
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| CN102408679A CN102408679A (en) | 2012-04-11 |
| CN102408679B true CN102408679B (en) | 2012-12-26 |
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| CN 201110251205 Expired - Fee Related CN102408679B (en) | 2011-08-29 | 2011-08-29 | Epoxy resin composite material |
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| CN113072798A (en) * | 2021-05-11 | 2021-07-06 | 无锡协芯半导体科技有限公司 | Epoxy resin composite material and preparation method thereof |
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| JP2864584B2 (en) * | 1989-12-05 | 1999-03-03 | 日立化成工業株式会社 | Epoxy resin composition for semiconductor and method for manufacturing semiconductor device |
| JPH1160901A (en) * | 1997-08-18 | 1999-03-05 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| JP2000169677A (en) * | 1998-12-04 | 2000-06-20 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor apparatus |
| JP3973138B2 (en) * | 2002-01-21 | 2007-09-12 | 住友ベークライト株式会社 | Epoxy resin composition for optical semiconductor encapsulation and optical semiconductor device |
| JP3862001B2 (en) * | 2002-03-18 | 2006-12-27 | 信越化学工業株式会社 | Liquid epoxy resin composition for wafer mold and semiconductor device using the same |
| WO2005056675A1 (en) * | 2003-11-21 | 2005-06-23 | Lord Corporation | Dual-stage wafer applied underfills |
| WO2006028001A1 (en) * | 2004-09-08 | 2006-03-16 | Toray Industries, Inc. | Optical wiring resin composition and photo-electric composite wiring board |
| JP4935670B2 (en) * | 2005-03-25 | 2012-05-23 | 住友ベークライト株式会社 | Semiconductor device, resin composition for buffer coating, resin composition for die bonding, and resin composition for sealing |
| CN101689518A (en) * | 2007-07-11 | 2010-03-31 | 日立化成工业株式会社 | Adhesive for circuit member connection |
| KR101641608B1 (en) * | 2008-11-25 | 2016-07-21 | 로오드 코포레이션 | Methods for protecting a die surface with photocurable materials |
| US8852734B2 (en) * | 2009-10-14 | 2014-10-07 | Sumitomo Bakelite Company, Ltd. | Epoxy resin composition, prepreg, metal-clad laminate, printed wiring board and semiconductor device |
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