CN101350323A - Solder bump forming method - Google Patents
Solder bump forming method Download PDFInfo
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- CN101350323A CN101350323A CNA2008101307670A CN200810130767A CN101350323A CN 101350323 A CN101350323 A CN 101350323A CN A2008101307670 A CNA2008101307670 A CN A2008101307670A CN 200810130767 A CN200810130767 A CN 200810130767A CN 101350323 A CN101350323 A CN 101350323A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
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- Microelectronics & Electronic Packaging (AREA)
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
A solder bump forming method of carrying out a reflow treatment over a conductive ball mounted on a plurality of pads, thereby forming a solder bump, includes a metal film forming step of forming a metal film capable of chemically reacting to a tackifying compound on the pads, an organic sticking layer forming step of causing a solution containing the tackifying compound to chemically react to the metal film, thereby forming an organic sticking layer on the metal film, and a conductive ball mounting step of supplying the conductive ball on the pads having the organic sticking layer formed thereon, thereby mounting the conductive ball on the pads through the metal film.
Description
Technical field
The present invention relates to form the method for solder bump, more particularly, the method that relates to following formation solder bump: distributing board, encapsulation (for example wafer-level package) or substrate (for example semiconductor chip) are provided with a plurality of pads, conducting sphere is installed on each pad in described a plurality of pad, thereby forms solder bump.
Background technology
Fig. 1 is the cutaway view that the substrate of prior art is shown.
With reference to figure 1, the substrate 10 of prior art has: base main body 11, through-electrode 12, a plurality of pads 13 and 16, solder mask 14 and 17 and solder bump 19.Below to be described as the distributing board of semiconductor packages example as substrate 10.
Through-electrode penetrates base main body 11.The lower end of through-electrode 12 is connected with pad 13, and the upper end of through-electrode 12 is connected with pad 16.Through-electrode 12 is used to make pad 13 to be electrically connected with pad 16.
The salient point that solder bump 19 is arranged on pad 16 forms among the regional 16A.Solder bump 19 is as the splicing ear of substrate 10.For example, solder bump 19 is electrically connected with electronic component (for example semiconductor chip).
Fig. 2-Fig. 7 is the view that the solder bump formation method of prior art is shown.In Fig. 2-Fig. 7, has identical Reference numeral with substrate 10 components identical of prior art shown in Figure 1.
The method of the formation solder bump of prior art is described below with reference to Fig. 2-Fig. 7.At first, in step shown in Figure 2, preparation has the base material 21 that a plurality of substrates form regional J, and substrate 10 will be formed on described substrate and form among the regional J, and forms through-electrode 12, a plurality of pad 13 and 16 and solder mask 14 and 17 by known method on base material 21.In the step shown in Figure 7 that will describe hereinafter,, thereby become base main body shown in Figure 1 11 along cutting position K cutting base material 21.
Next, in step shown in Figure 3, form solder flux 23 and form regional 16A with the salient point that covers pad 16.More particularly, as shown in figure 37, under the opening portion 23B that forms mask 23A at solder flux and the state that the opening portion 17A of solder mask 17 aims at, 23A is arranged on the solder mask 17 solder flux formation mask.Utilizing solder flux bringing device (not shown) by solder flux formation mask 23A solder flux to be applied to salient point forms on the regional 16A.
Subsequently, in step shown in Figure 4, structure shown in Figure 3 is fixed on the operating desk 25 of conducting sphere erecting device 24, and the conducting sphere of (being used for the salient point that conducting sphere 28 is installed in pad 16 is respectively formed hole on the regional 16A) is installed mask 26 to have a plurality of conducting sphere installing hole 26A arranging above the structure shown in Figure 3.Then, the top supply conducting sphere 28 of mask 26 is installed, and is made conducting sphere that mask 26 and operating desk 25 swings are installed, so that each salient point that is formed with solder flux 23 that makes conducting sphere 28 be installed in pad 16 forms on the regional 16A from conducting sphere.
Then, in step shown in Figure 5, take off structure shown in Figure 4 from the operating desk 25 of conducting sphere erecting device 24.After this, in step shown in Figure 6, conducting sphere shown in Figure 5 28 is carried out reflow treatment, thereby form formation solder bump 19 on the regional 16A at the salient point of pad 16.
After this, in step shown in Figure 7, along cutting position K cutting structure shown in Figure 6.Thereby, made substrate 10 (for example, seeing Japanese Patent Application Publication No.11-297886).
Yet, in the process of formation solder flux shown in Figure 37, there is such problem, that is: solder flux forms the opening portion 23B of mask 23A and the mutual misalignment of opening portion 17A of solder mask 17, and formation is not applied to the lip-deep solder flux that salient point forms the solder flux on the regional 16A or is applied to solder mask 17.The pad 16 of conducting sphere 28 is not installed above having produced in this case.In addition, also have such problem, that is: conducting sphere 28 is installed on the part except that pad 16, fusing and flowing out when reflow treatment then, thus for example cause between the adjacent solder balls problem such as short circuit.
Even solder flux forms the opening portion 23B of mask 23A and correctly aims at the opening portion 17A of solder mask 17, also can be because of the viscosity of the solder flux low solder flux that causes leaks into slit between solder flux formation mask 23A and the solder mask 17 and the slit between solder mask 17 and the base material 21.Therefore, have such problem, that is: a part of solder flux is bonded on the surface of solder mask 17, thereby the zone that applies solder flux enlarges, thereby exists a plurality of conducting spheres to be installed in a possibility on the pad.
In addition, in the process of making substrate 10, for each substrate 10 of making, the position or the size of the pad 16 on the base main body 11 and the opening portion of solder mask 17 (being used to expose the opening portion that salient point forms regional 16A) all can change.
On the other hand, the conducting sphere installing hole 26A that is arranged on the conducting sphere installation mask 26 roughly is formed on the design attitude.
Fig. 8 is the view of problem of method that is used to explain the formation solder bump of prior art.
Therefore, as shown in Figure 8, in the method for the formation solder bump of prior art, using conducting sphere installation mask 26 under the situation of installation conducting sphere 28 on the pad 16, there is such problem, that is: conducting sphere installing hole 26A and salient point form the mutual misalignment of regional 16A, and the pad 16 of conducting sphere 28 is not installed above producing.The size of pad 16 or conducting sphere 28 is more little, and this problem is obvious more.
In addition, the method for the formation solder bump of prior art has such problem, that is: owing to having used conducting sphere that mask 26 is installed the manufacturing cost of substrate 10 is increased.
Summary of the invention
Exemplary embodiment of the present invention provides a kind of method that forms solder bump, and this method can reduce manufacturing cost and conducting sphere is installed on each pad reliably.
One aspect of the present invention relates to a kind of method that forms solder bump, and described method is carried out reflow treatment to the conducting sphere that is installed on a plurality of pads, thereby forms solder bump.Described method comprises: metal film forms step, on pad, form can with the metal film of viscous compound chemically reactive; Organic viscous layer forms step, makes the solution and the described metal film chemically reactive that contain viscous compound, thereby forms organic viscous layer on metal film; And the conducting sphere installation steps, to described organic viscous layer supply conducting sphere, thereby conducting sphere is installed on the described pad by organic viscous layer and metal film.
According to the present invention, on pad, form can with the metal film of viscous compound chemically reactive, make the solution and the described metal film chemically reactive that contain viscous compound then, thus on metal film the organic viscous layer of formation.Therefore, under the very little situation of the area of the part of the organic viscous layer of formation of metal film, also can on metal film, form thickness organic viscous layer about equally.Therefore, when being installed on the pad, can a conducting sphere be installed reliably on each pad, and not use conducting sphere needed in the art that mask is installed to conducting sphere by organic viscous layer and metal film.In addition, because do not need conducting sphere that mask is installed, so can reduce the manufacturing cost that is formed with pad configuration.
In addition, viscous compound one of can contain in the following derivative at least: based on the derivative of aphthotriazoles, based on the derivative of BTA, based on the derivative of imidazoles, based on the derivative of benzimidazole, based on the derivative of mercaptobenzothiazoler with based on the derivative of benzothiazolethio aliphatic acid.Owing to used viscous compound, so can be formed for conducting sphere is temporarily fixed at organic viscous layer on the metal film.
In addition, can use copper film or nickel film as metal film.Therefore, can make metal film and viscous compound chemically reactive.
In addition, when using the nickel film as metal film, can also provide: the gold layer forms step, forms the gold layer on metal film; And gold layer removal step, between metal film formation step and organic viscous layer formation step and at organic viscous layer, form golden layer of step tight front removal.Therefore, be easy under the oxidized situation of nickel film, can prevent nickel film generation oxidation by on metal film, forming the gold layer as metal film in use.
In addition, in the conducting sphere installation steps, form on the pad of organic viscous layer above conducting sphere can also being dispersed in, make described pad swing or shake then, thereby on each pad, a conducting sphere is installed.Therefore, a conducting sphere can be installed on each pad.
In addition, can also provide nonproliferation film to form step, promptly before metal film forms step, on pad, form nonproliferation film, on nonproliferation film, form metal film then.Therefore, when using copper,, can prevent that the copper that is included in the pad from diffusing into solder bump by on pad, forming nonproliferation film as the pad material.
In addition, nonproliferation film can be by constituting one of at least in the nickel film that forms by plating method, palladium film and the golden film.Therefore, can prevent that the copper that is included in the pad from diffusing into solder bump.
According to the present invention, make the metal film that is formed on the pad carry out chemical reaction, thereby be formed for organic viscous layer of temporary fixed conducting sphere.Therefore, can accurately arrange small conducting sphere, and not use conducting sphere that mask is installed.Therefore, can reduce manufacturing cost, and a conducting sphere can be installed on each pad reliably.
From following detailed, accompanying drawing and claims, it will be apparent that other features and advantages of the present invention.
Description of drawings
Fig. 1 is the cutaway view that the substrate of prior art is shown.
Fig. 2 is the view (first step) that the solder bump formation step of prior art is shown,
Fig. 3 is the view (second step) that the solder bump formation step of prior art is shown,
Fig. 4 is the view (the 3rd step) that the solder bump formation step of prior art is shown,
Fig. 5 is the view (the 4th step) that the solder bump formation step of prior art is shown,
Fig. 6 is the view (the 5th step) that the solder bump formation step of prior art is shown,
Fig. 7 is the view (the 6th step) that the solder bump formation step of prior art is shown,
Fig. 8 is the view of problem of method that is used to explain the formation solder bump of prior art,
Fig. 9 is the cutaway view that illustrates according to the substrate of first embodiment of the invention,
Figure 10 is the cutaway view that illustrates according to the substrate of the modification of first embodiment of the invention,
Figure 11 illustrates the view (first step) that forms step according to the solder bump of first embodiment of the invention,
Figure 12 illustrates the view (second step) that forms step according to the solder bump of first embodiment of the invention,
Figure 13 illustrates the view (the 3rd step) that forms step according to the solder bump of first embodiment of the invention,
Figure 14 illustrates the view (the 4th step) that forms step according to the solder bump of first embodiment of the invention,
Figure 15 illustrates the view (the 5th step) that forms step according to the solder bump of first embodiment of the invention,
Figure 16 illustrates the view (the 6th step) that forms step according to the solder bump of first embodiment of the invention,
Figure 17 illustrates the view (the 7th step) that forms step according to the solder bump of first embodiment of the invention,
Figure 18 illustrates the view (the 8th step) that forms step according to the solder bump of first embodiment of the invention,
Figure 19 illustrates the view (the 9th step) that forms step according to the solder bump of first embodiment of the invention,
Figure 20 illustrates the view (the tenth step) that forms step according to the solder bump of first embodiment of the invention,
Figure 21 illustrates the view (first step) that forms step according to the solder bump of the modification of first embodiment of the invention,
Figure 22 illustrates the view (second step) that forms step according to the solder bump of the modification of first embodiment of the invention,
Figure 23 illustrates the view (the 3rd step) that forms step according to the solder bump of the modification of first embodiment of the invention,
Figure 24 is the cutaway view that illustrates according to the substrate of second embodiment of the invention,
Figure 25 is the cutaway view that illustrates according to the substrate of the modification of second embodiment of the invention,
Figure 26 illustrates the view (first step) that forms step according to the solder bump of second embodiment of the invention,
Figure 27 illustrates the view (second step) that forms step according to the solder bump of second embodiment of the invention,
Figure 28 illustrates the view (the 3rd step) that forms step according to the solder bump of second embodiment of the invention,
Figure 29 illustrates the view (the 4th step) that forms step according to the solder bump of second embodiment of the invention,
Figure 30 illustrates the view (the 5th step) that forms step according to the solder bump of second embodiment of the invention,
Figure 31 illustrates the view (first step) that forms step according to the solder bump of the modification of second embodiment of the invention,
Figure 32 illustrates the view (second step) that forms step according to the solder bump of the modification of second embodiment of the invention,
Figure 33 is the view (first step) that is used to explain another kind of conductive ball mounting method,
Figure 34 is the view (second step) that is used to explain another kind of conductive ball mounting method,
Figure 35 is the view (first step) that is used to explain another conductive ball mounting method,
Figure 36 is the view (second step) that is used to explain another conductive ball mounting method, and
Figure 37 is the view of problem of method that is used to explain the formation solder bump of prior art.
Embodiment
Next, embodiments of the invention will be described with reference to the drawings.
(first embodiment)
Fig. 9 is the cutaway view that illustrates according to the substrate of first embodiment of the invention.
With reference to figure 9, have base main body 101, through-electrode 102, a plurality of pad 103 and 107, solder mask 104 and 108, nonproliferation film 105 and 109, metal film 111 and solder bump 112 according to the substrate 100 of present embodiment.In the present embodiment, will carry out following description as the example of substrate 100 as the distributing board of semiconductor packages.
Base main body 101 is plate shape shape and has a plurality of through holes 115.In through hole 115, be provided with through-electrode 102.The lower end of through-electrode 102 is connected with pad 103, and the upper end of through-electrode 102 is connected with pad 107.Through-electrode 102 is used to make pad 103 to be electrically connected with pad 107.For example, can use the plated copper film that forms by plating method as through-electrode 102.
For example, for nonproliferation film 109, can use following film: nickel/golden stacked film with the nickel dam that on the surperficial 121A that is exposed to opening portion 122 of coupling part 121, stacks gradually and gold layer; Nickel/palladium/golden stacked film with nickel dam, palladium layer and gold layer of on the surperficial 121A of coupling part 121, stacking gradually; Palladium/golden stacked film with the palladium layer that on the surperficial 121A of coupling part 121, stacks gradually and gold layer; And the gold layer that on the surperficial 121A of coupling part 121, forms.For example, using under the nickel/palladium/situation of golden stacked film as nonproliferation film 109, by the sequentially stacked nickel dam of electroless plating method (for example, thickness is 3 μ m or bigger), the palladium layer (for example, thickness is 0.1 μ m or littler) and gold layer (for example, thickness is 0.01 μ m-0.5 μ m) to form nickel/palladium/golden stacked film.
The opposite side that metal film 111 is arranged in the surface that contacts with pad 107 of nonproliferation film 109 covers the surface of nonproliferation film 109.Metal film 111 can with the viscous compound chemically reactive that one of contains in the following derivative at least: based on the derivative of aphthotriazoles, based on the derivative of BTA, based on the derivative of imidazoles, based on the derivative of benzimidazole, based on the derivative of mercaptobenzothiazoler with based on benzothiazolethio aliphatic acid.Metal film 111 is used to form organic viscous layer, so as by with the solution that contains viscous compound react will hereinafter will describe conducting sphere (by making conducting sphere become solder bump 112 carrying out reflow treatment on the conducting sphere) temporarily anchor on the metal film 111.
For example, can use copper film or nickel film as metal film 111.Using under the situation of copper film as metal film 111, the thickness of copper film can be set to for example 0.1 μ m-1.0 μ m.For example, can form metal film 111 by plating method.
For example, can use distributing board, encapsulation (for example wafer-level package) or semiconductor chip as substrate 100 with said structure (pad structure of substrate).
With reference to substrate 100 according to present embodiment, very thick (for example with the metal film 111 that is arranged on the nonproliferation film 109, thickness is equal to or greater than 0.5 μ m) situation (when forming solder bump 112, only a part of metal film 111 diffuses into the situation of scolder) being described for example.Under the situation of metal film 111 very thin (for example, thickness is less than 0.5 μ m), when in the step shown in Figure 19 that will describe hereinafter conducting sphere 129 being carried out reflow treatment, all metal films 111 all diffuse into scolder.Therefore, after forming solder bump 112, do not stay metal film 111.
In other words, shown in Figure 10 as what hereinafter will describe, on substrate 123, there is not the metal film 111 that covers nonproliferation film 109 as component end item.
Figure 10 is the cutaway view that illustrates according to the substrate of the modification of first embodiment of the invention.In Figure 10, has identical Reference numeral with substrate 100 components identical according to first embodiment.
With reference to Figure 10, all diffuse into the solder bump 112 except being arranged on according to the whole metal films 111 in the substrate 100 of first embodiment, identical according to the structure of the substrate 123 of the modification of first embodiment of the invention with substrate 100.
Figure 11-Figure 20 is the view that illustrates according to the solder bump formation method of first embodiment of the invention.In Figure 11-Figure 20, has identical Reference numeral with substrate 100 components identical according to first embodiment.
With reference to figure 11-Figure 20, will be that example is described the method according to the formation solder bump of present embodiment with situation about making according to the substrate 100 of first embodiment.
At first, in step shown in Figure 11, form and form through hole 115, through-electrode 102 and a plurality of pad 103 and 107 on the base material 125 of regional A having a plurality of substrates that will form substrate 100 by known method, then, on the surperficial 125A of base material 125, form solder mask 104, and go up at the surperficial 125B of base material 125 (being positioned at the opposite side of surperficial 125A) and to form solder mask 108 with opening portion 122 that the surperficial 121A that makes coupling part 121 exposes with opening portion 118 that the surperficial 117A that makes coupling part 117 exposes.
Along cutting position B cutting base material 125, thereby obtain a plurality of base main body 101.For example, can use silicon substrate or glass epoxy resin substrate as base material 125.For example, form through-electrode 102, have the pad 103 of coupling part 117 and have the pad 107 of coupling part 121 by plating method.For example, can use copper film as through-electrode 102, pad 103 and 107. Pad 103 and 107 thickness can be set to for example 15 μ m.The diameter R1 of pad 103 can be set to for example 120 μ m.In this case, the diameter R2 of coupling part 117 can be set to for example 80 μ m.In addition, the diameter of the conducting sphere that uses in the step shown in Figure 16 of Miao Shuing is under the situation of 90 μ m hereinafter, and the diameter R3 of pad 107 can be set to for example 120 μ m.In this case, the diameter R4 of coupling part 121 can be set to for example 80 μ m.Opening portion 118 forms the diameter R2 that its diameter is substantially equal to coupling part 117.In addition, for example, opening portion 122 can form the diameter R4 that its diameter is substantially equal to coupling part 121.
Subsequently, in step shown in Figure 12, clean and activation processing are carried out in coupling part 117 and 121, then, on the surperficial 117A of coupling part 117, form nonproliferation film 105 by plating method, and on the surperficial 121A of coupling part 121, form nonproliferation film 109 (nonproliferation film formation step).For example, clean and activation processing comprise: the surperficial 121A of the surperficial 117A of coupling part 117 and coupling part 121 is carried out ungrease treatment, the surperficial 121A through the surperficial 117A of the coupling part 117 of ungrease treatment and coupling part 121 is carried out etch processes, the surperficial 121A through the surperficial 117A of the coupling part 117 of etch processes and coupling part 121 is carried out pickling processes and to carrying out activation processing through the surperficial 117A of the coupling part 117 of pickling processes and the surperficial 121A of coupling part 121.
For example, for nonproliferation film 105 and 109, can use nickel/golden stacked film with the nickel dam that stacks gradually and gold layer; Nickel/palladium/golden stacked film with nickel dam, palladium layer and gold layer of stacking gradually; Palladium/golden stacked film with the palladium layer that stacks gradually and gold layer; And gold layer.For example, using under the nickel/palladium/situation of golden stacked film as nonproliferation film 105 and 109, by the sequentially stacked nickel dam of electroless plating method (for example, thickness is 3 μ m or bigger), the palladium layer (for example, thickness is 0.1 μ m or littler) and gold layer (for example, thickness is 0.01 μ m-0.5 μ m) to form nickel/palladium/golden stacked film.
Subsequently, in step shown in Figure 13, by plating method form can with the metal film 111 of the viscous compound chemically reactive that one of contains in the following derivative at least: based on the derivative of aphthotriazoles, based on the derivative of BTA, based on the derivative of imidazoles, based on the derivative of benzimidazole, based on the derivative of mercaptobenzothiazoler with based on benzothiazolethio aliphatic acid, so that cover the surface that is exposed to opening portion 122 (metal film formation step) of nonproliferation film 109.
For example, can use copper film or nickel film as can with the metal film 111 of viscous compound chemically reactive.For example, can form metal film 111 by plating method.Using under the situation of copper film as metal film 111, the thickness of metal film 111 can be set to for example 0.1 μ m-1.0 μ m.Therefore, by reducing thickness, can alleviate the influence that electrical characteristics is had the copper-palladium compound of adverse effect as the copper film of metal film 111.
Next, in step shown in Figure 14, make the solution that contains viscous compound and metal film 111 chemically reactives to form organic viscous layer 127, so that cover the part that is exposed to opening portion 122 (organic viscous layer formation step) of metal film 111.More particularly, form organic viscous layer 127 in the following manner, that is: in the solution that one of structure shown in Figure 13 is immersed in the following derivative that contains 0.05%-20% by weight at least:, perhaps this solution is applied on the part that is exposed to opening portion 122 of metal film 111 based on the derivative of aphthotriazoles, based on the derivative of BTA, based on the derivative of imidazoles, based on the derivative of benzimidazole, based on the derivative of mercaptobenzothiazoler with based on the derivative of benzothiazolethio aliphatic acid.The step shown in Figure 16 that organic viscous layer 127 is used for will describing hereinafter temporarily anchors to metal film 111 with conducting sphere 129.The thickness of organic viscous layer 127 can be set to for example 50nm.
Therefore, on pad 107, form can with the metal film 111 of viscous compound chemically reactive, make the solution and the metal film 111 mutual chemically reactives that contain viscous compound then, thereby on the part that is exposed to opening portion 122 of metal film 111, form organic viscous layer 127.Therefore, under the very little situation of the surface area of the organic viscous layer 127 of the formation of metal film 111, also can on metal film 111, form thickness organic viscous layer 127 about equally.Therefore, in the time will being installed in pad 107 to conducting sphere 129, can each conducting sphere be installed on the pad 107 reliably, and not use conducting sphere needed in the art that mask 26 (seeing Fig. 4 and Fig. 8) is installed by organic viscous layer 127 and metal film 111.In addition, because do not need conducting sphere that mask 26 is installed, therefore can reduce the manufacturing cost of the substrate 100 that is formed with solder bump 112.
Subsequently, in step shown in Figure 15, structure shown in Figure 14 is fixed on the operating desk 131 of conducting sphere feeding mechanism 130, makes a plurality of conducting spheres can fall a side of the organic viscous layer 127 of formation of structure shown in Figure 14.Conducting sphere feeding mechanism 130 has: operating desk 131; Pendulous device 132, it makes operating desk 131 swings; Supporter 133, it is by pendulous device 132 support operation platforms 131; And conducting sphere container 134, it is arranged in operating desk 131 tops and is used to that conducting sphere 129 is fallen the said structure (seeing Figure 16) that is fixed on the operating desk 131.
Then, in step shown in Figure 16, conducting sphere 129 is fallen from the conducting sphere container 134 that is arranged in operating desk 131 tops, and make the structure swing (making operating desk 131 swings) that comprises pad 107, thereby be formed with an installation conducting sphere 129 (conducting sphere installation steps) on each pad 107 of metal film 111 and organic viscous layer 127.
For example, can use the soldered ball that constitutes by the tin-silver-copper alloy or the soldered ball that constitutes by tin-silver alloy as conducting sphere 129.In addition, the diameter of conducting sphere 129 can be set to for example 80 μ m-90 μ m.
After this, in step shown in Figure 17, make the structure swing that is fixed on the operating desk 131 under the state that conducting sphere 129 stops to fall.Therefore, remove or collect the unnecessary conducting sphere 129 that can not be installed on the metal film 111 from solder mask 108.
Next, in step shown in Figure 180, take off the structure that conducting sphere 129 is installed shown in Figure 17 from operating desk 131.
Subsequently, in step shown in Figure 19, conducting sphere shown in Figure 180 129 is carried out reflow treatment, thereby on each metal film 111, form solder bump 112.Therefore, a plurality of base materials in being arranged on base material 125 form in the regional A and to form the structure corresponding with substrate 100.In step shown in Figure 19, organic viscous layer 127 volatilizees in reflow treatment.
In step shown in Figure 19, under the situation of not using solder flux, conducting sphere 129 is carried out reflow treatment.
Owing under the situation of not using solder flux, conducting sphere 129 is carried out reflow treatment, thereby needn't carry out solder flux and apply and handle and conducting sphere 129 is carried out solder flux cleaning step (cleaning step with an organic solvent) after the reflow treatment.Therefore, can simplify the process of making substrate 100.Therefore, can reduce the manufacturing cost of substrate 100.
In addition, because do not use solder flux, so needn't carry out in the required regular cleaning of prior art to reflow ovens.
In addition, because do not use solder flux, so can on the surface of the surface of solder bump 112 or substrate 100, not produce flux residue.Therefore, can prevent that solder flux from causing solder bump 112 and pad 107 to be corroded.Therefore, can strengthen substrate 100 and the reliability of electrical connection that is installed in the semiconductor chip of substrate 100, and the reliability of electrical connection between semiconductor chip and the substrate 100.
As indicated above, in step shown in Figure 19, be arranged under the thicker situation of metal film 111 on the nonproliferation film 109 (for example, thickness is equal to or greater than 0.5 μ m), metal film 111 can be stayed on the nonproliferation film shown in Figure 19 109.Yet, under the thin situation of metal film 111 (for example, thickness is less than 0.5 μ m), because whole metal films 111 all diffuse into scolder when conducting sphere 129 is carried out reflow treatment, so after forming solder bump 112, can not stay metal film 111.
Subsequently, in step shown in Figure 20, along cutting position B cutting structure shown in Figure 19.Thereby a plurality of substrates 100 have been made.
Method for forming bump according to present embodiment, on pad 107, form can with viscous compound chemically reactive metal film 111, make the solution and the metal film 111 mutual chemically reactives that contain viscous compound then, thereby on the part that is exposed to opening portion 122 of metal film 111, form organic viscous layer 127.Therefore, under the very little situation of the surface area of the organic viscous layer 127 of the formation of metal film 111, also can on metal film 111, form thickness organic viscous layer 127 about equally.Therefore, in the time will being installed in conducting sphere 129 on the pad 107, can a conducting sphere 129 be installed reliably by organic viscous layer 127 and metal film 111 on each pad 107, and not use conducting sphere needed in the art that mask 26 (see figure 4)s are installed.In addition, because do not need conducting sphere that mask 26 is installed, therefore can reduce the manufacturing cost of the substrate 100 that is formed with solder bump 112.
Figure 21-Figure 23 is the view that illustrates according to the solder bump formation method of the modification of first embodiment of the invention.In Figure 21-Figure 23, has identical Reference numeral with above-mentioned Figure 11-structure components identical shown in Figure 20.
With reference to figure 21-Figure 23, be that example is described the method according to the formation solder bump of the modification of first embodiment to make situation according to the substrate 100 of first embodiment.
At first, carry out the processing identical to form structure shown in Figure 180 with above-mentioned Figure 11-step shown in Figure 180.Next, in step shown in Figure 21, make the scolder that is included in the conducting sphere 129 only melt half, so that conducting sphere 129 is temporarily fixed on the pad 107 by metal film 111.
Like this, make the scolder that is included in the conducting sphere 129 only melt half, so that conducting sphere 129 is temporarily fixed on the pad 107 by metal film 111.Therefore, in the step shown in Figure 22 that will describe hereinafter, can prevent that conducting sphere 129 from sliding with respect to pad 107 when being formed for covering the solder flux 147 of conducting sphere 129.
Next, in step shown in Figure 22, form solder flux 147 so that cover the surface and the conducting sphere 129 of temporary fixed conducting sphere 129 1 sides of structure shown in Figure 21.For example, form solder flux 147 by coating process.
Then, in step shown in Figure 23, conducting sphere 129 is carried out reflow treatment to form solder bump 112.At this moment, most of solder flux 147 volatilizations.Therefore, the thickness of the solder flux 147 that obtains after handling step shown in Figure 23 is less than the thickness that is arranged on the solder flux 147 in the structure shown in Figure 22.
After this, by cleaning the solder flux of removing in the step shown in Figure 23 147.Subsequently, carry out the technology in the above-mentioned step shown in Figure 20, thereby make a plurality of substrates 100.
According to the method for forming bump of present embodiment, owing to used solder flux 147 when forming solder bump 112 conducting sphere 129 being carried out reflow treatment, so can fully keep the bond strength between solder bump 112 and the pad 107 and the wetability of scolder.Preferably, determine whether using method according to the composition of the scolder that constitutes conducting sphere 129 according to the formation solder bump of the modification of first embodiment.
In addition, if apply solder flux under conducting sphere 129 and states (state shown in Figure 180) that organic viscous layer 127 simply combines, then organic viscous layer 127 is dissolved by solder flux, thereby conducting sphere is slided with respect to pad 107.For this reason, preferably, as shown in figure 21, conducting sphere 129 should be dissolved half and be temporarily fixed.
In addition, under some situation of the reflow step that does not have solder flux as shown in figure 19, organic viscous layer 127 does not volatilize fully but has residual.In this case, preferably remove organic viscous layer 127, thereby strengthen the bond strength of scolder by the modification of using first embodiment by suitable solder flux.
(second embodiment)
Figure 24 is the cutaway view that illustrates according to the substrate of second embodiment of the invention.In Figure 24, has identical Reference numeral with substrate 100 components identical according to first embodiment.
With reference to Figure 24, be arranged on according to the nonproliferation film 109 and metal film 111 in the substrate 100 of first embodiment except providing metal film 151 to replace, identical according to the structure of the substrate 150 of second embodiment with the structure of substrate 100.
The opposition side on surface of upper surface 101B that metal film 151 is arranged in the contact substrate main body 101 of coupling part 121 covers the surperficial 121A of coupling part 121.Metal film 151 can with the viscous compound chemically reactive described among first embodiment.Metal film 151 is used for reacting with the solution that contains the viscous compound that first embodiment describes, thereby forms organic viscous layer so that conducting sphere 129 is temporarily fixed on the metal film 151.For example, can use the nickel film that forms by plating method as metal film 151.Using under the situation of nickel film as metal film 151, the thickness of metal film 151 can be set to for example be equal to or greater than 3 μ m (for example, 3 μ m-8 μ m).
For example, can use distributing board, encapsulation (for example wafer-level package) or semiconductor chip as substrate 150 with said structure (pad structure of substrate).
With reference to substrate 150 according to present embodiment, very thick (for example with the metal film 151 that is arranged on the coupling part 121, thickness is equal to or greater than 0.5 μ m) situation (when forming solder bump 112, only a part of metal film 151 diffuses into the situation of scolder) being described for example.Under the situation of metal film 151 very thin (for example, thickness is less than 0.5 μ m), when conducting sphere 129 being carried out reflow treatment with formation solder bump 112, all metal films 151 all diffuse into scolder.Therefore, after forming solder bump 112, do not stay metal film 151.In other words, shown in Figure 25 as what hereinafter will describe, on substrate 180, there is not metal film 151 as component end item.
Figure 25 is the cutaway view that illustrates according to the substrate of the modification of second embodiment of the invention.In Figure 25, has identical Reference numeral with substrate 150 components identical according to second embodiment.
With reference to Figure 25, all diffuse into the solder bump 112 except being arranged on according to the whole metal films 151 in the substrate 150 of second embodiment, identical according to the structure of the substrate 180 of the modification of second embodiment of the invention with substrate 150.
Figure 26-Figure 30 is the view that illustrates according to the solder bump formation method of second embodiment of the invention.In Figure 26-Figure 30, has identical Reference numeral with substrate 150 components identical according to second embodiment.
At first, in step shown in Figure 26, carry out with first embodiment in Figure 11 of describing and step identical operations shown in Figure 12 to form structure shown in Figure 26.Subsequently, in step shown in Figure 27, by plating method form can with the metal film 151 of the viscous compound chemically reactive that one of contains in the following derivative at least: based on the derivative of aphthotriazoles, based on the derivative of BTA, based on the derivative of imidazoles, based on the derivative of benzimidazole, based on the derivative of mercaptobenzothiazoler with based on the derivative of benzothiazolethio aliphatic acid, so that cover the surperficial 121A that is exposed to opening portion 122 (metal film formation step) of coupling part 121.For example, can use the nickel film as can with the metal film 151 of viscous compound chemically reactive.Using under the situation of nickel film as metal film 151, the thickness of metal film 151 can be set to for example be equal to or greater than 3 μ m (for example, 3 μ m to 8 μ m).
In addition, can form metal film 151 and nonproliferation film 105 simultaneously.For example, constitute nonproliferation film 105 by nickel/palladium/golden stacked film, on surperficial 121A, form nickel dam (nickel film) when on surperficial 117A, forming nickel dam, then by plating method and use surperficial 121A on surperficial 117A, sequentially to form palladium layer and gold layer, thereby form nonproliferation film 105 and metal film 151 simultaneously as mask.
Next, in step shown in Figure 28, make the solution and metal film 151 chemically reactives that contain viscous compound form organic viscous layer 155, so that cover the part that is exposed to opening portion 122 (organic viscous layer formation step) of metal film 151.More particularly, form organic viscous layer 155 in the following manner: in the solution that one of structure shown in Figure 27 is immersed in the following derivative that contains 0.05%-20% by weight at least:, perhaps this solution is applied on the part that is exposed to opening portion 122 of metal film 151 based on the derivative of aphthotriazoles, based on the derivative of BTA, based on the derivative of imidazoles, based on the derivative of benzimidazole, based on the derivative of mercaptobenzothiazoler with based on the derivative of benzothiazolethio aliphatic acid.Organic viscous layer 155 is used for the temporary fixed conducting sphere 129 of step shown in Figure 29 that will describe hereinafter.The thickness of organic viscous layer 155 can be set to for example 50nm.
Therefore, on pad 107, form can with the metal film 151 of viscous compound chemically reactive, make the solution and the metal film 151 mutual chemically reactives that contain viscous compound then, thereby on the part that is exposed to opening portion 122 of metal film 151, form organic viscous layer 155.Therefore, under the very little situation of the surface area of the organic viscous layer 155 of the formation of metal film 151, also can on metal film 151, form thickness organic viscous layer 155 about equally.Therefore, in the time will being installed in conducting sphere 129 on the pad 107, can a conducting sphere 129 be installed reliably by organic viscous layer 155 and metal film 151 on each pad 107, and not use conducting sphere needed in the art that mask 26 (seeing Fig. 4 and Fig. 8) is installed.In addition, do not need conducting sphere that mask 26 is installed.Therefore, can reduce the manufacturing cost of the substrate 150 that is formed with solder bump 112.
Subsequently, in step shown in Figure 29, conducting sphere 129 is fallen from the conducting sphere container 134 of operating desk 131 tops that are arranged in conducting sphere feeding mechanism 130, and make the structure swing (making operating desk 131 swings) that comprises pad 107, a conducting sphere 129 (conducting sphere installation steps) is installed thereby be formed with on each pad 107 of metal film 151 and organic viscous layer 155.
Then, carry out with first embodiment in the processing that Figure 17-step shown in Figure 20 is identical described, thereby made a plurality of substrates 150 as shown in figure 30.
Method for forming bump according to second embodiment, on pad 107, form can with the metal film 151 of viscous compound chemically reactive, make the solution and the metal film 151 mutual chemically reactives that contain viscous compound then, thereby on the part that is exposed to opening portion 122 of metal film 151, form organic viscous layer 155.Therefore, under the very little situation of the surface area of the organic viscous layer 155 of the formation of metal film 151, also can on metal film 151, form thickness organic viscous layer 155 about equally.Therefore, in the time will being installed in conducting sphere 129 on the pad 107, can a conducting sphere 129 be installed reliably by organic viscous layer 155 and metal film 151 on each pad 107, and not use conducting sphere needed in the art that mask 26 (seeing Fig. 4 and Fig. 8) is installed.In addition, do not need conducting sphere that mask 26 is installed.Therefore, can reduce the manufacturing cost of the substrate 150 that is formed with solder bump 112.
Figure 31 and Figure 32 are the views that illustrates according to the solder bump formation method of the modification of second embodiment of the invention.
With reference to Figure 31 and Figure 32, will the method according to the formation solder bump of the modification of second embodiment be described.At first, carry out the processing identical with step shown in Figure 27 to form structure shown in Figure 27 with above-mentioned Figure 26.
Next, in step shown in Figure 31, form golden film 161, so that cover the surface that is exposed to opening portion 122 of metal film 151 by plating method.Owing to formed the golden film 161 that covers metal film 151 surfaces, when using the nickel film, can prevent to be easy to oxidized nickel film generation oxidation as metal film 151.Therefore, keep in the structure that is formed with metal film 151 under the situation of a period of time (not forming organic viscous layer 155 immediately after forming metal film 151), it is effective forming the surface that golden film 161 covers metal film 151 (being the nickel film in this case).
Then, in step shown in Figure 32, remove golden film 161 shown in Figure 31.After this, carry out and the processing that above-mentioned Figure 28-step shown in Figure 30 is identical, thereby made a plurality of substrates 150.
Though described in detail according to a preferred embodiment of the invention, the invention is not restricted to these specific embodiments, but can under not breaking away from, carry out variations and modifications as the situation of the described scope of the invention of claims.
For example, although the situation that falls and be installed on organic viscous layer 127 and 155 with conducting sphere 129 in first embodiment and second embodiment is that example is described, also Figure 33 that can will describe below using and method shown in Figure 34 or Figure 35 and method shown in Figure 36 are installed in conducting sphere 129 on organic viscous layer 127 and 155.
Figure 33 and Figure 34 are the views that is used to explain another kind of conductive ball mounting method, and Figure 35 and Figure 36 are the views that is used to explain another conductive ball mounting method.
As Figure 33 and shown in Figure 34, Figure 14 or structure insertion shown in Figure 28 can also be accommodated in the conducting sphere container 171 of conducting sphere 129, extract the structure of insertion like this then, thereby conducting sphere 129 is combined with organic viscous layer 127 and 155.
In addition, as Figure 35 and shown in Figure 36, be equipped with on the flat board 173 of conducting sphere 129 above Figure 14 or structure shown in Figure 28 can also being pressed in, thereby make conducting sphere 129 combine and make conducting sphere 129 to be installed on organic viscous layer 127 and 155 with organic viscous layer 127 and 155.
The present invention can be applied to the method for following formation solder bump, on distributing board, encapsulation (for example wafer-level package) or substrate (for example semiconductor chip) pad is set that is:, conducting sphere is installed on each pad, thereby forms soldered ball.
Claims (7)
1. method that forms solder bump comprises:
Metal film forms step, on a plurality of pads, form can with the metal film of viscous compound chemically reactive;
Organic viscous layer forms step, makes the solution and the described metal film chemically reactive that contain viscous compound, thereby forms organic viscous layer on described metal film;
The conducting sphere installation steps to described organic viscous layer supply conducting sphere, thereby are installed in described conducting sphere on the described pad by described organic viscous layer and metal film; And
The described conducting sphere that is installed on the described pad is carried out reflow treatment.
2. the method for formation solder bump according to claim 1, wherein,
Described viscous compound one of contains in the following derivative at least: based on the derivative of aphthotriazoles, based on the derivative of BTA, based on the derivative of imidazoles, based on the derivative of benzimidazole, based on the derivative of mercaptobenzothiazoler with based on the derivative of benzothiazolethio aliphatic acid.
3. the method for formation solder bump according to claim 1 and 2, wherein,
Described metal film is copper film or nickel film.
4. the method for formation solder bump according to claim 3, wherein,
When using the nickel film as described metal film, described method also comprises:
The gold layer forms step, forms the gold layer on described metal film; And
The gold layer is removed step, forms between step and the described organic viscous layer formation step and forms the tight front of step at described organic viscous layer at described metal film and remove described gold layer.
5. the method for formation solder bump according to claim 1 and 2, wherein,
In described conducting sphere installation steps, described conducting sphere is dispersed on the described pad of the described organic viscous layer of top formation, make described pad swing or shake then, thereby on each described pad, a described conducting sphere is installed.
6. the method for formation solder bump according to claim 1 and 2 also comprises:
Nonproliferation film forms step, forms nonproliferation film before described metal film forms step on described pad,
Wherein, described metal film is formed on the described nonproliferation film.
7. the method for formation solder bump according to claim 6, wherein,
Described nonproliferation film is by constituting one of at least in the nickel film that forms by plating method, palladium film and the golden film.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007186020 | 2007-07-17 | ||
| JP2007186020 | 2007-07-17 | ||
| JP2008125761 | 2008-05-13 |
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| CN101350323A true CN101350323A (en) | 2009-01-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2008101307670A Pending CN101350323A (en) | 2007-07-17 | 2008-07-17 | Solder bump forming method |
Country Status (4)
| Country | Link |
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| JP (1) | JP5297083B2 (en) |
| KR (1) | KR20090008146A (en) |
| CN (1) | CN101350323A (en) |
| TW (1) | TWI427720B (en) |
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|---|---|---|---|---|
| KR101122140B1 (en) | 2010-05-11 | 2012-03-16 | 엘지이노텍 주식회사 | Printed circuit board with single-layer using bump structure and Manufacturing method of the same |
| TW201233280A (en) * | 2011-01-25 | 2012-08-01 | Taiwan Uyemura Co Ltd | Chemical palladium-gold plating film method |
| TW201233279A (en) * | 2011-01-25 | 2012-08-01 | Taiwan Uyemura Co Ltd | Copper or palladium-copper wire package process and structure thereof |
| TWI464929B (en) * | 2011-03-16 | 2014-12-11 | Lextar Electronics Corp | Light source module with enhanced heat dissipation efficiency and embedded package structure thereof |
| TWI555452B (en) * | 2014-08-12 | 2016-10-21 | 南亞電路板股份有限公司 | Circuit board and method for forming the same |
| CN108513433A (en) * | 2018-04-24 | 2018-09-07 | 苏州维信电子有限公司 | A kind of flexible circuit board PAD and its manufacturing method every tin |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3838672B2 (en) * | 1993-06-07 | 2006-10-25 | 昭和電工株式会社 | Method for forming solder circuit board |
| JPH11121495A (en) * | 1997-10-16 | 1999-04-30 | Ricoh Co Ltd | Semiconductor device manufacture |
| WO1999034654A1 (en) * | 1997-12-29 | 1999-07-08 | Ibiden Co., Ltd. | Multilayer printed wiring board |
| JP2001267731A (en) * | 2000-01-13 | 2001-09-28 | Hitachi Ltd | Method of manufacturing electronic part and the same fitted with bump |
| WO2004077560A1 (en) * | 2003-02-26 | 2004-09-10 | Ibiden Co., Ltd. | Multilayer printed wiring board |
| JP4409990B2 (en) * | 2003-02-28 | 2010-02-03 | 昭和電工株式会社 | A method of manufacturing a solder circuit board. |
| JP2005117035A (en) * | 2003-09-19 | 2005-04-28 | Showa Denko Kk | Flip-chip gallium-nitride-based semiconductor light-emitting element and method of fabricating same |
| US20050082654A1 (en) * | 2003-09-26 | 2005-04-21 | Tessera, Inc. | Structure and self-locating method of making capped chips |
| US7626829B2 (en) * | 2004-10-27 | 2009-12-01 | Ibiden Co., Ltd. | Multilayer printed wiring board and manufacturing method of the multilayer printed wiring board |
-
2008
- 2008-05-13 JP JP2008125761A patent/JP5297083B2/en active Active
- 2008-07-16 KR KR1020080068999A patent/KR20090008146A/en not_active Application Discontinuation
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- 2008-07-17 CN CNA2008101307670A patent/CN101350323A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009044128A (en) | 2009-02-26 |
| JP5297083B2 (en) | 2013-09-25 |
| KR20090008146A (en) | 2009-01-21 |
| TW200908180A (en) | 2009-02-16 |
| TWI427720B (en) | 2014-02-21 |
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