CN100447971C - Method for mounting semiconductor device, semiconductor device and its mounting structure - Google Patents
Method for mounting semiconductor device, semiconductor device and its mounting structure Download PDFInfo
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- CN100447971C CN100447971C CNB2005100999952A CN200510099995A CN100447971C CN 100447971 C CN100447971 C CN 100447971C CN B2005100999952 A CNB2005100999952 A CN B2005100999952A CN 200510099995 A CN200510099995 A CN 200510099995A CN 100447971 C CN100447971 C CN 100447971C
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/731—Location prior to the connecting process
- H01L2224/73101—Location prior to the connecting process on the same surface
- H01L2224/73103—Bump and layer connectors
- H01L2224/73104—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
The invention provides a packaging method and a packaging structure of a semiconductor device in which reliability of packaging is enhanced and high density mounting can be achieved, and to provide a semiconductor device suitable for use therein. The packaging method of a semiconductor device performing face down bonding of a semiconductor chip 2 having a bump 3 onto a substrate 7 having a conductive part 8 comprises a step for forming a photosensitive and adhesive resin layer 5 on the bump forming surface of the semiconductor chip 2, a step for exposing the upper surface of the bump 3 by exposing and developing the resin layer 5 thereby removing resin from immediately above the bump 3, and a step for conducting the bump 3 of the semiconductor chip 2 and the conductive part 8 of the substrate 7 electrically by performing face down bonding of the semiconductor chip 2 applied with a resin film 6 composed of the resin layer 5 onto the substrate 7 thereby making the resin film 6 function as adhesive.
Description
Technical field
The present invention relates to have semiconductor device and the installation method of the semiconductor device that this semiconductor device is welded in upside-down mounting and the mounting structure of semiconductor device of semiconductor chip.
Background technology
Installation method as upside-down mounting welding semiconductor chip, in the prior art, known have used the anisotropic conducting membrance that constitutes by anisotropy conductive paste (ACP) and anisotropy conductive film (ACF) installation method (for example, with reference to patent documentation 1) and used the bonding installation method (for example, with reference to patent documentation 2) that constitutes by nonconductive paste (NCP) and non-conductive film (NCF) with insulative resin.In that this resin is used as in the installation method of bonding agent, when being installed in semiconductor chip on the substrate, in substrate-side described resin is set in advance, is the resin of Thermocurable or photo-curable.And, by with mounting semiconductor chip on substrate, and and then carry out heating and pressurizing processing etc., install.
[patent documentation 1] spy opens flat 04-32171 communique
[patent documentation 2] spy opens flat 04-82241 communique
But, like this, resin is set in substrate-side, and in the method used as bonding agent, for example, under the situation of the resin of paste, need special-purpose applying device respectively, under the situation of the resin of film like, need special-purpose applying device, therefore, owing to need this isolated plant, the problem that has installation cost to improve.
In addition, in substrate-side resin is set, and in the method for the welding of upside-down mounting thereon semiconductor chip, because the projection (bump) of semiconductor chip is pushed resin open to both sides when mounted, and discharge to the side, simultaneously, be connected on the pad (land) (conductive part) on the substrate, so between this pad and described projection inevitable residual resin (bonding agent).Like this and since pad, projection with the difference etc. of the thermal coefficient of expansion between the residual resin, therefore the danger that has generation to peel off between pad and the projection, have the low problem of installation reliability.In addition, because of residual resin, also have the connection resistance between pad and the projection to become big problem.
And then, if upside-down mounting welding semiconductor chip, because being expressed on the semiconductor chip, the resin (bonding agent) on the substrate discharges to the side, so other parts adjacent to semiconductor chip can not be configured in this semiconductor chip near, the result has produced dead angle (dead space) on substrate, it becomes a reason of infringement high-density installation.
Summary of the invention
The present invention In view of the foregoing makes, its objective is that providing a kind of does not need special-purpose device just can carry out the upside-down mounting welding especially, in addition, it is reliable that conducting between pad and the projection becomes, installation reliability improves, and then, can carry out not having on the substrate mounting structure of the installation method of semiconductor device of ground, dead angle high-density installation and semiconductor device and be applicable to its semiconductor device.
To achieve these goals, the installation method of semiconductor device of the present invention welds lobed semiconductor chip having on the substrate of conductive part upside-down mounting, it is characterized in that, comprising:
Convexing to form on the face of described semiconductor chip, form the step of resin bed with photonasty and cementability;
The described resin bed that exposes, and and then develop, with the resin on the positive top of removing described projection, and make the step of exposing above of projection;
The semiconductor chip flip chip bonding that has formed the resin molding that is made of described resin bed is received on the described substrate, and the pressurized, heated by the pressurized, heated body, described resin molding is worked as bonding agent, and the step that the conductive part of the projection of described semiconductor chip and described substrate is conducted.
Installation method according to this semiconductor device, owing to form the resin molding that works as bonding agent in semiconductor chip side, so for forming the resin bed that this resin molding is used, for example can form by the method that forms by fexible unit of spin coating etc., therefore, do not need special-purpose device, thereby can reduce installation cost.
In addition, because under the state that on make the projection of semiconductor chip, exposes, on substrate, directly carry out the upside-down mounting welding, and make the conductive part conducting of described projection and substrate, thus can between conductive part and projection, not enter resin, therefore, do not have the danger of peeling off between conductive part and the projection, installation reliability improves, and simultaneously, has also reduced the connection resistance between conductive part and the projection.
And then, because will have the resin molding of cementability works as bonding agent, that is, at heating and melting cooling and solidifying once more behind the resin molding, or carry out hot curing, thereby upside-down mounting welding semiconductor chip, so when upside-down mounting was welded, the resin that constitutes resin molding was discharged to the side of semiconductor chip hardly, therefore, owing on substrate, produce the dead angle hardly, so can carry out high-density installation.
In addition, in the installation method of described semiconductor device, preferred described resin is the resin of photonasty and thermoplasticity, or the resin that is made of its precursor; And comprise by the described resin bed of heat treated, make the resin that constitutes this resin bed step for the resin molding that constitutes by thermoplastic resin.
Thus, resin molding demonstrates good cementability, has excellent function as bonding agent.
In addition, in the installation method of this semiconductor device, in the resin of described photonasty and thermoplasticity or the resin material that constitutes by its precursor, preferably contain heat-curing resin or its a part of composition.
Thus, the thermal endurance of dielectric film improves, and reliability improves.
In addition, in the installation method of described semiconductor device, described resin bed also can be formed by photosensitive heat curing resin bonding thin slice.
Thus, for example,, simplified technology, improved productive rate by making the resin bed that constitutes by this photosensitive heat curing resin bonding thin slice still for resin molding etc. with cementability.
In addition, in the installation method of described semiconductor device, preferably described semiconductor chip is formed on the wafer and under the situation of the state before carrying out singualtion being in, remove the resin on the positive top of described projection, and make in the step of exposing above of projection, also remove the resin on positive top of the line of cut of described wafer simultaneously, and described line of cut is exposed.
The unusual difficulty of cutting resin and the wafer that constitutes by silicon together, but like this if the line of cut that makes exposes, then can come as prior art cut crystal easily by the line of cut of prior art.
In addition, in the installation method of described semiconductor device, preferably mark is being formed under the situation of described semiconductor chip, resin on the positive top of removing described projection, and make in the step of exposing above of projection, also remove the resin on positive top of the mark of described semiconductor chip simultaneously, and described mark is exposed.
Under the situation of the various marks such as mark that formed incisory mark or welding usefulness on the semiconductor chip, expose by making these marks, form and can carry out the pattern identical with common semiconductor chip.
In addition, in the installation method of described semiconductor device, also can receive on the described substrate at the semiconductor chip flip chip bonding that will form described resin molding, and in the step that the conductive part that makes the projection of described semiconductor chip and described substrate conducts, being situated between conducts described projection and described conductive part by welding material.
Thus, the conductive part of substrate and the projection of semiconductor chip are come drawing each other by the bonding force of resin molding, convergent force when being the resin molding melting and solidification, for connection, are engaged by welding material by being situated between, and have obtained firmer joint.In addition, the heating when making the resin molding fusion comes molten solder material, afterwards, cooling (natural cooling) during by cured resin film once more, still can the solidified welding material, so on technology, can increase hardly by the burden of adding in the processing that welding material causes.
A kind of semiconductor device of the present invention possesses lobed semiconductor chip, it is characterized in that: under the state that has exposed on the formation face of described projection above the described projection, the resin molding that is made of adhesive resin is set.
According to this semiconductor device, by working as bonding agent by the resin molding that adhesive resin constitutes, that is, and at heating and melting solidify once more after cooling off behind the resin molding, thereby the semiconductor chip flip chip bonding can be received on the substrate.In addition, at this moment, discharge to the side of semiconductor chip hardly,, therefore, can carry out high-density installation by using this semiconductor device so can on substrate, produce the dead angle hardly owing to constitute the resin of resin molding.
In addition, for forming the resin bed that described resin molding is used, for example the method that is formed by fexible unit etc. by spin coating etc. forms, and therefore, by using this semiconductor device not need the device of special use is installed, and therefore, can reduce installation cost.
In addition and since the projection of semiconductor chip above expose, so receive the conductive part conducting that makes described projection and substrate on the substrate, enter resin thereby can be suppressed between conductive part and the projection by direct flip chip bonding.As a result, can prevent peeling off between conductive part and the projection, can improve installation reliability, simultaneously, can also reduce the connection resistance between conductive part and the projection.
In addition, in the described semiconductor device, described adhesive resin is thermoplastic resin preferably.
Thus, resin molding has been found good cementability, has excellent function as bonding agent.
In addition, in this semiconductor device, preferably on described thermoplastic resin, comprise heat-curing resin or its a part of composition.
Thus, the thermal endurance of dielectric film improves, and reliability improves.
In addition, in described semiconductor device, can be in also that described semiconductor chip is formed on the wafer and state before the singualtion, and described resin molding is set under the state that the line of cut that makes described wafer exposes.
The unusual difficulty of cutting resin and the wafer that constitutes by silicon together, but if like this line of cut is exposed, then can come as prior art cut crystal easily by the line of cut of prior art.
In addition, in described semiconductor device, also can form mark on described semiconductor chip, described resin molding is provided with under the state that described mark is exposed.
Under the situation of the various marks such as mark that formed incisory mark and welding usefulness on the semiconductor chip, expose by making these marks, can carry out the pattern identical and form with common semiconductor chip.
The mounting structure of semiconductor device of the present invention, weld lobed semiconductor chip having on the substrate of conductive part upside-down mounting, it is characterized in that: the projection of the conductive part of described substrate and chip directly or be situated between and be connected indirectly by electric conducting material, and potting resin not.
According to the mounting structure of this semiconductor device since between conductive part and projection potting resin not, so do not have the danger of peeling off between conductive part and the projection, improved installation reliability, simultaneously, also reduced the connection resistance between conductive part and the projection.
In addition, in the mounting structure of described semiconductor device, preferably between described semiconductor chip outside the projection of the conductive part of described substrate and chip and described substrate, there is resin.
Thus, because that described substrate and semiconductor chip come by described resin is bonding,, be the high mounting structure of reliability so do not have the problem that semiconductor chip has been peeled off.
The mounting structure of second half conductor means of the present invention is characterized in that: the installation method by described semiconductor device forms.
Mounting structure according to this semiconductor device, form by installation method,, can reduce installation cost by not needing aforesaid isolated plant by described semiconductor device, in addition, since between conductive part and projection, do not enter resin, thus the installation reliability raising, simultaneously, also reduced the connection resistance between conductive part and the projection, and then, discharge to the side of semiconductor chip hardly owing to constitute the resin of resin molding, so can carry out high-density installation.
Description of drawings
Fig. 1 (a)～(f) is the specification figure of the installation method of semiconductor device of the present invention;
Fig. 2 is the schematic configuration diagram of the mounting structure of semiconductor device of the present invention;
Fig. 3 is the schematic configuration diagram of semiconductor device of the present invention;
Fig. 4 is the schematic configuration diagram of semiconductor device of the present invention;
Fig. 5 (a)～(c) is the figure that the variation of explanation installation method of the present invention is used.
Among the figure: 1-wafer, 2-semiconductor chip, 3-projection, 4-line of cut, 5 resin beds, the 6-resin molding, 7-substrate, 8-pad (conductive part), 9-pressurized, heated body, 10-fixing body (mounting structure), 11-semiconductor device, 12-semiconductor device, 20-photosensitive heat curing resin bonding thin slice
Specific embodiment
Below, describe the present invention in detail.Fig. 1 (a)～(f) is the process chart that an execution mode of the installation method of explanation semiconductor device of the present invention is used.
In the present embodiment, at first, shown in Fig. 1 (a), the wafer 1 that prepared silicon is made.This wafer 1 has formed the semiconductor chip 2 that constitutes behind the various elements of a plurality of formation, has formed a plurality of protruding 3 in separately active face side on each semiconductor chip 2.Projection 3 is for example formed by the gold that forms by the electric field galvanoplastic, or forms by nickel and the golden stepped construction that is formed by no electric field galvanoplastic, is highly to form for example projection of the cylindric or prism-shaped about 5～30 μ m.In addition, can use known other projectioies such as scolding tin projection that golden lead is processed as spherical lead projection and forms by scolding tin.
Here, wafer before each semiconductor chip 2 of this wafer 1 yes burst, between each semiconductor chip 2,, form line of cut (dicing line) 4 as the zone that does not have the formation semiconductor element relevant with the function of semiconductor chip for each semiconductor chip 2 of burst.In addition, on this wafer 1, in each semiconductor 2 and other zones, though not shown in the figures, form incisory mark and weld the various marks such as mark of usefulness.These mark majorities are circuit-formed aluminium or the copper that is used for semiconductor chip, but are not limited to this, can if can discern.
After having prepared this wafer 1, shown in Fig. 1 (b), in the formation of this wafer 1 resin of photonasty and thermoplasticity is set on the face of protruding 3 sides or forms resin bed 5 by resin material or photosensitive heat curing resin bonding sheet that its precursor constitutes.In the present embodiment, the resin material of usability photosensitiveness and thermoplasticity forms resin bed 5.As the resin of this photonasty and thermoplasticity, for example can enumerate the pi resin.Under the situation of using this pi resin, use form as it, for example can under the state that it is dissolved in the appropriate solvent, use.In addition, as its precursor, can enumerate polyamic acid or amide groups imido etc.For these, use form as it, can use under the state in being dissolved into appropriate solvent.But for this resin material, it uses form can be film like, rather than aqueous, at this moment, and can be by adding suitable interpolation material as required, and described resin material is configured as film like or sheet in advance, come for use.
And then, if the kind of employed resin bed 5 can be carried out the photoelectricity pattern-forming, afterwards, as long as have cementability resin can, for example, can be that the epoxy with thermoplasticity is resin, the BCB with thermoplasticity (ベ Application ゾ シ Network ロ Block テ Application benzocyclobutene), has other known resins such as propylene base system resin of thermoplasticity.In addition, in order to improve thermal endurance, also can comprise heat-curing resin or its a part of composition.
In addition, in the present invention, so-called photonasty to described resin material is meant the photoelectricity lithographic plate etching technique by being undertaken by exposure-processed and development treatment, can carry out pattern-forming, shows as to comprise as the situation of positive type and the situation of negative-type.
Under the use form of described resin material is aqueous situation, pass through known method such as spin-coating method, rolling method, distribution (dispense) method with this resin or by the resin material that its precursor constitutes, be coated to wafer 1 (semiconductor chip) formation on the face of protruding 3 sides, form resin bed 5.In addition, be under film like or the laminar situation, can only form resin bed 5 by pasting.Here, for the formation of this resin bed 5, as described later, make the thickness of resin film after the curing roughly the same with the thickness of projection 3.Therefore, by such formation resin bed 5, and cover projection 3 by resin bed 5.
In addition, under this resin bed 5, especially resin material are aqueous situation, its liquid component is by the air dry local evaporation, but do not reach the state of complete three-dimensional cross-linked curing, at resin material is under film like or the laminar situation, because also only by pasting, so do not reach the state of curing.
On the basis of this state, use the mask (not shown) and by suitable light source (exposure source) this resin bed 5 that exposes selectively.At this moment, as previously mentioned, the resin photonasty partly that constitutes the resin material of resin bed 5 can be that the positive type also can be a negative-type.
Under the situation that is the positive type, only expose in the positive top of illumination projection selectively 3.In addition, at this moment, for the positive top of described line of cut 4, so to incisory mark and the welding usefulness various marks such as mark directly over also carry out illumination simultaneously, expose.And, then by carrying out development treatment, and remove the resin of exposed portion selectively, shown in Fig. 1 (c), make projection 3 above expose, and and then line of cut 4 and described various mark (not shown) are exposed.In addition, like this, under the situation of the resin that has used the positive type, do not remove after the development and residual part basically with exposure before resin bed 5 be identical state.Therefore, especially if this resin bed 5 is aqueous when developing, and in the out of order situation etc., also can carry out the interim cured of drying etc. in advance, afterwards, carry out described exposure-processed.
In addition, be under the situation of negative-type in the photonasty of the resin part of the resin material that constitutes resin bed 5, part is exposed outside the positive top of illumination projection selectively 3.In addition, at this moment, for the positive top of described line of cut 4, so for incisory mark and the welding usefulness various marks such as mark directly over, do not carry out illumination, and only selectively other parts of illumination expose.And, by similarly carrying out development treatment, remove the resin of non-exposed portion selectively, and shown in Fig. 1 (c) with the situation of positive type, make projection 3 above expose, and and then line of cut 4 and described various mark (not shown) are exposed.In addition, like this, under the situation of the resin that has used negative-type, be when having solidified the resin of exposed portion by exposing at this resin temporarily, the interim cured shown in not needing to carry out under positive type situation.But, certainly also can regardless of whether having produced the interim curing that produces by exposure, and the interim cured shown in carrying out under positive type situation.
Then, heat treated has been removed by development and has been wished the resin bed 5 of part, and makes it three-dimensional cross-linked fully, constitutes the resin molding 6 of resin for being made of thermoplastic resin of this resin bed 5.That is, under the situation that resin bed 5 is made of the resin of photonasty and thermoplasticity, by carrying out heat treated, the solvent evaporation of having dissolved this resin is removed, form by thermoplastic resin as main component, for example, the resin molding 6 that the firming body of pi resin constitutes.On the other hand, resin bed 5 by situation about for example constituting as the polyamic acid of the precursor of pi resin and amino imino etc. under, by the heat treated here, carry out the polymerization reaction of dehydrating condensation etc., thereby for example form the resin molding 6 that the firming body by the pi resin constitutes.Therefore, for the condition of the temperature and time of this heat treated etc., kind that can be by resin bed 5 and form etc., experimentizing in advance to wait suitably determines.
Because like this resin molding 6 that forms be a thermoplasticity, so at room temperature be firming body, begin temperature as if the fusion that has surpassed according to decisions such as its compositions, then soften, fusion.By carrying out fusion, wetting expansion on the substrate surface as clung body described later has demonstrated cementability.Begin temperature for fusion, as previously mentioned, though be grouped into and variations such as its degree of polymerization, additive according to the one-tenth of selected thermoplastic resin, the preferred selection or the adjustment material, making it for example is about 50 ℃～400 ℃.This is because if fusion begins temperature and do not reach 50 ℃, then as described later, after being installed in semiconductor chip 2 on the substrate, if this fixing body is exposed to the sun under too high high temperature in user mode, partial melting then, bonding force reduces, and the problem that produces poor flow is arranged between the conductive part of projection 3 and substrate.In addition, if surpassed 400 ℃, then as described later,,, the hurtful problem of componentry of pair semiconductor chip 2 is arranged by making the heat treated of resin molding 6 fusions because when being installed in semiconductor chip 2 on the substrate.
Like this, after resin bed 5 is resin molding 6 as the firming body of thermoplastic resin, cuts along the described line of cut that exposes 4, and shown in Fig. 1 (d), come each semiconductor chip 2 of singualtion.At this moment, though the unusual difficulty of cutting resin and silicon (wafer 1) together as previously mentioned, by the removal resin, exposes line of cut 4, and can by existing cutting saw etc. can be as prior art cut crystal 1 easily.In addition,, can discern, so the location during cutting etc. also are easy to as prior art because line of cut 4 exposes.In addition, at this moment,, can cut easily and accurately by the incisory mark in the described various marks is used as benchmark.As previously mentioned, because the required mark of these identifications can remove by the opening resin molding, so it can Direct Recognition, if, then can carry out high-precision location with its reference mark as the location.It also can use in the mounting process below.
Then, the semiconductor chip after the singualtion 2 is configured in shown in Fig. 1 (e) on the pre-prepd substrate 7, positions.Substrate 7 can use glass and pottery and then be various substrates such as resinous hard substrate and flexible substrate, but especially preferred surface is smooth, and therefore, glass and pottery are best.Position corresponding to the projection 3 of preassembled semiconductor chip 2 on this substrate 7 forms pad (conductive part) 8, and pad 8 is formed with the form that is connected to wiring 8a.
Therefore, when being positioned at semiconductor chip 2 on the substrate 7, the projection 3 of semiconductor chip 2 is docked with described pad 8.At this moment, as previously mentioned, the mark of the welding usefulness in the various marks that expose by use can position easily and accurately.Like this, positioning, and after having loaded semiconductor chip 2 on the substrate 7, by soldering appliance pressurize these substrates 7 and semiconductor chip 2.In addition, soldering appliance is made of the table top (not shown) and the pressurized, heated body shown in Fig. 1 (f) 9 of mounting substrate 7 grades.
In order to use this soldering appliance to carry out the upside-down mounting welding, substrate 7 and semiconductor chip 2 behind the location are loaded on the table top, and under this state, are undertaken by push semiconductor chip 2 sides with pressurized, heated body 9.In addition, also can on described table top, carry out the location of semiconductor chip 2 relative substrates 7.Here, the heating unit of heater etc. also can be set on described table top, and heat described resin molding 6 by heat conduction from substrate 7 sides.In addition, pressurized, heated body 9 has the heating unit of heater etc. within it on portion or the surface element, can wait and carries out lifting by being connected to pneumatic cylinder and oil hydraulic cylinder, thus, brings into play plus-pressure by descending.
On the basis of this formation, substrate 7 that pressurized, heated body 9 will load on the table top (not shown) and semiconductor chip 2 be with the table top clamping, and under this state, pressurize in semiconductor chip 2 sides by the suitable pressure that sets in advance.In addition, at this moment, for the heating unit of table top and pressurized, heated body 9, for being heated to the state of the softening temperature of resin molding 6 fusions.That is, as previously mentioned,,, be than this fusion and begin the high temperature of temperature so heating unit is set because resin molding 6 has been predetermined fusion and begins temperature.But, after having begun the pressurization of being undertaken by pressurized, heated body 9, also can begin the heating of being undertaken by described heating unit certainly.The depth of parallelism of strict control mesa surfaces at this moment,, pressurized, heated body and flatness are important.
Like this, if carry out heating and pressurizing, then the resin molding 6 that forms on the projection 3 formation faces of semiconductor chip 2 heats by the heat conduction from described each heating unit, and fusion is softening.Because semiconductor chip 2 pressurizes by pressurized, heated body 9,, and remain on the state that pushes it therebetween so projection 3 is docked with the pad 8 of substrate 7.And, after the heating and pressurizing of having carried out the predefined time is handled, kept in former state under the state of the pressurization undertaken by pressurized, heated body 9, stop the heating to be undertaken by this pressurized, heated body 9, and then, stop heating from table top, come nature cooling of semiconductor element 2.In addition, also can be by on pressurized, heated body 9 and table top, cooling unit being set, after heating stops, carrying out the cooling undertaken by this cooling unit, and quicken cooling for semiconductor chip 2.
Like this, as if the heating that stops to semiconductor chip 2, cool off, the beginning of state after fusion of then described resin molding 6 is solidified once more.At this moment, when the state of fusion solidifies,, found bonding force, bonded to certainly on the substrate 7 that the result bonds on the substrate 7 semiconductor chip 2, promptly fixes for the bonding of semiconductor chip 2 in the moistening expansion of substrate surface at resin molding 6.Like this, because after resin molding 6 fusions, when solidifying once more, shrink, draw substrate 7 and semiconductor chip 2 mutually so act as by this convergent force.Therefore, the pad 8 of substrate 7 and the projection 3 of semiconductor chip 2 engage under the state that has connected airtight by described convergent force, have guaranteed well to conduct.At this moment, owing to the resin molding 6 that between projection 3 and pad 8, does not exist as dielectric film, thus only just can obtain easily being electrically connected by push pad 8 and projection 3 very weakly, and after installation, also keep good electrical connection.This point is and has used the big different feature of the present invention of engaging of existing resin.
Afterwards, pressurized, heated body 9 is risen, and substrate 7 is moved, and as shown in Figure 2, obtained on substrate 7, installing the fixing body (mounting structure) 10 of the semiconductor device that constitutes behind the semiconductor chip 2 from table top.
Installation method at this semiconductor chip 2 to substrate 7, promptly, in the installation method of semiconductor device, because the resin molding 6 that has formed as bonding agent in semiconductor chip 2 sides works, so, for example can form, therefore by the method that forms by fexible unit of spin coating etc. for the resin bed 5 that forms these resin molding 6 usefulness, by not needing special-purpose device, can realize the reduction of installation cost.
In addition, because under the state that on the projection 3 that makes semiconductor chip 2, exposes, directly flip chip bonding is connected on the substrate 7, and make described protruding 3 with pad 8 conductings of substrate 7, so can between pad 8 and projection 3, not enter resin, therefore, not have the danger of peeling off between pad 8 and the projection 3, when having improved installation reliability, the resistance between pad 8 and the projection 3 also diminishes.Between semiconductor chip and substrate, provide bonding resin to continue to work, absorbed the thermal expansion difference of semiconductor chip and substrate, the raising of device whole reliability is provided as so-called be not full of (underfill).Like this, can also realize not being full of technology simultaneously when being electrically connected.This point also is to install with the upset of being undertaken by existing scolding tin installation method to compare, and has realized the technology that feature of the present invention is arranged of the simplification of technology.
And then, work as bonding agent by the resin molding that will constitute by thermoplastic resin 6, come upside-down mounting welding semiconductor chip 2, so when upside-down mounting is welded, the resin that constitutes resin molding 6 can be discharged (original to the side of semiconductor chip 2 hardly, because resin molding 6 is below the semiconductor chip size, and be thermoplastic film, even so softening more than the Tg point, amount of flow is also little, the bonding agent volume of discharging to the side also can fully be controlled the thickness and the area of bonding agent by photoetching process), therefore, owing on substrate 7, produce the dead angle hardly, thus can shorten and adjacent part between distance, so can carry out high-density installation.
In addition, because in mounting process, not not as prior art, use anisotropy cream (ACP) and anisotropy film (ACF) or nonconductive paste (NCP) and non-conductive film (NCF), so do not need these bonding agents, simultaneously, do not need the configuration technology of these bonding agents, therefore, the cost that can realize mounting process reduces.In addition, can not produce bad that bonding agent by ACF etc. causes, compare with the situation of having used ACF etc. simultaneously, more the lowland suppresses the connection resistance between pad 8 and the projection 3.That is,, be connected by conductive particle, connect the resistance components that resistance has increased conductive particle, but by not filling these conductive particles, can suppress resistance and raise by pad 8 and projection 3 are situated between having used under the situation of ACF etc.
In addition, the interpolation that upside-down mounting welding forms like this on substrate 7 in the technology of semiconductor chip 2 of resin molding 6, do not need new erecting device and mounting process especially, and former state is used original erecting device and mounting process, so do not need new investment, therefore, can avoid cost to raise.
In addition, former state adopts the technology that forms projection 3 as prior art, can also carry out the cutting of wafer 1 and the inspection of semiconductor chip 2 as prior art.
In addition, in the fixing body that obtains like this (mounting structure) 10, by not needing the device of foregoing special use, reduced installation cost, in addition, discharge from the side of semiconductor chip 2 hardly owing to constitute the resin of resin molding 6, so can carry out high-density installation.And then, since between pad 8 and projection 3 potting resin not, so do not have the danger of peeling off between pad 8 and the projection 3, improved installation reliability, simultaneously, the connection resistance between pad 8 and the projection, for example initial resistivity value etc. also diminishes.
In addition, for described resin molding 6, preferably has the thermal coefficient of expansion of the thermal coefficient of expansion that approaches substrate 7, by being this thermal coefficient of expansion, prevented that semiconductor chip 2 that the difference by thermal coefficient of expansion causes from from the peeling off of substrate 7, can improve installation reliability.
In addition, in said embodiment, carry out the installation and pad 8 be connected (conduct) with projection 3 of semiconductor chip 2 by resin molding 6 to substrate 7, but the present invention is not limited to this, for example use the welding material (soft soldering connects material) of Pb-free solder etc., and make its filling as pad 8 and projection 3.
Promptly, receive on the described substrate 7 at semiconductor chip 2 flip chip bondings that will form described resin molding 6, when the pad 8 of the projection 3 of semiconductor chip 2 and substrate 7 is conducted, by the welding material of Pb-free solder etc. is set at least one side of pad 8 and projection 3 in advance, conduct pad 8 and projection 3 by welding material and can be situated between.
In the execution mode shown in Fig. 1 (a)～(f), the pad 8 of substrate 7 and the projection of semiconductor chip 23 are by the bonding force of resin molding 6, convergent force when being resin molding 6 melting and solidifications comes drawing each other, under crimped status, connect, in this example that connects by welding material that is situated between, can obtain firmer joint (metal bond).In addition, heating when making resin molding 6 fusions makes the welding material fusion, cooling (natural cooling) when resin molding 6 is solidified afterwards, welding material is solidified, so in the burden that increases hardly on the technology in the processing that causes by the interpolation welding material, therefore, avoid the reduction of productivity ratio and cost to improve, can obtain described effect.
In addition, preferably use in the following melt metal of the melt temperature of resin molding 6 as described welding material, the lower metals of its fusing point such as metal of the metal of bismuth system or indium system for example, especially the metal that the fusion of using fusing point to approach resin molding 6 begins temperature can be simplified more by the described fusion of thermosetting and the cured again of adding, so preferred.In addition, as described welding material can be to use zinc-plated metal using on the projection on gold-plated, the pad at substrate, or use gold-plated metal (Jin-Jin engages) using on the projection on gold-plated, the pad 8, or the form of using gold-ITO (indium tin oxide) to engage at substrate.Under the situation that is not having to use in the above-mentioned grade of the following melt metal of melt temperature of resin molding 6, but the also surface activation joining technique or the ultrasonic wave joining technique that form by plasma of dual-purpose.Its mode as the cementability that improves resin molding and substrate surface is effective, and does not leave the joint of the pad of projection and substrate.
In addition, especially at the wafer 1 shown in Fig. 1 (c), promptly as shown in Figure 3, in the semiconductor device 11 of the present invention, because as previously mentioned, resin molding 6 is provided with under the state that the line of cut that makes described wafer 1 exposes, so can be by existing cutting saw like prior art cut crystal 1 like that easily.As previously mentioned, because the required mark of these identifications can remove by the opening resin molding, so it can Direct Recognition, if with its reference mark as the location, side can be carried out high-precision location.It also can be used in the mounting process of next time.
In addition, semiconductor chip 2 after the singualtion shown in Fig. 1 (d), promptly as shown in Figure 4, in the semiconductor device 12 of the present invention, as previously mentioned, work as bonding agent by the resin molding that will constitute by thermoplastic resin 6, that is, at heating and melting cool off behind the resin molding 6 and solidify once more, and can be on substrate 7 upside-down mounting welding semiconductor chip 2.In addition, at this moment, discharge from the side of semiconductor chip 2 hardly,, therefore, can carry out high-density installation by using this semiconductor device 12 so produce the dead angle on the substrate 7 hardly owing to constitute the resin of resin molding 6.
In addition, for the resin bed 5 that forms described resin molding 6 usefulness, for example, can form by the method for being undertaken of spin coating etc. by fexible unit, therefore, by using this semiconductor device 12, do not need special-purpose device during installation, therefore, can realize the reduction of installation cost.
In addition and since the projection 3 of semiconductor chip 2 above expose, so receive on the substrate 7 by direct flip chip bonding, and make described protruding 3 with pad 8 conductings of substrate 7, enter resin thereby can be suppressed between pad 8 and the projection 3.As a result, can prevent peeling off between pad 8 and the projection 3, can improve installation reliability, simultaneously, also can reduce the connection resistance between pad 8 and the projection 3.
In addition, in this semiconductor device 12, forming especially on the semiconductor chip 2 under the situation of mark, described resin molding 6 preferably is being set under the state that described mark is exposed.
Having formed on the semiconductor chip 2 under the situation of cutting with the various marks such as mark of mark and welding usefulness, expose by making these marks, and can similarly weld with common semiconductor chip 2, therefore, can make this processing become easy.
In addition, in this semiconductor device 12,, as previously mentioned, roughly the same with the height of projection 3 for the thickness (highly) of described resin molding 6.Under situation than projection 3 thick slightly (height), when being installed in this semiconductor device 12 (semiconductor chip 2) on the substrate 7, discharged the bubble that on the bonding plane of resin molding 6, exists reliably, therefore, be bonded in more well between substrate 7 and the resin molding 6, improved installation reliability.
In addition, under situation than projection 3 thin slightly (low), projection 3 is fully exposed from resin molding 6, therefore, when mounted, prevented that reliably projection 3 resin molding 6 on every side from entering into the problem between projection 3 and the pad 8, thus, conducting between projection 3 and the pad 8 is more reliable, simultaneously, has also suppressed the increase of resistance therebetween reliably.In addition, especially adopting under the situation of flexible substrate that forms by resin etc. as substrate 7, because substrate 7 bending to a certain degree when heating and pressurizing, so like this by projection 3 is fully exposed, it is preferred making the more reliable situation that conducts between projection 3 and the pad 8.
In addition, under the thickness that makes described resin molding 6 (highly) situation consistent, can expect the effect under the described high slightly situation simultaneously and hang down effect under the situation slightly with projection 3 height.Select one of them to decide according to paying attention to which characteristic.
In addition, the present invention is not limited to described execution mode, only otherwise break away from spirit of the present invention, can carry out various changes.For example, the resin material of usability photosensitiveness and thermoplasticity has formed resin bed 5 in said embodiment, but also can replace this, and usability photosensitiveness heat reactive resin adhesive sheet forms resin bed 5.Chip is at low temperature (for example relatively for this photosensitive heat curing resin bonding thin slice, in 50～100 ℃ the scope) under carry out bonding, in addition, owing to be photonasty, so can carry out pattern-forming by the photoelectricity lithography technique, and then, after pattern forms, have cementability, also have Thermocurable simultaneously.
In order to use this photosensitive heat curing resin bonding thin slice to form resin bed 5, shown in Fig. 5 (a), the wafer 1 that prepared silicon is made, then, in the formation of this wafer 1 on the face of protruding 3 sides shown in Fig. 5 (b), use the hot-roll lamination device to wait bonding photosensitive heat curing resin bonding thin slice 20.Here, a face covers by the peeling sheet (not shown) in this photosensitive heat curing resin bonding thin slice 20, after having bonded to another face on the wafer 1, becomes resin bed 5 by removing peeling sheet.Here, because only bonding this resin bed 5, so do not reach the state of curing.
Like this, identical with situation shown in Figure 1 after having formed resin bed 5 by photosensitive heat curing resin bonding thin slice 20, use the mask (not shown) to expose selectively by suitable light source (exposure source).After having carried out exposure, prepare heating as required like this, after interim curing, wait and develop by metal ethyl ketone (K), and shown in Fig. 5 (c), make projection 3 above expose, and then, line of cut 4 and various mark (not shown) are exposed.In addition, in the example that has used this photosensitive heat curing resin bonding thin slice 20, the resin bed 5 after the pattern that obtains after the development forms is the resin molding 6 with cementability of the present invention.
Below, identical with situation shown in Figure 1, by using described resin molding 6, and it is worked as bonding agent, thereby 2 flip chip bondings of the semiconductor chip after the singualtion are received on the substrate 7.Concrete, for example 150 ℃ of following heating and pressurizing one hour, and make described resin molding (photosensitive heat curing resin bonding thin slice 20) 6 hot curings by described soldering appliance.
Like this,,, thereby compare, can simplify technology with example shown in Figure 1 then by being the resin molding 6 that still has cementability if usability photosensitiveness heat reactive resin adhesive sheet 20 forms resin beds 5.
Claims (8)
1, a kind of installation method of semiconductor device welds lobed semiconductor chip having on the substrate of conductive part upside-down mounting, it is characterized in that possessing:
The step that forms resin bed on the face that convexes to form at described semiconductor chip with photonasty and cementability;
By the described resin bed that exposes, and and then develop, remove the resin on the positive top of described projection, and make the projection the step of exposing above;
Receive on the described substrate by the semiconductor chip flip chip bonding that will form the resin molding that constitutes by described resin bed, and the pressurized, heated by the pressurized, heated body, described resin molding is worked as bonding agent, thus the step that the conductive part of the projection of described semiconductor chip and described substrate is conducted.
2, the installation method of semiconductor device according to claim 1 is characterized in that:
Described resin is the resin of photonasty and thermoplasticity, or the resin that is made of its precursor;
Possess by the described resin bed of heat treated, make the resin that constitutes this resin bed step for the resin molding that constitutes by thermoplastic resin.
3, the installation method of semiconductor device according to claim 2 is characterized in that:
The a part of composition that in the resin of described photonasty and thermoplasticity or the resin material that constitutes by the precursor of the resin of photonasty and thermoplasticity, contains heat-curing resin or heat-curing resin.
4, the installation method of semiconductor device according to claim 1 is characterized in that:
Described resin bed is formed by photosensitive heat curing resin bonding thin slice.
5, according to the installation method of the semiconductor device described in each of claim 1～4, it is characterized in that:
Described semiconductor chip is formed on the wafer and under the situation of the state before carrying out singualtion being in, remove the resin on the positive top of described projection, make in the step of exposing above of projection, also remove the resin on positive top of the line of cut of described wafer simultaneously, described line of cut is exposed.
6, according to the installation method of the semiconductor device described in each of claim 1～4, it is characterized in that:
Mark is being formed under the situation of described semiconductor chip, is removing the resin on the positive top of described projection, making in the step of exposing above of projection, also removing the resin on positive top of the mark of described semiconductor chip simultaneously, described mark is exposed.
7, according to the installation method of the semiconductor device described in each of claim 1～4, it is characterized in that:
Receive on the described substrate at the semiconductor chip flip chip bonding that will form described resin molding, make in the step that the conductive part of the projection of described semiconductor chip and described substrate conducts, being situated between conducts described projection and described conductive part by welding material.
8, a kind of mounting structure of semiconductor device is characterized in that:
Installation method by the semiconductor device described in each of claim 1～7 forms.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004268116 | 2004-09-15 | ||
| JP2004268116 | 2004-09-15 | ||
| JP2005088713 | 2005-03-25 | ||
| JP2005210056 | 2005-07-20 |
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| CN100447971C true CN100447971C (en) | 2008-12-31 |
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| CNB2005100999952A Expired - Fee Related CN100447971C (en) | 2004-09-15 | 2005-09-13 | Method for mounting semiconductor device, semiconductor device and its mounting structure |
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| CN101231961B (en) * | 2008-02-21 | 2010-11-17 | 日月光半导体制造股份有限公司 | Basal plate making process of inner embedded component |
| CN103021880B (en) * | 2011-09-22 | 2015-07-08 | 株式会社东芝 | Manufacture method for semiconductor device |
| CN113441362B (en) * | 2020-03-27 | 2022-10-18 | 比亚迪股份有限公司 | Gluing mold and bonding method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5318651A (en) * | 1991-11-27 | 1994-06-07 | Nec Corporation | Method of bonding circuit boards |
| US5925936A (en) * | 1996-02-28 | 1999-07-20 | Kabushiki Kaisha Toshiba | Semiconductor device for face down bonding to a mounting substrate and a method of manufacturing the same |
| CN1396640A (en) * | 2001-07-16 | 2003-02-12 | 联测科技股份有限公司 | Method for packaging thin semiconductor device with reversely mounted chip |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5318651A (en) * | 1991-11-27 | 1994-06-07 | Nec Corporation | Method of bonding circuit boards |
| US5925936A (en) * | 1996-02-28 | 1999-07-20 | Kabushiki Kaisha Toshiba | Semiconductor device for face down bonding to a mounting substrate and a method of manufacturing the same |
| CN1396640A (en) * | 2001-07-16 | 2003-02-12 | 联测科技股份有限公司 | Method for packaging thin semiconductor device with reversely mounted chip |
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