CN109988676A - A kind of cleaning solution, preparation method and application - Google Patents
A kind of cleaning solution, preparation method and application Download PDFInfo
- Publication number
- CN109988676A CN109988676A CN201910332448.6A CN201910332448A CN109988676A CN 109988676 A CN109988676 A CN 109988676A CN 201910332448 A CN201910332448 A CN 201910332448A CN 109988676 A CN109988676 A CN 109988676A
- Authority
- CN
- China
- Prior art keywords
- cleaning solution
- variety
- poss
- chloropropyl
- mpeg
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 65
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 230000007797 corrosion Effects 0.000 claims abstract description 25
- 238000005260 corrosion Methods 0.000 claims abstract description 25
- 239000002994 raw material Substances 0.000 claims abstract description 17
- 239000004094 surface-active agent Substances 0.000 claims abstract description 13
- 239000003963 antioxidant agent Substances 0.000 claims abstract description 9
- 230000003078 antioxidant effect Effects 0.000 claims abstract description 9
- 239000002738 chelating agent Substances 0.000 claims abstract description 8
- ZZVUWRFHKOJYTH-UHFFFAOYSA-N diphenhydramine Chemical compound C=1C=CC=CC=1C(OCCN(C)C)C1=CC=CC=C1 ZZVUWRFHKOJYTH-UHFFFAOYSA-N 0.000 claims abstract description 8
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229960001231 choline Drugs 0.000 claims abstract description 5
- HMYSZCUBPFGRRO-UHFFFAOYSA-N O-ethylhydroxylamine hydrate Chemical class CCON.O HMYSZCUBPFGRRO-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000010949 copper Substances 0.000 claims description 35
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 34
- 229910052802 copper Inorganic materials 0.000 claims description 33
- 238000005498 polishing Methods 0.000 claims description 18
- 125000001453 quaternary ammonium group Chemical group 0.000 claims description 12
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 12
- DJFBJKSMACBYBD-UHFFFAOYSA-N phosphane;hydrate Chemical group O.P DJFBJKSMACBYBD-UHFFFAOYSA-N 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- -1 guanidine compound Chemical group 0.000 claims description 9
- 102000019197 Superoxide Dismutase Human genes 0.000 claims description 8
- 108010012715 Superoxide dismutase Proteins 0.000 claims description 8
- 235000006708 antioxidants Nutrition 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims description 7
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 6
- 125000000217 alkyl group Chemical group 0.000 claims description 6
- 239000003638 chemical reducing agent Substances 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 5
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical group C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 claims description 4
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 4
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 claims description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- CHJJGSNFBQVOTG-UHFFFAOYSA-N N-methyl-guanidine Natural products CNC(N)=N CHJJGSNFBQVOTG-UHFFFAOYSA-N 0.000 claims description 4
- ZRALSGWEFCBTJO-UHFFFAOYSA-N anhydrous guanidine Natural products NC(N)=N ZRALSGWEFCBTJO-UHFFFAOYSA-N 0.000 claims description 4
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- SWSQBOPZIKWTGO-UHFFFAOYSA-N dimethylaminoamidine Natural products CN(C)C(N)=N SWSQBOPZIKWTGO-UHFFFAOYSA-N 0.000 claims description 4
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims description 4
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- PFTAWBLQPZVEMU-DZGCQCFKSA-N (+)-catechin Chemical compound C1([C@H]2OC3=CC(O)=CC(O)=C3C[C@@H]2O)=CC=C(O)C(O)=C1 PFTAWBLQPZVEMU-DZGCQCFKSA-N 0.000 claims description 2
- KYVBNYUBXIEUFW-UHFFFAOYSA-N 1,1,3,3-tetramethylguanidine Chemical compound CN(C)C(=N)N(C)C KYVBNYUBXIEUFW-UHFFFAOYSA-N 0.000 claims description 2
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims description 2
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims description 2
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 claims description 2
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 claims description 2
- 239000004475 Arginine Substances 0.000 claims description 2
- ODKSFYDXXFIFQN-BYPYZUCNSA-P L-argininium(2+) Chemical compound NC(=[NH2+])NCCC[C@H]([NH3+])C(O)=O ODKSFYDXXFIFQN-BYPYZUCNSA-P 0.000 claims description 2
- 108090000913 Nitrate Reductases Proteins 0.000 claims description 2
- 108010025915 Nitrite Reductases Proteins 0.000 claims description 2
- 102000007456 Peroxiredoxin Human genes 0.000 claims description 2
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 claims description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 2
- ODKSFYDXXFIFQN-UHFFFAOYSA-N arginine Natural products OC(=O)C(N)CCCNC(N)=N ODKSFYDXXFIFQN-UHFFFAOYSA-N 0.000 claims description 2
- 229960005070 ascorbic acid Drugs 0.000 claims description 2
- 235000010323 ascorbic acid Nutrition 0.000 claims description 2
- 239000011668 ascorbic acid Substances 0.000 claims description 2
- ADRVNXBAWSRFAJ-UHFFFAOYSA-N catechin Natural products OC1Cc2cc(O)cc(O)c2OC1c3ccc(O)c(O)c3 ADRVNXBAWSRFAJ-UHFFFAOYSA-N 0.000 claims description 2
- 235000005487 catechin Nutrition 0.000 claims description 2
- 229950001002 cianidanol Drugs 0.000 claims description 2
- 229940074391 gallic acid Drugs 0.000 claims description 2
- 235000004515 gallic acid Nutrition 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229940102253 isopropanolamine Drugs 0.000 claims description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 2
- 239000011976 maleic acid Substances 0.000 claims description 2
- 125000000325 methylidene group Chemical group [H]C([H])=* 0.000 claims description 2
- 108030002458 peroxiredoxin Proteins 0.000 claims description 2
- UXRVNHHPRRDXJG-UHFFFAOYSA-M phosphane tetrabutylazanium hydroxide Chemical class P.[OH-].C(CCC)[N+](CCCC)(CCCC)CCCC UXRVNHHPRRDXJG-UHFFFAOYSA-M 0.000 claims description 2
- 229940079877 pyrogallol Drugs 0.000 claims description 2
- 238000003756 stirring Methods 0.000 claims description 2
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 claims description 2
- RMVRSNDYEFQCLF-UHFFFAOYSA-N thiophenol Chemical compound SC1=CC=CC=C1 RMVRSNDYEFQCLF-UHFFFAOYSA-N 0.000 claims description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims 2
- 101710088194 Dehydrogenase Proteins 0.000 claims 1
- 102000006587 Glutathione peroxidase Human genes 0.000 claims 1
- 108700016172 Glutathione peroxidases Proteins 0.000 claims 1
- 108010027912 Sulfite Oxidase Proteins 0.000 claims 1
- 102000043440 Sulfite oxidase Human genes 0.000 claims 1
- 239000001384 succinic acid Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 15
- 239000000243 solution Substances 0.000 description 48
- 230000000052 comparative effect Effects 0.000 description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 13
- 238000000034 method Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000002585 base Substances 0.000 description 8
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000006061 abrasive grain Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000001514 detection method Methods 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000010998 test method Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000003513 alkali Substances 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 238000001914 filtration Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- 229940126062 Compound A Drugs 0.000 description 2
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 239000000908 ammonium hydroxide Substances 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000012459 cleaning agent Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 101000836247 Aquifex pyrophilus Superoxide dismutase [Fe] Proteins 0.000 description 1
- 102000004190 Enzymes Human genes 0.000 description 1
- 108090000790 Enzymes Proteins 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 102000003992 Peroxidases Human genes 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 102000019259 Succinate Dehydrogenase Human genes 0.000 description 1
- 108010012901 Succinate Dehydrogenase Proteins 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 229960001484 edetic acid Drugs 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000006210 lotion Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- HZBAVWLZSLOCFR-UHFFFAOYSA-N oxosilane Chemical compound [SiH2]=O HZBAVWLZSLOCFR-UHFFFAOYSA-N 0.000 description 1
- 108040007629 peroxidase activity proteins Proteins 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000010695 polyglycol Substances 0.000 description 1
- 229920000151 polyglycol Polymers 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 108090000765 processed proteins & peptides Proteins 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000012956 testing procedure Methods 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/82—Compounds containing silicon
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0073—Anticorrosion compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2003—Alcohols; Phenols
- C11D3/2006—Monohydric alcohols
- C11D3/2034—Monohydric alcohols aromatic
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
- C11D3/2082—Polycarboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2096—Heterocyclic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/28—Heterocyclic compounds containing nitrogen in the ring
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/33—Amino carboxylic acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/34—Organic compounds containing sulfur
- C11D3/349—Organic compounds containing sulfur additionally containing nitrogen atoms, e.g. nitro, nitroso, amino, imino, nitrilo, nitrile groups containing compounds or their derivatives or thio urea
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/36—Organic compounds containing phosphorus
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/38—Products with no well-defined composition, e.g. natural products
- C11D3/386—Preparations containing enzymes, e.g. protease or amylase
- C11D3/38636—Preparations containing enzymes, e.g. protease or amylase containing enzymes other than protease, amylase, lipase, cellulase, oxidase or reductase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Emergency Medicine (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Detergent Compositions (AREA)
Abstract
The invention discloses a kind of cleaning solution, preparation method and applications.The cleaning solution, its raw material includes the component of following mass fraction: the highly basic of 0.01%-25%, the hydramine of 0.01%-30%, the corrosion inhibiter of 0.01%-10%, the chelating agent of 0.01%-10%, the surfactant of 0.01%-5%, the antioxidant of 0.002%-0.1%, Yi Jishui, and the sum of each component mass fraction is 100%；The surfactant is the modified chloropropyl-POSS of MPEG.Surfactant of the invention promotes the performance of cleaning solution in all fields, and especially when highly basic is choline or three (2- ethoxy) ammonium hydroxides, effect is fine, greatly promotes in terms of bio-compatibility.
Description
Technical field
The present invention relates to a kind of cleaning solution, preparation method and applications.
Background technique
Chemically mechanical polishing or planarization (" CMP ") are one of process for fabrication of semiconductor device technologies, from microelectronics
The technical process that material is removed on device wafer surface, to achieve the purpose that surface is polished (planarization).Currently, CMP skill
Most widely application is the throwing of (ULSI) to basis material silicon wafer in integrated circuit (IC) and super large-scale integration to art
Light.And in the world it is believed that device feature size is at 0.35 μm or less, it is necessary to carry out leveling to guarantee photoetching shadow
The accuracy of Image relaying.
But using being easy to have left impurity on semiconductor substrate surface after CMP method.In order to avoid device reliability drop
It is low, and in order to avoid introducing the defect that yield can be made to reduce, it is necessary to this is removed before carrying out following process to semiconductor substrate
A little impurity.Therefore people develop the rear CMP cleaning solution of the substrate surface for cleaning the residual layer of CMP.
CMP is cleaned after traditionally being carried out with the alkaline solution based on ammonium hydroxide.Current most of CMP, which are used in, contains aluminium, button
On the surface of oxide.But when manufacturing semiconductor, copper has become the material of production chip.Traditional rear CMP method is not
It is enough to clean copper-based chip or is easy to cause copper surface to be corroded during cleaning.
The cleaning formulation that can be used for copper metallic face describes in patent CN1433567A and CN101146901B, it includes
Tetramethylammonium hydroxide (TMAH), monoethanolamine (MEA), copper corrosion inhibitor and water.Although this formula presses down comprising copper corrosion
Preparation, but a disadvantage is that the easy deterioration when contacting oxygen, and this color that will lead to formulation is dimmed, as a result may make clear
Disability is washed, cleaning agent no longer has significant effect.In addition, in the case where contacting oxygen for a long time in the process of cleaning, it must
It so will appear this phenomenon.Therefore, it in order to avoid cleaning agent contacts oxygen, needs to be protected in nitrogen atmosphereDown or use other Reasonable means, but these can all make condition harsh and economic cost increases.Therefore, it is necessary to one kind to be used for copper-based chip
CMP after cleaning solution.Cleaning solution needs substantially can be effectively by essentially all of in target surface after such CMP
Grain is removed and can be prevented to the corrosion containing copper chip.
In addition, cleaning solution contains tetramethylammonium hydroxide (TMAH) mostly after CMP currently on the market, toxicity is big, raw
Object poor compatibility, therefore urgently develop cleaning solution after the good CMP of a kind of cleaning, burn into timeliness, bio-compatibility.
Summary of the invention
The technical problem to be solved by the present invention is to cleaning, the burn into timeliness, biology in order to overcome existing cleaning solution
The defects of compatibility is poor, and provide a kind of cleaning solution, preparation method and application.Cleaning solution of the invention is in each side
The performance in face is promoted.
The present invention is mainly to solve above-mentioned technical problem by following technological means.
The present invention provides a kind of cleaning solution, raw material includes the component of following mass fraction: 0.01%-25%'s is strong
The surface of alkali, the hydramine of 0.01%-30%, the corrosion inhibiter of 0.01%-10%, the chelating agent of 0.01%-10%, 0.01%-5%
Activating agent, the antioxidant of 0.001%-1%, Yi Jishui, the sum of each component mass fraction are 100%；The surface-active
Agent is the modified chloropropyl-POSS of MPEG.
Wherein, the mass fraction of the highly basic is preferably 1%-20%, such as 5%-15%.The quality of the hydramine
Score is preferably 1%-10%, for example, 5%-8%.The mass fraction of the corrosion inhibiter is preferably 0.1%-1%, for example,
0.5%-0.8%.The mass fraction of the chelating agent is preferably 0.1%-1%, for example, 0.3%-0.9%.The table
The mass fraction of face activating agent is preferably 0.1%-1%, for example, 0.2%-0.7%.The mass fraction of the antioxidant
Preferably 0.002%-0.1%, for example, 0.005%-0.01%.
Wherein, in the cleaning solution, the dosage that the sum of each component mass fraction is 100%, Gu Shui is preferably each to supply
The sum of constituent mass score is 100% meter.
Wherein, the highly basic can be the conventional highly basic of this field, preferably in quaternary ammonium base, quaternary phosphonium hydroxide and guanidine compound
It is one or more.
The quaternary ammonium base is preferably the quaternary ammonium base for having hydroxyl substituent on tetraalkyl quaternary ammonium base and/or alkyl.
The tetraalkyl quaternary ammonium base is preferably in tetramethylammonium hydroxide, tetrapropylammonium hydroxide and tetrabutylammonium hydroxide
It is one or more.
The quaternary ammonium base for having hydroxyl substituent on the alkyl is preferably choline, (2- hydroxyethyl) trimethylammonium hydroxide
With one of three (2- ethoxy) ammonium hydroxides or a variety of.
The quaternary phosphonium hydroxide is preferably to have hydroxyl substituent quaternary phosphonium hydroxide on four Wan Ji quaternary phosphonium hydroxides and/or alkyl；
The four preferred tetrabutylammonium hydroxide phosphines of Wan Ji quaternary phosphonium hydroxide；
The preferred tetramethylguanidine of guanidine compound.
Wherein, the hydramine can be this field conventional hydramine, preferably monoethanolamine, diglycolamine, triethanolamine,
One of isobutyl hydramine and isopropanolamine are a variety of.
Wherein, the corrosion inhibiter can be the conventional corrosion inhibiter of this field, preferably 2-mercaptobenzothiazole, 3- sulfydryl benzene
And one of thiazole, 4- mercaptobenzothiazoler, 5- mercaptobenzothiazoler, catechol, pyrogallol and 5- Aminotetrazole or
It is a variety of.
Wherein, the chelating agent can be this field conventional cheating agents, preferably malonic acid, maleic acid, arginine and
One of EDTA or a variety of.
Wherein, chloropropyl-POSS, MPEG- that the MPEG modified chloropropyl-POSS can be modified for MPEG-400
Chloropropyl-the POSS of chloropropyl-POSS, the MPEG-600 of 500 modifications modified chloropropyl-POSS, MPEG-750 modification,
One of MPEG-1000 modified chloropropyl-POSS and MPEG-2000 modified chloropropyl-POSS or a variety of, preferably
MPEG-400 modified chloropropyl-POSS, MPEG-500 modified chloropropyl-POSS and MPEG-600 modified chloropropyl-
One of POSS or a variety of, more preferably MPEG-500 modified chloropropyl-POSS.
The antioxidant can be this field routine antioxidant, preferably antioxidase or antioxidase and and also
The mixture of former agent.The antioxidase can be the antioxidase of this field routine, preferably superoxide dismutase (SOD), paddy
The sweet peptide peroxidase (GSH-PX) of Guang, thioredoxin peroxidase, succinate dehydrogenase, nitrate reductase, sulfurous acid are also
Protoenzyme, nitrite reductase and N5,N10One of methylene blue-light treatment (FAD) is a variety of.The super oxygen discrimination
Changing enzyme can be Cu-Zn-SOD (CuZn-SOD), Mn-SOD (Mn-SOD) and iron content super oxygen
One of compound mutase (Fe-SOD) is a variety of, more preferable Cu-Zn-SOD.The reducing agent can
For the conventional reduction agent of this field, preferably one of ascorbic acid, gallic acid and catechin or a variety of.
When the mixture of the preferred antioxidase of antioxidant and reducing agent, the dosage of antioxidase and reducing agent is not made to have
Body limits.Wherein, one of the preferred deionized water of the water, distilled water, pure water and ultrapure water or a variety of (such as two kinds).
In a preferred embodiment of the invention, the cleaning solution, raw material components are by the alkali, the alcohol
Amine, the corrosion inhibiter, the reducing agent, the chelating agent, the surfactant and water composition, each component quality
The sum of score is 100%.
The present invention also provides the preparation methods of the cleaning solution described in one kind comprising the following steps: by the raw material
Mixing.Solid component in the raw material components is preferably added in liquid component by the mixing, and stirring is equal
It is even.The mixed temperature is room temperature.After the mixing, oscillation, the behaviour of filtering are preferably further comprised
Make.The purpose of oscillation is to be sufficiently mixed each raw material component, and hunting speed and time are unlimited.Filtering is insoluble in order to remove
Object.
The present invention also provides the answering in the semiconductor devices after cleaning chemically mechanical polishing of the cleaning solution described in one kind
With.Wherein one of the described preferably copper-based chip of semiconductor devices, cobalt-based chip and tungsten base chip or a variety of.Described answers
With preferably including the following steps: the semiconductor devices after chemically mechanical polishing is contacted with cleaning solution.
Room temperature refers to 10-30 DEG C in the present invention.
In the present invention, EDTA is ethylenediamine tetra-acetic acid (CAS:60-00-4)；MPEG is poly glycol monomethyl ether.Chloropropyl-
POSS (CAS:161678-38-2).
Without prejudice to the field on the basis of common sense, above-mentioned each optimum condition, can any combination to get the present invention it is each preferably
Example.
The reagents and materials used in the present invention are commercially available.
The positive effect of the present invention is that: cleaning solution of the invention is made clear by adding specific surfactant
The performance of washing lotion in all fields is promoted, and is especially choline or three (2- ethoxy) ammonium hydroxide timeliness in alkali
Fruit is fine, and bio-compatibility greatly promotes.
Specific embodiment
The present invention is further illustrated below by the mode of embodiment, but does not therefore limit the present invention to the reality
It applies among a range.In the following examples, the experimental methods for specific conditions are not specified, according to conventional methods and conditions, or according to quotient
The selection of product specification.
In following embodiment and comparative examples, the preparation method of cleaning solution includes the following steps: to mix corresponding raw material, i.e.,
It can.
In following embodiments, concrete operations temperature is not limited, is each meant and is carried out at room temperature.
I, the preparation method embodiment of cleaning solution
One, the preparation of surfactant
Surfactant is specifically shown in the specific embodiment of the patent using the preparation method in patent CN101648123B
Part；Wherein compound A and chloropropyl-POSS is raw material, and the reaction mass ratio of the two is 1:8.Wherein, chloropropyl-POSS
(No. CAS: 161678-38-2) is commercially available, can also be prepared with method in patent CN101648123B.
The compound A of the preparation surfactant B of table 1 and corresponding surfactant B
Two, the preparation method embodiment of cleaning solution
The raw material components of table 2 are uniformly mixed by the mass fraction in table.Wherein, the mixing generally will be described
Solid component in raw material components is added in liquid component, is stirred evenly.The mixing is generally by the original
Solid component in material component is added in liquid component, is stirred evenly.The mixed temperature is room temperature.It is described
Mixing after, generally further comprise oscillation, the operation of filtering.The purpose of oscillation is to keep each raw material component sufficiently mixed
It closes, hunting speed and time are unlimited.Filtering is to remove insoluble matter.
In following table 2 and table 4, the constituent species in each embodiment further include water.
Constituent species in each embodiment of table 2
The mass fraction of 3 each raw material component of table
" surplus " in table is in each embodiment, and 100% subtracts the mass percent of other components in addition to water.
Comparative example 1-15
The each raw material component of 4 cleaning solution of table
[in upper table, compound D1:1- (3- sulfydryl) propyl -3,5,-eight siloxanes of 7,9,11,13,15- isobutyl group, penta ring
(CAS 480438-85-5)；Compound D2: eight (three oxosilane of aminophenyl) (CAS 518359-82-5)]
The mass fraction of 5 each raw material component of table
Effect example
One, the preparation of copper-based chip:
1, pre-treatment: to wafer after 8 cun of plating Cu (plating copper thickness about 1um), using 10%H2SO4In 25 DEG C of processing 2min；
2, it is dried with nitrogen after pure water cleaning；
Two, it polishes:
Polishing machine platform is 8 " Mirra, polishing disk and rubbing head revolving speed 93/87rpm, polishes flow velocity 150ml/min, and copper is thrown
Polishing pad used in light is IC1010, and polishing pad used in barrier polishing is Fujibo H7000.Copper polishing fluid is AEP U3000,
Barrier polishing solution is TCU2000H4.Ready copper-based chip is processed by shot blasting.
Three, testing procedure:
(1) detection of ER
Test method 1:
1, by the copper-based chip cutting after polishing at the square piece of 3cm*3cm；
2, the thickness of copper-based chip and its functional relation of resistivity are measured using four-point probe instrument, generate regression curve,
And determine the functional relation of copper thickness and resistivity, for calculating copper corrosion rate；
3, immersion 1min is carried out at 25 DEG C using 50ml cleaning solution to be corroded；
4, then four-point probe instrument measuring resistance calculates the metal thickness variation of corrosion front and back, and calculates corrosion rate.
Test method 2:
1, by the copper-based chip cutting after polishing at the square piece of 1cm*1.5cm；
2, using chi660e electrochemical workstation, by treated, copper-based chip carries out electric current corruption in 50ml cleaning solution
The Tafel curve of erosion is tested.
The critical data of 6 Tafel curve of table
| Number | Corrosion potentials (V) | Corrosion current (10-5A) |
| Comparative example 5 | -0.395 | 4.235 |
| Comparative example 7 | -0.387 | 3.873 |
| Comparative example 8 | -0.393 | 3.362 |
| Embodiment 5 | -0.317 | 1.738 |
The critical data of Tafel curve is as shown in table 6, can be with from the data comparison of contrast effect example and implementation result example
Find out, corrosion potentials are shuffled, and corrosion current is negative to be moved, and show that the corrosion mitigating effect of cleaning solution is obviously improved.
(2) surface corrosion detects
Test method:
1, by the copper-based chip cutting after polishing at the square piece of 3cm*3cm；
2,1min is impregnated at 25 DEG C using cleaning solution to be corroded；
3, atomic force microscope (AFM) test is carried out to chip copper-based after corrosion, tests its RMS value.
(3) cleaning ability detects
Test method 1:
1, by the copper-based chip cutting after polishing at the square piece of 3cm*3cm；
2, in cleaning solution at 25 DEG C soaking and washing 2min；
3, it is observed under SEM.
Test method 2:
The removal ability of abrasive grains: abrasive grains are added in cleaning solution and measure abrasive grains in the Zeta potential of solution
ξ, the absolute value of Zeta potential | ξ | lower, the easier reunion of abrasive grains, easily cleaned brush is walked and is not easy in the process of cleaning
It is adsorbed on wafer surface, cleaning solution is stronger to the removal ability of abrasive grains.
(4) BTA removal ability
Detection method 1:
1, by the copper-based chip cutting after polishing at the square piece of 3cm*3cm；
2, using 3% citric acid in 25 DEG C of processing 2min；It is used after impregnating 25 DEG C of processing 2min of copper sheet with 1+1 nitric acid solution
Surface profiler tests copper thickness；
3, it is dried with nitrogen after pure water cleaning；
4, Cu-BTA forms a film: by treated copper sheet 25 in 3% hydrogen peroxide+0.5%BTA+20ppm sulfuric acid solution
DEG C impregnate 10min；
5, the removal of BTA: the copper sheet (25 DEG C of immersion 1min) of long BTA film is impregnated with different cleaning solutions respectively, using wheel
Wide instrument measures thickness to characterize the removal effect of BTA.
Detection method 2:
1, by the copper-based chip cutting after polishing at the square piece of 3cm*3cm；
2, using 3% citric acid in 25 DEG C of processing 2min；The contact angle of deionized water is tested afterwards；
3, it is dried with nitrogen after pure water cleaning；
4, Cu-BTA forms a film: by treated copper sheet 25 in 3% hydrogen peroxide+0.5%BTA+20ppm sulfuric acid solution
DEG C impregnate 10min；Test the contact angle of deionized water；
5, the removal of BTA: the copper sheet (25 DEG C of immersion 2min) after impregnating long BTA film with cleaning solution tests deionized water
Contact angle；
BTA film has certain hydrophobicity, and subtracting the difference for the contact angle that step 2 measures by step 5 to characterize BTA is
It is no to completely remove.If difference is bigger and is positive value, illustrate that BTA residual is more.
The effect of the solution of the fresh configuration of table 7
(5) stability of solution detects
3.5 liters of cleaning solutions are injected in 1 gallon of (3.589 liters) plastic containers, remaining 0.089 liter of filling nitrogen, observation 4
It, in 7 days and placement in 1 month, the variation of following aspects:
1, the variation of solution colour；
2, the generation of bubble；
3, the variation of pH；
4, the variation of copper corrosion rate (detection method is with aforementioned)；
5, AFM detects the variation of surface roughness RMS (detection method is with aforementioned).
The effect of the solution of the fresh configuration of table 8
Table 9 placed the effect of the solution after 4 days
Table 10 placed the effect of the solution after 7 days
| Number | Solution colour, bubble | PH changing value | Cu corrosion rate (A/min) | RMS(nm) |
| Embodiment 1 | Lightpink, bubble-free | -0.1 | 3.6 | 3.1 |
| Embodiment 2 | Lightpink, bubble-free | 0 | 3.3 | 3 |
| Embodiment 3 | Lightpink, bubble-free | -0.1 | 3.4 | 3.1 |
| Embodiment 4 | Lightpink, bubble-free | 0.1 | 3 | 3.1 |
| Embodiment 5 | Lightpink, bubble-free | 0 | 2 | 3 |
| Embodiment 6 | Lightpink, bubble-free | 0 | 1.6 | 3.8 |
| Embodiment 7 | Lightpink, bubble-free | 0 | 3.6 | 3.2 |
| Embodiment 8 | Lightpink, bubble-free | 0.1 | 2.3 | 3.3 |
| Embodiment 9 | It is colourless, bubble-free | -0.1 | 3.2 | 3 |
| Embodiment 10 | It is colourless, bubble-free | -0.1 | 2.9 | 3 |
| Embodiment 11 | It is colourless, bubble-free | 0.1 | 1.9 | 3.3 |
| Embodiment 12 | It is colourless, bubble-free | 0 | 2.4 | 3.6 |
| Embodiment 13 | It is colourless, bubble-free | 0.1 | 6.4 | 4.6 |
| Embodiment 14 | It is colourless, bubble-free | 0 | 6.9 | 4.4 |
| Embodiment 15 | It is colourless, bubble-free | 0.1 | 7.4 | 4.9 |
| Embodiment 16 | It is colourless, bubble-free | -0.1 | 8.2 | 4.9 |
| Embodiment 17 | It is colourless, bubble-free | 0 | 5.4 | 5 |
| Embodiment 18 | It is colourless, bubble-free | -0.1 | 4.5 | 4.3 |
| Embodiment 19 | It is colourless, bubble-free | 0.1 | 6.6 | 4.1 |
| Embodiment 20 | It is colourless, bubble-free | 0 | 7.3 | 4.9 |
| Comparative example 1 | Lightpink has several bubbles | 0.3 | 9.2 | 5.9 |
| Comparative example 2 | Lightpink has several bubbles | 0.4 | 8.9 | 5.5 |
| Comparative example 3 | Lightpink has several bubbles | 0.4 | 9.3 | 5.5 |
| Comparative example 4 | Lightpink has several bubbles | 0.4 | 8.9 | 6.4 |
| Comparative example 5 | Lightpink has several bubbles | 0.2 | 9.1 | 6.6 |
| Comparative example 6 | Lightpink has several bubbles | 0.3 | 8.6 | 6.1 |
| Comparative example 7 | Lightpink has several bubbles | 0.1 | 8.6 | 6.7 |
| Comparative example 8 | Lightpink has several bubbles | 0.2 | 9 | 6.3 |
| Comparative example 9 | Lightpink has several bubbles | 0.3 | 9.5 | 5.7 |
| Comparative example 10 | Lightpink has several bubbles | 0.3 | 9.8 | 6.9 |
| Comparative example 11 | Lightpink has several bubbles | 0.2 | 9 | 6.6 |
| Comparative example 12 | Lightpink has several bubbles | 0.3 | 9.0 | 7.6 |
| Comparative example 13 | Lightpink has several bubbles | 0.2 | 9.4 | 8.0 |
| Comparative example 14 | Lightpink has several bubbles | 0.2 | 8.0 | 6.5 |
| Comparative example 15 | Lightpink has several bubbles | 0.3 | 9.2 | 7.6 |
Table 11 placed the effect of the solution after 30 days
From above-mentioned contrast effect example 1-15 and implementation result example 1-20 it can also be seen that cleaning solution of the invention passes through addition
Specific surfactant promotes the performance of cleaning solution in all fields, is especially choline or three (2- hydroxyls in alkali
Ethyl) ammonium hydroxide when effect it is fine, bio-compatibility greatly promotes.
Inventor further studies the application effect of cleaning solution of the invention on cobalt-based, tungsten base chip after CMP, discovery
Effect is suitable with copper-based chip.Cleaning solution of the invention equally has corrosion to the cleaning after CMP on cobalt-based material, tungsten substrate chip
The advantage that property is low, cleaning effect is good, long-term stability is good, bio-compatibility is good.
Claims (10)
1. a kind of cleaning solution, which is characterized in that its raw material includes the component of following mass fraction: the highly basic of 0.01%-25%,
The hydramine of 0.01%-30%, the corrosion inhibiter of 0.01%-10%, the chelating agent of 0.01%-10%, the surface of 0.01%-5% are living
Property agent, the antioxidant of 0.001%-1%, Yi Jishui, the sum of each component mass fraction be 100%；The surfactant
For the modified chloropropyl-POSS of MPEG.
2. cleaning solution as described in claim 1, which is characterized in that
The mass fraction of the highly basic is 1%-20%, such as 5%-15%；
And/or the highly basic is one of quaternary ammonium base, quaternary phosphonium hydroxide and guanidine compound or a variety of；
The quaternary ammonium base is preferably the quaternary ammonium base for having hydroxyl substituent on tetraalkyl quaternary ammonium base and/or alkyl；
The tetraalkyl quaternary ammonium base is preferably in tetramethylammonium hydroxide, tetrapropylammonium hydroxide and tetrabutylammonium hydroxide
It is one or more；
The quaternary ammonium base for having hydroxyl substituent on the alkyl is preferably choline, (2- hydroxyethyl) trimethylammonium hydroxide and three
One of (2- ethoxy) ammonium hydroxide is a variety of；
The quaternary phosphonium hydroxide is preferably to have hydroxyl substituent quaternary phosphonium hydroxide on four Wan Ji quaternary phosphonium hydroxides and/or alkyl；
The four preferred tetrabutylammonium hydroxide phosphines of Wan Ji quaternary phosphonium hydroxide；
The preferred tetramethylguanidine of the guanidine compound.
3. cleaning solution as claimed in claim 1 or 2, which is characterized in that
The mass fraction of the hydramine is 1%-10%；Such as 5%-8%；
And/or the hydramine be one of monoethanolamine, diglycolamine, triethanolamine, isobutyl hydramine and isopropanolamine or
It is a variety of.
4. cleaning solution as claimed in any one of claims 1-3, which is characterized in that
The mass fraction of the corrosion inhibiter is 0.1%-1%；Such as 0.5%-0.8%；
And/or the corrosion inhibiter is 2-mercaptobenzothiazole, 3- mercaptobenzothiazoler, 4- mercaptobenzothiazoler, 5- sulfydryl benzene
And one of thiazole, catechol, pyrogallol and 5- Aminotetrazole or a variety of.
5. such as cleaning solution of any of claims 1-4, which is characterized in that
The mass fraction of the chelating agent is 0.1%-1%；Such as 0.3%-0.9%；
And/or the chelating agent is one of malonic acid, maleic acid, arginine and EDTA or a variety of.
6. cleaning solution according to any one of claims 1 to 5, which is characterized in that
The mass fraction of the surfactant is 0.1%-1%；Such as 0.2%-0.7%；
And/or chloropropyl-the POSS that the MPEG is modified is that MPEG-400 modified chloropropyl-POSS, MPEG-500 are modified
Modified modified chloropropyl-POSS, the MPEG-1000 of chloropropyl-POSS, MPEG-750 of chloropropyl-POSS, MPEG-600 change
Property one of the modified chloropropyl-POSS of chloropropyl-POSS and MPEG-2000 or a variety of.
7. cleaning solution as claimed in any one of claims 1 to 6, which is characterized in that
The mass fraction of the antioxidant is 0.002%-0.1%；Such as 0.005%-0.01%；
And/or the antioxidant is the mixture of antioxidase and/or reducing agent.
8. cleaning solution as claimed in claim 7, which is characterized in that
The antioxidase is superoxide dismutase, glutathione peroxidase, thioredoxin peroxidase, succinic acid
Dehydrogenase, nitrate reductase, sulfite reductase, nitrite reductase and N5,N10One of methylene blue-light treatment
Or it is a variety of；The superoxide dismutase can be Cu-Zn-SOD, Mn-SOD and iron content
One of superoxide dismutase is a variety of.
And/or the reducing agent is one of ascorbic acid, gallic acid and catechin or a variety of.
9. a kind of preparation method of such as described in any item cleaning solutions of claim 1-8, which is characterized in that it includes following step
It is rapid: the raw material is mixed；Solid component in the raw material components is preferably added to liquid by the mixing
In body component, stir evenly；The mixed temperature is preferably room temperature.
10. a kind of if the described in any item cleaning solutions of claim 1-8 are in the semiconductor devices after cleaning chemically mechanical polishing
Application；Wherein one of the described preferably copper-based chip of semiconductor devices, cobalt-based chip and tungsten base chip or a variety of；It is described
Application preferably include the following steps: the semiconductor devices after chemically mechanical polishing is contacted with cleaning solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910332448.6A CN109988676A (en) | 2019-04-24 | 2019-04-24 | A kind of cleaning solution, preparation method and application |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910332448.6A CN109988676A (en) | 2019-04-24 | 2019-04-24 | A kind of cleaning solution, preparation method and application |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109988676A true CN109988676A (en) | 2019-07-09 |
Family
ID=67135134
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910332448.6A Pending CN109988676A (en) | 2019-04-24 | 2019-04-24 | A kind of cleaning solution, preparation method and application |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109988676A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110669591A (en) * | 2019-09-30 | 2020-01-10 | 上海新阳半导体材料股份有限公司 | non-TMAH alkali cleaning solution used after chemical mechanical polishing and preparation method thereof |
| CN113201742A (en) * | 2021-04-27 | 2021-08-03 | 上海新阳半导体材料股份有限公司 | Application of post-chemical mechanical polishing cleaning solution |
| CN113201409A (en) * | 2021-05-08 | 2021-08-03 | 苏州凯瑞纳米科技有限公司 | Cleaning composition of motor PCB soldering flux, preparation method, use method and application thereof |
| CN113249175A (en) * | 2021-04-27 | 2021-08-13 | 上海新阳半导体材料股份有限公司 | Application of post-chemical mechanical polishing cleaning solution |
| CN113430065A (en) * | 2020-03-23 | 2021-09-24 | 上海新阳半导体材料股份有限公司 | Anti-reflection coating cleaning and post-etching residue removing composition, preparation method and application |
| CN114774004A (en) * | 2022-04-07 | 2022-07-22 | 湖州飞鹿新能源科技有限公司 | Silicon wafer polishing additive, polishing solution, and preparation method and application thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004060330A2 (en) * | 2002-12-19 | 2004-07-22 | Kimberly-Clark Worldwide, Inc. | Multifunctional compositions for surface applications |
| CN1906287A (en) * | 2004-02-12 | 2007-01-31 | 液体空气乔治洛德方法利用和研究的具有监督和管理委员会的有限公司 | Improved alkaline chemistry for post-CMP cleaning |
| CN101233221A (en) * | 2005-05-26 | 2008-07-30 | 高级技术材料公司 | Copper passivating post-chemical mechanical polishing cleaning composition and method of use |
| CN101648123A (en) * | 2009-09-04 | 2010-02-17 | 合肥工业大学 | Nonionic aqueous POSS-based polymer surfactant |
| CN105143517A (en) * | 2013-04-22 | 2015-12-09 | 高级技术材料公司 | Copper cleaning and protection formulations |
| CN105717756A (en) * | 2014-12-23 | 2016-06-29 | 气体产品与化学公司 | Semi-aqueous photoresist or semiconductor manufacturing residue stripping and cleaning composition with improved silicon passivation |
-
2019
- 2019-04-24 CN CN201910332448.6A patent/CN109988676A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004060330A2 (en) * | 2002-12-19 | 2004-07-22 | Kimberly-Clark Worldwide, Inc. | Multifunctional compositions for surface applications |
| CN1906287A (en) * | 2004-02-12 | 2007-01-31 | 液体空气乔治洛德方法利用和研究的具有监督和管理委员会的有限公司 | Improved alkaline chemistry for post-CMP cleaning |
| CN101233221A (en) * | 2005-05-26 | 2008-07-30 | 高级技术材料公司 | Copper passivating post-chemical mechanical polishing cleaning composition and method of use |
| CN101648123A (en) * | 2009-09-04 | 2010-02-17 | 合肥工业大学 | Nonionic aqueous POSS-based polymer surfactant |
| CN105143517A (en) * | 2013-04-22 | 2015-12-09 | 高级技术材料公司 | Copper cleaning and protection formulations |
| CN105717756A (en) * | 2014-12-23 | 2016-06-29 | 气体产品与化学公司 | Semi-aqueous photoresist or semiconductor manufacturing residue stripping and cleaning composition with improved silicon passivation |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110669591A (en) * | 2019-09-30 | 2020-01-10 | 上海新阳半导体材料股份有限公司 | non-TMAH alkali cleaning solution used after chemical mechanical polishing and preparation method thereof |
| CN113430065A (en) * | 2020-03-23 | 2021-09-24 | 上海新阳半导体材料股份有限公司 | Anti-reflection coating cleaning and post-etching residue removing composition, preparation method and application |
| CN113430065B (en) * | 2020-03-23 | 2024-06-07 | 上海新阳半导体材料股份有限公司 | Composition for removing residues after cleaning and etching of anti-reflection coating, preparation method and application |
| CN113201742A (en) * | 2021-04-27 | 2021-08-03 | 上海新阳半导体材料股份有限公司 | Application of post-chemical mechanical polishing cleaning solution |
| CN113249175A (en) * | 2021-04-27 | 2021-08-13 | 上海新阳半导体材料股份有限公司 | Application of post-chemical mechanical polishing cleaning solution |
| CN113249175B (en) * | 2021-04-27 | 2023-03-24 | 上海新阳半导体材料股份有限公司 | Application of post-chemical mechanical polishing cleaning solution |
| CN113201409A (en) * | 2021-05-08 | 2021-08-03 | 苏州凯瑞纳米科技有限公司 | Cleaning composition of motor PCB soldering flux, preparation method, use method and application thereof |
| CN114774004A (en) * | 2022-04-07 | 2022-07-22 | 湖州飞鹿新能源科技有限公司 | Silicon wafer polishing additive, polishing solution, and preparation method and application thereof |
| CN114774004B (en) * | 2022-04-07 | 2023-10-10 | 湖州飞鹿新能源科技有限公司 | Silicon wafer polishing additive, polishing solution and preparation method and application thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110004449A (en) | Cleaning solution, preparation method and application after stable type chemically mechanical polishing | |
| CN109988676A (en) | A kind of cleaning solution, preparation method and application | |
| CN110669591A (en) | non-TMAH alkali cleaning solution used after chemical mechanical polishing and preparation method thereof | |
| CN109988675A (en) | Cleaning solution, preparation method and application after long-acting type chemically mechanical polishing | |
| CN113186539B (en) | Post-chemical mechanical polishing cleaning solution and preparation method thereof | |
| EP2244283A1 (en) | Cleaning composition and method for cleaning substrate for electronic device | |
| EP2812422B1 (en) | A post chemical-mechanical-polishing (post-cmp) cleaning composition comprising a specific sulfur-containing compound and a sugar alcohol | |
| JP2010093126A (en) | Alkaline aqueous solution composition for substrate processing | |
| US10507563B2 (en) | Treatment composition for chemical mechanical polishing, chemical mechanical polishing method, and cleaning method | |
| CN113201742B (en) | Application of post-chemical mechanical polishing cleaning solution | |
| CN111020610A (en) | A kind of cleaning solution and preparation method for corrosion inhibitor after Cu interconnection CMP | |
| CN113186036B (en) | Application of post-chemical mechanical polishing cleaning solution | |
| CN103865401A (en) | Application of chemo-mechanical polishing liquid | |
| CN101457123B (en) | Chemical-mechanical polishing liquid for copper process | |
| CN113249175B (en) | Application of post-chemical mechanical polishing cleaning solution | |
| CN113151838B (en) | Post-chemical mechanical polishing cleaning solution | |
| CN113215584B (en) | Preparation method of cleaning solution after chemical mechanical polishing | |
| CN113186541B (en) | Application of post-chemical mechanical polishing cleaning solution | |
| CN116814341A (en) | Preparation method of alkaline cleaning liquid | |
| CN113186543B (en) | Post-chemical mechanical polishing cleaning solution and preparation method thereof | |
| CN114106704A (en) | A green and environmentally friendly titanium metal polishing liquid | |
| CN113151837B (en) | Preparation method of cleaning solution after chemical mechanical polishing | |
| CN113774390B (en) | Cleaning liquid for chemical mechanical polishing and preparation method thereof | |
| CN113789519B (en) | Application of cleaning liquid after chemical mechanical polishing | |
| CN113774392B (en) | Cleaning liquid for chemical mechanical polishing and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190709 |