CN109920811A - Imaging sensor and forming method thereof - Google Patents
Imaging sensor and forming method thereof Download PDFInfo
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- CN109920811A CN109920811A CN201910232490.0A CN201910232490A CN109920811A CN 109920811 A CN109920811 A CN 109920811A CN 201910232490 A CN201910232490 A CN 201910232490A CN 109920811 A CN109920811 A CN 109920811A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 239000004065 semiconductor Substances 0.000 claims abstract description 64
- 238000002955 isolation Methods 0.000 claims description 47
- 230000005540 biological transmission Effects 0.000 claims description 21
- 150000002500 ions Chemical class 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 230000005622 photoelectricity Effects 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 229920005591 polysilicon Polymers 0.000 claims description 7
- 238000005468 ion implantation Methods 0.000 claims description 5
- 230000006698 induction Effects 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 238000004581 coalescence Methods 0.000 description 4
- 239000011800 void material Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000005516 deep trap Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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- Solid State Image Pick-Up Elements (AREA)
Abstract
A kind of imaging sensor and forming method thereof, described image sensor includes: semiconductor substrate, and the semiconductor substrate has photoelectric area sensor；Photodiode, in the photoelectric area sensor of the semiconductor substrate；Grid is controlled, positioned at the surface of the semiconductor substrate, and surrounds the photoelectric area sensor.The present invention program can reduce process complexity, reduce cost.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors more particularly to a kind of imaging sensor and forming method thereof.
Background technique
Imaging sensor is the core component of picture pick-up device, realizes image taking function by converting optical signals into electric signal
Energy.By taking cmos image sensor (CMOS Image Sensors, CIS) device as an example, due to its tool
There is the advantages of low-power consumption and high s/n ratio, therefore is widely applied in various fields.
Specifically, it is formed with photodiode in semiconductor substrate, can be produced in the case where being excited by extraneous light intensity
Raw photo-generated carrier, for example, electronics.Crosstalk occurs for the electrical signal between different photodiodes in order to prevent, can be in phase
Area of isolation is set between adjacent photodiode, to realize the electric isolation of adjacent pixel.
In the prior art, deep trench isolation (Deep Trench Isolation, DTI) structure is generallyd use to photoelectricity two
Electrical cross talk between pole pipe is completely cut off.Specifically, deep trench is first formed using etching technics, then uses depositing operation to institute
Filled media layer in deep trench is stated, to form DTI structure.
However, being easy to cause the increase of production cost using DTI structure, and with the diminution of critical size, propose more
High process complexity demand.
Summary of the invention
The technical problem to be solved by the present invention is to provide a kind of imaging sensors and forming method thereof, can reduce complex process
Degree, reduces cost.
In order to solve the above technical problems, the embodiment of the present invention provides a kind of imaging sensor, comprising: semiconductor substrate, institute
Semiconductor substrate is stated with photoelectric area sensor；Photodiode, in the photoelectric area sensor of the semiconductor substrate；Control gate
Pole positioned at the surface of the semiconductor substrate, and surrounds the photoelectric area sensor.
Optionally, described image sensor further include: photodiode area of isolation is located in the semiconductor substrate,
And surround the photodiode；Wherein, the control grid covers at least part of the photodiode area of isolation.
Optionally, the type of the Doped ions of the photodiode area of isolation is p-type.
Optionally, described image sensor further include: transmission grid, positioned at the surface of the semiconductor substrate, and with institute
Stating between control grid has interval.
Optionally, the control grid is selected from: polysilicon gate, high-k grid and metal gates.
In order to solve the above technical problems, the embodiment of the present invention provides a kind of forming method of imaging sensor, comprising: provide
Semiconductor substrate, the semiconductor substrate have photoelectric area sensor；Light is formed in the photoelectric area sensor of the semiconductor substrate
Electric diode；Control grid is formed on the surface of the semiconductor substrate, and the control grid surrounds the photoelectric area sensor.
Optionally, it is formed before photodiode in the photoelectric area sensor of the semiconductor substrate, the image passes
The forming method of sensor further include: use ion implantation technology, form photodiode isolated area in the semiconductor substrate
Domain, and the photodiode area of isolation surrounds the photodiode；Wherein, the control grid covers the photoelectricity two
At least part of pole pipe area of isolation.
Optionally, the type of the Doped ions of the photodiode area of isolation is p-type.
Optionally, the forming method of the imaging sensor further include: formed and passed on the surface of the semiconductor substrate
Defeated grid, and there is interval between the transmission grid and the control grid.
Optionally, the control grid is selected from: polysilicon gate, high-k grid and metal gates.
Compared with prior art, the technical solution of the embodiment of the present invention has the advantages that
In embodiments of the present invention, grid is controlled by setting, has an opportunity to apply negative voltage in specific application, to attract
More void coalescences are in the lower section of control grid, so that the concentration in hole below control grid is helped to improve, to photoelectricity two
Pole pipe is preferably isolated, compared with the prior art in DTI structure need using etching, deposition etc. multi-step process formed,
Process complexity is higher and cost is larger, using the scheme in the embodiment of the present invention, attracts more holes using control grid
Photodiode is isolated, helps to reduce process complexity, reduces cost.
Further, described image sensor further includes photodiode area of isolation, by photodiode isolated area
Doped p-type ion in domain can make hole and photodiode area of isolation below control gate pole cooperate, form concentration more
High cavitation area, so that the electric isolation to adjacent photodiode be better achieved.
Further, described image sensor further includes transmission grid, is had between the transmission grid and the control grid
There is interval, can have an opportunity to form the transmission grid and the control grid using same mask plate, to reduce production
Cost.
Detailed description of the invention
Fig. 1 is a kind of the schematic diagram of the section structure of imaging sensor in the prior art；
Fig. 2 is a kind of flow chart of the forming method of imaging sensor in the embodiment of the present invention；
Fig. 3 to Fig. 5 is the corresponding device of part steps in a kind of forming method of imaging sensor in the embodiment of the present invention
The schematic diagram of the section structure；
Fig. 6 is a kind of top view of imaging sensor shown in Fig. 5；
Fig. 7 is a kind of device of the imaging sensor on the control gate under power mode, shown in Fig. 6 along cutting line A1-A2
The schematic diagram of the section structure.
Specific embodiment
In the image sensor, it after lens arrangement captures incident light, is filtered by filter, removes irrelevant light, shape
Monochromatizing light, incident photon reach the pixel device that semiconductor substrate is included photodiode and absorb, and generate photoproduction current-carrying
Son.Crosstalk occurs for the electrical signal between different photodiodes in order to prevent, can set between adjacent photodiode
Area of isolation is set, to realize the electric isolation of adjacent pixel.
Referring to Fig.1, Fig. 1 is a kind of the schematic diagram of the section structure of imaging sensor in the prior art.
Specifically, described image sensor may include semiconductor substrate 100, photodiode 102, DTI structure 110,
Transmit grid 120 and floating diffusion region 130.
Wherein, the DTI structure 110 is for being isolated photodiode 102, so that photo-generated carrier e is only from two pole of photoelectricity
Pipe 102 is moved to floating diffusion region 130, without being moved in adjacent photodiode 102 from photodiode 102, from
And avoid electrical cross talk.
The present inventor has found after study, in the prior art, generallys use DTI structure to photodiode
Electrical cross talk between 102 is completely cut off.Specifically, deep trench is first formed using etching technics, then uses depositing operation to institute
Filled media layer in deep trench is stated, to form DTI structure.
It should be pointed out that when using back-illuminated type (Back-side Illumination, BSI) CIS, the DTI knot
Structure can also be formed from the back side of logic wafer (Logic Wafer).Specifically, first inside semiconductor substrate and the shape of surface
At logical device, pixel device and metal interconnection structure, then using the front key of carrying wafer and the semiconductor substrate
It closes, and then the back of semiconductor substrate is carried out thinned, and then form the DTI structure at the back side of semiconductor substrate, and
Form the subsequent technique of CIS.
The present inventor has found after further research, using DTI structure, is easy to cause the increase of production cost,
The dark current of control CIS is caused to adversely affect, and with the diminution of critical size, proposes that higher process complexity needs
It asks.
It is understandable to enable above-mentioned purpose of the invention, feature and beneficial effect to become apparent, with reference to the accompanying drawing to this
The specific embodiment of invention is described in detail.
Referring to Fig. 2, Fig. 2 is a kind of flow chart of the forming method of imaging sensor in the embodiment of the present invention.Described image
The forming method of sensor may include step S21 to step S23:
Step S21: providing semiconductor substrate, and the semiconductor substrate has photoelectric area sensor；
Step S22: photodiode is formed in the photoelectric area sensor of the semiconductor substrate；
Step S23: control grid is formed on the surface of the semiconductor substrate, and the control grid surrounds the photoelectricity
Induction zone.
Above-mentioned each step is illustrated below with reference to Fig. 3 to Fig. 5.
Fig. 3 to Fig. 5 is the corresponding device of part steps in a kind of forming method of imaging sensor in the embodiment of the present invention
The schematic diagram of the section structure.
Referring to Fig. 3, semiconductor substrate 200 is provided, there is photoelectric area sensor in the semiconductor substrate 200, described half
Photodiode 202 is formed in the photoelectric area sensor of conductor substrate 200, is exposure mask with patterned mask layer 261, using ion
Injection technology forms photodiode area of isolation 210 in the semiconductor substrate 200, and the photodiode is isolated
Region 210 surrounds the photodiode 202.
In specific implementation, the semiconductor substrate 200 can be silicon substrate or the material of the semiconductor substrate 200
Material can also be the materials appropriate applied to imaging sensor such as germanium, SiGe, silicon carbide, GaAs or gallium indium, described
Semiconductor substrate 200 can also have outside for the silicon substrate of insulator surface or the germanium substrate of insulator surface, or growth
Prolong the substrate of layer (Epitaxy layer, Epi layer).Preferably, the semiconductor substrate 200 can be half be lightly doped
Conductor substrate, and doping type is opposite with drain region.Specifically, can by the semiconductor substrate 200 carry out ion implanting,
Realize deep trap doping (Deep Well Implant).
The photodiode 202 can generate photo-generated carrier, for example, in the case where being excited by extraneous light intensity
Electronics.The photodiode 202 can be formed by ion implantation technology, moreover, by control ion implanting energy and
Concentration can control the depth and injection range of ion implanting, to control the depth and thickness of photodiode 202.
It should be pointed out that in specific implementation, prior art can also be used, be initially formed in semiconductor substrate 200
Shallow-trench isolation (Shallow Trench Isolation, STI), the embodiment of the present invention does not repeat them here this.
In a kind of specific embodiment of the embodiment of the present invention, the photodiode area of isolation 210 can be used
DTI structure.Specifically, deep trench first can be formed using etching technics, then filled out using depositing operation into the deep trench
Filling medium layer, to form DTI structure.
In another specific embodiment of the embodiment of the present invention, the photodiode area of isolation 210 can be with
It is formed using ion implantation technology.
Specifically, the type of the Doped ions of the photodiode area of isolation 210 can be p-type.
It in embodiments of the present invention, is p-type by the type for the Doped ions that photodiode area of isolation 210 is arranged,
Hole can be formed in the photodiode area of isolation 210, to carry out electric isolation to photo-generated carrier.
In embodiments of the present invention, described image sensor further includes photodiode area of isolation, by photoelectricity two
Doped p-type ion in pole pipe area of isolation can make hole and photodiode area of isolation below control gate pole cooperate,
The higher cavitation area of concentration is formed, so that the electric isolation to adjacent photodiode be better achieved.
In specific implementation, the photodiode area of isolation is formed only with dielectric layer or using ion implantation technology
210, isolation effect is still insufficient, is still easy to happen electrical leakage problems between adjacent photodiode 202, leads to electrical cross talk
It generates.
Referring to Fig. 4, control grid 222 and transmission grid 220, and institute are formed on the surface of the semiconductor substrate 200
Control grid 222 is stated around the photoelectric area sensor, and covers at least part of the photodiode area of isolation 210.
Wherein, there is interval between the transmission grid 220 and the control grid 222.
Further, the transmission grid 220 can be with the control grid 222 and is respectively formed using multiple mask plates
, it can also be and use same mask plate formation, such as when etching transmits grid 220, retain the control grid
222。
Preferably, the transmission grid 220 and the control grid 222, which can be, uses same mask plate formation,
The transmission grid 220 and the control grid 222 obtained after then etching can have identical height.
In specific implementation, described image sensor further includes transmission grid 220, the transmission grid 220 and the control
There is interval between grid 222 processed, can have an opportunity to form the transmission grid 220 and the control using same mask plate
Grid 222, to reduce production cost.
Further, the control grid 222 can be selected from: polysilicon gate (Poly Gate), high-k grid
(High-K Gate) and metal gates (Metal Gate).
Preferably, can using polysilicon gate as the control grid 222, with obtain higher technology stability with
A possibility that reducing metallic pollution.
Referring to Fig. 5, floating diffusion region (Floating Diffusion, FD) is formed between adjacent transmission grid 220
230。
In embodiments of the present invention, through setting floating diffusion region 230 between the adjacent transmission grid 220,
Floating diffusion region 230 can be enable to receive the photo-generated carrier that more transmission of photodiode 202 come, to help to reduce
The area of imaging sensor reduces production cost.
Referring to Fig. 6, Fig. 6 is a kind of top view of imaging sensor shown in Fig. 5.Described image sensor includes semiconductor
Substrate, the semiconductor substrate have photoelectric area sensor, and photodiode 202 is located in the photoelectric area sensor.
Wherein, described image sensor further includes control grid 222, positioned at the surface of the semiconductor substrate, covering light
At least part of electric diode area of isolation.
Wherein, described image sensor further includes transmission grid 220 and floating diffusion region 230, the transmission grid 220
Positioned at the surface of the semiconductor substrate, and there is interval between the control grid 222.
Wherein, shallow-trench isolation STI 240 is also formed in semiconductor substrate 200.
It is understood that the semiconductor substrate is hidden by the photodiode 202 in the top view shown in Fig. 6
Gear, the photodiode area of isolation are blocked by the control grid 222.
It should be pointed out that the floating diffusion region 230 is by four biographies of surrounding in the imaging sensor shown in Fig. 6
Defeated grid 220 and photodiode 202 share, and facilitate the area for reducing imaging sensor, reduce production cost.
Referring to Fig. 7, Fig. 7 is on the control gate under power mode, and a kind of imaging sensor shown in Fig. 6 is along cutting line A1-
The device profile structural schematic diagram of A2.
Specifically, the control grid 222 is for applying negative voltage when powering on.
In embodiments of the present invention, grid 222 is controlled by setting, and applies negative voltage on the control grid 222,
More void coalescences can be attracted in the lower section of control grid 222, to form void coalescence region 212.
Wherein, the hole can derive from the photodiode area of isolation 210, for example, use ion implanting work
The P-type ion of skill injection can also derive from other regions of the semiconductor substrate 200.
In embodiments of the present invention, grid 222 is controlled by setting, has an opportunity to apply negative voltage in specific application, with
Attract more void coalescences in the lower section of control grid 222, to help to improve the dense of control 222 lower section hole of grid
Degree, photodiode 202 is preferably isolated, compared with the prior art in DTI structure need using etching, deposition etc.
Multi-step process is formed, and process complexity is higher and cost is larger, using the scheme in the embodiment of the present invention, using control grid
222 attract more holes that photodiode 202 is isolated, and help to reduce process complexity, reduce cost.
In embodiments of the present invention, the photodiode area of isolation 210 is formed by way of ion implanting, such as
The doped p-type ion in the photodiode area of isolation 210 can make hole and the photoelectricity of 222 lower section of control gate pole
Diode-isolated region 210 cooperates, and the higher cavitation area of concentration is formed, to be better achieved to adjacent photodiode
202 electric isolation.
It may include: semiconductor substrate 200, institute that the embodiment of the invention also discloses a kind of imaging sensors referring to Fig. 7
Semiconductor substrate 200 is stated with photoelectric area sensor；Photodiode 202, positioned at the photoelectric area sensor of the semiconductor substrate 200
It is interior；Grid 222 is controlled, positioned at the surface of the semiconductor substrate 200, and surrounds the photoelectric area sensor.
Further, the imaging sensor can also include: photodiode area of isolation 210, be located at described half
In conductor substrate 200, and surround the photodiode 202；Wherein, the control grid 222 covers the photodiode
At least part of area of isolation 210.
Further, the type of the Doped ions of the photodiode area of isolation 210 can be p-type.
Further, it is described transmission grid 220 can be located at the semiconductor substrate 200 surface, and with the control
There is interval between grid 222.
Further, the control grid 222 can be selected from: polysilicon gate, high-k grid and metal gates.
The pass above and shown in Fig. 2 to Fig. 7 is please referred to about the principle of the imaging sensor, specific implementation and beneficial effect
In the associated description of the forming method of imaging sensor, details are not described herein again.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (10)
1. a kind of imaging sensor characterized by comprising
Semiconductor substrate, the semiconductor substrate have photoelectric area sensor；
Photodiode, in the photoelectric area sensor of the semiconductor substrate；
Grid is controlled, positioned at the surface of the semiconductor substrate, and surrounds the photoelectric area sensor.
2. imaging sensor according to claim 1, which is characterized in that further include:
Photodiode area of isolation is located in the semiconductor substrate, and surrounds the photodiode；
Wherein, the control grid covers at least part of the photodiode area of isolation.
3. imaging sensor according to claim 2, which is characterized in that the doping of the photodiode area of isolation from
The type of son is p-type.
4. imaging sensor according to claim 1, which is characterized in that further include:
Grid is transmitted, positioned at the surface of the semiconductor substrate, and there is interval between the control grid.
5. imaging sensor according to claim 1, which is characterized in that the control grid is selected from: polysilicon gate, height
K value grid and metal gates.
6. a kind of forming method of imaging sensor characterized by comprising
Semiconductor substrate is provided, the semiconductor substrate has photoelectric area sensor；
Photodiode is formed in the photoelectric area sensor of the semiconductor substrate；
Control grid is formed on the surface of the semiconductor substrate, and the control grid surrounds the photoelectric area sensor.
7. the forming method of imaging sensor according to claim 6, which is characterized in that in the light of the semiconductor substrate
It is formed before photodiode in electric induction area, further includes:
Using ion implantation technology, photodiode area of isolation, and two pole of the photoelectricity are formed in the semiconductor substrate
Pipe area of isolation surrounds the photodiode；
Wherein, the control grid covers at least part of the photodiode area of isolation.
8. the forming method of imaging sensor according to claim 7, which is characterized in that the photodiode isolated area
The type of the Doped ions in domain is p-type.
9. the forming method of imaging sensor according to claim 6, which is characterized in that further include:
Transmission grid is formed on the surface of the semiconductor substrate, and between having between the transmission grid and the control grid
Every.
10. the forming method of imaging sensor according to claim 6, which is characterized in that the control grid is selected from: more
Polysilicon gate, high-k grid and metal gates.
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| CN206742242U (en) * | 2016-05-13 | 2017-12-12 | 半导体元件工业有限责任公司 | Imaging sensor and imaging pixel |
| CN107564926A (en) * | 2017-09-11 | 2018-01-09 | 德淮半导体有限公司 | Cmos image sensor and forming method thereof |
| CN107658321A (en) * | 2016-07-25 | 2018-02-02 | 南京大学 | Double device photodetector unit, detector and its methods based on composite dielectric gate |
| CN109166872A (en) * | 2018-08-31 | 2019-01-08 | 上海华力微电子有限公司 | A kind of forming method of cmos image sensor |
| CN109285851A (en) * | 2018-08-22 | 2019-01-29 | 西安飞芯电子科技有限公司 | A pixel unit and its preparation method |
-
2019
- 2019-03-26 CN CN201910232490.0A patent/CN109920811A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN206742242U (en) * | 2016-05-13 | 2017-12-12 | 半导体元件工业有限责任公司 | Imaging sensor and imaging pixel |
| CN107658321A (en) * | 2016-07-25 | 2018-02-02 | 南京大学 | Double device photodetector unit, detector and its methods based on composite dielectric gate |
| CN107564926A (en) * | 2017-09-11 | 2018-01-09 | 德淮半导体有限公司 | Cmos image sensor and forming method thereof |
| CN109285851A (en) * | 2018-08-22 | 2019-01-29 | 西安飞芯电子科技有限公司 | A pixel unit and its preparation method |
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Application publication date: 20190621 |