CN108598152B - Super junction device terminal structure - Google Patents
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- CN108598152B CN108598152B CN201810527223.1A CN201810527223A CN108598152B CN 108598152 B CN108598152 B CN 108598152B CN 201810527223 A CN201810527223 A CN 201810527223A CN 108598152 B CN108598152 B CN 108598152B
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- 239000000463 material Substances 0.000 claims description 3
- 238000011084 recovery Methods 0.000 abstract description 12
- 239000000969 carrier Substances 0.000 description 14
- 210000004027 cell Anatomy 0.000 description 9
- 230000005684 electric field Effects 0.000 description 8
- 239000003989 dielectric material Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
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- 230000008569 process Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 2
- 210000003850 cellular structure Anatomy 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
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- H—ELECTRICITY
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- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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Abstract
The invention provides a super junction device terminal structure, which is sequentially provided with a terminal area and a transition area from the edge of a device to the direction of an active area of the device, wherein the terminal area and the transition area share a first conductive type semiconductor substrate and a first conductive type epitaxial layer; the terminal area includes: a terminal region second conductivity type column region, a cut-off ring; the transition region comprises a second conductive type column region of the transition region and a second conductive type body region, an insulating medium region is arranged below the second conductive type column region of the transition region, the upper surface of the insulating medium region is in contact with the second conductive type column region of the transition region, and the depth of the lower surface of the insulating medium region is the same as that of the second conductive type column region of the terminal region; the invention reduces the reverse recovery charge without influencing the voltage resistance of the super junction device, improves the current concentration phenomenon of the main junction edge of the terminal transition region in the reverse recovery process, reduces the switching loss of the device, and improves the switching speed of the super junction device and the reliability of the terminal.
Description
Technical Field
The invention belongs to the technical field of power semiconductors, and particularly relates to a super junction device terminal structure.
Background
The super junction device is a very important power device in the medium-high voltage field, the basic structure of the super junction device consists of p columns and n columns which are alternately arranged, the basic principle of charge balance is followed, and the structure breaks through silicon limit, so that the super junction device is a significant milestone in the development history of power devices. The super-junction MOSFET has the advantages that the super-junction structure is introduced into the drift region of the traditional power MOSFET, so that the compromise relationship between the breakdown voltage and the on-resistance of the power MOSFET is greatly improved, and the super-junction MOSFET is widely applied to a power system. Under the blocking state of the device, the p column and the n column in the super junction structure are completely depleted, and under the modulation of the transverse electric field of the drift region, the longitudinal electric field of the device tends to be uniformly distributed, so that the withstand voltage of the super junction device only depends on the thickness of the drift region theoretically and is irrelevant to the doping concentration of the drift region, so that the doping concentration of the drift region can be properly improved, and the on-resistance of the device is effectively reduced.
In addition, one issue to be considered important in power device design is the design of the termination structure. A reasonable terminal structure can effectively improve the voltage resistance of the device, reduce the leakage current of the device and enhance the reliability of the device. In the conventional junction termination technology, a field limiting ring and a field plate structure are often adopted to reduce the surface electric field at a main junction so as to improve the breakdown voltage of the device. In view of the special cellular structure and manufacturing process of the super junction structure and the characteristics of small thickness and high doping concentration of the drift region, the terminal structure of the common high-voltage power device is no longer suitable for the super junction structure. The structure of the super junction device which is widely applied at present is shown in fig. 1 and comprises a cell area I, a transition area II and a terminal voltage-resistant area III, wherein the transition area II is positioned between the cell area I and the terminal voltage-resistant area III. The super-junction terminal structure and the super-junction cellular structure are the same, p columns and n columns are alternately arranged, and the basic principle of charge balance is also followed.
The switching process of a diode from an on-state to a reverse-blocking state is referred to as reverse recovery of the diode. In a switch application, particularly in a bridge circuit, the body diode in the MOSFET is required to be conducted in a forward direction to provide reverse drain current for circuit follow current, and in the process of reverse turn-off of the MOSFET, excess carriers are extracted, and the body diode gradually starts to bear high voltage. Compared with the traditional MOSFET, the super junction structure has the advantages that the super junction structure is charge balance obtained by alternately arranging a plurality of p columns and n columns, and the pn junction area of a body diode formed by the p columns and the n columns is much larger, so that the body diode can generate more reverse recovery charges Qrr and larger reverse recovery peak current Irrm in a freewheeling stage. In addition, due to the rapid depletion of the super junction p column and the n column, a large voltage change rate dv/dt is generated, which may cause the parasitic triode of the device to turn on and cause the device to burn out. Therefore, the reliability of the body diode reverse recovery process of the super junction device is very critical in application.
Because the transition region p column of the conventional super junction device terminal and the source electrode of the cell region are connected with the same potential, when the body diode of the device continues current, the body diodes of the cell region and the transition region are both conducted in the forward direction, and a large number of excess carriers are generated. In the freewheeling stage, a large number of excess carriers are diffused to the terminal voltage-withstanding region. When the device is turned off reversely, because the p column potential of the terminal voltage-withstanding region floats empty and the excess carriers can only be extracted through the transition region, a large number of carriers are still not extracted in the terminal voltage-withstanding region when the extraction of the excess carriers in the cell region is finished, and the phenomenon of current concentration easily occurs at the edge of the main junction of the transition region, so that dynamic avalanche causes the failure of the device in the region.
Disclosure of Invention
In order to overcome the problems, the invention provides a super junction device terminal structure.
In order to achieve the purpose, the invention adopts the following technical scheme:
a terminal structure of a super junction device is provided with a terminal area I and a transition area II in sequence from the edge of the device to the active area of the device, wherein the terminal area I and the transition area II share a first conductive type semiconductor substrate and a first conductive type epitaxial layer positioned above the first conductive type semiconductor substrate;
the terminal area I includes: one or more mutually independent terminal region second conductive type column regions are positioned in the first conductive type epitaxial layer, and the upper surfaces of the terminal region second conductive type column regions are flush with the upper surface of the first conductive type epitaxial layer; the cut-off ring is positioned at one end, far away from the active region, of the upper layer of the first conduction type epitaxial layer;
the transition zone II comprises: one or more mutually independent transition region second conductive type column regions positioned in the first conductive type epitaxial layer; the lower surface of the second conductive type body region is connected with the upper surface of the second conductive type column region of the transition region and is connected with the same potential with the source electrode of the unit cell; an insulating medium area is arranged below the second conductive type column area of the transition area, the upper surface of the insulating medium area is in contact with the second conductive type column area of the transition area, and the depth of the lower surface of the insulating medium area is the same as that of the second conductive type column area of the terminal area.
Preferably, the longitudinal length of the second conductivity type column region in the transition region is less than or equal to the longitudinal length of the insulating medium region.
Preferably, the insulating dielectric region in the transition region ii and the second conductivity type column region in the termination region extend to the bottom of the first conductivity type epitaxial layer and contact the first conductivity type semiconductor substrate.
Preferably, the insulating dielectric region is formed by two or more different insulating dielectric materials.
Preferably, the first conductivity type is N-type, and the second conductivity type is P-type; or the first conductive type is P type, and the second conductive type is N type.
The invention has the beneficial effects that: by providing an insulating dielectric region under one or more p pillars of the termination transition region of a conventional superjunction device, the insulation medium region can prevent the excessive carriers in the cellular region from diffusing to the terminal voltage-withstanding region while reducing the pn junction area formed by the p column region of the transition region and the N-type epitaxial layer, thereby reducing the number of excess carriers entering a terminal voltage-withstanding region in the body diode freewheeling stage, reducing reverse recovery charges of a terminal structure, improving the current concentration phenomenon of the main junction edge of a transition region in the reverse recovery process, and the super junction terminal voltage resistance can not be obviously reduced, so the super junction device terminal structure provided by the invention has the advantages that the super junction device voltage resistance is not influenced, the reverse recovery charge is reduced, the current concentration phenomenon of the main junction edge of the terminal transition region in the reverse recovery process is improved, the switching loss of the device is reduced, and the switching speed of the super junction device and the reliability of the terminal are improved.
Drawings
Fig. 1 is a schematic diagram of a conventional super junction terminal structure;
fig. 2 is a schematic diagram of a super junction terminal structure provided in embodiment 1 of the present invention;
fig. 3 is a schematic diagram of a super junction termination structure in which a pillar region extends to the whole epitaxial layer according to embodiment 2 of the present invention;
fig. 4 is a schematic diagram of a super junction termination structure having multiple regions of insulating dielectric material according to embodiment 3 of the present invention.
The structure comprises a first conductive type semiconductor substrate 1, a first conductive type epitaxial layer 2, a terminal region second conductive type column region 31, a transition region second conductive type column region 32, a second conductive type column region 3, a second conductive type body region 4, a stop ring 5, an insulating medium region 6, a first insulating medium material region 7 and a second insulating medium material region 8.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Example 1
A terminal structure of a super junction device is provided with a terminal area I and a transition area II in sequence from the edge of the device to the direction of an active area of the device as shown in figure 2, wherein the terminal area I and the transition area II share a first conductive type semiconductor substrate 1 and a first conductive type epitaxial layer 2 positioned above the first conductive type semiconductor substrate 1;
the terminal area I includes: one or more mutually independent terminal region second conductive type column regions 31 are positioned in the first conductive type epitaxial layer 2, and the upper surfaces of the terminal region second conductive type column regions 31 are flush with the upper surface of the first conductive type epitaxial layer 2; the cut-off ring 5 is positioned at one end, far away from the active region, of the upper layer of the first conduction type epitaxial layer 2;
the transition zone II comprises: one or more mutually independent transition region second conductivity type column regions 32 located in the first conductivity type epitaxial layer 2; the second conductive type body region 4 is positioned on the upper layer of the first conductive type epitaxial layer 2, the lower surface of the second conductive type body region 4 is connected with the upper surface of the transition region second conductive type column region 32, and is connected with the source electrode of the unit cell at the same potential; an insulating medium region 6 is arranged below the transition region second conductive type column region 32, the upper surface of the insulating medium region 6 is in contact with the transition region second conductive type column region 32, and the depth of the lower surface of the insulating medium region 6 is the same as that of the terminal region second conductive type column region 31.
The longitudinal length of the transition region second conductivity type column region 32 is less than or equal to the longitudinal length of the insulating dielectric region 6.
In this embodiment, the first conductive type is N-type, and the second conductive type is P-type;
the working principle of the invention is illustrated by example 1:
when the super junction MOSFET device is applied to a switch, particularly a bridge circuit, a body diode in the device is required to be conducted in a forward direction to provide reverse drain current for circuit follow current. In the freewheeling stage, as the p-type column region in the terminal transition region of the super junction device is connected with the source electrode of the cell region at the same potential, the body diodes of the cell region and the transition region are both conducted in the forward direction. Due to the existence of the transition region insulating medium region, the pn junction area formed by the p-type column region and the N-type epitaxial layer is reduced, and the excessive carriers generated in the follow current stage are reduced; in addition, the insulating medium region can prevent the excessive carriers in the cellular region from diffusing to the terminal voltage-resistant region, so that the number of the excessive carriers entering the terminal voltage-resistant region in the follow current stage is reduced. When the diode is turned off in the reverse direction, the excess carriers need to be extracted out, so that the body diode bears reverse withstand voltage. Because the p column potential of the terminal voltage-withstanding region is floating, the excess carriers in the region can only be extracted through the transition region. The number of surplus carriers entering a terminal voltage-resistant region in a follow current stage is reduced, namely reverse recovery charges are reduced, so that the current concentration phenomenon at the edge of a P-type body region in a transition region in the reverse recovery process is improved. Because the dielectric layer can bear partial withstand voltage, the withstand voltage of the super junction structure is not obviously influenced. .
Example 2
On the basis of embodiment 1, the present embodiment provides a super junction termination structure in which the pillar region extends to the entire epitaxial layer, as shown in fig. 3. In embodiment 1, the insulating dielectric region 6 is not in contact with the first conductivity type semiconductor substrate, and a portion of the first conductivity type epitaxial layer 2 is separated from the first conductivity type semiconductor substrate, where the portion of the first conductivity type epitaxial layer 2 is equivalent to a buffer layer below the semi-superjunction device structure, and plays a role in adjusting an electric field of the epitaxial layer, and can increase doping tolerance of the P-type column region, so that the process is easier to implement. The insulating dielectric region 6 and the terminal region second conductivity type column region 31 in the transition region ii of the present embodiment extend to the bottom of the first conductivity type epitaxial layer 2 and contact with the first conductivity type semiconductor substrate 1. The rest of the structure is the same as in example 1. The depth of each p-type column region in the terminal region is the same, and the charge balance is better controlled. In practical applications, the selection can be appropriately made according to the requirements.
Example 3
On the basis of embodiment 1, the present embodiment provides a super junction termination structure having a plurality of composite insulating dielectric regions, as shown in fig. 4. In this embodiment, two or more different insulating dielectric materials, i.e., a first insulating dielectric material region 7 and a second insulating dielectric material region 8, are disposed in the transition region ii, and the rest of the structure is the same as that in embodiment 1. Because different insulating dielectric materials have different dielectric constants, an electric field peak value can be introduced at the interface of the two insulating dielectric materials, and the electric field peak value can play a role in adjusting the electric field inside the first conduction type epitaxial layer 2, so that the embodiment has the advantages of embodiment 1, and simultaneously can enable the electric field in the first conduction type epitaxial layer 2 to be more uniformly distributed and play a role in adjusting the voltage resistance of the device.
The invention can be used as the terminal structure of various super junction devices. In addition, the widths of the transition region and the P-type column region of the termination region can be adjusted according to the requirements of specific applications.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (4)
1. A super junction device terminal structure which characterized in that: the device comprises a termination region and a transition region which are sequentially arranged from the edge of the device to the active region of the device, wherein the termination region and the transition region share a first conductive type semiconductor substrate (1) and a first conductive type epitaxial layer (2) positioned above the first conductive type semiconductor substrate (1);
the terminal area includes: one or more mutually independent terminal region second conductive type column regions (31) are positioned in the first conductive type epitaxial layer (2), and the upper surfaces of the terminal region second conductive type column regions (31) are flush with the upper surface of the first conductive type epitaxial layer (2); the cut-off ring (5) is positioned at one end, far away from the active region, of the upper layer of the first conduction type epitaxial layer (2);
the transition zone includes: one or more mutually independent transition region second conductivity type column regions (32) located in the first conductivity type epitaxial layer (2); the second conductive type body region (4) is positioned on the upper layer of the first conductive type epitaxial layer (2), the lower surface of the second conductive type body region (4) is connected with the upper surface of the second conductive type column region (32) of the transition region, and the lower surface of the second conductive type body region is connected with the source electrode of the unit cell at the same potential; an insulating medium region (6) is arranged below each transition region second conductive type column region (32), the upper surface of the insulating medium region (6) is in contact with the transition region second conductive type column region (32), the depth of the lower surface of the insulating medium region (6) is the same as that of the terminal region second conductive type column region (31), and the longitudinal length of the transition region second conductive type column region (32) is smaller than or equal to that of the insulating medium region (6).
2. The superjunction device termination structure of claim 1, wherein: the insulating medium region (6) in the transition region and the second conduction type column region (31) in the terminal region extend to the bottom of the first conduction type epitaxial layer (2) and are in contact with the first conduction type semiconductor substrate (1).
3. The superjunction device termination structure of claim 1, wherein: the insulating medium area (6) is composed of more than two different insulating medium materials.
4. The super junction device termination structure of any of claims 1 to 3, wherein: the first conductive type is N type, and the second conductive type is P type; or the first conductive type is P type, and the second conductive type is N type.
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| CN102231390A (en) * | 2011-06-17 | 2011-11-02 | 浙江大学 | Vertical double-diffused metal oxide semiconductor power device with super junction structure |
| CN103050523A (en) * | 2012-12-14 | 2013-04-17 | 上海华虹Nec电子有限公司 | Insulated gate bipolar transistor and manufacturing method thereof |
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| CN102231390A (en) * | 2011-06-17 | 2011-11-02 | 浙江大学 | Vertical double-diffused metal oxide semiconductor power device with super junction structure |
| CN103050523A (en) * | 2012-12-14 | 2013-04-17 | 上海华虹Nec电子有限公司 | Insulated gate bipolar transistor and manufacturing method thereof |
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