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CN108269868A - 薄膜太阳能电池 - Google Patents

薄膜太阳能电池 Download PDF

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CN108269868A
CN108269868A CN201810083952.2A CN201810083952A CN108269868A CN 108269868 A CN108269868 A CN 108269868A CN 201810083952 A CN201810083952 A CN 201810083952A CN 108269868 A CN108269868 A CN 108269868A
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layer
thin
solar cells
film solar
light absorbing
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聂曼
杨立红
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Beijing Apollo Ding Rong Solar Technology Co Ltd
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Beijing Apollo Ding Rong Solar Technology Co Ltd
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Priority to CN201810083952.2A priority Critical patent/CN108269868A/zh
Priority to PCT/CN2018/092411 priority patent/WO2019144565A1/zh
Publication of CN108269868A publication Critical patent/CN108269868A/zh
Priority to EP18183591.9A priority patent/EP3518291A1/en
Priority to ZA2018/04730A priority patent/ZA201804730B/en
Priority to JP2018135276A priority patent/JP2019134151A/ja
Priority to KR1020180089814A priority patent/KR20190092220A/ko
Priority to US16/109,006 priority patent/US20190237607A1/en
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Abstract

本发明公开了一种薄膜太阳能电池，其包括基板，基板上依次设置有钼层、第一碱性元素层、光吸收层、第二碱性元素层、缓冲层和透明导电层。本发明提供的薄膜太阳能电池，通过设置第二碱性元素层，使第二碱性元素层中的碱金属元素与光吸收层中的元素发生反应形成含有碱金属元素的膜层，从而改变了光吸收层表面的成分，并进一步通过离子交换改变光吸收层的电子结构，减少了层间载流子的表面复合，使后制备处理工艺增大了电池开路电压，进而提高了电池的光电转换效率。

Description

薄膜太阳能电池
技术领域
本发明涉及太阳能电池技术领域，尤其涉及一种薄膜太阳能电池。
背景技术
随着工业的快速发展，严峻的能源和环境问题日趋严重，太阳能利用成为各国研究的热点。其中，在太阳能电池技术领域，铜铟镓硒(CIGS)为直接带隙半导体，随着Ga元素的掺入，CIGS的带隙宽度可以在1.02eV与1.68eV之间进行调节。CIGS对可见光吸收系数高，是最有希望用于制作高效低成本薄膜太阳能电池的材料。
CIGS电池的玻璃基板含有碱性元素，CIGS与Mo层之间有蒸镀一层碱性化合物层，作为吸收层碱性元素的阻隔调节。但是在共蒸发制备吸收层过程中，工艺温度超过500度，碱性元素由高浓度处扩散到低浓度吸收层。吸收层制备完成后，在传输到下一段工艺前，基板温度降低，碱性元素又扩散回CIGS层底部，导致CIGS表面的碱性元素不可控，进而使整个工艺过程中碱性元素不可控，降低了CIGS电池的光电转换效率。
发明内容
本发明的目的是提供一种薄膜太阳能电池，以解决上述现有技术中的问题，提升对CIGS表面的碱性元素的可控性，提高电池的光电转换效率。
本发明提供了一种薄膜太阳能电池，其中，包括：
基板；
设置在所述基板上钼层；
设置在所述钼层上的第一碱性元素层；
设置在所述碱性元素层上的光吸收层；
设置在所述光吸收层上的第二碱性元素层；
设置在所述第二碱性元素层上的缓冲层；
设置在所述缓冲层上的透明导电层。
如上所述的薄膜太阳能电池，其中，优选的是，所述基板为浮化玻璃。
如上所述的薄膜太阳能电池，其中，优选的是，所述钼层的厚度为200～500nm，所述钼层的电阻为500～1000mΩ。
如上所述的薄膜太阳能电池，其中，优选的是，所述光吸收层为铜铟镓硒吸收层，所述铜铟镓硒吸收层的厚度为1.8～2.5um。
如上所述的薄膜太阳能电池，其中，优选的是，所述铜铟镓硒吸收层组成元素的原子比例满足：0.75≤Cu/(In+Ga)≤1，0.2≤Ga/(In+Ga)≤0.5。
如上所述的薄膜太阳能电池，其中，优选的是，所述缓冲层为硫化镉层，所述硫化镉层的厚度为20～70nm。
如上所述的薄膜太阳能电池，其中，优选的是，所述透明导电层的成分为掺铝氧化锌。
如上所述的薄膜太阳能电池，其中，优选的是，所述透明导电层的厚度为800～1200nm，所述透明导电层的电阻为5～30Ω。
如上所述的薄膜太阳能电池，其中，优选的是，所述第一碱性元素层为NaF、KF、RbF或CsF中的一种。
如上所述的薄膜太阳能电池，其中，优选的是，所述第二碱性元素层为NaF、KF、RbF或CsF中的一种。
本发明提供的薄膜太阳能电池，通过设置第二碱性元素层，使第二碱性元素层中的碱金属元素与光吸收层中的元素发生反应形成含有碱金属元素的膜层，从而改变了光吸收层表面的成分，并进一步通过离子交换改变光吸收层的电子结构，减少了层间载流子的表面复合，使后制备处理工艺增大了电池开路电压，进而提高了电池的光电转换效率。
附图说明
下面结合附图对本发明的具体实施方式作进一步详细的说明。
图1为本发明实施例提供的薄膜太阳能电池的结构示意图。
附图标记说明：
100-基板 200-钼层 300-第一碱性元素层
400-光吸收层 500-第二碱性元素层 600-缓冲层
700-透明导电层
具体实施方式
下面详细描述本发明的实施例，所述实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的，仅用于解释本发明，而不能解释为对本发明的限制。
如图1所示，本发明实施例提供了一种薄膜太阳能电池，其包括基板100，其中基板100可以为浮化玻璃基板，基板100上依次设置有钼层200、第一碱性元素层300、光吸收层400、第二碱性元素层500、缓冲层600和透明导电层700。需要说明的是，薄膜太阳能电池可以为柔性的薄膜太阳能电池，也可以为刚性的薄膜太阳能电池，在本实施例中，主要针对刚性的薄膜太阳能电池进行说明。
其中，通过在光吸收层400和钼层200之间蒸镀第一碱性元素层300，可以对电池结构中碱性元素的含量进行初步调控，但是，在共蒸发制备光吸收层400过程中，工艺温度超过500℃，碱性元素由光吸收层400的高浓度区域扩散到低浓度区域。而光吸收层400制备完成后，在传输到下一段工艺前，基板100温度降低，碱性元素又扩散回光吸收层400的底部，难以保证对光吸收层400表面的碱性元素的控制精度。因此，在本实施例中，在光吸收层400和缓冲层600之间设置第二碱性元素层500，利用碱性元素扩散性强的特性，可以与光吸收层400中的元素发生反应，在光吸收层400的表面形成一层含有碱性元素的膜层，从而改变了光吸收层400表面的成分，并进一步通过离子交换改变光吸收层400的电子结构，减少了层间载流子的表面复合，使后制备处理工艺增大了电池开路电压，进而提高了电池的光电转换效率。
其中，为了保证第一碱性元素在光吸收层400中的扩散性能，同时便于与光吸收层400中的元素发生反应，第一碱性元素层300可以为NaF、KF、RbF或CsF中的一种。可以理解的是，第二碱性元素层500也可以为NaF、KF、RbF或CsF中的一种。
其中，光吸收层400可以为铜铟镓硒(CIGS)吸收层，该CIGS吸收层的厚度可以为1.8～2.5um。当第二碱性元素层500与CIGS吸收层发生反应后，会在CIGS吸收层表面形成一层XIGS膜层，其中，X表示第二碱性元素层500中的碱金属元素，比如Na、K、Rb或Cs等。
需要说明的是，铜铟镓硒吸收层组成元素的原子比例满足：0.75≤Cu/(In+Ga)≤1，0.2≤Ga/(In+Ga)≤0.5。在该比例范围下，可以有效减少界面复合，调整优化带隙宽度，增大开路电压，增加电池效率。
为了增强该薄膜太阳能电池的发电性能，钼层200的厚度可以为200～500nm，钼层200的电阻可以为500～1000mΩ。
对于缓冲层600的设置，可以通过化学水浴法制备硫化镉实现，该硫化镉层的厚度可以为20～70nm，以保证光吸收层400和透明导电层700的界面反应，增加电池的光电转化效率。
需要说明的是，为了增强光的透过率，透明导电层700的成分可以为掺铝氧化锌(ZnO:Al)，其中，铝元素也可以替换为第三族元素。同时，为了增强电池的光电转换效率，透明导电层700的厚度可以为800～1200nm，透明导电层700的电阻可以为5～30Ω。
本发明实施例提供的薄膜太阳能电池，通过设置第二碱性元素层，使第二碱性元素层中的碱金属元素与光吸收层中的元素发生反应形成含有碱金属元素的膜层，从而改变了光吸收层表面的成分，并进一步通过离子交换改变光吸收层的电子结构，减少了层间载流子的表面复合，使后制备处理工艺增大了电池开路电压，进而提高了电池的光电转换效率。
以上依据图式所示的实施例详细说明了本发明的构造、特征及作用效果，以上所述仅为本发明的较佳实施例，但本发明不以图面所示限定实施范围，凡是依照本发明的构想所作的改变，或修改为等同变化的等效实施例，仍未超出说明书与图示所涵盖的精神时，均应在本发明的保护范围内。

Claims (10)

1.一种薄膜太阳能电池，其特征在于，包括：
基板；
设置在所述基板上的第一导电层；
设置在所述第一导电层上的第一碱性元素层；
设置在所述第一碱性元素层上的光吸收层；
设置在所述光吸收层上的第二碱性元素层；
设置在所述第二碱性元素层上的缓冲层；
设置在所述缓冲层上的透明导电层。
2.根据权利要求1所述的薄膜太阳能电池，其特征在于，所述第一导电层包括钼。
3.根据权利要求1所述的薄膜太阳能电池，其特征在于，所述钼层的厚度为200～500nm，所述钼层的电阻为500～1000mΩ。
4.根据权利要求1所述的薄膜太阳能电池，其特征在于，所述光吸收层为铜铟镓硒吸收层，所述铜铟镓硒吸收层的厚度为1.8～2.5um。
5.根据权利要求1所述的薄膜太阳能电池，其特征在于，所述铜铟镓硒吸收层组成元素的原子比例满足：0.75≤Cu/(In+Ga)≤1，0.2≤Ga/(In+Ga)≤0.5。
6.根据权利要求1所述的薄膜太阳能电池，其特征在于，所述缓冲层为硫化镉层，所述硫化镉层的厚度为20～70nm。
7.根据权利要求1所述的薄膜太阳能电池，其特征在于，所述透明导电层的成分为掺铝氧化锌。
8.根据权利要求1所述的薄膜太阳能电池，其特征在于，所述透明导电层的厚度为800～1200nm，所述透明导电层的电阻为5～30Ω。
9.根据权利要求1-8任一项所述的薄膜太阳能电池，其特征在于，所述第一碱性元素层为NaF、KF、RbF或CsF中的一种。
10.根据权利要求1-8任一项所述的薄膜太阳能电池，其特征在于，所述第二碱性元素层为NaF、KF、RbF或CsF中的一种。
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