CN107785776B - Curved conical photonic crystal laser, array and array light source set - Google Patents

Abstract

The invention discloses a curved conical photonic crystal laser, an array and an array light source group. Wherein, the curved tapered photonic crystal laser includes: a ridge waveguide part, a curved waveguide part and a tapered optical amplification part which are connected in sequence; wherein, the ridge waveguide part is a straight waveguide, the curved waveguide part has a radian, and the tapered optical amplification part is along the The direction of the light output is gradually expanded. By introducing the photonic crystal structure, the intra-cavity mode can be controlled to achieve narrower vertical and horizontal divergence angles, which simplifies the optical collimation and compression system, and through the rational design of the waveguide structure, the waveguide modes of different parts can be matched without the need for a rotating machine. It can realize multi-angle and wide-range laser output under the condition of high precision, and increase the range and precision of laser irradiation and scanning. It has adjustable and low angular resolution, compact structure, high stability and low cost. It has broad application prospects in the fields of laser ranging, laser imaging, and lidar.

Description

Bent tapered photonic crystal laser and array, array light source group

technical field

The present disclosure belongs to the technical field of semiconductor optoelectronic devices, and relates to a curved tapered photonic crystal laser, an array, and an array light source group.

Background technique

Semiconductor lasers are light sources with the highest electro-optical conversion efficiency, and have the advantages of wide coverage, long life, direct modulation, small size, and low cost. It has a wide range of applications in laser ranging, laser imaging, optical information storage and other fields. The early light sources used for laser ranging and laser imaging were ruby lasers and CO ₂ gas lasers. However, compared with semiconductor lasers, solid-state lasers and gas lasers face the disadvantages of large volume, low efficiency and poor reliability. And with the maturity of the semiconductor laser manufacturing process, the output power of semiconductor lasers continues to increase, and the cost continues to decrease, which promotes the rapid development of laser radars using semiconductor lasers as light sources, and becomes a hot spot in the research and development of laser radars.

In the lidar device, in order to effectively carry out laser imaging and laser ranging, the light source needs to perform wide-angle, large-scale, high-precision scanning and irradiation. The larger the scanning range, the larger the imaging range, and the surrounding information can be perceived. The more; the smaller the divergence angle of the light source used for scanning, the more data points can be obtained and the higher the imaging accuracy. At this stage, commercial semiconductor lasers have a horizontal divergence angle of 10 to 25 degrees and a vertical divergence angle of about 40 degrees. The detection range is limited and the angular resolution is poor. It is often used with a series of compression collimation optical systems. In order to increase the scanning range, some commercial lidar devices place the semiconductor laser on a rotatable machine table, and through the rotation of the machine table, the scanning range of the semiconductor laser is increased, but this significantly increases the volume of the lidar device, system complexity and Instability also increases its cost.

SUMMARY OF THE INVENTION

(1) Technical problems to be solved

The present disclosure provides a curved tapered photonic crystal laser, an array, and an array light source group to at least partially solve the above-mentioned technical problems.

(2) Technical solutions

According to one aspect of the present disclosure, there is provided a curved tapered photonic crystal laser, comprising: a ridge waveguide portion, a curved waveguide portion and a tapered optical amplification portion connected in sequence; wherein the ridge waveguide portion is a straight waveguide, and the curved waveguide portion has A radian, the tapered light amplifying portion gradually expands in the direction of the light output.

In some embodiments of the present disclosure, the epitaxial structure of the ridge waveguide portion, the curved waveguide portion, and the tapered optical amplification portion is a stacked structure, and the stacked structure sequentially includes: an N-type substrate, an N-type confinement layer from bottom to top , photonic crystal layer, active layer, P-type confinement layer, P-type cap layer; the successively connected ridge waveguide part, curved waveguide part and tapered light amplification part are engraved on the P-type cap layer from the upper surface of the laminated structure formed by etching, the ridge waveguide part, the curved waveguide part and the tapered light amplification part become the protruding parts, and the remaining concave parts are the remaining P-type cap layers after etching.

In some embodiments of the present disclosure, a curved tapered photonic crystal laser further includes: a lower electrode formed under the N-type substrate; an electrically insulating layer over the recessed portion; and an upper electrode over the raised portion part above.

In some embodiments of the present disclosure, the ridge waveguide portion is a straight waveguide, and the width of the ridge waveguide portion is between 300 nm and 200 μm; and/or the cross section of the ridge waveguide includes: rectangle, trapezoid or triangle; and/or curved The width of the waveguide part is between 300nm and 200μm, the bending radius is between 50μm and 500μm, and the length is between 50μm and 500μm; and/or the width of the initial end of the tapered light amplification part is between 300nm and 50μm. , the opening angle θ ₁ is between 0° and 15°, the inclination angle θ ₂ is between 0° and 15°, and the length is between 50 μm and 500 μm.

In some embodiments of the present disclosure, the structure of the active layer includes: quantum wells, quantum wires or quantum dots, the material of the active layer is a III-V group semiconductor material or a II-VI group semiconductor material, and the active layer has a The peak wavelength range of the gain spectrum covers near ultraviolet to infrared; and/or the material of the electrical insulating layer includes: SiO ₂ , SiN ₄ or Al ₂ O ₃ .

According to another aspect of the present disclosure, a curved tapered photonic crystal laser array is provided, comprising: at least two curved tapered photonic crystal lasers of any one mentioned in the present disclosure.

In some embodiments of the present disclosure, by changing the length of the ridge waveguide in each curved tapered photonic crystal laser, the radius and length of the curved waveguide portion, and the opening angle and the inclination angle of the tapered light amplifying portion, it is possible to ensure that the different portions are Under the condition of waveguide mode matching, the lateral far-field output of different declination angles can be realized.

In some embodiments of the present disclosure, the spacing between the respective curved tapered photonic crystal lasers is between 300 nm and 500 μm, and the spacing here means the spacing between the ridge waveguide portions.

According to yet another aspect of the present disclosure, an array light source group is provided, comprising at least two curved tapered photonic crystal laser arrays arranged above and below, through spatial displacement and differences between the respective curved tapered photonic crystal lasers Arrangement, so that the upper and lower at least two photonic crystal laser array far-field lateral deflection angles are staggered.

In some embodiments of the present disclosure, the number of curved tapered photonic crystal laser arrays is N, including: a first light source array, a second light source array, ..., the ith light source array, ..., the ith light source array N light source arrays; wherein, N≥2; the lateral deflection output of the light-emitting units in the first light source array includes: ..., -4°, 0°, 4°, 8°, ...; The lateral deflection output of the light-emitting units in the light source arrays includes: ..., ( _ki -4)°, _ki °, ( _ki +4)°, ( _ki +8)°, ...; Among them, _i =1, 2, .

In some embodiments of the present disclosure, the imaging area of the array light source group covers a range of -30° to 30°, and the angular resolution of the array light source group is better than 2°.

(3) Beneficial effects

It can be seen from the above technical solutions that the curved tapered photonic crystal laser, array, and array light source group provided by the present disclosure have the following beneficial effects:

By introducing the photonic crystal structure, the intra-cavity mode can be controlled to achieve narrower vertical and horizontal divergence angles, which simplifies the optical collimation and compression system, and through the rational design of the waveguide structure, the waveguide modes of different parts can be matched without rotating the machine. It can realize multi-angle and wide-range laser output under the condition of high precision, and increase the range and precision of laser irradiation and scanning. It has adjustable, low angular resolution, compact structure, high stability and low cost. It has broad application prospects in the fields of laser ranging, laser imaging, and lidar.

Description of drawings

1 is a top view of a curved tapered photonic crystal laser array for laser imaging according to an embodiment of the present disclosure.

FIG. 2 is a front view of an array light source group for laser imaging according to an embodiment of the present disclosure.

3 is a horizontal far-field diagram of a curved tapered photonic crystal laser for laser imaging according to an embodiment of the present disclosure.

4 is a vertical far-field view of a curved tapered photonic crystal laser for laser imaging according to an embodiment of the present disclosure.

5A is a schematic diagram of a far-field output light spot of a single curved tapered photonic crystal laser in a first light source array located at an angle of 0° from a horizontal position according to an embodiment of the present disclosure.

6A is a schematic diagram of a far-field output light spot of a single curved tapered photonic crystal laser in a first light source array located at an angle of 4° from a horizontal position according to an embodiment of the present disclosure.

7A is a schematic diagram of a far-field output light spot of a single curved tapered photonic crystal laser in a first light source array located at an angle of 8° from a horizontal position according to an embodiment of the present disclosure.

8A is a schematic diagram of a far-field output light spot of a single curved tapered photonic crystal laser in a first light source array located at an angle of 12° from a horizontal position according to an embodiment of the present disclosure.

9A is a schematic diagram of a far-field output light spot of a single curved tapered photonic crystal laser in a first light source array located at an angle of 16° from a horizontal position according to an embodiment of the present disclosure.

10A is a schematic diagram of a far-field output light spot of a single curved tapered photonic crystal laser in a first light source array located at an angle of 20° from a horizontal position according to an embodiment of the present disclosure.

11A is a schematic diagram of a far-field output light spot of a single curved tapered photonic crystal laser in a first light source array located at an angle of 24° from a horizontal position according to an embodiment of the present disclosure.

12A is a schematic diagram of a far-field output light spot of a single curved tapered photonic crystal laser in a first light source array located at an angle of 28° from a horizontal position according to an embodiment of the present disclosure.

5B is a schematic diagram of a far-field output light spot of a single curved tapered photonic crystal laser in the second light source array located at an angle of 2° from a horizontal position according to an embodiment of the present disclosure.

6B is a schematic diagram of a far-field output light spot of a single curved tapered photonic crystal laser in a second light source array located at an angle of 6° from a horizontal position according to an embodiment of the present disclosure.

7B is a schematic diagram of a far-field output light spot of a single curved tapered photonic crystal laser in a second light source array located at an angle of 10° from a horizontal position according to an embodiment of the present disclosure.

8B is a schematic diagram of a far-field output light spot of a single curved tapered photonic crystal laser in a second light source array located at an angle of 14° from a horizontal position according to an embodiment of the present disclosure.

9B is a schematic diagram of a far-field output light spot of a single curved tapered photonic crystal laser in a second light source array located at an angle of 18° from a horizontal position according to an embodiment of the present disclosure.

10B is a schematic diagram of a far-field output light spot of a single curved tapered photonic crystal laser in the second light source array located at an angle of 22° from a horizontal position according to an embodiment of the present disclosure.

11B is a schematic diagram of a far-field output light spot of a single curved tapered photonic crystal laser in the second light source array located at an angle of 26° from a horizontal position according to an embodiment of the present disclosure.

12B is a schematic diagram of a far-field output light spot of a single curved tapered photonic crystal laser in a second light source array located at an angle of 30° from a horizontal position according to an embodiment of the present disclosure.

【Symbol Description】

101-lower electrode; 102-N type substrate;

103-N-type confinement layer; 104-photonic crystal layer;

105-active layer; 106-P-type confinement layer;

107-P type cover layer; 108-electrical insulating layer;

109-upper electrode;

3-ridge waveguide part; 4-curved waveguide part;

5- Conical light magnification section.

Detailed ways

The present disclosure provides a curved tapered photonic crystal laser, an array, and an array light source group. By introducing a photonic crystal structure, the intra-cavity mode is controlled to achieve narrower vertical and horizontal divergence angles, which simplifies the optical collimation and compression system. Reasonable design of the waveguide structure to match the waveguide modes of different parts, multi-angle and wide-range laser output can be achieved without the need for a rotating machine, and the range and accuracy of laser irradiation and scanning are increased. It has the advantages of low angular resolution, compact structure, high stability and low cost, and has broad application prospects in the fields of laser ranging, laser imaging, and lidar.

In order to make the objectives, technical solutions and advantages of the present disclosure clearer, the present disclosure will be further described in detail below with reference to the specific embodiments and the accompanying drawings.

In the present disclosure, by rationally designing and optimizing the waveguide structure, the laser output direction deviates from the axial direction by a certain angle, and changing the waveguide structure can achieve different angles of output, thereby realizing multi-angle and wide-range laser output, and increasing laser irradiation and scanning. scope. At the same time, the photonic crystal can control the intracavity mode to achieve a horizontal divergence angle of only 4 degrees and a vertical divergence angle of less than 10 degrees, which can effectively simplify the complexity of the optical system.

In a first exemplary embodiment of the present disclosure, a curved tapered photonic crystal laser is provided.

1 is a top view of a curved tapered photonic crystal laser array for laser imaging according to an embodiment of the present disclosure. FIG. 2 is a front view of an array light source group for laser imaging according to an embodiment of the present disclosure.

1 and 2, the curved tapered photonic crystal laser of the present disclosure includes: a ridge waveguide portion 3, a curved waveguide portion 4 and a tapered (Taper) optical amplifying portion 5 connected in sequence; wherein , the ridge waveguide portion 3 is a straight waveguide, the curved waveguide portion has an arc, and the tapered light amplifying portion gradually expands along the direction of light output.

Each part of the curved tapered photonic crystal laser of the present disclosure will be described in detail below with reference to FIG. 1 and FIG. 2 .

Referring to FIG. 2 , the epitaxial structure of the ridge waveguide portion 3 , the curved waveguide portion 4 and the tapered optical amplifying portion 5 is a laminated structure, including: an N-type substrate 102 ; The lower surface; the N-type confinement layer 103 is formed on the upper surface of the N-type substrate 102; the photonic crystal layer 104 is formed on the N-type confinement layer 103; the active layer 105 is formed on the photonic crystal layer 104; P A type confinement layer 106 is formed on the active layer 105; and a P-type capping layer 107 is formed on the P-type confinement layer 106; the successively connected ridge waveguide portion 3, curved waveguide portion 4 and Taper optical amplification portion 5 It is formed by etching the P-type cap layer 107 from the upper surface of the laminated structure. The protruding parts include: the ridge waveguide part 3, the curved waveguide part 4 and the tapered light amplification part 5, and the concave part is the remaining part after etching. The upper surface of the lower P-type capping layer 107; the electrical insulating layer 108, located on the recessed portion; the upper electrode 109, on the P-type capping layer 107 in the protruding portion.

Referring to FIG. 1 , the length of the ridge waveguide portion 3 is d ₁ , which represents the length of the ridge waveguide portion 3 along the y direction; the curved waveguide portion 4 has an arc, and the radius corresponding to the arc length is R, and the curved waveguide portion 4 has an arc. The length of the portion 4 along the v direction is d ₂ ; the tapered light amplifying portion 5 gradually expands along the light output direction, and has an opening angle θ ₁ and an inclination angle θ ₂ , wherein the opening angle is the conical light magnification. The opening angle formed by the two sides of the part, the inclination angle is the angle between the more inclined side and the positive direction of the y-axis, through these two parameters, the direction and opening size of the conical light amplifying part 5 can be determined; 5 The length along the y direction is d ₃ .

In this embodiment, the ridge waveguide portion 3 is a straight waveguide, and the width of the ridge waveguide portion 3 is between 300 nm and 200 μm; the cross section of the ridge waveguide includes but is not limited to: rectangle, trapezoid or triangle.

In this embodiment, the width of the curved waveguide portion 4 is between 300 nm and 200 μm, the bending radius is between 50 μm and 500 μm, and the length is between 50 μm and 500 μm.

In this embodiment, the width of the initial end of the tapered light amplifying portion 5 is between 300 nm and 50 μm, the opening angle θ ₁ is between 0° and 15°, and the inclination angle θ ₂ is between 0° and 15°. Its length is between 50 μm and 500 μm.

In this embodiment, the photonic crystal layer 104 is a common photonic crystal structure, but the present disclosure is not limited thereto, and other symmetric and asymmetric waveguide structures may also be used.

In this embodiment, the structure used in the active layer 105 includes: quantum wells, quantum wires or quantum dots, the materials used are III-V semiconductor materials or II-VI semiconductor materials, and the peak wavelength range of the gain spectrum covers near ultraviolet to Infrared band.

In this embodiment, the material of the electrical insulating layer 108 includes: SiO ₂ , SiN ₄ or Al ₂ O ₃ and the like.

In this embodiment, an epitaxial wafer of a photonic crystal semiconductor laser on a GaAs substrate with an emission wavelength of 980 nm is used to manufacture the curved tapered photonic crystal laser. The production process mainly includes: 1. Making an epitaxial wafer: sequentially growing an N-type confinement layer, a photonic crystal layer, an active layer, a P-type confinement layer and a P-type cap layer on a GaAs substrate to prepare an epitaxial wafer; 2. Making a ridge Waveguide part, curved waveguide part and taper optical amplification part: The ridge waveguide part, curved waveguide part and taper optical amplification part are etched by basic photolithography, inductively coupled plasma etching (ICP) process; Insulation layer: A layer of silicon dioxide insulating material is deposited on the entire epitaxial wafer, and then the silicon dioxide on the mesa of the implanted area is etched away by photolithography and wet etching to form an implantation window, and finally Ti/Pt is grown on the p-side /Au material is used as the front electrode, and after the substrate is thinned, gold-germanium-nickel-gold material is grown on the n-side as the back electrode.

The ridge waveguide portion 3, the curved waveguide portion 4 and the Taper optical amplifying portion 5 can be electrically injected in unison to form a Taper laser, or by making an electrical isolation region between the curved waveguide portion 4 and the Taper optical amplifying portion 5 on the electrode 109 , forming a master oscillator power amplifier (MOPA) structure.

In a second exemplary embodiment of the present disclosure, a curved tapered photonic crystal laser array is provided, and a curved tapered photonic crystal laser array includes at least two curved tapered photonic crystals shown in the first embodiment Laser; by changing the length of the ridge waveguide section 3, the radius and length of the curved waveguide section 4, and the opening angle and tilt angle of the Taper optical amplification section 5 in each curved tapered photonic crystal laser, the mode matching of the waveguides in different sections is guaranteed. Under the condition of different declination angles, the lateral far-field output can be realized.

The spacing between each curved tapered photonic crystal laser is the same or different, and the formed array is arranged in a uniform or non-uniform way; The distance between them shall prevail.

In this embodiment, there are 17 curved tapered photonic crystal lasers in the curved tapered photonic crystal laser array, of which the 9th light-emitting unit located in the middle from left to right has its beam pointing at an angle of 0 degrees, and the other 16 light-emitting units The mirrors are symmetrically distributed on both sides of the light-emitting unit, and the imaging area covers a range from -30 degrees to 30 degrees.

3 is a horizontal far-field diagram of a curved tapered photonic crystal laser for laser imaging according to an embodiment of the present disclosure. 4 is a vertical far-field view of a curved tapered photonic crystal laser for laser imaging according to an embodiment of the present disclosure.

Referring to FIG. 3 and FIG. 4 , it can be seen that the curved tapered photonic crystal laser array in this embodiment achieves a horizontal divergence angle of only 4° by adjusting the intra-cavity mode, as shown in FIG. 3 where the value of the half-peak width is 4° ; The vertical divergence angle is less than 10°, as shown in Figure 4, where the value of the half-peak width is 9.2°.

Then it can be seen from the above that the minimum angular accuracy that a curved tapered photonic crystal laser array can achieve in the horizontal direction is 4°. A photonic crystal laser with a curved tapered photonic crystal laser array arranged above and below, by spatially shifting each curved tapered photonic crystal laser array and different arrangements of the respective curved tapered photonic crystal lasers, to achieve The far-field lateral declination angles of the upper and lower photonic crystal laser arrays are staggered, thereby realizing angular output adjustment with smaller precision.

In the third exemplary embodiment of the present disclosure, an array light source group including two curved tapered photonic crystal laser arrays is provided, and the two curved tapered photonic crystal laser arrays are arranged above and below, and are arranged through spatial Displacement and different arrangements of the respective curved tapered photonic crystal lasers to achieve a staggered distribution of the far-field lateral deflection angles of the upper and lower curved tapered photonic crystal laser arrays, thereby achieving smaller precision angular resolution adjustment .

Referring to FIG. 2, in this embodiment, the upper and lower curved tapered photonic crystal laser arrays are arranged correspondingly. The upper light source array shown in FIG. 2 is called the first light source array, and the lower light source array is called the first light source array. is the second light source array, wherein the first light source array includes 15 curved conical photonic crystal lasers, and the lateral deflection angle outputs of the light-emitting units of the first light source array are: 0°, 4°, 8°, ..., 28°; in the second light source array, including 16 curved conical photonic crystal lasers, the output of the lateral deflection angle of the light-emitting units of the second light source array is: 2°, 6°, 10°, . .., 30°. The lateral deflection angle outputs of the two curved tapered photonic crystal laser arrays have a deflection angle offset value, which is 2° in this embodiment, thereby achieving a lower angular resolution.

Therefore, in order to achieve lower angular resolution, the photonic crystal array light source can be extended to multiple arrays. In a similar manner to the above, the output of the lateral deflection angle of the light-emitting unit in the first light source array includes: 0°, 4°, 8°, . . . ; the output of the lateral deflection angle of the light-emitting unit in the i-th light source array Including: _ki °, ( _ki +4)°, ( _ki +8)°, ...; where, i=1, 2, ..., N, N is the total number of arrays; ki is As long as the declination misalignment value of the i-th light source array and the previous light source array meets the actual device parameters and requirements, the corresponding declination misalignment value and the number of arrays can be matched and selected; in addition, refer to the second embodiment. In the case of , the output angle can also be a negative angle, which can be achieved by arranging the light-emitting units in the form of mirror-symmetrical distribution.

5A is a schematic diagram of a far-field output light spot of a single curved tapered photonic crystal laser in a first light source array located at an angle of 0° from a horizontal position according to an embodiment of the present disclosure. Referring to FIG. 5A , in this embodiment, the far-field output light spot is located at an angle of 0° from the horizontal position, the length of the ridge waveguide part is 800 nm, there is no curved waveguide part, the length of the taper optical amplification part is 400 nm, and the opening angle is 2 °, without tilt angle.

6A is a schematic diagram of a far-field output light spot of a single curved tapered photonic crystal laser in a first light source array located at an angle of 4° from a horizontal position according to an embodiment of the present disclosure. Referring to FIG. 6A , in this embodiment, the far-field output light spot is located at an angle of 4° from the horizontal position, the length of the ridge waveguide part is 500 nm, the radius of the curved waveguide part is 1 mm, the length of the taper optical amplification part is 400 nm, and the opening angle is 400 nm. is 2° and the inclination angle is 1°.

7A is a schematic diagram of a far-field output light spot of a single curved tapered photonic crystal laser in a first light source array located at an angle of 8° from a horizontal position according to an embodiment of the present disclosure. Referring to FIG. 7A , in this embodiment, the far-field output light spot is located at an angle of 8° from the horizontal position, the length of the ridge waveguide part is 300 nm, the radius of the curved waveguide part is 1 mm, the length of the taper optical amplification part is 400 nm, and the opening is The angle is 2° and the inclination angle is 2.5°.

8A is a schematic diagram of a far-field output light spot of a single curved tapered photonic crystal laser in a first light source array located at an angle of 12° from a horizontal position according to an embodiment of the present disclosure. Referring to FIG. 8A , in this embodiment, the far-field output light spot is located at an angle of 12° from the horizontal position, the length of the ridge waveguide part is 200 nm, the radius of the curved waveguide part is 1 mm, the length of the taper optical amplification part is 400 nm, and the opening The angle is 2° and the inclination angle is 3°.

9A is a schematic diagram of a far-field output light spot of a single curved tapered photonic crystal laser in a first light source array located at an angle of 16° from a horizontal position according to an embodiment of the present disclosure. Referring to FIG. 9A , in this embodiment, the far-field output light spot is located at an angle of 16° from the horizontal position, the length of the ridge waveguide part is 100 nm, the radius of the curved waveguide part is 1 mm, the length of the taper optical amplification part is 400 nm, and the opening is The angle is 2° and the inclination angle is 3.5°.

10A is a schematic diagram of a far-field output light spot of a single curved tapered photonic crystal laser in a first light source array located at an angle of 20° from a horizontal position according to an embodiment of the present disclosure. Referring to FIG. 10A , in this embodiment, the far-field output light spot is located at an angle of 20° from the horizontal position, the length of the ridge waveguide part is 100 nm, the radius of the curved waveguide part is 1 mm, the length of the taper optical amplification part is 400 nm, and the opening The angle is 2° and the inclination angle is 4.5°.

11A is a schematic diagram of a far-field output light spot of a single curved tapered photonic crystal laser in a first light source array located at an angle of 24° from a horizontal position according to an embodiment of the present disclosure. Referring to FIG. 11A , in this embodiment, the far-field output light spot is located at an angle of 24° from the horizontal position, the length of the ridge waveguide part is 100 nm, the radius of the curved waveguide part is 1 mm, the length of the taper optical amplification part is 400 nm, and the opening The angle is 2° and the inclination angle is 5.5°.

12A is a schematic diagram of a far-field output light spot of a single curved tapered photonic crystal laser in a first light source array located at an angle of 28° from a horizontal position according to an embodiment of the present disclosure. Referring to FIG. 12A , in this embodiment, the far-field output light spot is located at an angle of 28° from the horizontal position, the length of the ridge waveguide part is 100 nm, the radius of the curved waveguide part is 1 mm, the length of the taper optical amplification part is 400 nm, and the opening The angle is 2° and the inclination angle is 6.5°.

5B is a schematic diagram of a far-field output light spot of a single curved tapered photonic crystal laser in the second light source array located at an angle of 2° from a horizontal position according to an embodiment of the present disclosure. Referring to FIG. 5B , in this embodiment, the far-field output light spot is located at an angle of 2° from the horizontal position, the length of the ridge waveguide part is 100 nm, the radius of the curved waveguide part is 1 mm, the length of the taper optical amplification part is 400 nm, and the opening is The angle is 1.5° and the inclination angle is 0.5°.

6B is a schematic diagram of a far-field output light spot of a single curved tapered photonic crystal laser in a second light source array located at an angle of 6° from a horizontal position according to an embodiment of the present disclosure. Referring to FIG. 6B , in this embodiment, the far-field output light spot is located at an angle of 6° from the horizontal position, the length of the ridge waveguide part is 100 nm, the radius of the curved waveguide part is 1 mm, the length of the taper optical amplification part is 400 nm, and the opening is The angle is 1.5° and the inclination angle is 1.5°.

7B is a schematic diagram of a far-field output light spot of a single curved tapered photonic crystal laser in a second light source array located at an angle of 10° from a horizontal position according to an embodiment of the present disclosure. Referring to FIG. 7B, in this embodiment, the far-field output light spot is located at an angle of 10° from the horizontal position, the length of the ridge waveguide part is 100 nm, the radius of the curved waveguide part is 1 mm, the length of the taper optical amplification part is 400 nm, and the opening is The angle is 1.5° and the inclination angle is 2.5°.

8B is a schematic diagram of a far-field output light spot of a single curved tapered photonic crystal laser in a second light source array located at an angle of 14° from a horizontal position according to an embodiment of the present disclosure. Referring to FIG. 8B , in this embodiment, the far-field output light spot is located at an angle of 14° from the horizontal position, the length of the ridge waveguide part is 100 nm, the radius of the curved waveguide part is 1 mm, the length of the taper optical amplification part is 400 nm, and the opening is The angle is 1.5° and the inclination angle is 3.5°.

9B is a schematic diagram of a far-field output light spot of a single curved tapered photonic crystal laser in a second light source array located at an angle of 18° from a horizontal position according to an embodiment of the present disclosure. Referring to FIG. 9B , in this embodiment, the far-field output light spot is located at an angle of 18° from the horizontal position, the length of the ridge waveguide part is 100 nm, the radius of the curved waveguide part is 1 mm, the length of the taper optical amplification part is 400 nm, and the opening is The angle is 1.5° and the inclination angle is 4.5°.

10B is a schematic diagram of a far-field output light spot of a single curved tapered photonic crystal laser in the second light source array located at an angle of 22° from a horizontal position according to an embodiment of the present disclosure. Referring to FIG. 10B , in this embodiment, the far-field output light spot is located at an angle of 22° from the horizontal position, the length of the ridge waveguide part is 100 nm, the radius of the curved waveguide part is 1 mm, the length of the taper optical amplification part is 400 nm, and the opening The angle is 1.5° and the inclination angle is 5°.

11B is a schematic diagram of a far-field output light spot of a single curved tapered photonic crystal laser in the second light source array located at an angle of 26° from a horizontal position according to an embodiment of the present disclosure. Referring to FIG. 11B , in this embodiment, the far-field output light spot is located at an angle of 26° from the horizontal position, the length of the ridge waveguide part is 100 nm, the radius of the curved waveguide part is 1 mm, the length of the taper optical amplification part is 400 nm, and the opening The angle is 1.5° and the inclination angle is 6°.

12B is a schematic diagram of a far-field output light spot of a single curved tapered photonic crystal laser in a second light source array located at an angle of 30° from a horizontal position according to an embodiment of the present disclosure. Referring to FIG. 12B , in this embodiment, the far-field output light spot is located at an angle of 30° from the horizontal position, the length of the ridge waveguide part is 100 nm, the radius of the curved waveguide part is 1 mm, the length of the taper optical amplification part is 400 nm, and the opening The angle is 1.5° and the inclination angle is 6.5°.

In summary, the present disclosure provides a curved tapered photonic crystal laser, an array, and an array light source group. By introducing a photonic crystal structure, the intra-cavity mode can be controlled to achieve narrower vertical and horizontal divergence angles, which simplifies optical collimation, Compression system, and by rationally designing the waveguide structure to match the waveguide modes of different parts, multi-angle and wide-range laser output can be achieved without the need for a rotating machine, and the range of laser irradiation and scanning is increased. Accuracy, adjustable, low angular resolution, compact structure, high stability, low cost, and have broad application prospects in laser ranging, laser imaging, lidar and other fields.

It should be noted that the directional terms mentioned in the embodiments, such as "up", "down", "front", "rear", "left", "right", etc., only refer to the directions of the drawings, not to limit the scope of protection of the present disclosure. Throughout the drawings, the same elements are denoted by the same or similar reference numbers. Conventional structures or constructions will be omitted when it may lead to obscuring the understanding of the present disclosure. Moreover, the shapes and sizes of the components in the figures do not reflect the actual size and proportion, but merely illustrate the contents of the embodiments of the present disclosure. Furthermore, in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim.

Unless known to the contrary, the numerical parameters set forth in this specification and attached claims are approximations that can vary depending upon the desired properties sought to be obtained from the teachings of the present disclosure. Specifically, all numbers used in the specification and claims to indicate compositional contents, reaction conditions, etc., should be understood as being modified by the word "about" in all cases. In general, the meaning expressed is meant to include a change of ±10% in some embodiments, a change of ±5% in some embodiments, a change of ±1% in some embodiments, and a change of ±1% in some embodiments. Example ±0.5% variation.

Furthermore, the word "comprising" or "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements.

The ordinal numbers such as "first", "second", "third", etc. used in the description and the claims are used to modify the corresponding elements, which themselves do not mean that the elements have any ordinal numbers, nor do they Representing the order of a certain element and another element, or the order in the manufacturing method, the use of these ordinal numbers is only used to clearly distinguish an element with a certain name from another element with the same name.

Similarly, it will be appreciated that in the above description of exemplary embodiments of the disclosure, various features of the disclosure are sometimes grouped together into a single embodiment, figure, or its description. However, this method of disclosure should not be interpreted as reflecting an intention that the claimed disclosure requires more features than are expressly recited in each claim. Rather, as the following claims reflect, disclosed aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the Detailed Description are hereby expressly incorporated into this Detailed Description, with each claim standing on its own as a separate embodiment of the present disclosure.

The specific embodiments described above further describe the purpose, technical solutions and beneficial effects of the present disclosure in detail. It should be understood that the above-mentioned specific embodiments are only specific embodiments of the present disclosure, and are not intended to limit the present disclosure. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present disclosure should be included within the protection scope of the present disclosure.

Claims (11)

1. A curved tapered photonic crystal laser, comprising: The ridge waveguide part, the curved waveguide part and the tapered light amplifying part are connected in sequence; The ridge waveguide portion is a straight waveguide, the curved waveguide portion has a radian, and the tapered light amplifying portion gradually expands along the light output direction. 2 . The curved tapered photonic crystal laser according to claim 1 , wherein the epitaxial structure of the ridge waveguide portion, the curved waveguide portion and the tapered optical amplification portion is a laminated structure, and the laminated structure is sequentially arranged from bottom to top. 3 . It includes: an N-type substrate, an N-type confinement layer, a photonic crystal layer, an active layer, a P-type confinement layer, and a P-type cap layer; the ridge waveguide part, the curved waveguide part and the tapered light amplification part connected in sequence are derived from The upper surface of the laminated structure is formed by etching the P-type cap layer, the ridge waveguide part, the curved waveguide part and the tapered light amplification part become the protruding part, and the remaining concave parts are the remaining P-type after etching cover layer. 3. The curved tapered photonic crystal laser of claim 2, further comprising: The lower electrode is formed under the N-type substrate; an electrically insulating layer over the recessed portion; and The upper electrode is located above the protruding part. 4. The curved tapered photonic crystal laser of claim 1, wherein: The ridge waveguide part is a straight waveguide, and the width of the ridge waveguide part is between 300 nm and 200 μm; and/or the cross section of the ridge waveguide includes: a rectangle, a trapezoid or a triangle; and/or The width of the curved waveguide portion is between 300 nm and 200 μm, the bending radius is between 50 μm and 500 μm, and the length is between 50 μm and 500 μm; and/or The width of the initial end of the tapered light amplification part is between 300nm and 50μm, the opening angle _θ1 is between 0° and 15°, the inclination angle θ2 is between ₀ ° and 15°, and the length is between 0° and 15°. Between 50μm and 500μm. 5. The curved tapered photonic crystal laser of claim 2, wherein, The structure of the active layer includes: quantum wells, quantum wires or quantum dots, the material of the active layer is III-V group semiconductor material or II-VI group semiconductor material, and the peak wavelength range of the gain spectrum of the active layer covers nearly UV to IR bands. 6. The curved tapered photonic crystal laser according to claim ₃ , wherein the material of the electrically insulating layer comprises: _SiO2 , SiN4 or _Al2O3 . 7. A curved tapered photonic crystal laser array comprising: at least two curved tapered photonic crystal lasers according to any one of claims 1 to 6; by varying the length of the ridge waveguide, the radius and length of the curved waveguide portion, and the tapered waveguide in each of the curved tapered photonic crystal lasers The opening angle and the inclination angle of the optical amplifying part can be adjusted to realize the lateral far-field output of different inclination angles under the condition of ensuring the mode matching of the waveguides of different parts. 8 . The curved tapered photonic crystal laser array according to claim 7 , wherein the spacing between each of the curved tapered photonic crystal lasers is between 300 nm and 500 μm, and the spacing here means between the ridge waveguide portions. 9 . Pitch. 9. An array light source group, comprising at least two curved tapered photonic crystal laser arrays as claimed in claim 7 arranged above and below, by spatial displacement and different rows of curved tapered photonic crystal lasers respectively cloth, so as to realize the staggered distribution of the far-field lateral deflection angles of the upper and lower photonic crystal laser arrays. 10. The array light source group according to claim 9, wherein the number of the curved tapered photonic crystal laser arrays is N, including: a first light source array, a second light source array, ..., the i-th array Light source array, ..., the Nth light source array; wherein, N≥2; The lateral deflection output of the light-emitting units in the first light source array includes: ..., -4°, 0°, 4°, 8°, ...; the lateral deflection of the light-emitting units in the i-th light source array The declination output includes: ..., ( _ki -4)°, _ki °, ( _ki +4)°, ( _ki +8)°, ...; where i=1, 2, . .., N, N is the total number of arrays; k _i is the declination misalignment value between the i-th light source array and the previous light source array. The array light source group according to claim 9 or 10, wherein the imaging area of the array light source group covers a range of -30° to 30°, and the angular resolution of the array light source group is better than 2°.

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