CN106124955B - The transient electrical test method of liquid cold plate thermal resistance - Google Patents
The transient electrical test method of liquid cold plate thermal resistance Download PDFInfo
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Abstract
A kind of a kind of transient electrical test method of liquid cold plate thermal resistance proposed by the present invention, it is desirable to provide method of rapid survey high heat flux density electronic equipment liquid cold plate thermal resistance.The technical scheme is that: thermal transient tester T3Ster instrument is connected computer, semiconductor device and its adapter is connected on the corresponding interface of T3Ster test host；Voltage temperature coefficient (k-factor) value of the tested semiconductor device tested out, and save file；Then in the T3Ster test software of built-in computer, according to semiconductor device and cold plate characteristic, heating time, cooling time, heated current, test electric current and voltmeter range major parameter are set；The cooling curve of tested semiconductor device is obtained with the test of T3Ster transient electrical；Data analysis is carried out, removes the noise in test curve, mathematic(al) manipulation is carried out to test curve；Computing differential structure function isolates the thermal resistance numerical value of tested liquid cold plate according to differential structrue function, obtains cold plate thermal resistance value.
Description
Technical field
The invention belongs to the thermo-resistance measurement methods in electronic equipment thermal control field.
Background technique
With the progress of science and technology, the complexity of electronic equipment is continuously improved, and displacement volume increases with benefit, from body
Product sharply reduces, and with the sharp increase of electronic component summation watt rating, the type of cooling of natural cooling and forced air cooling has been difficult to full
The needs of sufficient electronic component thermal design.A kind of heat exchange equipment of the cold plate as efficient maturation, obtains in Electronic cooling
It is widely applied.Currently, the development of electronic device gradually tend to micromation and it is integrated.Micromation and integrated electronic device
Processing and assembly difficulty are not only increased, while increasing the heat dissipation difficulty of electronic device.According to statistics, most electronics device
Part damage is due to caused by temperature overheating.The heat flow density of pyrotoxin (chip) in electronic equipment is higher and higher, in engineering
Application have reached 300W/cm2Magnitude, it is contemplated that 1000W/cm will be reached quickly2This order of magnitude.The especially integrated electricity of silicon
The appearance on road, so that the integrated level of circuit sharply increases.For chip higher for these integrated levels, the heat generated is anxious
Increase severely and add, lead to the raising of heat flow density, and then electronic equipment temperature is caused to increase, so that electronic equipment be made to fail.
With semiconductor devices power, the continuous improvement of frequency, integrated level, the high power consumption of generation can make the work of device chip
It is sharply increased as temperature rise.According to arrhenius model, device lifetime exponentially declines with temperature.Temperature rise not only can be to semiconductor device
The part service life has an impact, and also will affect the characteristic of device and causes other failure mechanisms.Therefore, precise measurement semiconductor device
The temperature rise of part and thermal resistance have very important meaning to device performance is improved.Common thermal characteristics heat technique can be divided into physics and connect
Touching method, optical method, electric method three categories.Physical contact method, which refers to, carries out direct physical contact temperature sensor and measured device
To carry out temperature measurement.Optical method is the technological means for carrying out temperature measurement to semiconductor devices using the characteristic of light, is usually surveyed
Measure the characteristics such as its natural exciting radiation, reflected radiation and scattering.The larger limitation of one of physical contact method and optical means is exactly
It can only obtain the Temperature Distribution in device surface direction, the Temperature Distribution and thermal resistance that can not but obtain device longitudinal direction constitute distribution.Electricity
Method is the powerful for measuring the thermal characteristics such as temperature rise and the thermal resistance of semiconductor devices.Many electrical parameters of semiconductor devices are all
There are very strong temperature dependency, such as PN junction forward conduction voltage, threshold voltage, leakage current and gain etc..Therefore, by right
The careful measurement of more temperature sensitive parameters of electricity, the operating temperature of available semiconductor devices.
In existing electronic device cooling mode, even if traditional forced air cooling technology is big using Advanced Fan and optimization
When area is heat sink, cooling capacity also only can reach 20W/cm2, and such heat-removal modalities can occupy very large space and waste
A large amount of material.And liquid cold plate is widely used as a kind of efficient heat exchange equipment, in the cooling of some electronic devices
In the middle, heat conductive efficiency is high, and heat power is 20 times or more of traditional air cooling way.Not only heat conductive efficiency is high for liquid cold plate, and
And it is reliable and stable, just because of its numerous advantage in electronic component thermal control, become current electronic device thermal design
One research hotspot in field.Cold plate is a kind of single fluid heat exchanger, is made of substrate, fin and baffle, between fin in channel
Cooling fluid is passed to, electronic device (i.e. the heat source of cold plate) is then fixed on the substrate of one or both sides, and heat is by electronic device
It is transmitted to substrate and fin by thermally conductive, is then taken away by cooling fluid.Fin is mainly used to expand heat transfer area, reduces fluid
Thermal-boundary-leyer thickness reduces thermal resistance, and then improves heat conductive efficiency.The form of common liquid cooling cools down heating device at present
Specific method be: the heat of device is conducted to cold plate, exchanges heat by the working medium run in convection current and cold plate, then by working medium
Heat is taken away.
Cold plate thermal resistance is very important parameter in liquid cooling design, only accurately obtains cold plate thermal resistance, could preferably
It optimizes.The entire thermal resistance of device junction to cooling fluid consists of three parts, i.e. internal thermal resistance, external thermal resistance and system heat
Resistance.Internal thermal resistance refers to device heating area to the thermal resistance between device mounting surface；External thermal resistance refers to device mounting surface to substrate
Thermal contact resistance；System thermal resistance refers to the thermal resistance between substrate and cooling fluid.Liquid cold plate thermal resistance can reflect chip, welding
The sintering of layer and shell or bonding and other issues, heat resistance characteristic has vital shadow to the reliability of semiconductor devices
It rings.Therefore, the accuracy of thermo-resistance measurement is particularly significant, and associated Study on Test Method is also by attention.
Traditionally, the semiconductor devices of encapsulation be considered as the series resistances being made of compositions such as chip, solder, shells,
Thermal capacitance network, the crust thermal resistance of device are the sum of each composition thermal resistance on heat conduction path, and the transient prediction response curve of device is
Each composition thermal resistance, the coefficient result of thermal capacitance.The prior art generally determines thermal resistance by testing the temperature difference of cold plate two sides.Its
Test method is: heat source or array of heat sources being mounted on cold plate, heat source is made steadily to generate heat as far as possible, it is close to calculate its hot-fluid
Degree is measured the temperature difference of cold plate two sides below heat source using one group of thermocouple at this time, can be obtained with this temperature difference divided by heat flow density
To the thermal resistance value of cold plate.But conventional method has the following problems:
A) heat source is equipped with due to cold plate on one side, the temperature on the face vertical direction at the subpoint of cold plate is very
Hardly possible measurement；
B) method of traditional test thermal resistance is tested generally by the way of stable state, to make liquid cold plate under normal conditions
Heating reaches stable state, generally requires 1~2 hour.And generally require the special test heat source of customization, such as resistance or dedicated
Semiconductor, it is necessary to cold plate individually be disassembled test, the period is longer, and testing efficiency is low；
C) error: if the fixation position of 1, thermocouple not on theoretical fixed point, can generate large error due to distance；
2, the heat source that conventional method uses is generally resistance, if fever is uneven, also directly influences the measuring and calculating of hot road transmission range；3,
Since cold plate itself is three-dimensional heat transfer structure, the heat flow density in one-dimensional square is difficult to estimate, this will lead to
It is larger to the calculating error of heat flow density；4, due to calibration or instrument error, it will lead to the accumulated error of test macro.
To sum up, cold plate thermal resistance is measured using conventional method has that measurement is difficult and error is big, and due to cold plate
Be mounted in fine and close electronic equipment in most cases, the condition without installation conventional heat sources, thus conventional method
Cold plate is individually disassembled and is tested, and needs to introduce new method to measure.
Thermal transient tester T3Ster is a kind of transient state for measuring encapsulation semiconductor devices and other electronic equipments
The semiconductor apparatus of heat resistance test of thermal characteristics, basic function are that transformation by the test method of electricity and mathematically calculates knot
Structure function, directly measurement thermal resistance curve, isolate the thermal resistance of semiconductor.T3Ster can provide nondestructive Thermal test side
Method, test philosophy are: for general semiconductor devices, on-load voltage is always presented decline and becomes with the rising of junction temperature
Gesture.Moreover, for common diode (due between the PN junction of triode equally with the characteristic of diode, can also be with
It is common triode), generally in (25~125) DEG C this temperature range, present between on-load voltage and junction temperature such as Fig. 1 institute
The inverse proportion linear relationship shown, (in Fig. 1, the voltage temperature coefficient of straight line is known as k-factor).After obtaining k-factor, pass through first
Change the power input of electronic device；Changed later by the transient temperature that the hot relevant parameter of test equipment tests out electronic device
Curve；Numerical value processing is carried out to temperature variation curve, structure function is obtained by mathematic(al) manipulation；Heat is isolated from structure function
The thermal physical property parameters such as resistance and thermal capacitance.
Summary of the invention
The purpose of the present invention is place in view of the shortcomings of the prior art, provide it is a kind of convenient, flexible quick, without fixed
Test heat source processed and disassembly cold plate, thermo-resistance measurement is high-efficient, can be improved the transient electrical test liquid cooling of thermo-resistance measurement precision
The method of cold plate thermal resistance, to solve the problems, such as the thermal resistance measurement of the electronic equipment liquid cold plate of high heat flux density.
The present invention realizes a kind of method of electrical testing liquid cold plate transient thermal resistance of above-mentioned purpose, it is characterised in that including such as
Lower step:
Thermal transient tester T3Ster instrument is electrically connected computer, and semiconductor devices and its adapter are connected to T3Ster
It tests on the corresponding interface of host；Then in the test software of built-in computer T3Ster, according to semiconductor devices and cold plate
Characteristic, setting heating time, cooling time, heated current, test electric current and voltmeter range major parameter；It is opened using T3Ster
The test of beginning transient electrical obtains the cooling curve of tested semiconductor device and saves as test file；The quilt tested out before input
The coefficient value of the voltage temperature coefficient k of semiconductor device is surveyed, and saves file；Remove the noise in test curve；Calculate semiconductor
The differential structrue function of device is isolated cold plate thermal resistance, thermal contact resistance, device from multiple extreme points of differential structrue function and is dissipated
Hot device thermal resistance, the information of packaging thermal resistance and junction of semiconductor device thermal resistance；It is last bent according to the differential structrue function for being tested semiconductor
Curve is successively pressed R from right to left using the maximum point in curve as burble point by line1、R2、R3…RnIt is a different to be divided into n
Region, with the region R of the rightmost side1For represent immediate environment in entire heat-transfer path system last at thermal resistance value, by R1As
Liquid cold plate thermal resistance.
Present invention test method compared with the prior art, has the advantages that.
Without customizing test heat source.The present invention is not necessarily in addition to using T3Ster and common diode or triode
Additional customized or buying device, test period are short.Solving conventional method, to generally require the special test heat source of customization (dedicated
Resistance or dedicated semiconductor, such as customization and the matched thick-film resistor of cold plate etc.), test period longer problem.The present invention adopts
It is real without additional customized or buying device in addition to using common diode or triode with thermal transient tester T3Ster
It is short to test the preparatory period.It solves conventional method and generally requires the special test heat source of customization, such as resistance or dedicated semiconductor,
Preparatory period longer problem.
Thermo-resistance measurement is high-efficient.The present invention can generally complete test in several minutes, and at a terrific speed after progress
Reason, and then cold plate thermal resistance is isolated, accelerate thermo-resistance measurement speed.And product designer comparatively can easily carry out it is more
Secondary iteration tests directly shorten the design optimization period of electronic equipment.Liquid cold plate will be made by avoiding in conventional method
Heating reaches stable state under normal conditions, generally requires 1~2 hour (according to the regulation of MIL-STD-810D, by the temperature of test product
Until degree reaches balance, allow to be reached soaking time required for equalized temperature by according to the selection of its outer dimension by test product, it is tested
Product outer dimension is in 100mm, soaking time 1.5h), testing time longer problem.
Improve thermo-resistance measurement precision.The present invention can be accurately obtained semiconductor devices using structure function curve very much
Longitudinal thermal resistance is constituted, and provides extraordinary condition for device design and thermal characteristics test.According to the computational theory of T3Ster, test
Error essentially consist in the structure function in later period mathematical processes separation error, the error can control within ± 2% (due to
It can provide extremely accurate temperature measurement, use the measuring accuracy that can reach 0.01 DEG C when diode-transducer；Assuming that 50mV
Under the premise of temperature causes stepped voltage to change, sensitivity can arrive 2mV/ DEG C), the test far below conventional test methodologies misses
Difference directly enhances and improves thermo-resistance measurement precision.Therefore, product designer can get more accurate liquid cold plate thermal resistance number
According to the temperature of crucial heating device preferably being controlled, no matter for promoting main performance or the lifter service life of electronic equipment
There is more active influence.
Non-destructive testing.Semiconductor device chip temperature rise and thermal resistance the present invention is based on electric method longitudinally constitute analytical technology,
Point thermal resistance that can accurately measure in semiconductor devices heat-transfer path is constituted, and can nondestructively detect to be layered in the hot road of cold plate
The position of failure.This method has many advantages, such as that test speed is fast, harmless to cold plate and device architecture.
Detailed description of the invention
Fig. 1 is relation curve schematic diagram of the present invention about semiconductor devices on-load voltage and junction temperature.
Fig. 2 is output current curve schematic diagram of the present invention about constant-current source when testing.
Fig. 3 is the present invention about tested semiconductor devices on-load voltage versus time curve schematic diagram.
Fig. 4 is the present invention about the semiconductor devices cooling curve schematic diagram being extracted.
Fig. 5 is variations injunction temperature curve synoptic diagram of the present invention about semiconductor devices.
Fig. 6 is thermal resistance curve schematic diagram of the present invention about semiconductor devices.
Fig. 7 is differential structrue function curve schematic diagram of the present invention about semiconductor devices.
Fig. 8 is circuit connection diagram of the present invention about semiconductor devices.
Fig. 9 is the present invention about cold plate test semiconductor installation diagram.
Specific embodiment
- Fig. 9 refering to fig. 1.According to the present invention, the connected computer of thermal transient tester T3Ster instrument, by semiconductor devices
And its adapter is connected on the corresponding interface of T3Ster test host；Then in the test software of built-in computer T3Ster
In, according to semiconductor devices and cold plate characteristic, heating time, cooling time, heated current, test electric current and voltmeter amount are set
Journey major parameter；Start transient electrical using T3Ster to test, obtain the cooling curve of tested semiconductor device and saves as test
File；Voltage temperature coefficient (k-factor) value of the tested semiconductor device tested out before input, and save file；Remove test
Noise in curve；The differential structrue function for calculating semiconductor devices, is isolated from multiple extreme points of differential structrue function
Cold plate thermal resistance, thermal contact resistance, device radiator thermal resistance, the information of packaging thermal resistance and junction of semiconductor device thermal resistance；Finally according to quilt
Curve is successively pressed R from right to left using the maximum point in curve as burble point by the differential structrue function curve for surveying semiconductor1、
R2、R3…RnN different regions are divided into, with the region R of the rightmost side1To represent immediate environment in entire heat-transfer path system
Last at thermal resistance value, by R1As liquid cold plate thermal resistance.Can specifically following steps be used:
T3Ster connection computer is used first, carries out the test of voltage temperature coefficient (k-factor): in certain temperature section
Interior semiconductor on-load voltage of testing saves file with the relationship of semiconductor mounting surface temperature.Next, installing tested cold plate
With tested semiconductor devices, start thermo-resistance measurement.By built-in constant-current source, thermal transient tester T3Ster imposes measured device
The output current curve value changed as shown in Figure 2.High current in figure is heating current, it is therefore an objective to make semiconductor device heating；
Low current is test electric current, it is therefore an objective to make its both ends on-load voltage by applying constant current to it, which will not make
There is fuel factor in tested semiconductor devices.Then, T3Ster instrument will record load as shown in Figure 3 at semiconductor devices both ends
The curve that changes over time of voltage.When test starts, junction temperature T0, the low current (test electric current) of load can be in semiconductor device
Part both ends apply test steady state voltage VF,sense,0；Once high current (heated current) is opened, then semiconductor devices both end voltage meeting
It flies up to heating initial voltage VF,drive,1, as experiment carries out, high current can make the junction temperature of device be gradually increasing, and pass through
After crossing heating time t, each structure sheaf in hot-fluid approach reaches thermal equilibrium state, and junction temperature rises to T at this time1, load in semiconductor
The voltage at device both ends gradually can slightly decline, until semiconductor devices junction temperature is kept constant, on-load voltage at this time is heating
Steady state voltage VF,drive,0；When heating finishes, T3Ster instrument can cut off heated current, impose again test electric current to device into
Row test.When just switching to test electric current, since semiconductor device temperature is higher, before on-load voltage at this time is slightly below
Voltage when low current is loaded, voltage at this time is test medium voltage VF,sense,1.As semiconductor devices gradually cools down, add
Original test steady state voltage V can be gradually returned to by carrying voltageF,sense,0Level, measured device forward voltage in the case where testing electric current
VF,sense(t) versus time curve, referred to as cooling response curve (abbreviation cooling curve).Thermal transient tester T3Ster will
It extracts the continuous mathematic(al) manipulation of this section of cooling curve (being also possible to heating curves sometimes) progress out, and obtains test result, become
It is as follows to change mode:
Thermal transient tester T3Ster is according to the cooling curve for extracting semiconductor devices as shown in Figure 4, by taking-up
The ordinate of cooling curve, is converted using k-factor as denominator, obtains the variations injunction temperature of semiconductor devices as shown in Figure 5
Curve.Thermal transient tester T3Ster carries out the variations injunction temperature curve in Fig. 5 using semiconductor devices power as denominator again
Transformation, can obtain the thermal resistance curve of semiconductor devices as shown in FIG. 6, and abscissa is timeconstantτ=RC in figure, and R is thermal resistance,
C is thermal capacitance, and ordinate is thermal resistance.
Thermal transient tester T3Ster is according to the transverse and longitudinal coordinate of thermal resistance curve in obtained thermal resistance curve interchange graph 6, and again
Secondary carry out mathematic(al) manipulation, can obtain differential structrue function curve as shown in Figure 7, and in figure, abscissa is thermal resistance, and ordinate is thermal capacitance C
To the differential of thermal resistance R.As can see from Figure 7, the differential structrue function curve of semiconductor devices generally has multiple maximum
Point, in multiple maximum points, the distance between every two maximum point is a certain layer in the semiconductor devices heat-transfer path
Thermal resistance.
Embodiment 1
Since the transistor of SOT-93 encapsulation, such as triode can satisfy the test encapsulation requirement of T3Ster, therefore can
To use the triode of SOT-93 encapsulation as tested semiconductor devices, and carry out following steps:
Refering to fig. 1.First, it measures the k-factor of triode: the triode and its adapter is connected to thermal transient tester
T3Ster is tested on the corresponding interface of host；Then triode merging T3Ster is carried in thermostat, and keeps well connecing
Touching；Then in the T3Ster test software of built-in computer, according to the dynatron performance, test temperature section is set；It is giving
Determine to carry out k-factor test in temperature range and saves test result；
Refering to Fig. 8.Second, according to semiconductor device circuit connection figure as shown in Figure 8, by the triode and its adapter
It is connected on the corresponding interface of T3Ster test host；
Refering to Fig. 9.Third tests semiconductor installation diagram according to cold plate, triode 1 is bonded in liquid cooling using conductive silver paste
On cold plate 2, connection entrance liquid cooling connector 3 and outlet liquid cooling connector 4.Cold plate 2 is connected in liquid cooling system, by triode 1 with
Thermal transient tester T3Ster is connected, and T3Ster is connected with computer；
4th, it is powered on liquid cooling piping connection cold plate and transfer tube, and to transfer tube, works normally liquid cooling system；
5th, according to triode and cold plate characteristic, heating time, cooling time, heated current, test electric current and electricity are set
The major parameters such as meter-pressing amount journey；
6th, start to measure, when measuring the thermal resistance of triode, obtains three pole using the experimental method of heating-cooling
The cooling curve of pipe, and save result；
7th, it carries out data analysis: a) using the mathematical way of square root fitting built in T3Ster analysis software, removing cold
But the front end noise of curve, b) according to cooling curve, mathematic(al) manipulation is carried out, the differential structrue letter of the triode heat-transfer path is calculated
Number, c) thermal resistance section different in the differential structrue function curve is separated, separation method is as follows: 1) finding differential as shown in Figure 7
Maximum point in structure function curve, 2) differential structrue function is successively divided into n difference according to extreme point from right to left
Region, 3) with the region R of the region rightmost side1Represent the thermal resistance value of tested liquid cold plate.
Claims (8)
1. a kind of method of electrical testing liquid cold plate transient thermal resistance, it is characterised in that include the following steps:
Thermal transient tester T3Ster instrument is electrically connected computer, and semiconductor devices and its adapter are connected to T3Ster test
On the corresponding interface of host；Then in the test software of built-in computer T3Ster, according to semiconductor devices and cold plate characteristic,
Heating time, cooling time, heated current, test electric current and voltmeter range major parameter are set；Thermal transient tester
T3Ster is according to the cooling curve of the semiconductor devices extracted, by the ordinate of the cooling curve of taking-up, using k-factor as point
Mother converts, and the variations injunction temperature curve of semiconductor devices is obtained, and according to variations injunction temperature curve, with semiconductor devices power work
It is converted again for denominator, acquisition abscissa is time constant, ordinate is thermal resistance, and R is thermal resistance, and C is thermal capacitance
Semiconductor devices thermal resistance curve, then according to obtain thermal resistance curve exchange thermal resistance curve transverse and longitudinal coordinate, and again into
Row mathematic(al) manipulation obtains differential structrue function curve；In transient electrical test, thermal transient tester T3Ster is obtained to be tested and partly be led
The cooling curve of body device simultaneously saves as test file；The voltage temperature coefficient k's of the tested semiconductor device tested out before input
Coefficient value, and save file；Remove the noise in test curve, the differential structrue function for partly leading device is calculated, from differential structrue
Cold plate thermal resistance, thermal contact resistance, device radiator thermal resistance, packaging thermal resistance and semiconductor devices are isolated in multiple extreme points of function
Tie the information of thermal resistance；The thermal resistance numerical value of tested liquid cold plate is finally obtained according to separating resulting.
2. the method for electrical testing liquid cold plate transient thermal resistance as described in claim 1, it is characterised in that: in separation test solution
When the thermal resistance numerical value of cold plate, tester is according to the differential structrue function curve of semiconductor devices, with the maximum point in curve
For burble point, curve is successively pressed into R from right to left1、R2、…、RnN different regions are divided into, with the region rightmost side
Region R1For represent immediate environment in entire heat-transfer path system last at thermal resistance value, by R1As liquid cold plate thermal resistance.
3. the method for electrical testing liquid cold plate transient thermal resistance as claimed in claim 2, it is characterised in that: when test, transient state
Thermal test instrument imposes the current value of the output current curve of variation to measured device, then record load is half by constant-current source
The curve that the voltage at conductor device both ends changes over time.
4. the method for electrical testing liquid cold plate transient thermal resistance as claimed in claim 3, it is characterised in that: when test starts,
Apply test steady state voltage V at semiconductor devices both ends by the test electric current of semiconductor devicesF,sense,0；Once heated current
It opens, then semiconductor devices both end voltage rises to heating initial voltage VF,drive,1；As experiment carries out, heated current makes
The junction temperature of device is gradually increasing, and is loaded the voltage at semiconductor devices both ends and is gradually reduced, until semiconductor devices junction temperature is kept
Constant, on-load voltage at this time is heating steady state voltage VF,drive,0；When heating finishes, thermal transient tester T3Ster instrument is cut
Disconnected heated current imposes test electric current again and tests device, when on-load voltage at this time is lower than loading current before
Voltage is test medium voltage VF,sense,1；Later, as semiconductor devices gradually cools down, on-load voltage is gradually returned to originally
Test steady state voltage VF,sense,0Level, this section of curve be known as the cooling response curve of the semiconductor devices；Thermal transient tester
T3Ster will extract this section of cooling curve out and carry out continuous mathematic(al) manipulation, and obtain test result, wherein heated current is greater than
Electric current is tested, and test electric current to cause the fuel factor of tested semiconductor devices.
5. the method for electrical testing liquid cold plate transient thermal resistance as described in claim 1, it is characterised in that: in measurement tested half
When conductor device, is first picked using T3Ster connection receipts, measure the voltage temperature coefficient k of transistor, in the k-factor of measurement transistor
In, tested transistor and its adapter are connected on the corresponding interface of thermal transient tester T3Ster test host；Then
Tested transistor merging T3Ster is carried in thermostat, and keeps good contact；Then it is tested in the T3Ster of built-in computer
In software, the featured configuration test temperature section of transistor is tested according to this；K-factor test is carried out in given temperature section simultaneously
Save test result；Transistor and its adapter are connected to T3Ster by the semiconductor device circuit connection figure further according to shown in
It tests on the corresponding interface of host.
6. the method for electrical testing liquid cold plate transient thermal resistance as claimed in claim 5, it is characterised in that: tested according to cold plate
Transistor is bonded on liquid cold plate (2) by semiconductor installation diagram using conductive silver paste, is connected entrance liquid cooling connector (3) and is gone out
Cold plate 2 is connected in liquid cooling system by oral fluid cold junction (4), and transistor is connected with thermal transient tester T3Ster, is electrically connected
Computer, T3Ster cold plate, transfer tube and liquid cooling pipeline are connect, and works normally liquid cooling system；According to transistor and cold plate
Characteristic, in the test software of built-in computer T3Ster be arranged heating time, cooling time, heated current, test electric current and
Voltmeter measuring range parameters measure the voltage temperature coefficient k of transistor.
7. the method for electrical testing liquid cold plate transient thermal resistance as claimed in claim 6, it is characterised in that: in measurement transistor
Thermal resistance when, obtain the cooling curve of the transistor using the experimental method of heating-cooling, and save result；Then it uses
Following step carries out data analysis, a) using the mathematical way of square root fitting built in T3Ster analysis software, removes cooling song
The front end noise of line, b) calculate structure function, c) thermal resistance section different in separated structure function curve.
8. the method for electrical testing liquid cold plate transient thermal resistance as claimed in claim 7, it is characterised in that: according to separated structure
Function curve finds the maximum point in differential structrue function curve, from the right-to-left of the curve successively by differential structrue function
N different regions are divided into according to extreme point, with the region R of the region rightmost side1Represent the thermal resistance of tested liquid cold plate
Value.
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