CN104313538B - Evaporated device and evaporation coating method - Google Patents
Evaporated device and evaporation coating method Download PDFInfo
- Publication number
- CN104313538B CN104313538B CN201410659080.1A CN201410659080A CN104313538B CN 104313538 B CN104313538 B CN 104313538B CN 201410659080 A CN201410659080 A CN 201410659080A CN 104313538 B CN104313538 B CN 104313538B
- Authority
- CN
- China
- Prior art keywords
- vapor deposition
- evaporation source
- evaporation
- substrate
- coating method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000001704 evaporation Methods 0.000 title claims abstract description 95
- 230000008020 evaporation Effects 0.000 title claims abstract description 92
- 238000000576 coating method Methods 0.000 title claims abstract description 22
- 238000007740 vapor deposition Methods 0.000 claims abstract description 67
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 239000011261 inert gas Substances 0.000 claims abstract description 24
- 239000000126 substance Substances 0.000 claims abstract description 14
- 239000011368 organic material Substances 0.000 claims description 31
- 230000005684 electric field Effects 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 5
- 238000007738 vacuum evaporation Methods 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 16
- 229910001111 Fine metal Inorganic materials 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 8
- 230000009471 action Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000002309 gasification Methods 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present invention provides a kind of evaporated device and evaporation coating methods, belong to vacuum evaporation technology field.Wherein, which includes the evaporation source that chamber is deposited and is set in the vapor deposition chamber, the vapor deposition base station for placing substrate to be deposited is additionally provided in the vapor deposition chamber, towards the vapor deposition base station, the evaporated device further includes the opening of the evaporation source：Cathode in the evaporation source is set；Anode in the vapor deposition base station side is set；Inert gas for inputting from inert gas to the vapor deposition intracavitary provides device.Technical scheme of the present invention can improve the utilization rate of substance to be filmed during vapor deposition.
Description
Technical field
The present invention relates to vacuum evaporation technology field, a kind of evaporated device and evaporation coating method are particularly related to.
Background technology
OLED (Organic Light Emitting Diode, Organic Light Emitting Diode) display device is due to spontaneous
Light, without backlight module, contrast and clarity are high, visual angle is wide, all solidstate, be suitable for flexibility panel, good temp characteristic,
Low-power consumption, fast response time and a series of excellent specific properties such as manufacturing cost is low, have become flat display apparatus of new generation
One of prior development direction, therefore be increasingly subject to more and more pay close attention to.
In the prior art, the basic structure of OLED display device includes anode layer, functional film layer and cathode layer etc.；It is above-mentioned
Functional film layer includes：Hole transmission layer, organic luminous layer and electron transfer layer etc.；Wherein, the film build method of organic luminous layer
There are many kinds of, including evaporation film-forming method, molecular beam epitaxy, organic chemical vapor deposition method and sol-gel method etc.；Its
In, evaporation film-forming method due to being easy to control with easy to operate, film thickness, it is small to the pollution of film and be easily achieved doping etc. it is excellent
Point, the prior art mainly adopts the organic functions film layers such as evaporation film-forming method formation organic luminous layer that is, under vacuum conditions will have
The heating of machine material makes it evaporate (distillation), and deposits in target base plate and form corresponding functional film layer.
As shown in Figure 1, existing vacuum evaporation equipment includes vapor deposition chamber 3, it is deposited in chamber 3 and is provided with evaporation source 4 and substrate
1, substrate 1 is located at the surface of evaporation source 4, is deposited on 3 wall of chamber and is provided with vacuum pumping hole 2, vacuum pumping hole 2 is connected to vapor deposition
Vacuum pump outside chamber 3, during vacuum evaporation, evaporation source 4 makes gasification to the organic material molecule of the evaporation gasification of substrate 1
Organic material molecule fly on substrate 1 and form a film, arrow direction indicates the flow direction of organic material molecule in figure.However, having
The flow direction of machine material molecule is isotropic, and organic material has a large amount of organic material while being deposited on substrate 1
Material has been evaporated on 3 wall of vapor deposition chamber so that a large amount of organic materials are wasted, and cause the utilization rate of organic material very low.
Invention content
The technical problem to be solved in the present invention is to provide a kind of evaporated device and evaporation coating method, during capable of improving vapor deposition
The utilization rate of substance to be filmed.
In order to solve the above technical problems, the embodiment of the present invention offer technical solution is as follows：
On the one hand, a kind of evaporated device, including vapor deposition chamber and the evaporation source being set in the vapor deposition chamber, the steaming are provided
It is additionally provided with vapor deposition base station for placing substrate to be deposited in plating chamber, the opening of the evaporation source is towards the vapor deposition base
Platform, the evaporated device further include：
Cathode in the evaporation source is set；
Anode in the vapor deposition base station side is set；
Inert gas for inputting from inert gas to the vapor deposition intracavitary provides device.
Preferably, the material of the cathode uses Mo.
Preferably, the evaporation source is cuboid, and the cathode is arranged in four sides of the evaporation source.
Preferably, the vapor deposition base station is between the anode and the evaporation source.
Preferably, the evaporated device further includes the magnetic for being placed on substrate side opposite with the evaporation source
Plate is provided with the anode on the magnetic sheet.
Preferably, the evaporated device further includes the metal for being placed on the substrate and the evaporation source opposite side
Mask plate.
Preferably, the metal mask plate is connect with the anode by conducting wire.
The embodiment of the present invention additionally provides a kind of evaporation coating method, is applied to above-mentioned evaporated device, the evaporation coating method packet
It includes：
The vapor deposition chamber is evacuated to high vacuum state, and defeated to the vapor deposition intracavitary using inert gas offer device
Enter inert gas；
Substrate to be deposited is sent to the vapor deposition intracavitary；
High-frequency electric field is generated between the anode and the cathode so that the ionized inert gas generates inert gas
Ion and electronics；
The evaporation source is heated, the substance to be filmed evaporated can adsorb the electronics and be moved to the anode
It is dynamic, form film in the substrate surface.
Preferably, described substrate to be deposited is sent to after the vapor deposition intracavitary further includes：
The substrate is aligned, the substrate is made to be located on the vapor deposition base station.
Preferably, the evaporation source is organic material evaporating source, and carrying out heating to the evaporation source includes：
The evaporation source is heated to 400~500 degree.
The embodiment of the present invention has the advantages that：
In said program, evaporated device includes the evaporation source that chamber is deposited and is set in vapor deposition chamber, in evaporation source setting
Have cathode, the vapor deposition base station side for placing substrate to be deposited be provided with anode, when being deposited, anode and cathode it
Between generate high-frequency electric field so that the ionized inert gas that intracavitary is deposited generates inert gas ion and electronics, electronics and is evaporated source
The substance to be filmed absorption evaporated, substance to be filmed is dynamic by the electric field action Ghandler motion that faces south, and is confined to substrate surface deposition shape
At film, the loss of substance to be filmed is thus greatly reduced, improves the utilization rate of substance to be filmed.
Description of the drawings
Fig. 1 is the structural schematic diagram of existing vacuum evaporation equipment；
Fig. 2 is schematic diagram of the prior art when being deposited；
Fig. 3 is the structural schematic diagram in evaporated device of the embodiment of the present invention；
Fig. 4 is the schematic diagram when specific embodiment of the invention is deposited.
Reference numeral
4 evaporation source of chamber is deposited in 1 substrate, 2 vacuum pumping hole 3
5 fine metal mask plate, 6 organic material molecule, 7 magnetic sheet, 8 cathode
9 anode, 10 Ar ions, 11 electronics
Specific implementation mode
To keep the embodiment of the present invention technical problems to be solved, technical solution and advantage clearer, below in conjunction with
Drawings and the specific embodiments are described in detail.
The embodiment of the present invention is in the prior art when being deposited, the very low problem of the utilization rate of organic material,
A kind of evaporated device and evaporation coating method are provided, the utilization rate of substance to be filmed during vapor deposition can be improved.
An embodiment of the present invention provides a kind of evaporated devices, including the evaporation that chamber is deposited and is set in the vapor deposition chamber
Source, is additionally provided with vapor deposition base station for placing substrate to be deposited in the vapor deposition chamber, and the opening of the evaporation source is towards institute
Vapor deposition base station is stated, the evaporated device further includes：
Cathode in the evaporation source is set；
Anode in the vapor deposition base station side is set；
Inert gas for inputting from inert gas to the vapor deposition intracavitary provides device.
The evaporated device of the present invention includes the evaporation source that chamber is deposited and is set in vapor deposition chamber, and evaporation source is provided with the moon
Pole is provided with anode in the vapor deposition base station side for placing substrate to be deposited, when being deposited, is produced between anode and cathode
Raw high-frequency electric field so that the ionized inert gas that intracavitary is deposited generates inert gas ion and electronics, and electronics is evaporated source evaporation
The substance to be filmed absorption gone out, substance to be filmed is dynamic by the electric field action Ghandler motion that faces south, be confined to substrate surface deposit to be formed it is thin
Film thus greatly reduces the loss of substance to be filmed, improves the utilization rate of substance to be filmed.
The material for making cathode needs to have the performances such as high temperature resistant, stabilization, and specifically, Mo may be used in the material of cathode.
Specifically, the evaporation source can be cuboid, and the cathode is arranged in four sides of the evaporation source.
Further, the vapor deposition base station is between the anode and the evaporation source.
Further, the evaporated device further includes the magnetic for being placed on substrate side opposite with the evaporation source
Plate is provided with the anode on the magnetic sheet.
Further, the evaporated device further includes the gold for being placed on the substrate and the evaporation source opposite side
Belong to mask plate.
Further, the metal mask plate is connect with the anode by conducting wire, can will be deposited in this way substrate and
In charge-conduction to anode on metal mask plate, avoid thering is charge accumulation to generate reversed electric field on substrate.
The embodiment of the present invention additionally provides a kind of evaporation coating method, is applied to above-mentioned evaporated device, the evaporation coating method packet
It includes：
The vapor deposition chamber is evacuated to high vacuum state, and defeated to the vapor deposition intracavitary using inert gas offer device
Enter inert gas；
Substrate to be deposited is sent to the vapor deposition intracavitary；
High-frequency electric field is generated between the anode and the cathode so that the ionized inert gas generates inert gas
Ion and electronics；
The evaporation source is heated, the substance to be filmed evaporated can adsorb the electronics and be moved to the anode
It is dynamic, form film in the substrate surface.
Further, described substrate to be deposited is sent to after the vapor deposition intracavitary further includes：
The substrate is aligned, the substrate is made to be located on the vapor deposition base station.
Further, the evaporation source is organic material evaporating source, and carrying out heating to the evaporation source includes：
The evaporation source is heated to 400~500 degree.
Below in conjunction with the accompanying drawings and specific embodiment describes to the evaporated device and evaporation coating method of the present invention in detail：
As shown in Fig. 2, the prior art is when forming the functional film layer of OLED device, it is to be placed on substrate 1 to be deposited
It is deposited on base station, the side of substrate 1 towards evaporation source 4 is placed with fine metal mask plate 5, and substrate 1 deviates from the side of evaporation source 4
It is placed with magnetic sheet 7, magnetic sheet 7 can prevent fine metal mask plate 5 sagging and make deposition figure deformation.In vapor deposition, heating
The organic material molecule of evaporation source 4, gasification is diffused, and is formed a film on substrate 1, but the flow direction of organic material molecule
It is isotropic, organic material has a large amount of organic material to be evaporated to 3 wall of vapor deposition chamber while being deposited on substrate 1
On so that a large amount of organic materials are wasted, and cause the utilization rate of organic material very low.
To solve the above-mentioned problems, a kind of evaporated device and evaporation coating method are present embodiments provided, can be used for making
The functional film layer of OLED display device.The evaporated device includes the evaporation source that chamber is deposited and is set in vapor deposition chamber, and evaporation source can
Think crucible or evaporation boat, the vapor deposition base station being additionally provided in chamber for placing substrate to be deposited, the opening of evaporation source is deposited
Towards vapor deposition base station, as shown in Figure 3 and Figure 4, evaporated device further includes：Indifferent gas for inputting from inert gas to vapor deposition intracavitary
Body provides device (not shown)；Cathode 8 in 4 side of evaporation source is set, and evaporation source 4 is linear evaporation source, and cathode 8 can be arranged
Four sides of evaporation source 4, cathode 8 are made of metal, Mo specifically may be used and be made；Anode in vapor deposition base station side is set
9, anode 9 is made of metal.
As shown in figure 4, after substrate 1 to be deposited enters vapor deposition chamber, substrate 1 is set gradually away from the side of evaporation source 4
There are magnetic sheet 7 and anode 9, the side of substrate 1 towards evaporation source 4 to be provided with fine metal mask plate 5, fine metal mask plate 5 is logical
Conducting wire is crossed to connect with anode 9.
The evaporation coating method of the present embodiment includes the following steps：
Step 11：It is 5.0*10 that vapor deposition chamber, which is evacuated to air pressure,-5After high vacuum state below, inertia is passed through to vapor deposition intracavitary
Gas specifically can be passed through Ar gas；
Step 12：Substrate 1 is sent to vapor deposition intracavitary by preloaded cavity, then by alignment system to 1 institute of substrate
Place position is aligned, and so that substrate 1 is located on vapor deposition base station, is ready for being deposited；
Step 13：High-frequency electric field is generated between anode 9 and cathode 8, high-frequency electric field makes Ar pneumoelectrics from generation Ar ions
10 and electronics 11.By adjusting the size of electric field, the plasma of different capacity can be obtained, the power of plasma is by electric field
Intensity and current density determine that specifically, the power of the present embodiment plasma is 200W/m2~1000W/m2.Ar ions 10
It is moved to cathode 8 under electric field action, electronics 11 is constantly moved to anode 9 under electric field action.When Ar ions 10 reach cathode 8
It is combined afterwards with the electronics of cathode 8, regenerates Ar gas and return to vapor deposition cavity circulation use；
Step 14：Evaporation source 4 is heated, the temperature of heating is generally 400~500 degree, and the organic material in evaporation source 4 is logical
It crosses melting evaporation and distillation two ways forms vapor of organic material.The valve of evaporation source 4 is opened, organic material starts to be deposited,
For vapor of organic material during rising, organic material molecule 6 can adsorb electronics 11 so that and organic material molecule 6 charges,
It is moved to anode 9 under the action of electric field, vapor deposition at this time is deposited for anisotropy.According to the direction of electric field, organic material molecule 6
1 surface of substrate is reached, organic material film is formed.
Anode 9 is connected with fine metal mask plate 5 by conducting wire by charge accumulation on substrate 1 in order to prevent, the present embodiment,
Because organic material can be deposited simultaneously on substrate 1 on fine metal mask plate 5, therefore charge can be by organic on substrate 1
Material is transmitted on fine metal mask plate 5, is ultimately conducted on anode 9, avoids having charge accumulation to generate reversed electricity on substrate 1
.
Step 15：4 shuttle-scanning of linear evaporation source is primary, completes vapor deposition.
The organic material molecule of the present embodiment is dynamic by the electric field action Ghandler motion that faces south, and is confined to substrate surface deposition and is formed with
Machine material film avoids a large amount of organic material from being evaporated on vapor deposition chamber baffle, improves the utilization rate of organic material, reduces
The organic material consuming cost of unit substrate.
The above is the preferred embodiment of the present invention, it is noted that for those skilled in the art
For, without departing from the principles of the present invention, it can also make several improvements and retouch, these improvements and modifications
It should be regarded as protection scope of the present invention.
Claims (8)
1. a kind of evaporation coating method is applied to evaporated device, which is characterized in that the evaporated device, including chamber is deposited and is set to
Evaporation source in the vapor deposition chamber is additionally provided with vapor deposition base station for placing substrate to be deposited in the vapor deposition chamber, described
The opening of evaporation source further includes towards the vapor deposition base station, the evaporated device：Cathode in the evaporation source, setting are set
Anode in the vapor deposition base station side, the inert gas for inputting inert gas to the vapor deposition intracavitary provides device, described
Base station is deposited between the anode and the evaporation source, the evaporation coating method includes：
The vapor deposition chamber is evacuated to high vacuum state, and lazy to vapor deposition intracavitary input using inert gas offer device
Property gas；
Substrate to be deposited is sent to the vapor deposition intracavitary；
High-frequency electric field is generated between the anode and the cathode so that the ionized inert gas generates inert gas ion
And electronics；
The evaporation source is heated, the substance to be filmed evaporated can adsorb the electronics and be moved to the anode,
The substrate surface forms film.
2. evaporation coating method according to claim 1, which is characterized in that described that substrate to be deposited is sent to the vapor deposition
Further include after intracavitary：
The substrate is aligned, the substrate is made to be located on the vapor deposition base station.
3. evaporation coating method according to claim 1, which is characterized in that the evaporation source is organic material evaporating source, to institute
It states evaporation source and heat and include：
The evaporation source is heated to 400~500 degree.
4. evaporation coating method according to claim 1, which is characterized in that the material of the cathode uses Mo.
5. evaporation coating method according to claim 1, which is characterized in that the evaporation source is cuboid, the cathode setting
In four sides of the evaporation source.
6. evaporation coating method according to claim 1, which is characterized in that the evaporated device further includes described for being placed on
The magnetic sheet of substrate side opposite with the evaporation source is provided with the anode on the magnetic sheet.
7. evaporation coating method according to claim 1, which is characterized in that the evaporated device further includes described for being placed on
The metal mask plate of substrate and the evaporation source opposite side.
8. evaporation coating method according to claim 7, which is characterized in that the metal mask plate passes through conducting wire with the anode
Connection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410659080.1A CN104313538B (en) | 2014-11-18 | 2014-11-18 | Evaporated device and evaporation coating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410659080.1A CN104313538B (en) | 2014-11-18 | 2014-11-18 | Evaporated device and evaporation coating method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104313538A CN104313538A (en) | 2015-01-28 |
| CN104313538B true CN104313538B (en) | 2018-09-21 |
Family
ID=52368843
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410659080.1A Expired - Fee Related CN104313538B (en) | 2014-11-18 | 2014-11-18 | Evaporated device and evaporation coating method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104313538B (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107017343B (en) * | 2016-01-27 | 2019-04-02 | 周卓辉 | The production method of the organic layer of organic illuminating element |
| CN106148893B (en) * | 2016-08-11 | 2019-04-05 | 京东方科技集团股份有限公司 | A kind of evaporation coating device and evaporation coating method, substrate |
| CN108657819B (en) * | 2017-03-31 | 2019-10-01 | 京东方科技集团股份有限公司 | Transmission device, transfer approach and vacuum deposition apparatus |
| US10541386B2 (en) * | 2018-01-30 | 2020-01-21 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Evaporation deposition equipment and evaporation deposition method |
| CN108300962A (en) * | 2018-01-30 | 2018-07-20 | 武汉华星光电半导体显示技术有限公司 | Evaporated device and evaporation coating method |
| CN110137366B (en) * | 2018-06-22 | 2021-12-07 | 友达光电股份有限公司 | Light emitting element and method for manufacturing the same |
| CN109652761B (en) * | 2019-01-30 | 2021-01-26 | 惠科股份有限公司 | Film coating method and film coating device |
| CN110344002B (en) * | 2019-06-11 | 2022-03-22 | 惠科股份有限公司 | Evaporation device and evaporation method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1605652A (en) * | 2004-09-09 | 2005-04-13 | 复旦大学 | Vacuum thermal evaporation film-forming method using strong electric field |
| CN101045988A (en) * | 2006-03-30 | 2007-10-03 | 甘国工 | Production apparatus for surface modification of metal plate and band |
| CN203034085U (en) * | 2012-12-24 | 2013-07-03 | 羽田电子科技(太仓)有限公司 | Improved evaporation coating machine |
-
2014
- 2014-11-18 CN CN201410659080.1A patent/CN104313538B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1605652A (en) * | 2004-09-09 | 2005-04-13 | 复旦大学 | Vacuum thermal evaporation film-forming method using strong electric field |
| CN101045988A (en) * | 2006-03-30 | 2007-10-03 | 甘国工 | Production apparatus for surface modification of metal plate and band |
| CN203034085U (en) * | 2012-12-24 | 2013-07-03 | 羽田电子科技(太仓)有限公司 | Improved evaporation coating machine |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104313538A (en) | 2015-01-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104313538B (en) | Evaporated device and evaporation coating method | |
| CN101910449B (en) | Method and apparatus for forming transparent conductive film | |
| CN102482763B (en) | Method for manufacturing thin film | |
| CN105821378B (en) | A kind of niobium doping stannic oxide transparent conductive film and preparation method thereof | |
| CN1854332A (en) | Multiple vacuum evaporation coating device and method for controlling the same | |
| CN100594255C (en) | Method and device for preparing rare earth doped gallium nitride light-emitting film | |
| KR20120049554A (en) | Rotating cylindrical facing target sputtering system | |
| CN106148893B (en) | A kind of evaporation coating device and evaporation coating method, substrate | |
| CN100516285C (en) | Electron beam heating evaporation method as well as device and uses thereof | |
| WO2015006034A1 (en) | Scalable triode pecvd source and system devices | |
| KR101239575B1 (en) | Apparatus for forming gas barrier and method for forming thereof | |
| US20120090546A1 (en) | Source supplying unit, method for supplying source, and thin film depositing apparatus | |
| CN102703867A (en) | Electron bombardment coating machine | |
| CN202482419U (en) | Baseplate coating equipemnt | |
| CN101509122B (en) | Process for producing microwave plasma of cuprous iodide semi-conducting film | |
| KR101578268B1 (en) | Electrode element comprising control-layer of work function | |
| CN209957884U (en) | Crucible device of plane evaporation | |
| CN106119795A (en) | Utilize the method that vacuum magnetron sputtering coating film technology prepares lithium battery C Si negative pole coating | |
| CN203582960U (en) | Magnetron sputtering device for preparing AZO transparent conductive film | |
| CN103590011B (en) | A kind of magnetron sputtering prepares the device and method of AZO nesa coating | |
| CN105932177A (en) | Organic electroluminescent device, light-emitting layer material, doping method, and preparation method | |
| CN112877662B (en) | Magnetron sputtering equipment | |
| JP2015117429A (en) | Vapor deposition device and production method of organic el device | |
| Lee et al. | Development of plasma assisted thermal vapor deposition technique for high-quality thin film | |
| JP5557700B2 (en) | Vapor deposition apparatus and organic EL device manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180921 |