CN104178750A - Suspension-type heating system - Google Patents
Suspension-type heating system Download PDFInfo
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- CN104178750A CN104178750A CN201310189320.1A CN201310189320A CN104178750A CN 104178750 A CN104178750 A CN 104178750A CN 201310189320 A CN201310189320 A CN 201310189320A CN 104178750 A CN104178750 A CN 104178750A
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- CN
- China
- Prior art keywords
- heating
- film
- suspension
- heating system
- substrate
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- Pending
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 72
- 239000000463 material Substances 0.000 claims abstract description 18
- 239000010408 film Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 14
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 9
- 239000000725 suspension Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 238000009434 installation Methods 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 238000000429 assembly Methods 0.000 claims description 2
- 230000000712 assembly Effects 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 3
- 239000010948 rhodium Substances 0.000 claims 3
- 239000011651 chromium Substances 0.000 claims 2
- 239000010931 gold Substances 0.000 claims 2
- 239000011777 magnesium Substances 0.000 claims 2
- 239000011572 manganese Substances 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 239000004411 aluminium Substances 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 229910052749 magnesium Inorganic materials 0.000 claims 1
- 229910052748 manganese Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012264 purified product Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
The invention belongs to the technical field of high-purity material heating treatment and relates to a heating system especially suitable for film growth. The invention provides a heating system or analogous device for suspension-type heating of a sample. The system has the characteristics of high heating temperature, heating uniformity and high film uniformity and film quality. The heating system mainly comprises a heating part, a heat insulation part and a suspension-type clamping part. The heating system can be used for suspension-type heating, can maximumly release deformation caused by high-temperature expansion and is conducive to high-quality film material growth.
Description
Technical field
The present invention relates to high purity material heat treated chamber, be particularly useful for substrate heated chamber and the allied equipment of film growth.
Background technology
Modern science and Technology Need are used New Inorganic Materials or the thin-film material of a large amount of Various Functions, and these functional materialss must be high-purity, or the dopant material that some kinds impurity forms wittingly in high-purity material.In order to obtain these highly purified products, technique circle has also been invented a lot of preparation methods.Wherein, chemical vapor deposition (CVD) is the new technology of preparing high purity material growing up nearly decades.Chemical Vapor deposition process requires substrate to possess certain temperature mostly, and the preparation of part material even requires underlayer temperature to reach more than 800 °.Therefore heated chamber becomes an important composition composition in this kind equipment.
At present, in reactor, type of heating can be divided into following four classes:
1. thermal resistance wire type of heating
2. radio frequency (RF) induction heating mode
3. plasma strengthens (Plasma) type of heating
4. luminous energy type of heating
Wherein, radio-frequency induction type of heating is introduced thermal source at reactor Inner Installed infrared rays, ultraviolet ray heating fluorescent tube, to only can heat the carrier of substrate or substrate, and can not heat the furnace wall of reaction chamber, this type of design is called " cold wall reactor " (cold-wall reactors).Yet, in the system of cold wall reactor of some, still can there is the heated situation in furnace wall, so just must reduce or avoid reaction or deposit film on furnace wall by the mode of cooled furnace wall (passing into cooling circulating water).The geometrical shape of reaction boiler tube strictly limits work by reaction pressure and thermal source method of supplying, becomes an important factor that affects output.When plasma strengthens type of heating again due to its plated film, the problem of thermostability cannot be produced in a large number.Although luminous energy type of heating carries out deposit film at extremely low temperature, it is also subject to the next low density of the Tapes of low temperature depositing film institute and the puzzlement of molecular contamination.
So the CVD type of heating of main flow is still thermal resistance wire type of heating at present.Thermal resistance wire heating be a kind of in reaction chamber the strong and higher type of heating of cost performance of controllability.In actual use, thermal resistance wire mainly adopts the mode of three district's heating hot-plates, and the temperature homogeneity of hot-plate is subject to certain restrictions, and then causes plated film inhomogeneous, affects final product quality.Therefore, how substrate being continued to heating is uniformly in production, to be badly in need of the key problem of solution.
Summary of the invention
For above-mentioned problem, the present invention is proposed.
Content of the present invention is to provide a kind of structural scheme of substrate heating system of heated chamber, the especially film growth that sample can be hung to heating, has that Heating temperature is high, a homogeneous heating, feature that film forming homogeneous quality is high.
The heating system the present invention relates to, with reference to Figure of description 1, mainly comprises heater block (1-3), heat insulating member (4-6) and hangs hold assembly (7-9).
Wherein heater block described above comprises again: be heated sample (1), i.e. the substrate of film growth, as metallic copper or silicon nitride etc.; Hot-plate (2) adopts the materials such as resistant to elevated temperatures molybdenum; Heating thermal resistance (3) does not adopt conventional heater strip, and adopts tungsten sheet or molybdenum sheet, farthest to improve heating uniformity; Be heated sample (1), hot-plate (2), heating thermal resistance (3) three fits tightly.Heater block at least also will comprise three groups of wires, organize temperature control device more.
Above-mentioned heat insulating member comprises three layers of tubbiness thermal baffle (4-6), and wherein two-layer (4,5) adopt the high temperature materials such as molybdenum, and outermost layer (6) can adopt stainless material at utmost to reduce costs.
Suspension gripping element comprises: at least three group spring assemblies (7) support heated sample (1), use suspension supporting frame (8) that heated sample (1), hot-plate (2), heating thermal resistance (3) are hung to placement, hang laying method and can farthest discharge the deformation causing due to high-temperature expansion; Stationary installation (9) is for supporting whole heating cavity, and is fixed on flanged plate; Perhaps also need to can be used for heating cavity to be connected to the fixed support of peripheral equipment.
Main advantage of the present invention is:
1. utilize the design of heating system of the present invention, sample can be hung to heating;
2. the heater block the present invention relates to comprises again heated sample, hot-plate, heating thermal resistance, and three fits tightly, and by hanging laying method, can farthest discharge the deformation causing due to high-temperature expansion, is conducive to grow high-quality thin-film material;
3. the heating thermal resistance the present invention relates to does not adopt conventional heater strip, and adopts tungsten sheet or molybdenum sheet, farthest to improve heating uniformity;
4. the heat insulating member the present invention relates to comprises three layers of tubbiness thermal baffle, and successively the isolated extraneous thermal energy exchange with heating thermal resistance, makes heat energy reach maximum and utilize.
accompanying drawing explanation:
Fig. 1. the structural representation of the heating system the present invention relates to, wherein: heated sample (1), hot-plate (2), heating thermal resistance (3), three layers of thermal baffle (4-6), spring supporting device (7), suspension supporting frame (8), stationary installation (9).
Fig. 2. the floor map of the heating system the present invention relates to, wherein: heated sample (1), hot-plate and heating thermal resistance (2), three layers of thermal baffle (3-5).
Fig. 3. can use the CVD film growth principle schematic of heating unit of the present invention, wherein: heating system (1), heating system power supply (2), heating system suspension system (3), reactant gases mass flow measuring device (4).
embodiment:
Below in conjunction with Figure of description 3, describe the present invention in detail.
A CVD film growth system, comprises: heating system (1), heating system power supply (2), heating system suspension system (3), and reactant gases mass flow measuring device (4).
Heating system (1) comprises again heated sample, hot-plate, heating thermal resistance three parts.Wherein being heated sample is film growth substrate, such as Cu etc.; Hot-plate adopts the materials such as resistant to elevated temperatures molybdenum; Heating thermal resistance does not adopt conventional heater strip, and adopts tungsten sheet or molybdenum sheet, farthest to improve heating uniformity; Being heated sample, hot-plate, heating thermal resistance three fits tightly.Heater block at least also will comprise three groups of wires, organize temperature control device more.
Heating system (1) heats up by power supply (2), and hot-plate is warming up to the required temperature of film growth.
Heating system (1) is hung and is fixed on flanged plate by suspension system (3), and suspension system both can farthest discharge the deformation causing due to high-temperature expansion, can effectively reduce again outside vibrations system is impacted.
Use heating unit of the present invention substrate can be heated to 2000 ℃, and make substrate thermally equivalent, be difficult for producing deformation, can grow high quality, uniform thin-film material.
Claims (7)
- High purity material chamber for heat treated, be particularly useful for the structural scheme of the substrate heating system of film growth, have that Heating temperature is high, homogeneous heating, feature that film forming homogeneous quality is high, it is characterized in that: adopt sample is hung to the method for placing, can farthest discharge the deformation causing due to high-temperature expansion, be conducive to grow high-quality thin-film material.
- 2. heating system according to claim 1, is characterized in that: at least comprise heater block, heat insulating member and hang hold assembly.
- 3. heater block according to claim 2 further comprises again: be heated sample, hot-plate and heating thermal resistance; Being heated sample, hot-plate, heating thermal resistance three fits tightly; Heater block at least also comprises three groups of wires and organizes temperature control device more.
- 4. heat insulating member according to claim 2 further comprises again: at least three layers of tubbiness thermal baffle, wherein in two-layer employing high temperature material molybdenum, outermost layer can adopt stainless material at utmost to reduce costs.
- 5. suspension gripping element according to claim 2 further comprises again: at least three group spring assemblies support heated sample; One group of suspension supporting frame hangs heater block to place; One group of stationary installation is used for supporting whole heating cavity, and is fixed on flanged plate.
- 6. the sample that is heated according to claim 3, it is the substrate of film growth, it is characterized in that: any substrate that can be used for film growth, this type of substrate comprises: a kind of or two or more combination arbitrarily in copper (Cu), aluminium (Al), nickel (Ni), cobalt (Co), iron (Fe), platinum (Pt), gold (Au), chromium (Cr), magnesium (Mg), manganese (Mn), molybdenum (Mo), ruthenium (Rh), tantalum (Ta), titanium (Ti), rhodium (Rh), tungsten (W), silicon (Si), silicon carbide (SiC).
- 7. heating thermal resistance according to claim 3, is characterized in that: do not adopt conventional heater strip, and adopt tungsten sheet or molybdenum sheet, farthest to improve heating uniformity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310189320.1A CN104178750A (en) | 2013-05-21 | 2013-05-21 | Suspension-type heating system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310189320.1A CN104178750A (en) | 2013-05-21 | 2013-05-21 | Suspension-type heating system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104178750A true CN104178750A (en) | 2014-12-03 |
Family
ID=51960087
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310189320.1A Pending CN104178750A (en) | 2013-05-21 | 2013-05-21 | Suspension-type heating system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104178750A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN86105600A (en) * | 1985-07-25 | 1987-02-04 | 日电阿尼尔瓦株式会社 | Vacuum chemical reaction equipment |
| CN1793413A (en) * | 2005-12-19 | 2006-06-28 | 广东工业大学 | Process for colouring martensite stainless steel piston ring |
| CN101654769A (en) * | 2009-08-26 | 2010-02-24 | 杭州泛亚水暖器材有限公司 | Vacuum ion plating method |
| CN101849032A (en) * | 2007-11-05 | 2010-09-29 | 株式会社爱发科 | Vacuum-evaporation source, and organic EL element manufacturing apparatus |
-
2013
- 2013-05-21 CN CN201310189320.1A patent/CN104178750A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN86105600A (en) * | 1985-07-25 | 1987-02-04 | 日电阿尼尔瓦株式会社 | Vacuum chemical reaction equipment |
| CN1793413A (en) * | 2005-12-19 | 2006-06-28 | 广东工业大学 | Process for colouring martensite stainless steel piston ring |
| CN101849032A (en) * | 2007-11-05 | 2010-09-29 | 株式会社爱发科 | Vacuum-evaporation source, and organic EL element manufacturing apparatus |
| CN101654769A (en) * | 2009-08-26 | 2010-02-24 | 杭州泛亚水暖器材有限公司 | Vacuum ion plating method |
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| ASS | Succession or assignment of patent right |
Owner name: CHANGZHOU GUOCHENG NEW MATERIAL TECHNOLOGY CO., LT Free format text: FORMER OWNER: JIANGNAN GRAPHENE RESEARCH INSTITUTE Effective date: 20150908 |
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| TA01 | Transfer of patent application right |
Effective date of registration: 20150908 Address after: 213149 No. 6 Xiangyun Road, Wujin Economic Development Zone, Jiangsu, Changzhou Applicant after: Changzhou Tan Wei nanosecond science and technology company limited Applicant after: Changzhou into a new Mstar Technology Ltd Address before: 213149 No. 6 Xiangyun Road, Wujin Economic Development Zone, Jiangsu, Changzhou Applicant before: Changzhou Tan Wei nanosecond science and technology company limited Applicant before: JiangNan Graphene Research Institute |
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| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20160505 Address after: West Taihu science and Technology Industrial Park Road, Wujin District 213000 auspicious clouds in Jiangsu province Changzhou City No. 6 Applicant after: Changzhou into a new Mstar Technology Ltd Address before: 213149 No. 6 Xiangyun Road, Wujin Economic Development Zone, Jiangsu, Changzhou Applicant before: Changzhou Tan Wei nanosecond science and technology company limited Applicant before: Changzhou into a new Mstar Technology Ltd |
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| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20141203 |