ATE541242T1 - Positiv-lichtempfindliche harzzusammensetzung - Google Patents
Positiv-lichtempfindliche harzzusammensetzungInfo
- Publication number
- ATE541242T1 ATE541242T1 AT08703494T AT08703494T ATE541242T1 AT E541242 T1 ATE541242 T1 AT E541242T1 AT 08703494 T AT08703494 T AT 08703494T AT 08703494 T AT08703494 T AT 08703494T AT E541242 T1 ATE541242 T1 AT E541242T1
- Authority
- AT
- Austria
- Prior art keywords
- component
- resin composition
- group
- photosensitive resin
- positive photosensitive
- Prior art date
Links
- 239000011342 resin composition Substances 0.000 title abstract 4
- 150000001875 compounds Chemical class 0.000 abstract 2
- 125000000524 functional group Chemical group 0.000 abstract 2
- 125000000962 organic group Chemical group 0.000 abstract 2
- 239000002904 solvent Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical group C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 abstract 1
- 239000003513 alkali Substances 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 238000004132 cross linking Methods 0.000 abstract 1
- 125000003709 fluoroalkyl group Chemical group 0.000 abstract 1
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000003921 oil Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 238000001029 thermal curing Methods 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
- G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
- Polyurethanes Or Polyureas (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007011414 | 2007-01-22 | ||
PCT/JP2008/050644 WO2008090827A1 (ja) | 2007-01-22 | 2008-01-18 | ポジ型感光性樹脂組成物 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE541242T1 true ATE541242T1 (de) | 2012-01-15 |
Family
ID=39644404
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT08703494T ATE541242T1 (de) | 2007-01-22 | 2008-01-18 | Positiv-lichtempfindliche harzzusammensetzung |
Country Status (7)
Country | Link |
---|---|
US (1) | US8168371B2 (de) |
EP (1) | EP2109001B1 (de) |
JP (1) | JP5083568B2 (de) |
KR (1) | KR101401564B1 (de) |
AT (1) | ATE541242T1 (de) |
TW (1) | TWI403849B (de) |
WO (1) | WO2008090827A1 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8828651B2 (en) * | 2005-07-25 | 2014-09-09 | Nissan Chemical Industries, Ltd. | Positive-type photosensitive resin composition and cured film manufactured therefrom |
TWI505034B (zh) * | 2010-02-02 | 2015-10-21 | Nissan Chemical Ind Ltd | 正型感光性樹脂組成物及撥液性被膜 |
JP5635449B2 (ja) * | 2011-03-11 | 2014-12-03 | 富士フイルム株式会社 | 樹脂パターン及びその製造方法、mems構造体の製造方法、半導体素子の製造方法、並びに、メッキパターン製造方法 |
JP6064990B2 (ja) * | 2012-03-23 | 2017-01-25 | Jsr株式会社 | フォトレジスト組成物及びレジストパターン形成方法 |
KR101420527B1 (ko) * | 2012-11-30 | 2014-07-17 | 인하대학교 산학협력단 | 광이합체화 반응을 이용하는 포토레지스트 및 이를 이용한 유기발광 다이오드 표시장치 제조 방법 |
CN103902801B (zh) * | 2012-12-30 | 2017-12-22 | 上海联影医疗科技有限公司 | 肝灌注的仿真方法和肝灌注的定量测试方法 |
JP6492444B2 (ja) * | 2013-09-04 | 2019-04-03 | Jsr株式会社 | 感放射線性樹脂組成物、硬化膜、その形成方法、及び電子デバイス |
WO2015190294A1 (ja) * | 2014-06-09 | 2015-12-17 | 旭硝子株式会社 | 撥インク剤、ネガ型感光性樹脂組成物、隔壁および光学素子 |
TW201612250A (en) * | 2014-09-29 | 2016-04-01 | Fujifilm Corp | Photosensitive resin composition, manufacturing method for cured film, cured film, liquid crystal display device, organic electroluminescence display device and touch panel |
JP6826327B2 (ja) * | 2016-01-20 | 2021-02-03 | 日産化学株式会社 | ポジ型感光性樹脂組成物 |
WO2018079449A1 (ja) * | 2016-10-27 | 2018-05-03 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法 |
JP7045001B2 (ja) * | 2017-04-21 | 2022-03-31 | 日産化学株式会社 | 感光性樹脂組成物 |
WO2022009676A1 (ja) * | 2020-07-06 | 2022-01-13 | 昭和電工株式会社 | 感光性樹脂組成物及びその樹脂硬化膜 |
KR20230144044A (ko) * | 2021-02-08 | 2023-10-13 | 샌트랄 글래스 컴퍼니 리미티드 | 발액제, 경화성 조성물, 경화물, 격벽, 유기 전계 발광 소자, 함불소 도막의 제조 방법 및 함불소 도막 |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3817011A1 (de) | 1988-05-19 | 1989-11-30 | Basf Ag | Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefmustern |
JP2927014B2 (ja) | 1990-02-20 | 1999-07-28 | ジェイエスアール株式会社 | 感放射線性樹脂組成物 |
JP3518158B2 (ja) * | 1996-04-02 | 2004-04-12 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト材料 |
JPH10197715A (ja) | 1997-01-10 | 1998-07-31 | Canon Inc | 液晶用カラーフィルターの製造方法、該方法により製造された液晶用カラーフィルター及び液晶パネル |
JPH10206627A (ja) | 1997-01-17 | 1998-08-07 | Seiko Epson Corp | カラーフィルタ及びその製造方法 |
EP0878738B1 (de) * | 1997-05-12 | 2002-01-09 | Fuji Photo Film Co., Ltd. | Positiv arbeitende Resistzusammensetzung |
JP3911775B2 (ja) | 1997-07-30 | 2007-05-09 | セイコーエプソン株式会社 | 有機el素子の製造方法 |
CN100530758C (zh) | 1998-03-17 | 2009-08-19 | 精工爱普生株式会社 | 薄膜构图的衬底及其表面处理 |
JPH11326625A (ja) | 1998-05-13 | 1999-11-26 | Seiko Epson Corp | カラーフィルタ、カラー液晶ディスプレイ及びこれらの製造方法 |
TWI250379B (en) * | 1998-08-07 | 2006-03-01 | Az Electronic Materials Japan | Chemical amplified radiation-sensitive composition which contains onium salt and generator |
JP4138117B2 (ja) | 1998-12-21 | 2008-08-20 | セイコーエプソン株式会社 | カラーフィルタ基板の製造方法 |
JP4424630B2 (ja) | 1999-07-13 | 2010-03-03 | 三菱レイヨン株式会社 | 化学増幅型レジスト組成物およびレジストパターン形成方法 |
SG98433A1 (en) * | 1999-12-21 | 2003-09-19 | Ciba Sc Holding Ag | Iodonium salts as latent acid donors |
WO2003087941A1 (fr) * | 2002-04-18 | 2003-10-23 | Nissan Chemical Industries, Ltd. | Composition de resine positivement photosensible et procede de formation de motifs |
JP2004212678A (ja) * | 2002-12-27 | 2004-07-29 | Kyocera Chemical Corp | 感光性樹脂組成物及びポジ型パターン形成方法 |
WO2004079454A1 (ja) * | 2003-03-07 | 2004-09-16 | Asahi Glass Company Limited | 感光性樹脂組成物及びその塗膜硬化物 |
CN1816774B (zh) * | 2003-07-28 | 2010-08-04 | 日产化学工业株式会社 | 正型感光性树脂组合物 |
JP5177933B2 (ja) * | 2003-08-12 | 2013-04-10 | 東洋インキScホールディングス株式会社 | 隔壁用組成物、それを用いた画素形成用基板および画素の形成方法 |
JP4363161B2 (ja) | 2003-10-28 | 2009-11-11 | Jsr株式会社 | 感放射線性樹脂組成物、並びに層間絶縁膜およびマイクロレンズの形成方法 |
JP4543886B2 (ja) * | 2003-11-14 | 2010-09-15 | 旭硝子株式会社 | 画像表示素子の隔壁の形成方法 |
JP4131864B2 (ja) * | 2003-11-25 | 2008-08-13 | 東京応化工業株式会社 | 化学増幅型ポジ型感光性熱硬化性樹脂組成物、硬化物の形成方法、及び機能素子の製造方法 |
JP4415737B2 (ja) | 2004-04-08 | 2010-02-17 | 旭硝子株式会社 | 感光性樹脂組成物及びその塗膜硬化物 |
TWI424270B (zh) | 2004-05-26 | 2014-01-21 | Nissan Chemical Ind Ltd | 正型感光性樹脂組成物及所得層間絕緣膜以及微透鏡 |
CN1989145B (zh) * | 2004-05-28 | 2010-06-23 | 三亚普罗株式会社 | 新颖的氟代烷基氟磷酸鎓盐和过渡金属络合物盐 |
US8828651B2 (en) * | 2005-07-25 | 2014-09-09 | Nissan Chemical Industries, Ltd. | Positive-type photosensitive resin composition and cured film manufactured therefrom |
CN101374878B (zh) | 2006-01-25 | 2012-01-18 | 日产化学工业株式会社 | 正型感光性树脂组合物和由其得到的固化膜 |
CN101443705B (zh) | 2006-05-16 | 2012-05-30 | 日产化学工业株式会社 | 含有硅氧烷化合物的正型感光性树脂组合物 |
TW200813635A (en) | 2006-05-16 | 2008-03-16 | Nissan Chemical Ind Ltd | Positive type photosensitive resin composition and porous film obtained therefrom |
WO2007145249A1 (ja) | 2006-06-15 | 2007-12-21 | Nissan Chemical Industries, Ltd. | 環構造を持つ高分子化合物を含有するポジ型感光性樹脂組成物 |
JP5488779B2 (ja) | 2006-09-01 | 2014-05-14 | 日産化学工業株式会社 | 高平坦化膜形成用樹脂組成物 |
WO2008035672A1 (fr) | 2006-09-20 | 2008-03-27 | Nissan Chemical Industries, Ltd. | Procédé de fabrication d'un film durci transparent en utilisant une couche de résine photosensible positive pendant une demie exposition |
-
2008
- 2008-01-18 EP EP08703494A patent/EP2109001B1/de not_active Not-in-force
- 2008-01-18 AT AT08703494T patent/ATE541242T1/de active
- 2008-01-18 US US12/449,022 patent/US8168371B2/en not_active Expired - Fee Related
- 2008-01-18 KR KR1020097014687A patent/KR101401564B1/ko not_active Expired - Fee Related
- 2008-01-18 WO PCT/JP2008/050644 patent/WO2008090827A1/ja active Application Filing
- 2008-01-18 JP JP2008555039A patent/JP5083568B2/ja not_active Expired - Fee Related
- 2008-01-22 TW TW097102387A patent/TWI403849B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US20100028805A1 (en) | 2010-02-04 |
EP2109001A4 (de) | 2010-11-24 |
US8168371B2 (en) | 2012-05-01 |
WO2008090827A1 (ja) | 2008-07-31 |
JP5083568B2 (ja) | 2012-11-28 |
EP2109001B1 (de) | 2012-01-11 |
KR20090109538A (ko) | 2009-10-20 |
EP2109001A1 (de) | 2009-10-14 |
TW200903170A (en) | 2009-01-16 |
KR101401564B1 (ko) | 2014-06-03 |
JPWO2008090827A1 (ja) | 2010-05-20 |
TWI403849B (zh) | 2013-08-01 |
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