NL7707720A - Halfgeleiderlaser of -versterker. - Google Patents

Halfgeleiderlaser of -versterker.

Info

Publication number: NL7707720A
Authority: NL; Netherlands
Prior art keywords: amplifier; semiconductor laser; laser; semiconductor
Prior art date: 1977-07-12

Application number

NL7707720A

Other languages

English (en)

Original Assignee

Philips Nv

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1977-07-12

Filing date

1977-07-12

Publication date

1979-01-16

1977-07-12 Application filed by Philips Nv filed Critical Philips Nv

1977-07-12 Priority to NL7707720A priority Critical patent/NL7707720A/nl

1978-07-03 Priority to DE7878200074T priority patent/DE2860540D1/de

1978-07-03 Priority to EP78200074A priority patent/EP0000412B1/en

1978-07-05 Priority to CA306,840A priority patent/CA1124375A/en

1978-07-07 Priority to IT25470/78A priority patent/IT1096919B/it

1978-07-10 Priority to JP8390178A priority patent/JPS5419688A/ja

1979-01-16 Publication of NL7707720A publication Critical patent/NL7707720A/nl

1980-05-15 Priority to US06/150,270 priority patent/US4376307A/en

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
- H01S5/5009—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-insensitive

Landscapes

Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Electromagnetism (AREA)
Optics & Photonics (AREA)
Geometry (AREA)
Semiconductor Lasers (AREA)

NL7707720A 1977-07-12 1977-07-12 Halfgeleiderlaser of -versterker. NL7707720A (nl)

Priority Applications (7)

Application Number	Priority Date	Filing Date	Title
NL7707720A NL7707720A (nl)	1977-07-12	1977-07-12	Halfgeleiderlaser of -versterker.
DE7878200074T DE2860540D1 (en)	1977-07-12	1978-07-03	Semiconductor injection laser or intensifier
EP78200074A EP0000412B1 (en)	1977-07-12	1978-07-03	Semiconductor injection laser or intensifier
CA306,840A CA1124375A (en)	1977-07-12	1978-07-05	Semiconductor laser or intensifier
IT25470/78A IT1096919B (it)	1977-07-12	1978-07-07	Intensificatore o laser a semiconduttore
JP8390178A JPS5419688A (en)	1977-07-12	1978-07-10	Semiconductor
US06/150,270 US4376307A (en)	1977-07-12	1980-05-15	Semiconductor laser or intensifier

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
NL7707720A NL7707720A (nl)	1977-07-12	1977-07-12	Halfgeleiderlaser of -versterker.

Publications (1)

Publication Number	Publication Date
NL7707720A true NL7707720A (nl)	1979-01-16

Family

ID=19828859

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NL7707720A NL7707720A (nl)	1977-07-12	1977-07-12	Halfgeleiderlaser of -versterker.

Country Status (7)

Country	Link
US (1)	US4376307A (nl)
EP (1)	EP0000412B1 (nl)
JP (1)	JPS5419688A (nl)
CA (1)	CA1124375A (nl)
DE (1)	DE2860540D1 (nl)
IT (1)	IT1096919B (nl)
NL (1)	NL7707720A (nl)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5598884A (en) *	1978-12-30	1980-07-28	Fujitsu Ltd	Semiconductor light emitting device
JPS55108789A (en) *	1979-01-18	1980-08-21	Nec Corp	Semiconductor laser
JPS55123191A (en) *	1979-03-16	1980-09-22	Fujitsu Ltd	Semiconductor light emitting device
JPS5618484A (en) *	1979-07-24	1981-02-21	Nec Corp	Manufacture of semiconductor laser
JPS5627989A (en) *	1979-08-14	1981-03-18	Fujitsu Ltd	Semiconductor light emitting device
JPS5654083A (en) *	1979-10-05	1981-05-13	Nec Corp	Semiconductor laser apparatus
US4376946A (en) *	1980-11-28	1983-03-15	Bell Telephone Laboratories, Incorporated	Superluminescent LED with efficient coupling to optical waveguide
JPS5792885A (en) *	1980-12-01	1982-06-09	Sharp Corp	Semiconductor laser element
JPS57153489A (en) *	1981-03-17	1982-09-22	Sharp Corp	Manufacture of semiconductor laser element
JPS58216486A (ja) *	1982-06-10	1983-12-16	Kokusai Denshin Denwa Co Ltd <Kdd>	半導体レ−ザおよびその製造方法
JPS5956785A (ja) *	1982-09-24	1984-04-02	Sanyo Electric Co Ltd	半導体レ−ザ
JPS6021588A (ja) *	1983-07-16	1985-02-02	Univ Kyoto	磁気電気光効果光増幅器
JPS5994485A (ja) *	1983-10-24	1984-05-31	Hitachi Ltd	半導体レ−ザ−装置
GB2156585B (en) *	1984-03-16	1987-10-21	Hitachi Ltd	Light-emitting device electrode
USRE34378E (en) *	1984-03-16	1993-09-14	Hitachi, Ltd.	Light emitting device with improved electrode structure to minimize short circuiting
US4794346A (en) *	1984-11-21	1988-12-27	Bell Communications Research, Inc.	Broadband semiconductor optical amplifier structure
JPS62260120A (ja) *	1986-05-07	1987-11-12	Kokusai Denshin Denwa Co Ltd <Kdd>	半導体外部光変調器
US4772854A (en) *	1986-12-24	1988-09-20	Bell Communications Research, Inc.	All optical repeater
JPH0410705Y2 (nl) *	1987-06-22	1992-03-17
CA1292040C (en) *	1988-08-26	1991-11-12	Gadi Eisenstein	Semiconductor optical amplifier with shortened gain recovery time
US5019787A (en) *	1989-10-30	1991-05-28	David Sarnoff Research Center, Inc.	Optical amplifier
US5131001A (en) *	1990-12-21	1992-07-14	David Sarnoff Research Center, Inc.	Monolithic semiconductor light emitter and amplifier
US5337176A (en) *	1992-03-25	1994-08-09	U. S. Philips Corporation	Optical amplifier with improved linearity

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS51138393A (en) *	1975-05-26	1976-11-29	Fujitsu Ltd	Semiconductor light emission device
US3978428A (en) *	1975-06-23	1976-08-31	Xerox Corporation	Buried-heterostructure diode injection laser
JPS609355B2 (ja) *	1975-08-30	1985-03-09	富士通株式会社	半導体発光装置の製法
JPS5245296A (en) *	1975-10-07	1977-04-09	Nippon Telegr & Teleph Corp <Ntt>	Semiconductive phototransmission pass and semiconductor emission devic e used it
JPS5286093A (en) *	1976-01-12	1977-07-16	Hitachi Ltd	Striped semiconductor laser
US4099999A (en) *	1977-06-13	1978-07-11	Xerox Corporation	Method of making etched-striped substrate planar laser
GB2046983B (en) *	1979-01-18	1983-03-16	Nippon Electric Co	Semiconductor lasers

1977
- 1977-07-12 NL NL7707720A patent/NL7707720A/nl not_active Application Discontinuation
1978
- 1978-07-03 EP EP78200074A patent/EP0000412B1/en not_active Expired
- 1978-07-03 DE DE7878200074T patent/DE2860540D1/de not_active Expired
- 1978-07-05 CA CA306,840A patent/CA1124375A/en not_active Expired
- 1978-07-07 IT IT25470/78A patent/IT1096919B/it active
- 1978-07-10 JP JP8390178A patent/JPS5419688A/ja active Granted
1980
- 1980-05-15 US US06/150,270 patent/US4376307A/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
EP0000412A3 (en)	1979-02-07
EP0000412B1 (en)	1981-03-18
IT7825470A0 (it)	1978-07-07
DE2860540D1 (en)	1981-04-16
US4376307A (en)	1983-03-08
JPS5755309B2 (nl)	1982-11-24
IT1096919B (it)	1985-08-26
EP0000412A2 (en)	1979-01-24
CA1124375A (en)	1982-05-25
JPS5419688A (en)	1979-02-14

Publication	Publication Date	Title
NL7707720A (nl)	1979-01-16	Halfgeleiderlaser of -versterker.
NL181963C (nl)	1987-12-01	Halfgeleiderlaserinrichting.
NL185186C (nl)	1990-02-01	Halfgeleiderlaserelement.
NL175365C (nl)	1984-10-16	Vermogensversterker.
NO780520L (no)	1978-08-18	Forsterkersystem.
NL7807702A (nl)	1979-01-23	Interferometrische versterker.
NL7700969A (nl)	1978-08-02	Versterkerschakeling.
NL171760C (nl)	1983-05-02	Halfgeleiderlaser.
NL7711664A (nl)	1978-04-25	Halfgeleiderlaser.
NL184086C (nl)	1989-04-03	Laser.
NL7714512A (nl)	1978-07-04	Versterkerinrichting.
NL188974C (nl)	1992-11-16	Pulsversterker.
NL7808743A (nl)	1979-03-02	Versterker.
NL184715B (nl)	1989-05-01	Halfgeleiderlaserinrichting.
NL7800198A (nl)	1978-07-11	Versterkerinrichting.
NL187599C (nl)	1991-11-18	Verschilversterker.
NL192859B (nl)	1997-11-03	Operationele versterkerschakeling.
NL7702007A (nl)	1977-08-29	Direkt-gekoppelde vermogensversterker.
NL189636C (nl)	1993-06-01	Vermogensversterker.
NL7805949A (nl)	1979-02-06	Transistorversterker.
NO783145L (no)	1979-03-20	Bjelkebeslag.
NL7706405A (nl)	1977-12-23	Laser.
NL7710481A (nl)	1978-03-29	Ligger.
NL7811422A (nl)	1979-05-28	Gaslaser.
NL7809708A (nl)	1979-05-21	Laser.

Legal Events

Date	Code	Title	Description
1982-03-01	BV	The patent application has lapsed