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MX2015006833A - Elemento semiconductor de nitruro y metodo para la fabricacion del mismo. - Google Patents

Elemento semiconductor de nitruro y metodo para la fabricacion del mismo.

Info

Publication number
MX2015006833A
MX2015006833A MX2015006833A MX2015006833A MX2015006833A MX 2015006833 A MX2015006833 A MX 2015006833A MX 2015006833 A MX2015006833 A MX 2015006833A MX 2015006833 A MX2015006833 A MX 2015006833A MX 2015006833 A MX2015006833 A MX 2015006833A
Authority
MX
Mexico
Prior art keywords
sapphire substrate
semiconductor element
nitride
plan
extends
Prior art date
Application number
MX2015006833A
Other languages
English (en)
Other versions
MX364561B (es
Inventor
Tomohiro Shimooka
Masahiko Sano
Naoki Azuma
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Publication of MX2015006833A publication Critical patent/MX2015006833A/es
Publication of MX364561B publication Critical patent/MX364561B/es

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates

Landscapes

  • Led Devices (AREA)

Abstract

Un elemento semiconductor de nitruro incluye un substrato de zafiro que incluye: una superficie principal que se extiende en un plano-c del substrato de zafiro, y una pluralidad de salientes colocadas en la superficie principal, la pluralidad de salientes que incluyen al menos una saliente que tiene una forma alargada en una vista en planta; y una capa de semiconductor de nitruro colocada en la superficie principal del substrato de zafiro. La por lo menos una saliente tiene un borde exterior que se extiende en una dirección longitudinal de la forma alargada, el borde exterior que se extiende en una dirección orientada a un ángulo en un intervalo de -10° a + 10° con respecto a un plano-a del substrato de zafiro en la vista en planta.
MX2015006833A 2014-05-30 2015-05-29 Elemento semiconductor de nitruro y metodo para la fabricacion del mismo. MX364561B (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014111966 2014-05-30

Publications (2)

Publication Number Publication Date
MX2015006833A true MX2015006833A (es) 2016-01-12
MX364561B MX364561B (es) 2019-04-30

Family

ID=53274434

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2015006833A MX364561B (es) 2014-05-30 2015-05-29 Elemento semiconductor de nitruro y metodo para la fabricacion del mismo.

Country Status (7)

Country Link
EP (1) EP2950356B1 (es)
KR (1) KR102334161B1 (es)
CN (1) CN105280776B (es)
BR (1) BR102015012604B1 (es)
MX (1) MX364561B (es)
RU (1) RU2663684C2 (es)
TW (1) TWI640104B (es)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9773946B2 (en) 2015-02-18 2017-09-26 Nichia Corporation Light-emitting element comprising a partitioned sapphire substrate
JP6135751B2 (ja) * 2015-02-18 2017-05-31 日亜化学工業株式会社 発光素子
JP7305428B2 (ja) * 2018-06-05 2023-07-10 株式会社小糸製作所 半導体成長用基板、半導体素子、半導体発光素子および半導体素子製造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3556916B2 (ja) * 2000-09-18 2004-08-25 三菱電線工業株式会社 半導体基材の製造方法
JP3595277B2 (ja) * 2001-03-21 2004-12-02 三菱電線工業株式会社 ＧａＮ系半導体発光ダイオード
JP4055503B2 (ja) * 2001-07-24 2008-03-05 日亜化学工業株式会社 半導体発光素子
US7071494B2 (en) * 2002-12-11 2006-07-04 Lumileds Lighting U.S. Llc Light emitting device with enhanced optical scattering
JP4201079B2 (ja) * 2002-12-20 2008-12-24 昭和電工株式会社 発光素子、その製造方法およびｌｅｄランプ
DE102004002132A1 (de) * 2004-01-15 2005-08-11 Man Roland Druckmaschinen Ag Einrichtung zur Erzeugung einer Beschichtung von Druckprodukten einer Druckmaschine
WO2005018008A1 (ja) * 2003-08-19 2005-02-24 Nichia Corporation 半導体素子
CN101232067B (zh) * 2005-05-16 2013-05-15 索尼株式会社 发光二极管及其制造方法、集成发光二极管、以及显示器
JP4462249B2 (ja) * 2005-09-22 2010-05-12 ソニー株式会社 発光ダイオードの製造方法、集積型発光ダイオードの製造方法および窒化物系ｉｉｉ−ｖ族化合物半導体の成長方法
JP2008053385A (ja) 2006-08-23 2008-03-06 Mitsubishi Cable Ind Ltd 窒化物半導体発光ダイオード素子
CN101330002A (zh) * 2007-06-20 2008-12-24 中国科学院半导体研究所 用于氮化物外延生长的图形蓝宝石衬底的制作方法
JP2008091942A (ja) 2007-11-22 2008-04-17 Mitsubishi Cable Ind Ltd 窒化物半導体発光ダイオード
US8927348B2 (en) * 2008-05-14 2015-01-06 Toyoda Gosei Co., Ltd. Method of manufacturing group-III nitride semiconductor light-emitting device, and group-III nitride semiconductor light-emitting device, and lamp
KR101533296B1 (ko) * 2008-07-08 2015-07-02 삼성전자주식회사 패턴 형성 기판을 구비한 질화물 반도체 발광소자 및 그제조방법
RU2402837C1 (ru) * 2009-10-21 2010-10-27 Закрытое акционерное общество "ЭПИ-ЦЕНТР" Полупроводниковый светоизлучающий прибор с пористым буферным слоем
US8044422B2 (en) * 2009-11-25 2011-10-25 Huga Optotech Inc. Semiconductor light emitting devices with a substrate having a plurality of bumps
JP5273081B2 (ja) * 2010-03-30 2013-08-28 豊田合成株式会社 半導体発光素子
US8765509B2 (en) * 2010-09-30 2014-07-01 Toyoda Gosei Co., Ltd. Method for producing group III nitride semiconductor light-emitting device
JP2012114204A (ja) 2010-11-24 2012-06-14 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子およびその製造方法
JP5811009B2 (ja) * 2012-03-30 2015-11-11 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法及びｉｉｉ族窒化物半導体
RU134362U1 (ru) * 2012-06-26 2013-11-10 Закрытое акционерное общество "Светлана-Оптоэлектроника" Гетероструктура на профилированной подложке

Also Published As

Publication number Publication date
RU2663684C2 (ru) 2018-08-08
RU2015120619A (ru) 2016-12-20
RU2015120619A3 (es) 2018-07-05
EP2950356A1 (en) 2015-12-02
CN105280776A (zh) 2016-01-27
BR102015012604A2 (pt) 2015-12-01
EP2950356B1 (en) 2017-04-05
KR20150138092A (ko) 2015-12-09
CN105280776B (zh) 2019-01-01
TW201607075A (zh) 2016-02-16
BR102015012604B1 (pt) 2022-04-05
TWI640104B (zh) 2018-11-01
KR102334161B1 (ko) 2021-12-02
MX364561B (es) 2019-04-30

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