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Wang et al., 2021 - Google Patents

Solution-driven HfLaO x-based gate dielectrics for thin film transistors and unipolar inverters

Wang et al., 2021

Document ID
3296622227961057070
Author
Wang W
He G
Wang L
Xu X
Zhang Y
Publication year
Publication venue
IEEE Transactions on Electron Devices

External Links

Snippet

In this article, the preparation of HfLaO x gate dielectric thin films by the spin coating method is proposed. The in-depth physical properties of the as-prepared HfLaO x films were investigated as functions of annealing temperatures. Decided by the key performance …
Continue reading at ieeexplore.ieee.org (other versions)

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    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
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    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
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