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Yi et al., 2014 - Google Patents

Effects of gate dielectric thickness and semiconductor thickness on device performance of organic field-effect transistors based on pentacene

Yi et al., 2014

Document ID
2204786624015395155
Author
Yi R
Lou Z
Hu Y
Cui S
Teng F
Hou Y
Liu X
Publication year
Publication venue
Science China Technological Sciences

External Links

Snippet

In this paper, the pentacene-based organic field-effect transistors (OFETs) with poly (methyl methacrylate)(PMMA) as gate dielectrics were fabricated, and the effects of gate dielectric thickness and semiconductor thickness on the device performance were investigated. The …
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