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Radouan et al., 2021 - Google Patents

Investigation on electronic and thermoelectric properties of (P, As, Sb) doped ZrCoBi

Radouan et al., 2021

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Document ID
1832296632941517422
Author
Radouan D
Anissa B
Benaouda B
Publication year
Publication venue
East European Journal of Physics

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Since the last decade, the half-Heusler (HH) compounds have taken an important place in the field of the condensed matter physics research. The multiplicity of substitutions of transition elements at the crystallographic sites X, Y and (III-V) elements at the Z sites, gives …
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    • H—ELECTRICITY
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    • H01L35/12—Selection of the material for the legs of the junction
    • H01L35/14—Selection of the material for the legs of the junction using inorganic compositions
    • H01L35/18—Selection of the material for the legs of the junction using inorganic compositions comprising arsenic or antimony or bismuth, e.g. AIIIBV compounds
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    • H01L35/22—Selection of the material for the legs of the junction using inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen or germanium or silicon, e.g. superconductors
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    • H01L35/12—Selection of the material for the legs of the junction
    • H01L35/14—Selection of the material for the legs of the junction using inorganic compositions
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    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
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    • H01L29/16—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
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