[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Kang et al., 2009 - Google Patents

Restorable type conversion of carbon nanotube transistor using pyrolytically controlled antioxidizing photosynthesis coenzyme

Kang et al., 2009

View PDF
Document ID
18357664784620059773
Author
Kang B
Yu W
Kim K
Park H
Kim S
Park Y
Kim G
Shin H
Kim U
Lee E
Choi J
Lee Y
Publication year
Publication venue
Advanced Functional Materials

External Links

Snippet

Here, a pyrolytically controlled antioxidizing photosynthesis coenzyme, β‐Nicotinamide adenine dinucleotide, reduced dipotassium salt (NADH) for a stable n‐type dopant for carbon nanotube (CNT) transistors is proposed. A strong electron transfer from NADH …
Continue reading at www.academia.edu (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0032—Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
    • H01L51/0045—Carbon containing materials, e.g. carbon nanotubes, fullerenes
    • H01L51/0048—Carbon nanotubes
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/05—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
    • H01L51/0504—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
    • H01L51/0508—Field-effect devices, e.g. TFTs
    • H01L51/0512—Field-effect devices, e.g. TFTs insulated gate field effect transistors
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0032—Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
    • H01L51/005—Macromolecular systems with low molecular weight, e.g. cyanine dyes, coumarine dyes, tetrathiafulvalene
    • H01L51/0052—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/54—Material technologies
    • Y02E10/549—Material technologies organic PV cells

Similar Documents

Publication Publication Date Title
Kang et al. Restorable type conversion of carbon nanotube transistor using pyrolytically controlled antioxidizing photosynthesis coenzyme
Lee et al. Scalable complementary logic gates with chemically doped semiconducting carbon nanotube transistors
Burghard et al. Carbon‐based field‐effect transistors for nanoelectronics
Kim et al. Role of anions in the AuCl3-doping of carbon nanotubes
Si et al. Advances in high‐performance carbon‐nanotube thin‐film electronics
US8221715B2 (en) Carbon-nanotube n-doping material and methods of manufacture thereof
Li et al. Importance of diameter control on selective synthesis of semiconducting single-walled carbon nanotubes
Hong et al. Radiation hardness of the electrical properties of carbon nanotube network field effecttransistors under high-energy proton irradiation
CN100505264C (en) A CMOS circuit based on semiconductor nanomaterials and its preparation
Li et al. Air-stable n-type transistors based on assembled aligned carbon nanotube arrays and their application in complementary metal-oxide-semiconductor electronics
Kim et al. Design of a polymer–carbon nanohybrid junction by interface modeling for efficient printed transistors
Fujii et al. Performance enhancement of thin-film transistors by using high-purity semiconducting single-wall carbon nanotubes
Gong et al. Investigation on field emission properties of N-doped graphene-carbon nanotube composites
Li et al. Synthesis and electronic properties of ferrocene-filled double-walled carbon nanotubes
Huang et al. Ambipolarity suppression of carbon nanotube thin film transistors
Paul et al. Organic photovoltaic cells using MWCNTs
Li et al. Influence of Triton X-100 on the characteristics of carbon nanotube field-effecttransistors
Aikawa et al. Facile fabrication of all-SWNT field-effect transistors
Tang et al. High-performance carbon nanotube complementary logic with end-bonded contacts
Chu et al. Enhancement of organic field-effect transistor performance by incorporating functionalized double-walled carbon nanotubes
Hamadanian et al. Modification of conductive properties of (10, 0) zigzag single-walled carbon nanotubes (SWCNT) by alkali metals absorption
Kim et al. Carrier-type modulation of tungsten diselenide (WSe2) field-effect transistors (FETs) via benzyl viologen (BV) doping
Huang et al. Doping-free fabrication of n-type random network single-walled carbon nanotube field effect transistor with yttrium contacts
Zhang et al. The effects of contacts and ambipolar electrical transport in nitrogen doped multiwallcarbon nanotubes
Duan et al. Semiconducting single-walled carbon nanotubes as interfacial modification layers for organic-Si solar cells