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Sun et al., 2018 - Google Patents

Hybrid graphene/cadmium-free ZnSe/ZnS quantum dots phototransistors for UV detection

Sun et al., 2018

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Document ID
18299362701096727405
Author
Sun Y
Xie D
Sun M
Teng C
Qian L
Chen R
Xiang L
Ren T
Publication year
Publication venue
Scientific reports

External Links

Snippet

Graphene-based optoelectronic devices have attracted much attention due to their broadband photon responsivity and fast response time. However, the performance of such graphene-based photodetectors is greatly limited by weak light absorption and low …
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    • H01L51/0032—Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
    • H01L51/0045—Carbon containing materials, e.g. carbon nanotubes, fullerenes
    • H01L51/0048—Carbon nanotubes
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
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    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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