[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Ghosh et al., 2009 - Google Patents

Highly enhanced ultraviolet photoresponse property in Cu-doped and Cu–Li co-doped ZnO films

Ghosh et al., 2009

Document ID
17778427897997450519
Author
Ghosh T
Basak D
Publication year
Publication venue
Journal of physics D: applied Physics

External Links

Snippet

A highly enhanced ultraviolet (UV) photodetection property has been achieved in 0.1% Cu doped and 0.1% Cu–2% Li co-doped sol–gel ZnO thin films. The 0.1% Cu doped and 0.1% Cu–2% Li co-doped films show UV photosensitivity values (photo-to-dark current ratio) of …
Continue reading at iopscience.iop.org (other versions)

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/54—Material technologies
    • Y02E10/549—Material technologies organic PV cells
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0032—Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/54—Material technologies
    • Y02E10/543—Solar cells from Group II-VI materials
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2251/00—Indexing scheme relating to organic semiconductor devices covered by group H01L51/00
    • H01L2251/30—Materials
    • H01L2251/301—Inorganic materials
    • H01L2251/303—Oxides, e.g. metal oxides
    • H01L2251/305—Transparent conductive oxides [TCO]
    • H01L2251/308—Transparent conductive oxides [TCO] composed of indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/42—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for sensing infra-red radiation, light, electro-magnetic radiation of shorter wavelength or corpuscular radiation and adapted for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation using organic materials as the active part, or using a combination of organic materials with other material as the active part; Multistep processes for their manufacture
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

Similar Documents

Publication Publication Date Title
Wang et al. High transmittance β-Ga2O3 thin films deposited by magnetron sputtering and post-annealing for solar-blind ultraviolet photodetector
Zhang et al. High-quality perovskite MAPbI3 single crystals for broad-spectrum and rapid response integrate photodetector
Tong et al. Fully-printed, flexible cesium-doped triple cation perovskite photodetector
Song et al. Low-temperature-processed ZnO–SnO2 nanocomposite for efficient planar perovskite solar cells
Mamat et al. Influence of doping concentrations on the aluminum doped zinc oxide thin films properties for ultraviolet photoconductive sensor applications
Mridha et al. Aluminium doped ZnO films: electrical, optical and photoresponse studies
Khayatian et al. Effect of annealing process in tuning of defects in ZnO nanorods and their application in UV photodetectors
Young et al. High response of ultraviolet photodetector based on Al-doped ZnO nanosheet structures
Baltakesmez et al. Inverted planar perovskite solar cells based on Al doped ZnO substrate
Gu et al. Effects of sputtering pressure and oxygen partial pressure on amorphous Ga2O3 film-based solar-blind ultraviolet photodetectors
Hullavarad et al. Ultra violet sensors based on nanostructured ZnO spheres in network of nanowires: a novel approach
Zahedi et al. Ultraviolet photoresponse properties of ZnO: N/p-Si and ZnO/p-Si heterojunctions
Panda et al. Carrier recombination in Cu doped CdS thin films: photocurrent and optical studies
Liu et al. Pinecone-shaped ZnO nanostructures: Growth, optical and gas sensor properties.
Liu et al. Visible-blind photodetectors with Mg-doped ZnO nanorods
Zhou et al. Effects of thermal annealing on the performance of Al/ZnO nanorods/Pt structure ultraviolet photodetector
Shkir et al. Engineering the physical properties of CdS thin films through incorporation of Fe dopant for photodetector applications
Rajan et al. Fast response ultra-violet photodetectors based on sol gel derived Ga-doped ZnO
Ghosh et al. Highly enhanced ultraviolet photoresponse property in Cu-doped and Cu–Li co-doped ZnO films
Zhou et al. Fabrication and characterization of the red photodetector based on CsPbI3/n-Si heterojunction
Al-Ghamdi et al. Structural, electronic, and optoelectronic characteristics of GaClPc/n-Si heterojunction for photodiode device
Rajan et al. Thickness dependent ultraviolet photoconductivity studies on sol-gel derived zinc oxide (ZnO) films
Pan et al. Highly Stable and Sensitive Solar-Blind Photodetectors Based on CsCu 2 I 3 Perovskites
Verma et al. Benzo [ghi] perylene monoimide based photosensitive lamellar Cd-doped ZnO nanohybrids
Kim et al. Investigation of crystallized ZnSnO3 nanoparticles for ultraviolet photodetectors