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Pham et al., 2016 - Google Patents

Low energy BCl3 plasma doping of few-layer graphene

Pham et al., 2016

Document ID
15368709954288912719
Author
Pham V
Kim D
Kim K
Park J
Yang K
Lee S
Yeom G
Kim K
Publication year
Publication venue
Science of Advanced Materials

External Links

Snippet

In this paper, we use low energy BCl3 plasma for the doping of graphene, and investigate its effect on graphene sheet resistance. In particular, for few-layer graphene, we use a cyclic trap-doping technique to control the dopants between the graphene layers. By using the …
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Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B31/00Carbon; Compounds thereof
    • C01B31/02Preparation of carbon; Purification; After-treatment
    • C01B31/04Graphite, including modified graphite, e.g. graphitic oxides, intercalated graphite, expanded graphite or graphene
    • C01B31/0438Graphene
    • C01B31/0446Preparation
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/54Material technologies
    • Y02E10/549Material technologies organic PV cells
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B31/00Carbon; Compounds thereof
    • C01B31/02Preparation of carbon; Purification; After-treatment
    • C01B31/0206Nanosized carbon materials
    • C01B31/022Carbon nanotubes

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