Singer et al., 1994 - Google Patents
Self‐organizing growth of erbium arsenide quantum dots and wires in gallium arsenide by molecular beam epitaxySinger et al., 1994
- Document ID
- 12799317119426151038
- Author
- Singer K
- Rutter P
- Peaker A
- Wright A
- Publication year
- Publication venue
- Applied physics letters
External Links
Snippet
Gallium arsenide doped with erbium has been grown by molecular beam epitaxy. At growth temperatures in the range 540-605 “C, and with arsenic to gallium flux ratios of 2 and more, the erbium forms uniform crystalline microprecipitates of ErAs when the concentration …
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa 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[As]#[Ga] 0 title abstract description 25
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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