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Xie et al., 2019 - Google Patents

Phase transition, domain structure and electrical properties of Mn-doped 0.3 Pb (In1/2Nb1/2) O3-0.4 Pb (Mg1/3Nb2/3) O3-0.3 PbTiO3 crystals

Xie et al., 2019

Document ID
12487643002643891683
Author
Xie Q
Hu Y
Xue S
Ma J
Zhao X
Tang Y
Wang F
Chew K
Lin D
Luo H
Publication year
Publication venue
Materials Chemistry and Physics

External Links

Snippet

Abstract The 0.5 mol.% Mn-doped 0.3 Pb (In 1/2 Nb 1/2) O 3-0.4 Pb (Mg 1/3 Nb 2/3) O 3-0.3 PbTiO 3 (Mn-PIMNT) single crystal was grown by a modified Bridgman technology. A comprehensive study involving the electrical properties, as well as phase transitions and …
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    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L41/00—Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L41/16—Selection of materials
    • H01L41/18—Selection of materials for piezo-electric or electrostrictive devices, e.g. bulk piezo-electric crystals
    • H01L41/187—Ceramic compositions, i.e. synthetic inorganic polycrystalline compounds incl. epitaxial, quasi-crystalline materials
    • H01L41/1878—Bismuth based oxides
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    • H01L41/00—Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L41/16—Selection of materials
    • H01L41/18—Selection of materials for piezo-electric or electrostrictive devices, e.g. bulk piezo-electric crystals
    • H01L41/187—Ceramic compositions, i.e. synthetic inorganic polycrystalline compounds incl. epitaxial, quasi-crystalline materials
    • H01L41/1875—Lead based oxides
    • H01L41/1876—Lead zirconate titanate based
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    • H01L41/08—Piezo-electric or electrostrictive devices
    • H01L41/09—Piezo-electric or electrostrictive devices with electrical input and mechanical output, e.g. actuators, vibrators
    • H01L41/0926—Piezo-electric or electrostrictive devices with electrical input and mechanical output, e.g. actuators, vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
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    • H01L41/22—Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
    • H01L41/35—Forming piezo-electric or electrostrictive materials
    • H01L41/39—Inorganic materials
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    • H01L41/31—Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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