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Stjernberg et al., 1977 - Google Patents

The rate of chemical vapor deposition of TiC

Stjernberg et al., 1977

Document ID
11883435887121992995
Author
Stjernberg K
Gass H
Hintermann H
Publication year
Publication venue
Thin Solid Films

External Links

Snippet

The influence of various process parameters on the deposition of TiC is discussed. The experiments have shown that the deposition rate is (a) almost independent of the total pressure,(b) proportional to the concentration of CH 4 and (c) inversely proportional to the …
Continue reading at www.sciencedirect.com (other versions)

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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
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